Showing 1–46 of 46 results for author: Eroms, J

Circular THz ratchets in a 2D-modulated Dirac system

Authors: M. Hild, I. Yahniuk, L. E. Golub, J. Amann, J. Eroms, D. Weiss, K. Watanabe, T. Taniguchi, S. D. Ganichev

Abstract: We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose directio… ▽ More We report on the observation of the circular ratchet effect excited by terahertz laser radiation in a specially designed two-dimensional metamaterial consisting of a graphene monolayer deposited on a graphite gate patterned with an array of triangular antidots. We show that a periodically driven Dirac fermion system with spatial asymmetry converts the a.c. power into a d.c. current, whose direction reverses when the radiation helicity is switched. The circular ratchet effect is demonstrated for room temperature and a radiation frequency of 2.54 THz. It is shown that the ratchet current magnitude can be controllably tuned by the patterned and uniform back gate voltages. The results are analyzed in the light of the developed microscopic theory considering electronic and plasmonic mechanisms of the ratchet current formation. △ Less

Submitted 27 February, 2024; originally announced February 2024.

Comments: 10 pages, 8 figures, 2 tables

Terahertz ratchet in graphene 2D metamaterial formed by a patterned gate with an antidot arrayd

Authors: I. Yahniuk, M. Hild, L. E. Golub, J. Amann, J. Eroms, D. Weiss, Wun-Hao Kang, Ming-Hao Liu, K. Watanabe, T. Taniguchi, S. D. Ganichev

Abstract: We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the… ▽ More We report the observation of the terahertz-induced ratchet effect in graphene-based two-dimensional (2D) metamaterials. The metamaterial consists of a graphite gate patterned with an array of triangular antidots placed under a graphene monolayer. We show that the ratchet current appears due to the noncentrosymmetry of the periodic structure unit cell. The ratchet current is generated owing to the combined action of a spatially periodic in-plane electrostatic potential and a periodically modulated radiation electric field caused by near-field diffraction. The magnitude and direction of the ratchet current are shown to be controlled by voltages applied to both back and patterned gates, which change the lateral asymmetry, carrier type and density. The phenomenological and microscopic theories of ratchet effects in graphene-based 2D metamaterials are developed. The experimental data are discussed in the light of the theory based on the solution of the Boltzmann kinetic equation and the calculated electrostatic potential profile. The theory describes well all the experimental results and shows that the observed ratchet current consists of the Seebeck thermoratchet contribution as well as the linear contribution, which is sensitive to the orientation of the radiation electric field vector with respect to the triangles. △ Less

Submitted 6 February, 2024; originally announced February 2024.

Comments: 14 pages, 13 figures

Nonlinear intensity dependence of ratchet currents induced by terahertz laser radiation in bilayer graphene with asymmetric periodic grating gates

Authors: Erwin Mönch, Stefan Hubmann, Ivan Yahniuk, Sophia Schweiss, Vasily V. Bel'kov, Leonid E. Golub, Robin Huber, Jonathan Eroms, Kenji Watanabe, Takashi Taniguchi, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be… ▽ More We report on the observation of a nonlinear intensity dependence of the terahertz radiation induced ratchet effects in bilayer graphene with asymmetric dual grating gate lateral lattices. These nonlinear ratchet currents are studied in structures of two designs with dual grating gate fabricated on top of encapsulated bilayer graphene and beneath it. The strength and sign of the photocurrent can be controllably varied by changing the bias voltages applied to individual dual grating subgates and the back gate. The current consists of contributions insensitive to the radiation's polarization state, defined by the orientation of the radiation electric field vector with respect to the dual grating gate metal stripes, and the circular ratchet sensitive to the radiation helicity. We show that intense terahertz radiation results in a nonlinear intensity dependence caused by electron gas heating. At room temperature the ratchet current saturates at high intensities of the order of hundreds to several hundreds of kWcm$^{-2}$. At $T = 4 {\rm K}$, the nonlinearity manifests itself at intensities that are one or two orders of magnitude lower, moreover, the photoresponse exhibits a complex dependence on the intensity, including a saturation and even a change of sign with increasing intensity. This complexity is attributed to the interplay of the Seebeck ratchet and the dynamic carrier density redistribution, which feature different intensity dependencies and a nonlinear behavior of the sample's conductivity induced by electron gas heating. Our study demonstrates that graphene-based asymmetric dual grating gate devices can be used as terahertz detectors at room temperature over a wide dynamic range, spanning many orders of magnitude of terahertz radiation power. Therefore, their integration together with current-driven read-out electronics is attractive for the operation with high-power pulsed sources. △ Less

Submitted 27 June, 2023; originally announced June 2023.

Comments: 11 pages, 13 figures

Cyclotron- and magnetoplasmon resonances in bilayer graphene ratchets

Authors: Erwin Mönch, Sergey O. Potashin, Katja Lindner, Ivan Yahniuk, Leonid E. Golub, Valentin Yu. Kachorovskii, Vassily V. Bel'kov, Robin Huber, Kenji Watanabe, Takashi Taniguchi, Jonathan Eroms, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by e… ▽ More We report on a tunable - by magnetic field and gate voltage - conversion of terahertz radiation into a dc current in spatially modulated bilayer graphene. We experimentally demonstrate that the underlying physics is related to the so-called ratchet effect. Our key findings are the direct observation of a sharp cyclotron resonance in the photocurrent and the demonstration of two effects caused by electron-electron interaction: the plasmonic splitting of the resonance due to long-range Coulomb coupling and the partial suppression of its second harmonic due to fast interparticle collisions. We develop a theory which perfectly fits our data. We argue that the ratchet current is generated in the hydrodynamic regime of non-ideal electron liquid. △ Less

Submitted 17 August, 2022; originally announced August 2022.

Comments: 13 pages, 10 figures

Circular polarization immunity of the cyclotron resonance photoconductivity in two-dimensional electron systems

Authors: Erwin Mönch, Philipp Euringer, Georg-Maximilian Hüttner, Ivan A. Dmitriev, Dieter Schuh, Marina Marocko, Jonathan Eroms, Dominique Bougeard, Dieter Weiss, Sergey D. Ganichev

Abstract: Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for… ▽ More Studying the cyclotron resonance (CR)-induced photoconductivity in GaAs and HgTe two-dimensional electron structures, we observed an anomalous photoresponse for the CR-inactive geometry being of almost the same magnitude as the CR-active one. This observation conflicts with simultaneous transmission measurements and contradicts the conventional theory of CR which predicts no resonant response for the CR-inactive geometry. We provide a possible route to explain this fundamental failure of the conventional description of light-matter interaction and discuss a modified electron dynamics near strong impurities that may provide a local near-field coupling of the two helicity modes of the terahertz field at low temperatures. This should result in a CR-enhanced local absorption and, thus, CR photoconductivity for both magnetic field polarities. △ Less

Submitted 15 June, 2022; originally announced June 2022.

