Showing 1–28 of 28 results for author: Falko, V

In-plane staging in lithium-ion intercalation of bilayer graphene

Authors: Thomas Astles, James G. McHugh, Rui Zhang, Qian Guo, Madeleine Howe, Zefei Wu, Kornelia Indykiewicz, Alex Summerfield, Zachary A. H. Goodwin, Sergey Slizovskiy, Daniil Domaretskiy, Andre K. Geim, Vladimir Falko, Irina V. Grigorieva

Abstract: The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene. Unexpecte… ▽ More The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene. Unexpectedly, we find four distinct intercalation stages that correspond to well-defined Li-ion densities. We refer to these stages as 'in-plane', with no in-plane analogues in bulk graphite. The fully intercalated bilayers represent a stoichiometric compound C14LiC14 with a Li density of 2.7x10^{14} cm^{-2}, notably lower than fully intercalated graphite. Combining the experimental findings and DFT calculations, we show that the critical step in bilayer intercalation is a transition from AB to AA stacking which occurs at a density of 0.9x10^{14} cm^{-2}. Our findings reveal the mechanism and limits for electrochemical intercalation of bilayer graphene and suggest possible avenues for increasing the Li storage capacity. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Comments: 30 pages, 17 figures

Tunnel junctions based on interfacial 2D ferroelectrics

Authors: Yunze Gao, Astrid Weston, Vladimir Enaldiev, Eli Castanon, Wendong Wang, James E. Nunn, Amy Carl, Hugo De Latour, Xiao Li, Alex Summerfield, Andrey Kretinin, Nicholas Clark, Neil Wilson, Vladimir I. Falko, Roman Gorbachev

Abstract: Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switc… ▽ More Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain map** and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity. △ Less

Submitted 14 March, 2024; originally announced March 2024.

Comments: 3 figures

Valley-hybridized gate-tunable 1D exciton confinement in MoSe2

Authors: Maximilian Heithoff, Álvaro Moreno, Iacopo Torre, Matthew S. G. Feuer, Carola M. Purser, Gian Marcello Andolina, Giuseppe Calajo, Kenji Watanabe, Takashi Taniguchi, Dhiren Kara, Patrick Hays, Sefaattin Tongay, Vladimir Falko, Darrick Chang, Mete Atatüre, Antoine Reserbat-Plantey, Frank Koppens

Abstract: Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton interaction regimes, enabling exciton-based logic operations, exploring exotic quantum phases of matter, facilitating deterministic positioning and tuning of quant… ▽ More Controlling excitons at the nanoscale in semiconductor materials represents a formidable challenge in the fields of quantum photonics and optoelectronics. Achieving this control holds great potential for unlocking strong exciton-exciton interaction regimes, enabling exciton-based logic operations, exploring exotic quantum phases of matter, facilitating deterministic positioning and tuning of quantum emitters, and designing advanced optoelectronic devices. Monolayers of transition metal dichalcogenides (TMDs) offer inherent two-dimensional confinement and possess significant binding energies, making them particularly promising candidates for achieving electric-field-based confinement of excitons without dissociation. While previous exciton engineering strategies have predominantly focused on local strain gradients, the recent emergence of electrically confined states in TMDs has paved the way for novel approaches. Exploiting the valley degree of freedom associated with these confined states further broadens the prospects for exciton engineering. Here, we show electric control of light polarization emitted from one-dimensional (1D) quantum confined states in MoSe2. By employing non-uniform in-plane electric fields, we demonstrate the in-situ tuning of the trap** potential and reveal how gate-tunable valley-hybridization gives rise to linearly polarized emission from these localized states. Remarkably, the polarization of the localized states can be entirely engineered through either the spatial geometry of the 1D confinement potential or the application of an out-of-plane magnetic field. △ Less

Submitted 15 November, 2023; v1 submitted 9 November, 2023; originally announced November 2023.

