Showing 1–42 of 42 results for author: Eklund, P

Eliminating the spin-down critical angle in polarizing neutron optics for expanding the polarization bandwidth

Authors: A. Zubayer, N. Ghafoor, A. Glavic, J. Stahn, M. Lorentzon, A. Le Febvrier, P. Eklund, J. Birch, F. Eriksson

Abstract: Polarized neutron scattering is a very important analysis technique for studies of magnetism, spintronics, and high-sensitivity measurements, among others, offering invaluable information. Yet, the efficiency of such experiments rely on the performance of the polarizing neutron optics to provide high reflectivity and polarization. Presently, state-of-the-art polarizers like Fe/Si supermirrors are… ▽ More Polarized neutron scattering is a very important analysis technique for studies of magnetism, spintronics, and high-sensitivity measurements, among others, offering invaluable information. Yet, the efficiency of such experiments rely on the performance of the polarizing neutron optics to provide high reflectivity and polarization. Presently, state-of-the-art polarizers like Fe/Si supermirrors are not able to polarize neutrons at low scattering angles in a monochromatic beam or able to polarize neutrons with a variety of wavelengths as for a non-monochromatic beam. To overcome this limitation, it is suggested to use Co/Ti multilayers on Ti substrates owing to their favorable scattering length density characteristics. It is shown that this approach enables a wavelength bandwidth several times larger than achievable with state-of-the-art materials on Si or glass substrates. Consequently, enabling the possibility of polarizing neutrons across an extended wavelength range, including those with very high wavelengths. △ Less

Submitted 7 April, 2024; originally announced April 2024.

Electronic structure and thermoelectric properties of epitaxial Sc1-xVxNy thin films grown on MgO(001)

Authors: Susmita Chowdhury, Niraj Kumar Singh, Sanath Kumar Honnali, Grzegorz Greczynski, Per Eklund, Arnaud le Febvrier, Martin Magnuson

Abstract: The electronic structure of Sc1-xVxNy epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on Sc0.75V0.25N indicate that V 3d states lie in the band gap of the parent ScN compound in the vicinity of the Fermi level. Thus, theoretically the presence of light (dispersive) bands at the Γ-point wi… ▽ More The electronic structure of Sc1-xVxNy epitaxial films with different alloying concentrations of V are investigated with respect to effects on thermoelectric properties. Band structure calculations on Sc0.75V0.25N indicate that V 3d states lie in the band gap of the parent ScN compound in the vicinity of the Fermi level. Thus, theoretically the presence of light (dispersive) bands at the Γ-point with band multiplicity is expected to lead to lower electrical resistivity while flat (heavy) bands at X-W-K symmetry points are associated with higher Seebeck coefficient than that of ScN. With this aim, epitaxial Sc1-xVxNy thin film samples were deposited on MgO(001) substrates. All the samples showed N substoichiometry and pseudocubic crystal structure. The N-vacancy-induced states were visible in the Sc 2p XAS spectra. The reference ScN and Sc1-xVxNy samples up to x = 0.12 were n type, exhibiting carrier concentration of 1021 cm-3, typical for degenerate semiconductors. For the highest V alloying of x = 0.15, holes became the majority charge carrier as indicated by the positive Seebeck coefficient. The underlying electronic structure and bonding mechanism in Sc1-xVxNy influence the electrical resistivity, Seebeck coefficient, and Hall effect. Thus, the work contributes to the fundamental understanding of the correlated defects and thermoelectric properties to the electronic structure in Sc-N system with V alloying. △ Less

Submitted 1 April, 2024; originally announced April 2024.

Comments: 29 pages, 8 figures, 4 tables

Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films

Authors: Niraj Kumar Singh, Victor Hjort, Sanath Kumar Honnali, Davide Gambino, Arnaud le Febvrier, Ganpati Ramanath, Björn Alling, Per Eklund

Abstract: CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient… ▽ More CrN-based alloy thin films are of interest as thermoelectric materials for energy harvesting. Ab initio calculations show that dilute alloying of CrN with 3 at.% W substituting Cr, induce flat electronic bands and push the Fermi level EF into the conduction band, while retaining dispersive Cr 3d bands. These features are conducive for both high electrical conductivity σand high Seebeck coefficient α, and hence the thermoelectric power factor α^2σ. To investigate this possibility, epitaxial CrWxNz films were grown on c-plane sapphire by dc-magnetron sputtering. However, even films with the lowest W concentration (x = 0.03) in our study contained metallic h-Cr2N, which is not conducive for a high α. Nevertheless, the films exhibit a sizeable power factor of α^2σ~ 4.7 x 10-4 Wm-1K-2 due to high σ~ 700 Scm-1, and a moderate α~ -25 ~{^^^^00b5}V/K. Increasing h-Cr2N fractions in the 0.03 < x \le 0.19 range monotonically increases σ, but severely diminishes αleading to two orders of magnitude decrease in α^2σ. This trend continues with x > 0.19 due to W precipitation. These findings indicate that dilute W additions below its solubility limit in CrN is important for realizing high thermoelectric power factor in CrWxNz alloy films. △ Less

Submitted 25 June, 2024; v1 submitted 4 November, 2023; originally announced November 2023.

Thermoelectric properties and electronic structure of Cr(Mo,V)Nx thin films studied by synchrotron and lab-based X-ray spectroscopy

Authors: Susmita Chowdhury, Victor Hjort, Rui Shu, Grzegorz Greczynski, Arnaud le Febvrier, Per Eklund, Martin Magnuson

Abstract: Chromium-based nitrides are used in hard, resilient coatings, and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigated the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. Due to minuscule N… ▽ More Chromium-based nitrides are used in hard, resilient coatings, and show promise for thermoelectric applications due to their combination of structural, thermal, and electronic properties. Here, we investigated the electronic structures and chemical bonding correlated to the thermoelectric properties of epitaxially grown chromium-based multicomponent nitride Cr(Mo,V)Nx thin films. Due to minuscule N vacancies, finite population of Cr 3d and N 2p states appear at the Fermi level and diminishes the band opening for Cr0.51N0.49. Incorporating holes by alloying V in N deficient CrN matrix results in enhanced thermoelectric power factor with marginal change in the charge transfer of Cr to N compared to Cr0.51N0.49. Further alloying Mo isoelectronic to Cr increases the density of states across the Fermi level due to hybridization of the (Cr, V) 3d and Mo 4d-N 2p states in Cr(Mo,V)Nx. The hybridization effect with reduced N 2p states off from stoichiometry drives the system towards metal like electrical resistivity and reduction in Seebeck coefficient compensating the overall power factor still comparable to Cr0.51N0.49. The N deficiency also depicts a critical role in reduction of the charge transfer from metal to N site. The present work envisages ways for enhancing thermoelectric properties through electronic band engineering by alloying and competing effects of N vacancies. △ Less

Submitted 24 August, 2023; v1 submitted 21 August, 2023; originally announced August 2023.

Comments: 28 pages, 11 figures, 2 tables

Reflective, polarizing, and magnetically soft amorphous Fe/Si multilayer neutron optics with isotope-enriched 11B4C inducing atomically flat interfaces

Authors: A. Zubayer, N. Ghafoor, K. A. Thórarinsdóttir, S. Stendahl, A. Glavic, J. Stahn, G. Nagy, G. Greczynski, M. Schwartzkopf, A. Le Febvrier, P. Eklund, J. Birch, F. Magnus, F. Eriksson

Abstract: The utilization of polarized neutrons is of great importance in scientific disciplines spanning materials science, physics, biology, and chemistry. Polarization analysis offers insights into otherwise unattainable sample information such as magnetic domains and structures, protein crystallography, composition, orientation, ion-diffusion mechanisms, and relative location of molecules in multicompon… ▽ More The utilization of polarized neutrons is of great importance in scientific disciplines spanning materials science, physics, biology, and chemistry. Polarization analysis offers insights into otherwise unattainable sample information such as magnetic domains and structures, protein crystallography, composition, orientation, ion-diffusion mechanisms, and relative location of molecules in multicomponent biological systems. State-of-the-art multilayer polarizing neutron optics have limitations, particularly low specular reflectivity and polarization at higher scattering vectors/angles, and the requirement of high external magnetic fields to saturate the polarizer magnetization. Here, we show that by incorporating 11B4C into Fe/Si multilayers, amorphization and smooth interfaces can be achieved, yielding higher neutron reflectivity, less diffuse scattering and higher polarization. Magnetic coercivity is eliminated, and magnetic saturation can be reached at low external fields (>2 mT). This approach offers prospects for significant improvement in polarizing neutron optics, enabling; nonintrusive positioning of the polarizer, enhanced flux, increased data accuracy, and further polarizing/analyzing methods at neutron scattering facilities. △ Less

Submitted 15 August, 2023; originally announced August 2023.

