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Comparing Lazy Constraint Selection Strategies in Train Routing with Moving Block Control
Authors:
Stefan Engels,
Robert Wille
Abstract:
Railroad transportation plays a vital role in the future of sustainable mobility. Besides building new infrastructure, capacity can be improved by modern train control systems, e.g., based on moving blocks. At the same time, there is only limited work on how to optimally route trains using the potential gained by these systems. Recently, an initial approach for train routing with moving block cont…
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Railroad transportation plays a vital role in the future of sustainable mobility. Besides building new infrastructure, capacity can be improved by modern train control systems, e.g., based on moving blocks. At the same time, there is only limited work on how to optimally route trains using the potential gained by these systems. Recently, an initial approach for train routing with moving block control has been proposed to address this demand. However, detailed evaluations on so-called lazy constraints are missing, and no publicly available implementation exists. In this work, we close this gap by providing an extended approach as well as a flexible open-source implementation that can use different solving strategies. Using that, we experimentally evaluate what choices should be made when implementing a lazy constraint approach. The corresponding implementation and benchmarks are publicly available as part of the Munich Train Control Toolkit (MTCT) at https://github.com/cda-tum/mtct.
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Submitted 3 July, 2024; v1 submitted 29 May, 2024;
originally announced May 2024.
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Design Tasks and Their Complexity for Hybrid Level 3 of the European Train Control System
Authors:
Stefan Engels,
Tom Peham,
Judith Przigoda,
Nils Przigoda,
Robert Wille
Abstract:
Railway networks have become increasingly important in recent times, especially to move freight and public transportation from road traffic and planes to more environmentally friendly trains. Since expanding the global railway network is time and resource consuming, maximizing the rail capacity on the existing infrastructure is desirable. However, simply running more trains is infeasible as certai…
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Railway networks have become increasingly important in recent times, especially to move freight and public transportation from road traffic and planes to more environmentally friendly trains. Since expanding the global railway network is time and resource consuming, maximizing the rail capacity on the existing infrastructure is desirable. However, simply running more trains is infeasible as certain constraints enforced by the train control system must be satisfied. The capacity of a network depends (amongst others) on the distance between trains allowed by this safety system. While most signaling systems rely on fixed blocks defined by costly hardware, new specifications provided by the ETCS Hybrid Level 3 (since recently also known as ETCS Level 2 with Hybrid Train Detection) allow the usage of virtual subsections. This additional degree of freedom allows for shorter train following times and, thus, more trains on existing railway tracks. On the other hand, new design tasks arise on which automated methods might be helpful for designers of modern railway networks. However, although first approaches exist that solve design problems arising within ETCS Hybrid Level 3, neither formal descriptions nor results on the computational complexity of the corresponding design tasks exist. In this paper, we fill this gap by providing a formal description of design tasks for the Hybrid Level 3 of the European Train Control System and proofs that these tasks are NP-complete or NP-hard, respectively. By that, we are providing a solid basis for the future development of methods to solve those tasks, which will be integrated into the Munich Train Control Toolkit available at https://github.com/cda-tum/mtct.
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Submitted 3 August, 2023;
originally announced August 2023.
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Transport spectroscopy of ultraclean tunable band gaps in bilayer graphene
Authors:
E. Icking,
L. Banszerus,
F. Wörtche,
F. Volmer,
P. Schmidt,
C. Steiner,
S. Engels,
J. Hesselmann,
M. Goldsche,
K. Watanabe,
T. Taniguchi,
C. Volk,
B. Beschoten,
C. Stampfer
Abstract:
The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first…
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The importance of controlling both the charge carrier density and the band gap of a semiconductor cannot be overstated, as it opens the doors to a wide range of applications, including, e.g., highly-tunable transistors, photodetectors, and lasers. Bernal-stacked bilayer graphene is a unique van-der-Waals material that allows tuning the band gap by an out-of-plane electric field. Although the first evidence of the tunable gap was already found ten years ago, it took until recent to fabricate sufficiently clean heterostructures where the electrically induced gap could be used to fully suppress transport or confine charge carriers. Here, we present a detailed study of the tunable band gap in gated bilayer graphene characterized by temperature-activated transport and finite-bias spectroscopy measurements. The latter method allows comparing different gate materials and device technologies, which directly affects the disorder potential in bilayer graphene. We show that graphite-gated bilayer graphene exhibits extremely low disorder and as good as no subgap states resulting in ultraclean tunable band gaps up to 120 meV. The size of the band gaps are in good agreement with theory and allow complete current suppression making a wide range of semiconductor applications possible.
