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High transparency induced superconductivity in field effect two-dimensional electron gases in undoped InAs/AlGaSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
A. Elbaroudy,
A. W. M. Jordan,
F. Thompson,
George Nichols,
Y. Shi,
Man Chun Tam,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in 24 nm wide indium arsenide surface quantum wells. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=2$ in magnetic fields of up to B = 18 T, at electron densities up to 8$\times 10^{11}$ /cm$^2$. Peak mobility is 11,000 cm$^2$/Vs at 2$\times 10^{12}$ /cm$^2$. Large Rashba spin-orbit coefficients up to 124 meV$\cdot$Å are obtained through weak anti-localization (WAL) measurements. Proximitized superconductivity is demonstrated in Nb-based superconductor-normal-superconductor (SNS) junctions, yielding 78$-$99% interface transparencies from superconducting contacts fabricated ex-situ (post-growth), using two commonly-used experimental techniques for measuring transparencies. These transparencies are on a par with those reported for epitaxially-grown superconductors. These SNS junctions show characteristic voltages $I_c R_{\text{N}}$ up to 870 $μ$V and critical current densities up to 9.6 $μ$A/$μ$m, among the largest values reported for Nb-InAs SNS devices.
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Submitted 22 May, 2024;
originally announced May 2024.
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Observation of an Abrupt 3D-2D Morphological Transition in Thin Al Layers Grown by MBE on InGaAs surface
Authors:
A. Elbaroudy,
B. Khromets,
F. Sfigakis,
E. Bergeron,
Y. Shi,
M. C. A. Tam,
T. Blaikie,
George Nichols,
J. Baugh,
Z. R. Wasilewski
Abstract:
Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a th…
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Among superconductor/semiconductor hybrid structures, in-situ aluminum (Al) grown on InGaAs/InAs is widely pursued for the experimental realization of Majorana Zero Mode quasiparticles. This is due to the high carrier mobility, low effective mass, and large Landé g-factor of InAs, coupled with the relatively high value of the in-plane critical magnetic field in thin Al films. However, growing a thin, continuous Al layer using the Molecular Beam Epitaxy (MBE) is challenging due to aluminum's high surface mobility and tendency for 3D nucleation on semiconductor surfaces. A study of epitaxial Al thin film growth on In0.75Ga0.25As with MBE is presented, focusing on the effects of the Al growth rate and substrate temperature on the nucleation of Al layers. We find that for low deposition rates, 0.1 Å/s and 0.5 Å/s, the growth continues in 3D mode during the deposition of the nominal 100 Å of Al, resulting in isolated Al islands. However, for growth rates of 1.5 Å/s and above, the 3D growth mode quickly transitions into island coalescence, leading to a uniform 2D Al layer. Moreover, this transition is very abrupt, happening over an Al flux increase of less than 1%. We discuss the growth mechanisms explaining these observations. The results give new insights into the kinetics of Al deposition and show that with sufficiently high Al flux, a 2D growth on substrates at close to room temperature can be achieved already within the first few Al monolayers. This eliminates the need for complex cryogenic substrate cooling and paves the way for the development of high-quality superconductor-semiconductor interfaces in standard MBE systems.
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Submitted 19 April, 2024; v1 submitted 27 January, 2024;
originally announced January 2024.
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Field effect two-dimensional electron gases in modulation-doped InSb surface quantum wells
Authors:
E. Annelise Bergeron,
F. Sfigakis,
Y. Shi,
George Nichols,
P. C. Klipstein,
A. Elbaroudy,
Sean M. Walker,
Z. R. Wasilewski,
J. Baugh
Abstract:
We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are obser…
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We report on transport characteristics of field effect two-dimensional electron gases (2DEG) in surface indium antimonide quantum wells. The topmost 5 nm of the 30 nm wide quantum well is doped and shown to promote the formation of reliable, low resistance Ohmic contacts to surface InSb 2DEGs. High quality single-subband magnetotransport with clear quantized integer quantum Hall plateaus are observed to filling factor $ν=1$ in magnetic fields of up to $B=18$ T. We show that the electron density is gate-tunable, reproducible, and stable from pinch-off to 4$\times 10^{11}$ cm$^{-2}$, and peak mobilities exceed 24,000 cm$^2$/Vs. Large Rashba spin-orbit coefficients up to 110 meV$\cdot$Å are obtained through weak anti-localization measurements. An effective mass of 0.019$m_e$ is determined from temperature-dependent magnetoresistance measurements, and a g-factor of 41 at a density of 3.6$\times 10^{11}$ cm$^{-2}$ is obtained from coincidence measurements in tilted magnetic fields. By comparing two heterostructures with and without a delta-doped layer beneath the quantum well, we find that the carrier density is stable with time when do** in the ternary Al$_{0.1}$In$_{0.9}$Sb barrier is not present. Finally, the effect of modulation do** on structural asymmetry between the two heterostructures is characterized.
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Submitted 7 January, 2023; v1 submitted 16 September, 2022;
originally announced September 2022.
