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Physics-informed tracking of qubit fluctuations
Authors:
Fabrizio Berritta,
Jan A. Krzywda,
Jacob Benestad,
Joost van der Heijden,
Federico Fedele,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Evert van Nieuwenburg,
Jeroen Danon,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Environmental fluctuations degrade the performance of solid-state qubits but can in principle be mitigated by real-time Hamiltonian estimation down to time scales set by the estimation efficiency. We implement a physics-informed and an adaptive Bayesian estimation strategy and apply them in real time to a semiconductor spin qubit. The physics-informed strategy propagates a probability distribution…
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Environmental fluctuations degrade the performance of solid-state qubits but can in principle be mitigated by real-time Hamiltonian estimation down to time scales set by the estimation efficiency. We implement a physics-informed and an adaptive Bayesian estimation strategy and apply them in real time to a semiconductor spin qubit. The physics-informed strategy propagates a probability distribution inside the quantum controller according to the Fokker-Planck equation, appropriate for describing the effects of nuclear spin diffusion in gallium-arsenide. Evaluating and narrowing the anticipated distribution by a predetermined qubit probe sequence enables improved dynamical tracking of the uncontrolled magnetic field gradient within the singlet-triplet qubit. The adaptive strategy replaces the probe sequence by a small number of qubit probe cycles, with each probe time conditioned on the previous measurement outcomes, thereby further increasing the estimation efficiency. The combined real-time estimation strategy efficiently tracks low-frequency nuclear spin fluctuations in solid-state qubits, and can be applied to other qubit platforms by tailoring the appropriate update equation to capture their distinct noise sources.
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Submitted 14 April, 2024;
originally announced April 2024.
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Interferometric Single-Shot Parity Measurement in an InAs-Al Hybrid Device
Authors:
Morteza Aghaee,
Alejandro Alcaraz Ramirez,
Zulfi Alam,
Rizwan Ali,
Mariusz Andrzejczuk,
Andrey Antipov,
Mikhail Astafev,
Amin Barzegar,
Bela Bauer,
Jonathan Becker,
Umesh Kumar Bhaskar,
Alex Bocharov,
Srini Boddapati,
David Bohn,
Jouri Bommer,
Leo Bourdet,
Arnaud Bousquet,
Samuel Boutin,
Lucas Casparis,
Benjamin James Chapman,
Sohail Chatoor,
Anna Wulff Christensen,
Cassandra Chua,
Patrick Codd,
William Cole
, et al. (137 additional authors not shown)
Abstract:
The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostruct…
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The fusion of non-Abelian anyons or topological defects is a fundamental operation in measurement-only topological quantum computation. In topological superconductors, this operation amounts to a determination of the shared fermion parity of Majorana zero modes. As a step towards this, we implement a single-shot interferometric measurement of fermion parity in indium arsenide-aluminum heterostructures with a gate-defined nanowire. The interferometer is formed by tunnel-coupling the proximitized nanowire to quantum dots. The nanowire causes a state-dependent shift of these quantum dots' quantum capacitance of up to 1 fF. Our quantum capacitance measurements show flux h/2e-periodic bimodality with a signal-to-noise ratio of 1 in 3.7 $μ$s at optimal flux values. From the time traces of the quantum capacitance measurements, we extract a dwell time in the two associated states that is longer than 1 ms at in-plane magnetic fields of approximately 2 T. These results are consistent with a measurement of the fermion parity encoded in a pair of Majorana zero modes that are separated by approximately 3 $μ$m and subjected to a low rate of poisoning by non-equilibrium quasiparticles. The large capacitance shift and long poisoning time enable a parity measurement error probability of 1%.
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Submitted 2 April, 2024; v1 submitted 17 January, 2024;
originally announced January 2024.
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Real-time two-axis control of a spin qubit
Authors:
Fabrizio Berritta,
Torbjørn Rasmussen,
Jan A. Krzywda,
Joost van der Heijden,
Federico Fedele,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Evert van Nieuwenburg,
Jeroen Danon,
Anasua Chatterjee,
Ferdinand Kuemmeth
Abstract:
Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize…
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Optimal control of qubits requires the ability to adapt continuously to their ever-changing environment. We demonstrate a real-time control protocol for a two-electron singlet-triplet qubit with two fluctuating Hamiltonian parameters. Our approach leverages single-shot readout classification and dynamic waveform generation, allowing full Hamiltonian estimation to dynamically stabilize and optimize the qubit performance. Powered by a field-programmable gate array (FPGA), the quantum control electronics estimates the Overhauser field gradient between the two electrons in real time, enabling controlled Overhauser-driven spin rotations and thus bypassing the need for micromagnets or nuclear polarization protocols. It also estimates the exchange interaction between the two electrons and adjusts their detuning, resulting in extended coherence of Hadamard rotations when correcting for fluctuations of both qubit axes. Our study emphasizes the critical role of feedback in enhancing the performance and stability of quantum devices affected by quasistatic noise. Feedback will play an essential role in improving performance in various qubit implementations that go beyond spin qubits, hel** realize the full potential of quantum devices for quantum technology applications.
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Submitted 26 February, 2024; v1 submitted 3 August, 2023;
originally announced August 2023.
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An rf Quantum Capacitance Parametric Amplifier
Authors:
A. El Kass,
C. T. **,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contra…
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We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype narrowband amplifier exhibits a gain greater than 20 dB up to an input power of - 66 dBm (1 dB compression), and a noise temperature TN of 1.3 K at 370 MHz. In contrast to superconducting amplifiers, the quantum capacitance parametric amplifier (QCPA) is operable at tesla-scale magnetic fields and temperatures ranging from milli kelvin to a few kelvin. These attributes, together with its low power (microwatt) operation when compared to conventional transistor amplifiers, suggest the QCPA may find utility in enabling on-chip integrated readout circuits for semiconductor qubits or in the context of space transceivers and radio astronomy instruments.
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Submitted 25 April, 2023;
originally announced April 2023.
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Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Authors:
Adbhut Gupta,
Gitansh Kataria,
Mani Chandra,
Siddhardh C. Morampudi,
Saeed Fallahi,
Geoff C. Gardner,
Michael J. Manfra,
Ravishankar Sundararaman,
Jean J. Heremans
Abstract:
Carrier transport in materials is often diffusive due to momentum-relaxing scattering with phonons and defects. Suppression of momentum-relaxing scattering can lead to the ballistic and hydrodynamic transport regimes, wherein complex non-Ohmic current flow patterns, including current vortices, can emerge. In the ballistic regime addressed here, transverse magnetic focusing is habitually understood…
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Carrier transport in materials is often diffusive due to momentum-relaxing scattering with phonons and defects. Suppression of momentum-relaxing scattering can lead to the ballistic and hydrodynamic transport regimes, wherein complex non-Ohmic current flow patterns, including current vortices, can emerge. In the ballistic regime addressed here, transverse magnetic focusing is habitually understood in a familiar single-particle picture of carriers injected from a source, following ballistic cyclotron orbits and reaching a detector. We report on a distinctive nonlocal magnetoresistance phenomenon exclusive to fermions, in an enclosed mesoscopic geometry wherein transverse focusing magnetoresistance peaks also occur at values of the cyclotron diameter that are incommensurate with the distance between the source and detector. In low-temperature experiments and simulations using GaAs/AlGaAs heterostructures with high electron mobility, we show that the peaks occur independently of the location of the detector, and only depend on the source-drain separation. We reproduce the experimental findings using simulations of ballistic transport in both semiclassical and quantum-coherent transport models. The periodicity of magnetic field at which the peaks occur is matched to the lithographically defined device scale. It is found that, unlike in transverse magnetic focusing, the magnetoresistance structure cannot be attributed to any set of ordered single-particle trajectories but instead requires accounting for the collective dynamics of the fermion distribution and of all particle trajectories. The magnetoresistance is further associated with current flow vorticity, a collective phenomenon.