Spontaneous Electric Polarization in Graphene Polytypes

Authors: Simon Salleh Atri, Wei Cao, Bar Alon, Nirmal Roy, Maayan Vizner Stern, Vladimir Falko, Moshe Goldstein, Leeor Kronik, Michael Urbakh, Oded Hod, Moshe Ben Shalom

Abstract: A crystalline solid is a periodic sequence of identical cells, each containing one or more atoms. If the constituting unit cell is not centrosymmetric, charge may distribute unevenly between the atoms, resulting in internal electric polarization. This effect serves as the basis for numerous ferroelectric, piezoelectric, and pyroelectric phenomena. In nearly all polar materials, including multilaye… ▽ More A crystalline solid is a periodic sequence of identical cells, each containing one or more atoms. If the constituting unit cell is not centrosymmetric, charge may distribute unevenly between the atoms, resulting in internal electric polarization. This effect serves as the basis for numerous ferroelectric, piezoelectric, and pyroelectric phenomena. In nearly all polar materials, including multilayered van der Waals stacks that were recently found to exhibit interfacial polarization, inversion symmetry is broken by having two or more atomic species within the unit cell. Here, we show that even elemental crystals, consisting of one type of atom, and composed of non-polar centrosymmetric layers, exhibit electric polarization if arranged in an appropriate three-dimensional architecture. This concept is demonstrated here for inversion and mirror asymmetric mixed-stacking tetra-layer polytypes of non-polar graphene sheets. Furthermore, we find that the room temperature out-of-plane electric polarization increases with external electrostatic do**, rather than decreases owing to screening. Using first-principles calculations, as well as tight-binding modeling, we unveil the origin of polytype-induced polarization and its dependence on do**. Extension of this idea to graphene multilayers suggests that solely by lateral shifts of constituent monolayers one can obtain multiple meta-stable interlayer stacking sequences that may allow for even larger electrical polarization. △ Less

Submitted 18 May, 2023; originally announced May 2023.

Spectroscopic signatures of tetralayer graphene polytypes

Authors: Andrew McEllistrim, Aitor Garcia-Ruiz, Zachary A. H. Goodwin, Vladimir I. Fal`ko

Abstract: Tetralayer graphene has recently become a new addition to the family of few-layer graphene with versatile electronic properties. This material can be realised in three distinctive stacking configurations, for which we determine spectroscopic signatures in angle-resolved photoemission spectroscopy (ARPES), dynamical optical conductivity, and Raman spectra of inter-band excitations. The reported lib… ▽ More Tetralayer graphene has recently become a new addition to the family of few-layer graphene with versatile electronic properties. This material can be realised in three distinctive stacking configurations, for which we determine spectroscopic signatures in angle-resolved photoemission spectroscopy (ARPES), dynamical optical conductivity, and Raman spectra of inter-band excitations. The reported library of spectral features of tetralayer graphenes can be used for the non-invasive identification of the stacking order realised in a particular film. △ Less

Submitted 14 February, 2023; originally announced February 2023.

Comments: Pages 11, figures 7

Giant magnetoresistance of Dirac plasma in high-mobility graphene

Authors: Na Xin, James Lourembam, P. Kumaravadivel, A. E. Kazantsev, Zefei Wu, Ciaran Mullan, Julien Barrier, Alexandra A. Geim, I. V. Grigorieva, A. Mishchenko, A. Principi, V. I. Falko, L. A. Ponomarenko, A. K. Geim, Alexey I. Berdyugin

Abstract: The most recognizable feature of graphene's electronic spectrum is its Dirac point around which interesting phenomena tend to cluster. At low temperatures, the intrinsic behavior in this regime is often obscured by charge inhomogeneity but thermal excitations can overcome the disorder at elevated temperatures and create electron-hole plasma of Dirac fermions. The Dirac plasma has been found to exh… ▽ More The most recognizable feature of graphene's electronic spectrum is its Dirac point around which interesting phenomena tend to cluster. At low temperatures, the intrinsic behavior in this regime is often obscured by charge inhomogeneity but thermal excitations can overcome the disorder at elevated temperatures and create electron-hole plasma of Dirac fermions. The Dirac plasma has been found to exhibit unusual properties including quantum critical scattering and hydrodynamic flow. However, little is known about the plasma's behavior in magnetic fields. Here we report magnetotransport in this quantum-critical regime. In low fields, the plasma exhibits giant parabolic magnetoresistivity reaching >100% in 0.1 T even at room temperature. This is orders of magnitude higher than magnetoresistivity found in any other system at such temperatures. We show that this behavior is unique to monolayer graphene, being underpinned by its massless spectrum and ultrahigh mobility, despite frequent (Planckian-limit) scattering. With the onset of Landau quantization in a few T, where the electron-hole plasma resides entirely on the zeroth Landau level, giant linear magnetoresistivity emerges. It is nearly independent of temperature and can be suppressed by proximity screening, indicating a many-body origin. Clear parallels with magnetotransport in strange metals and so-called quantum linear magnetoresistance predicted for Weyl metals offer an interesting playground to further explore relevant physics using this well-defined quantum-critical 2D system. △ Less

Submitted 18 May, 2023; v1 submitted 14 February, 2023; originally announced February 2023.

