Showing 1–50 of 136 results for author: Eriksson, M

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling

Authors: Benjamin Harpt, J. Corrigan, Nathan Holman, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, Rusko Ruskov, Charles Tahan, William D. Oliver, R. McDermott, Mark Friesen, M. A. Eriksson

Abstract: We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. △ Less

Submitted 11 July, 2024; originally announced July 2024.

Comments: Main text and Supplementary Information; 11 pages, 7 figures

Entanglement of photonic modes from a continuously driven two-level system

Authors: Jiaying Yang, Ingrid Strandberg, Alejandro Vivas-Viana, Akshay Gaikwad, Claudia Castillo-Moreno, Anton Frisk Kockum, Muhammad Asad Ullah, Carlos Sanchez Munoz, Axel Martin Eriksson, Simone Gasparinetti

Abstract: The ability to generate entangled states of light is a key primitive for quantum communication and distributed quantum computation. Continuously driven sources, including those based on spontaneous parametric downconversion, are usually probabilistic, whereas deterministic sources require accurate timing of the control fields. Here, we experimentally generate entangled photonic modes by continuous… ▽ More The ability to generate entangled states of light is a key primitive for quantum communication and distributed quantum computation. Continuously driven sources, including those based on spontaneous parametric downconversion, are usually probabilistic, whereas deterministic sources require accurate timing of the control fields. Here, we experimentally generate entangled photonic modes by continuously exciting a quantum emitter, a superconducting qubit, with a coherent drive, taking advantage of mode matching in the time and frequency domain. Using joint quantum state tomography and logarithmic negativity, we show that entanglement is generated between modes extracted from the two sidebands of the resonance fluorescence spectrum. Because the entangled photonic modes are perfectly orthogonal, they can be transferred into distinct quantum memories. Our approach can be utilized to distribute entanglement at a high rate in various physical platforms, with applications in waveguide quantum electrodynamics, distributed quantum computing, and quantum networks. △ Less

Submitted 10 July, 2024; originally announced July 2024.

Soft contributions to the thermal Higgs width across an electroweak phase transition

Authors: M. Eriksson, M. Laine

Abstract: We estimate the equilibration rate of a nearly homogeneous Higgs field, displaced from its ground state during the onset of an electroweak phase transition. The computation is carried out with Hard Thermal Loop resummed perturbation theory, and a significant part of the result originates from Bose-enhanced $t$-channel $2\leftrightarrow 2$ scatterings. The expression is shown to be IR finite and ga… ▽ More We estimate the equilibration rate of a nearly homogeneous Higgs field, displaced from its ground state during the onset of an electroweak phase transition. The computation is carried out with Hard Thermal Loop resummed perturbation theory, and a significant part of the result originates from Bose-enhanced $t$-channel $2\leftrightarrow 2$ scatterings. The expression is shown to be IR finite and gauge independent. Possible applications to Langevin simulations of bubble nucleation are mentioned, and we also contrast with the friction affecting bubble growth. △ Less

Submitted 14 June, 2024; v1 submitted 9 April, 2024; originally announced April 2024.

Comments: 30 pages. v2: clarifications added

Journal ref: JCAP 06 (2024) 016

Direct detection of quasiparticle tunneling with a charge-sensitive superconducting sensor coupled to a waveguide

Authors: Kazi Rafsanjani Amin, Axel M. Eriksson, Mikael Kervinen, Linus Andersson, Robert Rehammar, Simone Gasparinetti

Abstract: Detecting quasiparticle tunneling events in superconducting circuits provides information about the population and dynamics of non-equilibrium quasiparticles. Such events can be detected by monitoring changes in the frequency of an offset-charge-sensitive superconducting qubit. This monitoring has so far been performed by Ramsey interferometry assisted by a readout resonator. Here, we demonstrate… ▽ More Detecting quasiparticle tunneling events in superconducting circuits provides information about the population and dynamics of non-equilibrium quasiparticles. Such events can be detected by monitoring changes in the frequency of an offset-charge-sensitive superconducting qubit. This monitoring has so far been performed by Ramsey interferometry assisted by a readout resonator. Here, we demonstrate a quasiparticle detector based on a superconducting qubit directly coupled to a waveguide. We directly measure quasiparticle number parity on the qubit island by probing the coherent scattering of a microwave tone, offering simplicity of operation, fast detection speed, and a large signal-to-noise ratio. We observe tunneling rates between 0.8 and $7~\rm{s}^{-1}$, depending on the average occupation of the detector qubit, and achieve a temporal resolution below $10~μ\rm{s}$ without a quantum-limited amplifier. Our simple and efficient detector lowers the barrier to perform studies of quasiparticle population and dynamics, facilitating progress in fundamental science, quantum information processing, and sensing. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Generalized angle-orbital-angular-momentum Talbot effect and modulo mode sorting

