-
Tunnel junctions based on interfacial 2D ferroelectrics
Authors:
Yunze Gao,
Astrid Weston,
Vladimir Enaldiev,
Eli Castanon,
Wendong Wang,
James E. Nunn,
Amy Carl,
Hugo De Latour,
Xiao Li,
Alex Summerfield,
Andrey Kretinin,
Nicholas Clark,
Neil Wilson,
Vladimir I. Falko,
Roman Gorbachev
Abstract:
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switc…
▽ More
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the observation of out-of-plane room temperature ferroelectricity in twisted rhombohedral (R) bilayers of transition metal dichalcogenides (TMDs). Here we explore the switching behaviour of sliding ferroelectricity using scanning probe microscopy domain map** and tunnelling transport measurements. We observe well-pronounced ambipolar switching behaviour in ferroelectric tunnelling junctions (FTJ) with composite ferroelectric/non-polar insulator barriers and support our experimental results with complementary theoretical modelling. Furthermore, we show that the switching behaviour is strongly influenced by the underlying domain structure, allowing fabrication of diverse FTJ devices with various functionalities. We show that to observe the polarisation reversal, at least one partial dislocation must be present in the device area. This behaviour is drastically different from that of conventional ferroelectric materials and its understanding is an important milestone for future development of optoelectronic devices based on sliding ferroelectricity.
△ Less
Submitted 14 March, 2024;
originally announced March 2024.
-
One-dimensional proximity superconductivity in the quantum Hall regime
Authors:
Julien Barrier,
Minsoo Kim,
Roshan Krishna Kumar,
Na Xin,
P. Kumaravadivel,
Lee Hague,
E. Nguyen,
A. I. Berdyugin,
Christian Moulsdale,
V. V. Enaldiev,
J. R. Prance,
F. H. L. Koppens,
R. V. Gorbachev,
K. Watanabe,
T. Taniguchi,
L. I. Glazman,
I. V. Grigorieva,
V. I. Fal'ko,
A. K. Geim
Abstract:
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applicati…
▽ More
Extensive efforts have been undertaken to combine superconductivity and the quantum Hall effect so that Cooper-pair transport between superconducting electrodes in Josephson junctions is mediated by one-dimensional edge states. This interest has been motivated by prospects of finding new physics, including topologically-protected quasiparticles, but also extends into metrology and device applications. So far it has proven challenging to achieve detectable supercurrents through quantum Hall conductors. Here we show that domain walls in minimally twisted bilayer graphene support exceptionally robust proximity superconductivity in the quantum Hall regime, allowing Josephson junctions to operate in fields close to the upper critical field of superconducting electrodes. The critical current is found to be non-oscillatory and practically unchanging over the entire range of quantizing fields, with its value being limited by the quantum conductance of ballistic, strictly one-dimensional electronic channels residing within the domain walls. The system described is unique in its ability to support Andreev bound states at quantizing fields and offers many interesting directions for further exploration.
△ Less
Submitted 25 April, 2024; v1 submitted 22 February, 2024;
originally announced February 2024.
-
Dislocations in twistronic heterostructures
Authors:
V. V. Enaldiev
Abstract:
Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytic…
▽ More
Long-period moiré superlattices at the twisted interface of van der Waals heterostructures relax into preferential-stacking domains separated by dislocation networks. Here, we develop a mesoscale theory for dislocations in the networks formed in twistronic bilayers with parallel (P) and antiparallel (AP) alignment of unit cells across the twisted interface. For P bilayers we find an exact analytical displacement field across partial dislocations and determine analytic dependences of energy per unit length and width on orientation and microscopic model parameters. For AP bilayers we formulate a semi-analytical approximation for displacement fields across perfect dislocations, establishing parametric dependences for their widths and energies per unit length. In addition, we find regions in parametric space of crystal thicknesses and moiré periods for strong and weak relaxation of moiré pattern in multilayered twistronic heterostructures.
△ Less
Submitted 19 April, 2024; v1 submitted 7 December, 2023;
originally announced December 2023.
-
Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures
Authors:
Isaac Soltero,
Mikhail A. Kaliteevski,
James G. McHugh,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining t…
▽ More
Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $θ\sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.
△ Less
Submitted 29 November, 2023;
originally announced November 2023.
