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Phosphorus oxide gate dielectric for black phosphorus field effect transistors
Authors:
W. Dickerson,
V. Tayari,
I. Fakih,
A. Korinek,
M. Caporali,
M. Serrano-Ruiz,
M. Peruzzini,
S. Heun,
G. A. Botton,
T. Szkopek
Abstract:
The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of…
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The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2/Vs in ambient conditions, which we attribute to the low defect density of the bP/POx interface.
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Submitted 10 April, 2018;
originally announced April 2018.
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Quasi-two-dimensional thermoelectricity in SnSe
Authors:
V. Tayari,
B. V. Senkovskiy,
D. Rybkovskiy,
N. Ehlen,
A. Fedorov,
C. -Y. Chen,
J. Avila,
M. Asensio,
A. Perucchi,
P. di Pietro,
L. Yashina,
I. Fakih,
N. Hemsworth,
M. Petrescu,
G. Gervais,
A. Grüneis,
T. Szkopek
Abstract:
Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valle…
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Stannous selenide is a layered semiconductor that is a polar analogue of black phosphorus, and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle resolved photo-emission spectroscopy, optical reflection spectroscopy and magnetotransport measurements reveal a multiple-valley valence band structure and a quasi two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to $250~\mathrm{cm^2/Vs}$ at $T=1.3~\mathrm{K}$. SnSe is thus found to be a high quality, quasi two-dimensional semiconductor ideal for thermoelectric applications.
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Submitted 22 February, 2018;
originally announced February 2018.
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Two-Dimensional Magnetotransport in a Black Phosphorus Naked Quantum Well
Authors:
V. Tayari,
N. Hemsworth,
I. Fakih,
A. Favron,
E. Gaufrès,
G. Gervais,
R. Martel,
T. Szkopek
Abstract:
Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have o…
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Black phosphorus (bP) is the second known elemental allotrope with a layered crystal structure that can be mechanically exfoliated down to atomic layer thickness. We have fabricated bP naked quantum wells in a back-gated field effect transistor geometry with bP thicknesses ranging from $6\pm1$ nm to $47\pm1$ nm. Using an encapsulating polymer superstrate, we have suppressed bP oxidation and have observed field effect mobilities up to 600 cm$^2$/Vs and on/off current ratios exceeding $10^5$. Importantly, Shubnikov-de Haas (SdH) oscillations observed in magnetotransport measurements up to 35 T reveal the presence of a 2-D hole gas with Schrödinger fermion character in an accumulation layer at the bP/oxide interface. Our work demonstrates that 2-D electronic structure and 2-D atomic structure are independent. 2-D carrier confinement can be achieved in layered semiconducting materials without necessarily approaching atomic layer thickness, advantageous for materials that become increasingly reactive in the few-layer limit such as bP.
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Submitted 30 November, 2014;
originally announced December 2014.
