Showing 1–1 of 1 results for author: Estevam, S
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Comparison between InAs-based and GaSb-based Interband cascade lasers with hybrid superlattice plasmon-enhanced claddings
Authors:
B. Petrović,
A. Bader,
J. Nauschütz,
T. Sato,
S. Birner,
S. Estevam,
R. Weih,
F. Hartmann,
S. Höfling
Abstract:
We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL…
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We compare InAs-based and GaSb-based interband cascade lasers (ICLs) with the same 12 stages active region designed to emit at a wavelength of 4.6 μm. They employ a hybrid cladding architecture with the same geometry and inner claddings consisting of InAs/AlSb superlattices but different outer claddings: The InAs-based ICL employs plasmon enhanced n-type doped InAs layers while the GaSb-based ICL employs plasmon-enhanced n-type doped InAs_0.915 Sb_0.085 claddings lattice matched to GaSb. Due to the lower refractive index of n+-InAsSb (n=2.88) compared to n+-InAs (n=3.10) and higher refractive index of separate confinement layers, the GaSb-based ICL shows a 3.8 % higher optical mode confinement in the active region compared to the InAs-based ICL. Experimentally, the GaSb-based ICL shows a 17.3 % lower threshold current density in pulsed operation at room temperature. Also presented is the influence of geometry and do** variation on confinement factors and calculated free carrier absorption losses in the GaSb-based ICL.
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Submitted 5 July, 2024; v1 submitted 11 March, 2024;
originally announced March 2024.
