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Extreme ultraviolet lithography reaches 5 nm resolution
Authors:
Iason Giannopoulos,
Iacopo Mochi,
Michaela Vockenhuber,
Yasin Ekinci,
Dimitrios Kazazis
Abstract:
Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV…
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Extreme ultraviolet (EUV) lithography is the leading lithography technique in CMOS mass production, moving towards the sub-10 nm half-pitch (HP) regime with the ongoing development of the next generation high-numerical aperture (high-NA) EUV scanners. Hitherto, EUV interference lithography (EUV-IL) utilizing transmission gratings has been a powerful patterning tool for the early development of EUV resists and related processes, playing a key role in exploring and pushing the boundaries of photon-based lithography. However, achieving pattering with HPs well below 10 nm using this method presents significant challenges. In response, our study introduces a novel EUV-IL setup that employs mirror-based technology and circumvents the limitations of diffraction efficiency towards the diffraction limit that is inherent in conventional grating-based approaches. We present line/space patterning of HSQ resist down to HP 5 nm using the standard EUV wavelength 13.5 nm, and the compatibility of the tool with shorter wavelengths beyond EUV. The mirror-based interference lithography tool paves the way towards the ultimate photon-based resolution at EUV wavelengths and beyond. This advancement is vital for scientific and industrial research, addressing the increasingly challenging needs of nanoscience and technology and future technology nodes of CMOS manufacturing in the few-nanometer HP regime.
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Submitted 28 February, 2024;
originally announced February 2024.
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Resistless EUV lithography: photon-induced oxide patterning on silicon
Authors:
Li-Ting Tseng,
Prajith Karadan,
Dimitrios Kazazis,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Neil J. Curson,
Steven R. Schofield,
Matthias Muntwiler,
Gabriel Aeppli,
Yasin Ekinci
Abstract:
In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons ca…
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In this work, we show the feasibility of extreme ultraviolet (EUV) patterning on an HF-treated Si(100) surface in the absence of a photoresist. EUV lithography is the leading lithography technique in semiconductor manufacturing due to its high resolution and throughput, but future progress in resolution can be hampered because of the inherent limitations of the resists. We show that EUV photons can induce surface reactions on a partially H-terminated Si surface and assist the growth of an oxide layer, which serves as an etch mask. This mechanism is different from the H-desorption in scanning tunneling microscopy-based lithography. We achieve SiO2/Si gratings with 75 nm half-pitch and 31 nm height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist. Further development of the resistless EUV lithography method can be a viable approach to nm-scale lithography by overcoming the inherent resolution and roughness limitations of photoresist materials.
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Submitted 2 October, 2023;
originally announced October 2023.
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Energy efficient manipulation of topologically protected states in non-volatile ultrafast charge configuration memory devices
Authors:
Anze Mraz,
Rok Venturini,
Michele Diego,
Andrej Kranjec,
Damjan Svetin,
Yaroslav Gerasimenko,
Vitomir Sever,
Ian A. Mihailovic,
Jan Ravnik,
Igor Vaskivskyi,
Maria D'Antuono,
Daniela Stornaiulo,
Francesco Tafuri,
Dimitrios Kazazis,
Yasin Ekinci,
Dragan Mihailovic
Abstract:
Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile…
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Non-volatile magnetic storage, from 1940s magnetic core to present day racetrack memory and magnetic anisotropy switching devices rely on the metastability of magnetic domains to store information. However, the inherent inefficiency of converting the information-carrying charge current into magnetization switching sets fundamental limitations in energy consumption. Other non-magnetic non-volatile memories such as memristors, ferroelectric memory and phase change memory devices also rely on energetically relatively costly crystal structural rearrangements to store information. In contrast, conventional electronic charge states in quantum dots for example, can be switched in femtoseconds with high efficiency, but any stored information dissipates rapidly. Here we present a radically different approach in the form of a charge-configuration memory (CCM) device that relies on charge-injection-driven electronic crystal melting and topological protection of the resulting electronic domain configurations of a two-dimensional electronic crystal to store information. With multiprobe scanning tunneling microscopy (STM) we show microscopically, within an operational device, how dislocations in the domain ordering lead to metastability by a mechanism that is topologically equivalent to magnetic bubble memory. The devices have a very small switching energy (<2.2 fJ/bit), ultrafast switching speed of <11 ps and operational range over more than 3 orders of magnitude in temperature (<250 mK ~ 190 K). Together with their simple functionality, a large resistance switching ratio, straightforward fabrication and impressive endurance, CCM devices introduce a new memory paradigm in emerging cryo-computing and other high-performance computing applications that require ultrahigh speed and low energy consumption.