Comments: 21 pages, 20 figures

THz radiation induced circular Hall effect in graphene

Authors: S. Candussio, S. Bernreuter, T. Rockinger, K. Watanabe, T. Taniguchi, J. Eroms, I. A. Dmitriev, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radiation helicity. The observed dc Hall effect manifests the time inversion symmetry breaking induced by circularly polarized terahertz radiation in the a… ▽ More We report on the observation of the circular transversal terahertz photoconductivity in monolayer graphene supplied by a back gate. The photoconductivity response is caused by the free carrier absorption and reverses its sign upon switching the radiation helicity. The observed dc Hall effect manifests the time inversion symmetry breaking induced by circularly polarized terahertz radiation in the absence of a magnetic field. For low gate voltages, the photosignal is found to be proportional to the radiation intensity and can be ascribed to the alignment of electron momenta by the combined action of THz and static electric fields as well as by the dynamic heating and cooling of the electron gas. Strikingly, at high gate voltages, we observe that the linear-in-intensity Hall photoconductivity vanishes; the photoresponse at low intensities becomes superlinear and varies with the square of the radiation intensity. We attribute this behavior to the interplay of the second- and fourth-order effects in the radiation electric field which has not been addressed theoretically so far and requires additional studies. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Comments: 8 figures

Ratchet effect in spatially modulated bilayer graphene: Signature of hydrodynamic transport

Authors: Erwin Mönch, Sergey O. Potashin, Katja Lindner, Ivan Yahniuk, Leonid E. Golub, Valentin Yu. Kachorovskii, Vasily V. Bel'kov, Robin Huber, Kenji Watanabe, Takashi Taniguchi, Jonathan Eroms, Dieter Weiss, Sergey D. Ganichev

Abstract: We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as… ▽ More We report on the observation of the ratchet effect -- generation of direct electric current in response to external terahertz (THz) radiation -- in bilayer graphene, where inversion symmetry is broken by an asymmetric dual-grating gate potential. As a central result, we demonstrate that at high temperature, $T = 150~\textrm{K}$, the ratchet current decreases at high frequencies as $ \propto 1/ω^2$, while at low temperature, $T = 4.2~\textrm{K}$, the frequency dependence becomes much stronger $\propto 1/ω^6$. The developed theory shows that the frequency dependence of the ratchet current is very sensitive to the ratio of the electron-impurity and electron-electron scattering rates. The theory predicts that the dependence $1/ω^6$ is realized in the hydrodynamic regime, when electron-electron scattering dominates, while $1/ω^2$ is specific for the drift-diffusion approximation. Therefore, our experimental observation of a very strong frequency dependence reveals the emergence of the hydrodynamic regime. △ Less

Submitted 17 November, 2021; originally announced November 2021.

Comments: 21 pages, 12 figures

Nonlinear intensity dependence of terahertz edge photocurrents in graphene

Authors: S. Candussio, L. E. Golub, S. Bernreuter, T. Jötten, T. Rockinger, K. Watanabe, T. Taniguchi, J. Eroms, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear ed… ▽ More We report on the observation of terahertz radiation induced edge photogalvanic currents in graphene, which are nonlinear in intensity. The increase of the radiation intensities up to MW/cm$^2$ results in a complex nonlinear intensity dependence of the photocurrent. The nonlinearity is controlled by the back gate voltage, temperature and radiation frequency. A microscopic theory of the nonlinear edge photocurrent is developed. Comparison of the experimental data and theory demonstrates that the nonlinearity of the photocurrent is caused by the interplay of two mechanisms, i.e. by direct inter-band optical transitions and Drude-like absorption. Both photocurrents saturate at high intensities, but have different intensity dependencies and saturation intensities. The total photocurrent shows a complex sign-alternating intensity dependence. The functional behaviour of the saturation intensities and amplitudes of both kinds of photogalvanic currents depending on gate voltages, temperature, radiation frequency and polarization is in a good agreement with the developed theory. △ Less

Submitted 2 July, 2021; originally announced July 2021.

Comments: 10 Figures

Journal ref: Phys. Rev. B 104, 155404 (2021)

Brown-Zak and Weiss oscillations in a gate-tunable graphene superlattice: A unified picture of miniband conductivity

Authors: Robin Huber, Max-Niklas Steffen, Martin Drienovsky, Andreas Sandner, Kenji Watanabe, Takashi Taniguchi, Daniela Pfannkuche, Dieter Weiss, Jonathan Eroms

Abstract: Electrons exposed to a two-dimensional (2D) periodic potential and a uniform, perpendicular magnetic field exhibit a fractal, self-similiar energy spectrum known as the Hofstadter butterfly. Recently, related high-temperature quantum oscillations (Brown-Zak oscillations) were discovered in graphene moiré systems, whose origin lie in the repetitive occurrence of extended minibands/magnetic Bloch st… ▽ More Electrons exposed to a two-dimensional (2D) periodic potential and a uniform, perpendicular magnetic field exhibit a fractal, self-similiar energy spectrum known as the Hofstadter butterfly. Recently, related high-temperature quantum oscillations (Brown-Zak oscillations) were discovered in graphene moiré systems, whose origin lie in the repetitive occurrence of extended minibands/magnetic Bloch states at rational fractions of magnetic flux per unit cell giving rise to an increase in band conductivity. In this work, we report on the experimental observation of band conductivity oscillations in an electrostatically defined and gate-tunable graphene superlattice, which are governed both by the internal structure of the Hofstadter butterfly (Brown-Zak oscillations) and by a commensurability relation between the cyclotron radius of electrons and the superlattice period (Weiss oscillations). We obtain a complete, unified description of band conductivity oscillations in two-dimensional superlattices, yielding a detailed match between theory and experiment. △ Less

Submitted 21 June, 2021; originally announced June 2021.

Current-induced one-dimensional diffusion of Co ad-atoms on graphene nanoribbons

Authors: Tobias Preis, Sasha Vrbica, Jonathan Eroms, Jascha Repp, Jan M. van Ruitenbeek

Abstract: One-dimensional diffusion of Co ad-atoms on graphene nanoribbons has been induced and investigated by means of scanning tunnelling microscopy (STM). To this end, the nanoribbons and the Co ad-atoms have been imaged before and after injecting current pulses into the nanoribbons, with the STM tip in direct contact with the ribbon. We observe current-induced motion of the Co atoms along the nanoribbo… ▽ More One-dimensional diffusion of Co ad-atoms on graphene nanoribbons has been induced and investigated by means of scanning tunnelling microscopy (STM). To this end, the nanoribbons and the Co ad-atoms have been imaged before and after injecting current pulses into the nanoribbons, with the STM tip in direct contact with the ribbon. We observe current-induced motion of the Co atoms along the nanoribbons, which is approximately described by a distribution expected for a thermally activated one-dimensional random walk. This indicates that the nanoribbons reach temperatures far beyond 100 K, which is well above the temperature of the underlying Au substrate. This model system can be developed further for the study of electromigration at the single-atom level. △ Less

Submitted 15 June, 2021; originally announced June 2021.

