-
Mastering disorder in a first-order transition by ion irradiation
Authors:
S. Cervera,
M. LoBue,
E. Fontana,
M. Eddrief,
V. H. Etgens,
E. Lamour,
S. Macé,
M. Marangolo,
E. Plouet,
C. Prigent,
S. Steydli,
D. Vernhet,
M. Trassinelli
Abstract:
The effect of ion bombardment on MnAs single crystalline thin films is studied. The role of elastic collisions between ions and atoms of the material is singled-out as the main process responsible for modifying the properties of the material. Thermal hysteresis suppression, and the loss of sharpness of the magneto-structural phase transition are studied as a function of different irradiation condi…
▽ More
The effect of ion bombardment on MnAs single crystalline thin films is studied. The role of elastic collisions between ions and atoms of the material is singled-out as the main process responsible for modifying the properties of the material. Thermal hysteresis suppression, and the loss of sharpness of the magneto-structural phase transition are studied as a function of different irradiation conditions. While the latter is shown to be associated with the ion induced disorder at the scale of the transition correlation length, the former is related to the coupling between disorder and the large-scale elastic field associated with the phase coexistence pattern.
△ Less
Submitted 28 January, 2024; v1 submitted 25 July, 2023;
originally announced July 2023.
-
Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
Authors:
M. Debiossac,
P. Atkinson,
A. Zugarramurdi,
M. Eddrief,
F. Finocchi,
V. H. Etgens,
A. Momeni,
H. Khemliche,
A. G. Borisov,
P. Roncin
Abstract:
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the…
▽ More
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the He atom beam incident along the highly corrugated $[ 1\bar{1}0 ]$ direction of the $β_{2}$(2$\times$4) reconstructed GaAs(001) surface are summarized and complemented by the measurements and calculations for the beam incidence along the weakly corrugated [010] direction where a periodicity twice smaller as expected is observed. The combination of the experiment, quantum scattering matrix calculations, and semiclassical analysis allows in this case to reveal structural characteristics of the surface. For the in situ measurements of GIFAD during molecular beam epitaxy of GaAs on GaAs surface we analyse the change in elastic and inelastic contributions in the scattered beam, and the variation of the diffraction pattern in polar angle scattering. This analysis outlines the robustness, the simplicity and the richness of the GIFAD as a technique to monitor the layer-by-layer epitaxial growth.
△ Less
Submitted 30 December, 2015;
originally announced December 2015.
-
Hints on the origin of the thermal hysteresis suppression in giant magnetocaloric thin films irradiatied with highly charged ions
Authors:
S Cervera,
M Trassinelli,
M Marangolo,
L. Bernard Carlsson,
M Eddrief,
Victor H. Etgens,
V Gafton,
S Hidki,
E Lamour,
A Lévy,
S Macé,
C Prigent,
J. -P Rozet,
S Steydli,
Y Zheng,
D Vernhet
Abstract:
In a recent experiment we demonstrated the possibility to suppress the thermal hysteresis of the phase transition in giant magnetocaloric MnAs thin film by interaction with slow highly charged ions (Ne 9+ at 90 keV) [1]. This phenomenon has a major impact for possible applications in magnetic refrigeration and thus its reproducibility and robustness are of prime importance. Here we present some ne…
▽ More
In a recent experiment we demonstrated the possibility to suppress the thermal hysteresis of the phase transition in giant magnetocaloric MnAs thin film by interaction with slow highly charged ions (Ne 9+ at 90 keV) [1]. This phenomenon has a major impact for possible applications in magnetic refrigeration and thus its reproducibility and robustness are of prime importance. Here we present some new investigations about the origin and the nature of the irradiation-induced defects responsible for the thermal hysteresis suppression. Considering in particular two samples that receive different ion fluences (two order of magnitude of difference), we investigate the reliability of this process. The stability of the irradiation-induced defects with respect to a soft annealing is studied by X-ray diffraction and magnetometry measurements, which provide some new insights on the mechanisms involved.
△ Less
Submitted 18 November, 2015;
originally announced November 2015.
-
Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment
Authors:
Martino Trassinelli,
Massimiliano Marangolo,
M. Eddrief,
V. H. Etgens,
V. Gafton,
S. Hidki,
Emmanuelle Lacaze,
Emily Lamour,
Christophe Prigent,
Jean-Pierre Rozet,
S. Steydli,
Y. Zheng,
Dominique Vernhet
Abstract:
We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hy…
▽ More
We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.
△ Less
Submitted 12 February, 2014;
originally announced February 2014.
