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On the energy conversion efficiency of the bulk photovoltaic effect
Authors:
Andreas Pusch,
Udo Römer,
Dimitrie Culcer,
Nicholas J. Ekins-Daukes
Abstract:
The bulk photovoltaic effect (BPVE) leads to directed photo-currents and photo-voltages in bulk materials. Unlike photo-voltages in p-n junction solar cells that are limited by carrier recombination to values below the bandgap energy of the absorbing material, the BPVE photo-voltages have been shown to greatly exceed the bandgap energy. Therefore the BPVE is not subject to the Shockley-Queisser li…
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The bulk photovoltaic effect (BPVE) leads to directed photo-currents and photo-voltages in bulk materials. Unlike photo-voltages in p-n junction solar cells that are limited by carrier recombination to values below the bandgap energy of the absorbing material, the BPVE photo-voltages have been shown to greatly exceed the bandgap energy. Therefore the BPVE is not subject to the Shockley-Queisser limit for sunlight to electricity conversion in single junction solar cells and experimental claims of efficiencies beyond this limit have been made. Here, we show that BPVE energy conversion efficiencies are, in practice, orders of magnitude below the Shockley-Queisser limit of single junction solar cells and are subject to different, more stringent limits. The name BPVE stands for two different fundamental effects, the shift current and the injection current. In both of these, the voltage bias necessary to produce electrical energy, accelerates both, intrinsic and photo-generated, carriers. We discuss how energy conservation alone fundamentally limits the BPVE to a bandgap-dependent value that exceeds the Shockley Queisser limit only for very small bandgaps. Yet, small bandgap materials have a large number of intrinsic carriers, leading to high conductivity which suppresses the photo-voltage. We discuss further how slightly more stringent fundamental limits for injection (ballistic) currents may be derived from the trade-off between high resistivity, needed for a high voltage, and long ballistic transport length, needed for a high current. We also explain how erroneous experimental and theoretical claims of high efficiency have arisen. Finally, we calculate the energy conversion efficiency for an example 2D material that has been suggested as candidate material for high efficiency BPVE based solar cells and show that the efficiency is very similar to the efficiency of known 3D materials.
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Submitted 22 February, 2023; v1 submitted 28 November, 2022;
originally announced November 2022.
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Compositional dependence of direct transition energies in Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys lattice-matched to Ge/GaAs
Authors:
Phoebe M. Pearce,
Sheau Wei Ong,
Andrew D. Johnson,
Eng Soon Tok,
Nicholas J. Ekins-Daukes
Abstract:
Si$_x$Ge$_{1-x-y}$Sn$_y$ ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV we…
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Si$_x$Ge$_{1-x-y}$Sn$_y$ ternary alloys are a candidate material system for use in solar cells and other optoelectronic devices. We report on the direct transition energies and structural properties of Ge-rich Si$_x$Ge$_{1-x-y}$Sn$_y$ alloys with six different compositions up to 10 % Si and 3 % Sn, lattice-matched to Ge or GaAs substrates. The direct transitions occurring between 0.9 and 5.0 eV were investigated using spectroscopic ellipsometry (SE), and the resulting data was used to obtain the dielectric functions of the Si$_x$Ge$_{1-x-y}$Sn$_y$n layer by fitting a multi-layer model. Values for the $E_0$, $E_1$, $Δ_1$, $E_0'$ and $E_2$ transition energies were then found by differentiating these dielectric functions to extract the locations of critical points. Structurally, the composition of the samples was measured using energy-dispersive X-ray measurements (EDX). The lattice constants predicted from these compositions are in good agreement with reciprocal space maps obtained through X-ray diffraction (XRD). The results confirm that a 1 eV direct absorption edge can be achieved using relatively low Si and Sn fractions ($<$ 10 % and $<$ 3 % respectively), while the higher-energy critical points show smaller shifts relative to Ge and match results previously observed or predicted in the literature.
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Submitted 10 March, 2022;
originally announced March 2022.
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Identifying optimal photovoltaic technologies for underwater applications
Authors:
Jason A. Röhr,
Ed Sartor,
Joel N. Duenow,
Zilun Qin,
Juan Meng,
Jason Lipton,
Stephen A. Maclean,
Udo Römer,
Michael P. Nielsen,
Suling Zhao,
Jaemin Kong,
Matthew O. Reese,
Myles A. Steiner,
N. J. Ekins-Daukes,
André D. Taylor
Abstract:
Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct acce…
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Improving solar energy collection in aquatic environments would allow for superior environmental monitoring and remote sensing, but the identification of optimal photovoltaic technologies for such applications is challenging as evaluation requires either field deployment or access to large water tanks. Here, we present a simple bench-top characterization technique that does not require direct access to water and therefore circumvents the need for field testing during initial trials of development. Employing LEDs to simulate underwater solar spectra at various depths, we compare Si and CdTe solar cells, two commercially available technologies, with GaInP cells, a technology with a wide band gap close to ideal for underwater solar harvesting. We use this method to show that while Si cells outperform both CdTe and GaInP under terrestrial AM1.5G solar irradiance, both CdTe and GaInP outperform Si at depths > 2 m, with GaInP cells operating with underwater efficiencies exceeding 51%.