Comments: 11 pages, 4 figures

Journal ref: Nano Letters 21 (2021)

Counterintuitive gate dependence of weak antilocalization in bilayer graphene/WSe$_2$ heterostructures

Authors: Julia Amann, Tobias Völkl, Tobias Rockinger, Denis Kochan, Kenji Watanabe, Takashi Taniguchi, Jaroslav Fabian, Dieter Weiss, Jonathan Eroms

Abstract: Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low field magnetotrans… ▽ More Strong gate control of proximity-induced spin-orbit coupling was recently predicted in bilayer graphene/transition metal dichalcogenides (BLG/TMDC) heterostructures, as charge carriers can easily be shifted between the two graphene layers, and only one of them is in close contact to the TMDC. The presence of spin-orbit coupling can be probed by weak antilocalization (WAL) in low field magnetotransport measurements. When the spin-orbit splitting in such a heterostructure increases with the out of plane electric displacement field $\bar D$, one intuitively expects a concomitant increase of WAL visibility. Our experiments show that this is not the case. Instead, we observe a maximum of WAL visibility around $\bar D=0$. This counterintuitive behaviour originates in the intricate dependence of WAL in graphene on symmetric and antisymmetric spin lifetimes, caused by the valley-Zeeman and Rashba terms, respectively. Our observations are confirmed by calculating spin precession and spin lifetimes from an $8\times 8$ model Hamiltonian of BLG/TMDC. △ Less

Submitted 18 March, 2022; v1 submitted 10 December, 2020; originally announced December 2020.

Comments: Accepted by Phys Rev B

Journal ref: Phys. Rev. B 105, 115425 (2022)

Giant ratchet magneto-photocurrent in graphene lateral superlattices

Authors: S. Hubmann, V. V. Bel'kov, L. E. Golub, V. Yu. Kachorovskii, M. Drienovsky, J. Eroms, D. Weiss, S. D. Ganichev

Abstract: We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current… ▽ More We report on the observation of the magnetic quantum ratchet effect in graphene with a lateral dual-grating top gate (DGG) superlattice. We show that the THz ratchet current exhibits sign-alternating magneto-oscillations due to the Shubnikov-de Haas effect. The amplitude of these oscillations is greatly enhanced as compared to the ratchet effect at zero magnetic field. The direction of the current is determined by the lateral asymmetry which can be controlled by variation of gate potentials in DGG. We also study the dependence of the ratchet current on the orientation of the terahertz electric field (for linear polarization) and on the radiation helicity (for circular polarization). Notably, in the latter case, switching from right- to left-circularly polarized radiation results in an inversion of the photocurrent direction. We demonstrate that most of our observations can be well fitted by the drift-diffusion approximation based on the Boltzmann kinetic equation with the Landau quantization fully encoded in the oscillations of the density of states. △ Less

Submitted 9 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Research 2, 033186 (2020)

Gate-tunable two-dimensional superlattices in graphene

Authors: Robin Huber, Ming-Hao Liu, Szu-Chao Chen, Martin Drienovsky, Andreas Sandner, Kenji Watanabe, Takashi Taniguchi, Klaus Richter, Dieter Weiss, Jonathan Eroms

Abstract: We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our approach can be easily fabricated and implemented in van der Waals stacking procedures allowing flexible use of superlattices with arbitrary geometry. In t… ▽ More We report an efficient technique to induce gate-tunable two-dimensional superlattices in graphene by the combined action of a back gate and a few-layer graphene patterned bottom gate complementary to existing methods. The patterned gates in our approach can be easily fabricated and implemented in van der Waals stacking procedures allowing flexible use of superlattices with arbitrary geometry. In transport measurements on a superlattice with lattice constant $a=40$ nm well pronounced satellite Dirac points and signatures of the Hofstadter butterfly including a non-monotonic quantum Hall response are observed. Furthermore, the experimental results are accurately reproduced in transport simulations and show good agreement with features in the calculated band structure. Overall, we present a comprehensive picture of graphene-based superlattices, featuring a broad range of miniband effects, both in experiment and in theoretical modeling. The presented technique is suitable for studying more advanced geometries which are not accessible by other methods. △ Less

Submitted 19 November, 2020; v1 submitted 16 March, 2020; originally announced March 2020.

Comments: This document is the unedited Author's version of a Submitted Work that was subsequently accepted for publication in Nano Letters, copyright American Chemical Society after peer review. To access the final edited and published work, as well as the Supporting Information, see the journal reference or DOI below

Journal ref: Nano Letters 20, 8046 (2020)

Graphene Nanoribbons on Hexagonal Boron Nitride: Deposition and Transport Characterization

Authors: Tobias Preis, Christian Kick, Andreas Lex, Akimitsu Narita, Yunbin Hu, Kenji Watanabe, Takashi Taniguchi, Klaus Müllen, Dieter Weiss, Jonathan Eroms

Abstract: Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd conta… ▽ More Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V-characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon. △ Less

Submitted 2 May, 2019; v1 submitted 16 October, 2018; originally announced October 2018.

Comments: manuscript accepted by APL

Journal ref: Appl. Phys. Lett. 114, 173101 (2019)

Absence of a giant spin Hall effect in plasma-hydrogenated graphene

Authors: Tobias Völkl, Denis Kochan, Thomas Ebnet, Sebastian Ringer, Daniel Schiermeier, Philipp Nagler, Tobias Korn, Christian Schüller, Jaroslav Fabian, Dieter Weiss, Jonathan Eroms

Abstract: The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hyd… ▽ More The weak spin-orbit interaction in graphene was predicted to be increased, e.g., by hydrogenation. This should result in a sizable spin Hall effect (SHE). We employ two different methods to examine the spin Hall effect in weakly hydrogenated graphene. For hydrogenation we expose graphene to a hydrogen plasma and use Raman spectroscopy to characterize this method. We then investigate the SHE of hydrogenated graphene in the H-bar method and by direct measurements of the inverse SHE. Although a large nonlocal resistance can be observed in the H-bar structure, comparison with the results of the other method indicate that this nonlocal resistance is caused by a non-spin-related origin. △ Less

Submitted 27 September, 2018; originally announced September 2018.

Journal ref: Phys. Rev. B 99, 085401 (2019)

Edge currents driven by terahertz radiation in graphene in quantum Hall regime

Authors: H. Plank, M. V. Durnev, S. Candussio, J. Pernul, K. -M. Dantscher, E. Mönch, A. Sandner, J. Eroms, D. Weiss, V. V. Belkov, S. A. Tarasenko, S. D. Ganichev

Abstract: We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of… ▽ More We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of the external magnetic field, while its magnitude depends on the radiation polarization. The microscopic theory developed in this paper describes well the experimental data. △ Less

Submitted 4 July, 2018; originally announced July 2018.

