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Fabrication of Ultrathin Single-Crystal Diamond Membranes
Authors:
B. A. Fairchild,
P. Olivero,
S. Rubanov,
A. D. Greentree,
F. Waldermann,
R. A. Taylor,
I. Walmsley,
J. M. Smith,
S. Huntington,
B. C. Gibson,
D. N. Jamieson,
S. Prawer
Abstract:
We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from sin…
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We demonstrate the fabrication of sub-micron layers of single-crystal diamond suitable for subsequent processing as demonstrated by this test ring structure. This method is a significant enabling technology for nanomechanical and photonic structures incorporating colour-centres. The process uses a novel double implant process, annealing and chemical etching to produce membranes of diamond from single-crystal starting material, the thinnest layers achieved to date are 210 nm thick.
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Submitted 31 August, 2016;
originally announced August 2016.
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An upper limit on the lateral vacancy diffusion length in diamond
Authors:
J. O. Orwa,
K. Ganesan,
J. Newnham,
C. Santori,
P. Barclay,
K. M. C. Fu,
R. G. Beausoleil,
I. Aharonovich,
B. A. Fairchild,
P. Olivero,
A. D. Greentree,
S. Prawer
Abstract:
Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted r…
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Ion implantation is widely used to modify the structural, electrical and optical properties of materials. By appropriate masking, this technique can be used to define nano- and micro-structures. However, depending on the type of mask used, experiments have shown that vacancy-related substrate modification can be inferred tens of microns away from the edge of the mask used to define the implanted region. This could be due to fast diffusion of vacancies from the implanted area during annealing or to a geometric effect related to ion scattering around the mask edges. For quantum and single-atom devices, stray ion damage can be deleterious and must be minimized. In order to profile the distribution of implantation-induced damage, we have used the nitrogen-vacancy colour centre as a sensitive marker for vacancy concentration and distribution following MeV He ion implantation into diamond and annealing. Results show that helium atoms implanted through a mask clamped to the diamond surface are scattered underneath the mask to distances in the range of tens of micrometers from the mask edge. Implantation through a lithographically defined and deposited mask, with no spacing between the mask and the substrate, significantly reduces the scattering to <5 m but does not eliminate it. These scattering distances are much larger than the theoretically estimated vacancy diffusion distance of 260 nm under similar conditions. This paper shows that diffusion, upon annealing, of vacancies created by ion implantation in diamond is limited and the appearance of vacancies many tens of micrometers from the edge of the mask is due to scattering effects.
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Submitted 25 August, 2016;
originally announced August 2016.
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Structural transformation of implanted diamond layers during high temperature annealing
Authors:
S. Rubanov,
B. A. Fairchild,
A. Suvorova,
P. Olivero,
S. Prawer
Abstract:
In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. T…
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In the recent years graphitization of ion-beam induced amorphous layers became the basic tool for device fabrication in diamond. The etchable graphitic layers can be removed to form free-standing membranes into which the desired structures can be sculpted using FIB milling. The optical properties of the devices fabricated using this method are assumed on the model of sharp diamond-air interface. The real quality of this interface could depend on degree of graphitization of the amorphous damage layers after annealing. In the present work the graphitization process was studied using conventional and analytical TEM. It was found that annealing at 550 °C results in a partial graphitization of the implanted volume with formation of the nano-crystalline graphitic phase sandwiched between layers of tetrahedral amorphous carbon. Annealing at 1400 °C resulted in complete graphitization of the amorphous layers. The average size of graphite nano-crystals did not exceed 5 nm with predominant orientation of c-planes normal to the sample surface.
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Submitted 25 August, 2016;
originally announced August 2016.
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Direct measurement and modelling of internal strains in ion-implanted diamond
Authors:
Federico Bosia,
Nicola Argiolas,
Marco Bazzan,
Barbara A. Fairchild,
Andrew D. Greentree,
Desmond W. M. Lau,
Paolo Olivero,
Federico Picollo,
Sergey Rubanov,
Steven Prawer
Abstract:
We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density varia…
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We present a phenomenological model and Finite Element simulations to describe the depth variation of mass density and strain of ion-implanted single-crystal diamond. Several experiments are employed to validate the approach: firstly, samples implanted with 180 keV B ions at relatively low fluences are characterized using high-resolution X-ray diffraction (HR-XRD); secondly, the mass density variation of a sample implanted with 500 keV He ions well above its amorphization threshold is characterized with Electron Energy Loss Spectroscopy (EELS). At high damage densities, the experimental depth profiles of strain and density display a saturation effect with increasing damage and a shift of the damage density peak towards greater depth values with respect to those predicted by TRIM simulations, which are well accounted for in the model presented here. The model is then further validated by comparing TEM-measured and simulated thickness values of a buried amorphous carbon layer formed at different depths by implantation of 500 keV He ions through a variable-thickness mask to simulate the simultaneous implantation of ions at different energies.
