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Van der Waals epitaxy of Weyl-semimetal Td-WTe$_2$
Authors:
Alexandre Llopez,
Frédéric Leroy,
Calvin Tagne-Kaegom,
Boris Croes,
Adrien Michon,
Chiara Mastropasqua,
Mohamed Al Khalfioui,
Stefano Curiotto,
Pierre Müller,
Andrés Saùl,
Bertrand Kierren,
Geoffroy Kremer,
Patrick Le Fèvre,
François Bertran,
Yannick Fagot-Revurat,
Fabien Cheynis
Abstract:
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we…
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Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by molecular beam epitaxy (MBE) in litterature is only a fewtens of nanometers, which is not suitable for an implementation of devices at large lateral scales.Here we report the growth of Td-WTe$_2$ ultrathin films by MBE on monolayer (ML) graphenereaching a mean flake size of $\cong$110nm, which is, on overage, more than three time larger thanprevious results. WTe$_2$ films thicker than 5nm have been successfully synthesized and exhibit theexpected Td-phase atomic structure. We rationalize epitaxial growth of Td-WTe$_2$ and propose asimple model to estimate the mean flake size as a function of growth parameters that can be appliedto other transition metal dichalcogenides (TMDCs). Based on nucleation theory and Kolmogorov-Johnson-Meh-Avrami (KJMA) equation, our analytical model supports experimental data showinga critical coverage of 0.13ML above which WTe$_2$ nucleation becomes negligible. The quality ofmonolayer WTe$_2$ films is demonstrated from electronic band structure analysis using angle-resolved photoemission spectroscopy (ARPES) in agreement with first-principle calculationsperformed on free-standing WTe$_2$ and previous reports.
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Submitted 15 April, 2024;
originally announced April 2024.
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Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
T. Pierron,
C. González,
M. Sicot,
B. Kierren,
L. Moreau,
J. E. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscop…
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Epitaxial bilayer silicon oxide is a transferable two-dimensional material predicted to be a wide band gap semiconductor, with potential applications for deep UV optoelectronics, or as a building block of van der Waals heterostructures. The prerequisite to any sort of such applications is the knowledge of the electronic band structure, which we unveil using angle-resolved photoemission spectroscopy and rationalise with the help of density functional theory calculations. We discover dispersing bands related to electronic delocalisation within the top and bottom planes of the material, with two linear crossings reminiscent of those predicted in bilayer AA-stacked graphene, and semi-flat bands stemming from the chemical bridges between the two planes. This band structure is robust against exposure to air, and can be controled by exposure to oxygen. We provide an experimental lower-estimate of the band gap size of 5 eV and predict a full gap of 7.36 eV using density functional theory calculations.
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Submitted 6 May, 2021; v1 submitted 29 November, 2020;
originally announced November 2020.
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Room Temperature Spin to Charge Conversion in Amorphous Topological Insulating Gd-Alloyed BixSe1-x/CoFeB Bilayers
Authors:
Protyush Sahu,
Yifei Yang,
Yihong Fan,
Henri Jaffres,
Jun-Yang Chen,
Xavier Devaux,
Yannick Fagot-Revurat,
Sylvie Migot,
Enzo Rongione,
Sukdheep Dhillon,
Tongxin Chen,
Pambiang Abel Dainone,
Jean-Marie George,
Yuan Lu,
Jian-** Wang
Abstract:
Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two me…
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Disordered topological insulator (TI) films have gained intense interest by benefiting from both the TIs exotic transport properties and the advantage of mass production by sputtering. Here, we report on the clear evidence of spin-charge conversion (SCC) in amorphous Gd-alloyed BixSe1-x (BSG)/CoFeB bilayers fabricated by sputtering, which could be related to the amorphous TI surface states. Two methods have been employed to study SCC in BSG/CoFeB(5 nm) bilayers with different BSG thicknesses. Firstly, spin pum** is used to generate a spin current in CoFeB and to detect SCC by inverse Edelstein effect. The maximum SCC efficiency (SCE) is measured as large as 0.035 nm in a 6 nm thick BSG sample, which shows a strong decay when tBSG increases due to the increase of BSG surface roughness. The second method is the THz time-domain spectroscopy, which reveals a small tBSG dependence of SCE, validating the occurrence of a pure interface state related SCC. Furthermore, our angle-resolved photoemission spectroscopy data show dispersive two-dimensional surface states that cross the bulk gap until to the Fermi level, strengthening the possibility of SCC due to the amorphous TI states. Our studies provide a new experimental direction towards the search for topological systems in the amorphous solids.
