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Gate-Tunable Transmon Using Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
M. Eichinger,
L. O. Andersen,
D. M. T. van Zanten,
S. Kallatt,
P. Scarlino,
A. Kringhøj,
J. M. Chavez-Garcia,
G. C. Gardner,
S. Gronin,
M. J. Manfra,
A. Gyenis,
M. Kjaergaard,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and reado…
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We present a gate-voltage tunable transmon qubit (gatemon) based on planar InAs nanowires that are selectively grown on a high resistivity silicon substrate using III-V buffer layers. We show that low loss superconducting resonators with an internal quality of $2\times 10^5$ can readily be realized using these substrates after the removal of buffer layers. We demonstrate coherent control and readout of a gatemon device with a relaxation time, $T_{1}\approx 700\,\mathrm{ns}$, and dephasing times, $T_2^{\ast}\approx 20\,\mathrm{ns}$ and $T_{\mathrm{2,echo}} \approx 1.3\,\mathrm{μs}$. Further, we infer a high junction transparency of $0.4 - 0.9$ from an analysis of the qubit anharmonicity.
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Submitted 22 February, 2022;
originally announced February 2022.
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Electrical Properties of Selective-Area-Grown Superconductor-Semiconductor Hybrid Structures on Silicon
Authors:
A. Hertel,
L. O. Andersen,
D. M. T. van Zanten,
M. Eichinger,
P. Scarlino,
S. Yadav,
J. Karthik,
S. Gronin,
G. C. Gardner,
M. J. Manfra,
C. M. Marcus,
K. D. Petersson
Abstract:
We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high aver…
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We present a superconductor-semiconductor material system that is both scalable and monolithically integrated on a silicon substrate. It uses selective area growth of Al-InAs hybrid structures on a planar III-V buffer layer, grown directly on a high resistivity silicon substrate. We characterized the electrical properties of this material system at millikelvin temperatures and observed a high average field-effect mobility of $μ\approx 3200\,\mathrm{cm^2/Vs}$ for the InAs channel, and a hard induced superconducting gap. Josephson junctions exhibited a high interface transmission, $\mathcal{T} \approx 0.75 $, gate voltage tunable switching current with a product of critical current and normal state resistance, $I_{\mathrm{C}}R_{\mathrm{N}} \approx 83\,\mathrm{μV}$, and signatures of multiple Andreev reflections. These results pave the way for scalable and high coherent gate voltage tunable transmon devices and other superconductor-semiconductor hybrids fabricated directly on silicon.
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Submitted 8 April, 2021;
originally announced April 2021.
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Air tightness of hBN encapsulation and its impact on Raman spectroscopy of van der Waals materials
Authors:
Johannes Holler,
Lorenz Bauriedl,
Tobias Korn,
Andrea Seitz,
Furkan Özyigit,
Michaela Eichinger,
Christian Schüller,
Kenji Watanabe,
Takashi Taniguchi,
Christoph Strunk,
Nicola Paradiso
Abstract:
Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Wa…
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Raman spectroscopy is a precious tool for the characterization of van der Waals materials, e.g. for the determination of the layer number in thin exfoliated flakes. For sensitive materials, however, this method can be dramatically invasive. In particular, the light intensity required to obtain a significant Raman signal is sufficient to immediately photo-oxidize few-layer thick metallic van der Waals materials. In this work we investigated the impact of the environment on Raman characterization of thin NbSe$_2$ crystals. We show that in ambient conditions the flake is locally oxidized even for very low illumination intensity. On the other hand, we observe no degradation if the Raman measurements are performed either in vacuum or on fully hBN-encapsulated samples. Interestingly, we find that covering samples deposited on the usual SiO$_2$ surface only from the top is not sufficient to prevent diffusion of oxygen underneath the layers.
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Submitted 29 July, 2019;
originally announced July 2019.