Comments: 8 pages, 3 figures

Journal ref: Nature 616, 270-274 (2023)

Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks

Authors: Laurent Molino, Leena Aggarwal, Vladimir Enaldiev, Ryan Plumadore, Vladimir Falko, Adina Luican-Mayer

Abstract: Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional mate… ▽ More Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible evolution understood using a string-like model of the domain wall network. We identify two characteristic regimes of domain evolution: (i) elastic bending of partial screw dislocations separating smaller domains with twin stacking and (ii) formation of perfect screw dislocations by merging pairs of primary domain walls. We also show that the latter act as the seeds for the reversible restoration of the inverted polarisation. These results open the possibility to achieve full control over atomically thin semiconducting ferroelectric domains using local electric fields, which is a critical step towards their technological use. △ Less

Submitted 6 October, 2022; originally announced October 2022.

High-order minibands and interband Landau level reconstruction in graphene moire superlattice

Authors: Xiaobo Lu, Jian Tang, John R. Wallbank, Shuopei Wang, Cheng Shen, Shuang Wu, Peng Chen, Wei Yang, **g Zhang, Kenji Watanabe, Takashi Taniguchi, Rong Yang, Dongxia Shi, Dmitri K. Efetov, Vladimir I. Falko, Guangyu Zhang

Abstract: The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of pa… ▽ More The propagation of Dirac fermions in graphene through a long-period periodic potential would result in a band folding together with the emergence of a series of cloned Dirac points (DPs). In highly aligned graphene/hexagonal boron nitride (G/hBN) heterostructures, the lattice mismatch between the two atomic crystals generates a unique kind of periodic structure known as a moiré superlattice. Of particular interests is the emergent phenomena related to the reconstructed band-structure of graphene, such as the Hofstadter butterfly, topological currents, gate dependent pseudospin mixing, and ballistic miniband conduction. However, most studies so far have been limited to the lower-order minibands, e.g. the 1st and 2nd minibands counted from charge neutrality, and consequently the fundamental nature of the reconstructed higher-order miniband spectra still remains largely unknown. Here we report on probing the higher-order minibands of precisely aligned graphene moiré superlattices by transport spectroscopy. Using dual electrostatic gating, the edges of these high-order minibands, i.e. the 3rd and 4th minibands, can be reached. Interestingly, we have observed interband Landau level (LL) crossinginducing gap closures in a multiband magneto-transport regime, which originates from band overlap between the 2nd and 3rd minibands. As observed high-order minibands and LL reconstruction qualitatively match our simulated results. Our findings highlight the synergistic effect of minibands in transport, thus presenting a new opportunity for graphene electronic devices. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Journal ref: Phys. Rev. B 102, 045409,2020

Geometrically Enhanced Thermoelectric Effects in Graphene Nanoconstrictions

Authors: Achim Harzheim, Jean Spiece, Charalambos Evangeli, Edward McCann, Vladimir Falko, Yuewen Sheng, Jamie H. Warner, G. Andrew D. Briggs, Jan A. Mol, Pascal Gehring, Oleg V. Kolosov

Abstract: The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temp… ▽ More The influence of nanostructuring and quantum confinement on the thermoelectric properties of materials has been extensively studied. While this has made possible multiple breakthroughs in the achievable figure of merit, classical confinement, and its effect on the local Seebeck coefficient has mostly been neglected, as has the Peltier effect in general due to the complexity of measuring small temperature gradients locally. Here we report that reducing the width of a graphene channel to 100 nm changes the Seebeck coefficient by orders of magnitude. Using a scanning thermal microscope allows us to probe the local temperature of electrically contacted graphene two-terminal devices or to locally heat the sample. We show that constrictions in mono- and bilayer graphene facilitate a spatially correlated gradient in the Seebeck and Peltier coefficient, as evidenced by the pronounced thermovoltage $V_{th}$ and heating/cooling response $ΔT_{Peltier}$, respectively. This geometry dependent effect, which has not been reported previously in 2D materials, has important implications for measurements of patterned nanostructures in graphene and points to novel solutions for effective thermal management in electronic graphene devices or concepts for single material thermocouples. △ Less

Submitted 29 November, 2018; originally announced November 2018.

