Showing 1–50 of 58 results for author: Erwin, S C

Topological boundary states in engineered quantum-dot molecules on the InAs(111)A surface

Authors: Van Dong Pham, Yi Pan, Steven C. Erwin, Felix von Oppen, Kiyoshi Kanisawa, Stefan Fölsch

Abstract: Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling betwe… ▽ More Atom manipulation by scanning tunneling microscopy was used to construct quantum dots on the InAs(111)A surface. Each dot comprised six ionized indium adatoms. The positively charged adatoms create a confining potential acting on surface-state electrons, leading to the emergence of a bound state associated with the dot. By lining up the dots into N-dot chains with alternating tunnel coupling between them, quantum-dot molecules were constructed that revealed electronic boundary states as predicted by the Su-Schrieffer-Heeger (SSH) model of one-dimensional topological phases. Dot chains with odd N were constructed such that they host a single end or domain-wall state, allowing one to probe the localization of the boundary state on a given sublattice by scanning tunneling spectroscopy. We found probability density also on the forbidden sublattice together with an asymmetric energy spectrum of the chain-confined states. This deviation from the SSH model arises because the dots are charged and create a variation in onsite potential along the chain - which does not remove the boundary states but shifts their energy away from the midgap position. Our results demonstrate that topological boundary states can be created in quantum-dot arrays engineered with atomic-scale precision. △ Less

Submitted 19 June, 2024; originally announced June 2024.

Comments: 18 pages in total including 16 pages of main text plus figures and legends plus Appendix section and references as well as two pages of Supplemental Material

Quantum dots on the InAs(110) cleavage surface created by atom manipulation

Authors: Van Dong Pham, Yi Pan, Steven C. Erwin, Stefan Fölsch

Abstract: Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-prob… ▽ More Cryogenic scanning tunneling microscopy was employed in combination with density-functional theory calculations to explore quantum dots made of In adatoms on the InAs(110) surface. Each adatom adsorbs at a surface site coordinated by one cation and two anions, and transfers one electron to the substrate, creating an attractive quantum well for electrons in surface states. We used the scanning-probe tip to assemble the positively charged adatoms into precisely defined quantum dots exhibiting a bound state roughly 0.1 eV below the Fermi level at an intrinsic linewidth of only ~4 meV, as revealed by scanning tunneling spectroscopy. For quantum-dot dimers, we observed the emergence of a bonding and an antibonding state with even and odd wave-function character, respectively, demonstrating the capability to engineer quasi-molecular electronic states. InAs(110) constitutes a promising platform in this respect because highly perfect surfaces can be readily prepared by cleavage and charged adatoms can be generated in-situ by the scanning-probe tip. △ Less

Submitted 28 November, 2023; v1 submitted 20 November, 2023; originally announced November 2023.

Comments: 13 pages of referenced main text including 5 embedded figures plus legends; 4 pages of Supplementary Material including 3 figures plus legends

Topological States in Dimerized Quantum-Dot Chains Created by Atom Manipulation

Authors: Van Dong Pham, Yi Pan, Steven C. Erwin, Felix von Oppen, Kiyoshi Kanisawa, Stefan Fölsch

Abstract: Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface and to demonstrate that these chains give rise to one-dimensional topological phases. The dots were assembled from charged adatoms, creating a confini… ▽ More Topological electronic phases exist in a variety of naturally occurring materials but can also be created artificially. We used a cryogenic scanning tunneling microscope to create dimerized chains of identical quantum dots on a semiconductor surface and to demonstrate that these chains give rise to one-dimensional topological phases. The dots were assembled from charged adatoms, creating a confining potential with single-atom precision acting on electrons in surface states of the semiconductor. Quantum coupling between the dots leads to electronic states localized at the ends of the chains, as well as at deliberately created internal domain walls, in agreement with the predictions of the Su-Schrieffer-Heeger model. Scanning tunneling spectroscopy also reveals deviations from this well-established model manifested in an asymmetric level spectrum and energy shifts of the boundary states. The deviations arise because the dots are charged and hence lead to an onsite potential that varies along the chain. We show that this variation can be mitigated by electrostatic gating using auxiliary charged adatoms, enabling fine-tuning of the boundary states and control of their quantum superposition. The experimental data, which are complemented by theoretical modeling of the potential and the resulting eigenstates, reveal the important role of electrostatics in these engineered quantum structures. △ Less

Submitted 1 December, 2021; originally announced December 2021.

Comments: 16 pages double-line text plus appendix, 7 figures

Thermally-induced crossover from 2D to 1D behavior in an array of atomic wires: silicon dangling-bond solitons in Si(553)-Au

Authors: B. Hafke, C. Brand, T. Witte, B. Sothmann, M. Horn-von Hoegen, S. C. Erwin

Abstract: The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bonds at the step edges leads to a charge-ordered state within the row of dangling bonds with x3 periodicity. Interactions between the dangling bonds lea… ▽ More The self-assembly of submonolayer amounts of Au on the densely stepped Si(553) surface creates an array of closely spaced \atomic wires" separated by 1.5 nm. At low temperature, charge transfer between the terraces and the row of silicon dangling bonds at the step edges leads to a charge-ordered state within the row of dangling bonds with x3 periodicity. Interactions between the dangling bonds lead to their ordering into a fully two-dimensional (2D) array with centered registry between adjacent steps. We show that as the temperature is raised, soliton defects are created within each step edge. The concentration of solitons rises with increasing temperature and eventually destroys the 2D order by decoupling the step edges, reducing the effective dimensionality of the system to 1D. This crossover from higher to lower dimensionality is unexpected and, indeed, opposite to the behavior in other systems. △ Less

Submitted 26 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. Lett. 124, 016102 (2020)

Structural properties of Co$_{2}$TiSi films on GaAs(001)

Authors: B Jenichen, J Herfort, M Hanke, U Jahn, X Kong, M T Dau, A Trampert, H Kirmse, S C Erwin

Abstract: Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is foun… ▽ More Co$_{2}$TiSi films were grown by molecular beam epitaxy on GaAs(001) and analyzed using reflection high-energy electron diffraction, and electron microscopy. In addition, X-ray diffraction was combined with lattice parameter calculations by density functional theory comparing the \textit{L$2_1$} and \textit{B}2 structures and considering the influence of non--stoichiometry. Columnar growth is found and attributed to inhomogeneous epitaxial strain from non-random alloying. In films with thicknesses up to 13~nm these columns may be the origin of perpendicular magnetization with the easy axis perpendicular to the sample surface. We found \textit{L$2_1$} and \textit{B}2 ordered regions, however the [Co]/[Ti]--ratio is changing in dependence of the position in the film. The resulting columnar structure is leading to anisotropic \textit{B}2--ordering with the best order parallel to the axes of the columns. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Journal ref: J. Appl. Phys. 120, 225304 (2016)

Ordered structure of FeGe$_2$ formed during solid-phase epitaxy

Authors: B Jenichen, M Hanke, S Gaucher, A Trampert, J Herfort, H Kirmse, B Haas, E Willinger, X Huang, S C Erwin

Abstract: Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does… ▽ More Fe$_{3}$Si/Ge(Fe,Si)/Fe$_{3}$Si thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on Fe$_{3}$Si). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron X-ray diffraction. The Ge(Fe,Si) films crystallize in the well oriented, layered tetragonal structure FeGe$_{2}$ with space group P4mm. This kind of structure does not exist as a bulk material and is stabilized by solid phase epitaxy of Ge on Fe$_{3}$Si. We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film. △ Less

Submitted 11 July, 2019; originally announced July 2019.