Authors: Jianqi Hu, Matias Eriksson, Sylvain Gigan, Robert Fickler

Abstract: The Talbot effect describes periodic revivals of field patterns and is ubiquitous across wave systems. In optics, it is mostly known for its manifestations in space and time, but is also observed in the wavevector and frequency spectra owing to the Fourier duality. Recently, the Talbot self-imaging has been shown separately in the azimuthal angle and orbital angular momentum (OAM) domains. Here, w… ▽ More The Talbot effect describes periodic revivals of field patterns and is ubiquitous across wave systems. In optics, it is mostly known for its manifestations in space and time, but is also observed in the wavevector and frequency spectra owing to the Fourier duality. Recently, the Talbot self-imaging has been shown separately in the azimuthal angle and orbital angular momentum (OAM) domains. Here, we unveil the missing link between them and demonstrate the generalized angle-OAM Talbot effect. Versatile transformations of petal fields and OAM spectra are experimentally showcased, based on the synergy of angular Talbot phase modulation and light propagation in a ring-core fiber. Moreover, the generalized self-imaging concept leads to new realizations in mode sorting, which separate OAM modes in a modulo manner, theoretically free from any crosstalk within the congruence classes of OAM modes. We design and experimentally construct various mode sorters with excellent performance, and show the unconventional behavior of Talbot-based sorters where neighboring OAM modes can be mapped to positions far apart. Besides its fundamental interest, our work finds applications in OAM-based information processing, and implies that the physical phenomena in time-frequency and angle-OAM domains are broadly connected as well as their processing techniques may be borrowed interchangeably. △ Less

Submitted 22 February, 2024; originally announced February 2024.

Explainable Classification Techniques for Quantum Dot Device Measurements

Authors: Daniel Schug, Tyler J. Kovach, M. A. Wolfe, Jared Benson, Sanghyeok Park, J. P. Dodson, J. Corrigan, M. A. Eriksson, Justyna P. Zwolak

Abstract: In the physical sciences, there is an increased need for robust feature representations of image data: image acquisition, in the generalized sense of two-dimensional data, is now widespread across a large number of fields, including quantum information science, which we consider here. While traditional image features are widely utilized in such cases, their use is rapidly being supplanted by Neura… ▽ More In the physical sciences, there is an increased need for robust feature representations of image data: image acquisition, in the generalized sense of two-dimensional data, is now widespread across a large number of fields, including quantum information science, which we consider here. While traditional image features are widely utilized in such cases, their use is rapidly being supplanted by Neural Network-based techniques that often sacrifice explainability in exchange for high accuracy. To ameliorate this trade-off, we propose a synthetic data-based technique that results in explainable features. We show, using Explainable Boosting Machines (EBMs), that this method offers superior explainability without sacrificing accuracy. Specifically, we show that there is a meaningful benefit to this technique in the context of quantum dot tuning, where human intervention is necessary at the current stage of development. △ Less

Submitted 7 May, 2024; v1 submitted 21 February, 2024; originally announced February 2024.

Comments: 5 pages, 3 figures

Journal ref: Proceedings of the XAI4Sci: Explainable machine learning for sciences workshop at AAAI 2024, Vancouver, Canada

Data Needs and Challenges of Quantum Dot Devices Automation: Workshop Report

Authors: Justyna P. Zwolak, Jacob M. Taylor, Reed Andrews, Jared Benson, Garnett Bryant, Donovan Buterakos, Anasua Chatterjee, Sankar Das Sarma, Mark A. Eriksson, Eliška Greplová, Michael J. Gullans, Fabian Hader, Tyler J. Kovach, Pranav S. Mundada, Mick Ramsey, Torbjoern Rasmussen, Brandon Severin, Anthony Sigillito, Brennan Undseth, Brian Weber

Abstract: Gate-defined quantum dots are a promising candidate system to realize scalable, coupled qubit systems and serve as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections that must be accounted for, which hinders the characterization, tuning, and operation process. Moreover, with an increasing number of quantum dot qubits, the relevant… ▽ More Gate-defined quantum dots are a promising candidate system to realize scalable, coupled qubit systems and serve as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections that must be accounted for, which hinders the characterization, tuning, and operation process. Moreover, with an increasing number of quantum dot qubits, the relevant parameter space grows sufficiently to make heuristic control infeasible. Thus, it is imperative that reliable and scalable autonomous tuning approaches are developed. In this report, we outline current challenges in automating quantum dot device tuning and operation with a particular focus on datasets, benchmarking, and standardization. We also present ideas put forward by the quantum dot community on how to overcome them. △ Less

Submitted 12 May, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: White paper/overview based on a workshop held at the National Institute of Standards and Technology, Gaithersburg, MD. 13 pages

Control of threshold voltages in Si/SiGe quantum devices via optical illumination

Authors: M. A. Wolfe, Brighton X. Coe, Justin S. Edwards, Tyler J. Kovach, Thomas McJunkin, Benjamin Harpt, D. E. Savage, M. G. Lagally, R. McDermott, Mark Friesen, Shimon Kolkowitz, M. A. Eriksson

Abstract: Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate v… ▽ More Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events. △ Less

Submitted 20 June, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: 8 pages, 6 figures

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Authors: Collin C. D. Frink, Benjamin D. Woods, Merritt P. Losert, E. R. MacQuarrie, M. A. Eriksson, Mark Friesen

Abstract: Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattic… ▽ More Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) deposition stress in the metal gates. By simulating different gate geometries, ranging from simple to realistically complicated, and including features like overlap** metal and oxide layers, we can explain most observed strain features. In particular, we show that strain-induced potential fluctuations can be suppressed by employing overlap** gates that cover the whole active region, when the oxide layers are thin. These results suggest that strain effects should not present a serious challenge to qubit uniformity when following simple design rules. △ Less

Submitted 6 January, 2024; v1 submitted 14 December, 2023; originally announced December 2023.

