Role of Element-Specific Dam** on the Ultrafast, Helicity-Independent All-Optical Switching Dynamics in Amorphous (Gd,Tb)Co Thin Films
Authors:
Alejandro Ceballos,
Akshay Pattabi,
Amal El-Ghazaly,
Sergiu Ruta,
Christian P. Simon,
Richard F. L. Evans,
Thomas Ostler,
Roy W. Chantrell,
Ellis Kennedy,
Mary Scott,
Jeffrey Bokor,
Frances Hellman
Abstract:
Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) system…
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Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching (HI-AOS) of the magnetization has thus far only been observed in Gd-based, ferrimagnetic amorphous (\textit{a}-) rare earth-transition metal (\textit{a}-RE-TM) systems, and a comprehensive understanding of the reversal mechanism remains elusive. Here, we report HI-AOS in ferrimagnetic \textit{a}-Gd$_{22-x}$Tb$_x$Co$_{78}$ thin films, from x = 0 to x = 18, and elucidate the role of Gd in HI-AOS in \textit{a}-RE-TM alloys and multilayers. Increasing Tb content results in increasing perpendicular magnetic anisotropy and coercivity, without modifying magnetization density, and slower remagnetization rates and higher critical fluences for switching but still shows picosecond HI-AOS. Simulations of the atomistic spin dynamics based on the two-temperature model reproduce these results qualitatively and predict that the lower dam** on the RE sublattice arising from the small spin-orbit coupling of Gd (with $L = 0$) is instrumental for the faster dynamics and lower critical fluences of the Gd-rich alloys. Annealing \textit{a}-Gd$_{10}$Tb$_{12}$Co$_{78}$ leads to slower dynamics which we argue is due to an increase in dam**. These simulations strongly indicate that acounting for element-specific dam** is crucial in understanding HI-AOS phenomena. The results suggest that engineering the element specific dam** of materials can open up new classes of materials that exhibit low-energy, ultrafast HI-AOS.
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Submitted 15 May, 2020; v1 submitted 21 November, 2019;
originally announced November 2019.
GHz-Band Integrated Magnetic Inductors
Authors:
Amal El-Ghazaly,
Robert M. White,
Shan X. Wang
Abstract:
The demand on mobile electronics to continue to shrink in size while increase in efficiency drives the demand on the internal passive components to do the same. Power amplifiers require inductors with small form factors, high quality factors, and high operating frequency in the single-digit GHz range. This work explores the use of magnetic materials to satisfy the needs of power amplifier inductor…
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The demand on mobile electronics to continue to shrink in size while increase in efficiency drives the demand on the internal passive components to do the same. Power amplifiers require inductors with small form factors, high quality factors, and high operating frequency in the single-digit GHz range. This work explores the use of magnetic materials to satisfy the needs of power amplifier inductor applications. This paper discusses the optimization choices regarding material selection, device design, and fabrication methodology. The inductors achieved here present the best performance to date for an integrated magnetic core inductor at high frequencies with a 1 nH inductance and peak quality factor of 4 at ~3 GHz. Such compact inductors show potential for efficiently meeting the need of mobile electronics in the future.
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Submitted 9 February, 2017;
originally announced February 2017.
