Showing 1–8 of 8 results for author: Falin, A

Mechanical Properties of Atomically Thin Tungsten Dichalcogenides: WS$_2$, WSe$_2$ and WTe$_2$

Authors: Alexey Falin, Matthew Holwill, Haifeng Lv, Wei Gan, Jun Cheng, Rui Zhang, Dong Qian, Matthew R. Barnett, Elton J. G. Santos, Konstantin S. Novoselov, Tao Tao, Xiaojun Wu, Lu Hua Li

Abstract: Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS… ▽ More Two-dimensional (2D) tungsten disulfide (WS$_2$), tungsten diselenide (WSe$_2$), and tungsten ditelluride (WTe$_2$) draw increasing attention due to their attractive properties deriving from the heavy tungsten and chalcogenide atoms, but their mechanical properties are still mostly unknown. Here, we determine the intrinsic and air-aged mechanical properties of mono-, bi-, and trilayer (1-3L) WS$_2$, WSe$_2$ and WTe$_2$ using a complementary suite of experiments and theoretical calculations. High-quality 1L WS$_2$ has the highest Young's modulus (302.4+-24.1 GPa) and strength (47.0+-8.6 GPa) of the entire family, overpassing those of 1L WSe$_2$ (258.6+-38.3 and 38.0+-6.0 GPa, respectively) and WTe$_2$ (149.1+-9.4 and 6.4+-3.3 GPa, respectively). However, the elasticity and strength of WS$_2$ decrease most dramatically with increased thickness among the three materials. We interpret the phenomenon by the different tendencies for interlayer sliding in equilibrium state and under in-plane strain and out-of-plane compression conditions in the indentation process, revealed by finite element method (FEM) and density functional theory (DFT) calculations including van der Waals (vdW) interactions. We also demonstrate that the mechanical properties of the high-quality 1-3L WS$_2$ and WSe$_2$ are largely stable in the air for up to 20 weeks. Intriguingly, the 1-3L WSe$_2$ shows increased modulus and strength values with aging in the air. This is ascribed to oxygen do**, which reinforces the structure. The present study will facilitate the design and use of 2D tungsten dichalcogenides in applications, such as strain engineering and flexible field-effect transistors (FETs). △ Less

Submitted 28 January, 2021; originally announced January 2021.

Journal ref: ACS Nano 2021

Layer-dependent mechanical properties and enhanced plasticity in the van der Waals chromium trihalide magnets

Authors: Fernando Cantos-Prieto, Alexey Falin, Martin Alliati, Dong Qian, Rui Zhang, Tao Tao, Matthew R. Barnett, Elton J. G. Santos, Lu Hua Li, Efren Navarro-Moratalla

Abstract: The mechanical properties of magnetic materials are instrumental for the development of the magnetoelastic theory and the optimization of strain-modulated magnetic devices. In particular, two-dimensional (2D) magnets hold promise to enlarge these concepts into the realm of low-dimensional physics and ultrathin devices. However, no experimental study on the intrinsic mechanical properties of the ar… ▽ More The mechanical properties of magnetic materials are instrumental for the development of the magnetoelastic theory and the optimization of strain-modulated magnetic devices. In particular, two-dimensional (2D) magnets hold promise to enlarge these concepts into the realm of low-dimensional physics and ultrathin devices. However, no experimental study on the intrinsic mechanical properties of the archetypal 2D magnet family of the chromium trihalides has thus far been performed. Here, we report the room temperature layer-dependent mechanical properties of atomically thin CrI3 and CrCl3, finding that bilayers of CrI3 and CrCl3 have Young's moduli of 62.1 GPa and 43.4 GPa, with the highest sustained strain of 6.09% and 6.49% and breaking strengths of 3.6 GPa and 2.2 GPa, respectively. Both the elasticity and strength of the two materials decrease with increased thickness, which is attributed to a weak interlayer interaction that enables interlayer sliding under low levels of applied load. The mechanical properties observed in the few-layer chromium trihalide crystals provide evidence of outstanding plasticity in these materials, which is qualitatively demonstrated in their bulk counterparts. This study will contribute to various applications of the van der Waals magnetic materials, especially for their use in magnetostrictive and flexible devices. △ Less

Submitted 1 April, 2021; v1 submitted 2 November, 2020; originally announced November 2020.