Comments: 13 pages, 9 figures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Authors: Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt, M. A. Eriksson, Mark Friesen

Abstract: Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main ben… ▽ More Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing. △ Less

Submitted 31 May, 2024; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 13 pages (5 main text), 5 figures. Published version

Journal ref: npj Quantum Inf 10, 54 (2024)

Universal control of a bosonic mode via drive-activated native cubic interactions

Authors: Axel M. Eriksson, Théo Sépulcre, Mikael Kervinen, Timo Hillmann, Marina Kudra, Simon Dupouy, Yong Lu, Maryam Khanahmadi, Jiaying Yang, Claudia Castillo Moreno, Per Delsing, Simone Gasparinetti

Abstract: Linear bosonic modes offer a hardware-efficient alternative for quantum information processing but require access to some nonlinearity for universal control. The lack of nonlinearity in photonics has led to encoded measurement-based quantum computing, which rely on linear operations but requires access to resourceful ('nonlinear') quantum states, such as cubic phase states. In contrast, supercondu… ▽ More Linear bosonic modes offer a hardware-efficient alternative for quantum information processing but require access to some nonlinearity for universal control. The lack of nonlinearity in photonics has led to encoded measurement-based quantum computing, which rely on linear operations but requires access to resourceful ('nonlinear') quantum states, such as cubic phase states. In contrast, superconducting microwave circuits offer engineerable nonlinearities but suffer from static Kerr nonlinearity. Here, we demonstrate universal control of a bosonic mode composed of a superconducting nonlinear asymmetric inductive element (SNAIL) resonator, enabled by native nonlinearities in the SNAIL element. We suppress static nonlinearities by operating the SNAIL in the vicinity of its Kerr-free point and dynamically activate nonlinearities up to third order by fast flux pulses. We experimentally realize a universal set of generalized squeezing operations, as well as the cubic phase gate, and exploit them to deterministically prepare a cubic phase state in 60 ns. Our results initiate the experimental field of universal continuous-variables quantum computing. △ Less

Submitted 22 September, 2023; v1 submitted 29 August, 2023; originally announced August 2023.

Comments: 11 pages, 6 figures and supplementary materials

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

Sensing rotations with multiplane light conversion

Authors: M. Eriksson, A. Z. Goldberg, M. Hiekkamäki, F. Bouchard, G. Leuchs, R. Fickler, L. L. Sanchez-Soto

Abstract: We report an experiment estimating the three parameters of a general rotation. The scheme uses quantum states attaining the ultimate precision dictated by the quantum Cramér-Rao bound. We realize the states experimentally using the orbital angular momentum of light and implement the rotations with a multiplane light conversion setup, which allows one to perform arbitrary unitary transformations on… ▽ More We report an experiment estimating the three parameters of a general rotation. The scheme uses quantum states attaining the ultimate precision dictated by the quantum Cramér-Rao bound. We realize the states experimentally using the orbital angular momentum of light and implement the rotations with a multiplane light conversion setup, which allows one to perform arbitrary unitary transformations on a finite set of spatial modes. The observed performance suggests a range of potential applications in the next generation of rotation sensors. △ Less

Submitted 24 January, 2023; originally announced January 2023.

Comments: 8 pages, 4 figures. Comments welcome! arXiv admin note: text overlap with arXiv:2012.00590

Journal ref: Phys. Rev. Applied 20, 024052 (2023)

Experimental realization of deterministic and selective photon addition in a bosonic mode assisted by an ancillary qubit

Authors: Marina Kudra, Tahereh Abad, Mikael Kervinen, Axel M. Eriksson, Fernando Quijandría, Per Delsing, Simone Gasparinetti

Abstract: Bosonic quantum error correcting codes are primarily designed to protect against single-photon loss. To correct for this type of error, one can encode the logical qubit in code spaces with a definite photon parity, such as cat codes or binomial codes. Error correction requires a recovery operation that maps the error states -- which have opposite parity -- back onto the code states. Here, we reali… ▽ More Bosonic quantum error correcting codes are primarily designed to protect against single-photon loss. To correct for this type of error, one can encode the logical qubit in code spaces with a definite photon parity, such as cat codes or binomial codes. Error correction requires a recovery operation that maps the error states -- which have opposite parity -- back onto the code states. Here, we realize a collection of photon-number-selective, simultaneous photon addition operations on a bosonic mode, a microwave cavity, assisted by a superconducting qubit. These operations are implemented as two-photon transitions that excite the cavity and the qubit at the same time. The additional degree of freedom of the qubit makes it possible to implement a coherent, unidirectional map** between spaces of opposite photon parity. We present the successful experimental implementation of the drives and the phase control they enable on superpositions of Fock states. The presented technique, when supplemented with qubit reset, is suitable for autonomous quantum error correction in bosonic systems, and, more generally, opens the possibility to realize a range of non-unitary transformations on a bosonic mode. △ Less

Submitted 22 December, 2022; originally announced December 2022.

Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator

Authors: J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, William D. Oliver, R. McDermott, Charles Tahan, Mark Friesen, M. A. Eriksson

Abstract: Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled… ▽ More Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled to a high-impedance resonator via a "flip-chip" design geometry. By applying an adiabatic ac drive to the qubit through two different channels, and studying the effects of qubit energy detuning, interdot tunneling, and driving strength, we are able to unequivocally confirm the presence of a longitudinal coupling between the qubit and cavity, while the qubit remains in its ground state. Since this coupling is proportional to the driving amplitude, and is therefore switchable, it has the potential to become a powerful new tool in qubit experiments. △ Less

Submitted 14 September, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: Main text and Supplementary Materials, 16 pages, 10 figures

Journal ref: Physical Review Applied 20, 064005 (2023)

Latched readout for the quantum dot hybrid qubit

Authors: J. Corrigan, J. P. Dodson, Brandur Thorgrimsson, Samuel F. Neyens, T. J. Knapp, Thomas McJunkin, S. N. Coppersmith, M. A. Eriksson

Abstract: A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a m… ▽ More A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting. △ Less

Submitted 15 October, 2022; originally announced October 2022.

Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration

Authors: Benjamin D. Woods, M. A. Eriksson, Robert Joynt, Mark Friesen

Abstract: We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coup… ▽ More We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coupling is induced, at all physically relevant electric field strengths, which is over an order of magnitude larger than what is found in conventional Si/SiGe heterostructures without Ge concentration oscillations. This enhancement is caused by the Ge concentration oscillations producing wave-function satellite peaks a distance $2 π/λ$ away in momentum space from each valley, which then couple to the opposite valley through Dresselhaus spin-orbit coupling. Our results indicate that the enhanced spin-orbit coupling can enable fast spin manipulation within Si quantum dots using electric dipole spin resonance in the absence of micromagnets. Indeed, our calculations yield a Rabi frequency $Ω_{\text{Rabi}}/B > 500~\text{MHz/T}$ near the optimal Ge oscillation wavelength $λ= 1.57~\text{nm}$. △ Less

Submitted 16 January, 2023; v1 submitted 4 October, 2022; originally announced October 2022.

Comments: 19 pages, 11 figures

Journal ref: Phys. Rev. B 107, 035418 (2023)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

Stochastic inflation from quantum field theory and the parametric dependence of the effective noise amplitude

Authors: Jens O. Andersen, Magdalena Eriksson, Anders Tranberg

Abstract: The non-linear dynamics of long-wavelength cosmological fluctuations may be phrased in terms of an effective classical, but stochastic evolution equation. The stochastic noise represents short-wavelength modes that continually redshift into the long-wavelength domain. The effective evolution may be derived from first principles quantum field theory in an expanding background, through a sequence of… ▽ More The non-linear dynamics of long-wavelength cosmological fluctuations may be phrased in terms of an effective classical, but stochastic evolution equation. The stochastic noise represents short-wavelength modes that continually redshift into the long-wavelength domain. The effective evolution may be derived from first principles quantum field theory in an expanding background, through a sequence of approximations calling for additional scrutiny. We perform such an analysis, putting particular emphasis on the amplitude of the stochastic noise, which ultimately determines the cosmological correlations and provides a non-perturbative IR regulator to the dynamics. △ Less

Submitted 22 February, 2022; v1 submitted 29 November, 2021; originally announced November 2021.

Comments: 35 pages, 13 figures, references added, typos corrected, matches published version

Journal ref: JHEP 02 (2022) 121

A Simple Numerical Method for Evaluating Heat Dissipation from Curved Wires with Periodic Applied Heating

Authors: Gabriel R. Jaffe, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent expe… ▽ More In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent experimental work has demonstrated that in some cases curved-wire geometries can be used without introducing detectable systematic error. We describe a general numerical method that can be used to calculate the temperature of three-omega heating wires with arbitrary wire geometries. This method provides experimentalists with a simple quantitative procedure for calculating how large the systematic error caused by a particular wire asymmetry will be. We show calculations of two useful cases: a straight wire with a single bend of arbitrary angle and a wire that forms a circle. We find that the amplitude of the in-phase temperature oscillations near a wire that forms a circle differs from the prediction using the analytic straight-line source solution by $<$12%, provided that the thermal penetration depth is less than ten times the radius of curvature of the wire path. The in-phase temperature amplitude 1.5 wire widths away from a 90$^{\circ}$ bend in a wire is within 11% of the straight-line source prediction for all penetration depths greater than the wire width. Our calculations indicate that the straight-line source solution breaks down significantly when the wire bend angle is less than 45$^{\circ}$. △ Less

Submitted 8 October, 2021; originally announced October 2021.

Comments: 4 pages, 4 figures

Talbot self-imaging and two-photon interference in ring-core fibers

Authors: Matias Eriksson, Benjamin A. Stickler, Lea Kopf, Markus Hiekkamäki, Regina Gumenyuk, Yuri Chamorovskiy, Sven Ramelow, Robert Fickler

Abstract: Wave propagation on the surface of cylinders exhibits interferometric self imaging, much like the Talbot effect in the near-field diffraction at periodic gratings. We report the experimental observation of the cylindrical Talbot carpet in weakly-guiding ring-core fibers for classical light fields. We further show that the ring-core fiber acts as a high-order optical beamsplitter for single photons… ▽ More Wave propagation on the surface of cylinders exhibits interferometric self imaging, much like the Talbot effect in the near-field diffraction at periodic gratings. We report the experimental observation of the cylindrical Talbot carpet in weakly-guiding ring-core fibers for classical light fields. We further show that the ring-core fiber acts as a high-order optical beamsplitter for single photons, whose output can be controlled by the relative phase between the input light fields. By also demonstrating high-quality two-photon interference between indistinguishable photons sent into the ring-core fiber, our findings open the door to applications in optical telecommunications as a compact beam multiplexer as well as in quantum information processing tasks as a scalable realization of a linear optical network. △ Less

Submitted 16 September, 2021; originally announced September 2021.