Spin field-effect transistor action via tunable polarization of the spin injection in a Co/MgO/graphene contact

Authors: Sebastian Ringer, Matthias Rosenauer, Tobias Völkl, Maximilian Kadur, Franz Hopperdietzel, Dieter Weiss, Jonathan Eroms

Abstract: We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the… ▽ More We fabricated a non-local spin valve device with Co-MgO injector/detector tunnel contacts on a graphene spin channel. In this device, the spin polarization of the injector contact can be tuned by both the injector current bias and the gate voltage. The spin polarization can be turned off and even inverted. This behavior enables a spin transistor where the signal is switched off by turning off the spin injection using the field-effect. We propose a model based on a gate-dependent shift of the minimum in the graphene density of states with respect to the tunneling density of states of cobalt, which can explain the observed bias and gate dependence. △ Less

Submitted 24 September, 2018; v1 submitted 21 March, 2018; originally announced March 2018.

Comments: revised version, accepted by APL

Journal ref: Appl. Phys. Lett. 113, 132403 (2018)

Commensurability Oscillations in One-Dimensional Graphene Superlattices

Authors: Martin Drienovsky, Jonas Joachimsmeyer, Andreas Sandner, Ming-Hao Liu, Takashi Taniguchi, Kenji Watanabe, Klaus Richter, Dieter Weiss, Jonathan Eroms

Abstract: We report the experimental observation of commensurability oscillations (COs) in 1D graphene superlattices. The widely tunable periodic potential modulation in hBN encapsulated graphene is generated via the interplay of nanopatterned few layer graphene acting as a local bottom gate and a global Si back gate. The longitudinal magneto-resistance shows pronounced COs, when the sample is tuned into th… ▽ More We report the experimental observation of commensurability oscillations (COs) in 1D graphene superlattices. The widely tunable periodic potential modulation in hBN encapsulated graphene is generated via the interplay of nanopatterned few layer graphene acting as a local bottom gate and a global Si back gate. The longitudinal magneto-resistance shows pronounced COs, when the sample is tuned into the unipolar transport regime. We observe up to six CO minima, providing evidence for a long mean free path despite the potential modulation. Comparison to existing theories shows that small angle scattering is dominant in hBN/graphene/hBN heterostructures. We observe robust COs persisting to temperature exceeding $T=150$ K. At high temperatures, we find deviations from the predicted $T$-dependence, which we ascribe to electron-electron scattering. △ Less

Submitted 6 July, 2018; v1 submitted 31 January, 2018; originally announced February 2018.

Comments: 6 pages, 4 figures + Supplemental Material. Accepted by PRL

Journal ref: Phys. Rev. Lett. 121, 026806 (2018)

Measuring anisotropic spin relaxation in graphene

Authors: Sebastian Ringer, Stefan Hartl, Matthias Rosenauer, Tobias Völkl, Maximilian Kadur, Franz Hopperdietzel, Dieter Weiss, Jonathan Eroms

Abstract: We compare different methods to measure the anisotropy of the spin-lifetime in graphene. In addition to out-of-plane rotation of the ferromagnetic electrodes and oblique spin precession, we present a Hanle experiment where the electron spins precess around either a magnetic field perpendicular to the graphene plane or around an in-plane field. In the latter case, electrons are subject to both in-p… ▽ More We compare different methods to measure the anisotropy of the spin-lifetime in graphene. In addition to out-of-plane rotation of the ferromagnetic electrodes and oblique spin precession, we present a Hanle experiment where the electron spins precess around either a magnetic field perpendicular to the graphene plane or around an in-plane field. In the latter case, electrons are subject to both in-plane and out-of-plane spin relaxation. To fit the data, we use a numerical simulation that can calculate precession with anisotropies in the spin-lifetimes under magnetic fields in any direction. Our data show a small, but distinct anisotropy that can be explained by the combined action of isotropic mechanisms, such as relaxation by the contacts and resonant scattering by magnetic impurities, and an anisotropic Rashba spin-orbit based mechanism. We also assess potential sources of error in all three types of experiment and conclude that the in-plane/out-of-plane Hanle method is most reliable. △ Less

Submitted 11 May, 2018; v1 submitted 17 November, 2017; originally announced November 2017.

Comments: 9 pages, 14 figure + Supplemental Material, revised version accepted for publication by Physical Review B

Journal ref: Phys. Rev. B 97, 205439 (2018)

Terahertz electric field driven electric currents and ratchet effects in graphene

Authors: Sergey D. Ganichev, Dieter Weiss, Jonathan Eroms

Abstract: Terahertz field induced photocurrents in graphene were studied experimentally and by microscopic modeling. Currents were generated by cw and pulsed laser radiation in large area as well as small-size exfoliated graphene samples. We review general symmetry considerations leading to photocurrents depending on linear and circular polarized radiation and then present a number of situations where photo… ▽ More Terahertz field induced photocurrents in graphene were studied experimentally and by microscopic modeling. Currents were generated by cw and pulsed laser radiation in large area as well as small-size exfoliated graphene samples. We review general symmetry considerations leading to photocurrents depending on linear and circular polarized radiation and then present a number of situations where photocurrents were detected. Starting with the photon drag effect under oblique incidence, we proceed to the photogalvanic effect enhancement in the reststrahlen band of SiC and edge-generated currents in graphene. Ratchet effects were considered for in-plane magnetic fields and a structure inversion asymmetry as well as ratchets by non-symmetric patterned top gates. Lastly, we demonstrate that graphene can be used as a fast, broadband detector of terahertz radiation. △ Less

Submitted 17 October, 2017; originally announced October 2017.

Magnetotransport in heterostructures of transition metal dichalcogenides and graphene

Authors: Tobias Völkl, Tobias Rockinger, Martin Drienovsky, Kenji Watanabe, Takashi Taniguchi, Dieter Weiss, Jonathan Eroms

Abstract: We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe$_2$/SiO$_2$ samples we observe mobilities of $\sim$12 000 cm$^2$/Vs. Magnetic field dependent resistance measurements on these samples… ▽ More We use a van-der-Waals pickup technique to fabricate different heterostructures containing WSe$_2$(WS$_2$) and graphene. The heterostructures were structured by plasma etching, contacted by one-dimensional edge contacts and a topgate was deposited. For graphene/WSe$_2$/SiO$_2$ samples we observe mobilities of $\sim$12 000 cm$^2$/Vs. Magnetic field dependent resistance measurements on these samples show a peak in the conductivity at low magnetic field. This dip is attributed to the weak antilocalization (WAL) effect, stemming from spin-orbit coupling. Samples where graphene is encapsulated between WSe$_2$(WS$_2$) and hBN show a much higher mobility of up to $\sim$120 000 cm$^2$/Vs. However, in these samples no WAL peak can be observed. We attribute this to a transition from the diffusive to the quasiballistic regime. At low magnetic field a resistance peak appears, which we ascribe to a size effect, due to boundary scattering. Shubnikov-de Haas oscillations in fully encapsulated samples show all integer filling factors, due to complete lifting of the spin and valley degeneracy. △ Less

Submitted 31 August, 2017; v1 submitted 22 June, 2017; originally announced June 2017.