Journal ref: Physical Review Materials 2, 051402(R) (2018)

How semiconductor nanoplatelets form

Authors: Andreas Riedinger, Florian D. Ott, Aniket Mule, Sergio Mazzotti, Philippe N. Knuesel, Stephan J. P. Kress, Ferry Prins, Steven C. Erwin, David J. Norris

Abstract: Colloidal nanoplatelets - quasi-two-dimensional sheets of semiconductor exhibiting efficient, spectrally pure fluorescence - form when liquid-phase syntheses of spherical quantum dots are modified. Despite intense interest in their properties, the mechanism behind their anisotropic shape and precise atomic-scale thickness remains unclear, and even counterintuitive when their crystal structure is i… ▽ More Colloidal nanoplatelets - quasi-two-dimensional sheets of semiconductor exhibiting efficient, spectrally pure fluorescence - form when liquid-phase syntheses of spherical quantum dots are modified. Despite intense interest in their properties, the mechanism behind their anisotropic shape and precise atomic-scale thickness remains unclear, and even counterintuitive when their crystal structure is isotropic. One commonly accepted explanation is that nanoclusters nucleate within molecular templates and then fuse. Here, we test this mechanism for zincblende nanoplatelets and show that they form instead due to an intrinsic instability in growth kinetics. We synthesize CdSe and CdS1-xSex nanoplatelets in template- and solvent-free isotropic melts containing only cadmium carboxylate and chalcogen, a finding incompatible with previous explanations. Our model, based on theoretical results showing enhanced growth on narrow surface facets, rationalizes nanoplatelet formation and experimental dependencies on temperature, time, and carboxylate length. Such understanding should lead to improved syntheses, controlled growth on surfaces, and broader libraries of nanoplatelet materials. △ Less

Submitted 22 September, 2016; v1 submitted 20 May, 2016; originally announced May 2016.

Comments: 57 pages, 23 figures (main text and supporting information merged), submitted

Gating a single-molecule transistor with individual atoms

Authors: Jesús Martínez-Blanco, Christophe Nacci, Steven C. Erwin, Kiyoshi Kanisawa, Elina Locane, Mark Thomas, Felix von Oppen, Piet W. Brouwer, Stefan Fölsch

Abstract: Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hop** via individual orbitals. Single-electron transport in molecular transistors has been previously studied using top-down approaches to gating, such as lithography and break junc… ▽ More Transistors, regardless of their size, rely on electrical gates to control the conductance between source and drain contacts. In atomic-scale transistors, this conductance is exquisitely sensitive to single electrons hop** via individual orbitals. Single-electron transport in molecular transistors has been previously studied using top-down approaches to gating, such as lithography and break junctions. But atomically precise control of the gate - which is crucial to transistor action at the smallest size scales - is not possible with these approaches. Here, we used individual charged atoms, manipulated by a scanning tunnelling microscope, to create the electrical gates for a single-molecule transistor. This degree of control allowed us to tune the molecule into the regime of sequential single-electron tunnelling, albeit with a conductance gap more than one order of magnitude larger than observed previously. This unexpected behaviour arises from the existence of two different orientational conformations of the molecule, depending on its charge state. Our results show that strong coupling between these charge and conformational degrees of freedom leads to new behaviour beyond the established picture of single-electron transport in atomic-scale transistors. △ Less

Submitted 2 March, 2016; originally announced March 2016.

Comments: 15 pages, 4 figures

Journal ref: Nature Physics 11, 640-644 (2015)

Spin Chains and Electron Transfer at Stepped Silicon Surfaces

Authors: Julian Aulbach, Steven C. Erwin, Ralph Claessen, Joerg Schaefer

Abstract: High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases - specifically, for Si(553)-Au and Si(557)-Au - a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this c… ▽ More High-index surfaces of silicon with adsorbed gold can reconstruct to form highly ordered linear step arrays. These steps take the form of a narrow strip of graphitic silicon. In some cases - specifically, for Si(553)-Au and Si(557)-Au - a large fraction of the silicon atoms at the exposed edge of this strip are known to be spin-polarized and charge-ordered along the edge. The periodicity of this charge ordering is always commensurate with the structural periodicity along the step edge and hence leads to highly ordered arrays of local magnetic moments that can be regarded as "spin chains". Here, we demonstrate theoretically as well as experimentally that the closely related Si(775)-Au surface has - despite its very similar overall structure - zero spin polarization at its step edge. Using a combination of density-functional theory and scanning tunneling microscopy, we propose an electron-counting model that accounts for these differences. The model also predicts that unintentional defects and intentional dopants can create local spin moments at Si(hhk)-Au step edges. We analyze in detail one of these predictions and verify it experimentally. This finding opens the door to using techniques of surface chemistry and atom manipulation to create and control silicon spin chains. △ Less

Submitted 31 March, 2016; v1 submitted 27 January, 2016; originally announced January 2016.

Comments: 7 pages, 4 figures; Supplement; accepted for publication in Nano Letters

Diffraction at GaAs/Fe$_{3}$Si core/shell nanowires: the formation of nanofacets

Authors: Bernd Jenichen, Michael Hanke, Maria Hilse, Jens Herfort, Achim Trampert, Steven C. Erwin

Abstract: GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes. Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surface has the lowest energy in agreeme… ▽ More GaAs/Fe$_{3}$Si core/shell nanowire structures were fabricated by molecular-beam epitaxy on oxidized Si(111) substrates and investigated by synchrotron x-ray diffraction. The surfaces of the Fe$_3$Si shells exhibit nanofacets. These facets consist of well pronounced Fe$_3$Si{111} planes. Density functional theory reveals that the Si-terminated Fe$_3$Si{111} surface has the lowest energy in agreement with the experimental findings. We can analyze the x-ray diffuse scattering and diffraction of the ensemble of nanowires avoiding the signal of the substrate and poly-crystalline films located between the wires. Fe$_3$Si nanofacets cause streaks in the x-ray reciprocal space map rotated by an azimuthal angle of 30° compared with those of bare GaAs nanowires. In the corresponding TEM micrograph the facets are revealed only if the incident electron beam is oriented along [1$\overline{1}$0] in accordance with the x-ray results. Additional maxima in the x-ray scans indicate the onset of chemical reactions between Fe$_{3}$Si shells and GaAs cores occurring at increased growth temperatures. △ Less

Submitted 13 April, 2016; v1 submitted 7 December, 2015; originally announced December 2015.

Comments: 15 pages, 5 figures

Journal ref: AIP ADVANCES 6, 055108 (2016)

Energy splitting of image states induced by the surface potential corrugation of InAs(111)A

Authors: J. Martínez-Blanco, S. C. Erwin, K. Kanisawa, S. Fölsch

Abstract: By means of scanning tunneling spectroscopy (STS) we study the electronic structure of the III-V semiconductor surface InAs(111)A in the field emission regime (above the vacuum level). At high sample bias voltages (approaching +10 V), a series of well defined resonances are identified as the typical Stark shifted image states that are commonly found on metallic surfaces in the form of field emissi… ▽ More By means of scanning tunneling spectroscopy (STS) we study the electronic structure of the III-V semiconductor surface InAs(111)A in the field emission regime (above the vacuum level). At high sample bias voltages (approaching +10 V), a series of well defined resonances are identified as the typical Stark shifted image states that are commonly found on metallic surfaces in the form of field emission resonances (FER). At lower bias voltages, a more complex situation arises. Up to three double peaks are identified as the first three FERs that are split due to their interaction with the periodic surface potential. The high corrugation of this potential is also quantified by means of density functional theory (DFT) calculations. Another sharp resonance not belonging to the FER series is associated with an unoccupied surface state. △ Less

Submitted 22 June, 2015; originally announced June 2015.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 92, 115444 (2015)

Microscopic Theory of Cation Exchange in CdSe Nanocrystals

Authors: Florian D. Ott, Leo L. Spiegel, David J. Norris, Steven C. Erwin

Abstract: Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We used density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb int… ▽ More Although poorly understood, cation-exchange reactions are increasingly used to dope or transform colloidal semiconductor nanocrystals (quantum dots). We used density-functional theory and kinetic Monte Carlo simulations to develop a microscopic theory that explains structural, optical, and electronic changes observed experimentally in Ag-cation-exchanged CdSe nanocrystals. We find that Coulomb interactions, both between ionized impurities and with the polarized nanocrystal surface, play a key role in cation exchange. Our theory also resolves several experimental puzzles related to photoluminescence and electrical behavior in CdSe nanocrystals doped with Ag. △ Less

Submitted 15 October, 2014; v1 submitted 16 September, 2014; originally announced September 2014.