Comments: 9 pages, 8 figures

Toward Robust Autotuning of Noisy Quantum Dot Devices

Authors: Joshua Ziegler, Thomas McJunkin, E. S. Joseph, Sandesh S. Kalantre, Benjamin Harpt, D. E. Savage, M. G. Lagally, M. A. Eriksson, Jacob M. Taylor, Justyna P. Zwolak

Abstract: The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control… ▽ More The current autotuning approaches for quantum dot (QD) devices, while showing some success, lack an assessment of data reliability. This leads to unexpected failures when noisy or otherwise low-quality data is processed by an autonomous system. In this work, we propose a framework for robust autotuning of QD devices that combines a machine learning (ML) state classifier with a data quality control module. The data quality control module acts as a "gatekeeper" system, ensuring that only reliable data are processed by the state classifier. Lower data quality results in either device recalibration or termination. To train both ML systems, we enhance the QD simulation by incorporating synthetic noise typical of QD experiments. We confirm that the inclusion of synthetic noise in the training of the state classifier significantly improves the performance, resulting in an accuracy of 95.0(9) % when tested on experimental data. We then validate the functionality of the data quality control module by showing that the state classifier performance deteriorates with decreasing data quality, as expected. Our results establish a robust and flexible ML framework for autonomous tuning of noisy QD devices. △ Less

Submitted 8 September, 2022; v1 submitted 30 July, 2021; originally announced August 2021.

Comments: 12 pages, 6 figures

Journal ref: Phys. Rev. Applied 17, 024069 (2022)

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Authors: Thomas McJunkin, E. R. MacQuarrie, Leah Tom, S. F. Neyens, J. P. Dodson, Brandur Thorgrimsson, J. Corrigan, H. Ekmel Ercan, D. E. Savage, M. G. Lagally, Robert Joynt, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i… ▽ More Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 104, 085406 (2021)

How valley-orbit states in silicon quantum dots probe quantum well interfaces

Authors: J. P. Dodson, H. Ekmel Ercan, J. Corrigan, Merritt Losert, Nathan Holman, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration int… ▽ More The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface. △ Less

Submitted 6 April, 2022; v1 submitted 26 March, 2021; originally announced March 2021.

Comments: 9 pages, 5 figures

Journal ref: Physical Review Letters (Vol. 128, Issue 14), (2022)

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Authors: Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, Max G. Lagally, Mark A. Eriksson, Victor W. Brar

Abstract: Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon… ▽ More Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths in hBN have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that the thermal conductivity is extremely sensitive to film thickness. We measure a forty-fold increase in the cross-plane thermal conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large increase in thermal conductivity with increasing thickness to contributions from phonons with long mean free paths (MFPs), spanning many hundreds of nanometers in the thickest flakes. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of seven below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials. △ Less

Submitted 8 October, 2021; v1 submitted 12 March, 2021; originally announced March 2021.

Comments: 4 pages, 3 figures

Journal ref: ACS Appl. Mater. Interfaces 2023, 15, 9, 12545-12550

Ray-based framework for state identification in quantum dot devices

Authors: Justyna P. Zwolak, Thomas McJunkin, Sandesh S. Kalantre, Samuel F. Neyens, E. R. MacQuarrie, Mark A. Eriksson, Jacob M. Taylor

Abstract: Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement techniques, relying on complete or near-complete exploration via two-parameter scans (images) of the device response, quickly become impractical with… ▽ More Quantum dots (QDs) defined with electrostatic gates are a leading platform for a scalable quantum computing implementation. However, with increasing numbers of qubits, the complexity of the control parameter space also grows. Traditional measurement techniques, relying on complete or near-complete exploration via two-parameter scans (images) of the device response, quickly become impractical with increasing numbers of gates. Here we propose to circumvent this challenge by introducing a measurement technique relying on one-dimensional projections of the device response in the multidimensional parameter space. Dubbed the ``ray-based classification (RBC) framework,'' we use this machine learning approach to implement a classifier for QD states, enabling automated recognition of qubit-relevant parameter regimes. We show that RBC surpasses the 82 % accuracy benchmark from the experimental implementation of image-based classification techniques from prior work while reducing the number of measurement points needed by up to 70 %. The reduction in measurement cost is a significant gain for time-intensive QD measurements and is a step forward toward the scalability of these devices. We also discuss how the RBC-based optimizer, which tunes the device to a multiqubit regime, performs when tuning in the two-dimensional and three-dimensional parameter spaces defined by plunger and barrier gates that control the QDs.This work provides experimental validation of both efficient state identification and optimization with machine learning techniques for non-traditional measurements in quantum systems with high-dimensional parameter spaces and time-intensive measurements. △ Less

Submitted 17 June, 2021; v1 submitted 23 February, 2021; originally announced February 2021.