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Submitted 7 July, 2022; v1 submitted 4 June, 2022;
originally announced June 2022.
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SPFA: SFA on Multiple Persistent Faults
Authors:
Susanne Engels,
Falk Schellenberg,
Christof Paar
Abstract:
For classical fault analysis, a transient fault is required to be injected during runtime, e.g., only at a specific round. Instead, Persistent Fault Analysis (PFA) introduces a powerful class of fault attacks that allows for a fault to be present throughout the whole execution. One limitation of original PFA as introduced by Zhang et al. at CHES'18 is that the faulty values need to be known to the…
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For classical fault analysis, a transient fault is required to be injected during runtime, e.g., only at a specific round. Instead, Persistent Fault Analysis (PFA) introduces a powerful class of fault attacks that allows for a fault to be present throughout the whole execution. One limitation of original PFA as introduced by Zhang et al. at CHES'18 is that the faulty values need to be known to the adversary. While this was addressed at a follow-up work at CHES'20, the solution is only applicable to a single faulty value. Instead, we use the potency of Statistical Fault Analysis (SFA) in the persistent fault setting, presenting Statistical Persistent Fault Analysis (SPFA) as a more general approach of PFA. As a result, any or even a multitude of unknown faults that cause an exploitable bias in the targeted round can be used to recover the cipher's secret key. Indeed, the undesired faults in the other rounds that occur due the persistent nature of the attack converge to a uniform distribution as required by SFA. We verify the effectiveness of our attack against LED and AES.
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Submitted 28 May, 2021;
originally announced May 2021.
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Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
Authors:
S. Engels,
B. Terrés,
F. Klein,
S. Reichardt,
M. Goldsche,
S. Kuhlen,
K. Watanabe,
T. Taniguchi,
C. Stampfer
Abstract:
We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall do**, and strain are not influenced by the annealing, an initial annealing…
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We present a thermal annealing study on single-layer and bilayer (BLG) graphene encapsulated in hexagonal boron nitride. The samples are characterized by electron transport and Raman spectroscopy measurements before and after each annealing step. While extracted material properties such as charge carrier mobility, overall do**, and strain are not influenced by the annealing, an initial annealing step lowers do** and strain variations and thus results in a more homogeneous sample. Additionally, the narrow 2D-sub-peak widths of the Raman spectrum of BLG, allow us to extract information about strain and do** values from the correlation of the 2D-peak and the G-peak positions.
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Submitted 4 May, 2018;
originally announced May 2018.
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High mobility dry-transferred CVD bilayer graphene
Authors:
Michael Schmitz,
Stephan Engels,
Luca Banszerus,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Bernd Beschoten
Abstract:
We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high…
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We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can mechanically be detached from the copper foil by an hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices we extract charge carrier mobilities up to 180,000 cm$^2$/(Vs) at 2 K and up to 40,000 cm$^2$/(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ration of more than 10,000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
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Submitted 8 May, 2018; v1 submitted 14 April, 2017;
originally announced April 2017.
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Size quantization of Dirac fermions in graphene constrictions
Authors:
B. Terrés,
L. A. Chizhova,
F. Libisch,
J. Peiro,
D. Jörger,
S. Engels,
A. Girschik,
K. Watanabe,
T. Taniguchi,
S. V. Rotkin,
J. Burgdörfer,
C. Stampfer
Abstract:
Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantiz…
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Quantum point contacts (QPCs) are cornerstones of mesoscopic physics and central building blocks for quantum electronics. Although the Fermi wave-length in high-quality bulk graphene can be tuned up to hundreds of nanometers, the observation of quantum confinement of Dirac electrons in nanostructured graphene systems has proven surprisingly challenging. Here we show ballistic transport and quantized conductance of size-confined Dirac fermions in lithographically-defined graphene constrictions. At high charge carrier densities, the observed conductance agrees excellently with the Landauer theory of ballistic transport without any adjustable parameter. Experimental data and simulations for the evolution of the conductance with magnetic field unambiguously confirm the identification of size quantization in the constriction. Close to the charge neutrality point, bias voltage spectroscopy reveals a renormalized Fermi velocity ($v_F \approx 1.5 \times 10^6 m/s$) in our graphene constrictions. Moreover, at low carrier density transport measurements allow probing the density of localized states at edges, thus offering a unique handle on edge physics in graphene devices.
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Submitted 7 April, 2016; v1 submitted 2 March, 2016;
originally announced March 2016.