Comments: 12 pages, 4 figures. Published in Physical Review Letters. Supplementary information is included as ancillary file. The movie can be downloaded from http://journals.aps.org/prl/abstract/10.1103/PhysRevLett.113.156803

Journal ref: Physical Review Letters 113, 156803 (2014)

Investigation of unconventional reconstruction and electronic properties on the Na2IrO3 surface

Authors: F. Lupke, S. Manni, S. C. Erwin, I. I. Mazin, P. Gegenwart, M. Wenderoth

Abstract: Na2IrO3 is an intriguing material for which spin-orbit coupling plays a key role. Theoretical predictions, so far unverified, have been made that the surface of Na2IrO3 should exhibit a clear signature of the quantum spin Hall effect. We studied the surface of Na2IrO3 using scanning tunneling microscopy and density-functional theory calculations. We observed atomic level resolution of the surface… ▽ More Na2IrO3 is an intriguing material for which spin-orbit coupling plays a key role. Theoretical predictions, so far unverified, have been made that the surface of Na2IrO3 should exhibit a clear signature of the quantum spin Hall effect. We studied the surface of Na2IrO3 using scanning tunneling microscopy and density-functional theory calculations. We observed atomic level resolution of the surface and two types of terminations with different surface periodicity and Na content. By comparing bias-dependent experimental topographic images to simulated images, we determined the detailed atomistic structure of both observed surfaces. One of these reveals a strong relaxation to the surface of Na atoms from the subsurface region two atomic layers below. Such dramatic structural changes at the surface cast doubt on any prediction of surface properties based on bulk electronic structure. Indeed, using spatially resolved tunneling spectroscopy we found no indication of the predicted quantum spin Hall behavior. △ Less

Submitted 17 July, 2014; originally announced July 2014.

Journal ref: Phys. Rev. B 91 (2015) 041405(R)

Spectroscopic evidence for spin-polarized edge states in graphitic Si nanowires

Authors: P. C. Snijders, P. S. Johnson, N. P. Guisinger, S. C. Erwin, F. J. Himpsel

Abstract: The step edges on the Si(553)-Au surface undergo a 1 x 3 reconstruction at low temperature which has recently been interpreted theoretically as the x3 ordering of spin-polarized silicon atoms at the edges of the graphitic Si nanowires on this vicinal surface. This predicted magnetic ground state has a clear spectroscopic signature - a silicon step-edge state at 0.5 eV above the Fermi level - that… ▽ More The step edges on the Si(553)-Au surface undergo a 1 x 3 reconstruction at low temperature which has recently been interpreted theoretically as the x3 ordering of spin-polarized silicon atoms at the edges of the graphitic Si nanowires on this vicinal surface. This predicted magnetic ground state has a clear spectroscopic signature - a silicon step-edge state at 0.5 eV above the Fermi level - that arises from strong exchange splitting and hence would not occur without spin polarization. Here we report spatially resolved scanning tunneling spectroscopy data for these nanowires. At low temperature we find an unoccupied state at 0.5 eV above every third step edge silicon atom, in excellent agreement with the spin-polarized ground state predicted theoretically. This spin-polarized state survives up to room temperature where the position of the spins rapidly fluctuates among all Si step-edge sites. △ Less

Submitted 21 January, 2014; originally announced January 2014.

Journal ref: New Journal of Physics 14 (2012) 103004

Evidence for Long-Range Spin Order Instead of a Peierls Transition in Si(553)-Au Chains

Authors: J. Aulbach, J. Schaefer, S. C. Erwin, S. Meyer, C. Loho, J. Settelein, R. Claessen, -

Abstract: Stabilization of the Si(553) surface by Au adsorption results in two different atomically defined chain types, one of Au atoms and one of Si. At low temperature these chains develop two- and threefold periodicity, respectively, previously attributed to Peierls instabilities. Here we report evidence from scanning tunneling microscopy that rules out this interpretation. The x3 superstructure of the… ▽ More Stabilization of the Si(553) surface by Au adsorption results in two different atomically defined chain types, one of Au atoms and one of Si. At low temperature these chains develop two- and threefold periodicity, respectively, previously attributed to Peierls instabilities. Here we report evidence from scanning tunneling microscopy that rules out this interpretation. The x3 superstructure of the Si chains vanishes for low tunneling bias, i.e., close the Fermi level. In addition, the Au chains remain metallic despite their period doubling. Both observations are inconsistent with a Peierls mechanism. On the contrary, our results are in excellent, detailed agreement with the Si(553)-Au ground state predicted by density-functional theory, where the x2 periodicity of the Au chain is an inherent structural feature and every third Si atom is spin-polarized. △ Less

Submitted 4 September, 2013; originally announced September 2013.

Comments: 5 pages, 4 figures (supplement not included here). Accepted for publication at Physical Review Letters on September 03, 2013

Journal ref: Phys. Rev. Lett. 111 (2013) 137203

Silicon spin chains at finite temperature: dynamics of Si(553)-Au

Authors: Steven C. Erwin, P. C. Snijders

Abstract: When gold is deposited on Si(553), the surface self-assembles to form a periodic array of steps with nearly perfect structural order. In scanning tunneling microscopy these steps resemble quasi-one-dimensional atomic chains. At temperatures below ~50 K the chains develop tripled periodicity. We recently predicted, on the basis of density-functional theory calculations at T=0, that this tripled per… ▽ More When gold is deposited on Si(553), the surface self-assembles to form a periodic array of steps with nearly perfect structural order. In scanning tunneling microscopy these steps resemble quasi-one-dimensional atomic chains. At temperatures below ~50 K the chains develop tripled periodicity. We recently predicted, on the basis of density-functional theory calculations at T=0, that this tripled periodicity arises from the complete polarization of the electron spin on every third silicon atom along the step; in the ground state these linear chains of silicon spins are antiferromagnetically ordered. Here we explore, using ab-initio molecular dynamics and kinetic Monte Carlo simulations, the behavior of silicon spin chains on Si(553)-Au at finite temperature. Thermodynamic phase transitions at T>0 in one-dimensional systems are prohibited by the Mermin-Wagner theorem. Nevertheless we find that a surprisingly sharp onset occurs upon cooling---at about 30 K for perfect surfaces and at higher temperature for surfaces with defects---to a well-ordered phase with tripled periodicity, in good agreement with experiment. △ Less

Submitted 3 April, 2013; originally announced April 2013.

