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One-dimensional proximity superconductivity in the quantum Hall regime
Authors:
Julien Barrier,
Minsoo Kim,
Roshan Krishna Kumar,
Na Xin,
P. Kumaravadivel,
Lee Hague,
E. Nguyen,
A. I. Berdyugin,
Christian Moulsdale,
V. V. Enaldiev,
J. R. Prance,
F. H. L. Koppens,
R. V. Gorbachev,
K. Watanabe,
T. Taniguchi,
L. I. Glazman,
I. V. Grigorieva,
V. I. Fal'ko,
A. K. Geim
Abstract:
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applicati…
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Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.
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Submitted 25 April, 2024; v1 submitted 22 February, 2024;
originally announced February 2024.
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Dislocations in twistronic heterostructures
Authors:
V. V. Enaldiev
Abstract:
Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytic…
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Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytical displacement field across partial dislocations and determine analytic dependences of energy per unit length and width on orientation and microscopic model parameters. For AP bilayers we formulate a semi-analytical approximation for displacement fields across perfect dislocations, establishing parametric dependences for their widths and energies per unit length. In addition, we find regions in parametric space of crystal thicknesses and moiré periods for strong and weak relaxation of moiré pattern in multilayered twistronic heterostructures.
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Submitted 19 April, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
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Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures
Authors:
Isaac Soltero,
Mikhail A. Kaliteevski,
James G. McHugh,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining t…
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Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $θ\sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.
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Submitted 29 November, 2023;
originally announced November 2023.
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Non-chiral one-dimensional sates propagating inside AB/BA domain walls in bilayer graphene
Authors:
V. V. Enaldiev,
C. Moulsdale,
A. K. Geim,
V. I. Fal'ko
Abstract:
Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of q…
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Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of quasi-bound states at higher energies, where the 1D bands cross into the two-dimensional spectral continuum. We present the results of modeling of electronic properties of AB/BA domain walls with and without magnetic field as a function of their width and interlayer bias.
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Submitted 26 July, 2023;
originally announced July 2023.
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Twirling and spontaneous symmetry breaking of domain wall networks in lattice-reconstructed heterostructures of 2D materials
Authors:
M. A. Kaliteevsky,
V. V. Enaldiev,
V. I. Fal'ko
Abstract:
Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides ha…
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Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides have broken-symmetry structures featuring twisted nodes ('twirls') of domain wall networks. Analysing twist-angle-dependences of strain characteristics for the broken-symmetry structures we show that the formation of twirl reduces amount of hydrostatic strain around the nodes, potentially, reducing their infuence on the band edge energies of electrons and holes.
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Submitted 22 May, 2023;
originally announced May 2023.
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Moiré Superstructures in Marginally-Twisted NbSe$_2$ Bilayers
Authors:
J. G. McHugh,
V. V. Enaldiev,
V. I. Fal'ko
Abstract:
The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment…
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The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment angles $θ_P$ < 2.9$^o$ and $θ_{AP}$ < 1.2$^o$ for parallel (P) and antiparallel (AP) orientation of monolayers' unit cells, respectively. Multiscale modelling reveals the formation of domains and domain walls with distinct stacking, for which density functional theory (DFT) calculations are used to map the shape of the bilayer Fermi surface and the relative phase of the CDW order in adjacent layers. We find a significant modulation of interlayer coupling across the moiré superstructure and the existence of preferred interlayer orientations of the CDW phase, necessitating the nucleation of CDW discommensurations at superlattice domain walls.
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Submitted 9 October, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
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Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
J. G. McHugh,
V. I. Fal'ko
Abstract:
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-I…
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Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for $θ<0.5^{\circ}$, leads to a red-shift of their recombination line producing single photon emitters (SPE) broadly tuneable around 1\,eV by misalignment angle. These self-organised dots can form in bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population of the quantum dot states.
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Submitted 24 October, 2022; v1 submitted 14 April, 2022;
originally announced April 2022.
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Quasi-stationary near-gate plasmons in van der Waals heterostructures
Authors:
A. A. Zabolotnykh,
V. V. Enaldiev,
V. A. Volkov
Abstract:
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structure…
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Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structures the near-gate plasmons form gate-size-quantized quasi-stationary discrete modes even in the collisionless limit. Belonging to continuum spectrum of two-dimensional plasmons outside of the disk-gate, the near-gate plasmons are manifested as Fano-like resonances in frequency and magnetodispersions of scattering cross-section of the former scattered off the region under the gate. This enables to recover spectrum of the near-gate plasmons in the van der Waals heterostructures using near-field imaging techniques.
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Submitted 2 December, 2021; v1 submitted 19 November, 2021;
originally announced November 2021.
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A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors
Authors:
V. V. Enaldiev,
F. Ferreira,
V. I. Fal'ko
Abstract:
Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully p…
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Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period.
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Submitted 1 November, 2021;
originally announced November 2021.
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Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers
Authors:
S. J. Magorrian,
V. V. Enaldiev,
V. Zólyomi,
Fábio Ferreira,
Vladimir I. Fal'ko,
David A. Ruiz-Tijerina
Abstract:
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (…
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Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.
