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Extrinsic localized excitons in patterned 2D semiconductors
Authors:
D Yagodkin,
K Greben,
A Eljarrat,
S Kovalchuk,
M Ghorbani-Asl,
M Jain,
S Kretschmer,
N Severin,
J P Rabe,
A V Krasheninnikov,
C T Koch,
K I Bolotin
Abstract:
We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state,…
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We demonstrate a new localized excitonic state in patterned monolayer 2D semiconductors. This state is not associated with lattice disorder but is extrinsic, i.e. results from external molecules on the material surface. The signature of an exciton associated with that state is observed in the photoluminescence spectrum after electron beam exposure of several 2D semiconductors. The localized state, which is distinguished by non-linear power dependence, survives up to room temperature and is patternable down to 20 nm resolution. We probe the response of the new exciton to the changes of electron energy, nanomechanical cleaning, and encapsulation via multiple microscopic, spectroscopic, and computational techniques. All these approaches suggest that the state does not originate from irradiation-induced structural defects or spatially non-uniform strain, as commonly assumed. Instead, we show that it is extrinsic, likely a charge transfer exciton associated with the organic substance deposited onto the 2D semiconductor. By demonstrating that structural defects are not required for the formation of localized excitons, our work opens new possibilities for further understanding of these states and using them for example in chemical sensing and quantum technologies.
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Submitted 29 March, 2022; v1 submitted 28 May, 2021;
originally announced May 2021.
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A consistent picture of excitations in cubic BaSnO$_{3}$ revealed by combining theory and experiment
Authors:
Wahib Aggoune,
Alberto Eljarrat,
Dmitrii Nabok,
Klaus Irmscher,
Martina Zupancic,
Zbigniew Galazka,
Martin Albrecht,
Christoph Koch,
Claudia Draxl
Abstract:
Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\…
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Among the transparent conducting oxides, the perovskite barium stannate is most promising for various electronic applications due to its outstanding carrier mobility achieved at room temperature. However, most of its important characteristics, such as band gaps, effective masses, and absorption edge, remain controversial. Here, we provide a fully consistent picture by combining state-of-the-art {\it ab initio} methodology with forefront electron energy-loss spectroscopy and optical absorption measurements. Valence electron energy-loss spectra, featuring signals originating from band gap transitions, are acquired on defect-free sample regions of a BaSnO$_{3}$ single crystal. These high-energy-resolution measurements are able to capture also very weak excitations below the optical gap, attributed to indirect transitions. By temperature-dependent optical absorption measurements, we assess band-gap renormalization effects induced by electron-phonon coupling. Overall, we find for the effective electronic mass, the direct and the indirect gap, the optical gap, as well as the absorption onsets and spectra, excellent agreement between both experimental techniques and the theoretical many-body results, supporting also the picture of a phonon-mediated mechanism where indirect transitions are activated by phonon-induced symmetry lowering. This work demonstrates a fruitful connection between different high-level theoretical and experimental methods for exploring the characteristics of advanced materials.
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Submitted 20 March, 2022; v1 submitted 17 May, 2021;
originally announced May 2021.
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Electronic band structure of narrow-bandgap p-n nanojunctions in heterostructured nanowires measured by electron energy loss spectroscopy
Authors:
Reza R. Zamani,
Fredrik S. Hage,
Alberto Eljarrat,
Luna Namazi,
Quentin M. Ramasse,
Kimberly A. Dick
Abstract:
The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors w…
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The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence electron energy-loss spectroscopy (VEELS) in the transmission electron microscope (TEM) provides the possibility of measuring this property of semiconductors with high spatial resolution. However, it still represents a challenge for narrow-bandgap semiconductors, since an electron beam with low energy spread is required. Here we demonstrate that by means of monochromated VEELS we can study the electronic band structure of narrow-gap materials GaSb and InAs in the form of heterostructured nanowires, with bandgap values down to 0.5 eV, especially important for newly developed structures with unknown bandgaps. Using complex heterostructured InAs-GaSb nanowires, we determine a bandgap value of 0.54 eV for wurtzite InAs. Moreover, we directly compare the bandgaps of wurtzite and zinc-blende polytypes of GaSb in a single nanostructure, measured here as 0.84 and 0.75 eV, respectively. This allows us to solve an existing controversy in the band alignment between these structures arising from theoretical predictions. The findings demonstrate the potential of monochromated VEELS to provide a better understanding of the band alignment at the heterointerfaces of narrow-bandgap complex nanostructured materials with high spatial resolution. This is especially important for semiconductor device applications where even the slightest variations of the electronic band structure at the nanoscale can play a crucial role in their functionality.