Comments: 9 pages, 9 figures

Theory of magnetic enhancement in strontium hexaferrite through Zn-Sn pair substitution

Authors: Laalitha S. I. Liyanage, Sungho Kim, Yang Ki Hong, Ji-Hoon Park, Steven C. Erwin, Seong-Gon Kim

Abstract: We study the site occupancy and magnetic properties of Zn-Sn substituted M-type Sr-hexaferrite SrFe$_{12-x}$(Zn$_{0.5}$Sn$_{0.5}$)$_x$O$_{19}$ with x = 1 using first-principles total-energy calculations. We find that in a ground-state configuration Zn-Sn ions preferentially occupy $4f_1$ and $4f_2$ sites unlike the model previously suggested by Ghasemi et al. [J. Appl. Phys, \textbf{107}, 09A734 (… ▽ More We study the site occupancy and magnetic properties of Zn-Sn substituted M-type Sr-hexaferrite SrFe$_{12-x}$(Zn$_{0.5}$Sn$_{0.5}$)$_x$O$_{19}$ with x = 1 using first-principles total-energy calculations. We find that in a ground-state configuration Zn-Sn ions preferentially occupy $4f_1$ and $4f_2$ sites unlike the model previously suggested by Ghasemi et al. [J. Appl. Phys, \textbf{107}, 09A734 (2010)], where Zn$^{2+}$ and Sn$^{4+}$ ions occupy the $2b$ and $4f_2$ sites. Density-functional theory calculations show that our model has a lower total energy by more than 0.2 eV per unit cell compared to Ghasemi's model. More importantly, the latter does not show an increase in saturation magnetization ($M_s$) compared to the pure $M$-type Sr-hexaferrite, in disagreement with the experiment. On the other hand, our model correctly predicts a rapid increase in $M_s$ as well as a decrease in magnetic anisotropy compared to the pure $M$-type Sr-hexaferrite, consistent with experimental measurements. △ Less

Submitted 31 May, 2013; v1 submitted 23 September, 2012; originally announced September 2012.

Comments: 7 pages, 4 figures

Epitaxial interfaces between crystallographically mismatched materials

Authors: Steven C. Erwin, Cunxu Gao, Claudia Roder, Jonas Lähnemann, Oliver Brandt

Abstract: We report an unexpected mechanism by which an epitaxial interface can form between materials having strongly mismatched lattice constants. A simple model is proposed in which one material tilts out of the interface plane to create a coincidence-site lattice that balances two competing geometrical criteria---low residual strain and short coincidence-lattice period. We apply this model, along with c… ▽ More We report an unexpected mechanism by which an epitaxial interface can form between materials having strongly mismatched lattice constants. A simple model is proposed in which one material tilts out of the interface plane to create a coincidence-site lattice that balances two competing geometrical criteria---low residual strain and short coincidence-lattice period. We apply this model, along with complementary first-principles total-energy calculations, to the interface formed by molecular-beam epitaxy of cubic Fe on hexagonal GaN and find excellent agreement between theory and experiment. △ Less

Submitted 15 June, 2011; originally announced June 2011.

Comments: 4 pages, 4 figures

Journal ref: Physical Review Letters 107, 026102 (2011)

Intrinsic magnetism at silicon surfaces

Authors: Steven C. Erwin, Franz J. Himpsel

Abstract: It has been a long-standing goal to create magnetism in a nonmagnetic material by manipulating its structure at the nanometer scale. This idea may be realized in graphitic carbon: evidence suggests magnetic states at the edges of graphene ribbons and at grain boundaries in graphite. Such phenomena have long been regarded as unlikely in silicon because there is no graphitic bulk phase. Here we show… ▽ More It has been a long-standing goal to create magnetism in a nonmagnetic material by manipulating its structure at the nanometer scale. This idea may be realized in graphitic carbon: evidence suggests magnetic states at the edges of graphene ribbons and at grain boundaries in graphite. Such phenomena have long been regarded as unlikely in silicon because there is no graphitic bulk phase. Here we show theoretically that intrinsic magnetism indeed exists in a class of silicon surfaces whose step edges have a nanoscale graphitic structure. This magnetism is intimately connected to recent observations, including the coexistence of double- and triple-period distortions and the absence of edge states in photoemission. Magnetism in silicon may ultimately provide a path toward spin-based logic and storage at the atomic level. △ Less

Submitted 31 August, 2010; originally announced August 2010.

Comments: 6 pages, 3 figures

Journal ref: Nat. Commun. 1:58 (2010)

Structure and energetics of Si(111)-(5x2)-Au

Authors: Steven C. Erwin, Ingo Barke, F. J. Himpsel

Abstract: We propose a new structural model for the Si(111)-(5x2)-Au reconstruction. The model incorporates a new experimental value of 0.6 monolayer for the coverage of gold atoms, equivalent to six gold atoms per 5x2 cell. Five main theoretical results, obtained from first-principles total-energy calculations, support the model. (1) In the presence of silicon adatoms the periodicity of the gold rows spo… ▽ More We propose a new structural model for the Si(111)-(5x2)-Au reconstruction. The model incorporates a new experimental value of 0.6 monolayer for the coverage of gold atoms, equivalent to six gold atoms per 5x2 cell. Five main theoretical results, obtained from first-principles total-energy calculations, support the model. (1) In the presence of silicon adatoms the periodicity of the gold rows spontaneously doubles, in agreement with experiment. (2) The dependence of the surface energy on the adatom coverage indicates that a uniformly covered phase is unstable and will phase-separate into empty and covered regions, as observed experimentally. (3) Theoretical scanning tunneling microscopy images are in excellent agreement with experiment. (4) The calculated band structure is consistent with angle-resolved photoemission spectra; analysis of their correspondence allows the straightforward assignment of observed surface states to specific atoms. (5) The calculated activation barrier for diffusion of silicon adatoms along the row direction is in excellent agreement with the experimentally measured barrier. △ Less

Submitted 9 September, 2009; originally announced September 2009.

Comments: 11 pages, 7 figures, also available with higher-resolution figures from http://cst-www.nrl.navy.mil/users/erwin/ausi111.v5.pdf

Stability and structure of atomic chains on Si(111)

Authors: Corsin Battaglia, Philipp Aebi, Steven C. Erwin

Abstract: We study the stability and structure of self-assembled atomic chains on Si(111) induced by monovalent, divalent and trivalent adsorbates, using first-principles total-energy calculations and scanning tunneling microscopy. We find that only structures containing exclusively silicon honeycomb or silicon Seiwatz chains are thermodynamically stable, while mixed configurations, with both honeycomb an… ▽ More We study the stability and structure of self-assembled atomic chains on Si(111) induced by monovalent, divalent and trivalent adsorbates, using first-principles total-energy calculations and scanning tunneling microscopy. We find that only structures containing exclusively silicon honeycomb or silicon Seiwatz chains are thermodynamically stable, while mixed configurations, with both honeycomb and Seiwatz chains, may be kinetically stable. The stability and structure of these atomic chains can be understood using a surprisingly simple electron-counting rule. △ Less

Submitted 13 May, 2008; originally announced May 2008.

Journal ref: Phys. Rev. B 78, 075409 (2008)

Comment on "Self-Purification in Semiconductor Nanocrystals"

Authors: M. -H. Du, S. C. Erwin, Al. L. Efros, D. J. Norris

Abstract: In a recent Letter [PRL 96, 226802 (2006)], Dalpian and Chelikowsky claimed that formation energies of Mn impurities in CdSe nanocrystals increase as the size of the nanocrystal decreases, and argued that this size dependence leads to "self-purification" of small nanocrystals. They presented density-functional-theory (DFT) calculations showing a strong size dependence for Mn impurity formation e… ▽ More In a recent Letter [PRL 96, 226802 (2006)], Dalpian and Chelikowsky claimed that formation energies of Mn impurities in CdSe nanocrystals increase as the size of the nanocrystal decreases, and argued that this size dependence leads to "self-purification" of small nanocrystals. They presented density-functional-theory (DFT) calculations showing a strong size dependence for Mn impurity formation energies, and proposed a general explanation. In this Comment we show that several different DFT codes, pseudopotentials, and exchange-correlation functionals give a markedly different result: We find no such size dependence. More generally, we argue that formation energies are not relevant to substitutional do** in most colloidally grown nanocrystals. △ Less

Submitted 2 May, 2008; originally announced May 2008.