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Submitted 31 January, 2023;
originally announced February 2023.
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InAs-Al Hybrid Devices Passing the Topological Gap Protocol
Authors:
Morteza Aghaee,
Arun Akkala,
Zulfi Alam,
Rizwan Ali,
Alejandro Alcaraz Ramirez,
Mariusz Andrzejczuk,
Andrey E Antipov,
Pavel Aseev,
Mikhail Astafev,
Bela Bauer,
Jonathan Becker,
Srini Boddapati,
Frenk Boekhout,
Jouri Bommer,
Esben Bork Hansen,
Tom Bosma,
Leo Bourdet,
Samuel Boutin,
Philippe Caroff,
Lucas Casparis,
Maja Cassidy,
Anna Wulf Christensen,
Noah Clay,
William S Cole,
Fabiano Corsetti
, et al. (102 additional authors not shown)
Abstract:
We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-loca…
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We present measurements and simulations of semiconductor-superconductor heterostructure devices that are consistent with the observation of topological superconductivity and Majorana zero modes. The devices are fabricated from high-mobility two-dimensional electron gases in which quasi-one-dimensional wires are defined by electrostatic gates. These devices enable measurements of local and non-local transport properties and have been optimized via extensive simulations to ensure robustness against non-uniformity and disorder. Our main result is that several devices, fabricated according to the design's engineering specifications, have passed the topological gap protocol defined in Pikulin et al. [arXiv:2103.12217]. This protocol is a stringent test composed of a sequence of three-terminal local and non-local transport measurements performed while varying the magnetic field, semiconductor electron density, and junction transparencies. Passing the protocol indicates a high probability of detection of a topological phase hosting Majorana zero modes as determined by large-scale disorder simulations. Our experimental results are consistent with a quantum phase transition into a topological superconducting phase that extends over several hundred millitesla in magnetic field and several millivolts in gate voltage, corresponding to approximately one hundred micro-electron-volts in Zeeman energy and chemical potential in the semiconducting wire. These regions feature a closing and re-opening of the bulk gap, with simultaneous zero-bias conductance peaks at both ends of the devices that withstand changes in the junction transparencies. The extracted maximum topological gaps in our devices are 20-60 $μ$eV. This demonstration is a prerequisite for experiments involving fusion and braiding of Majorana zero modes.
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Submitted 8 March, 2024; v1 submitted 6 July, 2022;
originally announced July 2022.
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A robust protocol for entropy measurement in mesoscopic circuits
Authors:
Tim Child,
Owen Sheekey,
Silvia Lüscher,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael Manfra,
Joshua Folk
Abstract:
Previous measurements utilizing Maxwell relations to measure change in entropy, $S$, demonstrated remarkable accuracy of measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the determination of entropy independent of measurement scaling, but a…
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Previous measurements utilizing Maxwell relations to measure change in entropy, $S$, demonstrated remarkable accuracy of measuring the spin-1/2 entropy of electrons in a weakly coupled quantum dot. However, these previous measurements relied upon prior knowledge of the charge transition lineshape. This had the benefit of making the determination of entropy independent of measurement scaling, but at the cost of limiting the applicability of the approach to relatively simple systems. To measure entropy of more exotic mesoscopic systems, a new analysis technique can be employed; however, doing so requires precise knowledge of the measurement scaling. Here, we give details on the necessary improvements made to the original experimental approach and highlight some of the common challenges (along with strategies to overcome them) that other groups may face when attempting this type of measurement.
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Submitted 27 October, 2021;
originally announced October 2021.
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Entropy measurement of a strongly coupled quantum dot
Authors:
Tim Child,
Owen Sheekey,
Silvia Lüscher,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael Manfra,
Andrew Mitchell,
Eran Sela,
Yaakov Kleeorin,
Yigal Meir,
Joshua Folk
Abstract:
The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with…
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The spin 1/2 entropy of electrons trapped in a quantum dot has previously been measured with great accuracy, but the protocol used for that measurement is valid only within a restrictive set of conditions. Here, we demonstrate a novel entropy measurement protocol that is universal for arbitrary mesoscopic circuits and apply this new approach to measure the entropy of a quantum dot hybridized with a reservoir, where Kondo correlations dominate spin physics. The experimental results match closely to numerical renormalization group (NRG) calculations for small and intermediate coupling. For the largest couplings investigated in this work, NRG predicts a suppression of spin entropy at the charge transition due to the formation of a Kondo singlet, but that suppression is not observed in the experiment.
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Submitted 13 April, 2022; v1 submitted 27 October, 2021;
originally announced October 2021.
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Parametric longitudinal coupling between a high-impedance superconducting resonator and a semiconductor quantum dot singlet-triplet spin qubit
Authors:
C. G. L. Bøttcher,
S. P. Harvey,
S. Fallahi,
G. C. Gardner,
M. J. Manfra,
U. Vool,
S. D. Bartlett,
A. Yacoby
Abstract:
Long-distance two-qubit coupling, mediated by a superconducting resonator, is a leading paradigm for performing entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a novel, controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impeda…
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Long-distance two-qubit coupling, mediated by a superconducting resonator, is a leading paradigm for performing entangling operations in a quantum computer based on spins in semiconducting materials. Here, we demonstrate a novel, controllable spin-photon coupling based on a longitudinal interaction between a spin qubit and a resonator. We show that coupling a singlet-triplet qubit to a high-impedance superconducting resonator can produce the desired longitudinal coupling when the qubit is driven near the resonator's frequency. We measure the energy splitting of the qubit as a function of the drive amplitude and frequency of a microwave signal applied near the resonator antinode, revealing pronounced effects close to the resonator frequency due to longitudinal coupling. By tuning the amplitude of the drive, we reach a regime with longitudinal coupling exceeding $1$ MHz. This demonstrates a new mechanism for qubit-resonator coupling, and represents a step** stone towards producing high-fidelity two-qubit gates mediated by a superconducting resonator.
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Submitted 21 July, 2021;
originally announced July 2021.
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Simultaneous Operations in a Two-Dimensional Array of Singlet-Triplet Qubits
Authors:
Federico Fedele,
Anasua Chatterjee,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Ferdinand Kuemmeth
Abstract:
In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin qubits exhibit long coherence times relative to their operation speed and single-qubit fidelities above error correction thresholds, multiqubit operations in two…
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In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin qubits exhibit long coherence times relative to their operation speed and single-qubit fidelities above error correction thresholds, multiqubit operations in two-dimensional arrays have been limited by fabrication, operation, and readout challenges. We present a two-by-two array of four singlet-triplet qubits in gallium arsenide and show simultaneous coherent operations and four-qubit measurements via exchange oscillations and frequency-multiplexed single-shot measurements. A larger multielectron quantum dot is fabricated in the center of the array as a tunable interqubit link, which we utilize to demonstrate coherent spin exchange with selected qubits. Our techniques are extensible to other materials, indicating a path towards quantum processors with gate-controlled spin qubits.