Nano-imaging of intersubband transitions in van der Waals quantum wells

Authors: Peter Schmidt, Fabien Vialla, Simone Latini, Mathieu Massicotte, Klaas-Jan Tielrooij, Stefan Mastel, Gabriele Navickaite, Mark Danovich, David A. Ruiz-Tijerina, Celal Yelgel, Vladimir Falko, Kristian Thygesen, Rainer Hillenbrand, Frank H. L. Koppens

Abstract: The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatilit… ▽ More The science and applications of electronics and optoelectronics have been driven for decades by progress in growth of semiconducting heterostructures. Many applications in the infrared and terahertz frequency range exploit transitions between quantized states in semiconductor quantum wells (intersubband transitions). However, current quantum well devices are limited in functionality and versatility by diffusive interfaces and the requirement of lattice-matched growth conditions. Here, we introduce the concept of intersubband transitions in van der Waals quantum wells and report their first experimental observation. Van der Waals quantum wells are naturally formed by two-dimensional (2D) materials and hold unexplored potential to overcome the aforementioned limitations: They form atomically sharp interfaces and can easily be combined into heterostructures without lattice-matching restrictions. We employ near-field local probing to spectrally resolve and electrostatically control the intersubband absorption with unprecedented nanometer-scale spatial resolution. This work enables exploiting intersubband transitions with unmatched design freedom and individual electronic and optical control suitable for photodetectors, LEDs and lasers. △ Less

Submitted 25 June, 2018; originally announced June 2018.

Dissociation of two-dimensional excitons in monolayer WSe2

Authors: Mathieu Massicotte, Fabien Vialla, Peter Schmidt, Mark B. Lundeberg, Simone Latini, Sten Haastrup, Mark Danovich, Diana Davydovskaya, Kenji Watanabe, Takashi Taniguchi, Vladimir I. Falko, Kristian S. Thygesen, Thomas G. Pedersen, Frank H. L. Koppens

Abstract: Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons arising from the enhanced Coulomb interaction in these monolayers suppresses the creation of free carriers. Here, we probe and identify the main exciton dissociation… ▽ More Two-dimensional (2D) semiconducting materials are promising building blocks for optoelectronic applications, many of which require efficient dissociation of excitons into free electrons and holes. However, the strongly bound excitons arising from the enhanced Coulomb interaction in these monolayers suppresses the creation of free carriers. Here, we probe and identify the main exciton dissociation mechanism through time- and spectrally-resolved photocurrent measurements in a monolayer WSe2 p-n junction. We find that under static in-plane electric field, excitons dissociate at a rate corresponding to the one predicted for the tunnel ionization of 2D Wannier-Mott excitons. This study is essential for the understanding of the optoelectronic photoresponse in of 2D semiconductors, and offers design rules for the realization of efficient photodetectors, valley-dependent optoelectronics and novel quantum coherent phases. △ Less

Submitted 19 April, 2018; originally announced April 2018.

Comments: 19 pages, 4 figures

Superconductivity-induced features in electronic Raman spectrum of monolayer graphene

Authors: Aitor García-Ruiz Fuentes, Marcin Mucha-Kruczynski, Vladimir Falko

Abstract: Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic order parameter in a single valley and find a Raman peak at a shift set by the size of the superconducting gap. The height of this peak is proportional to the squar… ▽ More Using the continuum model, we investigate theoretically contribution of the low-energy electronic excitations to the Raman spectrum of superconducting monolayer graphene. We consider superconducting phases characterised by an isotropic order parameter in a single valley and find a Raman peak at a shift set by the size of the superconducting gap. The height of this peak is proportional to the square root of the gap and the third power of the Fermi level, and we estimate its quantum efficiency as $I\sim10^{-14}$. △ Less

Submitted 26 December, 2017; originally announced December 2017.

Comments: 7 pages, 2 figures

Journal ref: Phys. Rev. B 97, 155405 (2018)

Optical identification using imperfections in 2D materials

Authors: Yameng Cao, Alexander J. Robson, Abdullah Alharbi, Jonathan Roberts, Christopher S. Woodhead, Yasir J. Noori, Ramón Bernardo-Gavito, Davood Shahrjerdi, Utz Roedig, Vladimir I. Falko, Robert J. Young

Abstract: The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to… ▽ More The ability to uniquely identify an object or device is important for authentication. Imperfections, locked into structures during fabrication, can be used to provide a fingerprint that is challenging to reproduce. In this paper, we propose a simple optical technique to read unique information from nanometer-scale defects in 2D materials. Flaws created during crystal growth or fabrication lead to spatial variations in the bandgap of 2D materials that can be characterized through photoluminescence measurements. We show a simple setup involving an angle-adjustable transmission filter, simple optics and a CCD camera can capture spatially-dependent photoluminescence to produce complex maps of unique information from 2D monolayers. Atomic force microscopy is used to verify the origin of the optical signature measured, demonstrating that it results from nanometer-scale imperfections. This solution to optical identification with 2D materials could be employed as a robust security measure to prevent counterfeiting. △ Less

Submitted 24 June, 2017; originally announced June 2017.