Comments: 9 pages, 4 figures

Journal ref: PRX Quantum 2, 020335 (2021)

Magnetic gradient free two axis control of a valley spin qubit in SiGe

Authors: Y. -Y. Liu, L. A. Orona, Samuel F. Neyens, E. R. MacQuarrie, M. A. Eriksson, A. Yacoby

Abstract: Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that valley states can serve as an asset that enables two-axis control of a singlet-triplet qubit formed in a double quantum dot without the application of a magnetic fie… ▽ More Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that valley states can serve as an asset that enables two-axis control of a singlet-triplet qubit formed in a double quantum dot without the application of a magnetic field gradient. We measure the valley spectrum in each dot using magnetic field spectroscopy of Zeeman split triplet states. The interdot transition between ground states requires an electron to flip between valleys, which in turn provides a g-factor difference $Δg$ between two dots. This $Δg$ serves as an effective magnetic field gradient and allows for qubit rotations with a rate that increases linearly with an external magnetic field. We measured several interdot transitions and found that this valley introduced $Δg$ is universal and electrically tunable. This could potentially simplify scaling up quantum information processing in the SiGe platform by removing the requirement for magnetic field gradients which are difficult to engineer. △ Less

Submitted 24 January, 2021; originally announced January 2021.

Comments: 4 figures

Journal ref: Phys. Rev. Applied 16, 024029 (2021)

Radio frequency reflectometry in silicon-based quantum dots

Authors: Y. -Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby

Abstract: RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a se… ▽ More RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s. △ Less

Submitted 6 January, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 16, 014057 (2021)

Quantum corrections to slow-roll inflation: scalar and tensor modes

Authors: Jens O. Andersen, Magdalena Eriksson, Anders Tranberg

Abstract: Inflation is often described through the dynamics of a scalar field, slow-rolling in a suitable potential. Ultimately, this inflaton must be identified as the expectation value of a quantum field, evolving in a quantum effective potential. The shape of this potential is determined by the underlying tree-level potential, dressed by quantum corrections from the scalar field itself and the metric per… ▽ More Inflation is often described through the dynamics of a scalar field, slow-rolling in a suitable potential. Ultimately, this inflaton must be identified as the expectation value of a quantum field, evolving in a quantum effective potential. The shape of this potential is determined by the underlying tree-level potential, dressed by quantum corrections from the scalar field itself and the metric perturbations. Following [1], we compute the effective scalar field equations and the corrected Friedmann equations to quadratic order in both scalar field, scalar metric and tensor perturbations. We identify the quantum corrections from different sources at leading order in slow-roll, and estimate their magnitude in benchmark models of inflation. We comment on the implications of non-minimal coupling to gravity in this context. △ Less

Submitted 10 May, 2021; v1 submitted 24 November, 2020; originally announced November 2020.

Comments: 26 pages, no figures. v2: Version matches published paper

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator

Authors: Nathan Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, William D. Oliver, R. McDermott, M. A. Eriksson

Abstract: Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing… ▽ More Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3D integration. To prove the viability of this approach, we demonstrate 3D integration of a high-impedance TiN resonator coupled to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36 limited by the resonator-dot capacitance. Characterization of the dot and resonator systems shows such integration can be done while maintaining low charge noise metrics for the quantum dots and with improved loaded quality factors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowing for high-sensitivity charge detection and the potential for high fidelity 2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 12 pages, 7 figures

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

Authors: J. Corrigan, J. P. Dodson, H. Ekmel Ercan, J. C. Abadillo-Uriel, Brandur Thorgrimsson, T. J. Knapp, Nathan Holman, Thomas McJunkin, Samuel F. Neyens, E. R. MacQuarrie, Ryan H. Foote, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do… ▽ More Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Lett. 127, 127701 (2021)

Adjoint-optimized nanoscale light extractor for nitrogen-vacancy centers in diamond

Authors: Raymond A. Wambold, Zhaoning Yu, Yuzhe Xiao, Benjamin Bachman, Gabriel Jaffe, Shimon Kolkowitz, Jennifer T. Choy, Mark A. Eriksson, Robert J. Hamers, Mikhail A. Kats

Abstract: We designed a nanoscale light extractor (NLE) for efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields str… ▽ More We designed a nanoscale light extractor (NLE) for efficient outcoupling and beaming of broadband light emitted by shallow, negatively charged nitrogen-vacancy (NV) centers in bulk diamond. The NLE consists of a patterned silicon layer on diamond and requires no etching of the diamond surface. Our design process is based on adjoint optimization using broadband time-domain simulations and yields structures that are inherently robust to positioning and fabrication errors. Our NLE functions like a transmission antenna for the NV center, enhancing the optical power extracted from an NV center positioned 10 nm below the diamond surface by a factor of more than 35, and beaming the light into a +/-30° cone in the far field. This approach to light extraction can be readily adapted to other solid-state color centers. △ Less

Submitted 7 October, 2020; v1 submitted 9 July, 2020; originally announced July 2020.