Effects of deposition temperature on the mechanical and structural properties of amorphous Al-Si-O thin films prepared by RF magnetron sputtering

Authors: Stefan Karlsson, Per Eklund, Lars Österlund, Jens Birch, Sharafat Ali

Abstract: Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al… ▽ More Aluminosilicate (Al-Si-O) thin films containing up to 31 at. % Al and 23 at. % Si were prepared by reactive RF magnetron co-sputtering. Mechanical and structural properties were measured by indentation and specular reflectance infrared spectroscopy at varying Si sputtering target power and substrate temperature in the range 100 to 500 °C. It was found that an increased substrate temperature and Al/Si ratio give denser structure and consequently higher hardness (7.4 to 9.5 GPa) and reduced elastic modulus (85 to 93 GPa) while at the same time lower crack resistance (2.6 to 0.9 N). The intensity of the infrared Si-O-Si/Al asymmetric stretching vibrations shows a linear dependence with respect to Al concentration. The Al-O-Al vibrational band (at 1050 cm-1) shifts towards higher wavenumbers with increasing Al concentration which indicates a decrease of the bond length, evidencing denser structure and higher residual stress, which is supported by the increased hardness. The same Al-O-Al vibrational band (at 1050 cm-1) shifts towards lower wavenumber with increasing substrate temperature indicating an increase in the of the average coordination number of Al. △ Less

Submitted 28 June, 2023; originally announced June 2023.

Comments: Preprint

PIE-QG: Paraphrased Information Extraction for Unsupervised Question Generation from Small Corpora

Authors: Dinesh Nagumothu, Bahadorreza Ofoghi, Guangyan Huang, Peter W. Eklund

Abstract: Supervised Question Answering systems (QA systems) rely on domain-specific human-labeled data for training. Unsupervised QA systems generate their own question-answer training pairs, typically using secondary knowledge sources to achieve this outcome. Our approach (called PIE-QG) uses Open Information Extraction (OpenIE) to generate synthetic training questions from paraphrased passages and uses t… ▽ More Supervised Question Answering systems (QA systems) rely on domain-specific human-labeled data for training. Unsupervised QA systems generate their own question-answer training pairs, typically using secondary knowledge sources to achieve this outcome. Our approach (called PIE-QG) uses Open Information Extraction (OpenIE) to generate synthetic training questions from paraphrased passages and uses the question-answer pairs as training data for a language model for a state-of-the-art QA system based on BERT. Triples in the form of <subject, predicate, object> are extracted from each passage, and questions are formed with subjects (or objects) and predicates while objects (or subjects) are considered as answers. Experimenting on five extractive QA datasets demonstrates that our technique achieves on-par performance with existing state-of-the-art QA systems with the benefit of being trained on an order of magnitude fewer documents and without any recourse to external reference data sources. △ Less

Submitted 3 January, 2023; originally announced January 2023.

Comments: 10 pages, 3 figures, Published to Conference on Computational Natural Language Learning

Journal ref: In Proceedings of the 26th Conference on Computational Natural Language Learning, CoNLL, Dec 2022,Abu Dhabi, United Arab Emirates. Association for Computational Linguistics

Phase formation in CrFeCoNi nitride thin films

Authors: Smita G. Rao, Boburjon Mukhamedov, Gyula Nagy, Eric N. Tseng, Rui Shu, Robert Boyd, Daniel Primetzhofer, Per O. Å. Persson, Björn Alling, Igor A. Abrikosov, Arnaud le Febvrier, Per Eklund

Abstract: As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher tem… ▽ More As a single-phase alloy, CrFeCoNi is a face centered cubic (fcc) material related to the archetypical high-entropy Cantor alloy CrFeCoNiMn. For thin films, CrFeCoNi of approximately equimolar composition tends to assume an fcc structure when grown at room temperature by magnetron sputtering. However, the single-phase solid solution state is typically not achieved for thin films grown at higher temperatures. The same holds true for Cantor alloy-based ceramics (nitrides and oxides), where phase formation is extremely sensitive to process parameters such as the amount of reactive gas. This study combines theoretical and experimental methods to understand the phase formation in nitrogen-containing CrFeCoNi thin films. Density functional theory calculations considering three competing phases (CrN, Fe-Ni and Co) show that the free energy of mixing, delta G of (CrFeCoNi)1-xNx solid solutions has a maximum at x = 0.20-0.25, and delta G becomes lower when x less than 0.20, greater than 0.25. Thin films of (CrFeCoNi)1-xNx (x = 0.14-0.41) grown by magnetron sputtering show stabilization of the metallic fcc when x lesser than or equal to 0.22 and the stabilization of the NaCl B1 structure when x is greater than 0.33, consistent with the theoretical prediction. In contrast, films with intermediate amounts of nitrogen (x = 0.22) grown at higher temperatures show segregation into multiple phases of CrN, Fe-Ni-rich and Co. These results offer an explanation for the requirement of kinetically limited growth conditions at low temperature for obtaining single-phase CrFeCoNi Cantor-like nitrogen-containing thin films and are of importance for understanding the phase-formation mechanisms in multicomponent ceramics. △ Less

Submitted 10 November, 2022; originally announced November 2022.

Single photon detection performance of highly disordered NbTiN thin films

Authors: Ruoyan Ma, Rui Shu, Xingyu Zhang, Aobo Yu, Huang Jia, You Xiao, Huiqin Yu, Xiaoyu Liu, Hao Li, Per Eklund, Xiaofu Zhang, Lixing You

Abstract: We experimentally investigated the detection performance of highly disordered NbxTi1-xN based superconducting nanowire single photon detectors (SNSPDs). The dependence on the composition of the transition temperature Tc for NbxTi1-xN films show a dome-like behavior on the Nb content, with a maximal Tc at xNb~0.65 , and the Nb0.65Ti0.35N films also combine relatively large sheet resistance and inte… ▽ More We experimentally investigated the detection performance of highly disordered NbxTi1-xN based superconducting nanowire single photon detectors (SNSPDs). The dependence on the composition of the transition temperature Tc for NbxTi1-xN films show a dome-like behavior on the Nb content, with a maximal Tc at xNb~0.65 , and the Nb0.65Ti0.35N films also combine relatively large sheet resistance and intermediate residual resistivity ratio. Moreover, 60-nm-wide and 7-nm-thick Nb0.65Ti0.35N nanowires show a switching current as high as 14.5 uA, and saturated intrinsic detection efficiency with a plateau of more than 2 uA at 2.4 K. Finally, the corresponding SNSPDs on an alternative SiO2/Ta2O5 dielectric mirror showed a system detection efficiency of approximately 92% for 1550 nm photons, and the timing jitter is around 26 ps. Our results demonstrate that the highly disordered NbxTi1-xN films are promising for fabricating SNSPDs for near- and middle-infrared single photons with high detection efficiency and low timing jitter. △ Less

Submitted 27 October, 2022; originally announced October 2022.

Comments: 9 pages,5 figures

An Efficient and Reliable Asynchronous Federated Learning Scheme for Smart Public Transportation

Authors: Chenhao Xu, Youyang Qu, Tom H. Luan, Peter W. Eklund, Yong Xiang, Longxiang Gao

Abstract: Since the traffic conditions change over time, machine learning models that predict traffic flows must be updated continuously and efficiently in smart public transportation. Federated learning (FL) is a distributed machine learning scheme that allows buses to receive model updates without waiting for model training on the cloud. However, FL is vulnerable to poisoning or DDoS attacks since buses t… ▽ More Since the traffic conditions change over time, machine learning models that predict traffic flows must be updated continuously and efficiently in smart public transportation. Federated learning (FL) is a distributed machine learning scheme that allows buses to receive model updates without waiting for model training on the cloud. However, FL is vulnerable to poisoning or DDoS attacks since buses travel in public. Some work introduces blockchain to improve reliability, but the additional latency from the consensus process reduces the efficiency of FL. Asynchronous Federated Learning (AFL) is a scheme that reduces the latency of aggregation to improve efficiency, but the learning performance is unstable due to unreasonably weighted local models. To address the above challenges, this paper offers a blockchain-based asynchronous federated learning scheme with a dynamic scaling factor (DBAFL). Specifically, the novel committee-based consensus algorithm for blockchain improves reliability at the lowest possible cost of time. Meanwhile, the devised dynamic scaling factor allows AFL to assign reasonable weights to stale local models. Extensive experiments conducted on heterogeneous devices validate outperformed learning performance, efficiency, and reliability of DBAFL. △ Less

Submitted 26 December, 2022; v1 submitted 15 August, 2022; originally announced August 2022.

