Showing 1–50 of 131 results for author: Führer, M

Reactivity of ultra-thin Kagome Metal FeSn towards Oxygen and Water

Authors: James Blyth, Sadhana Sridhar, Mengting Zhao, Sajid Ali2, Thi Hai Yen Vu, Qile Li, Johnathon Maniatis, Grace Causer, Michael S. Fuhrer, Nikhil V. Medhekar, Anton Tadich, Mark Edmonds

Abstract: The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is cr… ▽ More The kagome metal FeSn, consists of alternating layers of kagome-lattice Fe3Sn and honeycomb Sn2, and exhibits great potential for applications in future low energy electronics and spintronics because of an ideal combination of novel topological phases and high-temperature magnetic ordering. Robust synthesis methods for ultra-thin FeSn films, as well as an understanding of their air stability is crucial for its development and long-term operation in future devices. In this work, we realize large area, sub-10 nm epitaxial FeSn thin films, and explore the oxidation process via synchrotron-based photoelectron spectroscopy using in-situ oxygen and water dosing, as well as ex-situ air exposure. Upon exposure to atmosphere the FeSn films are shown to be highly reactive, with a stable ~3 nm thick oxide layer forming at the surface within 10 minutes. Notably the surface Fe remains largely unoxidized when compared to Sn, which undergoes near-complete oxidation. This is further confirmed with controlled in-situ dosing of O2 and H2O where only the Sn2 (stanene) inter-layers within the FeSn lattice oxidize, suggesting the Fe3Sn kagome layers remain almost pristine. These results are in excellent agreement with first principles calculations, which show Fe-O bonds to the Fe3Sn layer are energetically unfavorable, and furthermore, a large formation energy preference of 1.37 eV for Sn-O bonds in the stanene Sn2 layer over Sn-O bonds in the kagome Fe3Sn layer. The demonstration that oxidation only occurs within the stanene layers may provide new avenues in how to engineer, handle and prepare future kagome metal devices. △ Less

Submitted 9 July, 2024; originally announced July 2024.

Comments: 21 pages, 5 figures, 4 SI figures

2024 roadmap on 2D topological insulators

Authors: Bent Weber, Michael S Fuhrer, Xian-Lei Sheng, Shengyuan A Yang, Ronny Thomale, Saquib Shamim, Laurens W Molenkamp, David Cobden, Dmytro Pesin, Harold J W Zandvliet, Pantelis Bampoulis, Ralph Claessen, Fabian R Menges, Johannes Gooth, Claudia Felser, Chandra Shekhar, Anton Tadich, Mengting Zhao, Mark T Edmonds, Junxiang Jia, Maciej Bieniek, Jukka I Väyrynen, Dimitrie Culcer, Bhaskaran Muralidharan, Muhammad Nadeem

Abstract: 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first disc… ▽ More 2D topological insulators promise novel approaches towards electronic, spintronic, and quantum device applications. This is owing to unique features of their electronic band structure, in which bulk-boundary correspondences enforces the existence of 1D spin-momentum locked metallic edge states - both helical and chiral - surrounding an electrically insulating bulk. Forty years since the first discoveries of topological phases in condensed matter, the abstract concept of band topology has sprung into realization with several materials now available in which sizable bulk energy gaps - up to a few hundred meV - promise to enable topology for applications even at room-temperature. Further, the possibility of combining 2D TIs in heterostructures with functional materials such as multiferroics, ferromagnets, and superconductors, vastly extends the range of applicability beyond their intrinsic properties. While 2D TIs remain a unique testbed for questions of fundamental condensed matter physics, proposals seek to control the topologically protected bulk or boundary states electrically, or even induce topological phase transitions to engender switching functionality. Induction of superconducting pairing in 2D TIs strives to realize non-Abelian quasiparticles, promising avenues towards fault-tolerant topological quantum computing. This roadmap aims to present a status update of the field, reviewing recent advances and remaining challenges in theoretical understanding, materials synthesis, physical characterization and, ultimately, device perspectives. △ Less

Submitted 20 June, 2024; originally announced June 2024.

Possible Excitonic Insulating Phase in Quantum-Confined Sb Nanoflakes

Authors: Zhi Li, Muhammad Nadeem, Zengji Yue, David Cortie, Michael Fuhrer, Xiaolin Wang

Abstract: In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show th… ▽ More In the 1960s, it was proposed that in small indirect band-gap materials, excitons can spontaneously form because the density of carriers is too low to screen the attractive Coulomb interaction between electrons and holes. The result is a novel strongly interacting insulating phase known as an excitonic insulator. Here we employ scanning tunnelling microscopy (STM) and spectroscopy (STS) to show that the enhanced Coulomb interaction in quantum-confined elemental Sb nanoflakes drives the system to the excitonic insulator state. The unique feature of the excitonic insulator, a charge density wave (CDW) without periodic lattice distortion, is directly observed. Furthermore, STS shows a gap induced by the CDW near the Fermi surface. Our observations suggest that the Sb(110) nanoflake is an excitonic insulator. △ Less

Submitted 29 May, 2024; originally announced May 2024.

Journal ref: Nano Lett. 2019

Imaging topological polar structures in marginally twisted 2D semiconductors

Authors: Thi-Hai-Yen Vu, Daniel Bennett, Gayani Nadeera Pallewella, Md Hemayet Uddin, Kaijian Xing, Weiyao Zhao, Seng Huat Lee, Zhiqiang Mao, Jack B. Muir, Linnan Jia, Jeffrey A. Davis, Kenji Watanabe, Takashi Taniguchi, Shaffique Adam, Pankaj Sharma, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-o… ▽ More Moire superlattices formed in van der Waals heterostructures due to twisting, lattice mismatch and strain present an opportunity for creating novel metamaterials with unique properties not present in the individual layers themselves. Ferroelectricity for example, arises due to broken inversion symmetry in twisted and strained bilayers of 2D semiconductors with stacking domains of alternating out-of-plane polarization. However, understanding the individual contributions of twist and strain to the formation of topological polar nanostructures remains to be established and has proven to be experimentally challenging. Inversion symmetry breaking has been predicted to give rise to an in-plane component of polarization along the domain walls, leading to the formation of a network of topologically non-trivial merons (half-skyrmions) that are Bloch-type for twisted and Neel-type for strained systems. Here we utilise angle-resolved, high-resolution vector piezoresponse force microscopy (PFM) to spatially resolve polarization components and topological polar nanostructures in marginally twisted bilayer WSe2, and provide experimental proof for the existence of topologically non-trivial meron/antimeron structures. We observe both Bloch-type and Neel-type merons, allowing us to differentiate between moire superlattices formed due to twist or heterogeneous strain. This first demonstration of non-trivial real-space topology in a twisted van der Waals heterostructure opens pathways for exploring the connection between twist and topology in engineered nano-devices. △ Less

Submitted 23 May, 2024; originally announced May 2024.

Pick-and-place transfer of arbitrary-metal electrodes for van der Waals device fabrication

Authors: Kaijian Xing, Daniel McEwen, Weiyao Zhao, Abdulhakim Bake, David Cortie, **gying Liu, Thi-Hai-Yen Vu, James Hone, Alastair Stacey, Mark T. Edmonds, Kenji Watanabe, Takashi Taniguchi, Qingdong Ou, Dong-Chen Qi, Michael S. Fuhrer

Abstract: Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place tran… ▽ More Van der Waals electrode integration is a promising strategy to create near-perfect interfaces between metals and two-dimensional materials, with advantages such as eliminating Fermi-level pinning and reducing contact resistance. However, the lack of a simple, generalizable pick-and-place transfer technology has greatly hampered the wide use of this technique. We demonstrate the pick-and-place transfer of pre-fabricated electrodes from reusable polished hydrogenated diamond substrates without the use of any surface treatments or sacrificial layers. The technique enables transfer of large-scale arbitrary metal electrodes, as demonstrated by successful transfer of eight different elemental metals with work functions ranging from 4.22 to 5.65 eV. The mechanical transfer of metal electrodes from diamond onto van der Waals materials creates atomically smooth interfaces with no interstitial impurities or disorder, as observed with cross-sectional high-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy. As a demonstration of its device application, we use the diamond-transfer technique to create metal contacts to monolayer transition metal dichalcogenide semiconductors with high-work-function Pd, low-work-function Ti, and semi metal Bi to create n- and p-type field-effect transistors with low Schottky barrier heights. We also extend this technology to other applications such as ambipolar transistor and optoelectronics, paving the way for new device architectures and high-performance devices. △ Less

Submitted 21 May, 2024; originally announced May 2024.