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Ballistic transport exceeding 28 μm in CVD grown graphene
Authors:
Luca Banszerus,
Michael Schmitz,
Stephan Engels,
Matthias Goldsche,
Kenji Watanabe,
Takashi Taniguchi,
Bernd Beschoten,
Christoph Stampfer
Abstract:
We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross…
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We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm$^2$/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
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Submitted 12 January, 2016; v1 submitted 27 November, 2015;
originally announced November 2015.
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Back action of graphene charge detectors on graphene and carbon nanotube quantum dots
Authors:
C. Volk,
S. Engels,
C. Neumann,
C. Stampfer
Abstract:
We report on devices based on graphene charge detectors (CDs) capacitively coupled to graphene and carbon nanotube quantum dots (QDs). We focus on back action effects of the CD on the probed QD. A strong influence of the bias voltage applied to the CD on the current through the QD is observed. Depending on the charge state of the QD the current through the QD can either strongly increase or comple…
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We report on devices based on graphene charge detectors (CDs) capacitively coupled to graphene and carbon nanotube quantum dots (QDs). We focus on back action effects of the CD on the probed QD. A strong influence of the bias voltage applied to the CD on the current through the QD is observed. Depending on the charge state of the QD the current through the QD can either strongly increase or completely reverse as a response to the applied voltage on the CD. To describe the observed behavior we employ two simple models based on single electron transport in QDs with asymmetrically broadened energy distributions of the source and the drain leads. The models successfully explain the back action effects. The extracted distribution broadening shows a linear dependency on the bias voltage applied to the CD. We discuss possible mechanisms mediating the energy transfer between the CD and QD and give an explanation for the origin of the observed asymmetry.
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Submitted 21 August, 2015;
originally announced August 2015.
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Limitations to Carrier Mobility and Phase-Coherent Transport in Bilayer Graphene
Authors:
S. Engels,
B. Terrés,
A. Ep**,
T. Khodkov,
K. Watanabe,
T. Taniguchi,
B. Beschoten,
C. Stampfer
Abstract:
We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and…
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We present transport measurements on high-mobility bilayer graphene fully encapsulated in hexagonal boron nitride. We show two terminal quantum Hall effect measurements which exhibit full symmetry broken Landau levels at low magnetic fields. From weak localization measurements, we extract gate-tunable phase coherence times $τ_φ$ as well as the inter- and intra-valley scattering times $τ_i$ and $τ_*$. While $τ_φ$ is in qualitative agreement with an electron-electron interaction mediated dephasing mechanism, electron spin-flip scattering processes are limiting $τ_φ$ at low temperatures. The analysis of $τ_i$ and $τ_*$ points to local strain fluctuation as the most probable mechanism for limiting the mobility in high-quality bilayer graphene.
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Submitted 30 September, 2014; v1 submitted 6 March, 2014;
originally announced March 2014.
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Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
Authors:
Nuno J. G. Couto,
Davide Costanzo,
Stephan Engels,
Dong-Keun Ki,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Stampfer,
Francisco Guinea,
Alberto F. Morpurgo
Abstract:
We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the…
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We have performed systematic investigations of transport through graphene on hexagonal boron nitride (hBN) substrates, together with confocal Raman measurements and a targeted theoretical analysis, to identify the dominant source of disorder in this system. Low-temperature transport measurements on many devices reveal a clear correlation between the carrier mobility $μ$ and the width $n^*$ of the resistance peak around charge neutrality, demonstrating that charge scattering and density inhomogeneities originate from the same microscopic mechanism. The study of weak-localization unambiguously shows that this mechanism is associated to a long-ranged disorder potential, and provides clear indications that random pseudo-magnetic fields due to strain are the dominant scattering source. Spatially resolved Raman spectroscopy measurements confirm the role of local strain fluctuations, since the line-width of the Raman 2D-peak --containing information of local strain fluctuations present in graphene-- correlates with the value of maximum observed mobility. The importance of strain is corroborated by a theoretical analysis of the relation between $μ$ and $n^*$ that shows how local strain fluctuations reproduce the experimental data at a quantitative level, with $n^*$ being determined by the scalar deformation potential and $μ$ by the random pseudo-magnetic field (consistently with the conclusion drawn from the analysis of weak-localization). Throughout our study, we compare the behavior of devices on hBN substrates to that of devices on SiO$_2$ and SrTiO$_3$, and find that all conclusions drawn for the case of hBN are compatible with the observations made on these other materials. These observations suggest that random strain fluctuations are the dominant source of disorder for high-quality graphene on many different substrates, and not only on hexagonal boron nitride.