Chemical-scissor-mediated structural editing of layered transition metal carbides

Authors: Haoming Ding, Youbing Li, Mian Li, Ke Chen, Kun Liang, Guoxin Chen, Jun Lu, Justinas Palisaitis, Per O. A. Persson, Per Eklund, Lars Hultman, Shiyu Du, Zhifang Chai, Yury Gogotsi, Qing Huang

Abstract: Intercalation of non-van der Waals (vdW) layered materials can produce new 2D and 3D materials with unique properties, but it is difficult to achieve. Here, we describe a structural editing protocol for 3D non-vdW layered ternary carbides and nitrides (MAX phases) and their 2D vdW derivatives (MXenes). Gap-opening and species-intercalating stages were mediated by chemical scissors and guest interc… ▽ More Intercalation of non-van der Waals (vdW) layered materials can produce new 2D and 3D materials with unique properties, but it is difficult to achieve. Here, we describe a structural editing protocol for 3D non-vdW layered ternary carbides and nitrides (MAX phases) and their 2D vdW derivatives (MXenes). Gap-opening and species-intercalating stages were mediated by chemical scissors and guest intercalants, creating a large family of layered materials with unconventional elements and structures in MAX phases, as well as MXenes with versatile termination species. Removal of surface terminations by metal scissors and stitching of carbide layers by metal atoms leads to a reverse transformation from MXenes to MAX phases, and metal-intercalated 2D carbides. This scissor-mediated structural editing may enable structural and chemical tailoring of other layered ceramics. △ Less

Submitted 28 July, 2022; originally announced July 2022.

Influence of generated defects by Ar-implantation on the thermoelectric properties of ScN

Authors: R. Burcea, J. -F. Barbot, P. -O. Renault, D. Eyidi, T. Girardeau, M. Marteau, F. Giovannelli, A. Zenji, J-M. Rampnoux, S. Dilhaire, P. Eklund, A. Le Febvrier

Abstract: Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric ch… ▽ More Nowadays, making thermoelectric materials more efficient in energy conversion is still a challenge. In this work, to reduce the thermal conductivity and thus improve the overall thermoelectric performances, point and extended defects were generated in epitaxial 111-ScN thin films by implantation using argon ions. The films were investigated by structural, optical, electrical, and thermoelectric characterization methods. The results demonstrated that argon implantation leads to the formation of stable defects (up to 750 K operating temperature) were identified as interstitial type defect clusters and so-called argon-vacancy complexes. The insertion of those specific defects induces acceptor-type deep levels in the bandgap yielding to a reduce of the free carrier mobility. With a reduce electrical conductivity, the irradiated sample exhibited higher Seebeck coefficient maintaining the power factor of the film. The thermal conductivity is strongly reduced from 12 to 3 W.m-1.K-1 at 300 K, showing the effect of defects in increasing phonon scattering. Subsequent high temperature annealing, at 1573 K, leads to the progressive evolution of defects: the initial clusters of interstitial evolved to the benefit of smaller clusters and the formation of bubble. Thus, the number of free carriers, the resistivity and the Seebeck coefficient are almost restored but the mobility of the carriers remains low and a 30% drop in thermal conductivity is still effective (8.5 W.m-1.K-1). This study shows that the control defect engineering with defects introduced by irradiation using noble gases in a thermoelectric coating can be an attractive method to enhance the figure of merit of thermoelectric materials. △ Less

Submitted 10 August, 2022; v1 submitted 24 March, 2022; originally announced March 2022.

Comments: 7 figures

P-type behavior of CrN thin films by control of point defects

Authors: Arnaud le Febvrier, Davide Gambino, Fabien Giovannelli, Babak Bakhit, Simon Hurand, Gregory Abadias, Björn Alling, Per Eklund

Abstract: We report the results of a combined experimental and theoretical study on nonstoichiometric CrN1+d thin films grown by reactive magnetron sputtering on c-plane sapphire, MgO (100) and LaAlO3 (100) substrates in a Ar/N2 gas mixture using different percentage of N2. There is a transition from n-type to p-type behavior in the layers as a function of nitrogen concentration varying from 48 at. % to 52… ▽ More We report the results of a combined experimental and theoretical study on nonstoichiometric CrN1+d thin films grown by reactive magnetron sputtering on c-plane sapphire, MgO (100) and LaAlO3 (100) substrates in a Ar/N2 gas mixture using different percentage of N2. There is a transition from n-type to p-type behavior in the layers as a function of nitrogen concentration varying from 48 at. % to 52 at. % in CrN films. The compositional change follows a similar trend for all substrates, with a N/Cr ratio increasing from approximately 0.7 to 1.06-1.10 by increasing percentage of N2 in the gas flow ratio. As a result of the change in stoichiometry, the lattice parameter and the Seebeck coefficient increase together with the increase of N in CrN1+d; in particular, the Seebeck value coefficient transitions from -50 uV.K-1 for CrN0.97 to +75 uV.K-1 for CrN1.1. Density functional theory calculations show that Cr vacancies can account for the change in Seebeck coefficient, since they push the Fermi level down in the valence band, whereas N interstitial defects in the form of N2 dumbbells are needed to explain the increasing lattice parameter. Calculations including both types of defects, which have a strong tendency to bind together, reveal a slight increase in the lattice parameter and a simultaneous formation of holes in the valence band. To explain the experimental trends, we argue that both Cr vacancies and N2 dumbbells, possibly in combined configurations, are present in the films. We demonstrate the possibility of controlling the semiconducting behavior of CrN with intrinsic defects from n- to p-type, opening possibilities to integrate this compound in energy-harvesting thermoelectric devices. △ Less

Submitted 21 February, 2022; v1 submitted 15 November, 2021; originally announced November 2021.

Comments: 21 pages, 7 figures, supplementary information

Electron-Phonon Coupling and Quantum Correction to Topological Magnetoconductivity in Bi2GeTe4

Authors: Niraj Kumar Singh, Divya Rawat, Dibyendu Dey, Anna Elsukova, Per O. Å. Persson, Per Eklund, A. Taraphder, Ajay Soni

Abstract: We report on structure, vibrational properties and weak-antilocalization-(WAL-) induced quantum correction to magnetoconductivity in single crystal Bi2GeTe4. Surface band structure calculations show a single Dirac cone corresponding to topological surface states in Bi2GeTe4. An estimated phase coherence length, l_φ ~ 143 nm and prefactor α ~ - 1.54 from Hikami-Larkin-Nagaoka fitting of magnetocond… ▽ More We report on structure, vibrational properties and weak-antilocalization-(WAL-) induced quantum correction to magnetoconductivity in single crystal Bi2GeTe4. Surface band structure calculations show a single Dirac cone corresponding to topological surface states in Bi2GeTe4. An estimated phase coherence length, l_φ ~ 143 nm and prefactor α ~ - 1.54 from Hikami-Larkin-Nagaoka fitting of magnetoconductivity describe the quantum correction to conductivity. An anomalous temperature dependence of A1g Raman modes confirms enhanced electron-phonon interactions. Our results establish the involvement of vibrations of Bi-Te with existence of topological surface states and WAL in Bi2GeTe4. △ Less

Submitted 13 October, 2021; originally announced October 2021.

Report number: 045134

Journal ref: Phys. Rev. B,105, 045134 (2022)

Early stages of dissolution corrosion in 316L and DIN 1.4970 austenitic stainless steels with and without anticorrosion coatings in static liquid lead-bismuth eutectic (LBE) at 500$^\circ$C

Authors: Evangelia Charalampopoulou, Konstantina Lambrinou, Tom Van der Donck, Boris Paladino, Fabio Di Fonzo, Clio Azina, Per Eklund, Stanislav Mráz, Jochen M. Schneider, Dominique Schryvers, Rémi Delville

Abstract: This work addresses the early stages ($\le$1000 h) of the dissolution corrosion behavior of 316L and DIN 1.4970 austenitic stainless steels in contact with oxygen-poor (C$_O$ < 10$^-$$^8$ mass%), static liquid lead-bismuth eutectic (LBE) at 500°C for 600-1000 h. The objective of this study was to determine the relative early-stage resistance of the uncoated steels to dissolution corrosion and to a… ▽ More This work addresses the early stages ($\le$1000 h) of the dissolution corrosion behavior of 316L and DIN 1.4970 austenitic stainless steels in contact with oxygen-poor (C$_O$ < 10$^-$$^8$ mass%), static liquid lead-bismuth eutectic (LBE) at 500°C for 600-1000 h. The objective of this study was to determine the relative early-stage resistance of the uncoated steels to dissolution corrosion and to assess the protectiveness of select candidate coatings (Cr$_2$AlC, Al$_2$O$_3$, V$_2$Al$_x$C$_y$). The simultaneous exposure of steels with intended differences in microstructure and thermomechanical state showed the effects of steel grain size, density of annealing/deformation twins, and secondary precipitates on the steel dissolution corrosion behavior. The findings of this study provide recommendations on steel manufacturing with the aim of using the steels to construct Gen-IV lead-cooled fast reactors. △ Less

Submitted 13 July, 2021; originally announced August 2021.