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Submitted 8 October, 2021; v1 submitted 4 May, 2021;
originally announced May 2021.
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Observation of flat bands in gated semiconductor artificial graphene
Authors:
Lingjie Du,
Ziyu Liu,
Shalom J. Wind,
Vittorio Pellegrini,
Ken W. West,
Saeed Fallahi,
Loren N. Pfeiffer,
Michael J. Manfra,
Aron Pinczuk
Abstract:
Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by back…
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Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands, and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability against electron density, indicating interplays between electron-electron interactions and honeycomb symmetry. Our results provide a new flexible platform to explore intriguing flat band physics.
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Submitted 25 March, 2021;
originally announced March 2021.
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Accurate characterization of tip-induced potential using electron interferometry
Authors:
A. Iordanescu,
S. Toussaint,
G. Bachelier,
S. Fallahi,
C. G. Gardner,
M. J. Manfra,
B. Hackens,
B. Brun
Abstract:
Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) ho…
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Using the tip of a scanning probe microscope as a local electrostatic gate gives access to real space information on electrostatics as well as charge transport at the nanoscale, provided that the tip-induced electrostatic potential is well known. Here, we focus on the accurate characterization of the tip potential, in a regime where the tip locally depletes a two-dimensional electron gas (2DEG) hosted in a semiconductor heterostructure. Scanning the tip in the vicinity of a quantum point contact defined in the 2DEG, we observe Fabry-Pérot interference fringes at low temperature in maps of the device conductance. We exploit the evolution of these fringes with the tip voltage to measure the change in depletion radius by electron interferometry. We find that a semi-classical finite-element self-consistent model taking into account the conical shape of the tip reaches a faithful correspondence with the experimental data.
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Submitted 24 September, 2020;
originally announced September 2020.
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Long-Distance Superexchange between Semiconductor Quantum-Dot Electron Spins
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Xuedong Hu,
John M. Nichol
Abstract:
Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance…
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Because of their long coherence times and potential for scalability, semiconductor quantum-dot spin qubits hold great promise for quantum information processing. However, maintaining high connectivity between quantum-dot spin qubits, which favor linear arrays with nearest neighbor coupling, presents a challenge for large-scale quantum computing. In this work, we present evidence for long-distance spin-chain-mediated superexchange coupling between electron spin qubits in semiconductor quantum dots. We weakly couple two electron spins to the ends of a two-site spin chain. Depending on the spin state of the chain, we observe oscillations between the distant end spins. We resolve the dynamics of both the end spins and the chain itself, and our measurements agree with simulations. Superexchange is a promising technique to create long-distance coupling between quantum-dot spin qubits.
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Submitted 11 January, 2021; v1 submitted 13 September, 2020;
originally announced September 2020.
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Adiabatic quantum state transfer in a semiconductor quantum-dot spin chain
Authors:
Yadav P. Kandel,
Haifeng Qiao,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconducto…
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Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are required for quantum error correction and efficient algorithms. Here, we present evidence of adiabatic quantum-state transfer in a chain of semiconductor quantum-dot electron spins. By adiabatically modifying exchange couplings, we transfer single- and two-spin states between distant electrons in less than 127 ns. We also show that this method can be cascaded for spin-state transfer in long spin chains. Based on simulations, we estimate that the probability to correctly transfer single-spin eigenstates and two-spin singlet states can exceed 0.95 for the experimental parameters studied here. In the future, state and process tomography will be required to verify the transfer of arbitrary single qubit states with a fidelity exceeding the classical bound. Adiabatic quantum-state transfer is robust to noise and pulse-timing errors. This method will be useful for initialization, state distribution, and readout in large spin-qubit arrays for gate-based quantum computing. It also opens up the possibility of universal adiabatic quantum computing in semiconductor quantum-dot spin qubits.
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Submitted 12 March, 2021; v1 submitted 7 July, 2020;
originally announced July 2020.
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Floquet-Enhanced Spin Swaps
Authors:
Haifeng Qiao,
Yadav P. Kandel,
John S. Van Dyke,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Edwin Barnes,
John M. Nichol
Abstract:
The transfer of information between quantum systems is essential for quantum communication and computation. In quantum computers, high connectivity between qubits can improve the efficiency of algorithms, assist in error correction, and enable high-fidelity readout. However, as with all quantum gates, operations to transfer information between qubits can suffer from errors associated with spurious…
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The transfer of information between quantum systems is essential for quantum communication and computation. In quantum computers, high connectivity between qubits can improve the efficiency of algorithms, assist in error correction, and enable high-fidelity readout. However, as with all quantum gates, operations to transfer information between qubits can suffer from errors associated with spurious interactions and disorder between qubits, among other things. Here, we harness interactions and disorder between qubits to improve a swap operation for spin eigenstates in semiconductor gate-defined quantum-dot spins. We use a system of four electron spins, which we configure as two exchange-coupled singlet-triplet qubits. Our approach, which relies on the physics underlying discrete time crystals, enhances the quality factor of spin-eigenstate swaps by up to an order of magnitude. Our results show how interactions and disorder in multi-qubit systems can stabilize non-trivial quantum operations and suggest potential uses for non-equilibrium quantum phenomena, like time crystals, in quantum information processing applications. Our results also confirm the long-predicted emergence of effective Ising interactions between exchange-coupled singlet-triplet qubits.
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Submitted 5 March, 2021; v1 submitted 18 June, 2020;
originally announced June 2020.
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Hydrodynamic and ballistic transport over large length scales in GaAs/AlGaAs
Authors:
Adbhut Gupta,
J. J. Heremans,
Gitansh Kataria,
Mani Chandra,
S. Fallahi,
G. C. Gardner,
M. J. Manfra
Abstract:
We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not…
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We study hydrodynamic and ballistic transport regimes through nonlocal resistance measurements and high-resolution kinetic simulations in a mesoscopic structure on a high-mobility two-dimensional electron system in a GaAs/AlGaAs heterostructure. We evince the existence of collective transport phenomena in both regimes and demonstrate that negative nonlocal resistances and current vortices are not exclusive to only the hydrodynamic regime. The combined experiments and simulations highlight the importance of device design, measurement schemes and one-to-one modeling of experimental devices to demarcate various transport regimes.
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Submitted 18 February, 2021; v1 submitted 28 February, 2020;
originally announced February 2020.
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Coherent multi-spin exchange coupling in a quantum-dot spin chain
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Kuangyin Deng,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Edwin Barnes,
John M. Nichol
Abstract:
Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange cou…
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Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.