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Submitted 30 July, 2023; v1 submitted 8 November, 2019;
originally announced November 2019.
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Electronic band structure of ultimately thin silicon oxide on Ru(0001)
Authors:
G. Kremer,
J. C. Alvarez-Quiceno,
S. Lisi,
T. Pierron,
C. González Pascual,
M. Sicot,
B. Kierren,
D. Malterre,
J. Rault,
P. Le Fèvre,
F. Bertran,
Y. J. Dappe,
J. Coraux,
P. Pochet,
Y. Fagot-Revurat
Abstract:
Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, w…
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Silicon oxide can be formed in a crystalline form, when prepared on a metallic substrate. It is a candidate support catalyst and possibly the ultimately-thin version of a dielectric host material for two-dimensional materials (2D) and heterostructures. We determine the atomic structure and chemical bonding of the ultimately thin version of the oxide, epitaxially grown on Ru(0001). In particular, we establish the existence of two sub-lattices defined by metal-oxygen-silicon bridges involving inequivalent substrate sites. We further discover four electronic bands below Fermi level, at high binding energies, two of them forming a Dirac cone at K point, and two others forming semi-flat bands. While the latter two correspond to hybridized states between the oxide and the metal, the former relate to the topmost silicon-oxygen plane, which is not directly coupled to the substrate. Our analysis is based on high resolution X-ray photoelectron spectroscopy, angle-resolved photoemission spectroscopy, scanning tunneling microscopy, and density functional theory calculations.
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Submitted 12 February, 2019;
originally announced February 2019.
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Band structure and Fermi surfaces of the reentrant ferromagnetic superconductor Eu(Fe0.86Ir0.14)2As2
Authors:
S. Xing,
J. Mansart,
V. Brouet,
M. Sicot,
Y. Fagot-Revurat,
B. Kierren,
P. Le Fèvre,
F. Bertran,
J. E. Rault,
U. B. Paramanik,
Z. Hossain,
A. Chainani,
D. Malterre
Abstract:
The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As…
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The electronic structure of the reentrant superconductor Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$ (T$_c$ = 22 K) with coexisting ferromagnetic order (T$_M$ = 18 K) is investigated using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling spectroscopy (STS). We study the in-plane and out-of-plane band dispersions and Fermi surface (FS) of Eu(Fe$_{0.86}$Ir$_{0.14}$)$_{2}$As$_{2}$. The near E$_F$ Fe 3d-derived band dispersions near the $Γ$ and X high-symmetry points show changes due to Ir substitution, but the FS topology is preserved. From momentum dependent measurements of the superconducting gap measured at T = 5 K, we estimate an essentially isotropic s-wave gap ($Δ\sim5.25\pm 0.25$ meV), indicative of strong-coupling superconductivity with 2$Δ$/k$_{B}$T$_{c}\simeq$ 5.8. The gap gets closed at temperatures T $\geq$ 10 K, and this is attributed to the resistive phase which sets in at T$_M$ = 18 K due to the Eu$^{2+}$-derived magnetic order. The modifications of the FS with Ir substitution clearly indicates an effective hole do** with respect to the parent compound.
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Submitted 18 June, 2018;
originally announced June 2018.