Comments: 52 pages, 22 figures, 4 tables

Journal ref: Materials Characterization, Volume 178, 2021, 111234

Solid-state Janus nanoprecipitation enables amorphous-like heat conduction in crystalline Mg3Sb2-based thermoelectric materials

Authors: Rui Shu, Zhijia Han, Anna Elsukova, Yongbin Zhu, Peng Qin, Feng Jiang, Jun Lu, Per O. Å. Persson, Justinas Palisaitis, Arnaud le Febvrier, Wenqing Zhang, Oana Cojocaru-Mirédin, Yuan Yu, Per Eklund, Weishu Liu

Abstract: Solid-state precipitation can be used to tailor materials properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, we uncover unconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed by side-by-side Bi-… ▽ More Solid-state precipitation can be used to tailor materials properties, ranging from ferromagnets and catalysts to mechanical strengthening and energy storage. Thermoelectric properties can be modified by precipitation to enhance phonon scattering while retaining charge-carrier transmission. Here, we uncover unconventional dual Janus-type nanoprecipitates in Mg3Sb1.5Bi0.5 formed by side-by-side Bi- and Ge-rich appendages, in contrast to separate nanoprecipitate formation. These Janus nanoprecipitates result from local co-melting of Bi and Ge during sintering, enabling an amorphous-like lattice thermal conductivity. A precipitate size effect on phonon scattering is observed due to the balance between alloy-disorder and nanoprecipitate scattering. The thermoelectric figure-of-merit ZT reaches 0.6 near room temperature and 1.6 at 773 K. The Janus nanoprecipitation can be introduced into other materials and may act as a general property-tailoring mechanism. △ Less

Submitted 30 June, 2022; v1 submitted 20 July, 2021; originally announced July 2021.

Journal ref: Advanced Science 2202594 (2022)

Near-Room-Temperature Ferromagnetic Behavior of Single-Atom-Thick 2D Iron in Nanolaminated Ternary MAX Phases

Authors: Youbing Li, **ghua Liang, Haoming Ding, Jun Lu, Xulin Mu, Pengfei Yan, Xiao Zhang, Ke Chen, Mian Li, Per O. A. Persson, Lars Hultman, Per Eklund, Shiyu Du, Hongxin Yang, Zhifang Chai, Qing Huang

Abstract: Two dimensional (2D) ferromagnetic materials have attracted much attention in the fields of condensed matter physics and materials science, but their synthesis is still a challenge given their limitations on structural stability and susceptibility to oxidization. MAX phases nanolaminated ternary carbides or nitrides possess a unique crystal structure in which single-atom-thick A sublayers are inte… ▽ More Two dimensional (2D) ferromagnetic materials have attracted much attention in the fields of condensed matter physics and materials science, but their synthesis is still a challenge given their limitations on structural stability and susceptibility to oxidization. MAX phases nanolaminated ternary carbides or nitrides possess a unique crystal structure in which single-atom-thick A sublayers are interleaved by two dimensional MX slabs, providing nanostructured templates for designing 2D ferromagnetic materials if the non-magnetic A sublayers can be substituted replaced by magnetic elements. Here, we report three new ternary magnetic MAX phases (Ta2FeC, Ti2FeN and Nb2FeC) with A sublayers of single-atom-thick 2D iron through an isomorphous replacement reaction of MAX precursors (Ta2AlC, Ti2AlN and Nb2AlC) with a Lewis acid salts (FeCl2). All these MAX phases exhibit ferromagnetic (FM) behavior. The Curie temperature (Tc) of Ta2FeC and Nb2FeC MAX phase are 281 K and 291 K, respectively, i.e. close to room temperature. The saturation magnetization of these ternary magnetic MAX phases is almost two orders of magnitude higher than that of V2(Sn,Fe)C MAX phase whose A-site is partial substituted by Fe. Theoretical calculations on magnetic orderings of spin moments of Fe atoms in these nanolaminated magnetic MAX phases reveal that the magnetism can be mainly ascribed to intralayer exchange interaction of the 2D Fe atomic layers. Owning to the richness in composition of MAX phases, there is a large compositional space for constructing functional single-atom-thick 2D layers in materials using these nanolaminated templates. △ Less

Submitted 13 May, 2021; originally announced May 2021.

Characterization and identification of Au pathfinder minerals from an artisanal mine site using X-ray diffraction

Authors: Gabriel Nzulu, Per Eklund, Martin Magnuson

Abstract: Gold-associated pathfinder minerals have been investigated by identifying host minerals of Au for samples collected from an artisanal mining site near a potential gold mine (Kubi Gold Project) in Dunkwa-On-Offin in the central region of Ghana. We find that for each composition of Au powder (impure) and the residual black hematite/magnetite sand that remains after gold panning, there is a unique se… ▽ More Gold-associated pathfinder minerals have been investigated by identifying host minerals of Au for samples collected from an artisanal mining site near a potential gold mine (Kubi Gold Project) in Dunkwa-On-Offin in the central region of Ghana. We find that for each composition of Au powder (impure) and the residual black hematite/magnetite sand that remains after gold panning, there is a unique set of associated diverse indicator minerals. These indicator minerals are identified as SiO2 (quartz), Fe3O4 (magnetite), and Fe2O3 (hematite), while contributions from pyrite, arsenopyrites, iridosmine, scheelite, tetradymite, garnet, gypsum, and other sulfate materials are insignificant. This constitutes a confirmative identification of Au pathfinding minerals in this particular mineralogical area. The findings suggest that X-ray diffraction could also be applied in other mineralogical sites to aid in identifying indicator minerals of Au and the location of ore bodies at reduced environmental and exploration costs. △ Less

Submitted 7 February, 2021; originally announced February 2021.

Comments: 16 pages, 6 figures, 3 tables

Journal ref: Journal of Materials Science, 56(12), 7659-7669 (2021)

An upgraded ultra-high vacuum magnetron-sputtering system for high-versatility and software-controlled deposition

Authors: Arnaud le Febvrier, Ludvig Landalv, Thomas Liersch, David Sandmark, Per Sandstrom, Per Eklund

Abstract: Magnetron sputtering is a widely used physical vapor deposition technique. Reactive sputtering is used for the deposition of, e.g, oxides, nitrides and carbides. In fundamental research, versatility is essential when designing or upgrading a deposition chamber. Furthermore, automated deposition systems are the norm in industrial production, but relatively uncommon in laboratory-scale systems used… ▽ More Magnetron sputtering is a widely used physical vapor deposition technique. Reactive sputtering is used for the deposition of, e.g, oxides, nitrides and carbides. In fundamental research, versatility is essential when designing or upgrading a deposition chamber. Furthermore, automated deposition systems are the norm in industrial production, but relatively uncommon in laboratory-scale systems used primarily for fundamental research. Combining automatization and computerized control with the required versatility for fundamental research constitutes a challenge in designing, develo**, and upgrading laboratory deposition systems. The present article provides a detailed description of the design of a lab-scale deposition chamber for magnetron sputtering used for the deposition of metallic, oxide, nitride and oxynitride films with automated controls, dc or pulsed bias, and combined with a coil to enhance the plasma density near the substrate. LabVIEW software (provided as Supplementary Information) has been developed for a high degree of computerized or automated control of hardware and processes control and logging of process details. △ Less

Submitted 27 January, 2021; v1 submitted 16 October, 2020; originally announced October 2020.

Comments: 17 pages, 8 figures

Artificial Intelligence in the Battle against Coronavirus (COVID-19): A Survey and Future Research Directions

Authors: Thanh Thi Nguyen, Quoc Viet Hung Nguyen, Dung Tien Nguyen, Samuel Yang, Peter W. Eklund, Thien Huynh-The, Thanh Tam Nguyen, Quoc-Viet Pham, Imran Razzak, Edbert B. Hsu

Abstract: Artificial intelligence (AI) has been applied widely in our daily lives in a variety of ways with numerous success stories. AI has also contributed to dealing with the coronavirus disease (COVID-19) pandemic, which has been happening around the globe. This paper presents a survey of AI methods being used in various applications in the fight against the COVID-19 outbreak and outlines the crucial ro… ▽ More Artificial intelligence (AI) has been applied widely in our daily lives in a variety of ways with numerous success stories. AI has also contributed to dealing with the coronavirus disease (COVID-19) pandemic, which has been happening around the globe. This paper presents a survey of AI methods being used in various applications in the fight against the COVID-19 outbreak and outlines the crucial role of AI research in this unprecedented battle. We touch on areas where AI plays as an essential component, from medical image processing, data analytics, text mining and natural language processing, the Internet of Things, to computational biology and medicine. A summary of COVID-19 related data sources that are available for research purposes is also presented. Research directions on exploring the potential of AI and enhancing its capability and power in the pandemic battle are thoroughly discussed. We identify 13 groups of problems related to the COVID-19 pandemic and highlight promising AI methods and tools that can be used to address these problems. It is envisaged that this study will provide AI researchers and the wider community with an overview of the current status of AI applications, and motivate researchers to harness AI's potential in the fight against COVID-19. △ Less

Submitted 16 March, 2022; v1 submitted 30 July, 2020; originally announced August 2020.