Comments: Revised version, accepted by Phys Rev B

Journal ref: Phys. Rev. B 96, 125405 (2017)

Few-layer graphene patterned bottom gates for van der Waals heterostructures

Authors: Martin Drienovsky, Andreas Sandner, Christian Baumgartner, Ming-Hao Liu, Takashi Taniguchi, Kenji Watanabe, Klaus Richter, Dieter Weiss, Jonathan Eroms

Abstract: We introduce a method of local gating for van der Waals heterostructures, employing a few-layer graphene patterned bottom gate. Being a member of the 2D material family, few-layer graphene adapts perfectly to the commonly used stacking method. Its versatility regarding patterning as well as its flatness make it an ideal candidate for experiments on locally gated 2D materials. Moreover, in combinat… ▽ More We introduce a method of local gating for van der Waals heterostructures, employing a few-layer graphene patterned bottom gate. Being a member of the 2D material family, few-layer graphene adapts perfectly to the commonly used stacking method. Its versatility regarding patterning as well as its flatness make it an ideal candidate for experiments on locally gated 2D materials. Moreover, in combination with ultra-thin hexagonal boron nitride as an insulating layer, sharp potential steps can be created and the quality of the investigated 2D material can be sustained. To underline the good feasibility and performance, we show results on transport experiments in periodically modulated graphene- boron nitride heterostructures, where the charge carrier density is tuned via locally acting patterned few layer graphene bottom gates and a global back gate. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Terahertz ratchet effects in graphene with a lateral superlattice

Authors: P. Olbrich, J. Kamann, M. König, J. Munzert, L. Tutsch, J. Eroms, D. Weiss, Ming-Hao Liu, L. E. Golub, E. L. Ivchenko, V. V. Popov, D. V. Fateev, K. V. Mashinsky, F. Fromm, Th. Seyller, S. D. Ganichev

Abstract: Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures.… ▽ More Experimental and theoretical studies on ratchet effects in graphene with a lateral superlattice excited by alternating electric fields of terahertz frequency range are presented. A lateral superlatice deposited on top of monolayer graphene is formed either by periodically repeated metal stripes having different widths and spacings or by inter-digitated comb-like dual-grating-gate (DGG) structures. We show that the ratchet photocurrent excited by terahertz radiation and sensitive to the radiation polarization state can be efficiently controlled by the back gate driving the system through the Dirac point as well as by the lateral asymmetry varied by applying unequal voltages to the DGG subgratings. The ratchet photocurrent includes the Seebeck thermoratchet effect as well as the effects of "linear" and "circular" ratchets, sensitive to the corresponding polarization of the driving electromagnetic force. The experimental data are analyzed for the electronic and plasmonic ratchets taking into account the calculated potential profile and the near field acting on carriers in graphene. We show that the photocurrent generation is based on a combined action of a spatially periodic in-plane potential and the spatially modulated light due to the near field effects of the light diffraction. △ Less

Submitted 27 October, 2015; originally announced October 2015.

Journal ref: Phys. Rev. B 93, 075422 (2016)

Ballistic transport in graphene antidot lattices

Authors: Andreas Sandner, Tobias Preis, Christian Schell, Paula Giudici, Kenji Watanabe, Takashi Taniguchi, Dieter Weiss, Jonathan Eroms

Abstract: Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disord… ▽ More Graphene samples can have a very high carrier mobility if influences from the substrate and the environment are minimized. Embedding a graphene sheet into a heterostructure with hexagonal boron nitride (hBN) on both sides was shown to be a particularly efficient way of achieving a high bulk mobility. Nanopatterning graphene can add extra damage and drastically reduce sample mobility by edge disorder. Preparing etched graphene nanostructures on top of an hBN substrate instead of SiO2 is no remedy, as transport characteristics are still dominated by edge roughness. Here we show that etching fully encapsulated graphene on the nanoscale is more gentle and the high mobility can be preserved. To this end, we prepared graphene antidot lattices where we observe magnetotransport features stemming from ballistic transport. Due to the short lattice period in our samples we can also explore the boundary between the classical and the quantum transport regime. △ Less

Submitted 17 September, 2015; originally announced September 2015.

Journal ref: Nano Lett. 15, 8402 (2015)

Towards superlattices: Lateral bipolar multibarriers in graphene

Authors: Martin Drienovsky, Franz-Xaver Schrettenbrunner, Andreas Sandner, Ming-Hao Liu, Fedor Tkatschenko, Klaus Richter, Dieter Weiss, Jonathan Eroms

Abstract: We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn') or the bipolar (np') regime. In the latter pronounce… ▽ More We report on transport properties of monolayer graphene with a laterally modulated potential profile, employing striped top gate electrodes with spacings of 100 nm to 200 nm. Tuning of top and back gate voltages gives rise to local charge carrier density disparities, enabling the investigation of transport properties either in the unipolar (nn') or the bipolar (np') regime. In the latter pronounced single- and multibarrier Fabry-Perot (FP) resonances occur. We present measurements of different devices with different numbers of top gate stripes and spacings. The data are highly consistent with a phase coherent ballistic tight binding calculation and quantum capacitance model, whereas a superlattice effect and modification of band structure can be excluded. △ Less

Submitted 14 April, 2014; v1 submitted 9 January, 2014; originally announced January 2014.

Comments: revised version

Journal ref: Phys. Rev. B 89, 115421 (2014)

A direct comparison of CVD-grown and exfoliated MoS2 using optical spectroscopy

Authors: G. Plechinger, J. Mann, E. Preciado, D. Barroso, A. Nguyen, J. Eroms, C. Schüller, L. Bartels, T. Korn

Abstract: MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by chemical vapor deposition (CVD) and MoS$_2$ flakes prepared by mechanical exfoliation from natural bulk crystal. Raman spectroscopy measurements show differences betwe… ▽ More MoS2 is a highly interesting material system, which exhibits a crossover from an indirect band gap in the bulk crystal to a direct gap for single layers. Here, we perform a direct comparison between large-area MoS$_2$ films grown by chemical vapor deposition (CVD) and MoS$_2$ flakes prepared by mechanical exfoliation from natural bulk crystal. Raman spectroscopy measurements show differences between the in-plane and out-of-plane phonon mode positions in CVD-grown and exfoliated MoS$_2$. Photoluminescence (PL) map** reveals large regions in the CVD-grown films that emit strong PL at room temperature, and low-temperature PL scans demonstrate a large spectral shift of the A exciton emission as a function of position. Polarization-resolved PL measurements under near-resonant excitation conditions show a strong circular polarization of the PL, corresponding to a valley polarization. △ Less

Submitted 4 November, 2013; v1 submitted 31 October, 2013; originally announced October 2013.

Journal ref: Semicond. Sci. Technol. 29 064008 (2014)

Weak localization and Raman study of anisotropically etched graphene antidots

Authors: Florian Oberhuber, Stefan Blien, Stefanie Heydrich, Fatemeh Yaghobian, Tobias Korn, Christian Schüller, Christoph Strunk, Dieter Weiss, Jonathan Eroms

Abstract: We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot reso… ▽ More We study a crystallographic etching process of graphene nanostructures where zigzag edges can be prepared selectively. The process involves heating exfoliated single-layer graphene samples with a predefined pattern of antidot arrays in an argon atmosphere at 820 C, which selectively removes carbon atoms located on armchair sites. Atomic force microscopy and scanning electron microscopy cannot resolve the structure on the atomic scale. However, weak localization and Raman measurements - which both probe intervalley scattering at armchair edges - indicate that zigzag regions are enhanced compared to samples prepared with oxygen based reactive ion etching only. △ Less

Submitted 9 October, 2013; v1 submitted 14 August, 2013; originally announced August 2013.

