Showing 1–8 of 8 results for author: Elam, J W

Machine learning and atomic layer deposition: predicting saturation times from reactor growth profiles using artificial neural networks

Authors: Angel Yanguas-Gil, Jeffrey W. Elam

Abstract: In this work we explore the application of deep neural networks to the optimization of atomic layer deposition processes based on thickness values obtained at different points of an ALD reactor. We introduce a dataset designed to train neural networks to predict saturation times based on the dose time and thickness values measured at different points of the reactor for a single experimental condit… ▽ More In this work we explore the application of deep neural networks to the optimization of atomic layer deposition processes based on thickness values obtained at different points of an ALD reactor. We introduce a dataset designed to train neural networks to predict saturation times based on the dose time and thickness values measured at different points of the reactor for a single experimental condition. We then explore different artificial neural network configurations, including depth (number of hidden layers) and size (number of neurons in each layers) to better understand the size and complexity that neural networks should have to achieve high predictive accuracy. The results obtained show that trained neural networks can accurately predict saturation times without requiring any prior information on the surface kinetics. This provides a viable approach to minimize the number of experiments required to optimize new ALD processes in a known reactor. However, the datasets and training procedure depend on the reactor geometry. △ Less

Submitted 10 May, 2022; originally announced May 2022.

Reactor scale simulations of ALD and ALE: ideal and non-ideal self-limited processes in a cylindrical and a 300 mm wafer cross-flow reactor

Authors: Angel Yanguas-Gil, Joseph A. Libera, Jeffrey W. Elam

Abstract: We have developed a simulation tool to model self-limited processes such as atomic layer deposition and atomic layer etching inside reactors of arbitrary geometry. In this work, we have applied this model to two standard types of cross-flow reactors: a cylindrical reactor and a model 300 mm wafer reactor, and explored both ideal and non-ideal self-limited kinetics. For the cylindrical tube reactor… ▽ More We have developed a simulation tool to model self-limited processes such as atomic layer deposition and atomic layer etching inside reactors of arbitrary geometry. In this work, we have applied this model to two standard types of cross-flow reactors: a cylindrical reactor and a model 300 mm wafer reactor, and explored both ideal and non-ideal self-limited kinetics. For the cylindrical tube reactor the full simulation results agree well with analytic expressions obtained using a simple plug flow model, though the presence of axial diffusion tends to soften growth profiles with respect to the plug flow case. Our simulations also allowed us to model the output of in-situ techniques such as quartz crystal microbalance and mass spectrometry, providing a way of discriminating between ideal and non-ideal surface kinetics using in-situ measurements. We extended the simulations to consider two non-ideal self-limited processes: soft-saturating processes characterized by a slow reaction pathway, and processes where surface byproducts can compete with the precursor for the same pool of adsorption sites, allowing us to quantify their impact in the thickness variability across 300 mm wafer substrates. △ Less

Submitted 13 June, 2021; originally announced June 2021.

Performance of Large Area Picosecond Photo-Detectors (LAPPD)

Authors: A. V. Lyashenko, B. W. Adams, M. Aviles, T. Cremer, C. D. Ertley, M. R. Foley, M. J. Minot, M. A. Popecki, M. E. Stochaj, W. A. Worstell, J. W. Elam, A. U. Mane, O. H. W. Siegmund, H. J. Frisch, A. L. Elagin, E. Angelico, E. Spieglan

Abstract: We report on performance results achieved for recently produced LAPPDs - largest comercially available planar geometry photodetectors based on microchannel plates. These results include electron gains of up to $10^{7}$, low dark noise rates ($\sim$100 Hz/cm$^{2}$ at a gain of $6\cdot10^6$), single photoelectron (PE) timing resolution of $\sim$50 picoseconds RMS (electronics limited), and single ph… ▽ More We report on performance results achieved for recently produced LAPPDs - largest comercially available planar geometry photodetectors based on microchannel plates. These results include electron gains of up to $10^{7}$, low dark noise rates ($\sim$100 Hz/cm$^{2}$ at a gain of $6\cdot10^6$), single photoelectron (PE) timing resolution of $\sim$50 picoseconds RMS (electronics limited), and single photoelectron spatial resolution along and across strips of 3.2mm (electronics limited) and 0.8 mm RMS respectively and high (about 25\% or higher in some units) QE uniform bi-alkali photocathodes. LAPPDs is a good candidate to be employed in neutrino experiments (e.g. ANNIE, WATCHMAN, DUNE), particle collider experiments (e.g. EIC), neutrinoless double-beta decay experiments (e.g. THEIA), medical and nuclear non-proliferation applications. △ Less

Submitted 23 September, 2019; originally announced September 2019.