Comments: 1 page, 1 figure

Journal ref: Phys. Rev. Lett. 100, 179702 (2008)

Ground-state structure of the hydrogen double vacancy on Pd(111)

Authors: Sungho Kim, Seong-Gon Kim, S. C. Erwin

Abstract: We determine the ground-state structure of a double vacancy in a hydrogen monolayer on the Pd(111) surface. We represent the double vacancy as a triple vacancy containing one additional hydrogen atom. The potential-energy surface for a hydrogen atom moving in the triple vacancy is obtained by density-functional theory, and the wave function of the fully quantum hydrogen atom is obtained by solvi… ▽ More We determine the ground-state structure of a double vacancy in a hydrogen monolayer on the Pd(111) surface. We represent the double vacancy as a triple vacancy containing one additional hydrogen atom. The potential-energy surface for a hydrogen atom moving in the triple vacancy is obtained by density-functional theory, and the wave function of the fully quantum hydrogen atom is obtained by solving the Schrödinger equation. We find that an H atom in a divacancy defect experiences significant quantum effects, and that the ground-state wave function is centered at the hcp site rather than the fcc site normally occupied by H atoms on Pd(111). Our results agree well with scanning tunneling microscopy images. △ Less

Submitted 18 September, 2007; v1 submitted 12 September, 2007; originally announced September 2007.

Comments: 5 pages, 3 figures

Structure of AlSb(001) and GaSb(001) Surfaces Under Extreme Sb-rich Conditions

Authors: Jeffery Houze, Sungho Kim, Seong-Gon Kim, S. C. Erwin, L. J. Whitman

Abstract: We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the predictions are in excellent agreement with experimentally observed reconstructions. For GaSb(001), we show that previously proposed model accounts… ▽ More We use density-functional theory to study the structure of AlSb(001) and GaSb(001) surfaces. Based on a variety of reconstruction models, we construct surface stability diagrams for AlSb and GaSb under different growth conditions. For AlSb(001), the predictions are in excellent agreement with experimentally observed reconstructions. For GaSb(001), we show that previously proposed model accounts for the experimentally observed reconstructions under Ga-rich growth conditions, but fails to explain the experimental observations under Sb-rich conditions. We propose a new model that has a substantially lower surface energy than all (nx5)-like reconstructions proposed previously and that, in addition, leads to a simulated STM image in better agreement with experiment than existing models. However, this new model has higher surface energy than some of (4x3)-like reconstructions, models with periodicity that has not been observed. Hence we conclude that the experimentally observed (1x5) and (2x5) structures on GaSb(001) are kinetically limited rather than at the ground state. △ Less

Submitted 12 September, 2007; v1 submitted 27 June, 2007; originally announced June 2007.

Comments: 6 pages, 6 figures

Bipolar spintronics: From spin injection to spin-controlled logic

Authors: Igor Zutic, Jaroslav Fabian, Steven C. Erwin

Abstract: An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, whi… ▽ More An impressive success of spintronic applications has been typically realized in metal-based structures which utilize magnetoresistive effects for substantial improvements in the performance of computer hard drives and magnetic random access memories. Correspondingly, the theoretical understanding of spin-polarized transport is usually limited to a metallic regime in a linear response, which, while providing a good description for data storage and magnetic memory devices, is not sufficient for signal processing and digital logic. In contrast, much less is known about possible applications of semiconductor-based spintronics and spin-polarized transport in related structures which could utilize strong intrinsic nonlinearities in current-voltage characteristics to implement spin-based logic. Here we discuss the challenges for realizing a particular class of structures in semiconductor spintronics: our proposal for bipolar spintronic devices in which carriers of both polarities (electrons and holes) contribute to spin-charge coupling. We formulate the theoretical framework for bipolar spin-polarized transport, and describe several novel effects in two- and three-terminal structures which arise from the interplay between nonequilibrium spin and equilibrium magnetization. △ Less

Submitted 14 June, 2007; originally announced June 2007.

Comments: 16 pages, 7 figures

Journal ref: J. Phys.: Condens. Matter 19 (2007) 165219 (23pp)

Thermodynamics of carrier-mediated magnetism in semiconductors

Authors: A. G. Petukhov, Igor Zutic, Steven C. Erwin

Abstract: We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing… ▽ More We propose a model of carrier-mediated ferromagnetism in semiconductors that accounts for the temperature dependence of the carriers. The model permits analysis of the thermodynamic stability of competing magnetic states, opening the door to the construction of magnetic phase diagrams. As an example we analyze the stability of a possible reentrant ferromagnetic semiconductor, in which increasing temperature leads to an increased carrier density, such that the enhanced exchange coupling between magnetic impurities results in the onset of ferromagnetism as temperature is raised. △ Less

Submitted 30 May, 2007; originally announced May 2007.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 99, 257202 (2007)

Observing Spin Polarization of Individual Magnetic Adatoms

Authors: Y. Yayon, V. W. Brar, L. Senapati, S. C. Erwin, M. F. Crommie

Abstract: We have used spin-polarized scanning tunneling spectroscopy to observe the spin-polarization state of individual Fe and Cr atoms adsorbed onto Co nanoislands. Both of these magnetic adatoms exhibit stationary out-of-plane spin-polarization due to their direct exchange interaction with the substrate, but the sign of the exchange coupling between electron states of the adatom and the surface state… ▽ More We have used spin-polarized scanning tunneling spectroscopy to observe the spin-polarization state of individual Fe and Cr atoms adsorbed onto Co nanoislands. Both of these magnetic adatoms exhibit stationary out-of-plane spin-polarization due to their direct exchange interaction with the substrate, but the sign of the exchange coupling between electron states of the adatom and the surface state of the Co island is opposite for the two: Fe adatoms exhibit parallel spin-polarization to the Co surface state while Cr adatoms exhibit antiparallel spin-polarization. First-principles calculations predict ferromagnetic and antiferromagnetic alignment of the spin moment for individual Fe and Cr adatoms on a Co film, respectively, implying negative spin-polarization for Fe and Cr adatoms over the energy range of the Co surface state. △ Less

Submitted 28 March, 2007; originally announced March 2007.

Comments: 16 pages, 4 figures (included in text) Submitted to PRL

Determination of Interface Atomic Structure and Its Impact on Spin Transport Using Z-Contrast Microscopy and Density-Functional Theory

Authors: Thomas J. Zega, Aubrey T. Hanbicki, Steven C. Erwin, Igor Zutic, George Kioseoglou, Connie H. Li, Berend T. Jonker, Rhonda M. Stroud

Abstract: We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and A… ▽ More We combine Z-contrast scanning transmission electron microscopy with density-functional-theory calculations to determine the atomic structure of the Fe/AlGaAs interface in spin-polarized light-emitting diodes. A 44% increase in spin-injection efficiency occurs after a low-temperature anneal, which produces an ordered, coherent interface consisting of a single atomic plane of alternating Fe and As atoms. First-principles transport calculations indicate that the increase in spin-injection efficiency is due to the abruptness and coherency of the annealed interface. △ Less

Submitted 8 May, 2006; originally announced May 2006.

Comments: 16 pages (including cover), 4 figures

Journal ref: Phys. Rev. Lett. 96, 196101 (2006)

Phase transition at finite temperature in one dimension: Adsorbate ordering in Ba/Si(111)3x2

Authors: Steven C. Erwin, C. Stephen Hellberg

Abstract: We demonstrate that the Ba-induced Si(111)3x2 reconstruction is a physical realization of a one-dimensional antiferromagnetic Ising model with long-range Coulomb interactions. Monte Carlo simulations performed on a corresponding Coulomb-gas model, which we construct based on density-functional calculations, reveal an adsorbate-ordering phase transition at finite temperature. We show numerically… ▽ More We demonstrate that the Ba-induced Si(111)3x2 reconstruction is a physical realization of a one-dimensional antiferromagnetic Ising model with long-range Coulomb interactions. Monte Carlo simulations performed on a corresponding Coulomb-gas model, which we construct based on density-functional calculations, reveal an adsorbate-ordering phase transition at finite temperature. We show numerically that this unusual one-dimensional phase transition should be detectable by low-energy electron diffraction. △ Less

Submitted 18 April, 2005; originally announced April 2005.