-
Non-chiral one-dimensional sates propagating inside AB/BA domain walls in bilayer graphene
Authors:
V. V. Enaldiev,
C. Moulsdale,
A. K. Geim,
V. I. Fal'ko
Abstract:
Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of q…
▽ More
Boundaries between structural twins of bilayer graphene (so-called AB/BA domain walls) are often discussed in terms of the formation of topologically protected valley-polarised chiral states. Here, we show that, depending on the width of the AB/BA boundary, the latter can also support non-chiral one-dimensional (1D) states that are confined to the domain wall at low energies and take the form of quasi-bound states at higher energies, where the 1D bands cross into the two-dimensional spectral continuum. We present the results of modeling of electronic properties of AB/BA domain walls with and without magnetic field as a function of their width and interlayer bias.
△ Less
Submitted 26 July, 2023;
originally announced July 2023.
-
Twirling and spontaneous symmetry breaking of domain wall networks in lattice-reconstructed heterostructures of 2D materials
Authors:
M. A. Kaliteevsky,
V. V. Enaldiev,
V. I. Fal'ko
Abstract:
Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides ha…
▽ More
Lattice relaxation in twistronic bilayers with close lattice parameters and almost perfect crystallographic alignment of the layers results in the transformation of moiré pattern into a sequence of preferential stacking domains and domain wall networks. Here, we show that reconstructed moiré superlattices of the perfectly aligned heterobilayers of same-chalcogen transition metal dichalcogenides have broken-symmetry structures featuring twisted nodes ('twirls') of domain wall networks. Analysing twist-angle-dependences of strain characteristics for the broken-symmetry structures we show that the formation of twirl reduces amount of hydrostatic strain around the nodes, potentially, reducing their infuence on the band edge energies of electrons and holes.
△ Less
Submitted 22 May, 2023;
originally announced May 2023.
-
Mixed-Stacking Few-Layer Graphene as an Elemental Weak Ferroelectric Material
Authors:
Aitor Garcia-Ruiz,
Vladimir Enaldiev,
Andrew McEllistrim,
Vladimir I. Fal'ko
Abstract:
Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for elemental solids, few-layer graphenes can host an equilibrium out-of-plane electric polarisation, switchable by sliding the constituent graphene sheets. The systems…
▽ More
Ferroelectricity (Valasek, J. Phys. Rev. 1921, 17, 475) - a spontaneous formation of electric polarisation - is a solid state phenomenon, usually, associated with ionic compounds or complex materials. Here we show that, atypically for elemental solids, few-layer graphenes can host an equilibrium out-of-plane electric polarisation, switchable by sliding the constituent graphene sheets. The systems hosting such effect include mixed-stacking tetralayers and thicker (5-9 layers) rhombohedral graphitic films with a twin boundary in the middle of a flake. The predicted electric polarisation would also appear in marginally (small-angle) twisted few-layer flakes, where lattice reconstruction would give rise to networks of mesoscale domains with alternating value and sign of out-of-plane polarisation.
△ Less
Submitted 18 May, 2023;
originally announced May 2023.
-
Moiré Superstructures in Marginally-Twisted NbSe$_2$ Bilayers
Authors:
J. G. McHugh,
V. V. Enaldiev,
V. I. Fal'ko
Abstract:
The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment…
▽ More
The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment angles $θ_P$ < 2.9$^o$ and $θ_{AP}$ < 1.2$^o$ for parallel (P) and antiparallel (AP) orientation of monolayers' unit cells, respectively. Multiscale modelling reveals the formation of domains and domain walls with distinct stacking, for which density functional theory (DFT) calculations are used to map the shape of the bilayer Fermi surface and the relative phase of the CDW order in adjacent layers. We find a significant modulation of interlayer coupling across the moiré superstructure and the existence of preferred interlayer orientations of the CDW phase, necessitating the nucleation of CDW discommensurations at superlattice domain walls.
△ Less
Submitted 9 October, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
-
Ferroelectric switching at symmetry-broken interfaces by local control of dislocation networks
Authors:
Laurent Molino,
Leena Aggarwal,
Vladimir Enaldiev,
Ryan Plumadore,
Vladimir Falko,
Adina Luican-Mayer
Abstract:
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional mate…
▽ More
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible evolution understood using a string-like model of the domain wall network. We identify two characteristic regimes of domain evolution: (i) elastic bending of partial screw dislocations separating smaller domains with twin stacking and (ii) formation of perfect screw dislocations by merging pairs of primary domain walls. We also show that the latter act as the seeds for the reversible restoration of the inverted polarisation. These results open the possibility to achieve full control over atomically thin semiconducting ferroelectric domains using local electric fields, which is a critical step towards their technological use.
△ Less
Submitted 6 October, 2022;
originally announced October 2022.