Comments: 5 pages, 6 figures, few references added in v2

Journal ref: Appl. Phys. Lett. 103, 143111 (2013)

Ultrafast graphene-based broadband THz detector

Authors: Martin Mittendorff, Stephan Winnerl, Josef Kamann, Jonathan Eroms, Dieter Weiss, Harald Schneider, Manfred Helm

Abstract: We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measu… ▽ More We present an ultrafast graphene-based detector, working in the THz range at room temperature. A logarithmic-periodic antenna is coupled to a graphene flake that is produced by exfoliation on SiO2. The detector was characterized with the free-electron laser FELBE for wavelengths from 8 um to 220 um. The detector rise time is 50 ps in the wavelength range from 30 um to 220 um. Autocorrelation measurements exploiting the nonlinear photocurrent response at high intensities reveal an intrinsic response time below 10 ps. This detector has a high potential for characterizing temporal overlaps, e. g. in two-color pump-probe experiments. △ Less

Submitted 23 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 103, 021113 (2013)

Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC

Authors: Bastian Birkner, Daniel Pachniowski, Andreas Sandner, Markus Ostler, Thomas Seyller, Jaroslav Fabian, Mariusz Ciorga, Dieter Weiss, Jonathan Eroms

Abstract: We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, re… ▽ More We present results of non-local and three terminal (3T) spin precession measurements on spin injection devices fabricated on epitaxial graphene on SiC. The measurements were performed before and after an annealing step at 150 degrees Celsius for 15 minutes in vacuum. The values of spin relaxation length L_s and spin relaxation time tau_s obtained after annealing are reduced by a factor 2 and 4, respectively, compared to those before annealing. An apparent discrepancy between spin diffusion constant D_s and charge diffusion constant D_c can be resolved by investigating the temperature dependence of the g-factor, which is consistent with a model for paramagnetic magnetic moments. △ Less

Submitted 25 February, 2013; v1 submitted 11 October, 2012; originally announced October 2012.

Comments: revised version, incl Supplemental Material, published in Phys Rev B

Journal ref: Phys. Rev. B 87, 081405(R) (2013)

Phase Coherent Transport in Graphene Nanoribbons and Graphene Nanoribbon Arrays

Authors: S. Minke, J. Bundesmann, D. Weiss, J. Eroms

Abstract: We have experimentally investigated quantum interference corrections to the conductivity of graphene nanoribbons at temperatures down to 20 mK studying both weak localization (WL) and universal conductance fluctuations (UCF). Since in individual nanoribbons at millikelvin temperatures the UCFs strongly mask the weak localization feature we employ both gate averaging and ensemble averaging to suppr… ▽ More We have experimentally investigated quantum interference corrections to the conductivity of graphene nanoribbons at temperatures down to 20 mK studying both weak localization (WL) and universal conductance fluctuations (UCF). Since in individual nanoribbons at millikelvin temperatures the UCFs strongly mask the weak localization feature we employ both gate averaging and ensemble averaging to suppress the UCFs. This allows us to extract the phase coherence length from both WL and UCF at all temperatures. Above 1 K, the phase coherence length is suppressed due to Nyquist scattering whereas at low temperatures we observe a saturation of the phase coherence length at a few hundred nanometers, which exceeds the ribbon width, but stays below values typically found in bulk graphene. To better describe the experiments at elevated temperatures, we extend the formula for 1D weak localization in graphene, which was derived in the limit of strong intervalley scattering, to include all elastic scattering rates. △ Less

Submitted 24 September, 2012; v1 submitted 13 August, 2012; originally announced August 2012.

Comments: 8 pages, 6 figures, accepted by PRB

Journal ref: Phys. Rev. B 86, 155403 (2012)

Raman spectroscopy of the interlayer shear mode in few-layer MoS2 flakes

Authors: G. Plechinger, S. Heydrich, J. Eroms, D. Weiss, Schüller, T. Korn

Abstract: Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position… ▽ More Single- and few-layer MoS2 has recently gained attention as an interesting new material system for opto-electronics. Here, we report on scanning Raman measurements on few-layer MoS2 flakes prepared by exfoliation. We observe a Raman mode corresponding to a rigid shearing oscillation of adjacent layers. This mode appears at very low Raman shifts between 20 and 30 relative wavenumbers. Its position strongly depends on the number of layers, which we independently determine using AFM measurements and investigation of the other characteristic Raman modes. Raman spectroscopy of the shear mode therefore is a useful tool to determine the number of layers for few-layer MoS2 flakes. △ Less

Submitted 24 May, 2012; v1 submitted 9 May, 2012; originally announced May 2012.

Comments: 4 pages, 3 figures, submitted to Applied Phys. Lett

Journal ref: Appl. Phys. Lett. 101, 101906 (2012)

Low-temperature photoluminescence of oxide-covered single-layer MoS2

Authors: G. Plechinger, F. -X. Schrettenbrunner, J. Eroms, D. Weiss, C. Schüller, T. Korn

Abstract: We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual as-prepared flakes, can be homogenized by annealing in vacuum, which removes adsorbates from the surface. We use HfO2 and Al2O3 layers prepared by atomic layer deposition to cover… ▽ More We present a photoluminescence study of single-layer MoS2 flakes on SiO2 surfaces. We demonstrate that the luminescence peak position of flakes prepared from natural MoS2, which varies by up to 25 meV between individual as-prepared flakes, can be homogenized by annealing in vacuum, which removes adsorbates from the surface. We use HfO2 and Al2O3 layers prepared by atomic layer deposition to cover some of our flakes. We clearly observe a suppression of the low-energy luminescence peak observed for as-prepared flakes at low temperatures, indicating that this peak originates from excitons bound to surface adsorbates. We also observe different temperature-induced shifts of the luminescence peaks for the oxide-covered flakes. This effect stems from the different thermal expansion coefficients of the oxide layers and the MoS2 flakes. It indicates that the single-layer MoS2 flakes strongly adhere to the oxide layers and are therefore strained. △ Less

Submitted 11 January, 2012; v1 submitted 16 December, 2011; originally announced December 2011.

