All epitaxial self-assembly of vertically-confined silicon color centers using ultra-low temperature epitaxy
Authors:
Johannes Aberl,
Enrique Prado Navarrete,
Merve Karaman,
Diego Haya Enriquez,
Christoph Wilflingseder,
Andreas Salomon,
Daniel Primetzhofer,
Markus Andreas Schubert,
Giovanni Capellini,
Thomas Fromherz,
Peter Deák,
Péter Udvarhelyi,
Li Song,
Ádám Gali,
Moritz Brehm
Abstract:
Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically inn…
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Silicon-based color-centers (SiCCs) have recently emerged as quantum-light sources that can be combined with telecom-range Si Photonics platforms. Unfortunately, using current SiCC fabrication, deterministic control over the vertical emitter position is impossible due to ion-implantation's stochastic nature. To overcome this bottleneck towards high-yield integration, we demonstrate a radically innovative creation method for various SiCCs, solely relying on epitaxial growth of Si and C-doped Si at atypically-low temperatures in a ultra-clean growth environment. These telecom emitters can be confined within sub-1nm thick layers embedded at arbitrary vertical positions within a highly crystalline Si matrix. Tuning growth conditions and do**, different SiCC types, e.g., W-centers, T-centers, G-centers, or derivatives like G'-centers can be created, which are particularly promising as Si-based single-photon sources and spin-photon interfaces. The zero-phonon emission from G'-centers can be conveniently tuned by the C-concentration, leading to a systematic wavelength shift and linewidth narrowing towards low emitter densities.
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Submitted 21 May, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
