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Coherent magnon-induced domain wall motion in a magnetic insulator channel
Authors:
Yabin Fan,
Miela J. Gross,
Takian Fakhrul,
Joseph Finley,
Justin T. Hou,
Luqiao Liu,
Caroline A. Ross
Abstract:
Advancing the development of spin-wave devices requires high-quality low-dam** magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain walls (DW) can modulate spin-wave transport in perpendicularly magnetized channels of Bi-doped yttrium-iron-garnet (BiYIG). Conversely, we demonstrate that the mag…
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Advancing the development of spin-wave devices requires high-quality low-dam** magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain walls (DW) can modulate spin-wave transport in perpendicularly magnetized channels of Bi-doped yttrium-iron-garnet (BiYIG). Conversely, we demonstrate that the magnon spin current can drive DW motion in the BiYIG channel device by means of magnon spin-transfer torque. The DW can be reliably moved over 15 um distances at zero applied magnetic field by a magnon spin current excited by an RF pulse as short as 1 ns. The required energy for driving DW motion is orders of magnitude smaller than those reported for metallic systems. These results facilitate low-switching-energy magnonic devices and circuits where magnetic domains can be efficiently reconfigured by magnon spin currents flowing within magnetic channels.
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Submitted 2 December, 2022;
originally announced December 2022.
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Magneto-Optical Properties of InSb for Infrared Spectral Filtering
Authors:
Nolan Peard,
Dennis Callahan,
Joy C. Perkinson,
Qingyang Du,
Neil S. Patel,
Takian Fakhrul,
John LeBlanc,
Caroline A. Ross,
Juejun Hu,
Christine Y. Wang
Abstract:
We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near $10^{17}$ $\text{cm}^{-3}$ in the $λ$ = 8 $μ$m - 12 $μ$m long-wave infrared regime. The absorption coefficient was measured and a figure of merit calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrate th…
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We present measurements of the Faraday effect in n-type InSb. The Verdet coefficient was determined for a range of carrier concentrations near $10^{17}$ $\text{cm}^{-3}$ in the $λ$ = 8 $μ$m - 12 $μ$m long-wave infrared regime. The absorption coefficient was measured and a figure of merit calculated for each sample. From these measurements, we calculated the carrier effective mass and illustrate the variation of the figure of merit with wavelength. A method for creating a tunable bandpass filter via the Faraday rotation is discussed along with preliminary results from a prototype device.
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Submitted 28 November, 2020; v1 submitted 18 August, 2020;
originally announced August 2020.
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Monolithic integration of broadband optical isolators for polarization-diverse silicon photonics
Authors:
Yan Zhang,
Qingyang Du,
Chuangtang Wang,
Takian Fakhrul,
Shuyuan Liu,
Longjiang Deng,
Duanni Huang,
Paolo Pintus,
John Bowers,
Caroline A. Ross,
Juejun Hu,
Lei Bi
Abstract:
Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet…
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Integrated optical isolators have been a longstanding challenge for photonic integrated circuits (PIC). An ideal integrated optical isolator for PIC should be made by a monolithic process, have a small footprint, exhibit broadband and polarization-diverse operation, and be compatible with multiple materials platforms. Despite significant progress, the optical isolators reported so far do not meet all these requirements. In this article we present monolithically integrated broadband magneto-optical isolators on silicon and silicon nitride (SiN) platforms operating for both TE and TM modes with record high performances, fulfilling all the essential characteristics for PIC applications. In particular, we demonstrate fully-TE broadband isolators by depositing high quality magneto-optical garnet thin films on the sidewalls of Si and SiN waveguides, a critical result for applications in TE-polarized on-chip lasers and amplifiers. This work demonstrates monolithic integration of high performance optical isolators on chip for polarization-diverse silicon photonic systems, enabling new pathways to impart nonreciprocal photonic functionality to a variety of integrated photonic devices.
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Submitted 24 January, 2019;
originally announced February 2019.