Comments: 11 pages + 4 figures. Surf. Sci. Lett. (in press)

Theory of spin-polarized transport in semiconductor heterojunctions: Proposal for spin injection and detection in silicon

Authors: Igor Zutic, Jaroslav Fabian, Steven C. Erwin

Abstract: Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by develo** a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong mo… ▽ More Spin injection and detection in silicon is a difficult problem, in part because the weak spin-orbit coupling and indirect gap preclude using standard optical techniques. We propose two ways to overcome this difficulty, and illustrate their operation by develo** a model for spin-polarized transport across a heterojunction. We find that equilibrium spin polarization of holes leads to a strong modification of the spin and charge dynamics of electrons, and we show how the symmetry properties of the charge current can be exploited to detect spin injection in silicon using currently available techniques. △ Less

Submitted 22 December, 2004; v1 submitted 21 December, 2004; originally announced December 2004.

Comments: 4 pages, 4 figures, added footnote

Journal ref: Phys. Rev. Lett. 97, 026602 (2006)

Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers

Authors: R. P. Panguluri, Changgan Zeng, H. H. Weitering, J. M. Sullivan, S. C. Erwin, B. Nadgorny

Abstract: Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition… ▽ More Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition, we calculate the spin polarization of bulk Mn5Ge3 in the diffusive and ballistic regimes using density-functional theory. The measured spin polarization, Pc=43+/-5% is compared to our theoretical estimates, PDFT=10+/-5% and 35+/-5% in the ballistic and diffusive limits respectively. △ Less

Submitted 30 June, 2004; originally announced July 2004.

Comments: 13 pages, 3 figures

Tailoring ferromagnetic chalcopyrites

Authors: Steven C. Erwin, Igor Zutic

Abstract: If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that band gaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and band gaps are related in magnetic semicon… ▽ More If magnetic semiconductors are ever to find wide application in real spintronic devices, their magnetic and electronic properties will require tailoring in much the same way that band gaps are engineered in conventional semiconductors. Unfortunately, no systematic understanding yet exists of how, or even whether, properties such as Curie temperatures and band gaps are related in magnetic semiconductors. Here we explore theoretically these and other relationships within 64 members of a single materials class, the Mn-doped II-IV-V2 chalcopyrites, three of which are already known experimentally to be ferromagnetic semiconductors. Our first-principles results reveal a variation of magnetic properties across different materials that cannot be explained by either of the two dominant models of ferromagnetism in semiconductors. Based on our results for structural, electronic, and magnetic properties, we identify a small number of new stable chalcopyrites with excellent prospects for ferromagnetism. △ Less

Submitted 26 March, 2004; v1 submitted 9 January, 2004; originally announced January 2004.

Comments: 6 pages with 4 figures, plus 3 supplementary figures; to appear in Nature Materials

Journal ref: Nature Materials 3, 410-414 (2004)

Self-Do** of Gold Chains on Silicon: A New Structural Model for Si(111)5x2-Au

Authors: Steven C. Erwin

Abstract: A new structural model for the Si(111)5x2-Au reconstruction is proposed and analyzed using first-principles calculations. The basic model consists of a "double honeycomb chain" decorated by Si adatoms. The 5x1 periodicity of the honeycomb chains is doubled by the presence of a half-occupied row of Si atoms that partially rebonds the chains. Additional adatoms supply electrons that dope the paren… ▽ More A new structural model for the Si(111)5x2-Au reconstruction is proposed and analyzed using first-principles calculations. The basic model consists of a "double honeycomb chain" decorated by Si adatoms. The 5x1 periodicity of the honeycomb chains is doubled by the presence of a half-occupied row of Si atoms that partially rebonds the chains. Additional adatoms supply electrons that dope the parent band structure and stabilize the period doubling; the optimal do** corresponds to one adatom per four 5x2 cells, in agreement with experiment. All the main features observed in scanning tunneling microscopy and photoemission are well reproduced. △ Less

Submitted 25 September, 2003; originally announced September 2003.

Comments: 4 pages, 4 figures, to appear in Phys. Rev. Lett. (preprint with high quality figures available at http://cst-www.nrl.navy.mil/~erwin/papers/ausi111)

Journal ref: Phys. Rev. Lett. 91, 206101 (2003)

Is manganese-doped diamond a ferromagnetic semiconductor?

Authors: Steven C. Erwin, C. Stephen Hellberg

Abstract: We use density-functional theoretical methods to examine the recent prediction, based on a mean-field solution of the Zener model, that diamond doped by Mn (with spin S=5/2) would be a dilute magnetic semiconductor that remains ferromagnetic well above room temperature. Our findings suggest this to be unlikely, for four reasons: (1) substitutional Mn in diamond has a low-spin S=1/2 ground state;… ▽ More We use density-functional theoretical methods to examine the recent prediction, based on a mean-field solution of the Zener model, that diamond doped by Mn (with spin S=5/2) would be a dilute magnetic semiconductor that remains ferromagnetic well above room temperature. Our findings suggest this to be unlikely, for four reasons: (1) substitutional Mn in diamond has a low-spin S=1/2 ground state; (2) the substitutional site is energetically unfavorable relative to the much larger "divacancy" site; 3) Mn in the divacancy site is an acceptor, but with only hyperdeep levels, and hence the holes are likely to remain localized; (4) the calculated Heisenberg couplings between Mn in nearby divacancy sites are two orders of magnitude smaller than for substitutional Mn in germanium. △ Less

Submitted 14 August, 2003; originally announced August 2003.

Comments: 5 pages, 5 figures

Journal ref: Phys. Rev. B 68, 245206 (2003)

Induced Ge Spin Polarization at the Fe/Ge Interface

Authors: J. W. Freeland, R. H. Kodama, M. Vedpathak, S. C. Erwin, D. J. Keavney, R. Winarski, P. Ryan, R. A. Rosenberg

Abstract: We report direct experimental evidence showing induced magnetic moments on Ge at the interface in an Fe/Ge system. Details of the x-ray magnetic circular dichroism and resonant magnetic scattering at the Ge L edge demonstrate the presence of spin-polarized {\it s} states at the Fermi level, as well as {\it d} character moments at higher energy, which are both oriented antiparallel to the moment… ▽ More We report direct experimental evidence showing induced magnetic moments on Ge at the interface in an Fe/Ge system. Details of the x-ray magnetic circular dichroism and resonant magnetic scattering at the Ge L edge demonstrate the presence of spin-polarized {\it s} states at the Fermi level, as well as {\it d} character moments at higher energy, which are both oriented antiparallel to the moment of the Fe layer. Use of the sum rules enables extraction of the L/S ratio, which is zero for the {\it s} part and $\sim0.5$ for the {\it d} component. These results are consistent with layer-resolved electronic structure calculations, which estimate the {\it s} and {\it d} components of the Ge moment are anti-parallel to the Fe {\it 3d} moment and have a magnitude of $\sim0.01 μ_B$. △ Less

Submitted 25 July, 2003; v1 submitted 25 July, 2003; originally announced July 2003.

Comments: 4 pages, 5 figures, submitted to Phys. Rev. Lett

Cross-sectional STM of Mn-doped GaAs: theory and experiment

Authors: J. M. Sullivan, G. I. Boishin, L. J. Whitman, A. T. Hanbicki, B. T. Jonker, S. C. Erwin

Abstract: We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on… ▽ More We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on detailed comparisons of the simulated and experimental images, we identify three types of Mn configurations imaged at the surface: (1) single Mn substitutionals, (2) pairs of Mn substitutionals, and (3) complexes of Mn substitutionals and interstitials. △ Less

Submitted 8 July, 2003; originally announced July 2003.