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Evidence for weakly correlated oxygen holes in the highest-T$_{c}$ cuprate superconductor HgBa$_2$Ca$_2$Cu$_3$O$_{8+δ}$
Authors:
A. Chainani,
M. Sicot,
Y. Fagot-Revurat,
G. Vasseur,
J. Granet,
B. Kierren,
L. Moreau,
M. Oura,
A. Yamamoto,
Y. Tokura,
D. Malterre
Abstract:
We study the electronic structure of HgBa$_2$Ca$_2$Cu$_3$O$_{8+δ}$ (Hg1223 ; T$_{c}$ = 134 K) using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Resonant valence band PES across the O K-edge and Cu L-edge identify correlation satellites originating in O 2p and Cu 3d two-hole final states, respectively. Analyses using the experimental O 2p and Cu 3d partial density of s…
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We study the electronic structure of HgBa$_2$Ca$_2$Cu$_3$O$_{8+δ}$ (Hg1223 ; T$_{c}$ = 134 K) using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). Resonant valence band PES across the O K-edge and Cu L-edge identify correlation satellites originating in O 2p and Cu 3d two-hole final states, respectively. Analyses using the experimental O 2p and Cu 3d partial density of states show quantitatively different on-site Coulomb energy for the Cu-site (U$_{dd}$ = 6.5$\pm$0.5 eV) and O-site (U$_{pp}$ = 1.0$\pm$0.5 eV). Cu$_{2}$O$_{7}$-cluster calculations with non-local screening explain the Cu 2p core level PES and Cu L-edge XAS spectra, confirm the U$_{dd}$ and U$_{pp}$ values, and provide evidence for the Zhang-Rice singlet state in Hg1223. In contrast to other hole-doped cuprates and 3d-transition metal oxides, the present results indicate weakly correlated oxygen holes in Hg1223.
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Submitted 4 January, 2017; v1 submitted 27 December, 2016;
originally announced December 2016.
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Quasi one-Dimensional Band Dispersion and Metallization In long Range Ordered Polymeric wires
Authors:
G. Vasseur,
Y. Fagot-Revurat,
M. Sicot,
B. Kierren,
L. Moreau,
D. Malterre,
L. Cardenas,
G. Galeotti,
J. Lipton-Duffin,
F. Rosei,
M. Di Giovannantonio,
G. Contini,
P. Le Fèvre,
F. Bertran,
L. Liang,
V. Meunier,
D. F. Perepichka
Abstract:
We study the electronic structure of an ordered array of poly(para-phenylene) chains produced by surface-catalyzed dehalogenative polymerization of 1,4-dibromobenzene on copper (110). The quantization of unoccupied molecular states is measured as a function of oligomer length by scanning tunneling spectroscopy, with Fermi level crossings observed for chains longer than ten phenyl rings. Angle-reso…
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We study the electronic structure of an ordered array of poly(para-phenylene) chains produced by surface-catalyzed dehalogenative polymerization of 1,4-dibromobenzene on copper (110). The quantization of unoccupied molecular states is measured as a function of oligomer length by scanning tunneling spectroscopy, with Fermi level crossings observed for chains longer than ten phenyl rings. Angle-resolved photoelectron spectroscopy reveals a graphene-like quasi one-dimensional valence band as well as a direct gap of 1.15 eV, as the conduction band is partially filled through adsorption on the surface. Tight-binding modelling and ab initio density functional theory calculations lead to a full description of the organic band-structure, including the k dispersion, the gap size and electron charge transfer mechanisms which drive the system into metallic behaviour. Therefore the entire band structure of a carbon-based conducting wire has been fully determined. This may be taken as a fingerprint of π-conjugation of surface organic frameworks.
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Submitted 27 July, 2015;
originally announced July 2015.
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Atomic and Electronic Structure of a Rashba $p$-$n$ Junction at the BiTeI Surface
Authors:
C. Tournier-Colletta,
G. Autès,
B. Kierren,
Ph. Bugnon,
H. Berger,
Y. Fagot-Revurat,
O. V. Yazyev,
M. Grioni,
D. Malterre
Abstract:
The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic…
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The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries between domains with different surface terminations. We use scanning tunneling microscopy/spectroscopy (STM/STS) to locate such junctions and investigate their atomic and electronic properties. The Te- and I-terminated surfaces are identified owing to their distinct chemical reactivity, and an apparent height mismatch of electronic origin. The Rashba surface states are revealed in the STS spectra by the onset of a van Hove singularity at the band edge. Eventually, an electronic depletion is found on interfacial Te atoms, consistent with the formation of a space charge area in typical $p$-$n$ junctions.
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Submitted 23 January, 2014;
originally announced January 2014.
