Showing 1–6 of 6 results for author: Elphick, K

Lattice Softening in Metastable bcc CoxMn100-x(001) Ferromagnetic Layers for a Strain-Less Magnetic Tunnel Junction

Authors: Kelvin Elphick, Kenta Yoshida, Tufan Roy, Tomohiro Ichinose, Kazuma Kunimatsu, Tomoki Tsuchiya, Masahito Tsujikawa, Yasuyoshi Nagai, Shigemi Mizukami, Masafumi Shirai, Atsufumi Hirohata

Abstract: In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigat… ▽ More In spintronics, one of the long standing questions is why the MgO-based magnetic tunnel junction (MTJ) is almost the only option to achieve a large tunnelling magnetoresistance (TMR) ratio at room temperature (RT) but not as large as the theoretical prediction. This study focuses on the development of an almost strain-free MTJ using metastable bcc CoxMn100-x ferromagnetic films. We have investigated the degree of crystallisation in MTJ consisting of CoxMn100-x/MgO/CoxMn100-x (x = 66, 75, 83 and 86) in relation to their TMR ratios. Cross-sectional high resolution transmission electron microscopy (HRTEM) reveals that almost consistent lattice constants of these layers for 66 < x < 83 with maintaining large TMR ratios of 229% at RT, confirming the soft nature of the CoxMn100-x layer with some dislocations at the MgO/Co75Mn25 interfaces. For x = 86, on the other hand, the TMR ratio is found to be reduced to 142% at RT, which is partially attributed to the increased number of the dislocations at the MgO/Co86Mn14 interfaces and amorphous grains identified in the MgO barrier. Ab-initio calculations confirm the crystalline deformation stability across a broad compositional range in CoMn, proving the advantage of a strain-free interface for much larger TMR ratios. △ Less

Submitted 9 October, 2020; originally announced October 2020.

High tunnel magnetoresistance and magnetism in metastable bcc Co$_{1-x}$Mn$_x$-based magnetic tunnel junctions

Authors: Kazuma Kunimatsu, Tufan Roy, Jun Okabayashi, Kelvin Elphick, Tomoki Tsuchiya, Tomohiro Ichinose, Masahito Tsujikawa, Atsufumi Hirohata, Masafumi Shirai, Shigemi Mizukami

Abstract: Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the… ▽ More Co-rich Co$_{1-x}$Mn$_x$ alloys have hcp or fcc disordered phases and those ferromagnetic orderings are significantly deteriorated with increasing Mn concentration $x$ in bulk. On the other hand, those metastable bcc phases show properties attractive to spintronics, e.g., high tunnel magnetoresistance (TMR) ratio of more than 200% (600%) at 300 K (10 K) in magnetic tunnel junctions (MTJs) with the $x$ = 0.25 bcc alloy electrodes [Kunimatsu et al., Appl. Phys. Express 13, 083007 (2020)]. Here, we report systematic study of structure and magnetism for epitaxial thin films as well as the TMR effect in MgO(001)-barrier MTJs with electrodes comprising those bcc films. The single phase bcc Co$_{1-x}$Mn$_x$(001) films were pseudomorphically grown on Cr(001) for 0.14 < $x$ < 0.50 with a sputtering technique. The magnetization was larger than that of pure Co for $x$ = 0.14-0.25 and deceased with further increasing $x$. This behavior mainly stemmed from the composition dependence of magnetic moment of Mn that exceeded 2 $μ_B$ at the maximum, unveiled by X-ray magnetic circular dichroism. Correspondingly, within the range of 0.25 < $x$ < 0.37, the TMR ratio decreased from 620% (229%) to 450% (194%) at 10 K (300 K) as $x$ increased. We discussed the relationship between the magnetism and high TMR ratio with different $x$ with the aid of the ab-initio band structure calculations. △ Less

Submitted 8 October, 2020; originally announced October 2020.

Comments: 21 pages, 10 figures

Spin Current Generation by a Surface Plasmon Polariton

Authors: Theodorus Jonathan Wijaya, Daigo Oue, Mamoru Matsuo, Yasutoshi Ito, Kelvin Elphick, Hironaga Uchida, Mitsuteru Inoue, Atsufumi Hirohata

Abstract: Surface plasmon polariton (SPP) is an electromagnetic wave which is tightly localised beyond the diffraction limit at metallic surfaces. Recently, it is theoretically proposed that the angular momentum conversion between the SPP and electrons. In this work, we have successfully measured SPP induced spin currents, which proves the fact that the angular momenta are interconverted. Such conversion fr… ▽ More Surface plasmon polariton (SPP) is an electromagnetic wave which is tightly localised beyond the diffraction limit at metallic surfaces. Recently, it is theoretically proposed that the angular momentum conversion between the SPP and electrons. In this work, we have successfully measured SPP induced spin currents, which proves the fact that the angular momenta are interconverted. Such conversion from light to a spin current can be used as a coupler in a next generation spintronic computing with optical data transfer or storage. △ Less

Submitted 26 April, 2020; originally announced April 2020.