Comments: 7 journal pages, 6 figures, (preprint with high quality figures available at http://cst-www.nrl.navy.mil/~erwin/mngaasstm/)

Journal ref: Phys. Rev. B 68, 235324 (2003) (6 pages)

Toward one-band superconductivity in MgB2

Authors: Steven C. Erwin, I. I. Mazin

Abstract: The two-gap model for superconductivity in MgB2 predicts that interband impurity scattering should be pair breaking, reducing the critical temperature. This is perhaps the only prediction of the model that has not been confirmed experimentally. It was previously shown theoretically that common substitutional impurities lead to negligible interband scattering - if the lattice is assumed not to di… ▽ More The two-gap model for superconductivity in MgB2 predicts that interband impurity scattering should be pair breaking, reducing the critical temperature. This is perhaps the only prediction of the model that has not been confirmed experimentally. It was previously shown theoretically that common substitutional impurities lead to negligible interband scattering - if the lattice is assumed not to distort. Here we report theoretical results showing that certain impurities can indeed produce lattice distortions sufficiently large to create measurable interband scattering. On this basis, we predict that isoelectronic codo** with Al and Na will provide a decisive test of the two-gap model. △ Less

Submitted 25 September, 2003; v1 submitted 21 April, 2003; originally announced April 2003.

Comments: 4 pages, 2 figures, to appear in Phys. Rev. B

Journal ref: Phys. Rev. B 68, 132505 (2003)

Epitaxial Growth of the Diluted Magnetic Semiconductors CryGe1-y and CryMnxGe1-x-y

Authors: G. Kioseoglou, A. T. Hanbicki, C. H. Li, S. C. Erwin, R. Goswami, B. T. Jonker

Abstract: We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations emp… ▽ More We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p-type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (y < 0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization. △ Less

Submitted 12 February, 2003; originally announced February 2003.

Comments: 4 pages, 4 figures, submitted to Applied Physics Letters

Journal ref: Appl. Phys. Lett. 84, 1725 (2004)

Theory of dopants and defects in Co-doped TiO2 anatase

Authors: James M. Sullivan, Steven C. Erwin

Abstract: We report first-principles microscopic calculations of the formation energy, electrical activity, and magnetic moment of Co dopants and a variety of native defects in TiO2 anatase. Using these results, we use equilibrium thermodynamics to predict the resulting carrier concentration, the average magnetic moment per Co, and the dominant oxidation state of Co. The predicted values are in good agree… ▽ More We report first-principles microscopic calculations of the formation energy, electrical activity, and magnetic moment of Co dopants and a variety of native defects in TiO2 anatase. Using these results, we use equilibrium thermodynamics to predict the resulting carrier concentration, the average magnetic moment per Co, and the dominant oxidation state of Co. The predicted values are in good agreement with experiment under the assumption of O-poor growth conditions. In this regime, a substantial fraction of Co dopants occupy interstitial sites as donors. The incomplete compensation of these donors by substitutional Co acceptors then leads to n-type behavior, as observed experimentally. △ Less

Submitted 4 February, 2003; v1 submitted 26 November, 2002; originally announced November 2002.

Comments: 8 pages, 3 figures, 1 table, revised

Journal ref: Phys. Rev. B 67, 144415 (2003) (7 pages)

Self-compensation in manganese-doped ferromagnetic semiconductors

Authors: Steven C. Erwin, A. G. Petukhov

Abstract: We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band… ▽ More We present a theory of interstitial Mn in Mn-doped ferromagnetic semiconductors. Using density-functional theory, we show that under the non-equilibrium conditions of growth, interstitial Mn is easily formed near the surface by a simple low-energy adsorption pathway. In GaAs, isolated interstitial Mn is an electron donor, each compensating two substitutional Mn acceptors. Within an impurity-band model, partial compensation promotes ferromagnetic order below the metal-insulator transition, with the highest Curie temperature occurring for 0.5 holes per substitutional Mn. △ Less

Submitted 13 September, 2002; originally announced September 2002.

Comments: 4 pages, 3 figures, to appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 89, 227201 (2002)

First-principles study of nucleation, growth, and interface structure of Fe/GaAs

Authors: Steven C. Erwin, Sung-Hoon Lee, Matthias Scheffler

Abstract: We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more,… ▽ More We use density-functional theory to describe the initial stages of Fe film growth on GaAs(001), focusing on the interplay between chemistry and magnetism at the interface. Four features appear to be generic: (1) At submonolayer coverages, a strong chemical interaction between Fe and substrate atoms leads to substitutional adsorption and intermixing. (2) For films of several monolayers and more, atomically abrupt interfaces are energetically favored. (3) For Fe films over a range of thicknesses, both Ga- and As-adlayers dramatically reduce the formation energies of the films, suggesting a surfactant-like action. (4) During the first few monolayers of growth, Ga or As atoms are likely to be liberated from the interface and diffuse to the Fe film surface. Magnetism plays an important auxiliary role for these processes, even in the dilute limit of atomic adsorption. Most of the films exhibit ferromagnetic order even at half-monolayer coverage, while certain adlayer-capped films show a slight preference for antiferromagnetic order. △ Less

Submitted 27 March, 2002; originally announced March 2002.

Comments: 11 two-column pages, 12 figures, to appear in Phys. Rev. B

Journal ref: Phys. Rev. B 65, 205422 (2002).

First-principles study of band offsets in ferromagnetic semiconductor heterojunctions

Authors: J. M. Sullivan, S. C. Erwin

Abstract: We report valence and conduction band alignments and offsets for heterojunctions between CdCr2Se4, an n-type ferromagnetic semiconductor, and the non-magnetic materials Si and GaAs, evaluated using density functional theory. We explore numerically the impact of different interface features on the type of band alignment and the magnitude of the offsets. For example, we find it is energetically fa… ▽ More We report valence and conduction band alignments and offsets for heterojunctions between CdCr2Se4, an n-type ferromagnetic semiconductor, and the non-magnetic materials Si and GaAs, evaluated using density functional theory. We explore numerically the impact of different interface features on the type of band alignment and the magnitude of the offsets. For example, we find it is energetically favorable to deplete Cr atoms from the layers at the interface; this also leads to band alignments smaller in magnitude compared to those obtained for Cr-rich interfaces and ideal for electrical spin-injection into either Si or Ga-terminated GaAs substrates. △ Less

Submitted 22 October, 2001; originally announced October 2001.

Comments: 7 pages, 9 figures, submitted to Physical Review B

Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112): Formalism

Authors: S. C. Erwin, A. A. Baski, L. J. Whitman, R. E. Rudd

Abstract: We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental obs… ▽ More We describe in greater detail the exactly solvable microscopic model we have developed for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system (Phys. Rev. Lett., to appear). The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer. △ Less

Submitted 12 July, 1999; v1 submitted 12 May, 1999; originally announced May 1999.

Comments: 4 pages, 4 figures, to appear in Phys. Rev. Lett; this version includes a 4-page appendix giving the full solution of the Frenkel-Kontorova model

Journal ref: Phys. Rev. Lett. 83, 1818 (1999)

Strongly Correlated Electrons on a Silicon Surface: Theory of a Mott Insulator

Authors: C. Stephen Hellberg, Steven C. Erwin

Abstract: We demonstrate theoretically that the electronic ground state of the potassium-covered Si(111)-B surface is a Mott insulator, explicitly contradicting band theory but in good agreement with recent experiments. We determine the physical structure by standard density-functional methods, and obtain the electronic ground state by exact diagonalization of a many-body Hamiltonian. The many-body conduc… ▽ More We demonstrate theoretically that the electronic ground state of the potassium-covered Si(111)-B surface is a Mott insulator, explicitly contradicting band theory but in good agreement with recent experiments. We determine the physical structure by standard density-functional methods, and obtain the electronic ground state by exact diagonalization of a many-body Hamiltonian. The many-body conductivity reveals a Brinkman-Rice metal-insulator transition at a critical interaction strength; the calculated interaction strength is well above this critical value. △ Less

Submitted 3 December, 1998; originally announced December 1998.