Comments: 14 pages, 5 figures

Nonlinear model of ice surface softening during friction

Authors: A. V. Khomenko, K. P. Khomenko, V. V. Falko

Abstract: The ice surface softening during friction is shown as a result of spontaneous appearance of shear strain caused by external supercritical heating. This transformation is described by the Kelvin-Voigt equation for viscoelastic medium, by the relaxation equations of Landau-Khalatnikov-type and for heat conductivity. The study reveals that the above-named equations formally coincide with the synerget… ▽ More The ice surface softening during friction is shown as a result of spontaneous appearance of shear strain caused by external supercritical heating. This transformation is described by the Kelvin-Voigt equation for viscoelastic medium, by the relaxation equations of Landau-Khalatnikov-type and for heat conductivity. The study reveals that the above-named equations formally coincide with the synergetic Lorenz system, where the order parameter is reduced to shear strain, stress acts as the conjugate field, and temperature plays the role of a control parameter. Using the adiabatic approximation, the stationary values of these quantities are derived. The examination of dependence of the relaxed shear modulus on strain explains the ice surface softening according to the first-order transition mechanism. The critical heating rate is proportional to the relaxed value of the ice shear modulus and inversely proportional to its typical value. △ Less

Submitted 15 September, 2016; originally announced September 2016.

Comments: 10 pages, 3 figures

Journal ref: Condens. Matter Phys., vol. 19, No. 3, 33002 (2016)

Optical source of individual pairs of color-conjugated photons

Authors: Y. Sherkunov, D. M. Whittaker, V. Falko

Abstract: We demonstrate that Kerr nonlinearity in optical circuits can lead to both resonant four-wave mixing and photon blockade, which can be used for high-yield generation of high-fidelity individual photon pairs with conjugated frequencies. We propose an optical circuit, which, in the optimal pulsed-drive regime, would produce photon pairs at the rate up to $10^5s^{-1}$ (0.5 pairs per pulse) with… ▽ More We demonstrate that Kerr nonlinearity in optical circuits can lead to both resonant four-wave mixing and photon blockade, which can be used for high-yield generation of high-fidelity individual photon pairs with conjugated frequencies. We propose an optical circuit, which, in the optimal pulsed-drive regime, would produce photon pairs at the rate up to $10^5s^{-1}$ (0.5 pairs per pulse) with $g^{(2)}<10^{-2}$ for one of the conjugated frequencies. We show that such a scheme can be utilised to generate color-entangled photons. △ Less

Submitted 25 August, 2016; originally announced August 2016.

Comments: 5+εpages, 6 figures

Journal ref: Scientific Reportsvolume 7, Article number: 11418 (2017)

Rabi oscillations of two-photon states in nonlinear optical resonators

Authors: Y. Sherkunov, David M. Whittaker, Vladimir Falko

Abstract: We demonstrate that four-wave mixing processes in high-quality non-linear resonators can lead to Rabi-like oscillations in photon occupation numbers and second-order correlation functions, being a characteristic feature of the presence of entangled photon pairs in the optical signal. In the case of a system driven by a continuous coherent pump, the oscillations occur in the transient regime. We sh… ▽ More We demonstrate that four-wave mixing processes in high-quality non-linear resonators can lead to Rabi-like oscillations in photon occupation numbers and second-order correlation functions, being a characteristic feature of the presence of entangled photon pairs in the optical signal. In the case of a system driven by a continuous coherent pump, the oscillations occur in the transient regime. We show that driving the system with pulsed coherent pum** would generate strongly anti-bunched photon states. △ Less

Submitted 29 February, 2016; originally announced February 2016.