Anisotropy in Antiferromagnets

Authors: K O'Grady, J Sinclair, K Elphick, R Carpenter, G Vallejo-Fernandez, M I J Probert, A Hirohata

Abstract: Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN) but, to have a stable AF configuration, it is necessary that the material have a sufficient level of anisotropy so as to maintain the orientation of the given magn… ▽ More Due to the advent of antiferromagnetic (AF) spintronics there is a burgeoning interest in AF materials for a wide range of potential and actual applications. Generally, AFs are characterized via the ordering at the Neel temperature (TN) but, to have a stable AF configuration, it is necessary that the material have a sufficient level of anisotropy so as to maintain the orientation of the given magnetic state fixed in one direction. Unlike the case for ferromagnets there is little established data on the anisotropy of AFs and in particular its origins and those factors which control it. In this paper these factors are reviewed in the light of recent and established experimental data. Additionally, there is no recognized technique for the first principle determination of the anisotropy of an AF which can only be found indirectly via the exchange bias phenomenon. This technique is reviewed and in particular the implications for the nature of the anisotropy that is measured and its distribution. Finally, a strategy is proposed that would allow for the development of AF materials with controlled anisotropy for future applications. △ Less

Submitted 6 March, 2020; originally announced March 2020.

Comments: 20 pages, 11 figures, invited paper

Revealing the importance of interfaces for pure spin current transport

Authors: Alexander Pfeiffer, Robert M. Reeve, Kelvin Elphick, Atsufumi Hirohata, Mathias Kläui

Abstract: Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this w… ▽ More Spin transport phenomena underpin an extensive range of spintronic effects. In particular spin transport across interfaces occurs in most device concepts, but is so far poorly understood. As interface properties strongly impact spin transport, one needs to characterize and correlate them to the fabrication method. Here we investigate pure spin current transport across interfaces and connect this with imaging of the interfaces. We study the detection of pure spin currents via the inverse spin Hall effect in Pt and the related spin current absorption by Pt in Py-Cu-Pt lateral spin valves. Depending on the fabrication process, we either find a large (inverse) spin Hall effect signal and low spin absorption by Pt or vice versa. We explain these counter-intuitive results by the fabrication induced varying quality of the Cu/Pt interfaces, which is directly revealed via a special scanning electron microscopy technique for interface imaging and correlated to the spin transport. △ Less

Submitted 17 November, 2019; originally announced November 2019.

Comments: 23 pages, 4 figures

Journal ref: Phys. Rev. Research 3, 023110 (2021)

Magnetic tunnel junctions with a B2-ordered CoFeCrAl equiatomic Heusler alloy

Authors: Tomoki Tsuchiya, Tufan Roy, Kelvin Elphick, Jun Okabayashi, Lakhan Bainsla, Tomohiro Ichinose, Kazuya Suzuki, Masahito Tsujikawa, Masafumi Shirai, Atsufumi Hirohata, Shigemi Mizukami

Abstract: The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show tha… ▽ More The equiatomic quaternary Heusler alloy CoFeCrAl is a candidate material for spin-gapless semiconductors (SGSs). However, to date, there have been no experimental attempts at fabricating a junction device. This paper reports a fully epitaxial (001)-oriented MgO barrier magnetic tunnel junction (MTJ) with CoFeCrAl electrodes grown on a Cr buffer. X-ray and electron diffraction measurements show that the (001) CoFeCrAl electrode films with atomically flat surfaces have a $B2$-ordered phase. The saturation magnetization is 380 emu/cm$^3$, almost the same as the value given by the Slater--Pauling--like rule, and the maximum tunnel magnetoresistance ratios at 300 K and 10 K are 87% and 165%, respectively. Cross-sectional electron diffraction analysis shows that the MTJs have MgO interfaces with fewer dislocations. The temperature- and bias-voltage-dependence of the transport measurements indicates magnon-induced inelastic electron tunneling overlap** with the coherent electron tunneling. X-ray magnetic circular dichroism (XMCD) measurements show a ferromagnetic arrangement of the Co and Fe magnetic moments of $B2$-ordered CoFeCrAl, in contrast to the ferrimagnetic arrangement predicted for the $Y$-ordered state possessing SGS characteristics. Ab-initio calculations taking account of the Cr-Fe swap disorder qualitatively explain the XMCD results. Finally, the effect of the Cr-Fe swap disorder on the ability for electronic states to allow coherent electron tunneling is discussed. △ Less

Submitted 10 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. Materials 3, 084403 (2019)