Showing 1–7 of 7 results for author: Elalaily, T

Switching dynamics in Al/InAs nanowire-based gate-controlled superconducting switch

Authors: Tosson Elalaily, Martin Berke, Ilari Lilja, Alexander Savin, Gergő Fülöp, Lőrinc Kupás, Thomas Kanne, Jesper Nygård, Péter Makk, Pertti Hakonen, Szabolcs Csonka

Abstract: The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect… ▽ More The observation of the gate-controlled supercurrent (GCS) effect in superconducting nanostructures increased the hopes for realizing a superconducting equivalent of semiconductor field-effect transistors. However, recent works attribute this effect to various leakage-based scenarios, giving rise to a debate on its origin. A proper understanding of the microscopic process underlying the GCS effect and the relevant time scales would be beneficial to evaluate the possible applications. In this work, we observed gate-induced two-level fluctuations between the superconducting state and normal state in Al/InAs nanowires (NWs). Noise correlation measurements show a strong correlation with leakage current fluctuations. The time-domain measurements show that these fluctuations have Poissonian statistics. Our detailed analysis of the leakage current measurements reveals that it is consistent with the stress-induced leakage current (SILC), in which inelastic tunneling with phonon generation is the predominant transport mechanism. Our findings shed light on the microscopic origin of the GCS effect and give deeper insight into the switching dynamics of the superconducting NW under the influence of the strong gate voltage. △ Less

Submitted 28 May, 2024; v1 submitted 24 December, 2023; originally announced December 2023.

Effects of fabrication routes and material parameters on the control of superconducting currents by gate voltage

Authors: Leon Ruf, Tosson Elalaily, Claudio Puglia, Yurii P. Ivanov, Francois Joint, Martin Berke, Andrea Iorio, Peter Makk, Giorgio De Simoni, Simone Gasparinetti, Giorgio Divitini, Szabolcs Csonka, Francesco Giazotto, Elke Scheer, Angelo Di Bernardo

Abstract: The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronic… ▽ More The control of a superconducting current via the application of a gate voltage has been recently demonstrated in a variety of superconducting devices. Although the mechanism underlying this gate-controlled supercurrent (GCS) effect remains under debate, the GCS effect has raised great interest for the development of the superconducting equivalent of conventional metaloxide semiconductor electronics. To date, however, the GCS effect has been mostly observed in superconducting devices made by additive patterning. Here, we show that devices made by subtractive patterning show a systematic absence of the GCS effect. Doing a microstructural analysis of these devices and comparing them to devices made by additive patterning, where we observe a GCS, we identify some material and physical parameters that are crucial for the observation of a GCS. We also show that some of the mechanisms proposed to explain the origin of the GCS effect are not universally relevant. △ Less

Submitted 7 December, 2023; v1 submitted 14 April, 2023; originally announced April 2023.

Comments: 19 pages, 3 figures. arXiv admin note: substantial text overlap with arXiv:2302.13734

Journal ref: APL Mater. 11, 091113 (2023)

Gate-control of superconducting current: mechanisms, parameters and technological potential

Authors: Leon Ruf, Claudio Puglia, Tosson Elalaily, Giorgio De Simoni, Francois Joint, Martin Berke, Jennifer Koch, Andrea Iorio, Sara Khorshidian, Peter Makk, Simone Gasparinetti, Szabolcs Csonka, Wolfgang Belzig, Mario Cuoco, Francesco Giazotto, Elke Scheer, Angelo Di Bernardo

Abstract: In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superco… ▽ More In conventional metal-oxide semiconductor (CMOS) electronics, the logic state of a device is set by a gate voltage (VG). The superconducting equivalent of such effect had remained unknown until it was recently shown that a VG can tune the superconducting current (supercurrent) flowing through a nanoconstriction in a superconductor. This gate-controlled supercurrent (GCS) effect can lead to superconducting logics like CMOS logics, but with lower energy dissipation. The physical mechanism underlying the GCS effect, however, remains under debate. In this review article, we illustrate the main mechanisms proposed for the GCS effect, and the material and device parameters that mostly affect it based on the evidence reported. We will come to the conclusion that different mechanisms are at play in the different studies reported so far. We then outline studies that can help answer open questions on the effect and achieve control over it, which is key for applications. We finally give insights into the impact that the GCS effect can have towards high-performance computing with low-energy dissipation and quantum technologies. △ Less

Submitted 28 February, 2024; v1 submitted 27 February, 2023; originally announced February 2023.

