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Spontaneous charge carrier localization in extended one-dimensional systems
Authors:
Vojtěch Vlček,
Helen R. Eisenberg,
Gerd Steinle-Neumann,
Daniel Neuhauser,
Eran Rabani,
Roi Baer
Abstract:
Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally-tuned range-separated dens…
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Charge carrier localization in extended atomic systems has been described previously as being driven by disorder, point defects or distortions of the ionic lattice. Here we show for the first time by means of first-principles computations that charge carriers can spontaneously localize due to a purely electronic effect in otherwise perfectly ordered structures. Optimally-tuned range-separated density functional theory and many-body perturbation calculations within the GW approximation reveal that in trans-polyacetylene and polythiophene the hole density localizes on a length scale of several nanometers. This is due to exchange-induced translational symmetry breaking of the charge density. Ionization potentials, optical absorption peaks, excitonic binding energies and the optimally-tuned range parameter itself all become independent of polymer length as it exceeds the critical localization scale. Moreover, lattice disorder and the formation of a polaron result from the charge localization in contrast to the traditional view that lattice distortions precede charge localization. Our results can explain experimental findings that polarons in conjugated polymers form instantaneously after exposure to ultrafast light pulses.
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Submitted 12 January, 2016; v1 submitted 17 September, 2015;
originally announced September 2015.
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Deviations from piecewise linearity in the solid-state limit with approximate density functionals
Authors:
Vojtěch Vlček,
Helen R. Eisenberg,
Gerd Steinle-Neumann,
Leeor Kronik,
Roi Baer
Abstract:
In exact density functional theory (DFT) the total ground-state energy is a series of linear segments between integer electron points, a condition known as "piecewise linearity". Deviation from this condition is indicative of poor predictive capabilities for electronic structure, in particular of ionization energies, fundamental gaps, and charge transfer. In this article, we take a new look at the…
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In exact density functional theory (DFT) the total ground-state energy is a series of linear segments between integer electron points, a condition known as "piecewise linearity". Deviation from this condition is indicative of poor predictive capabilities for electronic structure, in particular of ionization energies, fundamental gaps, and charge transfer. In this article, we take a new look at the deviation from linearity (i.e., curvature) in the solid-state limit by considering two different ways of approaching it: a large finite system of increasing size and a crystal represented by an increasingly large reference cell with periodic boundary conditions. We show that the curvature approaches vanishing values in both limits, even for functionals which yield poor predictions of electronic structure, and therefore can not be used as a diagnostic or constructive tool in solids. We find that the approach towards zero curvature is different in each of the two limits, owing to the presence of a compensating background charge in the periodic case. Based on these findings, we present a new criterion for functional construction and evaluation, derived from the size-dependence of the curvature, along with a practical method for evaluating this criterion. For large finite systems we further show that the curvature is dominated by the self-interaction of the highest occupied eigenstate. These findings are illustrated by computational studies of various solids, semiconductor nanocrystals, and long alkane chains.
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Submitted 16 September, 2014;
originally announced September 2014.
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A new generalized Kohn-Sham method for fundamental band-gaps in solids
Authors:
Helen R. Eisenberg,
Roi Baer
Abstract:
We developed a method for calculating solid-state ground-state properties and fundamental band-gaps using a generalized Kohn-Sham approach combining a local density approximation (LDA) functional with a long-range explicit exchange orbital functional. We found that when the range parameter is selected according to the formula γ=A/(\eps_\inf - \eps_\tilde) where \eps_\inf is the optical dielectri…
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We developed a method for calculating solid-state ground-state properties and fundamental band-gaps using a generalized Kohn-Sham approach combining a local density approximation (LDA) functional with a long-range explicit exchange orbital functional. We found that when the range parameter is selected according to the formula γ=A/(\eps_\inf - \eps_\tilde) where \eps_\inf is the optical dielectric constant of the solid and \eps_\tilde= 0.84 and A= 0.216a0^(-1), predictions of the fundamental band-gap close to the experimental values are obtained for a variety of solids of different types. For most solids the range parameter γis small (i.e. explicit exchange is needed only at long distances) so the predicted values for lattice constants and bulk modulii are similar to those based on conventional LDA calculations.
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Submitted 23 March, 2009;
originally announced March 2009.
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The formation, ripening and stability of epitaxially strained island arrays
Authors:
Helen R. Eisenberg,
Daniel Kandel
Abstract:
We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed, with an island density which increases with film thickness. Under deposition, an island shape transition occurs, which leads to a bimodal island size distribu…
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We study the formation and evolution of coherent islands on lattice mismatched epitaxially strained films. Faceted islands form in films with aniostropic surface tension. Under annealing, these islands ripen until a stable array is formed, with an island density which increases with film thickness. Under deposition, an island shape transition occurs, which leads to a bimodal island size distribution. In films with isotropic surface tension we observe continual ripening of islands above a certain film thickness. A stable wavy morphology is found in thinner films.
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Submitted 12 November, 2002;
originally announced November 2002.
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Wetting layer thickness and early evolution of epitaxially strained thin films
Authors:
Helen R. Eisenberg,
Daniel kandel
Abstract:
We propose a physical model which explains the existence of finite thickness wetting layers in epitaxially strained films. The finite wetting layer is shown to be stable due to the variation of the non-linear elastic free energy with film thickness. We show that anisotropic surface tension gives rise to a metastable enlarged wetting layer. The perturbation amplitude needed to destabilize this we…
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We propose a physical model which explains the existence of finite thickness wetting layers in epitaxially strained films. The finite wetting layer is shown to be stable due to the variation of the non-linear elastic free energy with film thickness. We show that anisotropic surface tension gives rise to a metastable enlarged wetting layer. The perturbation amplitude needed to destabilize this wetting layer decreases with increasing lattice mismatch. We observe the development of faceted islands in unstable films.
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Submitted 13 July, 2000; v1 submitted 20 October, 1999;
originally announced October 1999.
