Showing 1–20 of 20 results for author: Escott, C C

A singlet-triplet hole-spin qubit in MOS silicon

Authors: S. D. Liles, D. J. Halverson, Z. Wang, A. Shamim, R. S. Eggli, I. K. **, J. Hillier, K. Kumar, I. Vorreiter, M. Rendell, J. H. Huang, C. C. Escott, F. E. Hudson, W. H. Lim, D. Culcer, A. S. Dzurak, A. R. Hamilton

Abstract: Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with sing… ▽ More Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics, providing opportunities to further optimize spin qubits. Here, we demonstrate a singlet-triplet qubit using hole states in a planar metal-oxide-semiconductor double quantum dot. We observe rapid qubit control with singlet-triplet oscillations up to 400 MHz. The qubit exhibits promising coherence, with a maximum dephasing time of 600 ns, which is enhanced to 1.3 us using refocusing techniques. We investigate the magnetic field anisotropy of the eigenstates, and determine a magnetic field orientation to improve the qubit initialisation fidelity. These results present a step forward for spin qubit technology, by implementing a high quality singlet-triplet hole-spin qubit in planar architecture suitable for scaling up to 2D arrays of coupled qubits. △ Less

Submitted 14 October, 2023; originally announced October 2023.

Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays

Authors: Jesus D. Cifuentes, Tuomo Tanttu, Paul Steinacker, Santiago Serrano, Ingvild Hansen, James P. Slack-Smith, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Nard Dumoulin Stuyck, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Fay E. Hudson, Wee Han Lim, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electros… ▽ More Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of dense gate arrays to define the quantum dots, making them susceptible to crosstalk from capacitive coupling between a dot and its neighbouring gates. Small but sizeable spin-orbit interactions can transfer this electrostatic crosstalk to the spin g-factors, creating a dependence of the Larmor frequency on the electric field created by gate electrodes positioned even tens of nanometers apart. By studying the Stark shift from tens of spin qubits measured in nine different CMOS devices, we developed a theoretical frawework that explains how electric fields couple to the spin of the electrons in increasingly complex arrays, including those electric fluctuations that limit qubit dephasing times $T_2^*$. The results will aid in the design of robust strategies to scale CMOS quantum technology. △ Less

Submitted 4 September, 2023; originally announced September 2023.

Comments: 9 pages, 4 figures

High-fidelity operation and algorithmic initialisation of spin qubits above one kelvin

Authors: Jonathan Y. Huang, Rocky Y. Su, Wee Han Lim, MengKe Feng, Barnaby van Straaten, Brandon Severin, Will Gilbert, Nard Dumoulin Stuyck, Tuomo Tanttu, Santiago Serrano, Jesus D. Cifuentes, Ingvild Hansen, Amanda E. Seedhouse, Ensar Vahapoglu, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Christopher C. Escott, Natalia Ares, Stephen D. Bartlett, Andrea Morello, Andre Saraiva, Arne Laucht, Andrew S. Dzurak , et al. (1 additional authors not shown)

Abstract: The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures… ▽ More The encoding of qubits in semiconductor spin carriers has been recognised as a promising approach to a commercial quantum computer that can be lithographically produced and integrated at scale. However, the operation of the large number of qubits required for advantageous quantum applications will produce a thermal load exceeding the available cooling power of cryostats at millikelvin temperatures. As the scale-up accelerates, it becomes imperative to establish fault-tolerant operation above 1 kelvin, where the cooling power is orders of magnitude higher. Here, we tune up and operate spin qubits in silicon above 1 kelvin, with fidelities in the range required for fault-tolerant operation at such temperatures. We design an algorithmic initialisation protocol to prepare a pure two-qubit state even when the thermal energy is substantially above the qubit energies, and incorporate radio-frequency readout to achieve fidelities up to 99.34 per cent for both readout and initialisation. Importantly, we demonstrate a single-qubit Clifford gate fidelity of 99.85 per cent, and a two-qubit gate fidelity of 98.92 per cent. These advances overcome the fundamental limitation that the thermal energy must be well below the qubit energies for high-fidelity operation to be possible, surmounting a major obstacle in the pathway to scalable and fault-tolerant quantum computation. △ Less

Submitted 18 August, 2023; v1 submitted 3 August, 2023; originally announced August 2023.

