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Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure
Authors:
Roberto Fallica,
Benjamin Watts,
Benedikt Rösner,
Gioia Della Giustina,
Laura Brigo,
Giovanna Brusatin,
Yasin Ekinci
Abstract:
We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments we…
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We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments were conducted using a scanning transmission X-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (~ 290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that the such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remain and form undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for extreme ultraviolet lithography.
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Submitted 26 September, 2018;
originally announced September 2018.
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Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Authors:
Roberto Fallica,
Dimitrios Kazazis,
Robert Kirchner,
Anja Voigt,
Iacopo Mochi,
Helmut Schift,
Yasin Ekinci
Abstract:
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high et…
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Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone, polymer-based and non-chemically amplified resists. Two exposure techniques were used: electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. These resists were originally designed for EBL patterning, where high quality patterning at sub-100 nm resolution was previously demonstrated. In the scope of this work, we also aim to validate their extendibility to EUV for high resolution and large area patterning. To this purpose, the same EBL process conditions were employed at EUV. The figures of merit, i.e. dose to clear, dose to size, and resolution, were extracted and these results are discussed systematically. It was found that both materials are very fast at EUV (dose to clear lower than 12 mJ/cm2) and are capable of resolving dense lines/space arrays with a resolution of 25 nm half-pitch. The quality of patterns was also very good and the sidewall roughness was below 6 nm. Interestingly, the general-purpose process used for EBL can be extended straightforwardly to EUV lithography with comparable high quality and yield. Our findings open new possibilities for lithographers who wish to devise novel fabrication schemes exploiting EUV for fabrication of nanostructures by deep etch pattern transfer.
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Submitted 24 October, 2017;
originally announced October 2017.
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A comparative study of resists and lithographic tools using the Lumped Parameter Model
Authors:
Roberto Fallica,
Robert Kirchner,
Dominique Mailly,
Yasin Ekinci
Abstract:
A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are processed under the same conditions. The dose-to-clear and the lithographic contrast are determined experimentally and are used to compare the relative efficiency…
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A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are processed under the same conditions. The dose-to-clear and the lithographic contrast are determined experimentally and are used to compare the relative efficiency of each tool. The results are compared to previous studies and interpreted in the light of each tool-specific secondary electron yield. In addition, the patterning performance is studied by exposing dense line/spaces patterns and the relation between critical dimension and exposure dose is discussed. Finally, the Lumped Parameter Model is employed in order to quantitatively estimate the critical dimension of line/spaces, using each tool specific aerial image. Our implementation is then validated by fitting the model to the experimental data from interference lithography exposures, and extracting the resist contrast.
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Submitted 22 March, 2017;
originally announced March 2017.