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Surface state bi-polarons formation on a triangular lattice in the sp-type alkali/Si(111) Mott insulator
Authors:
L. A. Cardenas,
Y. Fagot-Revurat,
L. Moreau,
B. Kierren,
D. Malterre
Abstract:
We report on new LEED, STM and ARPES studies of alkali/Si(111) previously established as having a Mott insulating ground state at surface. The observation of a strong temperature dependent Franck-Condon broadening of the surface band together with the novel $\sqrt{3}\times\sqrt{3}\to2(\sqrt{3}\times\sqrt{3})$ charge and lattice ordering below 270 K evidence a surface charge density wave (SCDW) i…
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We report on new LEED, STM and ARPES studies of alkali/Si(111) previously established as having a Mott insulating ground state at surface. The observation of a strong temperature dependent Franck-Condon broadening of the surface band together with the novel $\sqrt{3}\times\sqrt{3}\to2(\sqrt{3}\times\sqrt{3})$ charge and lattice ordering below 270 K evidence a surface charge density wave (SCDW) in the strong e-ph coupling limit ($g\approx8$). Both the adiabatic ratio $\hbarω_0/t\approx0.8$ and the effective pairing energy $V_{eff}=U-2g\hbarω_0\approx-800$ $meV$ are consistent with the possible formation of a bi-polaronic insulating phase consisting of alternating doubly-occupied/unoccupied dangling bonds as expected in the Holstein-Hubbard model.
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Submitted 9 July, 2009;
originally announced July 2009.
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Anomalous spectral weight in photoemission spectra of the hole doped Haldane chain Y2-xSrxBaNiO5
Authors:
Y. Fagot-Revurat,
D. Malterre,
F. X. Lannuzel,
E. Janod,
C. Payen,
L. Gavioli,
F. Bertran
Abstract:
In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation states (d type). Hole do** in this system leads to a significant increase in the spectral weight at the top of the valence band without any change in the vi…
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In this paper, we present photoemission experiments on the hole doped Haldane chain compound $Y_{2-x}Sr_xBaNiO_5$. By using the photon energy dependence of the photoemission cross section, we identified the symmetry of the first ionisation states (d type). Hole do** in this system leads to a significant increase in the spectral weight at the top of the valence band without any change in the vicinity of the Fermi energy. This behavior, not observed in other charge transfer oxides at low do** level, could result from the inhomogeneous character of the doped system and from a Ni 3d-O 2p hybridization enhancement due to the shortening of the relevant Ni-O distance in the localized hole-doped regions.
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Submitted 27 November, 2002;
originally announced November 2002.
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Charge Order Driven spin-Peierls Transition in NaV2O5
Authors:
Y. Fagot-Revurat,
M. Mehring,
R. K. Kremer
Abstract:
We conclude from 23Na and 51V NMR measurements in NaxV2O5(x=0.996) a charge ordering transition starting at T=37 K and preceding the lattice distortion and the formation of a spin gap Delta=106 K at Tc=34.7 K. Above Tc, only a single Na site is observed in agreement with the Pmmn space group of this first 1/4-filled ladder system. Below Tc=34.7 K, this line evolves into eight distinct 23Na quadr…
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We conclude from 23Na and 51V NMR measurements in NaxV2O5(x=0.996) a charge ordering transition starting at T=37 K and preceding the lattice distortion and the formation of a spin gap Delta=106 K at Tc=34.7 K. Above Tc, only a single Na site is observed in agreement with the Pmmn space group of this first 1/4-filled ladder system. Below Tc=34.7 K, this line evolves into eight distinct 23Na quadrupolar split lines, which evidences a lattice distortion with, at least, a doubling of the unit cell in the (a,b) plane. A model for this unique transition implying both charge density wave and spin-Peierls order is discussed.
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Submitted 21 July, 1999;
originally announced July 1999.