Halogenated MXenes with Electrochemically Active Terminals for High Performance Zinc Ion Batteries

Authors: Mian Li, XinLiang Li, Guifang Qin, Kan Luo, Jun Lu, Youbing Li, Guo** Liang, Zhaodong Huang, Lars Hultman, Per Eklund, Per O. A. Persson, Shiyu Du, Zhifang Chai, Chunyi Zhi, Qing Huang

Abstract: The class of two-dimensional metal carbides and nitrides known as MXenes offer a distinct manner of property tailoring for a wide range of applications. The ability to tune the surface chemistry for expanding the property space of MXenes is thus an important topic, although experimental exploration of new surface terminals remains a challenge. Here, we synthesized Ti3C2 MXene with unitary, binary… ▽ More The class of two-dimensional metal carbides and nitrides known as MXenes offer a distinct manner of property tailoring for a wide range of applications. The ability to tune the surface chemistry for expanding the property space of MXenes is thus an important topic, although experimental exploration of new surface terminals remains a challenge. Here, we synthesized Ti3C2 MXene with unitary, binary and ternary halogen terminals, e.g. -Cl, -Br, -I, -BrI and -ClBrI, to investigate the effect of surface chemistry on the properties of MXenes. The electrochemical activity of Br and I element result in the extraordinary electrochemical performance of the MXenes as cathodes for aqueous zinc ion batteries. The -Br and -I containing MXenes, e.g. Ti3C2Br2 and Ti3C2I2, exhibit distinct discharge platforms with considerable capacities of 97.6 mAh g-1 and 135 mAh g-1. Ti3C2(BrI) and Ti3C2(ClBrI) exhibit dual discharge platforms with capacities of 117.2 mAh g-1 and 106.7 mAh g-1. In contrast, the previously discovered MXenes Ti3C2Cl2 and Ti3C2(OF) exhibit no discharge platforms, and only ~50% of capacities and energy densities of Ti3C2Br2. These results emphasize the effectiveness of the Lewis-acidic-melt etching route for tuning the surface chemistry of MXenes, and also show promise for expanding the MXene family towards various applications. △ Less

Submitted 16 June, 2020; originally announced June 2020.

Mechanical properties of VMoNO as a function of oxygen concentration: toward development of hard and tough refractory oxynitrides

Authors: Daniel Edström, Davide G. Sangiovanni, Ludvig Landälv, Per Eklund, J. E. Greene, Ivan Petrov, Lars Hultman, Valeriu Chirita

Abstract: Improved toughness is a central goal in the development of wear-resistant refractory ceramic coatings. Extensive theoretical and experimental research has revealed that NaCl structure VMoN alloys exhibit surprisingly high ductility combined with high hardness and toughness. However, during operation, protective coatings inevitably oxidize, a problem which may compromise material properties and per… ▽ More Improved toughness is a central goal in the development of wear-resistant refractory ceramic coatings. Extensive theoretical and experimental research has revealed that NaCl structure VMoN alloys exhibit surprisingly high ductility combined with high hardness and toughness. However, during operation, protective coatings inevitably oxidize, a problem which may compromise material properties and performance. Here, we explore the role of oxidation in altering VMoN properties. Density functional theory and theoretical intrinsic hardness models are used to investigate the mechanical behavior of cubic V0.5Mo0.5N1-xOx solid solutions as a function of the oxygen concentration x. Elastic-constant and intrinsic hardness calculations show that oxidation does not degrade the mechanical properties of V0.5Mo0.5N. Electronic structure analyses indicate that the presence of oxygen reduces the covalent bond character, which slightly lowers the alloy strength and intrinsic hardness. Nevertheless, the character of metallic d-d states, which are crucial for allowing plastic deformation and enhancing toughness, remains unaffected. Overall, our results suggest that VMoNO oxynitrides, with oxygen concentrations as high as 50%, possess high intrinsic hardness, while still being ductile. △ Less

Submitted 11 November, 2019; originally announced November 2019.

Journal ref: Journal of Vacuum Science Technology A 37, 061508 (2019)

Influence of Si do** and O2-flow on arc deposited (Al,Cr)2O3 coatings

Authors: Ludvig Landälv, Emmanuelle Göthelid, Jens Jensen, Grzegorz Greczynski, Jun Lu, Mats Ahlgren, Lars Hultman, Björn Alling, Per Eklund

Abstract: (Al,Cr)2O3 coatings with Al/(Al+Cr) = 0.5 or Al = 70 at.%, doped with 0, 5 or 10 at.% Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings showed between 3.3 and 7.4 at.% metal fraction Si incorporated into all studied coatings depending on cathode Si-composition. The incorporated Si content does n… ▽ More (Al,Cr)2O3 coatings with Al/(Al+Cr) = 0.5 or Al = 70 at.%, doped with 0, 5 or 10 at.% Si, were deposited on hard metal and Si(100) substrates to elucidate the influence of Si on the resulting coatings. The chemical analysis of the coatings showed between 3.3 and 7.4 at.% metal fraction Si incorporated into all studied coatings depending on cathode Si-composition. The incorporated Si content does not change significantly with different oxygen flow covering a wide range of deposition conditions from low to high O2 flow during growth. The addition of Si promotes the metastable B1-like cubic structure over the thermodynamically stable corundum structure. The hardness determined by nanoindentation of the as-deposited coatings is slightly reduced upon Si-incorporation as well as upon increased Al-content. Si is found enriched in droplets but can also be found at a lower content, evenly spread, without visible segregation on the ~5 nm scale, in the actual oxide coating. The positive effect of improved cathode erosion upon Si-incorporation has to be balanced against the promotion of the metastable B1-like structure, having lower room temperature hardness and inferior thermal stability compared to the corundum structure. △ Less

Submitted 21 October, 2019; originally announced October 2019.

A general Lewis acidic etching route for preparing MXenes with enhanced electrochemical performance in non-aqueous electrolyte

Authors: Youbing Li, Hui Shao, Zifeng Lin, Jun Lu, Per O. A. Persson, Per Eklund, Lars Hultman, Mian Li, Ke Chen, Xian-Hu Zha, Shiyu Du, Patrick Rozier, Zhifang Chai, Encarnacion Raymundo-Piñero, Pierre-Louis Taberna, Patrice Simon, Qing Huang

Abstract: Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of 2D materials that draw attention as energy storage materials. So far, MXenes are mainly prepared from Al-containing MAX phases (where A = Al) by Al dissolution in F-containing solution, but most other MAX phases have not been explored. Here, a redox-controlled A-site-etching of MAX phases in L… ▽ More Two-dimensional carbides and nitrides of transition metals, known as MXenes, are a fast-growing family of 2D materials that draw attention as energy storage materials. So far, MXenes are mainly prepared from Al-containing MAX phases (where A = Al) by Al dissolution in F-containing solution, but most other MAX phases have not been explored. Here, a redox-controlled A-site-etching of MAX phases in Lewis acidic melts is proposed and validated by the synthesis of various MXenes from unconventional MAX phase precursors with A elements Si, Zn, and Ga. A negative electrode of Ti3C2 MXene material obtained through this molten salt synthesis method delivers a Li+ storage capacity up to 738 C g-1 (205 mAh g-1) with high-rate performance and pseudocapacitive-like electrochemical signature in 1M LiPF6 carbonate-based electrolyte. MXene prepared from this molten salt synthesis route offer opportunities as high-rate negative electrode material for electrochemical energy storage applications. △ Less

Submitted 29 September, 2019; originally announced September 2019.

Deposition of MAX phase containing thin films from a (Ti,Zr)2AlC compound target

Authors: Clio Azina, Bensu Tunca, Andrejs Petruhins, Binbin Xin, Melike Yildizhan, Per O. Å. Persson, Jozef Vleugels, Konstantina Lambrinou, Johanna Rosén, Per Eklund

Abstract: This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging between 500 and 900 °C. The presence of Al within the carbide structure was evidenced by lattice parameter variations. Furthermore, chemical analyses showed that the… ▽ More This work reports on sputter depositions carried out from a compound (Ti,Zr)2AlC target, whereupon Al-containing (Ti,Zr)C thin films (30-40 nm in thickness) were deposited on MgO(111) and Al2O3(0001) substrates at temperatures ranging between 500 and 900 °C. The presence of Al within the carbide structure was evidenced by lattice parameter variations. Furthermore, chemical analyses showed that the Al distribution throughout the film thickness was fairly homogeneous. Thicker films (80-90 nm) deposited from the same compound target consisted of the pseudo-binary (Ti,Zr)C and intermetallic compounds in the Ti-Zr-Al system up to 800 °C, as well as solid solution MAX phases with different Ti:Zr ratios at 900 °C. X-ray diffraction and transmission electron microscopy showed that both (Ti,Zr)2AlC and (Ti,Zr)3AlC2 solid solution MAX phases were formed. Moreover, this work discusses the growth mechanism of the thicker films, which started with the formation of the mixed (Ti,Zr)C carbide, followed by the nucleation and growth of aluminides, eventually leading to the formation of the MAX phases, which was the primary objective of the sputter depositions. △ Less

Submitted 12 August, 2020; v1 submitted 9 September, 2019; originally announced September 2019.