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Submitted 1 June, 2022; v1 submitted 24 October, 2021;
originally announced October 2021.
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Electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge
Authors:
Phoebe M. Pearce,
Christopher A. Broderick,
Michael P. Nielsen,
Andrew D. Johnson,
Nicholas J. Ekins-Daukes
Abstract:
We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform photoreflectance (PR) and photoluminescence (PL) measurements on Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ epitaxial layers grown via chemical vapour deposition, for Si (Sn) compositions u…
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We present a combined experimental and theoretical analysis of the evolution of the near-band gap electronic and optical properties of Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ alloys lattice-matched to Ge and GaAs substrates. We perform photoreflectance (PR) and photoluminescence (PL) measurements on Si$_{x}$Ge$_{1-x-y}$Sn$_{y}$ epitaxial layers grown via chemical vapour deposition, for Si (Sn) compositions up to $x =$ 9.6% ($y =$ 2.5%). Our measurements indicate the presence of an indirect fundamental band gap, with PL observed $\approx$ 200-250 meV lower in energy than the direct $E_0$ transition identified by PR measurements. The measured PL is Ge-like, suggesting that the alloy conduction band (CB) edge is primarily derived from the Ge L-point CB minimum. Interpretation of the PR and PL measurements is supported by atomistic electronic structure calculations. Effective alloy band structures calculated via density functional theory confirm the presence of an indirect fundamental band gap, and reveal the origin of the observed inhomogeneous broadening of the measured optical spectra as being alloy-induced band hybridisation occurring close in energy to the CB edge. To analyze the evolution of the band gap, semi-empirical tight-binding (TB) calculations are employed to enable calculations for large supercell sizes. TB calculations reveal that the alloy CB edge is hybridized in nature, consisting at low Si and Sn compositions of an admixture of Ge L-, $Γ$- and X-point CB edge states, and confirm that the alloy CB edge retains primarily Ge L-point CB edge character. Our experimental measurements and theoretical calculations confirm a direct transition energy close to 1 eV in magnitude for Si and Sn compositions $x =$ 6.8 - 9.6% and $y =$ 1.6 - 2.2%.
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Submitted 18 January, 2022; v1 submitted 1 September, 2021;
originally announced September 2021.
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Optoelectronic Reciprocity in Hot Carrier Solar Cells with Ideal Energy Selective Contacts
Authors:
Andreas Pusch,
Milos Dubajic,
Michael P. Nielsen,
Gavin J. Conibeer,
Stephen P. Bremner,
Nicholas J. Ekins-Daukes
Abstract:
Hot carrier solar cells promise theoretical power conversion efficiencies far beyond the single junction limit. However, practical implementations of hot carrier solar cells have lagged far behind those theoretical predictions. Reciprocity relations for electro-luminescence from conventional single junction solar cells have been extremely successful in driving their efficiency ever closer to the t…
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Hot carrier solar cells promise theoretical power conversion efficiencies far beyond the single junction limit. However, practical implementations of hot carrier solar cells have lagged far behind those theoretical predictions. Reciprocity relations for electro-luminescence from conventional single junction solar cells have been extremely successful in driving their efficiency ever closer to the theoretical limits. In this work, we discuss how the signatures of a functioning hot carrier device should manifest experimentally in electro-luminescence and dark $I-V$ characteristics. Hot carrier properties lead to deviations from the Shockley diode equation that is typical for conventional single junction solar cells. These deviations are directly linked to an increase in temperature of the carriers and therefore the temperature measured from electro-luminescence spectra. We also elucidate how the behaviour of hot carrier solar cells in the dark depends on whether Auger processes play a significant role, revealing a stark contrast between the regime of negligible Auger recombination (carrier conservation model) and dominant Auger recombination (Impact Ionization model) for hot carrier solar cells.
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Submitted 24 June, 2020; v1 submitted 24 June, 2020;
originally announced June 2020.
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Singlet fission and tandem solar cells reduce thermal degradation and enhance lifespan
Authors:
Y. Jiang,
M. P. Nielsen,
A. J. Baldacchino,
M. A. Green,
D. R. McCamey,
M. J. Y. Tayebjee,
T. W. Schmidt,
N. J. Ekins-Daukes
Abstract:
The economic value of a photovoltaic installation depends upon both its lifetime and power conversion efficiency. Progress towards the latter includes mechanisms to circumvent the Shockley- Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG enhanced silicon cell architectures result in lower cell operating temperatures, inc…
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The economic value of a photovoltaic installation depends upon both its lifetime and power conversion efficiency. Progress towards the latter includes mechanisms to circumvent the Shockley- Queisser limit, such as tandem designs and multiple exciton generation (MEG). Here we explain how both silicon tandem and MEG enhanced silicon cell architectures result in lower cell operating temperatures, increasing the device lifetime compared to standard c-Si cells. Also demonstrated are further advantages from MEG enhanced silicon cells: (i) the device architecture can completely circumvent the need for current-matching; and (ii) upon degradation, tetracene, a candidate singlet fission (a form of MEG) material, is transparent to the solar spectrum. The combination of (i) and (ii) mean that the primary silicon device will continue to operate with reasonable efficiency even if the singlet fission layer degrades. The lifespan advantages of singlet fission enhanced silicon cells, from a module perspective, are compared favorably alongside the highly regarded perovskite/silicon tandem and conventional c-Si modules.