Journal ref: Nature 627, 772-777 (2024)

Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations

Authors: Santiago Serrano, MengKe Feng, Wee Han Lim, Amanda E. Seedhouse, Tuomo Tanttu, Will Gilbert, Christopher C. Escott, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we pr… ▽ More High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays of quantum dots with multiple charge sensors that are, on average, farther away from the quantum dots, entailing a reduction in readout fidelities. Here, we present a readout technique that enhances the readout fidelity in a linear SiMOS 4-dot array by amplifying correlations between a pair of single-electron transistors, known as a twin SET. By recording and subsequently correlating the twin SET traces as we modulate the dot detuning across a charge transition, we demonstrate a reduction in the charge readout infidelity by over one order of magnitude compared to traditional readout methods. We also study the spin-to-charge conversion errors introduced by the modulation technique, and conclude that faster modulation frequencies avoid relaxation-induced errors without introducing significant spin flip errors, favouring the use of the technique at short integration times. This method not only allows for faster and higher fidelity qubit measurements, but it also enhances the signal corresponding to charge transitions that take place farther away from the sensors, enabling a way to circumvent the reduction in readout fidelities in large arrays of qubits. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Journal ref: PRX QUANTUM 5, 010301 (2024)

Path integral simulation of exchange interactions in CMOS spin qubits

Authors: Jesús D. Cifuentes, Philip Y. Mai, Frédéric Schlattner, H. Ekmel Ercan, MengKe Feng, Christopher C. Escott, Andrew S. Dzurak, Andre Saraiva

Abstract: The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interaction… ▽ More The boom of semiconductor quantum computing platforms created a demand for computer-aided design and fabrication of quantum devices. Path integral Monte Carlo (PIMC) can have an important role in this effort because it intrinsically integrates strong quantum correlations that often appear in these multi-electron systems. In this paper we present a PIMC algorithm that estimates exchange interactions of three-dimensional electrically defined quantum dots. We apply this model to silicon metal-oxide-semiconductor (MOS) devices and we benchmark our method against well-tested full configuration interaction (FCI) simulations. As an application, we study the impact of a single charge trap on two exchanging dots, opening the possibility of using this code to test the tolerance to disorder of CMOS devices. This algorithm provides an accurate description of this system, setting up an initial step to integrate PIMC algorithms into development of semiconductor quantum computers. △ Less

Submitted 3 August, 2023; v1 submitted 7 July, 2023; originally announced July 2023.

Comments: 10 pages , 5 figures

Bounds to electron spin qubit variability for scalable CMOS architectures

Authors: Jesús D. Cifuentes, Tuomo Tanttu, Will Gilbert, Jonathan Y. Huang, Ensar Vahapoglu, Ross C. C. Leon, Santiago Serrano, Dennis Otter, Daniel Dunmore, Philip Y. Mai, Frédéric Schlattner, MengKe Feng, Kohei Itoh, Nikolay Abrosimov, Hans-Joachim Pohl, Michael Thewalt, Arne Laucht, Chih Hwan Yang, Christopher C. Escott, Wee Han Lim, Fay E. Hudson, Rajib Rahman, Andrew S. Dzurak, Andre Saraiva

Abstract: Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, co… ▽ More Spins of electrons in CMOS quantum dots combine exquisite quantum properties and scalable fabrication. In the age of quantum technology, however, the metrics that crowned Si/SiO2 as the microelectronics standard need to be reassessed with respect to their impact upon qubit performance. We chart the spin qubit variability due to the unavoidable atomic-scale roughness of the Si/SiO$_2$ interface, compiling experiments in 12 devices, and develo** theoretical tools to analyse these results. Atomistic tight binding and path integral Monte Carlo methods are adapted for describing fluctuations in devices with millions of atoms by directly analysing their wavefunctions and electron paths instead of their energy spectra. We correlate the effect of roughness with the variability in qubit position, deformation, valley splitting, valley phase, spin-orbit coupling and exchange coupling. These variabilities are found to be bounded and lie within the tolerances for scalable architectures for quantum computing as long as robust control methods are incorporated. △ Less

Submitted 5 July, 2024; v1 submitted 26 March, 2023; originally announced March 2023.