-
Magnetic properties changes of MnAs thin films irradiated with highly charged ions
Authors:
Martino Trassinelli,
V. Gafton,
M. Eddrief,
V. H. Etgens,
S. Hidki,
Emmanuelle Lacaze,
Emily Lamour,
X. Luo,
M. Marangolo,
Jacques Merot,
Christophe Prigent,
Regina Reuschl,
Jean-Pierre Rozet,
S. Steydli,
Dominique Vernhet
Abstract:
We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\times10^{12}$ to $1.6\times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray dif…
▽ More
We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\times10^{12}$ to $1.6\times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presented. From the study of the lattice spacing, we measure a change on the film structure that depends on the received dose, similarly to previous studies with other materials. Investigations on the surface show a strong modification of its magnetic properties.
△ Less
Submitted 13 December, 2012;
originally announced December 2012.
-
Ultrasonic triggering of giant magnetocaloric effect in MnAs thin films
Authors:
J. -Y. Duquesne,
J. -Y. Prieur,
J. Agudo Canalejo,
V. H. Etgens,
M. Eddrief,
A. L. Ferreira,
M. Marangolo
Abstract:
Mechanical control of magnetic properties in magnetostrictive thin films offers the unexplored opportunity to employ surface wave acoustics in such a way that acoustic triggers dynamic magnetic effects. The strain-induced modulation of the magnetic anisotropy can play the role of a high frequency varying effective magnetic field leading to ultrasonic tuning of electronic and magnetic properties of…
▽ More
Mechanical control of magnetic properties in magnetostrictive thin films offers the unexplored opportunity to employ surface wave acoustics in such a way that acoustic triggers dynamic magnetic effects. The strain-induced modulation of the magnetic anisotropy can play the role of a high frequency varying effective magnetic field leading to ultrasonic tuning of electronic and magnetic properties of nanostructured materials, eventually integrated in semiconductor technology. Here, we report about the opportunity to employ surface acoustic waves to trigger magnetocaloric effect in MnAs(100nm)/GaAs(001) thin films. During the MnAs magnetostructural phase transition, in an interval range around room temperature (0°C - 60°C), ultrasonic waves (170 MHz) are strongly attenuated by the phase coexistence (up to 150 dB/cm). We show that the giant magnetocaloric effect of MnAs is responsible of the observed phenomenon. By a simple anelastic model we describe the temperature and the external magnetic field dependence of such a huge ultrasound attenuation. Strain-manipulation of the magnetocaloric effect could be a further interesting route for dynamic and static caloritronics and spintronics applications in semiconductor technology.
△ Less
Submitted 22 June, 2012;
originally announced June 2012.
-
Imaging the antiparallel magnetic alignment of adjacent Fe and MnAs thin films
Authors:
R. Breitwieser,
M. Marangolo,
J. Luning,
N. Jaouen,
L. Joly,
M. Eddrief,
V. H. Etgens,
M. Sacchi
Abstract:
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers display ridges and grooves, alternating alpha (magnetic) and beta (non-magnetic) phases. The self-organised microstructure of MnAs and the stray fields that it gene…
▽ More
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers display ridges and grooves, alternating alpha (magnetic) and beta (non-magnetic) phases. The self-organised microstructure of MnAs and the stray fields that it generates govern the local alignment between the Fe and alpha - MnAs magnetization directions, which is mostly antiparallel with a marked dependence upon the magnetic domain size.
△ Less
Submitted 3 September, 2008;
originally announced September 2008.
-
Biaxial Strain in the Hexagonal Plane of MnAs Thin Films: The Key to Stabilize Ferromagnetism to Higher Temperature
Authors:
V. Garcia,
Y. Sidis,
M. Marangolo,
F. Vidal,
M. Eddrief,
P. Bourges,
F. Maccherozzi,
F. Ott,
G. Panaccione,
V. H. Etgens
Abstract:
The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more import…
▽ More
The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more important, for the stabilization of the ferromagnetic alpha-phase at higher temperature than in bulk. We explain the premature appearance of the beta-phase at 275 K and the persistence of the ferromagnetic alpha-phase up to 350 K with thermodynamical arguments based on the MnAs phase diagram. It results that the biaxial strain in the hexagonal plane is the key parameter to extend the ferromagnetic phase well over room temperature.
△ Less
Submitted 2 August, 2007;
originally announced August 2007.