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Submitted 8 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Conditional Teleportation of Quantum-Dot Spin States
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Sreenath K. Manikandan,
Andrew N. Jordan,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a c…
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Among the different platforms for quantum information processing, individual electron spins in semiconductor quantum dots stand out for their long coherence times and potential for scalable fabrication. The past years have witnessed substantial progress in the capabilities of spin qubits. However, coupling between distant electron spins, which is required for quantum error correction, presents a challenge, and this goal remains the focus of intense research. Quantum teleportation is a canonical method to transmit qubit states, but it has not been implemented in quantum-dot spin qubits. Here, we present evidence for quantum teleportation of electron spin qubits in semiconductor quantum dots. Although we have not performed quantum state tomography to definitively assess the teleportation fidelity, our data are consistent with conditional teleportation of spin eigenstates, entanglement swap**, and gate teleportation. Such evidence for all-matter spin-state teleportation underscores the capabilities of exchange-coupled spin qubits for quantum-information transfer.
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Submitted 16 June, 2020; v1 submitted 22 August, 2019;
originally announced August 2019.
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Precision measurement of electron-electron scattering in GaAs/AlGaAs using transverse magnetic focusing
Authors:
Adbhut Gupta,
Jean J. Heremans,
Gitansh Kataria,
Mani Chandra,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
Electron-electron (e-e) interactions assume a cardinal role in solid-state physics. Quantifying the e-e scattering length is hence critical. In this paper we show that the mesoscopic phenomenon of transverse magnetic focusing (TMF) in two-dimensional electron systems forms a precise and sensitive technique to measure this length scale. Conversely we quantitatively demonstrate that e-e scattering i…
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Electron-electron (e-e) interactions assume a cardinal role in solid-state physics. Quantifying the e-e scattering length is hence critical. In this paper we show that the mesoscopic phenomenon of transverse magnetic focusing (TMF) in two-dimensional electron systems forms a precise and sensitive technique to measure this length scale. Conversely we quantitatively demonstrate that e-e scattering is the predominant effect limiting TMF amplitudes in high-mobility materials. Using high-resolution kinetic simulations, we show that the TMF amplitude at a maximum decays exponentially as a function of the e-e scattering length, which leads to a ready approach to extract this length from the measured TMF amplitudes. The approach is applied to measure the temperature-dependent e-e scattering length in high-mobility GaAs/AlGaAs heterostructures. The simulations further reveal current vortices that accompany the cyclotron orbits - a collective phenomenon counterintuitive to the ballistic transport underlying a TMF setting.
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Submitted 5 July, 2022; v1 submitted 1 July, 2019;
originally announced July 2019.
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Direct Entropy Measurement in a Mesoscopic Quantum System
Authors:
Nikolaus Hartman,
Christian Olsen,
Silvia Lüscher,
Mohammad Samani,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael Manfra,
Joshua Folk
Abstract:
The entropy of an electronic system offers important insights into the nature of its quantum mechanical ground state. This is particularly valuable in cases where the state is difficult to identify by conventional experimental probes, such as conductance. Traditionally, entropy measurements are based on bulk properties, such as heat capacity, that are easily observed in macroscopic samples but are…
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The entropy of an electronic system offers important insights into the nature of its quantum mechanical ground state. This is particularly valuable in cases where the state is difficult to identify by conventional experimental probes, such as conductance. Traditionally, entropy measurements are based on bulk properties, such as heat capacity, that are easily observed in macroscopic samples but are unmeasurably small in systems that consist of only a few particles. In this work, we develop a mesoscopic circuit to directly measure the entropy of just a few electrons, and demonstrate its efficacy using the well understood spin statistics of the first, second, and third electron ground states in a GaAs quantum dot. The precision of this technique, quantifying the entropy of a single spin-$\frac{1}{2}$ to within 5\% of the expected value of $k_B \ln{2}$, shows its potential for probing more exotic systems. For example, entangled states or those with non-Abelian statistics could be clearly distinguished by their low-temperature entropy.
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Submitted 29 May, 2019;
originally announced May 2019.
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Coherent spin state transfer via Heisenberg exchange
Authors:
Yadav P. Kandel,
Haifeng Qiao,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
John M. Nichol
Abstract:
Quantum information science has the potential to revolutionize modern technology by providing resource-efficient approaches to computing, communication, and sensing. Although the physical qubits in a realistic quantum device will inevitably suffer errors, quantum error correction creates a path to fault-tolerant quantum information processing. Quantum error correction, however, requires that indiv…
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Quantum information science has the potential to revolutionize modern technology by providing resource-efficient approaches to computing, communication, and sensing. Although the physical qubits in a realistic quantum device will inevitably suffer errors, quantum error correction creates a path to fault-tolerant quantum information processing. Quantum error correction, however, requires that individual qubits can interact with many other qubits in the processor. Engineering this high connectivity can pose a challenge for platforms like electron spin qubits that naturally favor linear arrays. Here, we present an experimental demonstration of the transmission of electron spin states via Heisenberg exchange in an array of spin qubits. We transfer both single-spin and entangled states back and forth in a quadruple quantum-dot array without moving any electrons. Because it is scalable to large numbers of qubits, state transfer through Heisenberg exchange will be especially useful for multi-qubit gates and error-correction in spin-based quantum computers.
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Submitted 12 July, 2019; v1 submitted 10 April, 2019;
originally announced April 2019.
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Dispersive Gate Sensing the Quantum Capacitance of a Point Contact
Authors:
M. C. Jarratt,
A. Jouan,
A. C. Mahoney,
S. J. Waddy,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that t…
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The technique of dispersive gate sensing (DGS) uses a single electrode to readout a qubit by detecting the change in quantum capacitance due to single electron tunnelling. Here, we extend DGS from the detection of discrete tunnel events to the open regime, where many electrons are transported via partially- or fully-transmitting quantum modes. Comparing DGS with conventional transport shows that the technique can resolve the Van Hove singularities of a one-dimensional ballistic system, and also probe aspects of the potential landscape that are not easily accessed with dc transport. Beyond readout, these results suggest that gate-sensing can also be of use in tuning-up qubits or probing the charge configuration of open quantum devices in the regime where electrons are delocalized.
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Submitted 18 March, 2019;
originally announced March 2019.
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Observation of new plasmons in the fractional quantum Hall effect: interplay of topological and nematic orders
Authors:
Lingjie Du,
Ursula Wurstbauer,
Ken W. West,
Loren N. Pfeiffer,
Saeed Fallahi,
Geoff C. Gardner,
Michael J. Manfra,
Aron Pinczuk
Abstract:
Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent complex quantum ground states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime: intra-Landau-level plasmons in the second Landau level measured by resonant inelastic light scattering. The plasmons herald rotational-symmetry-breaking phases in tilted magnet…
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Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent complex quantum ground states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime: intra-Landau-level plasmons in the second Landau level measured by resonant inelastic light scattering. The plasmons herald rotational-symmetry-breaking phases in tilted magnetic fields and reveal long-range translational invariance in these phases. The fascinating dependence of plasmon features on filling factor provide new insights on interplays between topological quantum Hall order and nematic electronic liquid crystal phases. A marked intensity minimum in the plasmon spectrum at Landau level filling factor v = 5/2 strongly suggests that this paired state, which could support non-Abelian excitations, overwhelms competing nematic phases, unveiling the robustness of the 5/2 superfluid state for small tilt angles. At v = 7/3, a sharp and strong plasmon peak that links to emerging macroscopic coherence supports the proposed model of a FQH nematic state at this filling factor.