-
Scaleability of dielectric susceptibility $ε_{zz}$ with the number of layers and additivity of ferroelectric polarization in van der Waals semiconductors
Authors:
Fábio Ferreira,
Vladimir Enaldiev,
Vladimir Fal'ko
Abstract:
We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the external displacement field) scales linearly with the number of layers, $α_{zz}^{NL} =N α_{zz}^{1L}$, independently of the stacking configuration in…
▽ More
We study the dielectric response of few layered crystals of various transition metal dichalcogenides (TMDs) and hexagonal Boron Nitride (hBN). We showed that the out-of-plane polarizability of a multilayer crystal (which characterizes response to the external displacement field) scales linearly with the number of layers, $α_{zz}^{NL} =N α_{zz}^{1L}$, independently of the stacking configuration in the film. We also established additivity of ferroelectric polarizations of consecutive interfaces in case when such interfaces have broken inversion symmetry. Then we used the obtained data of monolayer $α_{zz}^{1L}$ to calculate the values of the dielectric susceptibilities for semiconductor TMDs and hBN bulk crystals.
△ Less
Submitted 18 June, 2022;
originally announced June 2022.
-
Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
J. G. McHugh,
V. I. Fal'ko
Abstract:
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-I…
▽ More
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for $θ<0.5^{\circ}$, leads to a red-shift of their recombination line producing single photon emitters (SPE) broadly tuneable around 1\,eV by misalignment angle. These self-organised dots can form in bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population of the quantum dot states.
△ Less
Submitted 24 October, 2022; v1 submitted 14 April, 2022;
originally announced April 2022.
-
Quasi-stationary near-gate plasmons in van der Waals heterostructures
Authors:
A. A. Zabolotnykh,
V. V. Enaldiev,
V. A. Volkov
Abstract:
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structure…
▽ More
Near-gate plasmons are a new type of plasma oscillations emerging in homogeneous two-dimensional electron systems where a gate provides partial screening of electron-electron interaction. Here we develop a theory of the near-gate plasmons in van der Waals heterostructures comprising a conducting layer separated by a thin insulator from an uncharged disk-shaped gate. We show that in these structures the near-gate plasmons form gate-size-quantized quasi-stationary discrete modes even in the collisionless limit. Belonging to continuum spectrum of two-dimensional plasmons outside of the disk-gate, the near-gate plasmons are manifested as Fano-like resonances in frequency and magnetodispersions of scattering cross-section of the former scattered off the region under the gate. This enables to recover spectrum of the near-gate plasmons in the van der Waals heterostructures using near-field imaging techniques.
△ Less
Submitted 2 December, 2021; v1 submitted 19 November, 2021;
originally announced November 2021.
-
A scalable network model for electrically tunable ferroelectric domain structure in twistronic bilayers of two-dimensional semiconductors
Authors:
V. V. Enaldiev,
F. Ferreira,
V. I. Fal'ko
Abstract:
Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully p…
▽ More
Moiré structures in small-angle-twisted bilayers of two-dimensional semiconductors with a broken-symmetry interface form arrays of ferroelectric domains with periodically alternating out-of-plane polarization. Here, we propose a network theory for the tunability of such FE domain structure by applying an electric field perpendicular to the 2D crystal. Using multiscale analysis, we derive a fully parametrized string-theory-like description of the domain wall network and show that it undergoes a qualitative change, after the arcs of partial dislocation like domain walls merge (near the network nodes) into streaks of perfect screw dislocations, which happens at a threshold displacement field dependent on the DWN period.
△ Less
Submitted 1 November, 2021;
originally announced November 2021.
-
Interfacial ferroelectricity in marginally twisted 2D semiconductors
Authors:
Astrid Weston,
Eli G Castanon,
Vladimir Enaldiev,
Fabio Ferreira,
Shubhadeep Bhattacharjee,
Shuigang Xu,
Hector Corte-Leon,
Zefei Wu,
Nickolas Clark,
Alex Summerfield,
Teruo Hashimoto,
Yunze Gao,
Wendong Wang,
Matthew Hamer,
Harriet Read,
Laura Fumagalli,
Andrey V Kretinin,
Sarah J. Haigh,
Olga Kazakova,
A. K. Geim,
Vladimir I. Fal'ko,
Roman Gorbachev
Abstract:
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crysta…
▽ More
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized in situ using channelling contrast electron microscopy. The interfacial charge transfer for the observed ferroelectric domains is quantified using Kelvin probe force microscopy and agrees well with theoretical calculations. The movement of domain walls and their bending rigidity also agrees well with our modelling results. Furthermore, we demonstrate proof-of-principle field-effect transistors, where the channel resistance exhibits a pronounced hysteresis governed by pinning of ferroelectric domain walls. Our results show a potential venue towards room temperature electronic and optoelectronic semiconductor devices with built-in ferroelectric memory functions.
△ Less
Submitted 14 August, 2021;
originally announced August 2021.