Comments: 5 pages, 6 figures

Journal ref: Phys. Rev. A 93, 023843 (2016)

WSe2 light-emitting tunneling transistors with enhanced brightness at room temperature

Authors: F. Withers, O. Del Pozo-Zamudio, S. Schwarz, S. Dufferwiel, P. M. Walker, T. Godde, A. P. Rooney, A. Gholinia, C. R. Woods, P. Blake, S. J. Haigh, K. Watanabe, T. Taniguchi, I. L. Aleiner, A. K. Geim, V. I. Falko, A. I. Tartakovskii, K. S. Novoselov

Abstract: Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature ext… ▽ More Monolayers of molybdenum and tungsten dichalcogenides are direct bandgap semiconductors, which makes them promising for opto-electronic applications. In particular, van der Waals heterostructures consisting of monolayers of MoS2 sandwiched between atomically thin hexagonal boron nitride (hBN) and graphene electrodes allows one to obtain light emitting quantum wells (LEQWs) with low-temperature external quantum efficiency (EQE) of 1%. However, the EQE of MoS2 and MoSe2-based LEQWs shows behavior common for many other materials: it decreases fast from cryogenic conditions to room temperature, undermining their practical applications. Here we compare MoSe2 and WSe2 LEQWs. We show that the EQE of WSe2 devices grows with temperature, with room temperature EQE reaching 5%, which is 250x more than the previous best performance of MoS2 and MoSe2 quantum wells in ambient conditions. We attribute such a different temperature dependences to the inverted sign of spin-orbit splitting of conduction band states in tungsten and molybdenum dichalcogenides, which makes the lowest-energy exciton in WSe2 dark. △ Less

Submitted 19 November, 2015; originally announced November 2015.

Position-momentum entangled photon pairs in non-linear wave-guides and transmission lines

Authors: Yury Sherkunov, David M. Whittaker, Vladimir Falko

Abstract: We analyse the correlation properties of light in non-linear wave-guides and transmission lines, predict the position-momentum realization of EPR paradox for photon pairs in Kerr-type non-linear photonic circuits, and we show how two-photon entangled states can be generated and detected. We analyse the correlation properties of light in non-linear wave-guides and transmission lines, predict the position-momentum realization of EPR paradox for photon pairs in Kerr-type non-linear photonic circuits, and we show how two-photon entangled states can be generated and detected. △ Less

Submitted 26 April, 2016; v1 submitted 11 November, 2015; originally announced November 2015.

Comments: 5.5 pages, 3 figures

Journal ref: Phys. Rev. A 93, 043842 (2016)

Twist-controlled resonant tunnelling in graphene-boron nitride-graphene heterostructures

Authors: A. Mishchenko, J. S. Tu, Y. Cao, R. V. Gorbachev, J. R. Wallbank, M. T. Greenaway, V. E. Morozov, S. V. Morozov, M. J. Zhu, S. L. Wong, F. Withers, C. R. Woods, Y. -J. Kim, K. Watanabe, T. Taniguchi, E. E. Vdovin, O. Makarovsky, T. M. Fromhold, V. I. Falko, A. K. Geim, L. Eaves, K. S. Novoselov

Abstract: Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic… ▽ More Recent developments in the technology of van der Waals heterostructures made from two-dimensional atomic crystals have already led to the observation of new physical phenomena, such as the metal-insulator transition and Coulomb drag, and to the realisation of functional devices, such as tunnel diodes, tunnel transistors and photovoltaic sensors. An unprecedented degree of control of the electronic properties is available not only by means of the selection of materials in the stack but also through the additional fine-tuning achievable by adjusting the built-in strain and relative orientation of the component layers. Here we demonstrate how careful alignment of the crystallographic orientation of two graphene electrodes, separated by a layer of hexagonal boron nitride (hBN) in a transistor device, can achieve resonant tunnelling with conservation of electron energy, momentum and, potentially, chirality. We show how the resonance peak and negative differential conductance in the device characteristics induces a tuneable radio-frequency oscillatory current which has potential for future high frequency technology. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: For Supplementary Information see http://www.nature.com/nnano/journal/vaop/ncurrent/extref/nnano.2014.187-s1.pdf

Journal ref: Nature Nanotechnology 9, 808-813 (2014)

Graphene, universality of the quantum Hall effect and redefinition of the SI system

Authors: T. J. B. M. Janssen, N. E. Fletcher, R. Goebel, J. M. Williams, A. Tzalenchuk, R. Yakimova, S. Kubatkin, S. Lara-Avila, V. I. Falko

Abstract: The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial… ▽ More The Système Internationale d'unités (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the exactness of the relationships which link these constants to measurable quantities. Here we directly compare the integer quantum Hall effect in epitaxial graphene with that in GaAs/AlGaAs heterostructures. We find no difference of the quantized resistance value within the relative standard uncertainty of our measurement of 8.6\times10-11, being the most stringent test of the universality of the quantum Hall effect in terms of material independence. △ Less

Submitted 15 September, 2011; v1 submitted 20 May, 2011; originally announced May 2011.