Comments: accepted for publication at NIMA

Optical and structural properties of Si doped $β$-Ga$_2$O$_3$ (010) thin films homoepitaxially grown by halide vapor phase epitaxy

Authors: Bahadir Kucukgok, David J. Mandia, Jacob H. Leach, Keith R. Evans, Jeffrey A. Eastman, Hua Zhou, John Hryn, Jeffrey W. Elam, Angel Yanguas-Gil

Abstract: We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved u… ▽ More We report the optical, electrical, and structural properties of Si doped $β$-Ga$_2$O$_3$ films grown on (010)-oriented $β$-Ga$_2$O$_3$ substrate via HVPE. Our results show that, despite growth rates that are more than one order of magnitude faster than MOCVD, films with mobility values of up to 95 cm$^2$V$^{-1}$s$^{-1}$ at a carrier concentration of 1.3$\times$10$^{17}$ cm$^{-3}$ can be achieved using this technique, with all Si-doped samples showing n-type behavior with carrier concentrations in the range of 10$^{17}$ to 10$^{19}$ cm$^{-3}$. All samples showed similar room temperature photoluminescence, with only the samples with the lowest carrier concentration showing the presence of a blue luminescence, and the Raman spectra exhibiting only phonon modes that belong to $β$-Ga$_2$O$_3$, indicating that the Ga$_2$O$_3$ films are phase pure and of high crystal quality. We further evaluated the epitaxial quality of the films by carrying out grazing incidence X-ray scattering measurements, which allowed us to discriminate the bulk and film contributions. Finally, MOS capacitors were fabricated using ALD HfO$_2$ to perform C-V measurements. The carrier concentration and dielectric values extracted from the C-V characteristics are in good agreement with Hall probe measurements. These results indicate that HVPE has a strong potential to yield device-quality $β$-Ga$_2$O$_3$ films that can be utilized to develop vertical devices for high-power electronics applications. △ Less

Submitted 21 June, 2019; originally announced June 2019.

A Brief Technical History of the Large-Area Picosecond Photodetector (LAPPD) Collaboration

Authors: Bernhard W. Adams, Klaus Attenkofer, Mircea Bogdan, Karen Byrum, Andrey Elagin, Jeffrey W. Elam, Henry J. Frisch, Jean-Francois Genat, Herve Grabas, Joseph Gregar, Elaine Hahn, Mary Heintz, Zinetula Insepov, Valentin Ivanov, Sharon Jelinsky, Slade Jokely, Sun Wu Lee, Anil. U. Mane, Jason McPhate, Michael J. Minot, Pavel Murat, Kurtis Nishimura, Richard Northrop, Razib Obaid, Eric Oberla , et al. (16 additional authors not shown)

Abstract: The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\%$,… ▽ More The Large Area Picosecond PhotoDetector (LAPPD) Collaboration was formed in 2009 to develop large-area photodetectors capable of time resolutions measured in pico-seconds, with accompanying sub-millimeter spatial resolution. During the next three and one-half years the Collaboration developed the LAPPD design of 20 x 20 cm modules with gains greater than $10^7$ and non-uniformity less than $15\%$, time resolution less than 50 psec for single photons and spatial resolution of 700~microns in both lateral dimensions. We describe the R\&D performed to develop large-area micro-channel plate glass substrates, resistive and secondary-emitting coatings, large-area bialkali photocathodes, and RF-capable hermetic packaging. In addition, the Collaboration developed the necessary electronics for large systems capable of precise timing, built up from a custom low-power 15-GigaSample/sec waveform sampling 6-channel integrated circuit and supported by a two-level modular data acquisition system based on Field-Programmable Gate Arrays for local control, data-sparcification, and triggering. We discuss the formation, organization, and technical successes and short-comings of the Collaboration. The Collaboration ended in December 2012 with a transition from R\&D to commercialization. △ Less

Submitted 6 March, 2016; originally announced March 2016.