Comments: 20 pages, 8 figures

Journal ref: Nat Commun 15, 4299 (2024)

Assessment of error variation in high-fidelity two-qubit gates in silicon

Authors: Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang, Nard Dumoulin Stuyck, Will Gilbert, Rocky Y. Su, MengKe Feng, Jesus D. Cifuentes, Amanda E. Seedhouse, Stefan K. Seritan, Corey I. Ostrove, Kenneth M. Rudinger, Ross C. C. Leon, Wister Huang, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Robin Blume-Kohout, Stephen D. Bartlett, Andrea Morello, Arne Laucht, Chih Hwan Yang , et al. (2 additional authors not shown)

Abstract: Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit pro… ▽ More Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-tolerant quantum processors. Solid-state platforms are particularly exposed to errors due to materials-induced variability between qubits, which leads to performance inconsistencies. Here we study the errors in a spin qubit processor, tying them to their physical origins. We leverage this knowledge to demonstrate consistent and repeatable operation with above 99% fidelity of two-qubit gates in the technologically important silicon metal-oxide-semiconductor (SiMOS) quantum dot platform. We undertake a detailed study of these operations by analysing the physical errors and fidelities in multiple devices through numerous trials and extended periods to ensure that we capture the variation and the most common error types. Physical error sources include the slow nuclear and electrical noise on single qubits and contextual noise. The identification of the noise sources can be used to maintain performance within tolerance as well as inform future device fabrication. Furthermore, we investigate the impact of qubit design, feedback systems, and robust gates on implementing scalable, high-fidelity control strategies. These results are achieved by using three different characterization methods, we measure entangling gate fidelities ranging from 96.8% to 99.8%. Our analysis tools identify the causes of qubit degradation and offer ways understand their physical mechanisms. These results highlight both the capabilities and challenges for the scaling up of silicon spin-based qubits into full-scale quantum processors. △ Less

Submitted 15 March, 2024; v1 submitted 7 March, 2023; originally announced March 2023.

Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform

Authors: Ik Kyeong **, Krittika Kumar, Matthew J. Rendell, Jonathan Y. Huang, Chris C. Escott, Fay E. Hudson, Wee Han Lim, Andrew S. Dzurak, Alexander R. Hamilton, Scott D. Liles

Abstract: Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address… ▽ More Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, challenges remain in this material system including difficulties using charge sensing to determine the number of holes in a quantum dot, and in controlling the coupling between adjacent quantum dots. In this work, we address these problems by fabricating an ambipolar complementary metal-oxide-semiconductor (CMOS) device using multilayer palladium gates. The device consists of an electron charge sensor adjacent to a hole double quantum dot. We demonstrate control of the spin state via electric dipole spin resonance (EDSR). We achieve smooth control of the inter-dot coupling rate over two orders of magnitude and use the charge sensor to perform spin-to-charge conversion to measure the hole singlet-triplet relaxation time of 11 μs for a known hole occupation. These results provide a path towards improving the quality and controllability of hole spin-qubits. △ Less

Submitted 31 October, 2022; originally announced November 2022.

Journal ref: Nano Lett. 2023, 23, 4, 1261-1266

Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry

Authors: Zeheng Wang, MengKe Feng, Santiago Serrano, William Gilbert, Ross C. C. Leon, Tuomo Tanttu, Philip Mai, Dylan Liang, Jonathan Y. Huang, Yue Su, Wee Han Lim, Fay E. Hudson, Christopher C. Escott, Andrea Morello, Chih Hwan Yang, Andrew S. Dzurak, Andre Saraiva, Arne Laucht