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Submitted 28 September, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
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Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene
Authors:
Aitor Garcia-Ruiz,
Haiyao Deng,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms tha…
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We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms that reflect all details of the full SWMcC model of graphite. We find that these terms introduce some electron-hole asymmetry in the band structure of twisted bilayers, but in twistronic multilayer graphene, they produce only a subtle change of moire miniband spectra, confirming the broad applicability of the minimal model for implementing the twisted interface coupling in such systems.
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Submitted 30 April, 2021;
originally announced May 2021.
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Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
Authors:
F. Ferreira,
V. V. Enaldiev,
V. I. Fal'ko,
S. J. Magorrian
Abstract:
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge trans…
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In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
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Submitted 7 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
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Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and el…
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Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swap** their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps for the interlayer excitons for all angles. In 3R-type bilayers, both electrons and holes are trapped in triangular "3R stacking" domains, where WX$_2$ chalcogens set over MoX$_2$ molybdenums, which act as $130$\,meV deep quantum boxes for interlayer excitons for twist angles $\lesssim 1^{\circ}$, for larger angles shifting towards domain wall network XX stacking sites.
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Submitted 4 February, 2021; v1 submitted 9 November, 2020;
originally announced November 2020.
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Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides
Authors:
V. V. Enaldiev,
V. Zólyomi,
C. Yelgel,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Pa…
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We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.
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Submitted 5 April, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
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Collective excitations in two-component one-dimensional massless Dirac plasma
Authors:
V. V. Enaldiev
Abstract:
We study spectra of long wavelength plasma oscillations in a system of two energy splitted one-dimensional (1D) massless Dirac fermion subbands coupled by spin-orbit interaction. Such a system may be formed by edge subbands in semiconducting transition metal dichalcogenide monolayers. Intrasubband transitions of massless Dirac fermions give rise to optical and acoustic gapless branches of intrasub…
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We study spectra of long wavelength plasma oscillations in a system of two energy splitted one-dimensional (1D) massless Dirac fermion subbands coupled by spin-orbit interaction. Such a system may be formed by edge subbands in semiconducting transition metal dichalcogenide monolayers. Intrasubband transitions of massless Dirac fermions give rise to optical and acoustic gapless branches of intrasubband 1D plasmons. We reveal that the optical branch is of quantum character with group velocity being inverse proportional to square root of the Planck constant, whereas the acoustic branch is classical one with group velocity proportional to geometric mean of the edge subband velocities. Spin-orbit interaction, allowing intersubband transitions in the system, results in emergence of two branches of intersubband 1D plasmons: upper and lower ones. The upper and lower branches are gapped at small wave vectors and evolve with positive and negative group velocities, respectively, from energy splitting of the edge subbands at Fermi-level. The both intersubband branches adjoin intersubband single particle excitation continuum from above, while in case of the edge subbands with unequal velocities the lower one experiences Landau dam** at small wave vectors. In addition, the lower branch, attaining zero frequency at a non-zero wave vector, alters its group velocity from negative to positive one.
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Submitted 15 August, 2018;
originally announced August 2018.
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Quantum Confinement and Heavy Surface States of Dirac Fermions in Bismuth (111) Films: an Analytical Approach
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective…
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Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective Dirac equation. The boundary condition is described by two real parameters that are expressed by a linear combination of the Dresselhaus and Rashba interface spin-orbit interaction parameters. In semi-infinite Bi(111), near $\overline{\rm M}$-point the surface states possess anisotropical parabolic dispersion with very heavy effective mass in $\overline{\rm Γ}-\overline{\rm M}$ direction order of ten free electron masses, and light effective mass in $\overline{\rm M}-\overline{\rm K}$ direction order of one hundredth of free electron mass. In Bi(111) films with equivalent surfaces, the surface states from top and bottom surfaces are not splitted. In such symmetric film with arbitrary thickness, bottom of the lowest quantum confinement subband in conduction band coincides with the bottom of bulk conduction band in $\overline{\rm M}$-point.
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Submitted 24 March, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
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Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers
Authors:
V. V. Enaldiev
Abstract:
We develop an analytical theory for edge states in monolayers of transition metal dichalcogenides based on a general boundary condition for a two-band ${\bf kp}$-Hamiltonian in case of uncoupled valleys. Taking into account {\it edge} spin-orbit interaction we reveal that edge states, in general, have linear dispersion that is determined by three real phenomenological parameters in the boundary co…
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We develop an analytical theory for edge states in monolayers of transition metal dichalcogenides based on a general boundary condition for a two-band ${\bf kp}$-Hamiltonian in case of uncoupled valleys. Taking into account {\it edge} spin-orbit interaction we reveal that edge states, in general, have linear dispersion that is determined by three real phenomenological parameters in the boundary condition. In absence of the edge spin-orbit interaction, edge states are described by a single real parameter whose sign determines whether their spectra intersect the bulk gap or not. In the former case we show that illumination by circularly polarised light results in spin and valley polarised photocurrent along the edge. Flow direction, spin and valley polarisation of the edge photocurrent are determined by the direction of circular polarisation of the illuminated light.