Journal ref: New Journal of Physics, 13 (2011) 093026

Tunable Graphene System with Two Decoupled Monolayers

Authors: H. Schmidt, T. Luedtke, P. Barthold, E. McCann, V. I. Falko, R. J. Haug

Abstract: The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport… ▽ More The use of two truly two-dimensional gapless semiconductors, monolayer and bilayer graphene, as current-carrying components in field-effect transistors (FET) gives access to new types of nanoelectronic devices. Here, we report on the development of graphene-based FETs containing two decoupled graphene monolayers manufactured from a single one folded during the exfoliation process. The transport characteristics of these newly-developed devices differ markedly from those manufactured from a single-crystal bilayer. By analyzing Shubnikov-de Haas oscillations, we demonstrate the possibility to independently control the carrier densities in both layers using top and bottom gates, despite there being only a nano-meter scale separation between them. △ Less

Submitted 29 September, 2008; originally announced September 2008.

Comments: 4 Pages, 4 Fugures

Journal ref: Appl. Phys. Lett. 93, 172108 (2008)

Random resistor network model of minimal conductivity in graphene

Authors: V. V. Cheianov, V. I. Falko, B. L. Altshuler, I. L. Aleiner

Abstract: Transport in undoped graphene is related to percolating current patterns in the networks of {\em N-} and {\em P}-type regions reflecting the strong bipolar charge density fluctuations. Transmissions of the {\em P-N} junctions, though small, are vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the… ▽ More Transport in undoped graphene is related to percolating current patterns in the networks of {\em N-} and {\em P}-type regions reflecting the strong bipolar charge density fluctuations. Transmissions of the {\em P-N} junctions, though small, are vital in establishing the macroscopic conductivity. We propose a random resistor network model to analyze scaling dependencies of the conductance on the do** and disorder, the quantum magnetoresistance and the corresponding dephasing rate. △ Less

Submitted 22 June, 2007; v1 submitted 20 June, 2007; originally announced June 2007.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 99, 176801 (2007)

Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene

Authors: K. S. Novoselov, E. McCann, S. V. Morozov, V. I. Falko, M. I. Katsnelson, U. Zeitler, D. Jiang, F. Schedin, A. K. Geim

Abstract: There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report… ▽ More There are known two distinct types of the integer quantum Hall effect. One is the conventional quantum Hall effect, characteristic of two-dimensional semiconductor systems, and the other is its relativistic counterpart recently observed in graphene, where charge carriers mimic Dirac fermions characterized by Berry's phase pi, which results in a shifted positions of Hall plateaus. Here we report a third type of the integer quantum Hall effect. Charge carriers in bilayer graphene have a parabolic energy spectrum but are chiral and exhibit Berry's phase 2pi affecting their quantum dynamics. The Landau quantization of these fermions results in plateaus in Hall conductivity at standard integer positions but the last (zero-level) plateau is missing. The zero-level anomaly is accompanied by metallic conductivity in the limit of low concentrations and high magnetic fields, in stark contrast to the conventional, insulating behavior in this regime. The revealed chiral fermions have no known analogues and present an intriguing case for quantum-mechanical studies. △ Less

Submitted 23 February, 2006; originally announced February 2006.

Comments: to appear in Nature Physics

Journal ref: Nature Physics 2, 177-180 (2006)

New type of $B$-periodic magneto-oscillations in a two-dimensional electron system induced by microwave irradiation

Authors: I. V. Kukushkin, M. Yu. Akimov, J. H. Smet, S. A. Mikhailov, K. von Klitzing, I. L. Aleiner, V. I. Falko

Abstract: We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave irradiation and are periodic in magnetic field. The period is determined by the microwave frequency, the electron density, and the distance between potential probes. The phenomenon is accounted for by coherent excitation… ▽ More We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave irradiation and are periodic in magnetic field. The period is determined by the microwave frequency, the electron density, and the distance between potential probes. The phenomenon is accounted for by coherent excitation of edge magnetoplasmons in the regions near the contacts and offers perspectives for the development of new tunable microwave and terahertz detection schemes and spectroscopic techniques. △ Less

Submitted 11 December, 2003; originally announced December 2003.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. Lett. 92, 236803 (2004)

Weak localization and conductance fluctuations in a quantum dot with parallel magnetic field and spin-orbit scattering