Abstract: The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transpor… ▽ More The small size and excellent integrability of silicon metal-oxide-semiconductor (SiMOS) quantum dot spin qubits make them an attractive system for mass-manufacturable, scaled-up quantum processors. Furthermore, classical control electronics can be integrated on-chip, in-between the qubits, if an architecture with sparse arrays of qubits is chosen. In such an architecture qubits are either transported across the chip via shuttling, or coupled via mediating quantum systems over short-to-intermediate distances. This paper investigates the charge and spin characteristics of an elongated quantum dot -- a so-called jellybean quantum dot -- for the prospects of acting as a qubit-qubit coupler. Charge transport, charge sensing and magneto-spectroscopy measurements are performed on a SiMOS quantum dot device at mK temperature, and compared to Hartree-Fock multi-electron simulations. At low electron occupancies where disorder effects and strong electron-electron interaction dominate over the electrostatic confinement potential, the data reveals the formation of three coupled dots, akin to a tunable, artificial molecule. One dot is formed centrally under the gate and two are formed at the edges. At high electron occupancies, these dots merge into one large dot with well-defined spin states, verifying that jellybean dots have the potential to be used as qubit couplers in future quantum computing architectures. △ Less

Submitted 8 August, 2022; originally announced August 2022.

On-demand electrical control of spin qubits

Authors: Will Gilbert, Tuomo Tanttu, Wee Han Lim, MengKe Feng, Jonathan Y. Huang, Jesus D. Cifuentes, Santiago Serrano, Philip Y. Mai, Ross C. C. Leon, Christopher C. Escott, Kohei M. Itoh, Nikolay V. Abrosimov, Hans-Joachim Pohl, Michael L. W. Thewalt, Fay E. Hudson, Andrea Morello, Arne Laucht, Chih Hwan Yang, Andre Saraiva, Andrew S. Dzurak

Abstract: Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnet… ▽ More Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays using silicon quantum dots, which offer high-fidelity control. Paradoxically, one of the most convenient control strategies is the integration of nanoscale magnets to artificially enhance the coupling between spins and electric field, which in turn hampers the spin's noise immunity and adds architectural complexity. Here we demonstrate a technique that enables a \emph{switchable} interaction between spins and orbital motion of electrons in silicon quantum dots, without the presence of a micromagnet. The naturally weak effects of the relativistic spin-orbit interaction in silicon are enhanced by more than three orders of magnitude by controlling the energy quantisation of electrons in the nanostructure, enhancing the orbital motion. Fast electrical control is demonstrated in multiple devices and electronic configurations, highlighting the utility of the technique. Using the electrical drive we achieve coherence time $T_{2,{\rm Hahn}}\approx50 μ$s, fast single-qubit gates with ${T_{π/2}=3}$ ns and gate fidelities of 99.93 % probed by randomised benchmarking. The higher gate speeds and better compatibility with CMOS manufacturing enabled by on-demand electric control improve the prospects for realising scalable silicon quantum processors. △ Less

Submitted 18 March, 2022; v1 submitted 17 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology (2023)

Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits

Authors: Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Christopher C. Escott, Arne Laucht, Andrew S. Dzurak

Abstract: Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how… ▽ More Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary for correcting inevitable errors in quantum operations. In this scenario, electron spins in gate-defined silicon quantum dots are strong contenders for encoding qubits, leveraging the microelectronics industry know-how for fabricating densely populated chips with nanoscale electrodes. The sophisticated material combinations used in commercially manufactured transistors, however, will have a very different impact on the fragile qubits. We review here some key properties of the materials that have a direct impact on qubit performance and variability. △ Less

Submitted 29 July, 2021; v1 submitted 28 July, 2021; originally announced July 2021.

Comments: Review paper

A high-sensitivity charge sensor for silicon qubits above one kelvin

Authors: Jonathan Y. Huang, Wee Han Lim, Ross C. C. Leon, Chih Hwan Yang, Fay E. Hudson, Christopher C. Escott, Andre Saraiva, Andrew S. Dzurak, Arne Laucht

Abstract: Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservo… ▽ More Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably relaxed. However, qubit readout mechanisms that rely on charge sensing with a single-island single-electron transistor (SISET) quickly lose sensitivity due to thermal broadening of the electron distribution in the reservoirs. Here we exploit the tunneling between two quantised states in a double-island SET (DISET) to demonstrate a charge sensor with an improvement in signal-to-noise by an order of magnitude compared to a standard SISET, and a single-shot charge readout fidelity above 99 % up to 8 K at a bandwidth > 100 kHz. These improvements are consistent with our theoretical modelling of the temperature-dependent current transport for both types of SETs. With minor additional hardware overheads, these sensors can be integrated into existing qubit architectures for high fidelity charge readout at few-kelvin temperatures. △ Less

Submitted 8 June, 2021; v1 submitted 10 March, 2021; originally announced March 2021.