Comments: 3 pages, 2 figures

Journal ref: Phys. Status Solidi Rapid Research letters 6, No. 3, 126-128 (2012)

Magnetotransport through graphene nanoribbons at high magnetic fields

Authors: S. Minke, S. H. Jhang, J. Wurm, Y. Skourski, J. Wosnitza, C. Strunk, D. Weiss, K. Richter, J. Eroms

Abstract: We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of disorder. In experiment, at high carrier densities we observe Shubnikov-de Haas oscillations and the quantum Hall effect, while at low densitie… ▽ More We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and several types of disorder. In experiment, at high carrier densities we observe Shubnikov-de Haas oscillations and the quantum Hall effect, while at low densities the oscillations disappear and an initially negative magnetoresistance becomes strongly positive at high magnetic fields. The strong resistance increase at very high fields and low carrier densities is tentatively ascribed to a field-induced insulating state in the bulk graphene leads. Comparing numerical results and experiment, we demonstrate that at least edge disorder and bulk short-range impurities are important in our samples. △ Less

Submitted 23 May, 2012; v1 submitted 18 November, 2011; originally announced November 2011.

Comments: 5 pages, 4 figures, revised version to match published version. First author changed her last name from Schmidmeier to Minke

Journal ref: Phys. Rev. B 85, 195432 (2012)

Terahertz radiation driven chiral edge currents in graphene

Authors: J. Karch, C. Drexler, P. Olbrich, M. Fehrenbacher, M. Hirmer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, B. Birkner, J. Eroms, D. Weiss, R. Yakimova, S. Lara-Avila, S. Kubatkin, M. Ostler, T. Seyller, S. D. Ganichev

Abstract: We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which… ▽ More We observe photocurrents induced in single layer graphene samples by illumination of the graphene edges with circularly polarized terahertz radiation at normal incidence. The photocurrent flows along the sample edges and forms a vortex. Its winding direction reverses by switching the light helicity from left- to right-handed. We demonstrate that the photocurrent stems from the sample edges, which reduce the spatial symmetry and result in an asymmetric scattering of carriers driven by the radiation electric field. The developed theory is in a good agreement with the experiment. We show that the edge photocurrents can be applied for determination of the conductivity type and the momentum scattering time of the charge carriers in the graphene edge vicinity. △ Less

Submitted 19 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figure, additional Supplemental Material (3 pages, 1 figure)

Stacking-order dependent transport properties of trilayer graphene

Authors: S. H. Jhang, M. F. Craciun, S. Schmidmeier, S. Tokumitsu, S. Russo, M. Yamamoto, Y. Skourski, J. Wosnitza, S. Tarucha, J. Eroms, C. Strunk

Abstract: We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling f… ▽ More We report markedly different transport properties of ABA- and ABC-stacked trilayer graphenes. Our experiments in double-gated trilayer devices provide evidence that a perpendicular electric field opens an energy gap in the ABC trilayer, while it causes the increase of a band overlap in the ABA trilayer. In a perpendicular magnetic field, the ABA trilayer develops quantum Hall plateaus at filling factors of ν= 2, 4, 6... with a step of Δν= 2, whereas the inversion symmetric ABC trilayer exhibits plateaus at ν= 6 and 10 with 4-fold spin and valley degeneracy. △ Less

Submitted 24 June, 2011; originally announced June 2011.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 84, 161408(R) (2011)

Circular ac Hall Effect

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Zoth, C. Brinsteiner, M. Fehrenbacher, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, R. Yakimova, S. Lara-Avila, S. Kubatkin, S. D. Ganichev

Abstract: We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose si… ▽ More We report the observation of the circular ac Hall effect where the current is solely driven by the crossed ac electric and magnetic fields of circularly polarized radiation. Illuminating an unbiased monolayer sheet of graphene with circularly polarized terahertz radiation at room temperature generates - under oblique incidence - an electric current perpendicular to the plane of incidence, whose sign is reversed by switching the radiation helicity. Alike the classical dc Hall effect, the voltage is caused by crossed electric and magnetic fields which are however rotating with the light's frequency. △ Less

Submitted 12 August, 2010; originally announced August 2010.

Comments: 4 pages, 5 figures

Scanning Raman spectroscopy of graphene antidot lattices: Evidence for systematic p-type do**

Authors: S. Heydrich, M. Hirmer, C. Preis, T. Korn, J. Eroms, D. Weiss, C. Schüller

Abstract: We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffe… ▽ More We have investigated antidot lattices, which were prepared on exfoliated graphene single layers via electron-beam lithography and ion etching, by means of scanning Raman spectroscopy. The peak positions, peak widths and intensities of the characteristic phonon modes of the carbon lattice have been studied systematically in a series of samples. In the patterned samples, we found a systematic stiffening of the G band mode, accompanied by a line narrowing, while the 2D mode energies are found to be linearly correlated with the G mode energies. We interpret this as evidence for p-type do** of the nanostructured graphene. △ Less

Submitted 15 June, 2010; v1 submitted 10 June, 2010; originally announced June 2010.

Journal ref: Appl. Phys. Lett. 97, 043113 (2010)

Photon helicity driven electric currents in graphene

Authors: J. Karch, P. Olbrich, M. Schmalzbauer, C. Brinsteiner, U. Wurstbauer, M. M. Glazov, S. A. Tarasenko, E. L. Ivchenko, D. Weiss, J. Eroms, S. D. Ganichev

Abstract: We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We dem… ▽ More We report on the observation of photon helicity driven currents in graphene. The directed net electric current is generated in single layer graphene by circularly polarized terahertz laser radiation at normal as well as at oblique incidence and changes its sign upon reversing the radiation helicity. The phenomenological and microscopic theories of the observed photocurrents are developed. We demonstrate that under oblique incidence the current is caused by the circular photon drag effect in the interior of graphene sheet. By contrast, the effect at normal incidence stems from the sample edges, which reduce the symmetry and result in an asymmetric scattering of carriers driven by the radiation field. Besides a photon helicity dependent current we also observe photocurrents in response to linearly polarized radiation. The microscopic mechanisms governing this effect are discussed. △ Less

Submitted 4 February, 2010; originally announced February 2010.

Comments: 13 pages, 7 figures

Weak Localization and Transport Gap in Graphene Antidot Lattices

Authors: J. Eroms, D. Weiss

Abstract: We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a hig… ▽ More We fabricated and measured antidot lattices in single layer graphene with lattice periods down to 90 nm. In large-period lattices, a well-defined quantum Hall effect is observed. Going to smaller antidot spacings the quantum Hall effect gradually disappears, following a geometric size effect. Lattices with narrow constrictions between the antidots behave as networks of nanoribbons, showing a high-resistance state and a transport gap of a few mV around the Dirac point. We observe pronounced weak localization in the magnetoresistance, indicating strong intervalley scattering at the antidot edges. The area of phase-coherent paths is bounded by the unit cell size at low temperatures, so each unit cell of the lattice acts as a ballistic cavity. △ Less

Submitted 16 September, 2009; v1 submitted 7 January, 2009; originally announced January 2009.