-
Multifaceted moiré superlattice physics in twisted WSe$_2$ bilayers
Authors:
S. J. Magorrian,
V. V. Enaldiev,
V. Zólyomi,
Fábio Ferreira,
Vladimir I. Fal'ko,
David A. Ruiz-Tijerina
Abstract:
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (…
▽ More
Lattice reconstruction in twisted transition-metal dichalcogenide (TMD) bilayers gives rise to piezo- and ferroelectric moiré potentials for electrons and holes, as well as a modulation of the hybridisation across the bilayer. Here, we develop hybrid $\mathbf{k}\cdot \mathbf{p}$ tight-binding models to describe electrons and holes in the relevant valleys of twisted TMD homobilayers with parallel (P) and anti-parallel (AP) orientations of the monolayer unit cells. We apply these models to describe moiré superlattice effects in twisted WSe${}_2$ bilayers, in conjunction with microscopic \emph{ab initio} calculations, and considering the influence of encapsulation, pressure and an electric displacement field. Our analysis takes into account mesoscale lattice relaxation, interlayer hybridisation, piezopotentials, and a weak ferroelectric charge transfer between the layers, and describes a multitude of possibilities offered by this system, depending on the choices of P or AP orientation, twist angle magnitude, and electron/hole valley.
△ Less
Submitted 28 September, 2021; v1 submitted 10 June, 2021;
originally announced June 2021.
-
Full Slonczewski-Weiss-McClure parametrization of few-layer twistronic graphene
Authors:
Aitor Garcia-Ruiz,
Haiyao Deng,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms tha…
▽ More
We use a hybrid k dot p theory - tight binding (HkpTB) model to describe interlayer coupling simultaneously in both Bernal and twisted graphene structures. For Bernal-aligned interfaces, HkpTB is parametrized using the full Slonczewski-Weiss-McClure (SWMcC) Hamiltonian of graphite, which is then used to refine the commonly used minimal model for twisted interfaces, by deriving additional terms that reflect all details of the full SWMcC model of graphite. We find that these terms introduce some electron-hole asymmetry in the band structure of twisted bilayers, but in twistronic multilayer graphene, they produce only a subtle change of moire miniband spectra, confirming the broad applicability of the minimal model for implementing the twisted interface coupling in such systems.
△ Less
Submitted 30 April, 2021;
originally announced May 2021.
-
Band energy landscapes in twisted homobilayers of transition metal dichalcogenides
Authors:
Fábio Ferreira,
Samuel Magorrian,
Vladimir Enaldiev,
David Ruiz-Tijerina,
Vladimir Fal'ko
Abstract:
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} superce…
▽ More
Twistronic assembly of 2D materials employs the twist angle between adjacent layers as a tuning parameter for designing the electronic and optical properties of van der Waals heterostructures. Here, we study how interlayer hybridization, weak ferroelectric charge transfer between layers, and piezoelectric response to deformations set the valence and conduction band edges across the moir{é} supercell in twistronic homobilayers of MoS$_2$, MoSe$_2$, WS$_2$ and WSe$_2$. We show that, due to the lack of inversion symmetry in the monolayer crystals, bilayers with parallel (P) and anti-parallel (AP) unit cell orientations display contrasting behaviors. For P-bilayers at small twist angles we find band edges in the middle of triangular domains of preferential stacking. In AP-bilayers at marginal twist angles ($θ_{AP} < 1^\circ$) the band edges are located in small regions around the intersections of domain walls, giving highly localized quantum dot states.
△ Less
Submitted 17 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
-
Weak ferroelectric charge transfer in layer-asymmetric bilayers of 2D semiconductors
Authors:
F. Ferreira,
V. V. Enaldiev,
V. I. Fal'ko,
S. J. Magorrian
Abstract:
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge trans…
▽ More
In bilayers of two-dimensional (2D) semiconductors with stacking arrangements which lack inversion symmetry charge transfer between the layers due to layer-asymmetric interband hybridisation can generate a potential difference between the layers. We analyse bilayers of transition metal dichalcogenides (TMDs) - in particular, WSe$_2$ - for which we find a substantial stacking-dependent charge transfer, and InSe, for which the charge transfer is found to be negligibly small. The information obtained about TMDs is then used to map potentials generated by the interlayer charge transfer across the moiré superlattice in twistronic bilayers.
△ Less
Submitted 7 June, 2021; v1 submitted 10 March, 2021;
originally announced March 2021.