-
Detection of the magneto-structural phase coexistence in MnAs epilayers at a very early stage
Authors:
J. Milano,
L. B. Steren,
A. H. V. Repetto Llamazares,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior…
▽ More
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior with respect to the low-temperature homogeneous ferromagnetic phase. The angular and the temperature dependence of the spectra serve us to detect the inter-growth of the non-magnetic phase into the ferromagnetic phase at a very early stage of the process. The experimental data show that the new phase nucleates in a self-arranged array of stripes in MnAs/GaAs(100) thin films while it grows randomly in the same films grown on GaAs(111).
△ Less
Submitted 4 July, 2007;
originally announced July 2007.
-
Magnetization reversal and anomalous coercive field temperature dependence in MnAs epilayers grown on GaAs(100) and GaAs(111)B
Authors:
L. B. Steren,
J. Milano,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature…
▽ More
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature dependence of the coercivity of the films has been also examined, displaying a generic anomalous reentrant behavior at T$>$200 K. This feature is independent of the substrate orientation and films thickness and may be associated to the appearance of new pinning centers due to the nucleation of the $β$-phase at high temperatures.
△ Less
Submitted 27 June, 2006;
originally announced June 2006.
-
Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)
Authors:
M. Eddrief,
M. Marangolo,
V. H. Etgens,
S. Ustaze,
F. Sirotti,
M. Mulazzi,
G. Panaccione,
D. H. Mosca,
B. Lepine,
P. Schieffer
Abstract:
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microsc…
▽ More
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microscopic processes of the interface formation and on the iron valence-band. We show that the Fe contact with ZnSe induces a chemical conversion of the ZnSe outermost atomic layers. The main driving force that induces this rearrangement is the requirement for a stable Fe-Se bonding at the interface and a Se monolayer that floats at the Fe growth front. The released Zn atoms are incorporated in substitution in the Fe lattice position. This formation process is independent of the ZnSe surface termination (Zn or Se). The Fe valence-band evolution indicates that the d-states at the Fermi level show up even at submonolayer Fe coverage but that the Fe bulk character is only recovered above 10 monolayers. Indeed, the Fe 1-band states, theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fe junctions, are strongly modified at the FM/SC interface.
△ Less
Submitted 31 January, 2006;
originally announced January 2006.
-
Immense tunnel magnetoresistance mediated by Coulomb blockade effect and current-driven magnetization reversal in Co clusters embedded in a TiO2 matrix
Authors:
J. Varalda,
D. H. Mosca,
Y. -L. Zheng,
A. J. A. de Oliveira,
M. Marangolo,
W. A. Ortiz,
D. Demaille,
B. Vodungbo,
V. H. Etgens
Abstract:
This article was withdrawn by the authors due to misinterpretation of experimental data.
This article was withdrawn by the authors due to misinterpretation of experimental data.
△ Less
Submitted 18 May, 2010; v1 submitted 18 May, 2005;
originally announced May 2005.
-
Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures
Authors:
J. Varalda,
A. J. A. de Oliveira,
D. H. Mosca,
J. -M. George,
M. Eddrief,
M. Marangolo,
V. H. Etgens
Abstract:
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localiz…
▽ More
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localized states in the ZnSe barrier and spatial symmetry. The averaging of conduction over all localized states in a junction under resonant condition is strongly detrimental to the magnetoresistance.
△ Less
Submitted 17 May, 2005;
originally announced May 2005.
-
Magnetic and chemical properties of Cr-based films grown on GaAs(001)
Authors:
D. H. Mosca,
P. C. de Camargo,
J. L. Guimaraes,
W. H. Schreiner,
A. J. A. de Oliveira,
P. E. N. Souza,
M. Eddrief,
V. H. Etgens
Abstract:
We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemic…
▽ More
We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemical reactivity between Ga and Cr have negligible contribution in the formation of different thi films. A clear ferromagnetic response even at room temperature suggests the existence of a very thin interfacial layer formed that can eventually be burid during the growth process.
△ Less
Submitted 11 March, 2005;
originally announced March 2005.
-
Thermal enhancement of the antiferromagnetic exchange coupling between Fe epilayers separated by a crystalline ZnSe spacer
Authors:
J. Varalda,
J. Milano,
A. J. A. de Oliveira,
E. M. Kakuno,
I. Mazzaro,
D. H. Mosca,
L. B. Steren,
M. Eddrief,
M. Marangolo,
D. Demaille,
V. H. Etgens
Abstract:
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discuss…
▽ More
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe spacer layer appears to be the most plausible mechanism to induce the antiferromagnetic coupling.
△ Less
Submitted 7 March, 2005;
originally announced March 2005.