Comments: 23 pages, 5 figures, 2 tables

Signatures of gate-driven out of equilibrium superconductivity in Ta/InAs nanowires

Authors: Tosson Elalaily, Martin Berke, Máté Kedves, Gergő Fülöp, Zoltán Scherübl, Thomas Kanne, Jesper Nygård, Péter Makk, Szabolcs Csonka

Abstract: Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nano… ▽ More Understanding the microscopic origin of the gate-controlled supercurrent (GCS) in superconducting nanobridges is crucial for engineering superconducting switches suitable for a variety of electronic applications. The origin of GCS is controversial, and various mechanisms have been proposed to explain it. In this work, we have investigated the GCS in a Ta layer deposited on the surface of InAs nanowires. Comparison between switching current distributions at opposite gate polarities and between the gate dependence of two opposite side gates with different nanowire$-$gate spacings shows that the GCS is determined by the power dissipated by the gate leakage. We also found a substantial difference between the influence of the gate and elevated bath temperature on the magnetic field dependence of the supercurrent. Detailed analysis of the switching dynamics at high gate voltages shows that the device is driven into the multiple phase slips regime by high-energy fluctuations arising from the leakage current. △ Less

Submitted 30 October, 2022; originally announced October 2022.

Gate-controlled supercurrent in epitaxial Al/InAs nanowires

Authors: Tosson Elalaily, Olivér Kürtössy, Zoltán Scherübl, Martin Berke, Gergő Fülöp, István Endre Lukács, Thomas Kanne, Jesper Nygård, Kenji Watanabe, Takashi Taniguchi, Péter Makk, Szabolcs Csonka

Abstract: Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superco… ▽ More Gate-controlled supercurrent (GCS) in superconductor nanobridges has recently attracted attention as a means to create superconducting field effect transistors. Despite the clear advantage for applications with low power consumption and high switching speeds, the microscopic mechanism of the field effect is still under debate. In this work, we realize GCS for the first time in an epitaxial superconductor, which is created as a shell on an InAs nanowire. We show that the supercurrent in the epitaxial Al layer can be switched to the normal state by applying $\simeq\pm$ 23$\,$V on a bottom gate insulated from the nanowire by a crystalline hBN layer. Our extensive study on the temperature and magnetic field dependencies of GCS suggests that hot electron injection alone cannot explain our experimental findings. △ Less

Submitted 21 June, 2021; v1 submitted 11 June, 2021; originally announced June 2021.

Probing proximity induced superconductivity in InAs nanowire using built-in barriers

Authors: Tosson Elalaily, Olivér Kürtössy, Valentina Zannier, Zoltán Scherübl, István Endre Lukács, Pawan Srivastava, Francesca Rossi, Lucia Sorba, Szabolcs Csonka, Péter Makk

Abstract: Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we us… ▽ More Bound states in superconductor-nanowire hybrid devices play a central role, carrying informationon the ground states properties (Shiba or Andreev states) or on the topological properties of thesystem (Majorana states). The spectroscopy of such bound states relies on the formation of well-defined tunnel barriers, usually defined by gate electrodes, which results in smooth tunnel barriers.Here we used thin InP segments embedded into InAs nanowire during the growth process to forma sharp built-in tunnel barrier. Gate dependence and thermal activation measurements have beenused to confirm the presence and estimate the height of this barrier. By coupling these wires tosuperconducting electrodes we have investigated the gate voltage dependence of the induced gap inthe nanowire segment, which we could understand using a simple model based on Andreev boundstates. Our results show that these built-in barriers are promising as future spectroscopic tools △ Less

Submitted 25 January, 2020; originally announced January 2020.

Journal ref: Phys. Rev. Applied 14, 044002 (2020)

Large spatial extension of the zero-energy Yu-Shiba-Rusinov state in magnetic field

Authors: Zoltán Scherübl, Gergő Fülöp, Cătălin Paşcu Moca, Jörg Gramich, Andreas Baumgartner, Péter Makk, Tosson Elalaily, Christian Schönenberger, Jesper Nygård, Gergely Zaránd, Szabolcs Csonka

Abstract: Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension o… ▽ More Various promising qubit concepts have been put forward recently based on engineered superconductor (SC) subgap states like Andreev bound states, Majorana zero modes or the Yu-Shiba-Rusinov (Shiba) states. The coupling of these subgap states via a SC strongly depends on their spatial extension and is an essential next step for future quantum technologies. Here we investigate the spatial extension of a Shiba state in a semiconductor quantum dot coupled to a SC for the first time. With detailed transport measurements and numerical renormalization group calculations we find a remarkable more than 50 nm extension of the zero energy Shiba state, much larger than the one observed in very recent scanning tunneling microscopy (STM) measurements. Moreover, we demonstrate that its spatial extension increases substantially in magnetic field. △ Less

Submitted 13 January, 2020; v1 submitted 20 June, 2019; originally announced June 2019.

Comments: 11 pages, 7 figures

Journal ref: Nature Communications 11, 1834 (2020)