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Submitted 6 February, 2019;
originally announced February 2019.
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Aharonov-Bohm interference of fractional quantum Hall edge modes
Authors:
James Nakamura,
Saeed Fallahi,
Harshad Sahasrabudhe,
Rajib Rahman,
Shuang Liang,
Geoffrey C. Gardner,
Michael J. Manfra
Abstract:
We demonstrate operation of a small Fabry-Perot interferometer in which highly coherent Aharonov-Bohm oscillations are observed in the integer and fractional quantum Hall regimes. Using a novel heterostructure design, Coulomb effects are drastically suppressed. Coherency of edge mode interference is characterized by the energy scale for thermal dam**, ${T_0=206}mK$ at $ν=1$. Selective backscatte…
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We demonstrate operation of a small Fabry-Perot interferometer in which highly coherent Aharonov-Bohm oscillations are observed in the integer and fractional quantum Hall regimes. Using a novel heterostructure design, Coulomb effects are drastically suppressed. Coherency of edge mode interference is characterized by the energy scale for thermal dam**, ${T_0=206}mK$ at $ν=1$. Selective backscattering of edge modes originating in the ${N=0,1,2}$ Landau levels allows for independent determination of inner and outer edge mode velocities. Clear Aharonov-Bohm oscillations are observed at fractional filling factors $ν=2/3$ and $ν=1/3$. Our device architecture provides a platform for measurement of anyonic braiding statistics.
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Submitted 24 January, 2019;
originally announced January 2019.
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Fast spin exchange between two distant quantum dots
Authors:
Filip K. Malinowski,
Frederico Martins,
Thomas B. Smith,
Stephen D. Bartlett,
Andrew C. Doherty,
Peter D. Nissen,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
The Heisenberg exchange interaction between neighboring quantum dots allows precise voltage control over spin dynamics, due to the ability to precisely control the overlap of orbital wavefunctions by gate electrodes. This allows the study of fundamental electronic phenomena and finds applications in quantum information processing. Although spin-based quantum circuits based on short-range exchange…
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The Heisenberg exchange interaction between neighboring quantum dots allows precise voltage control over spin dynamics, due to the ability to precisely control the overlap of orbital wavefunctions by gate electrodes. This allows the study of fundamental electronic phenomena and finds applications in quantum information processing. Although spin-based quantum circuits based on short-range exchange interactions are possible, the development of scalable, longer-range coupling schemes constitutes a critical challenge within the spin-qubit community. Approaches based on capacitative coupling and cavity-mediated interactions effectively couple spin qubits to the charge degree of freedom, making them susceptible to electrically-induced decoherence. The alternative is to extend the range of the Heisenberg exchange interaction by means of a quantum mediator. Here, we show that a multielectron quantum dot with 50-100 electrons serves as an excellent mediator, preserving speed and coherence of the resulting spin-spin coupling while providing several functionalities that are of practical importance. These include speed (mediated two-qubit rates up to several gigahertz), distance (of order of a micrometer), voltage control, possibility of sweet spot operation (reducing susceptibility to charge noise), and reversal of the interaction sign (useful for dynamical decoupling from noise).
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Submitted 29 August, 2018;
originally announced August 2018.
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On SOCP/SDP formulation of the extended trust region subproblem
Authors:
S. Fallahi,
M. Salahi,
S. Ansary Karbasy
Abstract:
In this paper, we consider the extended trust region subproblem (\eTRS) which is the minimization of an indefinite quadratic function subject to the intersection of unit ball with a single linear inequality constraint. Using a variation of S-Lemma, we derive the necessary and sufficient optimality conditions for \eTRS. Then an SOCP/SDP formulation is introduced for the problem. Finally, several il…
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In this paper, we consider the extended trust region subproblem (\eTRS) which is the minimization of an indefinite quadratic function subject to the intersection of unit ball with a single linear inequality constraint. Using a variation of S-Lemma, we derive the necessary and sufficient optimality conditions for \eTRS. Then an SOCP/SDP formulation is introduced for the problem. Finally, several illustrative examples are provided.
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Submitted 20 July, 2018;
originally announced July 2018.
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Magnetically-defined topological edge plasmons in edgeless electron gas
Authors:
Dafei **,
Yang Xia,
Thomas Christensen,
Siqi Wang,
King Yan Fong,
Matthew Freeman,
Geoffrey C. Gardner,
Saeed Fallahi,
Qing Hu,
Yuan Wang,
Lloyd Engel,
Michael J. Manfra,
Nicolas X. Fang,
Xiang Zhang
Abstract:
Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimensional electron gas (2DEG) in a perpendicular magnetic field, embody a prototype of band topology for bosons. The time-reversal-breaking magnetic field opens a topological gap for bulk MPs up to the cyclotron frequency; topo…
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Topological materials bear gapped excitations in bulk yet protected gapless excitations at boundaries. Magnetoplasmons (MPs), as high-frequency density excitations of two-dimensional electron gas (2DEG) in a perpendicular magnetic field, embody a prototype of band topology for bosons. The time-reversal-breaking magnetic field opens a topological gap for bulk MPs up to the cyclotron frequency; topologically-protected edge magnetoplasmons (EMPs) bridge the bulk gap and propagate unidirectionally along system's boundaries. However, all the EMPs known to date adhere to physical edges where the electron density terminates abruptly. This restriction has made device application extremely difficult. Here we demonstrate a new class of topological edge plasmons -- domain-boundary magnetoplasmons (DBMPs), within a uniform edgeless 2DEG. Such DBMPs arise at the domain boundaries of an engineered sign-changing magnetic field and are protected by the difference of gap Chern numbers (+/-1) across the magnetic domains. They propagate unidirectionally along the domain boundaries and are immune to domain defects. Moreover, they exhibit wide tunability in the microwave frequency range under an applied magnetic field or gate voltage. Our study opens a new direction to realize high-speed reconfigurable topological devices.
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Submitted 7 March, 2018;
originally announced March 2018.
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Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients
Authors:
Lucas A. Orona,
John M. Nichol,
Shannon P. Harvey,
Charlotte G. L. Bøttcher,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process b…
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Visibility of singlet-triplet qubit readout is reduced to almost zero in large magnetic field gradients due to relaxation processes. Here we present a new readout technique that is robust against relaxation and allows for measurement when previously studied methods fail. This technique maps the qubit onto spin states that are immune to relaxation using a spin dependent electron tunneling process between the qubit and the lead. We probe this readout's performance as a function of magnetic field gradient and applied magnetic field, and optimize the pulse applied to the qubit through experiment and simulation.
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Submitted 22 February, 2018; v1 submitted 21 February, 2018;
originally announced February 2018.