Sub-100-fs formation of dark excitons in monolayer WS$_2$

Authors: Pavel V. Kolesnichenko, Lukas Wittenbecher, Qianhui Zhang, Run Yan Teh, Chandni Babu, Michael S. Fuhrer, Anders Mikkelsen, Donatas Zigmantas

Abstract: Two-dimensional semiconductors based on transition metal dichalcogenides are promising for electronics and optoelectronics applications owing to their properties governed by strongly-bound bright and dark excitons. Momentum-forbidden dark excitons have recently received attention as better alternatives to bright excitons for long-range transport. However, accessing the dynamics of dark excitons is… ▽ More Two-dimensional semiconductors based on transition metal dichalcogenides are promising for electronics and optoelectronics applications owing to their properties governed by strongly-bound bright and dark excitons. Momentum-forbidden dark excitons have recently received attention as better alternatives to bright excitons for long-range transport. However, accessing the dynamics of dark excitons is challenging experimentally. The most direct, but very complicated, experiment is transient angle-resolved photoemission electron spectroscopy: sub-100-fs formation of K-$Λ$-excitons in monolayer WS$_2$ has been identified previously taking advantage of momentum resolution of detected signals [1]. Here, we use a simpler setting of transient photoemission electron microscopy (with spatial resolution of 75 nm), which is inherently sensitive to dark K-$Λ$ excitons in monolayers of transition metal dichalcogenide and has exceptionally high temporal resolution of 13 fs. We are able to directly observe intervalley scattering (dark-exciton formation) in monolayer WS$_2$ with scattering rates in the range of 14-50 fs followed by picosecond-scale dynamics mediated by defects. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Comments: 22 pages, 3 figures, 1 supplementary

Symmetry-selective quasiparticle scattering and electric field tunability of the ZrSiS surface electronic structure

Authors: Michael S. Lodge, Elizabeth Marcellina, Ziming Zhu, Xiao-** Li, Dariusz Kaczorowski, Michael S. Fuhrer, Shengyuan A. Yang, Bent Weber

Abstract: 3D Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X=Si, Ge; Y=S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry ei… ▽ More 3D Dirac semimetals with square-net non-symmorphic symmetry, such as ternary ZrXY (X=Si, Ge; Y=S, Se, Te) compounds, have attracted significant attention owing to the presence of topological nodal lines, loops, or networks in their bulk. Orbital symmetry plays a profound role such materials as the different branches of the nodal dispersion can be distinguished by their distinct orbital symmetry eigenvalues. The presence of different eigenvalues suggests that scattering between states of different orbital symmetry may be strongly suppressed. Indeed, in ZrSiS, there has been no clear experimental evidence of quasiparticle scattering between states of different symmetry eigenvalue has been reported at small wave vector $q$. Here we show, using quasiparticle interference (QPI), that atomic step-edges in the ZrSiS surface facilitate quasiparticle scattering between states of different symmetry eigenvalues. This symmetry eigenvalue mixing quasiparticle scattering is the first to be reported for ZrSiS and contrasts quasiparticle scattering with no mixing of symmetry eigenvalues, where the latter occurs with scatterers preserving the glide mirror symmetry of the crystal lattice, e.g., native point defects in ZrSiS. Finally, we show that the electronic structure of the ZrSiS surface, including its unique floating band surface state (FBSS), can be tuned by a vertical electric field locally applied by the tip of a scanning tunneling microscope (STM), enabling control of a spin-orbit induced avoided crossing near the Fermi level by as much as 300%. △ Less

Submitted 2 February, 2024; originally announced February 2024.

Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, John Riley, Eric Huwald, Kevin M. Daniels, Rachael L. Myers-Ward, Mark T. Edmonds, Nikhil Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin… ▽ More We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface. △ Less

Submitted 4 November, 2023; originally announced November 2023.

Comments: 14 pages, 3 figures

Floquet engineering in the presence of optically excited carriers

Authors: Mitchell A. Conway, Jonathan O. Tollerud, Thi-Hai-Yen Vu, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still be… ▽ More Floquet engineering provides an optical means to manipulate electronic bandstructures, however, carriers excited by the pump field can lead to an effective heating, and can obscure measurement of the band changes. A recent demonstration of the effects of Floquet engineering on a coherent ensemble of excitons in monolayer WS$_2$ proved particularly sensitive to non-adiabatic effects, while still being able to accurately resolve bandstructure changes. Here, we drive an AC-Stark effect in monolayer WS$_2$ using pulses with constant fluence but varying pulse duration (from 25-235~fs). With shorter pump pulses, the corresponding increase in peak intensity introduces additional carriers via two-photon absorption, leading to additional decoherence and peak broadening (which makes it difficult to resolve the AC-Stark shift). We use multidimensional coherent spectroscopy to create a coherent ensemble of excitons in monolayer WS$_2$ and measure the evolution of the coherence throughout the duration of the Floquet pump pulse. Changes to the amplitude of the macroscopic coherence quantifies the additional broadening. At the same time, the evolution of the average phase allows the instantaneous changes to the bandstructure to be quantified, and is not impacted by the additional broadening. This approach to measuring the evolution of Floquet-Bloch states demonstrates a means to quantify effective heating and non-adiabaticity caused by excited carriers, while at the same time resolving the coherent evolution of the bandstructure. △ Less

Submitted 1 November, 2023; originally announced November 2023.

Journal ref: Physical Review B 109, 104302 (2024)

Non-Drude THz conductivity of graphene due to structural distortions

Authors: Tan-Phat Nguyen, Mykhailo Klymenko, Gary Beane, Mitko Oldfield, Kaijian Xing, Matthew Gebert, Semonti Bhattacharyya, Michael S. Fuhrer, Jared H. Cole, Agustin Schiffrin

Abstract: The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a wide frequency range is required for the development of such technologies. In this study, we use terahertz (THz) time-domain spectroscopy to measure the comple… ▽ More The remarkable electrical, optical and mechanical properties of graphene make it a desirable material for electronics, optoelectronics and quantum applications. A fundamental understanding of the electrical conductivity of graphene across a wide frequency range is required for the development of such technologies. In this study, we use terahertz (THz) time-domain spectroscopy to measure the complex dynamic conductivity of electrostatically gated graphene, in a broad $\sim$0.1 - 7 THz frequency range. The conductivity of doped graphene follows the conventional Drude model, and is predominantly governed by intraband processes. In contrast, undoped charge-neutral graphene exhibits a THz conductivity that significantly deviates from Drude-type models. Via quantum kinetic equations and density matrix theory, we show that this discrepancy can be explained by additional interband processes, that can be exacerbated by electron backscattering. We propose a mechanism where such backscattering -- which involves flip** of the electron pseudo-spin -- is mediated by the substantial vector scattering potentials that are associated with structural deformations of graphene. Our findings highlight the significant impact that structural distortions and resulting electrostatic vector scattering potentials can have on the THz conductivity of charge-neutral graphene. Our results emphasise the importance of the planar morphology of graphene for its broadband THz electronic response. △ Less

Submitted 9 October, 2023; originally announced October 2023.

Comments: 74 pages, 21 figures

Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation

Authors: Qianhui Zhang, Jianfeng Lu, Ziyu Wang, Zhigao Dai, Yupeng Zhang, Fuzhi Huang, Qiaoliang Bao, Wenhui Duan, Michael S. Fuhrer, Changxi Zheng

Abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique widely used for the synthesis of large-area TMDs. However, due to high sensitivity to the growth environment, reliable synthesis of monolayer TMDs via CVD remain… ▽ More Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique widely used for the synthesis of large-area TMDs. However, due to high sensitivity to the growth environment, reliable synthesis of monolayer TMDs via CVD remains challenging. Here we develop a controllable CVD process for large-area synthesis of monolayer WS2 crystals, films, and in-plane graphene-WS2 heterostructures by cleaning the reaction tube with hydrochloric acid, sulfuric acid and aqua regia. The concise cleaning process can remove the residual contaminates attached to the CVD reaction tube and crucibles, reducing the nucleation density but enhancing the diffusion length of WS2 species. The photoluminescence (PL) map**s of a WS2 single crystal and film reveal that the extraordinary PL around the edges of a triangular single crystal is induced by ambient water intercalation at the WS2-sapphire interface. The extraordinary PL can be controlled by the choice of substrates with different wettabilities. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Journal ref: Advanced Optical Materials, 6(12), p.1701347 (2018)

A volatile polymer stamp for large-scale, etching-free, and ultraclean transfer and assembly of two-dimensional materials and its heterostructures

Authors: Zhigao Dai, Yupeng Wang, Lu Liu, Junkai Deng, Wen-Xin Tang, Qingdong Ou, Ziyu Wang, Md Hemayet Uddin, Guangyuan Si, Qianhui Zhang, Wenhui Duan, Michael S. Fuhrer, Changxi Zheng

Abstract: The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stam** (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS techn… ▽ More The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stam** (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS technique is the use of volatile polyphthalaldehyde (PPA) together with hydrophobic polystyrene (PS). While PS enables the direct delamination of 2D materials from hydrophilic substrates owing to water intercalation, PPA can protect 2D materials from solution attack and maintain their integrity during PS removal. Thereafter, PPA can be completely removed by thermal annealing at 180 °C. The proposed VPS technique overcomes the limitations of currently used transfer techniques, such as chemical etching during the delamination stage, solution tearing during cleaning, and contamination from polymer residues. △ Less

Submitted 31 July, 2023; originally announced July 2023.