Multielemental single-atom-thick A layers in nanolaminated V2(Sn, A)C (A=Fe, Co, Ni, Mn) for tailoring magnetic properties

Authors: Youbing Li, Jun Lu, Mian Li, Keke Chang, Xianhu Zha, Yiming Zhang, Ke Chen, Per O. A. Persson, Lars Hultman, Per Eklund, Shiyu Du, Zhifang Chai, Zhengren Huang, Qing Huang

Abstract: Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report a series of inherently nanolaminated V2(A'xSn1-x)C (A'=Fe, Co, Ni and Mn, and combinations thereof, with x=1/3) synthesized by an alloy-guided reaction… ▽ More Tailoring of individual single-atom-thick layers in nanolaminated materials offers atomic-level control over material properties. Nonetheless, multielement alloying in individual atomic layers in nanolaminates is largely unexplored. Here, we report a series of inherently nanolaminated V2(A'xSn1-x)C (A'=Fe, Co, Ni and Mn, and combinations thereof, with x=1/3) synthesized by an alloy-guided reaction. The simultaneous occupancy of the four magnetic elements and Sn, the individual single-atom-thick A layers in the compound constitute high-entropy-alloy analogues, two-dimensional in the sense that the alloying exclusively occurs in the A layers. V2(A'xSn1-x)C exhibit distinct ferromagnetic behavior that can be compositionally tailored from the multielement A-layer alloying. This two-dimensional alloying provides a structural-design route with expanded chemical space for discovering materials and exploit properties. △ Less

Submitted 10 August, 2019; originally announced August 2019.

Synthesis of MAX Phases Nb2CuC and Ti2(Al0.1Cu0.9)N by A-site Replacement Reaction in Molten Salts

Authors: Haoming Ding, Youbing Li, Jun Lu, Kan Luo, Ke Chen, Mian Li, Per O. A. Persson, Lars Hultman, Per Eklund, Shiyu Du, Zhengren Huang, Zhifang Chai, Hongjie Wang, ** Huang, Qing Huang

Abstract: New MAX phases Ti2(AlxCu1-x)N and Nb2CuC were synthesized by A-site replacement by reacting Ti2AlN and Nb2AlC, respectively, with CuCl2 or CuI molten salt. X-ray diffraction, scanning electron microscopy, and atomically-resolved scanning transmission electron microscopy showed complete A-site replacement in Nb2AlC, which lead to formation of Nb2CuC. However, the replacement of Al in Ti2AlN phase w… ▽ More New MAX phases Ti2(AlxCu1-x)N and Nb2CuC were synthesized by A-site replacement by reacting Ti2AlN and Nb2AlC, respectively, with CuCl2 or CuI molten salt. X-ray diffraction, scanning electron microscopy, and atomically-resolved scanning transmission electron microscopy showed complete A-site replacement in Nb2AlC, which lead to formation of Nb2CuC. However, the replacement of Al in Ti2AlN phase was only close to complete at Ti2(Al0.1Cu0.9)N. Density-functional theory calculations corroborated the structural stability of Nb2CuC and Ti2CuN phases. Moreover, the calculated cleavage energy in these Cu-containing MAX phases are weaker than in their Al-containing counterparts, indicating that they are precursor candidates for MXene derivation. △ Less

Submitted 23 July, 2019; v1 submitted 19 July, 2019; originally announced July 2019.

Comments: author name corrected

Phase composition and transformations in magnetron-sputtered (Al,V)2O3 coatings

Authors: L. Landälv, C-F. Carlström, J. Lu, Daniel Primetzhofer, M. J. Jõesaar, M. Ahlgren, E. Göthelid, B. Alling, L. Hultman, P. Eklund

Abstract: Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma… ▽ More Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 °C. XRD showed three different crystal structures depending on V-metal fraction in the coating: α-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure γ-Al2O3. The microstructure changes from large columnar faceted grains for α-V2O3 to smaller equiaxed grains when lowering the vanadium content toward pure γ-Al2O3. Annealing in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 °C for 42 at.% V and 700 °C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure γ-Al2O3-coating, which transformed to α-Al2O3 after annealing to 1100° C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings. △ Less

Submitted 20 August, 2019; v1 submitted 16 May, 2019; originally announced May 2019.

Optical and mechanical properties of amorphous Mg-Si-O-N thin films deposited by reactive magnetron sputtering

Authors: Sharafat Ali, Biplab Paul, Roger Magnusson, Erik Ekstrom, Camille Pallier, Bo Jonson, Per Eklund, Jens Birch

Abstract: In this work, amorphous thin films in Mg-Si-O-N system were prepared in order to investigate the dependence of optical and mechanical properties on Mg composition. Reactive RF magnetron co-sputtering from magnesium and silicon targets were used for the deposition of Mg-Si-O-N thin films. Films were deposited on float glass, silica wafers and sapphire substrates in an Ar, N2 and O2 gas mixture. X-r… ▽ More In this work, amorphous thin films in Mg-Si-O-N system were prepared in order to investigate the dependence of optical and mechanical properties on Mg composition. Reactive RF magnetron co-sputtering from magnesium and silicon targets were used for the deposition of Mg-Si-O-N thin films. Films were deposited on float glass, silica wafers and sapphire substrates in an Ar, N2 and O2 gas mixture. X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, spectroscopic ellipsometry, and nanoindentation were employed to characterize the composition, surface morphology, and properties of the films. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Compositional dependence of epitaxial Tin+1SiCn MAX-phase thin films grown from a Ti3SiC2 compound target

Authors: Martin Magnusona, Lina Tengdelius, Grzegorz Greczynski, Fredrik Eriksson, Jens Jensen, Jun Lu, Mattias Samuelsson, Per Eklund, Lars Hultman, Hans Högberg

Abstract: We investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 oC as well as the influence of the sputtering power at 850 oC for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained… ▽ More We investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 oC as well as the influence of the sputtering power at 850 oC for the deposition of Ti3SiC2 films on Al2O3(0001) substrates. Elemental composition obtained from time-of-flight energy elastic recoil detection analysis shows an excess of carbon in all films, which is explained by differences in angular distribution between C, Si and Ti, where C scatters the least during sputtering. The oxygen content is 2.6 at.% in the film deposited at RT and decreases with increasing deposition temperature, showing that higher temperatures favor high purity films. Chemical bonding analysis by X-ray photoelectron spectroscopy shows C-Ti and Si-C bonding in the Ti3SiC2 films and Si-Si bonding in the Ti3SiC2 compound target. X-ray diffraction reveals that the phases Ti3SiC2, Ti4SiC3, and Ti7Si2C5 can be deposited from a Ti3SiC2 compound target at substrate temperatures above 850 oC and with growth of TiC and the Nowotny phase Ti5Si3Cx at lower temperatures. High-resolution scanning transmission electron microscopy shows epitaxial growth of Ti3SiC2, Ti4SiC3, and Ti7Si2C5 on TiC at 970 oC. Four-point probe resistivity measurements give values in the range 120 to 450 micro-Ohm-cm and with the lowest values obtained for films containing Ti3SiC2, Ti4SiC3, and Ti7Si2C5. △ Less

Submitted 17 January, 2019; originally announced January 2019.

Comments: 14 pages, 7 figures

Journal ref: J. Vac. Sci. Technol. A. 37, 021506 (2019)

Tin+1Cn MXene with fully saturated and thermally stable Cl terminations

Authors: J. Lu, I. Persson, H. Lind, M. Li, Y. Li, K. Chen, J. Zhou, S. Du, Z. Chai, Z. Huang, L. Hultman, J. Rosen, P. Eklund, Q. Huang, P. O. Å. Persson

Abstract: MXenes are a rapidly growing family of 2D materials that exhibit a highly versatile structure and composition, allowing for significant tuning of the material properties. These properties are, however, ultimately limited by the surface terminations, which are typically a mixture of species, including F and O that are inherent to the MXene processing. Other and robust terminations are lacking. Here… ▽ More MXenes are a rapidly growing family of 2D materials that exhibit a highly versatile structure and composition, allowing for significant tuning of the material properties. These properties are, however, ultimately limited by the surface terminations, which are typically a mixture of species, including F and O that are inherent to the MXene processing. Other and robust terminations are lacking. Here, we apply high-resolution scanning transmission electron microscopy (STEM), corresponding image simulations and first-principles calculations to investigate the surface terminations on MXenes synthesized from MAX phases through Lewis acidic melts. The results show that atomic Cl terminates the synthesized MXenes, with mere residual presence of other termination species. Furthermore, in situ STEM-electron energy loss spectroscopy (EELS) heating experiments show that the Cl terminations are stable up to 750 °C. Thus, we present an attractive new termination that widely expands the MXenes functionalization space and enable new applications. △ Less

Submitted 16 January, 2019; originally announced January 2019.