Journal ref: Nano Letters v12, 6328 (2021)

Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing

Authors: Will Gilbert, Andre Saraiva, Wee Han Lim, Chih Hwan Yang, Arne Laucht, Benoit Bertrand, Nils Rambal, Louis Hutin, Christopher C. Escott, Maud Vinet, Andrew S. Dzurak

Abstract: The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in uni… ▽ More The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum computing applications. Initial demonstrations of quantum dot formation and spin blockade in CMOS foundry-compatible devices are encouraging, but results are yet to match the control of individual electrons demonstrated in university-fabricated multi-gate designs. We show here that the charge state of quantum dots formed in a CMOS nanowire device can be sensed by using floating gates to electrostatically couple it to a remote single electron transistor (SET) formed in an adjacent nanowire. By biasing the nanowire and gates of the remote SET with respect to the nanowire hosting the quantum dots, we controllably form ancillary quantum dots under the floating gates, thus enabling the demonstration of independent control over charge transitions in a quadruple (2x2) quantum dot array. This device overcomes the limitations associated with measurements based on tunnelling transport through the dots and permits the sensing of all charge transitions, down to the last electron in each dot. We use effective mass theory to investigate the necessary optimization of the device parameters in order to achieve the tunnel rates required for spin-based quantum computation. △ Less

Submitted 24 April, 2020; originally announced April 2020.

Comments: 12 pages and 6 figures, including supplementary material

Journal ref: Nano Lett. 2020, 20, 11, 7882-7888

Single-shot readout of an electron spin in silicon

Authors: Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg, Kok W. Chan, Hans Huebl, Mikko Mottonen, Christopher D. Nugroho, Changyi Yang, Jessica A. van Donkelaar, Andrew D. C. Alves, David N. Jamieson, Christopher C. Escott, Lloyd C. L. Hollenberg, Robert G. Clark, Andrew S. Dzurak

Abstract: The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit… ▽ More The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for the further scaling of microprocessors, it provides the potential for radical innovations in the form of spin-based quantum computers and spintronic devices. An electron spin in Si can represent a well-isolated quantum bit with long coherence times because of the weak spin-orbit coupling and the possibility to eliminate nuclear spins from the bulk crystal. However, the control of single electrons in Si has proved challenging, and has so far hindered the observation and manipulation of a single spin. Here we report the first demonstration of single-shot, time-resolved readout of an electron spin in Si. This has been performed in a device consisting of implanted phosphorus donors coupled to a metal-oxide-semiconductor single-electron transistor - compatible with current microelectronic technology. We observed a spin lifetime approaching 1 second at magnetic fields below 2 T, and achieved spin readout fidelity better than 90%. High-fidelity single-shot spin readout in Si opens the path to the development of a new generation of quantum computing and spintronic devices, built using the most important material in the semiconductor industry. △ Less

Submitted 24 May, 2010; v1 submitted 13 March, 2010; originally announced March 2010.

Comments: 5 pages, 4 figures

Journal ref: Nature 467, 687 (2010)

Resonant tunnelling features in the transport spectroscopy of quantum dots

Authors: C. C. Escott, F. A. Zwanenburg, A. Morello

Abstract: We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measu… ▽ More We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects, with a focus on the most common operating conditions. We describe several phenomena that can lead to apparently identical signatures in a bias spectroscopy measurement, with the aim of providing experimental methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or predict the performance of the dot for quantum information processing. △ Less

Submitted 10 February, 2010; originally announced February 2010.