Journal ref: Materials Today Physics, 27, p.100834 (2022)

Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)

Authors: Jimmy C. Kotsakidis, Marc Currie, Antonija Grubišić-Čabo, Anton Tadich, Rachael L. Myers-Ward, Matthew DeJarld, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Amadeo L. Vázquez de Parga, Michael S. Fuhrer, D. Kurt Gaskill

Abstract: Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by las… ▽ More Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by laser patterning (ablating) the graphene to form micron-sized discontinuities. We then use low energy electron diffraction to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, we find that the intercalation rate increase for the patterned sample is 4.5$\pm$1.7. Since the edge length of the patterned sample is $\approx$5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. Our laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures. △ Less

Submitted 27 July, 2023; originally announced July 2023.

Comments: 24 pages, 4 figures

Journal ref: Advanced Materials Interfaces 8.23 (2021): 2101598

Observation of large intrinsic anomalous Hall conductivity in polycrystalline Mn$_3$Sn films

Authors: W. AfzaL, Z. Yue, Z. Li, M. Fuhrer, X. Wang

Abstract: We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($Ω$cm)$^{-1}$ at 3K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment in this material. The longitudinal resistivity decreases sufficiently for the thin films as comp… ▽ More We report the observation of anomalous Hall effect in Mn$_3$Sn polycrystalline thin films deposited on Pt coated Al$_2$O$_3$ substrate with a large anomalous Hall conductivity of 65($Ω$cm)$^{-1}$ at 3K. The Hall and magnetic measurements show a very small hysteresis owing to a weak ferromagnetic moment in this material. The longitudinal resistivity decreases sufficiently for the thin films as compared to the polycrystalline bulk sample used as the target for the film deposition. The anomalous Hall resistivity and conductivity decreases almost linearly with the increase in the temperature. A negative magnetoresistance is observed for all the measured temperatures with the negative decrease in the magnitude with the increase in temperature. △ Less

Submitted 19 July, 2023; originally announced July 2023.

Journal ref: Journal of Physics and Chemistry of Solids Volume 161, 110489, February 2022

Magneto-transport and electronic structures in MoSi$_2$ bulks and thin films with different orientations

Authors: W. Afzal, F. Yun, Z. Li, Z. Yue, W. Zhao, L. Sang, G. Yang, Y. He, G. Peleckis, M. Fuhrer, X. Wang

Abstract: We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperature… ▽ More We report a comprehensive study of magneto-transport properties in MoSi$_2$ bulk and thin films. Textured MoSi$_2$ thin films of around 70 nm were deposited on silicon substrates with different orientations. Giant magnetoresistance of 1000% was observed in sintered bulk samples while MoSi$_2$ single crystals exhibit a magnetoresistance (MR) value of 800% at low temperatures. At the low temperatures, the MR of the textured thin films show weak anti-localization behaviour owing to the spin orbit coupling effects. Our first principle calculation show the presence of surface states in this material. The resistivity of all the MoSi$_2$ thin films is significantly low and nearly independent of the temperature, which is important for electronic devices. △ Less

Submitted 19 July, 2023; originally announced July 2023.

Journal ref: Journal of Alloys and Compounds Volume 858, 157670, 25 March 2021

Defects, band bending and ionization rings in MoS2

Authors: Iolanda Di Bernardo, James Blyth, Liam Watson, Kaijian Xing, Yi-Hsun Chen, Shao-Yu Chen, Mark T. Edmonds, Michael S. Fuhrer

Abstract: Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a comb… ▽ More Chalcogen vacancies in transition metal dichalcogenides are widely acknowledged as both donor dopants and as a source of disorder. The electronic structure of sulphur vacancies in MoS2 however is still controversial, with discrepancies in the literature pertaining to the origin of the in-gap features observed via scanning tunneling spectroscopy (STS) on single sulphur vacancies. Here we use a combination of scanning tunnelling microscopy (STM) and STS to study embedded sulphur vacancies in bulk MoS2 crystals. We observe spectroscopic features dispersing in real space and in energy, which we interpret as tip position- and bias-dependent ionization of the sulphur vacancy donor due to tip induced band bending (TIBB). The observations indicate that care must be taken in interpreting defect spectra as reflecting in-gap density of states, and may explain discrepancies in the literature. △ Less

Submitted 18 July, 2023; originally announced July 2023.

Comments: 7 pages, 5 figures

Journal ref: Journal of Physics: Condensed Matter 34 (17), 174002, 2022

Extracting unconventional spin texture in two dimensional topological crystalline insulator bismuthene via tuning bulk-edge interactions

Authors: Yuefeng Yin, Chutian Wang, Michael S. Fuhrer, Nikhil V. Medhekar

Abstract: Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topo… ▽ More Tuning the interaction between the bulk and edge states of topological materials is a powerful tool for manipulating edge transport behavior, opening up exciting opportunities for novel electronic and spintronic applications. This approach is particularly suited to topological crystalline insulators (TCI), a class of topologically nontrivial compounds that are endowed with multiple degrees of topological protection. In this study, we investigate how bulk-edge interactions can influence the edge transport in planar bismuthene, a TCI with metallic edge states protected by in-plane mirror symmetry, using first principles calculations and symmetrized Wannier tight-binding models. By exploring the impact of various perturbation effects, such as device size, substrate potentials, and applied transverse electric field, we examine the evolution of the electronic structure and edge transport in planar bismuthene. Our findings demonstrate that the TCI states of planar bismuthene can be engineered to exhibit either a gapped or conducting unconventional helical spin texture via a combination of substrate and electric field effects. Furthermore, under strong electric fields, the edge states can be stabilized through a delicate control of the bulk-edge interactions. These results open up new directions for discovering novel spin transport patterns in topological materials and provide critical insights for the fabrication of topological spintronic devices. △ Less

Submitted 17 July, 2023; v1 submitted 28 April, 2023; originally announced April 2023.

Comments: 23 pages, 8 figures

Extraordinary Bulk Insulating Behavior in the Strongly Correlated Materials FeSi and FeSb$_2$

Authors: Yun Suk Eo, Keenan Avers, Jarryd A. Horn, Hyeok Yoon, Shanta Saha, Alonso Suarez, Michael S. Fuhrer, Johnpierre Paglione

Abstract: 4$f$ electron-based topological Kondo insulators have long been researched for their potential to conduct electric current via protected surface states, while simultaneously exhibiting unusually robust insulating behavior in their interiors. To this end, we have investigated the electrical transport of the 3$d$-based correlated insulators FeSi and FeSb$_2$, which have exhibited enough similarities… ▽ More 4$f$ electron-based topological Kondo insulators have long been researched for their potential to conduct electric current via protected surface states, while simultaneously exhibiting unusually robust insulating behavior in their interiors. To this end, we have investigated the electrical transport of the 3$d$-based correlated insulators FeSi and FeSb$_2$, which have exhibited enough similarities to their $f$ electron cousins to warrant investigation. By using a double-sided Corbino disk transport geometry, we show unambiguous evidence of surface conductance in both of these Fe-based materials. In addition, by using a 4-terminal Corbino inverted resistance technique, we extract the bulk resistivity as a function of temperature. Similar to topological Kondo insulator SmB$_6$, the bulk resistivity of FeSi and FeSb$_2$ are confirmed to exponentially increase by up to 9 orders of magnitude from room temperature to the lowest accessible temperature. This demonstrates that these materials are excellent bulk insulators, providing an ideal platform for studying correlated 2D physics. △ Less

Submitted 20 February, 2023; originally announced February 2023.