Comments: 14 pages, 4 figures, 5 pages supplemental info

Element Replacement Approach by Reaction with Lewis Acidic Molten Salts to Synthesize Nanolaminated MAX Phases and MXenes

Authors: Mian Li, Jun Lu, Kan Luo, Youbing Li, Keke Chang, Ke Chen, Jie Zhou, Johanna Rosen, Lars Hultman, Per Eklund, Per O. Å. Persson, Shiyu Du, Zhifang Chai, Zhengren Huang, Qing Huang

Abstract: Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesize a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition metal halides. The approach is a top-down route that enables the late transitional element… ▽ More Nanolaminated materials are important because of their exceptional properties and wide range of applications. Here, we demonstrate a general approach to synthesize a series of Zn-based MAX phases and Cl-terminated MXenes originating from the replacement reaction between the MAX phase and the late transition metal halides. The approach is a top-down route that enables the late transitional element atom (Zn in the present case) to occupy the A site in the pre-existing MAX phase structure. Using this replacement reaction between Zn element from molten ZnCl2 and Al element in MAX phase precursors (Ti3AlC2, Ti2AlC, Ti2AlN, and V2AlC), novel MAX phases Ti3ZnC2, Ti2ZnC, Ti2ZnN, and V2ZnC were synthesized. When employing excess ZnCl2, Cl terminated MXenes (such as Ti3C2Cl2 and Ti2CCl2) were derived by a subsequent exfoliation of Ti3ZnC2 and Ti2ZnC due to the strong Lewis acidity of molten ZnCl2. These results indicate that A-site element replacement in traditional MAX phases by late transition metal halides opens the door to explore MAX phases that are not thermodynamically stable at high temperature and would be difficult to synthesize through the commonly employed powder metallurgy approach. In addition, this is the first time that exclusively Cl-terminated MXenes were obtained, and the etching effect of Lewis acid in molten salts provides a green and viable route to prepare MXenes through an HF-free chemical approach. △ Less

Submitted 15 March, 2019; v1 submitted 15 January, 2019; originally announced January 2019.

Comments: Title changed; experimental section and discussion revised

Journal ref: J. Am. Chem. Soc. 2019, 141, 11, 4730-4737

Effect of impurities on morphology and growth mode of (111) and (001) epitaxial-like ScN films

Authors: Arnaud le Febvrier, Nina Tureson, Nina Stilkerich, Grzegorz Greczynski, Per Eklund

Abstract: ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride semiconductors used for their interesting electrical properties are sensitive to contaminants, such as oxygen or fluorine. In this present article, the influence of d… ▽ More ScN material is an emerging semiconductor with an indirect bandgap. It has attracted attention for its thermoelectric properties, use as seed layers, and for alloys for piezoelectric application. ScN or other transition metal nitride semiconductors used for their interesting electrical properties are sensitive to contaminants, such as oxygen or fluorine. In this present article, the influence of depositions conditions on the amount of oxygen contaminants incorporated in ScN films were investigated and their effects on the electrical properties (electrical resistivity and Seebeck coefficient) were studied. The epitaxial-like films of thickness 125 +-5 nm to 155 +-5 nm were deposited by D.C.-magnetron sputtering on c-plane Al2O3, MgO(111) and r-plane Al2O3 at a substrate temperature ranging from 700 to 950 degree C. The amount of oxygen contaminants presents in the film, dissolved into ScN or as an oxide, was related to the adatom mobility during growth, which is affected by the deposition temperature and the presence of twin domain growth. The lowest values of electrical resistivity of 50 micro-ohm cm were obtained on ScN(111)/MgO(111) and on ScN(001)/r-plane Al2O3 grown at 950 degree C with no twin domains and the lowest amount of oxygen contaminant. At the best, the films exhibited an electrical resistivity of 50 micro-ohm cm with Seebeck coefficient values maintained at -40 microV K-1, thus a power factor estimated at 3.2 10-3 W m-1 K-2 (at room temperature). △ Less

Submitted 5 October, 2018; originally announced October 2018.

Effect of ion-implantation-induced defects and Mg dopants on thermoelectric properties of ScN

Authors: Nina Tureson, Marc Marteau, Thierry Cabioch, Ngo Van Nong, Jens Jensen, Jun Lu, Grzegorz Greczynski, Daniele Fournier, Niraj Singh, Ajay Soni, Laurent Belliard, Per Eklund, Arnaud le Febvrier

Abstract: For applications in energy harvesting, environmentally friendly cooling, and as power sources in remote or portable applications, it is desired to enhance the efficiency of thermoelectric materials. One strategy consists of reducing the thermal conductivity while increasing or retaining the thermoelectric power factor. An approach to achieve this is do** to enhance the Seebeck coefficient and el… ▽ More For applications in energy harvesting, environmentally friendly cooling, and as power sources in remote or portable applications, it is desired to enhance the efficiency of thermoelectric materials. One strategy consists of reducing the thermal conductivity while increasing or retaining the thermoelectric power factor. An approach to achieve this is do** to enhance the Seebeck coefficient and electrical conductivity, while simultaneously introducing defects in the materials to increase phonon scattering. Here, we use Mg ion implantation to induce defects in epitaxial ScN (111) films. The films were implanted with Mg+ ions with different concentration profiles along the thickness of the film, incorporating 0.35 to 2.2 at.% of Mg in ScN. Implantation at high temperature (600 C), with few defects due to the temperature, does not substantially affect the thermal conductivity compared to a reference ScN. Samples implanted at room temperature, in contrast, exhibited a reduction of the thermal conductivity by a factor of three. The sample doped with 2.2 at.% Mg also showed an increased power factor after implantation. This study thus shows the effect of ion-induced defects on thermal conductivity of ScN films. High-temperature implantation allows the defects to be annealed out during implantation, while the defects are retained for room-temperature implanted samples, allowing for a drastic reduction in thermal conductivity. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Comments: Main manuscript: 22 pages, 7 figures Supplemental information: 10 pages, 10 figures

Journal ref: Phys. Rev. B 98, 205307 (2018)

The origin of anisotropy and high density of states in the electronic structure of Cr$_2$GeC by means of polarized soft X-ray spectroscopy and ab initio calculations

Authors: Martin Magnuson, Maurizio Mattesini, Matthieu Bugnet, Per Eklund

Abstract: The anisotropy in the electronic structure of the inherently nanolaminated ternary phase Cr$_{2}$GeC is investigated by bulk-sensitive and element selective soft x-ray absorption/emission spectroscopy. The angle-resolved absorption/emission measurements reveal differences between the in-plane and out-of-plane bonding at the (0001) interfaces of Cr$_{2}$GeC. The Cr $L_{2,3}$, C $K$, and Ge $M_{1}$,… ▽ More The anisotropy in the electronic structure of the inherently nanolaminated ternary phase Cr$_{2}$GeC is investigated by bulk-sensitive and element selective soft x-ray absorption/emission spectroscopy. The angle-resolved absorption/emission measurements reveal differences between the in-plane and out-of-plane bonding at the (0001) interfaces of Cr$_{2}$GeC. The Cr $L_{2,3}$, C $K$, and Ge $M_{1}$, $M_{2,3}$ emission spectra are interpreted with first-principles density-functional theory (DFT) including core-to-valence dipole transition matrix elements. For the Ge $4s$ states, the x-ray emission measurements reveal two orders of magnitude higher intensity at the Fermi level than DFT within the General Gradient Approximation (GGA) predicts. We provide direct evidence of anisotropy in the electronic structure and the orbital occupation that should affect the thermal expansion coefficient and transport properties. As shown in this work, hybridization and redistribution of intensity from the shallow $3d$ core levels to the $4s$ valence band explain the large Ge density of states at the Fermi level. △ Less

Submitted 30 September, 2015; originally announced September 2015.

Comments: 8 pages, 5 figures, http://iopscience.iop.org/article/10.1088/0953-8984/27/41/415501/meta;jsessionid=871D247E3FCB99A5EEB41A656054C246.c1

Journal ref: J. Phys. Cond. Mat. 27 , 415501 (2015)

Dirac points with giant spin-orbit splitting in the electronic structure of two-dimensional transition-metal carbides

Authors: Hossein Fashandi, Viktor Ivády, Per Eklund, Anita Lloyd Spetz, Mikhail I. Katsnelson, Igor A. Abrikosov

Abstract: Two-dimensional (2D) materials, especially their most prominent member, graphene, have greatly influenced many scientific areas. Moreover, they have become a base for investigating the relativistic properties of condensed matter within the emerging field of Dirac physics. This has ignited an intense search for new materials where charge carriers behave as massless or massive Dirac fermions. Here,… ▽ More Two-dimensional (2D) materials, especially their most prominent member, graphene, have greatly influenced many scientific areas. Moreover, they have become a base for investigating the relativistic properties of condensed matter within the emerging field of Dirac physics. This has ignited an intense search for new materials where charge carriers behave as massless or massive Dirac fermions. Here, we theoretically show the existence of Dirac electrons in a series of 2D transition-metal carbides, known as MXenes. They possess twelve conical crossings in the 1st Brillouin zone with giant spin-orbit splitting. Our findings indicate that the 2D band structure of MXenes is protected against external perturbations and preserved even in multilayer phases. These results, together with the broad possibilities to engineer the properties of these materials phases, make Dirac MXenes a potential candidate for studying and develo** novel Dirac-physics-based technologies. △ Less

Submitted 14 October, 2015; v1 submitted 17 June, 2015; originally announced June 2015.