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Possible nematic to smectic phase transition in a two-dimensional electron gas at half-filling
Authors:
Q. Qian,
J. Nakamura,
S. Fallahi,
G. C. Gardner,
M. J. Manfra
Abstract:
Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and transl…
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Liquid crystalline phases of matter permeate nature and technology, with examples ranging from cell membranes to liquid-crystal displays. Remarkably, electronic liquid crystal phases can exist in two-dimensional electron systems (2DES) at half Landau level filling in the quantum Hall regime. Theory has predicted the existence of a liquid crystal smectic phase that breaks both rotational and translational symmetries. However, previous experiments in 2DES are most consistent with an anisotropic nematic phase breaking only rotational symmetry. Here we report three transport phenomena at half-filling in ultra-low disorder 2DES: a non-monotonic temperature dependence of the sample resistance, dramatic onset of large time-dependent resistance fluctuations, and a sharp feature in the differential resistance suggestive of depinning. These data suggest that a sequence of symmetry-breaking phase transitions occurs as temperature is lowered: first a transition from an isotropic liquid to a nematic phase and finally to a liquid crystal smectic phase.
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Submitted 17 November, 2017;
originally announced November 2017.
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Spin of a multielectron quantum dot and its interaction with a neighboring electron
Authors:
Filip K. Malinowski,
Frederico Martins,
Thomas B. Smith,
Stephen D. Bartlett,
Andrew C. Doherty,
Peter D. Nissen,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
We investigate the spin of a multielectron GaAs quantum dot in a sequence of nine charge occupancies, by exchange coupling the multielectron dot to a neighboring two-electron double quantum dot. For all nine occupancies, we make use of a leakage spectroscopy technique to reconstruct the spectrum of spin states in the vicinity of the interdot charge transition between a single- and a multielectron…
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We investigate the spin of a multielectron GaAs quantum dot in a sequence of nine charge occupancies, by exchange coupling the multielectron dot to a neighboring two-electron double quantum dot. For all nine occupancies, we make use of a leakage spectroscopy technique to reconstruct the spectrum of spin states in the vicinity of the interdot charge transition between a single- and a multielectron quantum dot. In the same regime we also perform time-resolved measurements of coherent exchange oscillations between the single- and multielectron quantum dot. With these measurements, we identify distinct characteristics of the multielectron spin state, depending on whether the dot's occupancy is even or odd. For three out of four even occupancies we do not observe any exchange interaction with the single quantum dot, indicating a spin-0 ground state. For the one remaining even occupancy, we observe an exchange interaction that we associate with a spin-1 multielectron quantum dot ground state. For all five of the odd occupancies, we observe an exchange interaction associated with a spin-1/2 ground state. For three of these odd occupancies, we clearly demonstrate that the exchange interaction changes sign in the vicinity of the charge transition. For one of these, the exchange interaction is negative (i.e. triplet-preferring) beyond the interdot charge transition, consistent with the observed spin-1 for the next (even) occupancy. Our experimental results are interpreted through the use of a Hubbard model involving two orbitals of the multielectron quantum dot. Allowing for the spin correlation energy (i.e. including a term favoring Hund's rules) and different tunnel coupling to different orbitals, we qualitatively reproduce the measured exchange profiles for all occupancies.
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Submitted 27 October, 2017;
originally announced October 2017.
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A capacitance spectroscopy-based platform for realizing gate-defined electronic lattices
Authors:
T. Hensgens,
U. Mukhopadhyay,
P. Barthelemy,
S. Fallahi,
G. C. Gardner,
C. Reichl,
W. Wegscheider,
M. J. Manfra,
L. M. K. Vandersypen
Abstract:
Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control…
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Electrostatic confinement in semiconductors provides a flexible platform for the emulation of interacting electrons in a two-dimensional lattice, including in the presence of gauge fields. This combination offers the potential to realize a wide host of quantum phases. Here we present a measurement and fabrication scheme that builds on capacitance spectroscopy and allows for the independent control of density and periodic potential strength imposed on a two-dimensional electron gas. We characterize disorder levels and (in)homogeneity and develop and optimize different gating strategies at length scales where interactions are expected to be strong. A continuation of these ideas might see to fruition the emulation of interaction-driven Mott transitions or Hofstadter butterfly physics.
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Submitted 13 September, 2018; v1 submitted 26 September, 2017;
originally announced September 2017.
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Impact of silicon do** on low frequency charge noise and conductance drift in GaAs/AlGaAs nanostructures
Authors:
S. Fallahi,
J. R. Nakamura,
G. C. Gardner,
M. M. Yannell,
M. J. Manfra
Abstract:
We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short…
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We present measurements of low frequency charge noise and conductance drift in modulation doped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy in which the silicon do** density has been varied from $2.4\times 10^{18} cm^{-3}$ (critically doped) to $6.0\times 10^{18} cm^{-3}$ (overdoped). Quantum point contacts were used to detect charge fluctuations. A clear reduction of both short time scale telegraphic noise and long time scale conductance drift with decreased do** density was observed. These measurements indicate that the {\it neutral} do** region plays a significant role in charge noise and conductance drift.
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Submitted 18 September, 2017;
originally announced September 2017.
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Device Architecture for Coupling Spin Qubits Via an Intermediate Quantum State
Authors:
X. G. Croot,
S. J. Pauka,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on…
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We demonstrate a scalable device architecture that facilitates indirect exchange between singlet-triplet spin qubits, mediated by an intermediate quantum state. The device comprises five quantum dots, which can be independently loaded and unloaded via tunneling to adjacent reservoirs, avoiding charge latch-up common in linear dot arrays. In a step towards realizing two-qubit entanglement based on indirect exchange, the architecture permits precise control over tunnel rates between the singlet-triplet qubits and the intermediate state. We show that by separating qubits by 1 um, the residual capacitive coupling between them is reduced to 7 ueV.
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Submitted 20 July, 2017;
originally announced July 2017.
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Gate-Sensing Charge Pockets in the Semiconductor Qubit Environment
Authors:
X. G. Croot,
S. J. Pauka,
H. Lu,
A. C. Gossard,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and…
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We report the use of dispersive gate sensing (DGS) as a means of probing the charge environment of heterostructure-based qubit devices. The DGS technique, which detects small shifts in the quantum capacitance associated with single-electron tunnel events, is shown to be sensitive to pockets of charge in the potential-landscape likely under, and surrounding, the surface gates that define qubits and their readout sensors. Configuring a quantum point contact (QPC) as a localized emitter, we show how these charge pockets are activated by the relaxation of electrons tunneling through a barrier. The presence of charge pockets creates uncontrolled offsets in gate-bias and their thermal activation by on-chip tunnel currents suggests further sources of charge-noise that lead to decoherence in semiconductor qubits.
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Submitted 29 June, 2017;
originally announced June 2017.
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Negative spin exchange in a multielectron quantum dot
Authors:
Frederico Martins,
Filip K. Malinowski,
Peter D. Nissen,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation number. We observe that the multielectron groundstate transitions from spin-1/2-like to singlet-like to triplet-like as we increa…
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By operating a one-electron quantum dot (fabricated between a multielectron dot and a one-electron reference dot) as a spectroscopic probe, we study the spin properties of a gate-controlled multielectron GaAs quantum dot at the transition between odd and even occupation number. We observe that the multielectron groundstate transitions from spin-1/2-like to singlet-like to triplet-like as we increase the detuning towards the next higher charge state. The sign reversal in the inferred exchange energy persists at zero magnetic field, and the exchange strength is tunable by gate voltages and in-plane magnetic fields. Complementing spin leakage spectroscopy data, the inspection of coherent multielectron spin exchange oscillations provides further evidence for the sign reversal and, inferentially, for the importance of non-trivial multielectron spin exchange correlations.