Comments: 7 pages, 4 figures

Journal ref: Appl. Phys. Lett. 122, 233102 (2023)

Superconducting Diode Effect -- Fundamental Concepts, Material Aspects, and Device Prospects

Authors: Muhammad Nadeem, Michael S. Fuhrer, Xiaolin Wang

Abstract: Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting… ▽ More Superconducting diode effect, in analogy to the nonreciprocal resistive charge transport in semiconducting diode, is a nonreciprocity of dissipationless supercurrent. Such an exotic phenomenon originates from intertwining between symmetry-constrained supercurrent transport and intrinsic quantum functionalities of helical/chiral superconductors. In this article, research progress of superconducting diode effect including fundamental concepts, material aspects, device prospects, and theoretical/experimental development is reviewed. First, fundamental mechanisms to cause superconducting diode effect including simultaneous space-inversion and time-reversal symmetry breaking, magnetochiral anisotropy, interplay between spin-orbit interaction energy and the characteristic energy scale of supercurrent carriers, and finite-momentum Cooper pairing are discussed. Second, the progress of superconducting diode effect from theoretical predictions to experimental observations are reviewed. Third, interplay between various system parameters leading to superconducting diode effect with optimal performance is presented. Then, it is explicitly highlighted that nonreciprocity of supercurrent can be characterized either by current-voltage relation obtained from resistive direct-current measurements in the metal-superconductor fluctuation region ($T\approx T_c$) or by current-phase relation and nonreciprocity of superfluid inductance obtained from alternating-current measurements in the superconducting phase ($T<T_c$). Finally, insight into future directions in this active research field is provided with a perspective analysis on intertwining between band-topology and helical superconductivity, which could be useful to steer the engineering of emergent topological superconducting technologies. △ Less

Submitted 31 January, 2023; originally announced January 2023.

Comments: 26 pages, 5 figures

Effects of Floquet Engineering on the Coherent Exciton Dynamics in Monolayer WS$_2$

Authors: Mitchell A. Conway, Stuart K. Earl, Jack B. Muir, Thi-Hai-Yen Vu, Jonathan O. Tollerud, Kenji Watanabe, Takashi Taniguchi, Michael S. Fuhrer, Mark T. Edmonds, Jeffrey A. Davis

Abstract: Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driv… ▽ More Coherent optical manipulation of electronic bandstructures via Floquet Engineering is a promising means to control quantum systems on an ultrafast timescale. However, the ultrafast switching on/off of the driving field comes with questions regarding the limits of validity of the Floquet formalism, which is defined for an infinite periodic drive, and to what extent the transient changes can be driven adibatically. Experimentally addressing these questions has been difficult, in large part due to the absence of an established technique to measure coherent dynamics through the duration of the pulse. Here, using multidimensional coherent spectroscopy we explicitly excite, control, and probe a coherent superposition of excitons in the $K$ and $K^\prime$ valleys in monolayer WS$_2$. With a circularly polarized, red-detuned, pump pulse, the degeneracy of the $K$ and $K^\prime$ excitons can be lifted and the phase of the coherence rotated. We demonstrate phase rotations during the 100 fs driving pulse that exceed $π$, and show that this can be described by a combination of the AC-Stark shift of excitons in one valley and Bloch-Siegert shift of excitons in the opposite valley. Despite showing a smooth evolution of the phase that directly follows the intensity envelope of the pump pulse, the process is not perfectly adiabatic. By measuring the magnitude of the macroscopic coherence as it evolves before, during, and after the pump pulse we show that there is additional decoherence caused by power broadening in the presence of the pump. This non-adiabaticity may be a problem for many applications, such as manipulating q-bits in quantum information processing, however these measurements also suggest ways such effects can be minimised or eliminated. △ Less

Submitted 29 January, 2023; originally announced January 2023.

Journal ref: ACS Nano 17, 14545 (2023)

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$

Authors: Qile Li, Iolanda Di Bernardo, Johnathon Maniatis, Daniel McEwen, Liam Watson, Benjamin Lowe, Thi-Hai-Yen Vu, Chi Xuan Trang, **woong Hwang, Sung-Kwan Mo, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stab… ▽ More Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the Néel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realising QAH effect at higher temperatures. Here we use a scanning tunnelling microscope to directly map the size of the exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi$_2$Te$_4$. We observe long-range fluctuations of Eg,ex with values ranging between 0 (gapless) and 70 meV, uncorrelated to individual point defects. We directly image the breakdown of topological protection, showing that the chiral edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless metallic regions in the bulk. Finally, we unambiguously demonstrate that the gapless regions originate in magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. Our results indicate that overcoming magnetic disorder is key to exploiting the unique properties of QAH insulators. △ Less

Submitted 16 January, 2023; originally announced January 2023.

Visualization of Strain-Induced Landau Levels in a Graphene - Black Phosphorus Heterostructure

Authors: Thi-Hai-Yen Vu, Pin Lyu, Na Hyun Jo, Chi Xuan Trang, Qile Li, Aaron Bostwick, Chris Jozwiak, Eli Rotenberg, Jiong Lu, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseud… ▽ More Strain-induced pseudo magnetic fields offer the possibility of realizing zero magnetic field Quantum Hall effect in graphene, possibly up to room temperature, representing a promising avenue for lossless charge transport applications. Strain engineering on graphene has been achieved via random nanobubbles or artificial nanostructures on the substrate, but the highly localized and non-uniform pseudomagnetic fields can make spectroscopic probes of electronic structure difficult. Heterostructure engineering offers an alternative approach: By stacking graphene on top of another van der Waals material with large lattice mismatch at a desired twist angle, it is possible to generate large strain-induced pseudo magnetic fields uniformly over the entire heterostructure. Here, we report using nano-angle resolved photoemission spectroscopy (nano-ARPES) to probe the electronic bandstructure of a graphene/black phosphorus heterostructure (G/BP). By directly measuring the iso-energy contours of graphene and black phosphorus we determine a twist angle of 20-degrees in our heterostructure. High-resolution nano-ARPES of the graphene bands near the Fermi level reveals the emergence of flat bands located within the Dirac cone. The spacing of the flat bands is consistent with Landau level formation in graphene, and corresponds to a pseudo-field of 11.36 T. Our work provides a new way to study quantum Hall phases induced by strain in 2D materials and heterostructures. △ Less

Submitted 8 November, 2022; originally announced November 2022.

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Authors: Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer

Abstract: 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat… ▽ More 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia △ Less

Submitted 22 June, 2022; originally announced June 2022.

Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering

Authors: Matthew Gebert, Semonti Bhattacharyya, Christopher C Bounds, Nitu Syed, Torben Daeneke, Michael S Fuhrer

Abstract: We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga$_2$O$_3$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale passivated and bare graphene on SiO$_2$/Si indicate that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the t… ▽ More We demonstrate a large-area passivation layer for graphene by mechanical transfer of ultrathin amorphous Ga$_2$O$_3$ synthesized on liquid Ga metal. A comparison of temperature-dependent electrical measurements of millimetre-scale passivated and bare graphene on SiO$_2$/Si indicate that the passivated graphene maintains its high field effect mobility desirable for applications. Surprisingly, the temperature-dependent resistivity is reduced in passivated graphene over a range of temperatures below 220 K, due to the interplay of screening of the surface optical phonon modes of the SiO$_2$ by high-dielectric-constant Ga$_2$O$_3$, and the relatively high characteristic phonon frequencies of Ga$_2$O$_3$. Raman spectroscopy and electrical measurements indicate that Ga$_2$O$_3$ passivation also protects graphene from further processing such as plasma-enhanced atomic layer deposition of Al$_2$O$_3$. △ Less

Submitted 5 June, 2022; originally announced June 2022.

Comments: Journal article, 10 pages, 4 figures

Increased Phase Coherence Length in a Porous Topological Insulator

Authors: Alex Nguyen, Golrokh Akhgar, David L. Cortie, Abdulhakim Bake, Zeljko Pastuovic, Weiyao Zhao, Chang Liu, Yi-Hsun Chen, Kiyonori Suzuki, Michael S. Fuhrer, Dimitrie Culcer, Alexander R. Hamilton, Mark T. Edmonds, Julie Karel

Abstract: The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocaliza… ▽ More The surface area of Bi2Te3 thin films was increased by introducing nanoscale porosity. Temperature dependent resistivity and magnetotransport measurements were conducted both on as-grown and porous samples (23 and 70 nm). The longitudinal resistivity of the porous samples became more metallic, indicating the increased surface area resulted in transport that was more surface-like. Weak antilocalization (WAL) was present in all samples, and remarkably the phase coherence length doubled in the porous samples. This increase is likely due to the large Fermi velocity of the Dirac surface states. Our results show that the introduction of nanoporosity does not destroy the topological surface states but rather enhances them, making these nanostructured materials promising for low energy electronics, spintronics and thermoelectrics. △ Less

Submitted 21 May, 2022; originally announced May 2022.