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Zero Temperature Phase Transition in Spin-ladders: Phase Diagram and Dynamical studies of Cu(Hp)Cl
Authors:
G. Chaboussant,
M. -H. Julien,
Y. Fagot-Revurat,
M. E. Hanson,
L. P. Levy,
C. Berthier,
M. Horvatic,
O. Piovesana
Abstract:
In a magnetic field, spin-ladders undergo two zero-temperature phase transitions at the critical fields Hc1 and Hc2. An experimental review of static and dynamical properties of spin-ladders close to these critical points is presented. The scaling functions, universal to all quantum critical points in one-dimension, are extracted from (a) the thermodynamic quantities (magnetization) and (b) the…
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In a magnetic field, spin-ladders undergo two zero-temperature phase transitions at the critical fields Hc1 and Hc2. An experimental review of static and dynamical properties of spin-ladders close to these critical points is presented. The scaling functions, universal to all quantum critical points in one-dimension, are extracted from (a) the thermodynamic quantities (magnetization) and (b) the dynamical functions (NMR relaxation). A simple map** of strongly coupled spin ladders in a magnetic field on the exactly solvable XXZ model enables to make detailed fits and gives an overall understanding of a broad class of quantum magnets in their gapless phase (between Hc1 and Hc2). In this phase, the low temperature divergence of the NMR relaxation demonstrates its Luttinger liquid nature as well as the novel quantum critical regime at higher temperature. The general behaviour close these quantum critical points can be tied to known models of quantum magnetism.
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Submitted 6 November, 1998; v1 submitted 5 November, 1998;
originally announced November 1998.
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NMR study of the S=1/2 Heisenberg Ladder Cu2(C5H12N2)2Cl4 : Quantum phase transition and critical dynamics
Authors:
G. Chaboussant,
Y. Fagot-Revurat,
M. -H. Julien,
M. E. Hanson,
C. Berthier,
M. Horvatic,
L. P. Levy,
O. Piovesana
Abstract:
We present an extensive NMR study of the spin-1/2 antiferromagnetic Heisenberg ladder Cu2(C5H12N2)2Cl4 in a magnetic field range 4.5 - 16.7 T. By measuring the proton NMR relaxation rate 1/T_1 and varying the magnetic field around the critical field H_c1 = Delta / gμ_B = 7.5 T, we have studied the transition from a gapped spin liquid ground state to a gapless magnetic regime which can be describ…
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We present an extensive NMR study of the spin-1/2 antiferromagnetic Heisenberg ladder Cu2(C5H12N2)2Cl4 in a magnetic field range 4.5 - 16.7 T. By measuring the proton NMR relaxation rate 1/T_1 and varying the magnetic field around the critical field H_c1 = Delta / gμ_B = 7.5 T, we have studied the transition from a gapped spin liquid ground state to a gapless magnetic regime which can be described as a Luttinger liquid. We identify an intermediate regime T > |H-H_c1|, where the spin dynamics is (possibly) only controlled by the T=0 critical point H_c1.
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Submitted 13 November, 1997;
originally announced November 1997.
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Identification of Nuclear Relaxation Processes in a Gapped Quantum Magnet: Proton NMR in the S=1/2 Heisenberg Ladder Cu2(C5H12N2)2Cl4
Authors:
G. Chaboussant,
M. -H. Julien,
Y. Fagot-Revurat,
L. P. Levy,
C. Berthier,
M. Horvatic,
O. Piovesana
Abstract:
The proton hyperfine shift K and NMR relaxation rate $1/T_1$ have been measured as a function of temperature in the S=1/2 Heisenberg antiferromagnetic ladder Cu2(C5H12N2)2Cl4. The presence of a spin gap $Δ\simeq J_\perp-J_\parallel$ in this strongly coupled ladder ($J_\parallel < J_\perp$) is supported by the K and $1/T_1$ results. By comparing $1/T_1$ at two different proton sites, we infer the…
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The proton hyperfine shift K and NMR relaxation rate $1/T_1$ have been measured as a function of temperature in the S=1/2 Heisenberg antiferromagnetic ladder Cu2(C5H12N2)2Cl4. The presence of a spin gap $Δ\simeq J_\perp-J_\parallel$ in this strongly coupled ladder ($J_\parallel < J_\perp$) is supported by the K and $1/T_1$ results. By comparing $1/T_1$ at two different proton sites, we infer the evolution of the spectral functions $S_z(q,ω_n)$ and $S_\perp(q,ω_n)$. When the gap is significantly reduced by the magnetic field, two different channels of nuclear relaxation, specific to gapped antiferromagnets, are identified and are in agreement with theoretical predictions.
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Submitted 13 June, 1997;
originally announced June 1997.
