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Competing Uniaxial Anisotropies in Epitaxial Fe Thin Films Grown on InAs(001)
Authors:
James M. Etheridge,
Joseph Dill,
Connor P. Dempsey,
Mihir Pendharkar,
Javier Garcia-Barriocanal,
Guichuan Yu,
Vlad S. Pribiag,
Paul A. Crowell,
Chris J. Palmstrøm
Abstract:
We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane…
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We report on the interplay of two uniaxial magnetic anisotropies in epitaxial Fe thin films of varying thickness grown on InAs(001) as observed in ferromagnetic resonance experiments. One anisotropy originates from the Fe/InAs interface while the other originates from in-plane shear strain resulting from the anisotropic relaxation of the Fe film. X-ray diffraction was used to measure the in-plane lattice constants of the Fe films, confirming the correlation between the onset of film relaxation and the corresponding shear strain inferred from ferromagnetic resonance data. These results are relevant for ongoing efforts to develop spintronic and quantum devices utilizing large spin-orbit coupling in III-V semiconductors.
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Submitted 23 May, 2023;
originally announced May 2023.
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First Principles Study of the Electronic Structure of the Ni$_2$MnIn/InAs and Ti$_2$MnIn/InSb interfaces
Authors:
Brett Heischmidt,
Maituo Yu,
Derek Dardzinski,
James Etheridge,
Saeed Moayedpour,
Vlad S. Pribiag,
Paul A. Crowell,
Noa Marom
Abstract:
We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in…
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We present a first-principles study of the electronic and magnetic properties of epitaxial interfaces between the Heusler compounds Ti$_2$MnIn and Ni$_2$MnIn and the III-V semiconductors, InSb and InAs, respectively. We use density functional theory (DFT) with a machine-learned Hubbard $U$ correction determined by Bayesian optimization. We evaluate these interfaces for prospective applications in Majorana-based quantum computing and spintronics. In both interfaces, states from the Heusler penetrate into the gap of the semiconductor, decaying within a few atomic layers. The magnetic interactions at the interface are weak and local in space and energy. Magnetic moments of less than 0.1 $μ_B$ are induced in the two atomic layers closest to the interface. The induced spin polarization around the Fermi level of the semiconductor also decays within a few atomic layers. The decisive factor for the induced spin polarization around the Fermi level of the semiconductor is the spin polarization around the Fermi level in the Heusler, rather than the overall magnetic moment. As a result, the ferrimagnetic narrow-gap semiconductor Ti$_2$MnIn induces a more significant spin polarization in the InSb than the ferromagnetic metal Ni$_2$MnIn induces in the InAs. This is explained by the position of the transition metal $d$ states in the Heusler with respect to the Fermi level. Based on our results, these interfaces are unlikely to be useful for Majorana devices but could be of interest for spintronics.
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Submitted 7 January, 2023; v1 submitted 28 September, 2022;
originally announced September 2022.
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Complementary ADF-STEM: a Flexible Approach to Quantitative 4D-STEM
Authors:
Bryan D Esser,
Joanne Etheridge
Abstract:
Scanning transmission electron microscopy (STEM) has a broad range of applications in materials characterization, including real-space imaging, spectroscopy, and diffraction, at length scales from the micron to sub-Ångström. The recent development and adoption of high-speed, direct electron STEM detectors has enabled diffraction patterns to be collected at each probe position, generating four-dime…
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Scanning transmission electron microscopy (STEM) has a broad range of applications in materials characterization, including real-space imaging, spectroscopy, and diffraction, at length scales from the micron to sub-Ångström. The recent development and adoption of high-speed, direct electron STEM detectors has enabled diffraction patterns to be collected at each probe position, generating four-dimensional STEM (4D-STEM) datasets and opening new imaging modalities. However, the limited pixel numbers in these detectors enforce a tradeoff between angular resolution and maximum collection angle. In this paper, we describe a straightforward method for quantifying 4D-STEM data by utilizing the full flux of the electron beam, including electrons scattered beyond the limits of the detector. This enables significantly increased experimental flexibility, including the synthesis of quantitative, high-contrast complementary annular dark field (cADF) STEM images from low-angle diffraction patterns whilst maintaining high angular resolution; as well as the optimization of electron dose and the more effective use of low dynamic range detectors.
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Submitted 3 June, 2022;
originally announced June 2022.
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An experimental approach to map** chemical bonds in nanostructured materials
Authors:
Philip N. H. Nakashima,
Ding Peng,
Xiaofen Tan,
Anna N. Mortazavi,
Tianyu Liu,
Joanne Etheridge,
Laure Bourgeois,
David R. Clarke
Abstract:
We introduce a number of techniques in quantitative convergent-beam electron diffraction under development by our group and discuss the basis for measuring interatomic electrostatic potentials (and therefore also electron densities), localised at sub-nanometre scales, with sufficient accuracy and precision to map chemical bonds in and around nanostructures in nanostructured materials. This has nev…
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We introduce a number of techniques in quantitative convergent-beam electron diffraction under development by our group and discuss the basis for measuring interatomic electrostatic potentials (and therefore also electron densities), localised at sub-nanometre scales, with sufficient accuracy and precision to map chemical bonds in and around nanostructures in nanostructured materials. This has never been possible as experimental measurements of bonding have always been restricted to homogeneous single-phased crystals.
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Submitted 22 December, 2021;
originally announced December 2021.
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A symmetry-derived mechanism for atomic resolution imaging
Authors:
Matus Krajnak,
Joanne Etheridge
Abstract:
We introduce a new image contrast mechanism for scanning transmission electron microscopy (STEM) that derives from the local symmetry within the specimen. For a given position of the electron probe on the specimen, the image intensity is determined by the degree of similarity between the exit electron intensity distribution and a chosen symmetry operation applied to that distribution. The contrast…
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We introduce a new image contrast mechanism for scanning transmission electron microscopy (STEM) that derives from the local symmetry within the specimen. For a given position of the electron probe on the specimen, the image intensity is determined by the degree of similarity between the exit electron intensity distribution and a chosen symmetry operation applied to that distribution. The contrast mechanism detects both light and heavy atomic columns and is robust with respect to specimen thickness, electron probe energy and defocus. Atomic columns appear as sharp peaks that can be significantly narrower than for STEM images using conventional disc and annular detectors. This fundamentally different contrast mechanism complements conventional imaging modes and can be acquired simultaneously with them, expanding the power of STEM for materials characterisation.
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Submitted 19 April, 2020; v1 submitted 12 March, 2019;
originally announced March 2019.