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Submitted 3 June, 2017;
originally announced June 2017.
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Optimization of edge state velocity in the integer quantum Hall regime
Authors:
Harshad Sahasrabudhe,
Bozidar Novakovic,
James Nakamura,
Saeed Fallahi,
Michael Povolotskyi,
Gerhard Klimeck,
Rajib Rahman,
Michael J. Manfra
Abstract:
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here, we present a new simulation method for realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. We ca…
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Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point contact (QPCs) interferometers having a high edge state velocity is desirable. Here, we present a new simulation method for realistically modeling edge states near QPCs in the integer quantum Hall effect (IQHE) regime. We calculate the filling fraction in the center of the QPC and the velocity of the edge states, and predict structures with high edge state velocity. The 3D Schrödinger equation is split into 1D and 2D parts. Quasi-1D Schrödinger and Poisson equations are solved self-consistently in the IQHE regime to obtain the potential profile near the edges, and quantum transport is used to solve for the edge state wavefunctions. The velocity of edge states is found to be $\left< E \right> / B$, where $\left< E \right>$ is the expectation value of the electric field for the edge state. Anisotropically etched trench gated heterostructures with double sided delta do** have the highest edge state velocity among the structures considered.
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Submitted 28 November, 2017; v1 submitted 19 May, 2017;
originally announced May 2017.
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Quantum Lifetime in Ultra-High Quality GaAs Quantum Wells: Relationship to $Δ_{5/2}$ and Impact of Density Fluctuations
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Silvia Luscher,
Joshua A. Folk,
Gabor A. Csathy,
Michael J. Manfra
Abstract:
We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscilla…
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We consider quantum lifetime derived from low-field Shubnikov-de Haas oscillations as a metric of quality of the two-dimensional electron gas in GaAs quantum wells that expresses large excitation gaps in the fractional quantum Hall states of the N=1 Landau level. Analysis indicates two salient features: 1) small density inhomogeneities dramatically impact the amplitude of Shubnikov-de Haas oscillations such that the canonical method (cf. Coleridge, Phys. Rev. B \textbf{44}, 3793) for determination of quantum lifetime substantially underestimates $τ_q$ unless density inhomogeneity is explicitly considered; 2) $τ_q$ does not correlate well with quality as measured by $Δ_{5/2}$, the excitation gap of the fractional quantum Hall state at 5/2 filling.
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Submitted 20 April, 2017;
originally announced April 2017.
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High temperature resistivity measured at ν = 5/2 as a predictor of 2DEG quality in the N=1 Landau level
Authors:
Qi Qian,
James R. Nakamura,
Saeed Fallahi,
Geoffrey C. Gardner,
John D. Watson,
Michael J. Manfra
Abstract:
We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, th…
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We report a high temperature (T = 0.3K) indicator of the excitation gap $Δ_{5/2}$ at the filling factor $ ν=5/2$ fractional quantum Hall state in ultra-high quality AlGaAs/GaAs two-dimensional electron gases. As the lack of correlation between mobility $μ$ and $Δ_{5/2}$ has been well established in previous experiments, we define, analyze and discuss the utility of a different metric $ρ_{5/2}$, the resistivity at $ν=5/2$, as a high temperature predictor of $Δ_{5/2}$. This high-field resistivity reflects the scattering rate of composite fermions. Good correlation between $ρ_{5/2}$ and $Δ_{5/2}$ is observed in both a density tunable device and in a series of identically structured wafers with similar density but vastly different mobility. This correlation can be explained by the fact that both $ρ_{5/2}$ and $Δ_{5/2}$ are sensitive to long-range disorder from remote impurities, while $μ$ is sensitive primarily to disorder localized near the quantum well.
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Submitted 12 April, 2017;
originally announced April 2017.
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Symmetric Operation of the Resonant Exchange Qubit
Authors:
Filip K. Malinowski,
Frederico Martins,
Peter D. Nissen,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated RF pulses. At the resulting three-dimensional sweet spot the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this…
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We operate a resonant exchange qubit in a highly symmetric triple-dot configuration using IQ-modulated RF pulses. At the resulting three-dimensional sweet spot the qubit splitting is an order of magnitude less sensitive to all relevant control voltages, compared to the conventional operating point, but we observe no significant improvement in the quality of Rabi oscillations. For weak driving this is consistent with Overhauser field fluctuations modulating the qubit splitting. For strong driving we infer that effective voltage noise modulates the coupling strength between RF drive and the qubit, thereby quickening Rabi decay. Application of CPMG dynamical decoupling sequences consisting of up to n = 32 π pulses significantly prolongs qubit coherence, leading to marginally longer dephasing times in the symmetric configuration. This is consistent with dynamical decoupling from low frequency noise, but quantitatively cannot be explained by effective gate voltage noise and Overhauser field fluctuations alone. Our results inform recent strategies for the utilization of partial sweet spots in the operation and long-distance coupling of triple-dot qubits.
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Submitted 5 April, 2017;
originally announced April 2017.
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Spectrum of the Nuclear Environment for GaAs Spin Qubits
Authors:
Filip K. Malinowski,
Frederico Martins,
Łukasz Cywiński,
Mark S. Rudner,
Peter D. Nissen,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over six orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as $1/f^2$ for frequency $f \! \gtrsim \! 1$ Hz. Increasing the applied magnetic field from 0.1 T to 0.75 T supp…
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Using a singlet-triplet spin qubit as a sensitive spectrometer of the GaAs nuclear spin bath, we demonstrate that the spectrum of Overhauser noise agrees with a classical spin diffusion model over six orders of magnitude in frequency, from 1 mHz to 1 kHz, is flat below 10 mHz, and falls as $1/f^2$ for frequency $f \! \gtrsim \! 1$ Hz. Increasing the applied magnetic field from 0.1 T to 0.75 T suppresses electron-mediated spin diffusion, which decreases spectral content in the $1/f^2$ region and lowers the saturation frequency, each by an order of magnitude, consistent with a numerical model. Spectral content at megahertz frequencies is accessed using dynamical decoupling, which shows a crossover from the few-pulse regime ($\lesssim \! 16$ $π$-pulses), where transverse Overhauser fluctuations dominate dephasing, to the many-pulse regime ($\gtrsim \! 32$ $π$-pulses), where longitudinal Overhauser fluctuations with a $1/f$ spectrum dominate.
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Submitted 5 May, 2017; v1 submitted 7 January, 2017;
originally announced January 2017.
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Quantum capacitance anomalies of two-dimensional non-equilibrium states under microwave irradiation
Authors:
Jian Mi,
Jianli Wang,
Saeed Fallahi,
Geoffrey C. Gardner,
M. J. Manfra,
Chi Zhang
Abstract:
We report our direct study of the compressibility on ultrahigh mobility two-dimensional electron system ($μ_{e} \sim 1 \times 10^{7}$ cm$^{2}$/Vs) in GaAs/AlGaAs quantum wells under microwave (MW) irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave induced resistance oscillations (MIRO), however, the trend is opposite with respect to the c…
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We report our direct study of the compressibility on ultrahigh mobility two-dimensional electron system ($μ_{e} \sim 1 \times 10^{7}$ cm$^{2}$/Vs) in GaAs/AlGaAs quantum wells under microwave (MW) irradiation. The field penetration current results show that the quantum capacitance oscillates with microwave induced resistance oscillations (MIRO), however, the trend is opposite with respect to the compressibility for usual equilibrium states in previous theoretical explanations. The anomalous phenomena provide a platform for study on the non-equilibrium system under microwave, and point to the current domains and inhomogeneity induced by radiation. Moreover, the quantum capacitance indication for multi-photon process around $j = 1/2$ is detected under intensive microwave below 30 GHz.