-
Piezoelectric networks and ferroelectric moiré superlattice domains in twistronic WS$_2$/MoS$_2$ and WSe$_2$/MoSe$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and el…
▽ More
Twistronic van der Waals heterostrutures offer exciting opportunities for engineering optoelectronic properties of nanomaterials. Here, we use multiscale modeling to study trap** of charge carriers and excitons by ferroelectric polarisation and piezoelectric charges by domain structures in twistronic WX$_2$/MoX$_2$ bilayers (X=S,Se). For almost aligned 2H-type bilayers, we find that holes and electrons are trapped in the opposite -- WMo and XX (tungsten over molybdenum {\it versus} overlaying chalcogens) -- corners of the honeycomb domain wall network, swap** their position at a twist angle $0.2^{\circ}$, with XX corners providing $30$\,meV deep traps for the interlayer excitons for all angles. In 3R-type bilayers, both electrons and holes are trapped in triangular "3R stacking" domains, where WX$_2$ chalcogens set over MoX$_2$ molybdenums, which act as $130$\,meV deep quantum boxes for interlayer excitons for twist angles $\lesssim 1^{\circ}$, for larger angles shifting towards domain wall network XX stacking sites.
△ Less
Submitted 4 February, 2021; v1 submitted 9 November, 2020;
originally announced November 2020.
-
Stacking domains and dislocation networks in marginally twisted bilayers of transition metal dichalcogenides
Authors:
V. V. Enaldiev,
V. Zólyomi,
C. Yelgel,
S. J. Magorrian,
V. I. Fal'ko
Abstract:
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Pa…
▽ More
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\sim 2.5^{\circ}$ and $θ^{\circ}<θ^{\circ}_{AP}\sim 1^{\circ}$ for, respectively, bilayers with parallel (P) and antiparallel (AP) orientation of the monolayer unit cells and suggest how the domain structures would manifest itself in local probe scanning of marginally twisted P- and AP-bilayers.
△ Less
Submitted 5 April, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
-
Atomic reconstruction in twisted bilayers of transition metal dichalcogenides
Authors:
Astrid Weston,
Yichao Zou,
Vladimir Enaldiev,
Alex Summerfield,
Nicholas Clark,
Viktor Z'olyomi,
Abigail Graham,
Celal Yelgel,
Samuel Magorrian,
Mingwei Zhou,
Johanna Zultak,
David Hopkinson,
Alexei Barinov,
Thomas Bointon,
Andrey Kretinin,
Neil R. Wilson,
Peter H. Beton,
Vladimir I. Fal'ko,
Sarah J. Haigh,
Roman Gorbachev
Abstract:
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bil…
▽ More
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids with controlled composition, order and relative rotation of adjacent atomic planes. Here we use atomic resolution transmission electron microscopy and multiscale modeling to show that the lattice of MoS$_2$ and WS$_2$ bilayers twisted to a small angle, $θ<3^{\circ}$, reconstructs into energetically favorable stacking domains separated by a network of stacking faults. For crystal alignments close to 3R stacking, a tessellated pattern of mirror reflected triangular 3R domains emerges, separated by a network of partial dislocations which persist to the smallest twist angles. Scanning tunneling measurements show that the electronic properties of those 3R domains appear qualitatively different from 2H TMDs, featuring layer-polarized conduction band states caused by lack of both inversion and mirror symmetry. In contrast, for alignments close to 2H stacking, stable 2H domains dominate, with nuclei of an earlier unnoticed metastable phase limited to $\sim$ 5nm in size. This appears as a kagome-like pattern at $θ\sim 1^{\circ}$, transitioning at $θ\rightarrow 0$ to a hexagonal array of screw dislocations separating large-area 2H domains.
△ Less
Submitted 7 July, 2020; v1 submitted 28 November, 2019;
originally announced November 2019.
-
Collective excitations in two-component one-dimensional massless Dirac plasma
Authors:
V. V. Enaldiev
Abstract:
We study spectra of long wavelength plasma oscillations in a system of two energy splitted one-dimensional (1D) massless Dirac fermion subbands coupled by spin-orbit interaction. Such a system may be formed by edge subbands in semiconducting transition metal dichalcogenide monolayers. Intrasubband transitions of massless Dirac fermions give rise to optical and acoustic gapless branches of intrasub…
▽ More
We study spectra of long wavelength plasma oscillations in a system of two energy splitted one-dimensional (1D) massless Dirac fermion subbands coupled by spin-orbit interaction. Such a system may be formed by edge subbands in semiconducting transition metal dichalcogenide monolayers. Intrasubband transitions of massless Dirac fermions give rise to optical and acoustic gapless branches of intrasubband 1D plasmons. We reveal that the optical branch is of quantum character with group velocity being inverse proportional to square root of the Planck constant, whereas the acoustic branch is classical one with group velocity proportional to geometric mean of the edge subband velocities. Spin-orbit interaction, allowing intersubband transitions in the system, results in emergence of two branches of intersubband 1D plasmons: upper and lower ones. The upper and lower branches are gapped at small wave vectors and evolve with positive and negative group velocities, respectively, from energy splitting of the edge subbands at Fermi-level. The both intersubband branches adjoin intersubband single particle excitation continuum from above, while in case of the edge subbands with unequal velocities the lower one experiences Landau dam** at small wave vectors. In addition, the lower branch, attaining zero frequency at a non-zero wave vector, alters its group velocity from negative to positive one.