Comments: Main text + supplementary

Microwave Engineering for Semiconductor Quantum Dots in a cQED Architecture

Authors: Nathan Holman, J. P. Dodson, L. F. Edge, S. N. Coppersmith, M. Friesen, R. McDermott, M. A. Eriksson

Abstract: We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the chara… ▽ More We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Three-Omega Thermal-Conductivity Measurements with Curved Heater Geometries

Authors: Gabriel R. Jaffe, Keenan J. Smith, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the req… ▽ More The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the required millimeter-long straight wire on the sample surface. There are currently no available criteria for how diverting three-omega heater wires around obstacles affects the validity of the thermal measurement. In this Letter, we quantify the effect of wire curvature by performing three-omega experiments with a wide range of frequencies using both curved and straight heater geometries on SiO$_2$/Si samples. When the heating wire is curved, we find that the measured Si substrate thermal conductivity changes by only 0.2%. Similarly, we find that wire curvature has no significant effect on the determination of the thermal resistance of a $\sim$65 nm SiO$_2$ layer, even for the sharpest corners considered here, for which the largest measured ratio of the thermal penetration depth of the applied thermal wave to radius of curvature of the heating wire is 4.3. This result provides useful design criteria for three-omega experiments by setting a lower bound for the maximum ratio of thermal penetration depth to wire radius of curvature. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 073102 (2020)

Fabrication process and failure analysis for robust quantum dots in silicon

Authors: J. P. Dodson, Nathan Holman, Brandur Thorgrimsson, Samuel F. Neyens, E. R. MacQuarrie, Thomas McJunkin, Ryan H. Foote, L. F. Edge, S. N. Coppersmith, M. A. Eriksson

Abstract: We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetti… ▽ More We present an improved fabrication process for overlap** aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlap** aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure. △ Less

Submitted 15 September, 2020; v1 submitted 12 April, 2020; originally announced April 2020.

Comments: 5 figures, 9 pages

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Authors: E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson, J. Corrigan, Brandur Thorgrimsson, Nathan Holman, M. Palma, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously dr… ▽ More Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed. △ Less

Submitted 15 March, 2020; originally announced March 2020.

Comments: Main text plus supplemental information, 24 pages, 13 figures total)

Quantum Simulators: Architectures and Opportunities

Authors: Ehud Altman, Kenneth R. Brown, Giuseppe Carleo, Lincoln D. Carr, Eugene Demler, Cheng Chin, Brian DeMarco, Sophia E. Economou, Mark A. Eriksson, Kai-Mei C. Fu, Markus Greiner, Kaden R. A. Hazzard, Randall G. Hulet, Alicia J. Kollar, Benjamin L. Lev, Mikhail D. Lukin, Ruichao Ma, Xiao Mi, Shashank Misra, Christopher Monroe, Kater Murch, Zaira Nazario, Kang-Kuen Ni, Andrew C. Potter, Pedram Roushan , et al. (12 additional authors not shown)

Abstract: Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati… ▽ More Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education. △ Less

Submitted 20 December, 2019; v1 submitted 14 December, 2019; originally announced December 2019.

Comments: 41 pages -- references and acknowledgments added in v2

Journal ref: PRX Quantum 2, 017003 (2021)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

The effect of external electric fields on silicon with superconducting gallium nano-precipitates

Authors: Brandur Thorgrimsson, Thomas McJunkin, E. R. MacQuarrie, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding bot… ▽ More Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples), and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this materials system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential to the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here. △ Less

Submitted 12 June, 2020; v1 submitted 15 November, 2019; originally announced November 2019.

Comments: 22 pages, 6 figures

Journal ref: J. Appl. Phys. 127, 215102 (2020)

Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields

Authors: Viktoriia Kornich, Maxim G. Vavilov, Mark Friesen, M. A. Eriksson, S. N. Coppersmith

Abstract: We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In par… ▽ More We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In particular, if the amplitude of one component is tuned to the value determined by the superconducting order parameter in the wire, the MBS can exist even if the second component has a much smaller amplitude. We also explore the effect of the chemical potential on the phase diagram. Our analysis is both numerical and analytical, with good agreement between the two methods. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 125414 (2020)

Auto-tuning of double dot devices in situ with machine learning

Authors: Justyna P. Zwolak, Thomas McJunkin, Sandesh S. Kalantre, J. P. Dodson, E. R. MacQuarrie, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark A. Eriksson, Jacob M. Taylor

Abstract: The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular,… ▽ More The current practice of manually tuning quantum dots (QDs) for qubit operation is a relatively time-consuming procedure that is inherently impractical for scaling up and applications. In this work, we report on the {\it in situ} implementation of a recently proposed autotuning protocol that combines machine learning (ML) with an optimization routine to navigate the parameter space. In particular, we show that a ML algorithm trained using exclusively simulated data to quantitatively classify the state of a double-QD device can be used to replace human heuristics in the tuning of gate voltages in real devices. We demonstrate active feedback of a functional double-dot device operated at millikelvin temperatures and discuss success rates as a function of the initial conditions and the device performance. Modifications to the training network, fitness function, and optimizer are discussed as a path toward further improvement in the success rate when starting both near and far detuned from the target double-dot range. △ Less

Submitted 1 April, 2020; v1 submitted 17 September, 2019; originally announced September 2019.

Comments: 9 pages, 7 figures

Journal ref: Phys. Rev. Applied 13, 034075 (2020)

Measurements of capacitive coupling within a quadruple quantum dot array

Authors: Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson, J. Corrigan, Nathan Holman, Brandur Thorgrimsson, M. Palma, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract… ▽ More We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 6 pages + supplementary information, 4 figures

Journal ref: Phys. Rev. Applied 12, 064049 (2019)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot

Authors: J. C. Abadillo-Uriel, M. A. Eriksson, S. N. Coppersmith, M. Friesen

Abstract: A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where… ▽ More A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where dephasing is minimized. Here, we explore an important, new resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables (i) direct transitions between qubit states, (ii) a strong, charge-like qubit coupling, and (iii) leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines maximal tunability of the coupling strength with leading-order noise suppression. We perform simulations with $1/f$-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities $>99$\% under realistic conditions. These results greatly expand the toolbox for singlet-triplet qubits. △ Less

Submitted 16 May, 2019; v1 submitted 15 May, 2019; originally announced May 2019.