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Submitted 14 April, 2020; v1 submitted 11 March, 2020;
originally announced March 2020.
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Performance Analysis and Fault Diagnosis Method for Concentrator Photovoltaic Modules
Authors:
Harsh G. Kamath,
Nicholas J. Ekins-Daukes,
Kenji Araki,
Sheela K. Ramasesha
Abstract:
Concentrator Photovoltaic (CPV) systems use high efficiency multi-junction solar cells with efficiencies >40%, but the module efficiency is often much lower. The increased complexity of a CPV module, with optics, receiver and the tracker gives an increased probability that faults will arise during the operational lifetime. In addition, a location like India has varied atmospheric conditions that f…
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Concentrator Photovoltaic (CPV) systems use high efficiency multi-junction solar cells with efficiencies >40%, but the module efficiency is often much lower. The increased complexity of a CPV module, with optics, receiver and the tracker gives an increased probability that faults will arise during the operational lifetime. In addition, a location like India has varied atmospheric conditions that further complicates the diagnosis of faults. It is therefore important to decouple effects due to the external environment (such as the atmosphere) from effects due to the degradation of the module. By applying a computer model to outdoor CPV test data in Bangalore, India we have established a method to assess the performance of the CPV module and finally we present a method to diagnose faults in the module.
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Submitted 12 December, 2018; v1 submitted 3 July, 2018;
originally announced July 2018.
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Investigation of Carrier Recombination Dynamics of InGaP/InGaAsP Multiple Quantum Wells for Solar Cells via Photoluminescence
Authors:
K. -H. Lee,
K. W. J. Barnham,
John S. Roberts,
D. Alonso-Alvarez,
N. P. Hylton,
M. Fuhrer,
N. J. Ekins-Daukes
Abstract:
The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have very low non-radiative recombination rate and high radiative efficiency compared to the control InGaP sample. Along wi…
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The carrier recombination dynamics of InGaP/InGaAsP quantum wells are reported for the first time. By studying the photoluminescence (PL) and time-resolved PL decay of InGaP/InGaAsP multiple-quantum-well(MQW) heterostructure samples, it is demonstrated that InGaP/InGaAsP MQWs have very low non-radiative recombination rate and high radiative efficiency compared to the control InGaP sample. Along with the analyses of PL emission spectrum and external quantum efficiencies, it suggests that this is due to small confinement potentials in the conduction band but high confinement potentials in the valence band. These results explain several features found in InGaP/InGaAsP MQW solar cells previously.
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Submitted 25 January, 2017; v1 submitted 7 November, 2016;
originally announced November 2016.
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Design guidelines for efficient plasmonic solar cells exploiting the trade-off between scattering and metallic absorption
Authors:
Xiaofeng Li,
Nicholas P. Hylton,
Vincenzo Giannini,
Ned J. Ekins-Daukes,
Stefan A. Maier
Abstract:
We report on the role of plasmonic resonances in determining the delicate balance between scattering and absorption of light in nanometric particle arrays applied to the front surface of solar cells. Strong parasitic absorption is shown to be dependent upon the excitation of localized surface plasmon resonances and prohibits efficient scattering into the underlying semiconductor. Via detailed anal…
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We report on the role of plasmonic resonances in determining the delicate balance between scattering and absorption of light in nanometric particle arrays applied to the front surface of solar cells. Strong parasitic absorption is shown to be dependent upon the excitation of localized surface plasmon resonances and prohibits efficient scattering into the underlying semiconductor. Via detailed analytical and numerical investigations we obtain the dependence of scattering and absorption in nanoparticles upon their complex refractive index. These results provide an insight into the optimum material properties required to minimize parasitic optical absorption, while maintaining high scattering cross-section efficiency, thus providing a general design guideline for efficient light trap** with scattering nanoparticles. The work is extended to include comprehensive optoelectronic simulations of plasmonic solar cells in which the scattering metals are made from either Au, Ag or Al. We show that Al particles provide the closest approximation to the optimized particle refractive index and therefore exhibit the smallest parasitic absorption and correspondingly lead to the greatest solar cell efficiency enhancements. Indeed, for the Al particles we report a full-band enhancement of external quantum efficiency over the reference device.
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Submitted 11 August, 2014;
originally announced August 2014.
