-
Ultra-smooth single crystal diamond surfaces resulting from implantation and lift-off processes
Authors:
T. N. Tran Thi,
B. Fernandez,
D. Eon,
E. Gheeraert,
J. Hartwig,
T. A. Lafford,
A. Perrat-Mabilon,
C. Peaucelle,
P. Olivero,
E. Bustarret
Abstract:
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air)…
▽ More
A method for obtaining a smooth, single crystal diamond surface is presented, whereby a sacrificial defective layer is created by implantation and graphitized by annealing before being selectively etched. We have used O+ at 240 keV, the main process variables being the ion fluence (ranging from 3x10^15 cm^-2 to 3x10^17 cm^-2) and the final etching process (wet etch, H2 plasma and annealing in air). The substrates were characterized by atomic force microscopy, optical profilometry and white beam X-ray topography. The influence of the various process parameters on the resulting lift-off efficiency and final surface roughness is discussed. An O+ fluence of 2x10^17 cm^-2 was found to result in sub-nanometre roughness over tens of um^2.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Relaxation of the resistive superconducting state in boron-doped diamond films
Authors:
A. Kardakova,
A. Shishkin,
A. Semenov,
S. Ryabchun,
J. Bousquet,
D. Eon,
B. Sacepe,
Th. Klein,
E. Bustarret,
G. N. Goltsman,
T. M. Klapwijk
Abstract:
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5x10^{21} cm^{-3} and a critical temperature of about 2 K. By changing the modulation frequency we fin…
▽ More
We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an insulating diamond substrate have a low carrier density of about 2.5x10^{21} cm^{-3} and a critical temperature of about 2 K. By changing the modulation frequency we find a high-frequency rolloff which we associate with the characterstic time of energy relaxation between the electron and the phonon systems or the relaxation time for nonequilibrium superconductivity. Our main result is that the electron-phonon scattering time varies clearly as T^{-2}, over the accessible temperature range of 1.7 to 2.2 K. In addition, we find, upon approaching the critical temperature T_c, evidence for an increasing relaxation time on both sides of T_c.
△ Less
Submitted 12 February, 2016;
originally announced February 2016.
-
Potential barrier heights at metal on oxygen-terminated diamond interfaces
Authors:
Pierre Muret,
Aboulaye Traoré,
Aurélien Maréchal,
David Eon,
Julien Pernot,
José Carlos Pinero,
Maria del Pilar Villar,
Daniel Araujo
Abstract:
Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the inte…
▽ More
Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for the measured electrical characteristics until flat bands are reached, in accordance with a model which generalizes that of R.T. Tung [Phys. Rev. B 45, 13509 (1992)] and permits to extract physically meaningful parameters of the three kinds of interface: (a) unannealed ones; (b) annealed at 350{\textdegree}C; (c) annealed at 450{\textdegree}C, with characteristic barrier heights of 2.2-2.5 V in case (a) while as low as 0.96 V in case (c). Possible models of potential barriers for several metals deposited on well defined oxygen-terminated diamond surfaces are discussed and compared to experimental data. It is concluded that interface dipoles of several kinds present at these compound interfaces and their chemical evolution due to annealing are the suitable ingredients able to account for the Mott-Schottky behavior when the effect of the metal work function is ignored, and to justify the reverted slope observed regarding metal work function, in contrast to the trend always reported for all other metal-semiconductor interfaces.
△ Less
Submitted 24 December, 2015; v1 submitted 20 January, 2015;
originally announced January 2015.
-
Highly sensitive thermal conductivity measurements of suspended membranes (SiN and diamond) using a 3w-Volklein method
Authors:
A. Sikora,
H. Ftouni,
J. Richard,
C. Hébert,
D. Eon,
F. Omnès,
O. Bourgeois
Abstract:
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$ω$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining processes allows the measurement of the in-plane thermal conductivity of a membrane with a sensitivity of less than 10nW/K (+/-$5x10^{-3}$Wm$^{-1}K^{-1}$ at room te…
▽ More
A suspended system for measuring the thermal properties of membranes is presented. The sensitive thermal measurement is based on the 3$ω$ dynamic method coupled to a V$\ddot{o}$lklein geometry. The device obtained using micro-machining processes allows the measurement of the in-plane thermal conductivity of a membrane with a sensitivity of less than 10nW/K (+/-$5x10^{-3}$Wm$^{-1}K^{-1}$ at room temperature) and a very high resolution ($ΔK/K =10^{-3}$). A transducer (heater/thermometer) centered on the membrane is used to create an oscillation of the heat flux and to measure the temperature oscillation at the third harmonic using a Wheatstone bridge set-up. Power as low as 0.1nanoWatt has been measured at room temperature. The method has been applied to measure thermal properties of low stress silicon nitride and polycrystalline diamond membranes with thickness ranging from 100 nm to 400 nm. The thermal conductivity measured on the polycrystalline diamond membrane support a significant grain size effect on the thermal transport.
△ Less
Submitted 19 January, 2012;
originally announced January 2012.