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Submitted 1 March, 2013;
originally announced March 2013.
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Splitting of photo-luminescent emission from nitrogen-vacancy centers in diamond induced by ion-damage-induced stress
Authors:
P. Olivero,
F. Bosia,
B. A. Fairchild,
B. C. Gibson,
A. D. Greentree,
P. Spizzirri,
S. Prawer
Abstract:
We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly disti…
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We report a systematic investigation on the spectral splitting of negatively charged, nitrogen-vacancy (NV-) photo-luminescent emission in single crystal diamond induced by strain engineering. The stress fields arise from MeV ion-induced conversion of diamond to amorphous and graphitic material in regions proximal to the centers of interest. In low-nitrogen sectors of a HPHT diamond, clearly distinguishable spectral components in the NV- emission develop over a range of 4.8 THz corresponding to distinct alignment of sub-ensembles which were mapped with micron spatial resolution. This method provides opportunities for the creation and selection of aligned NV- centers for ensemble quantum information protocols.
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Submitted 11 February, 2013;
originally announced February 2013.
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Fabrication and electrical characterization of three-dimensional graphitic microchannels in single crystal diamond
Authors:
F. Picollo,
D. Gatto Monticone,
P. Olivero,
B. A. Fairchild,
S. Rubanov,
S. Prawer,
E. Vittone
Abstract:
We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickn…
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We report on the systematic characterization of conductive micro-channels fabricated in single-crystal diamond with direct ion microbeam writing. Focused high-energy (~MeV) helium ions are employed to selectively convert diamond with micrometric spatial accuracy to a stable graphitic phase upon thermal annealing, due to the induced structural damage occurring at the end-of-range. A variable-thickness mask allows the accurate modulation of the depth at which the microchannels are formed, from several μm deep up to the very surface of the sample. By means of cross-sectional transmission electron microscopy (TEM) we demonstrate that the technique allows the direct writing of amorphous (and graphitic, upon suitable thermal annealing) microstructures extending within the insulating diamond matrix in the three spatial directions, and in particular that buried channels embedded in a highly insulating matrix emerge and electrically connect to the sample surface at specific locations. Moreover, by means of electrical characterization both at room temperature and variable temperature, we investigate the conductivity and the charge-transport mechanisms of microchannels obtained by implantation at different ion fluences and after subsequent thermal processes, demonstrating that upon high-temperature annealing, the channels implanted above a critical damage density convert to a stable graphitic phase. These structures have significant impact for different applications, such as compact ionizing radiation detectors, dosimeters, bio-sensors and more generally diamond-based devices with buried three-dimensional all-carbon electrodes.
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Submitted 13 April, 2012;
originally announced April 2012.
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Processing of Photonic Crystal Nanocavity for Quantum Information in Diamond
Authors:
Igal Bayn,
Boris Meyler,
Alex Lahav,
Joseph Salzman,
Rafi Kalish,
Barbara A. Fairchild,
Steven Prawer,
Michael Barth,
Oliver Benson,
Thomas Wolf,
Petr Siyushev,
Fedor Jelezko,
Jorg Wrachtrup
Abstract:
The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme chemical and mechanical properties of this material. The present work summarizes the state of the art in the realization of PC's in diamond. It is bas…
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The realization of photonic crystals (PC) in diamond is of major importance for the entire field of spintronics based on fluorescent centers in diamond. The processing steps for the case of diamond differ from those commonly used, due to the extreme chemical and mechanical properties of this material. The present work summarizes the state of the art in the realization of PC's in diamond. It is based on the creation of a free standing diamond membrane into which the desired nano-sized patterns are milled by the use of Focused-Ion-Beam (FIB). The optimal fabrication-oriented structure parameters are predicted by simulations. The milling strategies, the method of formation the diamond membrane, recipes for dielectric material-manipulation in FIB and optical characterization constraints are discussed in conjunction with their implication on PC cavity design. The thus produced structures are characterized via confocal photoluminescence.
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Submitted 29 December, 2010;
originally announced December 2010.