Comments: 4 figures and supplementary

Journal ref: Phys. Rev. B 92, 155142 (2015)

The electronic-structure origin of the anisotropic thermopower of nanolaminated Ti3SiC2 determined by polarized x-ray spectroscopy and Seebeck measurements

Authors: Martin Magnuson, Maurizio Mattesini, Ngo Van Nong, Per Eklund, Lars Hultman

Abstract: Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here, we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to anisotropies in element-specific electronic states. In bulk polycrystalline form, Ti3SiC2 has a virtually z… ▽ More Nanolaminated materials exhibit characteristic magnetic, mechanical, and thermoelectric properties, with large contemporary scientific and technological interest. Here, we report on the anisotropic Seebeck coefficient in nanolaminated Ti3SiC2 single-crystal thin films and trace the origin to anisotropies in element-specific electronic states. In bulk polycrystalline form, Ti3SiC2 has a virtually zero Seebeck coefficient over a wide temperature range. In contrast, we find that the in-plane (basal ab) Seebeck coefficient of Ti3SiC2, measured on single-crystal films has a substantial and positive value of 4-6 muV/K. Employing a combination of polarized angle-dependent x-ray spectroscopy and density functional theory we directly show electronic structure anisotropy in inherently nanolaminated Ti3SiC2 single-crystal thin films as a model system. The density of Ti 3d and C 2p states at the Fermi level in the basal ab-plane is about 40 % higher than along the c-axis. The Seebeck coefficient is related to electron and hole-like bands close to the Fermi level but in contrast to ground state density functional theory modeling, the electronic structure is also influenced by phonons that need to be taken into account. Positive contribution to the Seebeck coefficient of the element-specific electronic occupations in the basal plane is compensated by 73 % enhanced Si 3d electronic states across the laminate plane that give rise to a negative Seebeck coefficient in that direction. Strong phonon vibration modes with three to four times higher frequency along the c-axis than along the basal ab-plane also influence the electronic population and the measured spectra by the asymmetric average displacements of the Si atoms. These results constitute experimental evidence explaining why the average Seebeck coefficient of Ti3SiC2 in polycrystals is negligible over a wide temperature range. △ Less

Submitted 22 May, 2012; originally announced May 2012.

Comments: 13 pages, 6 figures; http://prb.aps.org/abstract/PRB/v85/i19/e195134

Journal ref: Phys. Rev. B 85, 195134 (2012)

Electronic structure investigation of Ti3AlC2, Ti3SiC2, and Ti3GeC2 by soft-X-ray emission spectroscopy

Authors: M. Magnuson, J. -P. Palmquist, M. Mattesini, S. Li, R. Ahuja, O. Eriksson, J. Emmerlich, O. Wilhelmsson, P. Eklund, H. Högberg, L. Hultman, U. Jansson

Abstract: The electronic structures of epitaxially grown films of Ti3AlC2, Ti3SiC2 and Ti3GeC2 have been investigated by bulk-sensitive soft X-ray emission spectroscopy. The measured high-resolution Ti L, C K, Al L, Si L and Ge M emission spectra are compared with ab initio density-functional theory including core-to-valence dipole matrix elements. A qualitative agreement between experiment and theory is ob… ▽ More The electronic structures of epitaxially grown films of Ti3AlC2, Ti3SiC2 and Ti3GeC2 have been investigated by bulk-sensitive soft X-ray emission spectroscopy. The measured high-resolution Ti L, C K, Al L, Si L and Ge M emission spectra are compared with ab initio density-functional theory including core-to-valence dipole matrix elements. A qualitative agreement between experiment and theory is obtained. A weak covalent Ti-Al bond is manifested by a pronounced shoulder in the Ti L-emission of Ti3AlC2. As Al is replaced with Si or Ge, the shoulder disappears. For the buried Al and Si-layers, strongly hybridized spectral shapes are detected in Ti3AlC2 and Ti3SiC2, respectively. As a result of relaxation of the crystal structure and the increased charge-transfer from Ti to C, the Ti-C bonding is strengthened. The differences between the electronic structures are discussed in relation to the bonding in the nanolaminates and the corresponding change of materials properties. △ Less

Submitted 29 December, 2011; originally announced December 2011.

Comments: 15 pages, 8 figures

Journal ref: Physical Review B 72, 245101 (2005)

A non-dispersive Raman D-band activated by well-ordered interlayer interactions in rotationally stacked bi-layer Graphene

Authors: Awnish K. Gupta, Youjian Tang, Vincent H. Crespi, Peter C. Eklund

Abstract: Raman measurements on monolayer graphene folded back upon itself as an ordered but skew-stacked bilayer (i.e. with interlayer rotation) presents new mechanism for Raman scattering in sp2 carbons that arises in systems that lack coherent AB interlayer stacking. Although the parent monolayer does not exhibit a D-band, the interior of the skewed bilayer produces a strong two-peak Raman feature near 1… ▽ More Raman measurements on monolayer graphene folded back upon itself as an ordered but skew-stacked bilayer (i.e. with interlayer rotation) presents new mechanism for Raman scattering in sp2 carbons that arises in systems that lack coherent AB interlayer stacking. Although the parent monolayer does not exhibit a D-band, the interior of the skewed bilayer produces a strong two-peak Raman feature near 1350 cm-1; one of these peaks is non-dispersive, unlike all previously observed D-band features in sp2 carbons. Within a double-resonant model of Raman scattering, these unusual features are consistent with a skewed bilayer coupling, wherein one layer imposes a weak but well-ordered perturbation on the other. The discrete Fourier structure of the rotated interlayer interaction potential explains the unusual non-dispersive peak near 1350 cm-1. △ Less

Submitted 20 May, 2010; originally announced May 2010.

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

Authors: S. -H. Cheng, K. Zou, F. Okino, H. R. Gutierrez, A. Gupta, N. Shen, P. C. Eklund, J. O. Sofo, J. Zhu

Abstract: We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of local… ▽ More We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$Ω$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hop** in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$Ω$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications. △ Less

Submitted 1 May, 2010; originally announced May 2010.

Comments: 7 pages, 5 figures, revtex, to appear in PRB

Journal ref: Phys. Rev. B 81, 205435 (2010)

Raman scattering from high frequency phonons in supported n-graphene layer films

Authors: Awnish Gupta, Gugang Chen, P. Joshi, S. Tadigadapa, P. C. Eklund

Abstract: Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm radiation on films containing from n=1 to 20 graphene layers, as determined by atomic force microscopy. Both the 1st and 2nd order Raman spectra show unique… ▽ More Results of room temperature Raman scattering studies of ultrathin graphitic films supported on Si (111)/SiO2 substrates are reported. The results are significantly different from those known for graphite. Spectra were collected using 514 nm radiation on films containing from n=1 to 20 graphene layers, as determined by atomic force microscopy. Both the 1st and 2nd order Raman spectra show unique signatures of the number of layers in the film. The nGL film analog of the Raman G-band in graphite exhibits a Lorentzian lineshape whose center frequency shifts linearly relative to graphite as ~1/n (for n=1 G-band frequency ~1588 cm-1). Three weak bands, identified with disorder-induced 1st order scattering, are observed at ~ 1350, 1450 and 1500 cm-1. The 1500 cm-1 band is weak but relatively sharp and exhibits an interesting n-dependence. In general, the intensity of these D-bands decreases dramatically with increasing n. Three 2nd order bands are also observed (~2450, ~2700 and 3248 cm-1). They are analogs to those observed in graphite. However, the ~2700 cm-1 band exhibits an interesting and dramatic change of shape with n. Interestingly, for n<5 this 2nd order band is more intense than the G-band. △ Less

Submitted 23 June, 2006; originally announced June 2006.

Comments: 10 pages, 7 fig's

Raman Spectroscopic Investigation of H2, HD, and D2 Physisorption on Ropes of Single-Walled, Carbon Nanotubes

Authors: Keith A. Williams, Bhabendra K. Pradhan, Peter C. Eklund, Milen K. Kostov, Milton W. Cole

Abstract: We have observed the S- and Q-branch Raman spectra of H2, HD, and D2 adsorbed at 85K and pressures up to 8 atm on single-walled, carbon nanotubes (SWNT). Comparative data for H2 on graphite and C60 were also collected. For each adsorbate, we observed a small shift in the Q-branch frequencies relative to the gas-phase values. To aid in interpreting this result, we constructed an H2-surface potent… ▽ More We have observed the S- and Q-branch Raman spectra of H2, HD, and D2 adsorbed at 85K and pressures up to 8 atm on single-walled, carbon nanotubes (SWNT). Comparative data for H2 on graphite and C60 were also collected. For each adsorbate, we observed a small shift in the Q-branch frequencies relative to the gas-phase values. To aid in interpreting this result, we constructed an H2-surface potential, including van der Waals and electrostatic terms. Computed shifts based on this potential are in good agreement with our data. △ Less

Submitted 24 April, 2001; originally announced April 2001.

Comments: 6 pages, 3 figures