Comments: some revisions, to appear in New Journal of Physics, Special Issue Graphene

Journal ref: New J. Phys. 11 (2009) 095021

Quantum transport in ferromagnetic Permalloy nanostructures

Authors: D. Neumaier, A. Vogl, J. Eroms, D. Weiss

Abstract: We studied phase coherent phenomena in mesoscopic Permalloy samples by exploring low temperature transport. Both, differential conductance as a function of bias voltage and magnetoconductance of individual wires display conductance fluctuations. Analysis of these fluctuations yields a phase coherence length of $\sim250$ nm at 25 mK as well as a $1/\sqrt{T}$ temperature dependence. To suppress co… ▽ More We studied phase coherent phenomena in mesoscopic Permalloy samples by exploring low temperature transport. Both, differential conductance as a function of bias voltage and magnetoconductance of individual wires display conductance fluctuations. Analysis of these fluctuations yields a phase coherence length of $\sim250$ nm at 25 mK as well as a $1/\sqrt{T}$ temperature dependence. To suppress conductance fluctuations by ensemble averaging we investigated low temperature transport in wire arrays and extended Permalloy films. In these samples we have measured conductance corrections which stem from electron-electron interaction (EEI) but attempts to detect signatures of weak localization were without success. △ Less

Submitted 1 September, 2008; originally announced September 2008.

Morphology and flexibility of graphene and few-layer graphene on various substrates

Authors: U. Stöberl, U. Wurstbauer, W. Wegscheider, D. Weiss, J. Eroms

Abstract: We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and c… ▽ More We report on detailed microscopy studies of graphene and few-layer-graphene produced by mechanical exfoliation on various semi-conducting substrates. We demonstrate the possibility to prepare and analyze graphene on (001)-GaAs, manganese p-doped (001)-GaAs and InGaAs substrates. The morphology of graphene on these substrates was investigated by scanning electron and atomic force microscopy and compared to layers on silicon oxide. It was found that graphene sheets strongly follow the texture of the sustaining substrates independent on do**, polarity or roughness. Furthermore resist residues exist on top of graphene after a lithographic step. The obtained results provide the opportunity to research the graphene-substrate interactions. △ Less

Submitted 25 June, 2008; originally announced June 2008.

Low-frequency Noise in Josephson Junctions for Superconducting Qubits

Authors: J. Eroms, L. C. van Schaarenburg, E. F. C. Driessen, J. H. Plantenberg, K. Huizinga, R. N. Schouten, A. H. Verbruggen, C. J. P. M. Harmans, J. E. Mooij

Abstract: We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The spectral density decreases linearly with temperature between 150 K and 1 K and saturates below 0.8 K. At 4.2 K, the spectral density is about two orders of mag… ▽ More We have studied low-frequency resistance fluctuations in shadow-evaporated Al/AlOx/Al tunnel junctions. Between 300 K and 5 K the spectral density follows a 1/f-law. Below 5 K, individual defects distort the 1/f-shape of the spectrum. The spectral density decreases linearly with temperature between 150 K and 1 K and saturates below 0.8 K. At 4.2 K, the spectral density is about two orders of magnitude lower than expected from a recent survey [D. J. Van Harlingen et al., Phys. Rev. B 70, 064510 (2004)]. Due to the saturation below 0.8 K the estimated qubit dephasing times at 100 mK are only about two times longer than calculated by Van Harlingen et al. △ Less

Submitted 3 October, 2006; v1 submitted 12 April, 2006; originally announced April 2006.

Comments: Journal ref added, minor changes to match published version

Journal ref: Appl. Phys. Lett. 89, 122516 (2006)

Andreev reflection at high magnetic fields: Evidence for electron and hole transport in edge states

Authors: J. Eroms, D. Weiss, J. De Boeck, G. Borghs, U. Zülicke

Abstract: We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we f… ▽ More We have studied magnetotransport in arrays of niobium filled grooves in an InAs/AlGaSb heterostructure. The critical field of up to 2.6 T permits to enter the quantum Hall regime. In the superconducting state, we observe strong magnetoresistance oscillations, whose amplitude exceeds the Shubnikov-de Haas oscillations by a factor of about two, when normalized to the background. Additionally, we find that above a geometry-dependent magnetic field value the sample in the superconducting state has a higher longitudinal resistance than in the normal state. Both observations can be explained with edge channels populated with electrons and Andreev reflected holes. △ Less

Submitted 20 July, 2005; v1 submitted 14 April, 2004; originally announced April 2004.

Comments: accepted for Phys Rev Lett, some changes to text

Journal ref: Phys. Rev. Lett. 95, 107001 (2005)

Experimental Separation of Rashba and Dresselhaus Spin-Splittings in Semiconductor Quantum Wells

Authors: S. D. Ganichev, V. V. Bel'kov, L. E. Golub, E. L. Ivchenko, Petra Schneider, S. Giglberger, J. Eroms, J. DeBoeck, G. Borghs, W. Wegscheider, D. Weiss, W. Prettl

Abstract: The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a Q… ▽ More The relative strengths of Rashba and Dresselhaus terms describing the spin-orbit coupling in semiconductor quantum well (QW) structures are extracted from photocurrent measurements on n-type InAs QWs containing a two-dimensional electron gas (2DEG). This novel technique makes use of the angular distribution of the spin-galvanic effect at certain directions of spin orientation in the plane of a QW. The ratio of the relevant Rashba and Dresselhaus coefficients can be deduced directly from experiment and does not relay on theoretically obtained quantities. Thus our experiments open a new way to determine the different contributions to spin-orbit coupling. △ Less

Submitted 20 June, 2003; originally announced June 2003.

Commensurability effects in Andreev antidot billiards

Authors: J. Eroms, M. Tolkiehn, D. Weiss, U. Rössler, J. De Boeck, G. Borghs

Abstract: An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering t… ▽ More An Andreev billiard was realized in an array of niobium filled antidots in a high-mobility InAs/AlGaSb heterostructure. Below the critical temperature T_C of the Nb dots we observe a strong reduction of the resistance around B=0 and a suppression of the commensurability peaks, which are usually found in antidot lattices. Both effects can be explained in a classical Kubo approach by considering the trajectories of charge carriers in the semiconductor, when Andreev reflection at the semiconductor-superconductor interface is included. For perfect Andreev reflection, we expect a complete suppression of the commensurability features, even though motion at finite B is chaotic. △ Less

Submitted 9 July, 2001; originally announced July 2001.

Comments: 4 pages, 4 figures

Journal ref: Europhys. Letters 58, 569 (2002)

Skip** orbits and enhanced resistivity in large-diameter InAs/GaSb antidot lattices

Authors: J. Eroms, M. Zitzlsperger, D. Weiss, J. H. Smet, C. Albrecht, R. Fleischmann, M. Behet, J. De Boeck, G. Borghs

Abstract: We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo form… ▽ More We investigated the magnetotransport properties of high-mobility InAs/GaSb antidot lattices. In addition to the usual commensurability features at low magnetic field we found a broad maximum of classical origin around 2.5 T. The latter can be ascribed to a class of rosetta type orbits encircling a single antidot. This is shown by both a simple transport calculation based on a classical Kubo formula and an analysis of the Poincare surface of section at different magnetic field values. At low temperatures we observe weak 1/B-periodic oscillations superimposed on the classical maximum. △ Less

Submitted 27 July, 1998; originally announced July 1998.

Comments: 4 pages, 4 Postscript figures, REVTeX, submitted to Phys Rev B