△ Less
Submitted 15 August, 2018;
originally announced August 2018.
-
Quantum Confinement and Heavy Surface States of Dirac Fermions in Bismuth (111) Films: an Analytical Approach
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective…
▽ More
Recent high-resolution angle-resolved photoemission spectroscopy experiments have given a reason to believe that pure bismuth is topologically non-trivial semimetal. We derive an analytic theory of surface and size-quantized states of Dirac fermions in Bi(111) films taking into account the new data. The theory relies on a new phenomenological momentum-dependent boundary condition for the effective Dirac equation. The boundary condition is described by two real parameters that are expressed by a linear combination of the Dresselhaus and Rashba interface spin-orbit interaction parameters. In semi-infinite Bi(111), near $\overline{\rm M}$-point the surface states possess anisotropical parabolic dispersion with very heavy effective mass in $\overline{\rm Γ}-\overline{\rm M}$ direction order of ten free electron masses, and light effective mass in $\overline{\rm M}-\overline{\rm K}$ direction order of one hundredth of free electron mass. In Bi(111) films with equivalent surfaces, the surface states from top and bottom surfaces are not splitted. In such symmetric film with arbitrary thickness, bottom of the lowest quantum confinement subband in conduction band coincides with the bottom of bulk conduction band in $\overline{\rm M}$-point.
△ Less
Submitted 24 March, 2018; v1 submitted 11 December, 2017;
originally announced December 2017.
-
Edge states and spin-valley edge photocurrent in transition metal dichalcogenide monolayers
Authors:
V. V. Enaldiev
Abstract:
We develop an analytical theory for edge states in monolayers of transition metal dichalcogenides based on a general boundary condition for a two-band ${\bf kp}$-Hamiltonian in case of uncoupled valleys. Taking into account {\it edge} spin-orbit interaction we reveal that edge states, in general, have linear dispersion that is determined by three real phenomenological parameters in the boundary co…
▽ More
We develop an analytical theory for edge states in monolayers of transition metal dichalcogenides based on a general boundary condition for a two-band ${\bf kp}$-Hamiltonian in case of uncoupled valleys. Taking into account {\it edge} spin-orbit interaction we reveal that edge states, in general, have linear dispersion that is determined by three real phenomenological parameters in the boundary condition. In absence of the edge spin-orbit interaction, edge states are described by a single real parameter whose sign determines whether their spectra intersect the bulk gap or not. In the former case we show that illumination by circularly polarised light results in spin and valley polarised photocurrent along the edge. Flow direction, spin and valley polarisation of the edge photocurrent are determined by the direction of circular polarisation of the illuminated light.
△ Less
Submitted 21 December, 2017; v1 submitted 2 November, 2017;
originally announced November 2017.
-
Plasmon-assisted resonant tunneling in graphene-based heterostructures
Authors:
V. Enaldiev,
A. Bylinkin,
D. Svintsov
Abstract:
We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted…
▽ More
We develop a theory of electron tunneling accompanied by carrier-carrier scattering in graphene - insulator - graphene heterostructures. Due to the dynamic screening of Coulomb interaction, the scattering-aided tunneling is resonantly enhanced if the transferred energy and momentum correspond to those of surface plasmons. We reveal the possible experimental manifestations of such plasmon-assisted tunneling in current-voltage curves and plasmon emission spectra of graphene-based tunnel junctions. We find that inelastic current and plasmon emission rates have sharp peaks at voltages providing equal energies, momenta and group velocities of plasmons and interlayer single-particle excitations. The strength of this resonance, which we call plasmaronic resonance, is limited by interlayer twist and plasmon lifetime. The onset of plasmon-assisted tunneling can be also marked by a cusp in the junction $I(V)$-curve at low temperatures, and the threshold voltage for such tunneling weakly depends on carrier density and persists in the presence of interlayer twist.
△ Less
Submitted 16 June, 2017;
originally announced June 2017.
