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Heavy-hole band splitting observed in mobility spectrum of p-type InAs grown on GaAs substrate
Abstract: High quality berylium doped InAs layer grown by MBE on GaAs substrate has been examined via magnetotransport measurements and high resolution quantitative mobility spectrum analysis in the range from 5 to 300 K and up to 15 T magnetic field. The layer homogenity and dopant concentration has been proofed via HR-SIMS. The results shew four channel conductivity and essential splitting of the most pop… ▽ More
Submitted 2 August, 2019; v1 submitted 31 July, 2019; originally announced August 2019.
Comments: 13 pages, 7 figures
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arXiv:1204.0226 [pdf, ps, other]
New resonant cavity-enhanced absorber structures for mid-infrared detector application
Abstract: A new dielectric Fabry-Perot cavity was designed for a resonant enhancing optical absorption by a thin absorber layer embedded into the cavity. In this cavity, the front mirror is a subwavelength grating with $\sim 100$% retroreflection. For a HgCdTe absorber in a matching cavity of the new type, the design is shown to meet the combined challenges of increasing the absorbing efficiency of the enti… ▽ More
Submitted 1 April, 2012; originally announced April 2012.
Comments: 7 pages, 5 figures, Numerical Simulations of Optoelectronic Devices (NUSOD) 2011 Conference; Opt Quant Electron, 2011
Journal ref: Opt Quant Electron, Vol. 44, p. 95 (2012)