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Unified Framework for Charge-Spin Interconversion in Spin-Orbit Materials
Authors:
Shehrin Sayed,
Seokmin Hong,
Xiaoxi Huang,
Lucas Caretta,
Arnoud S. Everhardt,
Ramamoorthy Ramesh,
Sayeef Salahuddin,
Supriyo Datta
Abstract:
Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for…
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Materials with spin-orbit coupling are of great interest for various spintronics applications due to the efficient electrical generation and detection of spin-polarized electrons. Over the past decade, many materials have been studied, including topological insulators, transition metals, Kondo insulators, semimetals, semiconductors, and oxides; however, there is no unifying physical framework for understanding the physics and therefore designing a material system and devices with the desired properties. We present a model that binds together the experimental data observed on the wide variety of materials in a unified manner. We show that in a material with a given spin-momentum locking, the density of states plays a crucial role in determining the charge-spin interconversion efficiency, and a simple inverse relationship can be obtained. Remarkably, experimental data obtained over the last decade on many different materials closely follow such an inverse relationship. We further deduce two figure-of-merits of great current interest: the spin-orbit torque (SOT) efficiency (for the direct effect) and the inverse Rashba-Edelstein effect length (for the inverse effect), which statistically show good agreement with the existing experimental data on wide varieties of materials. Especially, we identify a scaling law for the SOT efficiency with respect to the carrier concentration in the sample, which agrees with existing data. Such an agreement is intriguing since our transport model includes only Fermi surface contributions and fundamentally different from the conventional views of the SOT efficiency that includes contributions from all the occupied states.
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Submitted 30 April, 2021; v1 submitted 4 October, 2020;
originally announced October 2020.
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Dynamic Tilting of Ferroelectric Domain Walls via Optically Induced Electronic Screening
Authors:
Youngjun Ahn,
Arnoud S. Everhardt,
Hyeon Jun Lee,
Joonkyu Park,
Anastasios Pateras,
Silvia Damerio,
Tao Zhou,
Anthony D. DiChiara,
Haidan Wen,
Beatriz Noheda,
Paul G. Evans
Abstract:
Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved…
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Optical excitation perturbs the balance of phenomena selecting the tilt orientation of domain walls within ferroelectric thin films. The high carrier density induced in a low-strain BaTiO3 thin film by an above-bandgap ultrafast optical pulse changes the tilt angle that 90° a/c domain walls form with respect to the substrate-film interface. The dynamics of the changes are apparent in time-resolved synchrotron x-ray scattering studies of the domain diffuse scattering. Tilting occurs at 298 K, a temperature at which the a/b and a/c domain phases coexist but is absent at 343 K in the better ordered single-phase a/c regime. Phase coexistence at 298 K leads to increased domain-wall charge density, and thus a larger screening effect than in the single-phase regime. The screening mechanism points to new directions for the manipulation of nanoscale ferroelectricity.
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Submitted 14 October, 2022; v1 submitted 15 August, 2020;
originally announced August 2020.
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BaTiO3 thin films as transitional ferrroelectrics with giant dielectric response
Authors:
A. S. Everhardt,
T. Denneulin,
A. Gruenebohm,
Y-T. Shao,
P. Ondrejkovic,
S. Zhou,
N. Domingo,
G. Catalan,
J. Hlinka,
J-M. Zuo,
S. Matzen,
B. Noheda
Abstract:
Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelect…
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Proximity to phase transitions (PTs) is frequently responsible for the largest dielectric susceptibilities in ferroelectrics. The impracticality of using temperature as a control parameter to reach those large responses has motivated the design of solid solutions with phase boundaries between different polar phases at temperatures (typically room temperature) significantly lower than the paraelectric-ferroelectric critical temperature. The flat energy landscapes close to these PTs give rise to polarization rotation under external stimuli, being responsible for the best piezoelectrics so far and a their huge market. But this approach requires complex chemistry to achieve temperature-independent PT boundaries and often involves lead-containing compounds. Here we report that such a bridging state is possible in thin films of chemically simple materials such as BaTiO3. A coexistence of tetragonal, orthorhombic and their bridging low-symmetry phases are shown to be responsible for the continuous vertical polarization rotation, recreating a smear in-transition state and leading to giant temperature-independent dielectric response. These features are distinct from those of single crystals, multi-domain crystals, ceramics or relaxor ferroelectrics, requiring a different description. We believe that other materials can be engineered in a similar way to form a class of ferroelectrics, in which MPB solid solutions are also included, that we propose to coin as transitional ferroelectrics.
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Submitted 23 July, 2019;
originally announced July 2019.
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Periodicity doubling cascades: direct observation in ferroelastic materials
Authors:
Arnoud S. Everhardt,
Silvia Damerio,
Jacob A. Zorn,
Silang Zhou,
Neus Domingo,
Gustau Catalan,
Ekhard K. H. Salje,
Long-Qing Chen,
Beatriz Noheda
Abstract:
Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multip…
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Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multiple times. The process is reversible, displaying periodicity doubling as temperature is increased. This observation is backed theoretically and can explain the fingerprints of domain period multiplicity observed in other systems, strongly suggesting this as a general model for pattern formation during phase transitions in ferroelastic materials.
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Submitted 25 January, 2019;
originally announced January 2019.
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A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films
Authors:
Yingfen Wei,
Pavan Nukala,
Mart Salverda,
Sylvia Matzen,
Hong Jian Zhao,
Jamo Momand,
Arnoud Everhardt,
Graeme R. Blake,
Philippe Lecoeur,
Bart J. Kooi,
Jorge Íñiguez,
Brahim Dkhil,
Beatriz Noheda
Abstract:
After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards t…
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After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.
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Submitted 26 January, 2018;
originally announced January 2018.