-
Resonance Absorption of Terahertz Radiation in Nanoperforated Graphene
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It…
▽ More
Recent measurements of the conductivity of nanoperforated graphene are interpreted in terms of edges states existing near the edge of each nanohole. The perimetric quantization of edge states should result in the formation of a quasi-equidistant ladder of quasistationary energy levels. Dirac fermions filling this ladder rotate about each nanohole in the direction determined by the valley index. It is shown that the irradiation of this system by circularly polarized terahertz radiation leads to a resonance in absorption in one of the valleys. The magnitude of absorption at the resonance frequency can be controlled by means of gate voltage.
△ Less
Submitted 11 March, 2017;
originally announced March 2017.
-
Surface States of a System of Dirac Fermions: A Minimal Model
Authors:
V. A. Volkov,
V. V. Enaldiev
Abstract:
A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this mo…
▽ More
A brief survey is given of theoretical works on surface states (SSs) in Dirac materials. Within the formalism of envelope wave functions and boundary conditions for these functions, a minimal model is formulated that analytically describes surface and edge states of various (topological and non-topological) types in several systems with Dirac fermions (DFs). The applicability conditions of this model are discussed.
△ Less
Submitted 9 March, 2017;
originally announced March 2017.
-
Resonant Enhancement of Second Harmonic Generation by Edge States in Transition Metal Dichalcogenide Monolayers
Authors:
V. V. Enaldiev
Abstract:
We derive a low-energy theory for edge states in transition metal dichalcogenide monolayers for a two-band $\bm{kp}$-Hamiltonian in case of uncoupled valleys. In the absence of spin-orbit interaction at the edge, these states possess a linear dispersion described by a single phenomenological parameter characterizing the edge structure. Depending on the sign of the parameter, the edge state spectru…
▽ More
We derive a low-energy theory for edge states in transition metal dichalcogenide monolayers for a two-band $\bm{kp}$-Hamiltonian in case of uncoupled valleys. In the absence of spin-orbit interaction at the edge, these states possess a linear dispersion described by a single phenomenological parameter characterizing the edge structure. Depending on the sign of the parameter, the edge state spectrum can either cross the band gap or lie outside of it. In the first case, the presence of edge states leads to resonant enhancement of the second harmonic generation at frequencies about the half of the band gap, in agreement with recent experiments. The value of the phenomenological boundary parameter is extracted from the resonance frequency position.
△ Less
Submitted 28 September, 2016;
originally announced September 2016.
-
Resonant electron scattering by graphene antidot
Authors:
I. V. Zagorodnev,
Zh. A. Devizorova,
V. V. Enaldiev
Abstract:
The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of…
▽ More
The edge states which were observed on a linear edge of graphene may also persist on a curved edge. We calculate the elastic transport scattering cross section on a graphene nanohole supporting the edge states. Resonant peaks in the gate voltage dependence of conductivity of graphene with such nanoholes are obtained. Position and height of the resonances are determined by the localization depth of the quasibound edge states, and width -- by their lifetime. The scattering amplitude near the resonant energies has a strong valley asymmetry. We evaluate the effect of moderate edge rippling, inhomogeneity of boundary parameter along the edge, and Coulomb effects (charged nanohole) on the edge states and show that they do not affect the presence of the resonances, but can substantially influence their position, height and width. The local density of states near the nanohole also demonstrates a resonant dependence on gate voltage.
△ Less
Submitted 29 September, 2015;
originally announced September 2015.
-
Aharonov-Bohm oscillations caused by non-topological surface states in Dirac nanowires
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cyli…
▽ More
One intriguing fingerprint of surface states in topological insulators is the Aharonov-Bohm effect in magnetoconductivity of nanowires. We show that surface states in nanowires of Dirac materials (bismuth, bismuth antimony, and lead tin chalcogenides) being in non-topological phase, exhibit the same effect as amendment to magnetoconductivity of the bulk states. We consider a simple model of a cylindrical nanowire, which is described by the 3D Dirac equation with a general $T$-invariant boundary condition. The boundary condition is determined by a single phenomenological parameter whose sign defines topological-like and non-topological surface states. The non-topological surface states emerge outside the gap. In longitudinal magnetic field $B$ they lead to Aharonov-Bohm amendment for the density of states and correspondingly for conductivity of the nanowire. The phase of these magnetooscillations increases with $B$ from $π$ to $2π$.
△ Less
Submitted 9 March, 2017; v1 submitted 24 September, 2015;
originally announced September 2015.