Comments: 18 pages, 7 figures. Short review article submitted to Nanotechnology, special issue on 'Quantum Science and Technology at the Nanoscale'

Journal ref: Nanotechnology 21, 274018 (2010)

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Authors: Hans Huebl, Christopher D. Nugroho, Andrea Morello, Christopher C. Escott, Mark A. Eriksson, Changyi Yang, David N. Jamieson, Robert G. Clark, Andrew S. Dzurak

Abstract: We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rate… ▽ More We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates. △ Less

Submitted 12 December, 2009; originally announced December 2009.

Comments: 10 pages, 3 figures

Journal ref: Phys. Rev. B 81, 235318 (2010)

Probe and Control of the Reservoir Density of States in Single-Electron Devices

Authors: M. Mottonen, K. Y. Tan, K. W. Chan, F. A. Zwanenburg, W. H. Lim, C. C. Escott, J. -M. Pirkkalainen, A. Morello, C. Yang, J. A. van Donkelaar, A. D. C. Alves, D. N. Jamieson, L. C. L. Hollenberg, A. S. Dzurak

Abstract: We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window i… ▽ More We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two conceptually different objects to probe DOS, namely, a phosphorus donor and a quantum dot, both operating in the single-electron tunneling regime. We demonstrate how the peaks in DOS can be moved in the transport window independently of the other device properties, and in agreement with the theoretical analysis. This method introduces a fast and convenient way of identifying excited states in these emerging nanostructures. △ Less

Submitted 5 October, 2009; originally announced October 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 81, 161304 (2010)

Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon

Authors: A. Morello, C. C. Escott, H. Huebl, L. H. Willems van Beveren, L. C. L. Hollenberg, D. N. Jamieson, A. S. Dzurak, R. G. Clark

Abstract: We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an… ▽ More We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of the donor electron directly into the SET island during the read-out phase. Simulations show that the charge transfer signals are typically Δq > 0.2 e - over an order of magnitude larger than achievable with metallic SETs on the SiO2 surface. A complete spin-based qubit structure is obtained by adding a local Electron Spin Resonance line for coherent spin control. This architecture is ideally suited to demonstrate and study the coherent properties of donor electron spins, but can be expanded and integrated with classical control electronics in the context of scale-up. △ Less

Submitted 10 September, 2009; v1 submitted 8 April, 2009; originally announced April 2009.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 80, 081307(R) (2009)

Gate-controlled charge transfer in Si:P double quantum dots

Authors: F. E. Hudson, A. J. Ferguson, C. C. Escott, A. S. Dzurak, R. G. Clark, D. N. Jamieson, C. Yang

Abstract: We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single electron transistor which is capa… ▽ More We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with source and drain leads, which are separated from each other by undoped silicon tunnel barriers. Occupancy of the dots is controlled by surface gates and monitored using an aluminium single electron transistor which is capacitively coupled to the dots. We observe a charge stability diagram consistent with the designed many-electron double-dot system and this agrees well with capacitance modelling of the structure. We discuss the significance of these results to the realisation of smaller devices which may be used as charge or spin qubits. △ Less

Submitted 24 March, 2008; v1 submitted 19 December, 2006; originally announced December 2006.

Comments: accepted for publication in Nanotechnology

Modeling Single Electron Transfer in Si:P Double Quantum Dots

Authors: K. H. Lee, A. D. Greentree, J. P. Dinale, C. C. Escott, A. S. Dzurak, R. G. Clark

Abstract: Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within su… ▽ More Solid-state systems such as P donors in Si have considerable potential for realization of scalable quantum computation. Recent experimental work in this area has focused on implanted Si:P double quantum dots (DQDs) that represent a preliminary step towards the realization of single donor charge-based qubits. This paper focuses on the techniques involved in analyzing the charge transfer within such DQD devices and understanding the impact of fabrication parameters on this process. We show that misalignment between the buried dots and surface gates affects the charge transfer behavior and identify some of the challenges posed by reducing the size of the metallic dot to the few donor regime. △ Less

Submitted 13 September, 2004; originally announced September 2004.

Comments: 11 pages, 7 figures, submitted to Nanotechnology

Journal ref: Nanotechnology 16, 74-81 (2005)