Comments: 4 pages; 4 figures included in text; Revtex

Theory of the "honeycomb chain-channel" reconstruction of Si(111)3x1

Authors: Steven C. Erwin, Hanno H. Weitering

Abstract: First-principles electronic-structure methods are used to study a structural model for Ag/Si(111)3x1 recently proposed on the basis of transmission electron diffraction data. The fully relaxed geometry for this model is far more energetically favorable than any previously proposed, partly due to the unusual formation of a Si double bond in the surface layer. The calculated electronic properties… ▽ More First-principles electronic-structure methods are used to study a structural model for Ag/Si(111)3x1 recently proposed on the basis of transmission electron diffraction data. The fully relaxed geometry for this model is far more energetically favorable than any previously proposed, partly due to the unusual formation of a Si double bond in the surface layer. The calculated electronic properties of this model are in complete agreement with data from angle-resolved photoemission and scanning tunneling microscopy. △ Less

Submitted 31 July, 1998; v1 submitted 30 July, 1998; originally announced July 1998.

Comments: 4 pages, 4 figures, submitted to Phys. Rev. Lett (the ugly postscript error on page 4 has now been repaired)

Journal ref: Phys. Rev. Lett. 81, 2296 (1998)

Important role of alkali atoms in A4C60

Authors: O. Gunnarsson, S. C. Erwin, E. Koch, R. M. Martin

Abstract: We show that hop** via the alkali atoms plays an important role for the t1u band of A4C60 (A=K, Rb), in strong contrast to A3C60. Thus the t1u band is broadened by more than 40 % by the presence of the alkali atoms. The difference between A4C60 and A3C60 is in particular due to the less symmetric location of the alkali atoms in A4C60. We show that hop** via the alkali atoms plays an important role for the t1u band of A4C60 (A=K, Rb), in strong contrast to A3C60. Thus the t1u band is broadened by more than 40 % by the presence of the alkali atoms. The difference between A4C60 and A3C60 is in particular due to the less symmetric location of the alkali atoms in A4C60. △ Less

Submitted 19 January, 1997; originally announced January 1997.

Comments: 5 pages, revtex, 2 figures, submitted to Phys. Rev. B more information at http://www.mpi-stuttgart.mpg.de/dokumente/andersen/fullerene/

Journal ref: Phys. Rev. B 57, 2159 (1998)

Reformulation of the LDA+U method for a local orbital basis

Authors: W. E. Pickett, S. C. Erwin, E. C. Ethridge

Abstract: We present a new approach to the evaluation of the on-site repulsion energy U for use in the LDA+U method of Anisimov and collaborators. Our objectives are to make the method more firmly based, to concentrate primarily on ground state properties rather than spectra, and to test the method in cases where only modest changes in orbital occupations are expected, as well as for highly correlated mat… ▽ More We present a new approach to the evaluation of the on-site repulsion energy U for use in the LDA+U method of Anisimov and collaborators. Our objectives are to make the method more firmly based, to concentrate primarily on ground state properties rather than spectra, and to test the method in cases where only modest changes in orbital occupations are expected, as well as for highly correlated materials. Because of these objectives, we employ a differential definition of U. We also define a matrix U, which we find is very dependent on the environment of the atom in question. The formulation is applied to evaluate U for transition metal monoxides from VO to NiO using a local orbital basis set. The resulting values of U are typically only 40-65% as large as values currently in use. We evaluate the U matrix for the e_g and t_{2g} subshells in paramagnetic FeO, and illustrate the very different charge response of the e_g and t_{2g} states. The sensitivity of the method to the choice of the d orbitals, and to the basis set in general, is discussed. △ Less

Submitted 6 December, 1996; v1 submitted 27 November, 1996; originally announced November 1996.

Comments: 6 figures

Structure and Stability of Si(114)-(2x1)

Authors: Steven C. Erwin, Alison A. Baski, Lloyd J. Whitman

Abstract: We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruction. We propose a complete model for the reconstructed surface based on scanning tunneling microscopy images and first-principles total-energy calculations. The structure and stability of Si(114)-(2x1) arises from a b… ▽ More We describe a recently discovered stable planar surface of silicon, Si(114). This high-index surface, oriented 19.5 degrees away from (001) toward (111), undergoes a 2x1 reconstruction. We propose a complete model for the reconstructed surface based on scanning tunneling microscopy images and first-principles total-energy calculations. The structure and stability of Si(114)-(2x1) arises from a balance between surface dangling bond reduction and surface stress relief, and provides a key to understanding the morphology of a family of surfaces oriented between (001) and (114). △ Less

Submitted 28 June, 1996; originally announced June 1996.

Comments: REVTeX, 4 pages + 3 figures. A preprint with high-resolution figures is available at http://cst-www.nrl.navy.mil/papers/si114.ps . To be published in Phys. Rev. Lett

Report number: NRL/JA/6690-96-0005

Journal ref: Phys. Rev. Lett. 77, 687 (1996)

Metastability of NbN in the ordered vacancy NbO phase

Authors: E. C. Ethridge, S. C. Erwin, W. E. Pickett

Abstract: A metastable phase of NbN with superconducting Tc=16.4 K was reported recently by Treece and collaborators. The reported structure of the thin film sample deviates from the rocksalt (B1) NbN structure with 25% ordered vacancies on each sublattice (space group Pm3m) and a lattice constant of 4.442 Angstroms. Using full potential electronic structure methods, we contrast the electronic structure w… ▽ More A metastable phase of NbN with superconducting Tc=16.4 K was reported recently by Treece and collaborators. The reported structure of the thin film sample deviates from the rocksalt (B1) NbN structure with 25% ordered vacancies on each sublattice (space group Pm3m) and a lattice constant of 4.442 Angstroms. Using full potential electronic structure methods, we contrast the electronic structure with that of B1 NbN. The calculated energy, 1.00 eV/molecule higher than B1 NbN, and calculated lattice constant of 4.214 Angstroms indicate that the new phase must be something other than the ordered stoichiometric Pm3m phase. △ Less

Submitted 24 May, 1995; originally announced May 1995.

Comments: REVTeX, 11 pages, 4 Postscript figures

Commensurate and modulated magnetic phases in orthorhombic A1C60

Authors: E. J. Mele, G. V. Krishna, S. C. Erwin

Abstract: Competing magnetically ordered structures in polymerized orthorhombic A1C60 are studied. A mean-field theory for the equilibrium phases is developed using an Ising model and a classical Heisenberg model to describe the competition between inter- and intra-chain magnetic order in the solid. In the Ising model, the limiting commensurate one-dimensional and three-dimensional phases are separated by… ▽ More Competing magnetically ordered structures in polymerized orthorhombic A1C60 are studied. A mean-field theory for the equilibrium phases is developed using an Ising model and a classical Heisenberg model to describe the competition between inter- and intra-chain magnetic order in the solid. In the Ising model, the limiting commensurate one-dimensional and three-dimensional phases are separated by a commensurate three-sublattice state and by two sectors containing higher-order commensurate phases. For the Heisenberg model the quasi-1D phase is never the equilibrium state; instead the 3D commensurate phases exhibits a transition to a continuum of coplanar spiral magnetic phases. △ Less

Submitted 2 December, 1994; originally announced December 1994.

Comments: 11 pages REVTeX 3.0 plus 4 figures appended