-
Transport of Massless Dirac Fermions in Non-topological Type Edge States
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties…
▽ More
There are two types of intrinsic surface states in solids. The first type is formed on the surface of topological insulators. Recently, transport of massless Dirac fermions in the band of "topological" states has been demonstrated. States of the second type were predicted by Tamm and Shockley long ago. They do not have a topological background and are therefore strongly dependent on the properties of the surface. We study the problem of the conductivity of Tamm-Shockley edge states through direct transport experiments. Aharonov-Bohm magneto-oscillations of resistance are found on graphene samples that contain a single nanohole. The effect is explained by the conductivity of the massless Dirac fermions in the edge states cycling around the nanohole. The results demonstrate the deep connection between topological and non-topological edge states in 2D systems of massless Dirac fermions.
△ Less
Submitted 4 March, 2015;
originally announced March 2015.
-
Boundary Conditions and Surface States Spectra in Topological Insulators
Authors:
V. V. Enaldiev,
I. V. Zagorodnev,
V. A. Volkov
Abstract:
We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly de…
▽ More
We study spectra of surface states in 2D topological insulators (TIs) based on HgTe/(Hg,Cd)Te quantum wells and 3D Bi$_2$Se$_3$-type compounds by constructing a class of feasible time-reversal invariant boundary conditions (BCs) for an effective ${\bf k}{\bf p}$-Hamiltonian and a tight-binding model of the topological insulators. The BCs contain some phenomenological parameters which implicitly depend on both bulk Hamiltonian parameters and crystal potential behavior near the crystal surface. Space symmetry reduces the number of the boundary parameters to four real parameters in the 2D case and three in the 3D case. We found that the boundary parameters may strongly affect not only an energy spectrum but even the very existence of these states inside the bulk gap near the Brillouin zone center. Nevertheless, we reveal in frames of the tight-binding model that when surface states do not exist in the bulk gap in the Brillouin zone center they cross the gap in other points of the Brillouin zone in agreement with the bulk-boundary correspondence.
△ Less
Submitted 25 February, 2015; v1 submitted 3 July, 2014;
originally announced July 2014.
-
Aharonov-Bohm resistance magneto-oscillations on single-nanohole graphite and graphene structures
Authors:
Yu. I. Latyshev,
A. P. Orlov,
V. A. Volkov,
V. V. Enaldiev,
I. V. Zagorodnev,
O. F. Vyvenko,
Yu. V. Petrov,
P. Monceau
Abstract:
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from…
▽ More
Graphene is a stable single atomic layer material exhibiting two-dimensional electron gas of massless Dirac fermions of high mobility. One of the intriguing properties of graphene is a possibility of realization of the Tamm-type edge states. These states differ from the usual surface states caused by defects, impurities and other imperfections at the edge of the system, as well as they differ from the magnetic edge states caused by skip** cyclotron orbits. The Tamm states result from breaking of periodic crystal potential at the edge, they can exist even at zero magnetic field and form a conducting band. Until recently those states have been observed in graphene only by local STM technique and there were no direct experiments on their contribution to transport measurements. Here we present the experiments on Aharonov-Bohm (AB) oscillations of resistance in a single-nanohole graphite and graphene structures, it indicates the presence of conducting edge states cycling around nanohole. An estimation show the penetration depth of the edge states to be as short as about 2 nm. The oscillations persist up to temperature T=115 K and the T-range of their existence increases with a decrease of the nanohole diameter. The proposed mechanism of the AB oscillations based on the resonant intervalley backscattering of the Dirac fermions by the nanohole via the Tamm states. The experimental results are consistent with such a scenario. Our findings show a way towards interference devices operating at high temperatures on the edge states in graphene
△ Less
Submitted 3 October, 2013;
originally announced October 2013.
-
Quantum confinement, energy spectra and backscattering of Dirac fermions in quantum wire in magnetic field
Authors:
V. V. Enaldiev,
V. A. Volkov
Abstract:
We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At…
▽ More
We address the problems of an energy spectrum and backscattering of massive Dirac fermions confined in a cylindrical quantum wire. The Dirac fermions are described by the 3D Dirac equation supplemented by time-reversal-invariant boundary conditions at a surface of the wire. Even in zero magnetic field, spectra quantum-confined and surface states substantially depend on a boundary parameter a0. At the wire surface with a0 > 0 (a0 < 0) the surface states form 1D massive subbands inside (outside) the bulk gap. The longitudinal magnetic field transforms the energy spectra. In the limit of the thick wires and the weak magnetic fields, the 1D massless surface subbands arise at half- integer number of magnetic flux quanta passing through the wire cross section. We reveal conditions when backscattering of the surface Dirac fermions by a non-magnetic impurity is suppressed. In addition, we calculate a conductance formed by the massless surface Dirac fermions in the magnetic field in collisional and ballistic regimes.
△ Less
Submitted 10 September, 2013;
originally announced September 2013.