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Submitted 8 March, 2021;
originally announced March 2021.
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Design and Application of a Relativistic Kramers-Kronig Analysis Algorithm
Authors:
Alberto Eljarrat,
Christoph T. Koch
Abstract:
Low-loss electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) probes the valence electron density and relevant optoelectronic properties such as band gap energies and other band structure transitions. The measured spectra can be formulated in a dielectric theory framework, comparable to optical spectroscopies and ab-initio simulations. Moreover, Kramers-…
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Low-loss electron energy loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) probes the valence electron density and relevant optoelectronic properties such as band gap energies and other band structure transitions. The measured spectra can be formulated in a dielectric theory framework, comparable to optical spectroscopies and ab-initio simulations. Moreover, Kramers-Kronig analysis (KKA), an inverse algorithm based on the homonym relations, can be employed for the retrieval of the complex dielectric function (CDF). However, spurious contributions traditionally not considered in this framework typically impact low-loss EELS modifying the spectral shapes and precluding the correct measurement and retrieval of the dielectric information. A relativistic KKA algorithm is able to account for the bulk and surface radiative-loss contributions to low-loss EELS, revealing the correct dielectric properties. Using a synthetic low-loss EELS model, we propose some modifications on the naive implementation of this algorithm that broadens its range of application. The robustness of the algorithm is improved by regularization, appliying previous knowledge about the shape and smoothness of the correction term. Additionally, our efficient numerical integration methodology allows processing hyperspectral datasets in a reasonable amount of time. Harnessing these abilities, we show how simultaneous relativistic KKA processing of several spectra can share information to produce an improved result.
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Submitted 19 November, 2018;
originally announced November 2018.
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Multi-scale Convolutional Neural Networks for Inverse Problems
Authors:
Feng Wang,
Alberto Eljarrat,
Johannes Müller,
Trond Henninen,
Erni Rolf,
Christoph Koch
Abstract:
Inverse problems exist in many domains such as phase imaging, image processing, and computer vision. These problems are often solved with application-specific algorithms, even though their nature remains the same: map** input image(s) to output image(s). Deep convolutional neural networks have shown great potential for highly variable tasks across many image-based domains, but are usually diffic…
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Inverse problems exist in many domains such as phase imaging, image processing, and computer vision. These problems are often solved with application-specific algorithms, even though their nature remains the same: map** input image(s) to output image(s). Deep convolutional neural networks have shown great potential for highly variable tasks across many image-based domains, but are usually difficult to train due to their inner high non-linearities. We propose a novel neural network architecture highlighting fast convergence as a generic solution addressing image(s)-to-image(s) inverse problems of different domains. Here we show that this approach is effective at predicting phases from direct intensity measurements, imaging objects from diffused reflections and denoising scanning transmission electron microscopy images, with just different training datasets. This opens a way to solve problems statistically through big data, in contrast to implementing explicit inversion algorithms from their mathematical formulas. Previous works have targeted much more on \textit{how} can we reconstruct rather than \textit{what} can be reconstructed. Our strategy offers a paradigm shift.
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Submitted 12 August, 2019; v1 submitted 29 October, 2018;
originally announced October 2018.