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Submitted 14 September, 2014; v1 submitted 21 January, 2014;
originally announced January 2014.
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Etched graphene single electron transistors on hexagonal boron nitride in high magnetic fields
Authors:
A. Ep**,
S. Engels,
C. Volk,
K. Watanabe,
T. Taniguchi,
S. Trellenkamp,
C. Stampfer
Abstract:
We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in con…
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We report on the fabrication and electrical characterisation of etched graphene single electron transistors (SETs) of various sizes on hexagonal boron nitride (hBN) in high magnetic fields. The electronic transport measurements show a slight improvement compared to graphene SETs on SiO2. In particular, SETs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T in contrast to measurements reported on SETs on SiO2. This result indicates a reduced surface disorder potential in SETs on hBN which might be an important step towards clean and more controllable graphene QDs.
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Submitted 19 November, 2013;
originally announced November 2013.
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Etched graphene quantum dots on hexagonal boron nitride
Authors:
S. Engels,
A. Ep**,
C. Volk,
S. Korte,
B. Voigtländer,
K. Watanabe,
T. Taniguchi,
S. Trellenkamp,
C. Stampfer
Abstract:
We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on Si…
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We report on the fabrication and characterization of etched graphene quantum dots (QDs) on hexagonal boron nitride (hBN) and SiO2 with different island diameters. We perform a statistical analysis of Coulomb peak spacings over a wide energy range. For graphene QDs on hBN, the standard deviation of the normalized peak spacing distribution decreases with increasing QD diameter, whereas for QDs on SiO2 no diameter dependency is observed. In addition, QDs on hBN are more stable under the influence of perpendicular magnetic fields up to 9T. Both results indicate a substantially reduced substrate induced disorder potential in graphene QDs on hBN.
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Submitted 9 August, 2013;
originally announced August 2013.
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Graphene-based charge sensors
Authors:
C. Neumann,
C. Volk,
S. Engels,
C. Stampfer
Abstract:
We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a…
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We discuss graphene nanoribbon-based charge sensors and focus on their functionality in the presence of external magnetic fields and high frequency pulses applied to a nearby gate electrode. The charge detectors work well with in-plane magnetic fields of up to 7 T and pulse frequencies of up to 20 MHz. By analyzing the step height in the charge detector's current at individual charging events in a nearby quantum dot, we determine the ideal operation conditions with respect to the applied charge detector bias. Average charge sensitivities of 1.3*10^-3 e/sqrt{Hz} can be achieved. Additionally, we investigate the back action of the charge detector current on the quantum transport through a nearby quantum dot. By setting the charge detector bias from 0 to 4.5 mV, we can increase the Coulomb peak currents measured at the quantum dot by a factor of around 400. Furthermore, we can completely lift the Coulomb blockade in the quantum dot.
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Submitted 2 April, 2013; v1 submitted 29 March, 2013;
originally announced April 2013.
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Probing relaxation times in graphene quantum dots
Authors:
Christian Volk,
Christoph Neumann,
Sebastian Kazarski,
Stefan Fringes,
Stephan Engels,
Federica Haupt,
André Müller,
Christoph Stampfer
Abstract:
Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively investigated with respect to their excitation spectrum, spin-filling sequence, and electron-hole crossover. However their relaxation dynamics remain largely un…
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Graphene quantum dots are attractive candidates for solid-state quantum bits. In fact, the predicted weak spin-orbit and hyperfine interaction promise spin qubits with long coherence times. Graphene quantum dot devices have been extensively investigated with respect to their excitation spectrum, spin-filling sequence, and electron-hole crossover. However their relaxation dynamics remain largely unexplored. This is mainly due to challenges in device fabrication, in particular regarding the control of carrier confinement and the tunability of the tunnelling barriers, both crucial to experimentally investigate decoherence times. Here, we report on pulsed-gate transient spectroscopy and relaxation time measurements of excited states in graphene quantum dots. This is achieved by an advanced device design, allowing to tune the tunnelling barriers individually down to the low MHz regime and to monitor their asymmetry with integrated charge sensors. Measuring the transient currents through electronic excited states, we estimate lower limit of charge relaxation times on the order of 60-100 ns.
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Submitted 21 March, 2013;
originally announced March 2013.