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Submitted 8 March, 2021;
originally announced March 2021.
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Improving the Resolution and Throughput of Achromatic Talbot Lithography
Authors:
Dimitrios Kazazis,
Li-Ting Tseng,
Yasin Ekinci
Abstract:
High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot lithography (ATL). This method offers many advantages over other techniques, such as high resolution, large depth of focus, high throughput, etc. Although the technique…
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High-resolution patterning of periodic structures over large areas has several applications in science and technology. One such method, based on the long-known Talbot effect observed with diffraction gratings, is achromatic Talbot lithography (ATL). This method offers many advantages over other techniques, such as high resolution, large depth of focus, high throughput, etc. Although the technique has been studied in the past, its limits have not yet been explored. Increasing the efficiency and the resolution of the method is essential and might enable many applications in science and technology. In this work, we combine this technique with spatially coherent and quasi-monochromatic light at extreme ultraviolet (EUV) wavelengths and explore new mask design schemes in order to enhance its throughput and resolution. We report on simulations of various mask designs in order to explore their efficiency. Advanced and optimized nanofabrication techniques have to be utilized to achieve high quality and efficient masks for ATL. Exposures using coherent EUV radiation from the Swiss light source (SLS) have been performed, pushing the resolution limits of the technique for dense hole or dot patterning down to 40 nm pitch. In addition, through extensive simulations, alternative mask designs with rings instead of holes are explored for the efficient patterning of hole/dot arrays. We show that these rings exhibit similar aerial images to hole arrays, while enabling higher efficiency and thereby increased throughput for ATL exposures. The mask designs with rings show that they are less prone to problems associated with pattern collapse during the nanofabrication process and therefore are promising for achieving higher resolution.
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Submitted 12 October, 2018;
originally announced October 2018.
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Changes in the near edge X-ray absorption fine structure of hybrid organic-inorganic resists upon exposure
Authors:
Roberto Fallica,
Benjamin Watts,
Benedikt Rösner,
Gioia Della Giustina,
Laura Brigo,
Giovanna Brusatin,
Yasin Ekinci
Abstract:
We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments we…
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We report on the near edge X-ray absorption fine structure (NEXAFS) spectroscopy of hybrid organic-inorganic resists. These materials are nonchemically amplified systems based on Si, Zr, and Ti oxides, synthesized from organically modified precursors and transition metal alkoxides by a sol-gel route and designed for ultraviolet, extreme ultraviolet and electron beam lithography. The experiments were conducted using a scanning transmission X-ray microscope (STXM) which combines high spatial-resolution microscopy and NEXAFS spectroscopy. The absorption spectra were collected in the proximity of the carbon edge (~ 290 eV) before and after in situ exposure, enabling the measurement of a significant photo-induced degradation of the organic group (phenyl or methyl methacrylate, respectively), the degree of which depends on the configuration of the ligand. Photo-induced degradation was more efficient in the resist synthesized with pendant phenyl substituents than it was in the case of systems based on bridging phenyl groups. The degradation of the methyl methacrylate group was relatively efficient, with about half of the initial ligands dissociated upon exposure. Our data reveal that the such dissociation can produce different outcomes, depending on the structural configuration. While all the organic groups were expected to detach and desorb from the resist in their entirety, a sizeable amount of them remain and form undesired byproducts such as alkene chains. In the framework of the materials synthesis and engineering through specific building blocks, these results provide a deeper insight into the photochemistry of resists, in particular for extreme ultraviolet lithography.
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Submitted 26 September, 2018;
originally announced September 2018.