Robust Subthermionic Topological Transistor Action via Antiferromagnetic Exchange

Authors: Sagnik Banerjee, Koustav Jana, Anirban Basak, Michael S Fuhrer, Dimitrie Culcer, Bhaskaran Muralidharan

Abstract: The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator pha… ▽ More The topological quantum field-effect transition in buckled 2D-Xenes can potentially be engineered to enable sub-thermionic transistor operation coupled with dissipationless ON-state conduction. Substantive device design strategies to harness this will necessitate delving into the physics of the quantum field effect transition between the dissipationless topological phase and the band insulator phase. Investigating workable device structures, we uncover fundamental sub-threshold limits posed by the gating mechanism that effectuates such a transition, thereby emphasizing the need for innovations on materials and device structures. Detailing the complex band translation physics related to the quantum spin Hall effect phase transition, it is shown that a gating strategy to beat the thermionic limit can be engineered at the cost of sacrificing the dissipationless ON-state conduction. It is then demonstrated that an out-of-plane antiferromagnetic exchange introduced in the material via proximity coupling can incite transitions between the quantum spin-valley Hall and the spin quantum anomalous Hall phase, which can ultimately ensure the topological robustness of the ON state while surpassing the thermionic limit. Our work thus underlines the operational criteria for building topological transistors using quantum materials that can overcome the Boltzmann's tyranny while preserving the topological robustness. △ Less

Submitted 24 February, 2022; originally announced February 2022.

Comments: 8 pages, 6 figures, supplementary material included. Comments welcome

Proposal for a Negative Capacitance Topological Quantum Field-Effect Transistor

Authors: Michael S. Fuhrer, Mark T. Edmonds, Dimitrie Culcer, Muhammad Nadeem, Xiaolin Wang, Nikhil Medhekar, Yuefeng Yin, Jared H Cole

Abstract: A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we p… ▽ More A topological quantum field effect transistor (TQFET) uses electric field to switch a material from topological insulator ("on", with conducting edge states) to a conventional insulator ("off"), and can have low subthreshold swing due to strong Rashba spin-orbit interaction. Numerous materials have been proposed, and electric field switching has been demonstrated in ultrathin Na${_3}$Bi. Here we propose a negative capacitance (NC) TQFET which uses a ferroelectric to amplify the electric field and potentially achieve very low switching voltages and energies. Materials challenges for realizing the NC-TQFET are discussed. △ Less

Submitted 13 January, 2022; originally announced January 2022.

Comments: Accepted version of paper number 38-2 presented at the 67th Annual IEEE International Electron Devices Meeting (IEDM) on 15 December 2021

Dirac-Source Diode with Sub-unity Ideality Factor

Authors: Gyuho Myeong, Wongil Shin, Seungho Kim, Hongsik Lim, Boram Kim, Taehyeok **, Kyunghwan Sung, Jihoon Park, Michael S. Fuhrer, Kenji Watanabe, Takashi Taniguchi, Fei Liu, Sungjae Cho

Abstract: An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier,… ▽ More An increase in power consumption necessitates a low-power circuit technology to extend Moore's law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (n) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS Schottky diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene. For the developed DS Schottky diode, n<1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (100000). The realisation of a DS Schottky diode paves the way for the development of low-power electronic circuits. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Comments: 28 pages, 14 figures, submitted to Nature Communications

Formation of a stable surface oxide in MnBi$_2$Te$_4$ thin films

Authors: Golrokh Akhgar, Qile Li, Iolanda Di Bernardo, Chi Xuan Trang, Chang Liu, Julie Karel, Anton Tadich, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films upon exposure to atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room temperature electrical transport and atomic force microsco… ▽ More Understanding the air-stability of MnBi$_2$Te$_4$ thin films is crucial for the development and long-term operation of electronic devices based around magnetic topological insulators. In the present work, we study MnBi$_2$Te$_4$ thin films upon exposure to atmosphere using a combination of synchrotron-based photoelectron spectroscopy, room temperature electrical transport and atomic force microscopy to determine the oxidation process. After 2 days air exposure a 2 nm thick oxide passivates the surface, corresponding to oxidation of only the top two surface layers, with the underlying layers preserved. This protective oxide layer results in samples that still exhibit metallic conduction even after several days air exposure. Furthermore, the work function decreases from 4.4 eV for pristine MnBi$_2$Te$_4$ to 4.0 eV after the formation of the oxide, along with only a small shift in the core levels indicating minimal do** as a result of air exposure. With the oxide confined to the top surface layers, and the underlying layers preserved, it may be possible to explore new avenues in how to handle, prepare and passivate future MnBi$_2$Te$_4$ devices. △ Less

Submitted 5 October, 2021; originally announced October 2021.

Journal ref: ACS Appl. Mater. Interfaces 2022, 14, 4, 6102-6108

Electrically controlled superconductor-insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes

Authors: Guolin Zheng, Cheng Tan, Zheng Chen, Maoyuan Wang, Xiangde Zhu, Sultan Albarakati, Meri Algarni, James Partridge, Lawrence Farrar, Jianhui Zhou, Wei Ning, Mingliang Tian, Michael S. Fuhrer, Lan Wang

Abstract: The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we sh… ▽ More The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A= K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that a protonic gate can largely modulate the effective disorders and carrier density in CsV3Sb5 nanoflakes, leading to significant modifications of SC, unusual charge density wave (CDW) and giant AHE. Notably, we observed a direct superconductor-insulator transition (SIT) driven by superconducting phase fluctuation due to the do**-enhanced disorders, in addition to a large suppression of CDW. Meanwhile, the carrier density modulation shifts the Fermi level across the CDW gap and gives rise to a nontrivial evolution of AHE, in line with the asymmetric density of states of CDW sub-bands near the saddle point. With the first-principles calculations, we suggest the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities accounts for the giant AHE. Our work uncovers a disorder-driven bosonic SIT, outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family. △ Less

Submitted 8 March, 2022; v1 submitted 26 September, 2021; originally announced September 2021.

Comments: 22 pages, 4 figures

Journal ref: Nature Communications 14, 678 (2023)

Unidirectional magneto-transport of linearly dispersing topological edge states

Authors: Zhanning Wang, Pankaj Bhalla, Mark Edmonds, Michael S. Fuhrer, Dimitrie Culcer

Abstract: Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a magnetic field drastically increases the mean free path and drives the system into the ballistic regime with a Landauer-Buttiker conductance. A strong non-line… ▽ More Quantum spin-Hall edges are envisaged as next-generation transistors, yet they exhibit dissipationless transport only over short distances. Here we show that in a diffusive sample, where charge puddles with odd spin cause back-scattering, a magnetic field drastically increases the mean free path and drives the system into the ballistic regime with a Landauer-Buttiker conductance. A strong non-linear non-reciprocal current emerges in the diffusive regime with opposite signs on each edge, and vanishes in the ballistic limit. We discuss its detection in state-of-the-art experiments. △ Less

Submitted 11 August, 2021; originally announced August 2021.

Comments: 4 pages, 4 figures, Accepted for publication in Phys. Rev. B Rapid Communications

Journal ref: Phys. Rev. B 104, L081406 (2021)

Optimizing Topological Switching in Confined 2D-Xene Nanoribbons via Finite-Size Effects

Authors: Muhammad Nadeem, Chao Zhang, Dimitrie Culcer, Alex R. Hamilton, Michael S. Fuhrer, Xiaolin Wang

Abstract: In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics asso… ▽ More In a blueprint for topological electronics, edge state transport in a topological insulator material can be controlled by employing a gate-induced topological quantum phase transition. Here, by studying the width dependence of electronic properties, it is inferred that zigzag-Xene nanoribbons are promising materials for topological electronics with a display of unique physical characteristics associated with the intrinsic band topology and the finite-size effects on gate-induced topological switching. First, due to intertwining with intrinsic band topology-driven energy-zero modes in the pristine case, spin-filtered chiral edge states in zigzag-Xene nanoribbons remain gapless and protected against backward scattering even with finite inter-edge overlap** in ultra-narrow ribbons, i.e., a 2D quantum spin Hall material turns into a 1D topological metal. Second, mainly due to width- and momentum-dependent tunability of the gate-induced inter-edge coupling, the threshold-voltage required for switching between gapless and gapped edge states reduces as the width decreases, without any fundamental lower bound. Third, when the width of zigzag-Xene nanoribbons is smaller than a critical limit, topological switching between edge states can be attained without bulk bandgap closing and reopening. This is primarily due to the quantum confinement effect on the bulk band spectrum which increases the nontrivial bulk bandgap with decrease in width. The existence of such protected gapless edge states and reduction in threshold-voltage accompanied by enhancement in the bulk bandgap overturns the general wisdom of utilizing narrow-gap and wide channel materials for reducing the threshold-voltage in a standard field effect transistor analysis and paves the way toward low-voltage topological devices. △ Less

Submitted 6 March, 2022; v1 submitted 26 July, 2021; originally announced July 2021.

