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Reversible single-pulse laser-induced phase change of Sb$_2$S$_3$ thin films: multi-physics modeling and experimental demonstrations
Authors:
Capucine Laprais,
Clément Zrounba,
Julien Bouvier,
Nicholas Blanchard,
Matthieu Bugnet,
Yael Gutiérrez,
Saul Vazquez-Miranda,
Shirly Espinoza,
Peter Thiesen,
Romain Bourrellier,
Aziz Benamrouche,
Nicolas Baboux,
Guillaume Saint-Girons,
Lotfi Berguiga,
Sébastien Cueff
Abstract:
Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb$_2$S$_3$ emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and NIR. Controlli…
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Phase change materials (PCMs) have gained a tremendous interest as a means to actively tune nanophotonic devices through the large optical modulation produced by their amorphous to crystalline reversible transition. Recently, materials such as Sb$_2$S$_3$ emerged as particularly promising low loss PCMs, with both large refractive index modulations and transparency in the visible and NIR. Controlling the local and reversible phase transition in this material is of major importance for future applications, and an appealing method to do so is to exploit pulsed lasers. Yet, the physics and limits involved in the optical switching of Sb$_2$S$_3$ are not yet well understood. Here, we investigate the reversible laser-induced phase transition of Sb$_2$S$_3$, focusing specifically on the mechanisms that drive the optically induced amorphization, with multi-physics considerations including the optical and thermal properties of the PCM and its environment. We theoretically and experimentally determine the laser energy threshold for reversibly changing the phase of the PCM, not only between fully amorphous and crystalline states but also between partially recrystallized states. We then reveal the non-negligible impact of the material's polycrystallinity and anisotropy on the power thresholds for optical switching. Finally, we address the challenges related to laser amorphization of thick Sb$_2$S$_3$ layers, as well as strategies to overcome them. These results enable a qualitative and quantitative understanding of the physics behind the optically-induced reversible change of phase in Sb$_2$S$_3$ layers.
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Submitted 3 May, 2024;
originally announced May 2024.
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Femtosecond pump-probe absorption edge spectroscopy of cubic GaN
Authors:
Elias Baron,
Rüdiger Goldhahn,
Shirly Espinoza,
Martin Zahradník,
Mateusz Rebarz,
Jakob Andreasson,
Michael Deppe,
Donat J. As,
Martin Feneberg
Abstract:
Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change of the absorption onset (3.23eV for zb-GaN) is observed by investigating the imaginary part of the dielectric function. The 266nm (4.66eV) pump pulses induce a large free-carrier concentration up to $4\times 10^{20}$cm…
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Time-dependent femtosecond pump-probe spectroscopic ellipsometry studies on zincblende gallium-nitride (zb-GaN) are performed and analyzed between 2.9-3.7eV. An ultra-fast change of the absorption onset (3.23eV for zb-GaN) is observed by investigating the imaginary part of the dielectric function. The 266nm (4.66eV) pump pulses induce a large free-carrier concentration up to $4\times 10^{20}$cm$^{-3}$, influencing the transition energy between conduction and valence bands due to many-body effects, like band filling and band gap renormalization, up to $\approx$500meV. Additionally, the absorption of the pump-beam creates a free-carrier profile within the 605nm zb-GaN layer. This leads to varying optical properties from sample surface to substrate, which are taken into account by grading analysis for an accurate description of the experimental data. A temporal resolution of 100fs allows in-depth investigations of occurring ultra-fast relaxation and recombination processes. We provide a quantitative description of the free-carrier concentration and absorption onset at the sample surface as a function of relaxation, recombination, and diffusion yielding a characteristic relaxation time of 0.19ps and a recombination time of 26.1ps.
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Submitted 5 June, 2022;
originally announced June 2022.
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Photo-induced insulator-to-metal transition and coherent acoustic phonon propagation in LaCoO$_3$ thin films explored by femtosecond pump-probe ellipsometry
Authors:
M. Zahradnik,
M. Kiaba,
S. Espinoza,
M. Rebarz,
J. Andreasson,
O. Caha,
F. Abadizaman,
D. Munzar,
A. Dubroka
Abstract:
We have studied ultrafast dynamics of thin films of LaCoO$_3$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ with femtosecond pump-probe ellipsometry in the energy range of 1.6-3.4 eV. We have observed a large pump-induced transfer of spectral weight in LaCoO$_3$ that corresponds to an insulator-to-metal transition. The photo-induced metallic state initially relaxes via a fast process with a decay constant of ab…
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We have studied ultrafast dynamics of thin films of LaCoO$_3$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ with femtosecond pump-probe ellipsometry in the energy range of 1.6-3.4 eV. We have observed a large pump-induced transfer of spectral weight in LaCoO$_3$ that corresponds to an insulator-to-metal transition. The photo-induced metallic state initially relaxes via a fast process with a decay constant of about 200 fs. Both LaCoO$_3$ and La$_{0.5}$Sr$_{0.5}$CoO$_3$ exhibit a significant secondary transient structure in the 1-30 ps range. Results of measurements on films with different thicknesses demonstrate that it corresponds to a propagation of an acoustic strain pulse. On timescales longer than 100 ps, heat diffusion to the substrate takes place that can be modelled with a bi-exponential decay.
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Submitted 7 January, 2022;
originally announced January 2022.
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Ultrafast dynamics of hot charge carriers in an oxide semiconductor probed by femtosecond spectroscopic ellipsometry
Authors:
Steffen Richter,
Oliver Herrfurth,
Shirly Espinoza,
Mateusz Rebarz,
Miroslav Kloz,
Joshua A. Leveillee,
André Schleife,
Stefan Zollner,
Marius Grundmann,
Jakob Andreasson,
Rüdiger Schmidt-Grund
Abstract:
Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry…
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Many linked processes occur concurrently in strongly excited semiconductors, such as interband and intraband absorption, scattering of electrons and holes by the heated lattice, Pauli blocking, bandgap renormalization and the formation of Mahan excitons. In this work, we disentangle their dynamics and contributions to the optical response of a ZnO thin film. Using broadband pump-probe ellipsometry, we can directly and unambiguously obtain the real and imaginary part of the transient dielectric function which we compare with first-principles simulations. We find interband and excitonic absorption partially blocked and screened by the photo-excited electron occupation of the conduction band and hole occupation of the valence band (absorption bleaching). Exciton absorption turns spectrally narrower upon pum** and sustains the Mott transition, indicating Mahan excitons. Simultaneously, intra-valence-band transitions occur at sub-picosecond time scales after holes scatter to the edge of the Brillouin zone. Our results pave new ways for the understanding of non-equilibrium charge-carrier dynamics in materials by reliably distinguishing between changes in absorption coefficient and refractive index, thereby separating competing processes. This information will help to overcome the limitations of materials for high-power optical devices that owe their properties from dynamics in the ultrafast regime.
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Submitted 27 July, 2020; v1 submitted 15 February, 2019;
originally announced February 2019.