Comments: Main text and supplementary information

Mechanical Properties of Atomically Thin Boron Nitride and the Role of Interlayer Interactions

Authors: Aleksey Falin, Qiran Cai, Elton J. G. Santos, Declan Scullion, Dong Qian, Rui Zhang, Zhi Yang, Shaoming Huang, Kenji Watanabe, Takashi Taniguchi, Matthew R. Barnett, Ying Chen, Rodney S. Ruoff, Lu Hua Li

Abstract: Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer… ▽ More Atomically thin boron nitride (BN) nanosheets are important two-dimensional nanomaterials with many unique properties distinct from those of graphene, but the investigation of their mechanical properties still greatly lacks. Here we report that high-quality single-crystalline mono- and few-layer BN nanosheets are one of the strongest electrically insulating materials. More intriguingly, few-layer BN shows mechanical behaviors quite different from those of few-layer graphene under indentation. In striking contrast to graphene, whose strength decreases by more than 30% when the number of layers increases from 1 to 8, the mechanical strength of BN nanosheets is not sensitive to increasing thickness. We attribute this difference to the distinct interlayer interactions and hence sliding tendencies in these two materials under indentation. The significantly better mechanical integrity of BN nanosheets makes them a more attractive candidate than graphene for several applications, e.g. as mechanical reinforcements. △ Less

Submitted 2 August, 2020; originally announced August 2020.

Journal ref: NATURE COMMUNICATIONS | 8:15815 | 2017

Raman Signature and Phonon Dispersion of Atomically Thin Boron Nitride

Authors: Qiran Cai, Declan Scullion, Aleksey Falin, Kenji Watanabe, Takashi Taniguchi, Ying Chen, Elton J. G. Santos, Lu Hua Li

Abstract: Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin boron nitride (BN), which has many unique properties distinct from graphene. Such a knowledge gap greatly affects the understanding of basic physical and chemical… ▽ More Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin boron nitride (BN), which has many unique properties distinct from graphene. Such a knowledge gap greatly affects the understanding of basic physical and chemical properties of atomically thin BN as well as the use of Raman spectroscopy to study these nanomaterials. Here, we use both experiment and simulation to reveal the intrinsic Raman signature of monolayer and few-layer BN. We find experimentally that atomically thin BN without interaction with substrate has a G band frequency similar to that of bulk hexagonal BN, but strain induced by substrate can cause pronounced Raman shifts. This is in excellent agreement with our first-principles density functional theory (DFT) calculations at two levels of theory, including van der Waals dispersion forces (opt-vdW) and a fractional of the exact exchange from Hartree-Fock (HF) theory through hybrid HSE06 functional. Both calculations demonstrate that the intrinsic E2g mode of BN does not depend sensibly on the number of layers. Our simulations also suggest the importance of the exact exchange mixing parameter in calculating the vibrational modes in BN, as it determines the fraction of HF exchange included in the DFT calculations. △ Less

Submitted 2 August, 2020; originally announced August 2020.

Journal ref: Nanoscale 9, 3059-3067(2017)

Atomically Thin Boron Nitride as an Ideal Spacer for Metal-Enhanced Fluorescence

Authors: Wei Gan, Christos Tserkezis, Qiran Cai, Alexey Falin, Srikanth Mateti, Minh Nguyen, Igor Aharonovich, Kenji Watanabe, Takashi Taniguchi, Fumin Huang, Li Song, Lingxue Kong, Ying Chen, Lu Hua Li

Abstract: The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study,… ▽ More The metal-enhanced fluorescence (MEF) considerably enhances the luminescence for various applications, but its performance largely depends on the dielectric spacer between the fluorophore and plasmonic system. It is still challenging to produce a defect-free spacer having an optimized thickness with a subnanometer accuracy that enables reusability without affecting the enhancement. In this study, we demonstrate the use of atomically thin hexagonal boron nitride (BN) as an ideal MEF spacer owing to its multifold advantages over the traditional dielectric thin films. With rhodamine 6G as a representative fluorophore, it largely improves the enhancement factor (up to ~95+-5), sensitivity (10^-8 M), reproducibility, and reusability (~90% of the plasmonic activity is retained after 30 cycles of heating at 350 °C in air) of MEF. This can be attributed to its two-dimensional structure, thickness control at the atomic level, defect-free quality, high affinities to aromatic fluorophores, good thermal stability, and excellent impermeability. The atomically thin BN spacers could increase the use of MEF in different fields and industries. △ Less

Submitted 2 August, 2020; originally announced August 2020.