Comments: 14 pages, 6 figures

Journal ref: Applied Physics Reviews 9, 011411 (2022)

Influence of direct deposition of dielectric materials on the optical response of monolayer WS$_2$

Authors: Tinghe Yun, Matthias Wurdack, Maciej Pieczarka, Semonti Bhattacharyya, Qingdong Ou, Christian Notthoff, Patrick Kluth, Michael S. Fuhrer, Andrew G. Truscott, Eliezer Estrecho, Elena A. Ostrovskaya

Abstract: The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD),… ▽ More The integration of two-dimensional transition metal dichalcogenide crystals (TMDCs) into a dielectric environment is critical for optoelectronic and photonic device applications. Here, we investigate the effects of direct deposition of different dielectric materials (Al$_2$O$_3$, SiO$_2$, SiN$_x$) onto atomically thin (monolayer) TMDC WS$_2$ on its optical response. Atomic layer deposition (ALD), electron beam evaporation (EBE), plasma enhanced chemical vapour deposition (PECVD), and magnetron sputtering methods of material deposition are investigated. The photoluminescence (PL) measurements reveal quenching of the excitonic emission after all deposition processes. The reduction in neutral exciton PL is linked to the increased level of charge do** and associated rise of the trion emission, and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes of excitonic emission with the increased levels of lattice disorder and defects. Overall, the EBE process results in the lowest level of do** and defect densities and preserves the spectral weight of the exciton emission in the PL, as well as the exciton oscillator strength. Encapsulation with ALD appears to cause chemical changes, which makes it distinct from all other techniques. Sputtering is revealed as the most aggressive deposition method for WS$_2$, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS$_2$, which can provide a valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices. △ Less

Submitted 20 April, 2021; originally announced April 2021.

Hybridized hyperbolic surface phonon polaritons at α-MoO3 and polar dielectric interfaces

Authors: Qing Zhang, Qingdong Ou, Guangwei Hu, **gying Liu, Zhigao Dai, Michael S. Fuhrer, Qiaoliang Bao, Cheng-Wei Qiu

Abstract: Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics due to sub-diffraction confinement with low optical losses. Though the polaritonic field confinement can be significantly improved by modifying the dielectric environment, it is challenging to break the fundamental limits in photon confinement and propagation behavior of SPhP modes. In particu… ▽ More Surface phonon polaritons (SPhPs) in polar dielectrics offer new opportunities for infrared nanophotonics due to sub-diffraction confinement with low optical losses. Though the polaritonic field confinement can be significantly improved by modifying the dielectric environment, it is challenging to break the fundamental limits in photon confinement and propagation behavior of SPhP modes. In particular, as SPhPs inherently propagate isotropically in these bulk polar dielectrics, how to collectively realize ultra-large field confinement, in-plane hyperbolicity and unidirectional propagation remains elusive. Here, we report an approach to solve the aforementioned issues of bulk polar dielectric's SPhPs at one go by constructing a heterostructural interface between biaxial van der Waals material (e.g., MoO3) and bulk polar dielectric (e.g., SiC, AlN, and GaN). Due to anisotropy-oriented mode couplings at the interface, the hybridized SPhPs with a large confinement factor (>100) show in-plane hyperbolicity that has been switched to the orthogonal direction as compared to that in natural MoO3. More interestingly, this proof of concept allows steerable, angle-dependent and unidirectional polariton excitation by suspending MoO3 on patterned SiC air cavities. Our finding exemplifies a generalizable framework to manipulate the flow of nano-light and engineer unusual polaritonic responses in many other hybrid systems consisting of van der Waals materials and bulk polar dielectrics. △ Less

Submitted 17 March, 2021; originally announced March 2021.

$c$-axis transport in UTe$_{2}$: Evidence of Three Dimensional Conductivity Component

Authors: Yun Suk Eo, Shouzheng Liu, Shanta R. Saha, Hyunsoo Kim, Sheng Ran, Jarryd A. Horn, Halyna Hodovanets, John Collini, Tristin Metz, Wesley T. Fuhrman, Andriy H. Nevidomskyy, Jonathan D. Denlinger, Nicholas P. Butch, Michael S. Fuhrer, L. Andrew Wray, Johnpierre Paglione

Abstract: We study the temperature dependence of electrical resistivity for currents directed along all crystallographic axes of the spin-triplet superconductor UTe$_{2}$. We focus particularly on an accurate determination of the resistivity along the $c$-axis ($ρ_c$) by using a generalized Montgomery technique that allows extraction of crystallographic resistivity components from a single sample. In contra… ▽ More We study the temperature dependence of electrical resistivity for currents directed along all crystallographic axes of the spin-triplet superconductor UTe$_{2}$. We focus particularly on an accurate determination of the resistivity along the $c$-axis ($ρ_c$) by using a generalized Montgomery technique that allows extraction of crystallographic resistivity components from a single sample. In contrast to expectations from the observed highly anisotropic band structure, our measurement of the absolute values of resistivities in all current directions reveals a surprisingly nearly isotropic transport behavior at temperatures above Kondo coherence, with $ρ_c \sim ρ_b \sim 2ρ_a$, that evolves to reveal qualitatively distinct behaviors on cooling. The temperature dependence of $ρ_c$ exhibits a peak at a temperature much lower than the onset of Kondo coherence observed in $ρ_a$ and $ρ_b$, consistent with features in magnetotransport and magnetization that point to a magnetic origin. A comparison to the temperature-dependent evolution of the scattering rate observed in angle-resolved photoemission spectroscopy experiments provides important insights into the underlying electronic structure necessary for building a microscopic model of superconductivity in UTe$_{2}$. △ Less

Submitted 11 August, 2022; v1 submitted 8 January, 2021; originally announced January 2021.

Journal ref: Phys. Rev. B 106, L060505, 2022

Quantum Anomalous Hall Effect in Magnetic Doped Topological Insulators and Ferromagnetic Spin-Gapless Semiconductors -- A Perspective Review

Authors: Muhammad Nadeem, Alex R. Hamilton, Michael S. Fuhrer, Xiaolin Wang

Abstract: Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief… ▽ More Quantum anomalous Hall effect, with a trademark of dissipationless chiral edge states for electronics/spintronics transport applications, can be realized in materials with large spin-orbit coupling and strong intrinsic magnetization. After Haldane seminal proposal, several models have been presented to control/enhance the spin-orbit coupling and intrinsic magnetic exchange interaction. After brief introduction of Haldane model for spineless fermions, following three fundamental quantum anomalous Hall models are discussed in this perspective review: (i) low-energy effective four band model for magnetic-doped topological insulator (Bi,Sb)2Te3 thin films, (ii) four band tight-binding model for graphene with magnetic adatoms, and (iii) two (three) band spinfull tight-binding model for ferromagnetic spin-gapless semiconductors with honeycomb (kagome) lattice where ground state is intrinsically ferromagnetic. These models cover two-dimensional Dirac materials hosting spinless, spinful and spin-degenerate Dirac points where various mass terms open a band gap and lead to quantum anomalous Hall effect. With emphasize on the topological phase transition driven by ferromagnetic exchange interaction and its interplay with spin-orbit-coupling, we discuss various symmetry constraints on the nature of mass term and the materialization of these models. We hope this study will shed light on the fundamental theoretical perspectives of quantum anomalous Hall materials. △ Less

Submitted 22 December, 2020; originally announced January 2021.

Journal ref: Small,16(42),1904322 (2020)

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

Authors: Semonti Bhattacharyya, Golrokh Akhgar, Matt Gebert, Julie Karel, Mark T Edmonds, Michael S Fuhrer

Abstract: Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electron… ▽ More Inducing long-range magnetic order in three-dimensional topological insulators can gap the Diraclike metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low-energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. In this review, we focus on one strategy, inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. We discuss the unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity-coupled magnetic order in topological insulators. We also highlight some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, and we conclude with an outlook on remaining challenges and opportunities in the field. △ Less

Submitted 21 December, 2020; originally announced December 2020.