Measuring roughness of buried interfaces by sputter depth profiling

Authors: S. V. Baryshev, J. A. Klug, A. V. Zinovev, C. E. Tripa, J. W. Elam, I. V. Veryovkin

Abstract: In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions ge… ▽ More In this communication, we report results of a high resolution sputter depth profiling analysis of a stack of 16 alternating MgO and ZnO nanolayers grown by atomic layer deposition (ALD) with thickness of ~5.5 nm per layer. We used an improved dual beam approach featuring a low energy normally incident direct current sputtering ion beam (first beam). Intensities of 24Mg+ and 64Zn+ secondary ions generated by a pulsed analysis ion beam (second beam) were measured as a function of sample depth by time-of-flight secondary ion mass spectrometry (TOF SIMS). Experimental results of this dual beam TOF SIMS depth profiling processed in the framework of the mixing-roughness-information (MRI) model formalism demonstrate that such an approach is capable of providing structural information for layers just a few nm thick. Namely, it was established that the interfacial roughness of the MgO/ZnO multilayer structure equals 1.5 nm. This finding by TOF SIMS was cross-validated by independent measurements with specular X-ray reflectivity (XRR) technique. In addition, the TOF SIMS-MRI analysis suggests that the obtained 1.5 nm roughness should be attributed to the native roughness (jagged type) of the interface rather than to interdiffusion at the interface during the ALD synthesis. △ Less

Submitted 17 May, 2012; originally announced May 2012.

Comments: Brief report of 5 pages and 5 figures

High resolution SIMS depth profiling of nanolayers

Authors: S. V. Baryshev, A. V. Zinovev, C. E. Tripa, M. J. Pellin, Q. Peng, J. W. Elam, I. V. Veryovkin

Abstract: We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic layer deposition. The measurements were performed using a newly developed approach implementing a low energy direct current normally incident Ar+ ion beam for sam… ▽ More We report results of high-resolution TOF SIMS (time of flight secondary ion mass spectrometry) depth profiling experiments on a nanolayered structure, a stack of 16 alternating MgO and ZnO ~5.5 nm layers grown on a Si substrate by atomic layer deposition. The measurements were performed using a newly developed approach implementing a low energy direct current normally incident Ar+ ion beam for sample material removal by sputtering (250 eV and 500 eV energy), in combination with a pulsed 5 keV Ar+ ion beam at 60° incidence for TOF SIMS analysis. By this optimized arrangement, a noticeably improved version of known dual-beam (DB) approach to TOF SIMS depth profiling is introduced, which can be called gentleDB. We apply the mixing-roughness-information model to detailed analysis of experimental results. It reveals that the gentleDB approach allows ultimate depth resolution by confining the ion beam mixing length to about 2 monolayers. This corresponds to the escape depth of secondary ions, the fundamental depth resolution limitation in SIMS. Other parameters deduced from the measured depth profiles indicate that a single layer thickness equals to 6 nm so that "flat" layer thickness d is of 3 nm and interfacial roughness σ is of 1.5 nm thus yielding d+2\bulletσ=6 nm. In essence, we have demonstrated that the gentleDB TOF SIMS depth profiling with noble gas ion beams is capable of revealing structural features of a stack of nanolayers, resolving its original surface and estimating the roughness of interlayer interfaces, which is difficult to obtain by traditional approaches. △ Less

Submitted 27 April, 2012; originally announced April 2012.

Comments: 7 pages and 4 figures

Atomic layer deposition and superconducting properties of NbSi films

Authors: Thomas Proslier, Jeffrey A. Klug, Jeffrey W. Elam, Helmut Claus, Nicholas G. Becker, Michael Pellin

Abstract: Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepa… ▽ More Atomic layer deposition was used to synthesize niobium silicide (NbSi) films with a 1:1 stoichiometry, using NbF5 and Si2H6 as precursors. The growth mechanism at 200oC was examined by in-situ quartz crystal microbalance (QCM) and quadrupole mass spectrometer (QMS). This study revealed a self-limiting reaction with a growth rate of 4.5 Å/cycle. NbSi was found to grow only on oxide-free films prepared using halogenated precursors. The electronic properties, growth rate, chemical composition, and structure of the films were studied over the deposition temperature range 150-400oC. For all temperatures, the films are found to be stoichiometric NbSi (1:1) with no detectable fluorine impurities, amorphous with a density of 6.65g/cm3, and metallic with a resistivity ρ=150 μΩ.cm at 300K for films thicker than 35 nm. The growth rate was nearly constant for deposition temperatures between 150-275oC, but increases above 300oC suggesting the onset of non-self limiting growth. The electronic properties of the films were measured down to 1.2K and revealed a superconducting transition at Tc=3.1K. To our knowledge, a superconducting niobium silicide film with a 1:1 stoichiometry has never been grown before by any technique. △ Less

Submitted 18 April, 2011; originally announced April 2011.

Comments: 9 figures, ~ 10 pages. Poster Jeffrey Klug @ ALD conference 2010