Comments: 9 pages + 4 pages of SI

Journal ref: Nature Communications 10, 5641 (2019)

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)

Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices

Authors: Adam Frees, John King Gamble, Daniel R. Ward, Robin Blume-Kohout, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device… ▽ More Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the Compressed Optimization of Device Architectures (CODA), in order to both efficiently identify sparse sets of voltage changes that control quantum systems, and to introduce a metric which can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes. △ Less

Submitted 13 January, 2019; v1 submitted 12 June, 2018; originally announced June 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Applied 11, 024063 (2019)

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

$J$-factors for self-interacting dark matter in 20 dwarf spheroidal galaxies

Authors: Sebastian Bergström, Riccardo Catena, Andrea Chiappo, Jan Conrad, Björn Eurenius, Magdalena Eriksson, Michael Högberg, Susanna Larsson, Emelie Olsson, Andreas Unger, Rikard Wadman

Abstract: Dwarf spheroidal galaxies are among the most promising targets for indirect dark matter (DM) searches in $γ$-rays. The $γ$-ray flux from DM annihilation in a dwarf spheroidal galaxy is proportional to the $J$-factor of the source. The $J$-factor of a dwarf spheroidal galaxy is the line-of-sight integral of the DM mass density squared times… ▽ More Dwarf spheroidal galaxies are among the most promising targets for indirect dark matter (DM) searches in $γ$-rays. The $γ$-ray flux from DM annihilation in a dwarf spheroidal galaxy is proportional to the $J$-factor of the source. The $J$-factor of a dwarf spheroidal galaxy is the line-of-sight integral of the DM mass density squared times $\langle σ_{\rm ann} v_{\rm rel} \rangle/(σ_{\rm ann} v_{\rm rel})_0$, where $σ_{\rm ann} v_{\rm rel}$ is the DM annihilation cross-section times relative velocity $v_{\rm rel}=|{\bf v}_{\rm rel}|$, angle brackets denote average over ${\bf v}_{\rm rel}$, and $(σ_{\rm ann} v_{\rm rel})_0$ is the $v_{\rm rel}$-independent part of $σ_{\rm ann} v_{\rm rel}$. If $σ_{\rm ann} v_{\rm rel}$ is constant in $v_{\rm rel}$, $J$-factors only depend on the DM space distribution in the source. However, if $σ_{\rm ann} v_{\rm rel}$ varies with $v_{\rm rel}$, as in the presence of DM self-interactions, $J$-factors also depend on the DM velocity distribution, and on the strength and range of the DM self-interaction. Models for self-interacting DM are increasingly important in the study of the small scale clustering of DM, and are compatible with current cosmological observations. Here we derive the $J$-factor of 20 dwarf spheroidal galaxies from stellar kinematic data under the assumption of Yukawa DM self-interactions. $J$-factors are derived through a profile Likelihood approach, assuming either NFW or cored DM profiles. We also compare our results with $J$-factors derived assuming the same velocity for all DM particles in the target galaxy. We find that this common approximation overestimates the $J$-factors by up to one order of magnitude. $J$-factors for a sample of DM particle masses, self-interaction coupling constants and density profiles are provided electronically, ready to be used in other projects. △ Less

Submitted 8 December, 2017; originally announced December 2017.

Comments: 10 pages, 3 figures and 2 tables

Journal ref: Phys. Rev. D 98, 043017 (2018)

Sensitivity analysis for unobserved confounding of direct and indirect effects using uncertainty intervals

Authors: Anita Lindmark, Xavier de Luna, Marie Eriksson

Abstract: To estimate direct and indirect effects of an exposure on an outcome from observed data strong assumptions about unconfoundedness are required. Since these assumptions cannot be tested using the observed data, a mediation analysis should always be accompanied by a sensitivity analysis of the resulting estimates. In this article we propose a sensitivity analysis method for parametric estimation of… ▽ More To estimate direct and indirect effects of an exposure on an outcome from observed data strong assumptions about unconfoundedness are required. Since these assumptions cannot be tested using the observed data, a mediation analysis should always be accompanied by a sensitivity analysis of the resulting estimates. In this article we propose a sensitivity analysis method for parametric estimation of direct and indirect effects when the exposure, mediator and outcome are all binary. The sensitivity parameters consist of the correlation between the error terms of the mediator and outcome models, the correlation between the error terms of the mediator model and the model for the exposure assignment mechanism, and the correlation between the error terms of the exposure assignment and outcome models. These correlations are incorporated into the estimation of the model parameters and identification sets are then obtained for the direct and indirect effects for a range of plausible correlation values. We take the sampling variability into account through the construction of uncertainty intervals. The proposed method is able to assess sensitivity to both mediator-outcome confounding and confounding involving the exposure. To illustrate the method we apply it to a mediation study based on data from the Swedish Stroke Register (Riksstroke). △ Less

Submitted 28 November, 2017; originally announced November 2017.

Comments: 22 pages, 5 figures

Journal ref: Statistics in Medicine, 2018