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Submitted 15 December, 2016;
originally announced December 2016.
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High-fidelity entangling gate for double-quantum-dot spin qubits
Authors:
John M. Nichol,
Lucas A. Orona,
Shannon P. Harvey,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Amir Yacoby
Abstract:
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, develo** a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress deco…
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Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, develo** a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomized benchmarking and self-consistent quantum measurement, state, and process tomography, we measure single-qubit gate fidelities of approximately 99% and an entangling gate fidelity of 90%. In the future, operating double quantum dot spin qubits with large gradients in nuclear-spin-free materials, such as Si, should enable a two-qubit gate fidelity surpassing the threshold for fault-tolerant quantum information processing.
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Submitted 15 August, 2016;
originally announced August 2016.
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Notch filtering the nuclear environment of a spin qubit
Authors:
F. K. Malinowski,
F. Martins,
P. D. Nissen,
E. Barnes,
Ł. Cywiński,
M. S. Rudner,
S. Fallahi,
G. C. Gardner,
M. J. Manfra,
C. M. Marcus,
F. Kuemmeth
Abstract:
Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots, and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrol…
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Electron spins in gate-defined quantum dots provide a promising platform for quantum computation. In particular, spin-based quantum computing in gallium arsenide takes advantage of the high quality of semiconducting materials, reliability in fabricating arrays of quantum dots, and accurate qubit operations. However, the effective magnetic noise arising from the hyperfine interaction with uncontrolled nuclear spins in the host lattice constitutes a major source of decoherence. Low frequency nuclear noise, responsible for fast (10 ns) inhomogeneous dephasing, can be removed by echo techniques. High frequency nuclear noise, recently studied via echo revivals, occurs in narrow frequency bands related to differences in Larmor precession of the three isotopes $\mathbf{^{69}Ga}$, $\mathbf{^{71}Ga}$, and $\mathbf{^{75}As}$. Here we show that both low and high frequency nuclear noise can be filtered by appropriate dynamical decoupling sequences, resulting in a substantial enhancement of spin qubit coherence times. Using nuclear notch filtering, we demonstrate a spin coherence time ($\mathbf{T_{2}}$) of 0.87 ms, five orders of magnitude longer than typical exchange gate times, and exceeding the longest coherence times reported to date in Si/SiGe gate-defined quantum dots.
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Submitted 18 January, 2017; v1 submitted 25 January, 2016;
originally announced January 2016.
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Modified MBE hardware and techniques and role of gallium purity for attainment of two dimensional electron gas mobility >35 x10^6 cm^2/Vs in AlGaAs/GaAs quantum wells grown by MBE
Authors:
Geoffrey C. Gardner,
Saeed Fallahi,
John D. Watson,
Michael J. Manfra
Abstract:
We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE…
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We provide evidence that gallium purity is the primary impediment to attainment of ultra-high mobility in a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures grown by molecular beam epitaxy (MBE). The purity of gallium can be enhanced dramatically by in-situ high temperature outgassing within an operating MBE. Based on analysis of data from an initial growth campaign in a new MBE system and modifications employed for a 2nd growth campaign, we have produced 2DEGs with low temperature mobility in excess of 35x10^6cm2/Vs at density n=3.0x10^11/cm2 and mobility 18x10^6cm2/Vs at n=1.1x1011/cm2. Our 2nd campaign data indicate that gallium purity remains the factor currently limiting mobility <40x10^6cm2/Vs. We describe strategies to overcome this limitation.
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Submitted 25 February, 2016; v1 submitted 20 January, 2016;
originally announced January 2016.
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Noise suppression using symmetric exchange gates in spin qubits
Authors:
Frederico Martins,
Filip K. Malinowski,
Peter D. Nissen,
Edwin Barnes,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Charles M. Marcus,
Ferdinand Kuemmeth
Abstract:
We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintainin…
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We demonstrate a substantial improvement in the spin-exchange gate using symmetric control instead of conventional detuning in GaAs spin qubits, up to a factor-of-six increase in the quality factor of the gate. For symmetric operation, nanosecond voltage pulses are applied to the barrier that controls the interdot potential between quantum dots, modulating the exchange interaction while maintaining symmetry between the dots. Excellent agreement is found with a model that separately includes electrical and nuclear noise sources for both detuning and symmetric gating schemes. Unlike exchange control via detuning, the decoherence of symmetric exchange rotations is dominated by rotation-axis fluctuations due to nuclear field noise rather than direct exchange noise.
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Submitted 15 February, 2016; v1 submitted 23 November, 2015;
originally announced November 2015.
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Cryogenic Control Architecture for Large-Scale Quantum Computing
Authors:
J. M. Hornibrook,
J. I. Colless,
I. D. Conway Lamb,
S. J. Pauka,
H. Lu,
A. C. Gossard,
J. D. Watson,
G. C. Gardner,
S. Fallahi,
M. J. Manfra,
D. J. Reilly
Abstract:
Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experim…
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Solid-state qubits have recently advanced to the level that enables them, in-principle, to be scaled-up into fault-tolerant quantum computers. As these physical qubits continue to advance, meeting the challenge of realising a quantum machine will also require the engineering of new classical hardware and control architectures with complexity far beyond the systems used in today's few-qubit experiments. Here, we report a micro-architecture for controlling and reading out qubits during the execution of a quantum algorithm such as an error correcting code. We demonstrate the basic principles of this architecture in a configuration that distributes components of the control system across different temperature stages of a dilution refrigerator, as determined by the available cooling power. The combined setup includes a cryogenic field-programmable gate array (FPGA) controlling a switching matrix at 20 millikelvin which, in turn, manipulates a semiconductor qubit.
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Submitted 8 September, 2014;
originally announced September 2014.
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Field-effect-induced two-dimensional electron gas utilizing modulation do** for improved ohmic contacts
Authors:
Sumit Mondal,
Geoffrey C. Gardner,
John D. Watson,
Saeed Fallahi,
Amir Yacoby,
Michael J. Manfra
Abstract:
Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel…
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Modulation-doped AlGaAs/GaAs heterostructures are utilized extensively in the study of quantum transport in nanostructures, but charge fluctuations associated with remote ionized dopants often produce deleterious effects. Electric field-induced carrier systems offer an attractive alternative if certain challenges can be overcome. We demonstrate a field-effect transistor in which the active channel is locally devoid of modulation-do**, but silicon dopant atoms are retained in the ohmic contact region to facilitate reliable low-resistance contacts. A high quality two-dimensional electron gas is induced by a field-effect and is tunable over a wide range of density. Device design, fabrication, and low temperature (T= 0.3K) transport data are reported.
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Submitted 6 May, 2014;
originally announced May 2014.