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Dielectric screening of the Kohn anomaly of graphene on hexagonal boron nitride
Authors:
F. Forster,
A. Molina-Sanchez,
S. Engels,
A. Ep**,
K. Watanabe,
T. Taniguchi,
L. Wirtz,
C. Stampfer
Abstract:
Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope a…
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Kohn anomalies in three-dimensional metallic crystals are dips in the phonon dispersion that are caused by abrupt changes in the screening of the ion-cores by the surrounding electron-gas. These anomalies are also present at the high-symmetry points Γand K in the phonon dispersion of two-dimensional graphene, where the phonon wave-vector connects two points on the Fermi surface. The linear slope around the kinks in the highest optical branch is proportional to the electron-phonon coupling. Here, we present a combined theoretical and experimental study of the influence of the dielectric substrate on the vibrational properties of graphene. We show that screening by the dielectric substrate reduces the electron-phonon coupling at the high-symmetry point K and leads to an up-shift of the Raman 2D-line. This results in the observation of a Kohn anomaly that can be tuned by screening. The exact position of the 2D-line can thus be taken also as a signature for changes in the (electron-phonon limited) conductivity of graphene.
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Submitted 12 August, 2013; v1 submitted 17 December, 2012;
originally announced December 2012.
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Transport in coupled graphene-nanotube quantum devices
Authors:
S. Engels,
P. Weber,
B. Terrés,
J. Dauber,
C. Meyer,
C. Volk,
S. Trellenkamp,
U. Wichmann,
C. Stampfer
Abstract:
We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically ex…
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We report on the fabrication and characterization of all-carbon hybrid quantum devices based on graphene and single-walled carbon nanotubes. We discuss both, carbon nanotube quantum dot devices with graphene charge detectors and nanotube quantum dots with graphene leads. The devices are fabricated by chemical vapor deposition growth of carbon nanotubes and subsequent structuring of mechanically exfoliated graphene. We study the detection of individual charging events in the carbon nanotube quantum dot by a nearby graphene nanoribbon and show that they lead to changes of up to 20% of the conductance maxima in the graphene nanoribbon acting as a good performing charge detector. Moreover, we discuss an electrically coupled graphene-nanotube junction, which exhibits a tunneling barrier with tunneling rates in the low GHz regime. This allows to observe Coulomb blockade on a carbon nanotube quantum dot with graphene source and drain leads.
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Submitted 9 August, 2013; v1 submitted 6 April, 2012;
originally announced April 2012.
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Charge detection in a bilayer graphene quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Caroline Norda,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot eve…
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We show measurements on a bilayer graphene quantum dot with an integrated charge detector. The focus lies on enabling charge detection with a 30 nm wide bilayer graphene nanoribbon located approximately 35 nm next to a bilayer graphene quantum dot with an island diameter of about 100 nm. Local resonances in the nanoribbon can be successfully used to detect individual charging events in the dot even in regimes where the quantum dot Coulomb peaks cannot be measured by conventional techniques.
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Submitted 26 October, 2011;
originally announced October 2011.
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Tunable capacitive inter-dot coupling in a bilayer graphene double quantum dot
Authors:
Stefan Fringes,
Christian Volk,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as we…
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We report on a double quantum dot which is formed in a width-modulated etched bilayer graphene nanoribbon. A number of lateral graphene gates enable us to tune the quantum dot energy levels and the tunneling barriers of the device over a wide energy range. Charge stability diagrams and in particular individual triple point pairs allow to study the tunable capacitive inter-dot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points. We extract a mutual capacitive inter-dot coupling in the range of 2 - 6 meV and an inter-dot tunnel coupling on the order of 1.5 μeV.
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Submitted 26 October, 2011;
originally announced October 2011.
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Electronic Excited States in Bilayer Graphene Double Quantum Dots
Authors:
Christian Volk,
Stefan Fringes,
Bernat Terrés,
Jan Dauber,
Stephan Engels,
Stefan Trellenkamp,
Christoph Stampfer
Abstract:
We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable int…
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We report tunneling spectroscopy experiments on a bilayer graphene double quantum dot device that can be tuned by all-graphene lateral gates. The diameter of the two quantum dots are around 50 nm and the constrictions acting as tunneling barriers are 30 nm in width. The double quantum dot features addition energies on the order of 20 meV. Charge stability diagrams allow us to study the tunable interdot coupling energy as well as the spectrum of the electronic excited states on a number of individual triple points over a large energy range. The obtained constant level spacing of 1.75 meV over a wide energy range is in good agreement with the expected single-particle energy spacing in bilayer graphene quantum dots. Finally, we investigate the evolution of the electronic excited states in a parallel magnetic field.
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Submitted 18 March, 2013; v1 submitted 10 May, 2011;
originally announced May 2011.