Journal ref: ACS Nano 13, 12184-12191(2019)

Two-dimensional van der Waals Heterostructures for Synergistically Improved Surface Enhanced Raman Spectroscopy

Authors: Qiran Cai, Wei Gan, Alexey Falin, Kenji Watanabe, Takashi Taniguchi, **cheng Zhuang, Weichang Hao, Shaoming Huang, Tao Tao, Ying Chen, Lu Hua Li

Abstract: Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with minimum fluorescence background. In this work, we propose the use of van der Waals hete… ▽ More Surface enhanced Raman spectroscopy (SERS) is a precise and non-invasive analytical technique that is widely used in chemical analysis, environmental protection, food processing, pharmaceutics, and diagnostic biology. However, it is still a challenge to produce highly sensitive and reusable SERS substrates with minimum fluorescence background. In this work, we propose the use of van der Waals heterostructures of two-dimensional materials (2D materials) to cover plasmonic metal nanoparticles to solve this challenge. The heterostructures of atomically thin boron nitride (BN) and graphene provide synergistic effects: (1) electrons could tunnel through the atomically thin BN, allowing the charge transfer between graphene and probe molecules to suppress fluorescence background; (2) the SERS sensitivity is enhanced by graphene via chemical enhancement mechanism (CM) in addition to electromagnetic field mechanism (EM); (3) the atomically thin BN protects the underlying graphene and Ag nanoparticles from oxidation during heating for regeneration at 360 °C in the air so that the SERS substrates could be reused. These advances will facilitate wider applications of SERS, especially on the detection of fluorescent molecules with higher sensitivity. △ Less

Submitted 2 August, 2020; originally announced August 2020.

Journal ref: ACS Applied Materials Interfaces 12, 21985-21991(2020)

Outstanding Thermal Conductivity of Single Atomic Layer Isotope-Modified Boron Nitride

Authors: Qiran Cai, Declan Scullion, Wei Gan, Alexey Falin, Pavel Cizek, Song Liu, James H. Edgar, Rong Liu, Bruce C. C. Cowie, Elton J. G. Santos, Lu Hua Li

Abstract: Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k u… ▽ More Materials with high thermal conductivities (k) is valuable to solve the challenge of waste heat dissipation in highly integrated and miniaturized modern devices. Herein, we report the first synthesis of atomically thin isotopically pure hexagonal boron nitride (BN) and its one of the highest k among all semiconductors and electric insulators. Single atomic layer (1L) BN enriched with 11B has a k up to 1009 W/mK at room temperature. We find that the isotope engineering mainly suppresses the out-of-plane optical (ZO) phonon scatterings in BN, which subsequently reduces acoustic-optical scatterings between ZO and transverse acoustic (TA) and longitudinal acoustic (LA) phonons. On the other hand, reducing the thickness to single atomic layer diminishes the interlayer interactions and hence Umklapp scatterings of the out-of-plane acoustic (ZA) phonons, though this thickness-induced k enhancement is not as dramatic as that in naturally occurring BN. With many of its unique properties, atomically thin monoisotopic BN is promising on heat management in van der Waals (vdW) devices and future flexible electronics. The isotope engineering of atomically thin BN may also open up other appealing applications and opportunities in 2D materials yet to be explored. △ Less

Submitted 21 August, 2020; v1 submitted 2 August, 2020; originally announced August 2020.

Journal ref: Physical Review Letters 125, 085902 (2020)

High thermal conductivity of high-quality monolayer boron nitride and its thermal expansion

Authors: Qiran Cai, Declan Scullion, Wei Gan, Aleksey Falin, Shunying Zhang, Kenji Watanabe, Takashi Taniguchi, Ying Chen, Elton J. G. Santos, Lu Hua Li

Abstract: Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance. Here, we report that high-quality monolayer boron nitride (BN) has a thermal conductivity (\k{appa}) of 751 W/mK at room temperature. Though smaller than that of… ▽ More Heat management becomes more and more critical, especially in miniaturized modern devices, so the exploration of highly thermally conductive materials with electrical insulation and favorable mechanical properties is of great importance. Here, we report that high-quality monolayer boron nitride (BN) has a thermal conductivity (\k{appa}) of 751 W/mK at room temperature. Though smaller than that of graphene, this value is larger than that of cubic boron nitride (cBN) and only second to those of diamond and lately discovered cubic boron arsenide (BAs). Monolayer BN has the second largest \k{appa} per unit weight among all semiconductors and insulators, just behind diamond, if density is considered. The \k{appa} of atomically thin BN decreases with increased thickness. Our large-scale molecular dynamic simulations using Green-Kubo formalism accurately reproduce this trend, and the density functional theory (DFT) calculations reveal the main scattering mechanism. The thermal expansion coefficients (TECs) of monolayer to trilayer BN at 300-400 K are also experimentally measured, and the results are comparable to atomistic ab initio DFT calculations in a wider range of temperatures. Thanks to its wide bandgap, high thermal conductivity, outstanding strength, good flexibility, and excellent thermal and chemical stability, atomically thin BN is a strong candidate for heat dissipation applications, especially in the next generation of flexible electronic devices. △ Less

Submitted 26 March, 2019; v1 submitted 21 March, 2019; originally announced March 2019.

Journal ref: Science Advances 2019