Showing 1–2 of 2 results for author: Elias, J A
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Unexpected hole do** of graphene by osmium adatoms
Authors:
Jamie A. Elias,
Erik A. Henriksen
Abstract:
The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-d…
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The electronic transport of monolayer graphene devices is studied before and after \emph{in situ} deposition of a sub-monolayer coating of osmium adatoms. Unexpectedly, and unlike all other metallic adatoms studied to date, osmium adatoms shift the charge neutrality point to more positive gate voltages. This indicates that osmium adatoms act as electron acceptors and thus leave the graphene hole-doped. Analysis of transport data suggest that Os adatoms behave as charged impurity scatterers, albeit with a surprisingly low charge-do** efficiency. The charge neutrality point of graphene is found to vary non-monotonically with gate voltage as the sample is warmed to room temperature, suggesting that osmium diffuses on the surface but is not completely removed.
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Submitted 9 December, 2019;
originally announced December 2019.
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Electronic transport and scattering times in tungsten-decorated graphene
Authors:
Jamie A. Elias,
Erik A. Henriksen
Abstract:
The electronic transport properties of monolayer graphene have been studied before and after the deposition of a dilute coating of tungsten adatoms on the surface. For coverages up to 2.5\% of a monolayer, we find tungsten adatoms simultaneously donate electrons to graphene and reduce the carrier mobility, impacting the zero- and finite-field transport properties. Two independent transport analyse…
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The electronic transport properties of monolayer graphene have been studied before and after the deposition of a dilute coating of tungsten adatoms on the surface. For coverages up to 2.5\% of a monolayer, we find tungsten adatoms simultaneously donate electrons to graphene and reduce the carrier mobility, impacting the zero- and finite-field transport properties. Two independent transport analyses suggest the adatoms lie nearly 1 nm above the surface. The presence of adatoms is also seen to impact the low field magnetoresistance, altering the signatures of weak localization.
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Submitted 31 October, 2016; v1 submitted 28 October, 2016;
originally announced October 2016.