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Submitted 21 December, 2017; v1 submitted 2 November, 2017;
originally announced November 2017.
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Resonance Absorption of Terahertz Radiation in Nanoperforated Graphene
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It…
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Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It is shown that the irradiation of this system by circularly polarized terahertz radiation leads to a resonance in absorption in one of the valleys. The magnitude of absorption at the resonance frequency can be controlled by means of gate voltage.
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Submitted 11 March, 2017;
originally announced March 2017.
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Surface States of a System of Dirac Fermions: A Minimal Model
Authors:
V. A. Volkov,
V. V. Enaldiev
Abstract:
A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this mo…
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A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this model are discussed.
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Submitted 9 March, 2017;
originally announced March 2017.
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Resonant Enhancement of Second Harmonic Generation by Edge States in Transition Metal Dichalcogenide Monolayers
Authors:
V. V. Enaldiev
Abstract:
We derive a low-energy theory for edge states in transition metal dichalcogenide monolayers for a two-band $\bm{kp}$-Hamiltonian in case of uncoupled valleys. In the absence of spin-orbit interaction at the edge, these states possess a linear dispersion described by a single phenomenological parameter characterizing the edge structure. Depending on the sign of the parameter, the edge state spectru…
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We derive a low-energy theory for edge states in transition metal dichalcogenide monolayers for a two-band $\bm{kp}$-Hamiltonian in case of uncoupled valleys. In the absence of spin-orbit interaction at the edge, these states possess a linear dispersion described by a single phenomenological parameter characterizing the edge structure. Depending on the sign of the parameter, the edge state spectrum can either cross the band gap or lie outside of it. In the first case, the presence of edge states leads to resonant enhancement of the second harmonic generation at frequencies about the half of the band gap, in agreement with recent experiments. The value of the phenomenological boundary parameter is extracted from the resonance frequency position.
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Submitted 28 September, 2016;
originally announced September 2016.
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Resonant electron scattering by graphene antidot
Authors:
I. V. Zagorodnev,
Zh. A. Devizorova,
V. V. Enaldiev
Abstract:
The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of…
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The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width -- by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects (charged nanohole) on the edge states and show that they do not affect the presence of the resonances, but can substantially influence their position, height and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.
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Submitted 29 September, 2015;
originally announced September 2015.
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Aharonov-Bohm oscillations caused by non-topological surface states in Dirac nanowires
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cyli…
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One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cylindrical nanowire, which is described by the 3D Dirac equation with a general $T$-invariant boundary condition. The boundary condition is determined by a single phenomenological parameter whose sign defines topological-like and non-topological surface states. The non-topological surface states emerge outside the gap. In longitudinal magnetic field $B$ they lead to Aharonov-Bohm amendment for the density of states and correspondingly for conductivity of the nanowire. The phase of these magnetooscillations increases with $B$ from $π$ to $2π$.
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Submitted 9 March, 2017; v1 submitted 24 September, 2015;
originally announced September 2015.
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Transport of Massless Dirac Fermions in Non-topological Type Edge States
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties…
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There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
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Submitted 4 March, 2015;
originally announced March 2015.
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Boundary Conditions and Surface States Spectra in Topological Insulators
Authors:
V. V. Enaldiev,
I. V. Zagorodnev,
V. A. Volkov
Abstract:
We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly de…
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We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly depend on both bulk Hamiltonian parameters and crystal potential behavior near the crystal surface. Space symmetry reduces the number of the boundary parameters to four real parameters in the 2D case and three in the 3D case. We found that the boundary parameters may strongly affect not only an energy spectrum but even the very existence of these states inside the bulk gap near the Brillouin zone center. Nevertheless, we reveal in frames of the tight-binding model that when surface states do not exist in the bulk gap in the Brillouin zone center they cross the gap in other points of the Brillouin zone in agreement with the bulk-boundary correspondence.
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Submitted 25 February, 2015; v1 submitted 3 July, 2014;
originally announced July 2014.
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Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from…
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Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skip** cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene
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Submitted 3 October, 2013;
originally announced October 2013.
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Quantum confinement, energy spectra and backscattering of Dirac fermions in quantum wire in magnetic field
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At…
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We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At the wire surface with a0 > 0 (a0 < 0) the surface states form 1D massive subbands inside (outside) the bulk gap. The longitudinal magnetic field transforms the energy spectra. In the limit of the thick wires and the weak magnetic fields, the 1D massless surface subbands arise at half- integer number of magnetic flux quanta passing through the wire cross section. We reveal conditions when backscattering of the surface Dirac fermions by a non-magnetic impurity is suppressed. In addition, we calculate a conductance formed by the massless surface Dirac fermions in the magnetic field in collisional and ballistic regimes.
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Submitted 10 September, 2013;
originally announced September 2013.