Comments: Review article, 30 pages including references, 11 figures

Journal ref: Advanced materials , 2021, Vol.33(33), p.2170262

Overcoming Boltzmann's Tyranny in a Transistor via the Topological Quantum Field Effect

Authors: Muhammad Nadeem, Iolanda Di Bernardo, Xiaolin Wang, Michael S. Fuhrer, Dimitrie Culcer

Abstract: The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-th… ▽ More The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the device on and off, and in a conventional transistor it is limited by Boltzmann's tyranny to kTln(10)/q, or 60 mV per decade. Here, we demonstrate that the sub-threshold swing of a topological transistor, in which conduction is enabled by a topological phase transition via electric field switching, can be sizably reduced in a non-interacting system by modulating the Rashba spin-orbit interaction via a top-gate electric field. We refer to this as the Topological Quantum Field Effect and to the transistor as a Topological Quantum Field Effect transistor (TQFET). By develo** a general theoretical framework for quantum spin Hall materials with honeycomb lattices we explicitly show that the Rashba interaction can reduce the sub-threshold swing by more than 25% compared to Boltzmann's limit in currently available materials, but without any fundamental lower bound, a discovery that can guide future materials design and steer the engineering of topological quantum devices. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Comments: 14 pages, 4 figures, 1 table

Journal ref: Nano Lett. 2021, 21, 7, 3155-3161

Bulk transport paths through defects in floating zone and Al flux grown SmB$_6$

Authors: Yun Suk Eo, Alexa Rakoski, Shriya Sinha, Dmitri Mihaliov, Wesley T. Fuhrman, Shanta R. Saha, Priscila F. S. Rosa, Zachary Fisk, Monica Ciomaga Hatnean, Geetha Balakrishnan, Juan R. Chamorro, Seyed M. Koohpayeh, Tyrel M. McQueen, Boyoun Kang, Myung-suk Song, Beongki Cho, Michael S. Fuhrer, Johnpierre Paglione, Cagliyan Kurdak

Abstract: We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent res… ▽ More We investigate the roles of disorder on low-temperature transport in SmB$_6$ crystals grown by both the Al flux and floating zone methods. We used the inverted resistance method with Corbino geometry to investigate whether low-temperature variations in the standard resistance plateau arises from a surface or a bulk channel in floating zone samples. The results show significant sample-dependent residual bulk conduction, in contrast to smaller amounts of residual bulk conduction previously observed in Al flux grown samples with Sm vacancies. We consider hop** in an activated impurity band as a possible source for the observed bulk conduction, but it is unlikely that the large residual bulk conduction seen in floating zone samples is solely due to Sm vacancies. We therefore propose that one-dimensional defects, or dislocations, contribute as well. Using chemical etching, we find evidence for dislocations in both flux and floating zone samples, with higher dislocation density in floating zone samples than in Al flux grown samples. In addition to the possibility of transport through one-dimensional dislocations, we also discuss our results in the context of recent theoretical models of SmB$_6$. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 22 pages, 4 figures

Journal ref: Phys. Rev. Materials 5, 055001 (2021)

Long-lived populations of momentum- and spin-indirect excitons in monolayer WSe$_2$

Authors: Shao-Yu Chen, Maciej Pieczarka, Matthias Wurdack, Eliezer Estrecho, Takashi Taniguchi, Kenji Watanabe, Jun Yan, Elena A. Ostrovskaya, Michael S. Fuhrer

Abstract: Monolayer transition metal dichalcogenides are a promising platform to investigate many-body interactions of excitonic complexes. In monolayer tungsten diselenide, the ground-state exciton is dark (spin-indirect), and the valley degeneracy allows low-energy dark momentum-indirect excitons to form. Interactions between the dark exciton species and the optically accessible bright exciton (X) are lik… ▽ More Monolayer transition metal dichalcogenides are a promising platform to investigate many-body interactions of excitonic complexes. In monolayer tungsten diselenide, the ground-state exciton is dark (spin-indirect), and the valley degeneracy allows low-energy dark momentum-indirect excitons to form. Interactions between the dark exciton species and the optically accessible bright exciton (X) are likely to play significant roles in determining the optical properties of X at high power, as well as limiting the ultimate exciton densities that can be achieved, yet so far little is known about these interactions. Here, we demonstrate long-lived dense populations of momentum-indirect intervalley ($X_K$) and spin-indirect intravalley (D) dark excitons by time-resolved photoluminescence measurements (Tr-PL). Our results uncover an efficient inter-state conversion between X to D excitons through the spin-flip process and the one between D and $X_K$ excitons mediated by the exchange interaction (D + D to $X_K$ + $X_K$). Moreover, we observe a persistent redshift of the X exciton due to strong excitonic screening by $X_K$ exciton with a response time in the timescale of sub-ns, revealing a non-trivial inter-state exciton-exciton interaction. Our results provide a new insight into the interaction between bright and dark excitons, and point to a possibility to employ dark excitons for investigating exciton condensation and the valleytronics. △ Less

Submitted 21 September, 2020; originally announced September 2020.

Crossover from 2D ferromagnetic insulator to wide bandgap quantum anomalous Hall insulator in ultra-thin MnBi2Te4

Authors: Chi Xuan Trang, Qile Li, Yuefeng Yin, **woong Hwang, Golrokh Akhgar, Iolanda Di Bernardo, Antonija Grubišić-Čabo, Anton Tadich, Michael S. Fuhrer, Sung- Kwan Mo, Nikhil Medhekar, Mark T. Edmonds

Abstract: Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature o… ▽ More Intrinsic magnetic topological insulators offer low disorder and large magnetic bandgaps for robust magnetic topological phases operating at higher temperatures. By controlling the layer thickness, emergent phenomena such as the Quantum Anomalous Hall (QAH) effect and axion insulator phases have been realised. These observations occur at temperatures significantly lower than the Neel temperature of bulk MnBi2Te4, and measurement of the magnetic energy gap at the Dirac point in ultra-thin MnBi2Te4 has yet to be achieved. Critical to achieving the promise of this system is a direct measurement of the layer-dependent energy gap and verifying whether the gap is magnetic in the QAH phase. Here we utilise temperature dependent angle-resolved photoemission spectroscopy to study epitaxial ultra-thin MnBi2Te4. We directly observe a layer dependent crossover from a 2D ferromagnetic insulator with a bandgap greater than 780 meV in one septuple layer (1 SL) to a QAH insulator with a large energy gap (>100 meV) at 8 K in 3 and 5 SL MnBi2Te4. The QAH gap is confirmed to be magnetic in origin, as it abruptly diminishes with increasing temperature above 8 K. The direct observation of a large magnetic energy gap in the QAH phase of few-SL MnBi2Te4 is promising for further increasing the operating temperature of QAH materials. △ Less

Submitted 16 March, 2021; v1 submitted 13 September, 2020; originally announced September 2020.

Journal ref: ACS Nano 2021, 15, 8, 13444-13452

Progress in epitaxial thin-film Na3Bi as a topological electronic material

Authors: I. Di Bernardo, J. Hellerstedt, C. Liu, G. Akhgar, W. Wu, S. A. Yang, D. Culcer, S. -K. Mo, S. Adam, M. T. Edmonds, M. S. Fuhrer

Abstract: Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising to… ▽ More Na3Bi was the first experimentally verified topological Dirac semimetal (TDS), and is a 3D analogue of graphene hosting relativistic Dirac fermions. Its unconventional momentum-energy relationship is interesting from a fundamental perspective, yielding exciting physical properties such as chiral charge carriers, the chiral anomaly, and weak anti-localization. It also shows promise for realising topological electronic devices such as topological transistors. In this review, an overview of the substantial progress achieved in the last few years on Na3Bi is presented, with a focus on technologically relevant large-area thin films synthesised via molecular beam epitaxy. Key theoretical aspects underpinning the unique electronic properties of Na3Bi are introduced. Next, the growth process on different substrates is reviewed. Spectroscopic and microscopic features are illustrated, and an analysis of semi-classical and quantum transport phenomena in different do** regimes is provided. The emergent properties arising from confinement in two dimensions, including thickness-dependent and electric-field driven topological phase transitions, are addressed, with an outlook towards current challenges and expected future progress. △ Less

Submitted 1 September, 2020; originally announced September 2020.

Two-dimensional Ga$_2$O$_3$ glass: a large scale passivation and protection material for monolayer WS$_2$

Authors: Matthias Wurdack, Tinghe Yun, Eliezer Estrecho, Nitu Syed, Semonti Bhattacharyya, Maciej Pieczarka, Ali Zavabeti, Shao-Yu Chen, Benedikt Haas, Johannes Mueller, Qiaoliang Bao, Christian Schneider, Yuerui Lu, Michael S. Fuhrer, Andrew G. Truscott, Torben Daeneke, Elena A. Ostrovskaya

Abstract: Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in… ▽ More Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all-dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, we show that the novel, ultrathin Ga$_2$O$_3$ glass is an ideal centimeter-scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga$_2$O$_3$ cap** of commercial grade WS$_2$ monolayers outperforms hBN in both scalability and optical performance at room temperature. These properties make Ga$_2$O$_3$ highly suitable for large scale passivation and protection of monolayer TMDCs in functional heterostructures. △ Less

Submitted 14 July, 2020; originally announced July 2020.