Authors: Jan-Hein Cremers, Piet W. Brouwer, Vladimir I. Falko

Abstract: In the presence of both spin-orbit scattering and a magnetic field the conductance of a chaotic GaAs quantum dot displays quite a rich behavior. Using a Hamiltonian derived by Aleiner and Falko [Phys. Rev. Lett. 87, 256801 (2001)] we calculate the weak localization correction and the covariance of the conductance, as a function of parallel and perpendicular magnetic field and spin-orbit coupling… ▽ More In the presence of both spin-orbit scattering and a magnetic field the conductance of a chaotic GaAs quantum dot displays quite a rich behavior. Using a Hamiltonian derived by Aleiner and Falko [Phys. Rev. Lett. 87, 256801 (2001)] we calculate the weak localization correction and the covariance of the conductance, as a function of parallel and perpendicular magnetic field and spin-orbit coupling strength. We also show how the combination of an in-plane magnetic field and spin-orbit scattering gives rise to a component to the magnetoconductance that is anti-symmetric with respect to reversal of the perpendicular component of the magnetic field and how spin-orbit scattering leads to a "magnetic-field echo" in the conductance autocorrelation function. Our results can be used for a measurement of the Dresselhaus and Bychkov-Rashba spin-orbit scattering lengths in a GaAs/GaAlAs heterostructure. △ Less

Submitted 9 April, 2003; originally announced April 2003.

Comments: 15 pages, RevTeX, 5 figures

Journal ref: Phys. Rev. B 68, 125329 (2003)

Conductivity activation energy for bilayer hetero-structures at integer filling numbers

Authors: V. Falko, S. V. Iordanski, A. Kashuba

Abstract: We report on study of low-energy excitations in a bilayer hetero-structure 2D electron gas. We split the bilayer Hamiltonian into SU(4)-symmetric part and the anisotropy part and treat the latter as a perturbation. We find that both Goldstone and the charged excitations - skyrmions - are goverened by the non-linear Sigma Model. We calculate the anisotropic energy gap of the skyrmion to have a pr… ▽ More We report on study of low-energy excitations in a bilayer hetero-structure 2D electron gas. We split the bilayer Hamiltonian into SU(4)-symmetric part and the anisotropy part and treat the latter as a perturbation. We find that both Goldstone and the charged excitations - skyrmions - are goverened by the non-linear Sigma Model. We calculate the anisotropic energy gap of the skyrmion to have a prominent minimum in the canted antiferromagnetic phase of bilayer. We compare our findings with the results of recent experiments. △ Less

Submitted 8 March, 2000; originally announced March 2000.

Comments: latex, 25 pages, 5 figures

Distribution of time-constants for tunneling through a 1D Disordered Chain

Authors: C. J. Bolton-Heaton, C. J. Lambert, Vladimir I. Falko, V. Prigodin, A. J. Epstein

Abstract: The dynamics of electronic tunneling through a disordered 1D chain of finite length is considered. We calculate distributions of the transmission coefficient T, Wigner delay time and, $τ_φ$ and the transport time, $τ_t=Tτ_φ$. The central bodies of these distributions have a power-law form, what can be understood in terms of the resonant tunneling through localised states. The dynamics of electronic tunneling through a disordered 1D chain of finite length is considered. We calculate distributions of the transmission coefficient T, Wigner delay time and, $τ_φ$ and the transport time, $τ_t=Tτ_φ$. The central bodies of these distributions have a power-law form, what can be understood in terms of the resonant tunneling through localised states. △ Less

Submitted 25 February, 1999; originally announced February 1999.

Comments: 5 pages, 3 figures, submitted to PRB

Lévy flights in quantum transport in quasi-ballistic wires

Authors: M. Leadbeater, V. I. Falko, C. J. Lambert

Abstract: Conductance fluctuations, localization and statistics of Lyapunov exponents are studied numerically in pure metallic wires with rough boundaries (quasi-ballistic wires). We find that the correlation energy of conductance fluctuations scales anomalously with the sample dimensions, indicating the role of Lévy flights. Application of a magnetic field deflects the Lévy flights which reduces the loca… ▽ More Conductance fluctuations, localization and statistics of Lyapunov exponents are studied numerically in pure metallic wires with rough boundaries (quasi-ballistic wires). We find that the correlation energy of conductance fluctuations scales anomalously with the sample dimensions, indicating the role of Lévy flights. Application of a magnetic field deflects the Lévy flights which reduces the localization length. This deflection also breaks the geometrical flux cancellation and restores the usual Aharonov-Bohm type magneto-conductance fluctuations. △ Less

Submitted 11 February, 1999; originally announced February 1999.

Comments: Available also at http://roberto.fis.uniroma3.it/leadbeat/pub.html

Journal ref: Phys. Rev. Letts. Volume 81, Issue 6, (1998) pp. 1274-1277