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Lithographic performance of ZEP520A and mr-PosEBR resists exposed by electron beam and extreme ultraviolet lithography
Authors:
Roberto Fallica,
Dimitrios Kazazis,
Robert Kirchner,
Anja Voigt,
Iacopo Mochi,
Helmut Schift,
Yasin Ekinci
Abstract:
Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high et…
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Pattern transfer by deep anisotropic etch is a well-established technique for fabrication of nanoscale devices and structures. For this technique to be effective, the resist material plays a key role and must have high resolution, reasonable sensitivity and high etch selectivity against the conventional silicon substrate or underlayer film. In this work, the lithographic performance of two high etch resistance materials was evaluated: ZEP520A (Nippon Zeon Co.) and mr-PosEBR (micro resist technology GmbH). Both materials are positive tone, polymer-based and non-chemically amplified resists. Two exposure techniques were used: electron beam lithography (EBL) and extreme ultraviolet (EUV) lithography. These resists were originally designed for EBL patterning, where high quality patterning at sub-100 nm resolution was previously demonstrated. In the scope of this work, we also aim to validate their extendibility to EUV for high resolution and large area patterning. To this purpose, the same EBL process conditions were employed at EUV. The figures of merit, i.e. dose to clear, dose to size, and resolution, were extracted and these results are discussed systematically. It was found that both materials are very fast at EUV (dose to clear lower than 12 mJ/cm2) and are capable of resolving dense lines/space arrays with a resolution of 25 nm half-pitch. The quality of patterns was also very good and the sidewall roughness was below 6 nm. Interestingly, the general-purpose process used for EBL can be extended straightforwardly to EUV lithography with comparable high quality and yield. Our findings open new possibilities for lithographers who wish to devise novel fabrication schemes exploiting EUV for fabrication of nanostructures by deep etch pattern transfer.
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Submitted 24 October, 2017;
originally announced October 2017.
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A comparative study of resists and lithographic tools using the Lumped Parameter Model
Authors:
Roberto Fallica,
Robert Kirchner,
Dominique Mailly,
Yasin Ekinci
Abstract:
A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are processed under the same conditions. The dose-to-clear and the lithographic contrast are determined experimentally and are used to compare the relative efficiency…
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A comparison of the performance of high resolution lithographic tools is presented here. We use extreme ultraviolet interference lithography, electron beam lithography, and He ion beam lithography tools on two different resists that are processed under the same conditions. The dose-to-clear and the lithographic contrast are determined experimentally and are used to compare the relative efficiency of each tool. The results are compared to previous studies and interpreted in the light of each tool-specific secondary electron yield. In addition, the patterning performance is studied by exposing dense line/spaces patterns and the relation between critical dimension and exposure dose is discussed. Finally, the Lumped Parameter Model is employed in order to quantitatively estimate the critical dimension of line/spaces, using each tool specific aerial image. Our implementation is then validated by fitting the model to the experimental data from interference lithography exposures, and extracting the resist contrast.
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Submitted 22 March, 2017;
originally announced March 2017.
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Magnetic metamaterials in the blue range using aluminum nanostructures
Authors:
Yogesh Jeyaram,
Shankar K. Jha,
Mario Agio,
Jörg F. Löffler,
Yasin Ekinci
Abstract:
We report an experimental and theoretical study of the optical properties of two-dimensional arrays of aluminum nanoparticle in-tandem pairs. Plasmon resonances and effective optical constants of these structures are investigated and strong magnetic response as well as negative permeability are observed down to 400 nm wavelength. Theoretical calculations based on the finite-difference time-domai…
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We report an experimental and theoretical study of the optical properties of two-dimensional arrays of aluminum nanoparticle in-tandem pairs. Plasmon resonances and effective optical constants of these structures are investigated and strong magnetic response as well as negative permeability are observed down to 400 nm wavelength. Theoretical calculations based on the finite-difference time-domain method are performed for various particle dimensions and lattice parameters, and are found to be in good agreement with the experimental results. The results show that metamaterials operating across the whole visible wavelength range are feasible.
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Submitted 23 November, 2009;
originally announced November 2009.