Importance of interactions for the band structure of the topological Dirac semimetal Na3Bi

Authors: I. Di Bernardo, J. Collins, W. Wu, J. Zhou, S. A. Yang, S. Ju, M. T. Edmonds, M. S. Fuhrer

Abstract: We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than pr… ▽ More We experimentally measure the band dispersions of topological Dirac semimetal Na3Bi using Fourier-transform scanning tunneling spectroscopy to image quasiparticle interference on the (001) surface of molecular-beam epitaxy-grown Na3Bi thin films. We find that the velocities for the lowest-lying conduction and valencebands are 1.6x10^6 m/s and 4.2x10^5 m/s respectively, significantly higher than previous theoreticalpredictions. We compare the experimental band dispersions to the theoretical band structures calculated usingan increasing hierarchy of approximations of self-energy corrections due to interactions: generalized gradientapproximation (GGA), meta-GGA, Heyd-Scuseria-Ernzerhof exchange-correlation functional (HSE06), and GW methods. We find that density functional theory methods generally underestimate the electron velocities. However, we find significantly improved agreement with an increasingly sophisticated description of the exchange and interaction potential, culminating in reasonable agreement with experiments obtained by the GW method. The results indicate that exchange-correlation effects are important in determining the electronicstructure of this Na3Bi, and are likely the origin of the high velocity. The electron velocity is consistent withrecent experiments on ultrathin Na3Bi and also may explain the ultrahigh carrier mobility observed in heavilyelectron-doped Na3Bi. △ Less

Submitted 14 July, 2020; originally announced July 2020.

Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields

Authors: Antonija Grubišić-Čabo, Jimmy C. Kotsakidis, Yuefeng Yin, Anton Tadich, Matthew Haldon, Sean Solari, Iolanda di Bernardo, Kevin M. Daniels, John Riley, Eric Huwald, Mark T. Edmonds, Rachael Myers-Ward, Nikhil V. Medhekar, D. Kurt Gaskill, Michael S. Fuhrer

Abstract: We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesiu… ▽ More We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-do** and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type do** of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar do** level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air. △ Less

Submitted 27 August, 2020; v1 submitted 6 May, 2020; originally announced May 2020.

Comments: 46 pages including supporting information, 4 figures in the main paper and 9 figures in the supporting information

Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface

Authors: Jimmy C. Kotsakidis, Antonija Grubišić-Čabo, Yuefeng Yin, Anton Tadich, Rachael L. Myers-Ward, Matthew Dejarld, Shojan P. Pavunny, Marc Currie, Kevin M. Daniels, Chang Liu, Mark T. Edmonds, Nikhil V. Medhekar, D. Kurt Gaskill, Amadeo L. Vazquez de Parga, Michael S. Fuhrer

Abstract: The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy… ▽ More The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type do**. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable. △ Less

Submitted 13 July, 2020; v1 submitted 3 April, 2020; originally announced April 2020.

Comments: 58 pages, 10 figures, 4 tables. Revised text and figures

Quantum Transport in Air-stable Na3Bi Thin Films

Authors: Chang Liu, Golrokh Akhgar, James L. Collins, Jack Hellerstedt, Shaffique Adam, Michael S. Fuhrer, Mark T. Edmonds

Abstract: Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films pas… ▽ More Na3Bi has attracted significant interest in both bulk form as a three-dimensional topological Dirac semimetal and in ultra-thin form as a wide-bandgap two-dimensional topological insulator. Its extreme air sensitivity has limited experimental efforts on thin- and ultra-thin films grown via molecular beam epitaxy to ultra-high vacuum environments. Here we demonstrate air-stable Na3Bi thin films passivated with magnesium difluoride (MgF2) or silicon (Si) cap** layers. Electrical measurements show that deposition of MgF2 or Si has minimal impact on the transport properties of Na3Bi whilst in ultra-high vacuum. Importantly, the MgF2-passivated Na3Bi films are air-stable and remain metallic for over 100 hours after exposure to air, as compared to near instantaneous degradation when they are unpassivated. Air stability enables transfer of films to a conventional high-magnetic field cryostat, enabling quantum transport measurements which verify that the Dirac semimetal character of Na3Bi films is retained after air exposure. △ Less

Submitted 29 March, 2020; originally announced March 2020.

Journal ref: ACS Appl. Mater. Interfaces 12, 31, 35542 (2020)

Multidimensional Analysis of Excitonic Spectra of Monolayers of Tungsten Disulphide: Towards Computer Aided Identification of Structural and Environmental Perturbations of 2D Materials

Authors: Pavel V. Kolesnichenko, Qianhui Zhang, Changxi Zheng, Michael S. Fuhrer, Jeffrey A. Davis

Abstract: Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, do**, water intercalation, oxidation, edge reconst… ▽ More Despite 2D materials holding great promise for a broad range of applications, the proliferation of devices and their fulfillment of real-life demands are still far from being realized. Experimentally obtainable samples commonly experience a wide range of perturbations (ripples and wrinkles, point and line defects, grain boundaries, strain field, do**, water intercalation, oxidation, edge reconstructions) significantly deviating the properties from idealistic models. These perturbations, in general, can be entangled or occur in groups with each group forming a complex perturbation making the interpretations of observable physical properties and the disentanglement of simultaneously acting effects a highly non-trivial task even for an experienced researcher. Here we generalise statistical correlation analysis of excitonic spectra of monolayer WS2, acquired by hyperspectral absorption and photoluminescence imaging, to a multidimensional case, and examine multidimensional correlations via unsupervised machine learning algorithms. Using principle component analysis we are able to identify 4 dominant components that are correlated with tensile strain, disorder induced by adsorption or intercalation of environmental molecules, multi-layer regions and charge do**, respectively. This approach has the potential to determine the local environment of WS2 monolayers or other 2D materials from simple optical measurements, and paves the way towards advanced, machine-aided, characterisation of monolayer matter. △ Less

Submitted 28 July, 2020; v1 submitted 4 March, 2020; originally announced March 2020.

Comments: 12 pages, 4 figures, supplementary materials

Carrier transport theory for twisted bilayer graphene in the metallic regime

Authors: Gargee Sharma, Indra Yudhistira, Nilotpal Chakraborty, Derek Y. H. Ho, Michael S. Fuhrer, Giovanni Vignale, Shaffique Adam

Abstract: Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity… ▽ More Understanding the normal-metal state transport in twisted bilayer graphene near magic angle is of fundamental importance as it provides insights into the mechanisms responsible for the observed strongly correlated insulating and superconducting phases. Here we provide a rigorous theory for phonon-dominated transport in twisted bilayer graphene describing its unusual signatures in the resistivity (including the variation with electron density, temperature, and twist angle) showing good quantitative agreement with recent experiments. We contrast this with the alternative Planckian dissipation mechanism that we show is incompatible with available experimental data. An accurate treatment of the electron-phonon scattering requires us to go well beyond the usual treatment, including both interband and intraband processes, considering the finite-temperature dynamical screening of the electron-phonon matrix element, and going beyond the linear Dirac dispersion. In addition to explaining the observations in currently available experimental data, we make concrete predictions that can be tested in ongoing experiments. △ Less

Submitted 28 February, 2020; originally announced March 2020.

Comments: 25 pages, 15 figures

Journal ref: Nature Communications 12, 5737 (2021)

High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture

Authors: Fuyou Liao, Zhongxun Guo, Yin Wang, Yufeng Xie, Simeng Zhang, Yaochen Sheng, Hongwei Tang, Zihan Xu, Antoine Riaud, Peng Zhou, **g Wan, Michael S. Fuhrer, Xiangwei Jiang, David Wei Zhang, Yang Chai, Wenzhong Bao

Abstract: In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structu… ▽ More In this work, we demonstrate a dual-gated (DG) MoS2 field effect transistors (FETs) in which the degraded switching performance of multilayer MoS2 can be compensated by the DG structure. It produces large current density (>100 μA/μm for a monolayer), steep subthreshold swing (SS) (~100 mV/dec for 5 nm thickness), and high on/off current ratio (greater than 107 for 10 nm thickness). Such DG structure not only improves electrostatic control but also provides an extra degree of freedom for manipulating the threshold voltage (VTH) and SS by separately tuning the top and back gate voltages, which are demonstrated in a logic inverter. Dynamic random access memory (DRAM) has a short retention time because of large OFF-state current in the Si MOSFET. Based on our DG MoS2-FETs, and a DRAM unit cell with a long retention time of 1260 ms are realized. A large-scale isolated MoS2 DG-FETs based on CVD-synthesized continuous films is also demonstrated, which shows potential applications for future wafer-scale digital and low-power electronics. △ Less

Submitted 17 December, 2019; originally announced December 2019.