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Growth-related formation mechanism of I$_3$-type basal stacking fault in epitaxially grown hexagonal Ge-2H
Authors:
Laetitia Vincent,
Elham M. T. Fadaly,
Charles Renard,
Wouter H. J. Peeters,
Marco Vettori,
Federico Panciera,
Daniel Bouchier,
Erik PA. M Bakkers,
Marcel A. Verheijen
Abstract:
The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on gr…
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The hexagonal-2H crystal phase of Ge recently emerged as a promising direct bandgap semiconductor in the mid-infrared range providing new prospects of additional optoelectronic functionalities of group-IV semiconductors (Ge and SiGe). The controlled synthesis of such hexagonal (2H) Ge phase is a challenge that can be overcome by using wurtzite GaAs nanowires as a template. However, depending on growth conditions, unusual basal stacking faults (BSFs) of I$_3$-type are formed in the metastable 2H structure. The growth of such core/shell heterostructures is observed in situ and in real-time by means of environmental transmission electron microscopy using chemical vapour deposition. The observations provide direct evidence of a step-flow growth of Ge-2H epilayers and reveal the growth-related formation of I$_3$-BSF during unstable growth. Their formation conditions are dynamically investigated. Through these in situ observations, we can propose a scenario for the nucleation of I$_3$-type BSFs that is likely valid for any metastable hexagonal 2H or wurtzite structures grown on m-plane substrates. Conditions are identified to avoid their formation for perfect crystalline synthesis of SiGe-2H.
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Submitted 6 January, 2022;
originally announced January 2022.
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Probing Lattice Dynamics and Electronic Resonances in Hexagonal Ge and SixGe1-x Alloys in Nanowires by Raman Spectroscopy
Authors:
Diego de Matteis,
Marta De Luca,
Elham M. T. Fadaly,
Marcel A. Verheijen,
Miquel Lopez-Suarez,
Riccardo Rurali,
Erik P. A. M. Bakkers,
Ilaria Zardo
Abstract:
Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the reali…
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Recent advances in nanowire synthesis have enabled the realization of crystal phases that in bulk are attainable only under extreme conditions, i.e. high temperature and/or high pressure. For group IV semiconductors this means access to hexagonal-phase SixGe1-x nanostructures (with a 2H type of symmetry), which are predicted to have a direct band gap for x up to 0.5 - 0.6 and would allow the realization of easily processable optoelectronic devices. Exploiting the quasi-perfect lattice matching between GaAs and Ge, we synthesized hexagonal phase GaAs-Ge and GaAs-SixGe1-x core-shell nanowires with x up to 0.59. By combining position-, polarization- and excitation wavelength-dependent u-Raman spectroscopy studies with first-principles calculations, we explore the full lattice dynamics of these materials. In particular, by obtaining frequency-composition calibration curves for the phonon modes, investigating the dependence of the phononic modes on the position along the nanowire, and exploiting resonant Raman conditions to unveil the coupling between lattice vibrations and electronic transitions, we lay the grounds for a deep understanding of the phononic properties of 2H-SixGe1-x nanostructured alloys and of their relationship with crystal quality, chemical composition, and electronic band structure.
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Submitted 20 January, 2021;
originally announced January 2021.
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Direct Bandgap Emission from Hexagonal Ge and SiGe Alloys
Authors:
E. M. T. Fadaly,
A. Dijkstra,
J. R. Suckert,
D. Ziss,
M. A. J. v. Tilburg,
C. Mao,
Y. Ren,
V. T. v. Lange,
S. Kölling,
M. A. Verheijen,
D. Busse,
C. Rödl,
J. Furthmüller,
F. Bechstedt,
J. Stangl,
J. J. Finley,
S. Botti,
J. E. M. Haverkort,
E. P. A. M. Bakkers
Abstract:
Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades…
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Silicon crystallized in the usual cubic (diamond) lattice structure has dominated the electronics industry for more than half a century. However, cubic silicon (Si), germanium (Ge) and SiGe-alloys are all indirect bandgap semiconductors that cannot emit light efficiently. Accordingly, achieving efficient light emission from group-IV materials has been a holy grail in silicon technology for decades and, despite tremendous efforts, it has remained elusive. Here, we demonstrate efficient light emission from direct bandgap hexagonal Ge and SiGe alloys. We measure a subnanosecond, temperature-insensitive radiative recombination lifetime and observe a similar emission yield to direct bandgap III-V semiconductors. Moreover, we demonstrate how by controlling the composition of the hexagonal SiGe alloy, the emission wavelength can be continuously tuned in a broad range, while preserving a direct bandgap. Our experimental findings are shown to be in excellent quantitative agreement with the ab initio theory. Hexagonal SiGe embodies an ideal material system to fully unite electronic and optoelectronic functionalities on a single chip, opening the way towards novel device concepts and information processing technologies.
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Submitted 2 November, 2019;
originally announced November 2019.
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Observation of Conductance Quantization in InSb Nanowire Networks
Authors:
Elham M. T. Fadaly,
Hao Zhang,
Sonia Conesa-Boj,
Diana Car,
Önder Gül,
Sébastien R. Plissard,
Roy L. M. Op het Veld,
Sebastian Kölling,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a…
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Majorana Zero Modes (MZMs) are prime candidates for robust topological quantum bits, holding a great promise for quantum computing. Semiconducting nanowires with strong spin orbit coupling offers a promising platform to harness one-dimensional electron transport for Majorana physics. Demonstrating the topological nature of MZMs relies on braiding, accomplished by moving MZMs around each other in a certain sequence. Most of the proposed Majorana braiding circuits require nanowire networks with minimal disorder. Here, the electronic transport across a junction between two merged InSb nanowires is studied to investigate how disordered these nanowire networks are. Conductance quantization plateaus are observed in all contact pairs of the epitaxial InSb nanowire networks; the hallmark of ballistic transport behavior.
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Submitted 12 July, 2021; v1 submitted 15 March, 2017;
originally announced March 2017.
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InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices
Authors:
Diana Car,
Sonia Conesa-Boj,
Hao Zhang,
Roy L. M. Op het Veld,
Michiel W. A. de Moor,
Elham M. T. Fadaly,
Önder Gül,
Sebastian Kölling,
Sebastien R. Plissard,
Vigdis Toresen,
Michael T. Wimmer,
Kenji Watanabe,
Takashi Taniguchi,
Leo P. Kouwenhoven,
Erik P. A. M. Bakkers
Abstract:
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and…
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Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB)-fits to the experimental I-V traces.
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Submitted 12 July, 2021; v1 submitted 17 November, 2016;
originally announced November 2016.
