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From Text to Test: AI-Generated Control Software for Materials Science Instruments
Authors:
Davi M Fébba,
Kingsley Egbo,
William A. Callahan,
Andriy Zakutayev
Abstract:
Large language models (LLMs) are transforming the landscape of chemistry and materials science. Recent examples of LLM-accelerated experimental research include virtual assistants for parsing synthesis recipes from the literature, or using the extracted knowledge to guide synthesis and characterization. Despite these advancements, their application is constrained to labs with automated instruments…
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Large language models (LLMs) are transforming the landscape of chemistry and materials science. Recent examples of LLM-accelerated experimental research include virtual assistants for parsing synthesis recipes from the literature, or using the extracted knowledge to guide synthesis and characterization. Despite these advancements, their application is constrained to labs with automated instruments and control software, leaving much of materials science reliant on manual processes. Here, we demonstrate the rapid deployment of a Python-based control module for a Keithley 2400 electrical source measure unit using ChatGPT-4. Through iterative refinement, we achieved effective instrument management with minimal human intervention. Additionally, a user-friendly graphical user interface (GUI) was created, effectively linking all instrument controls to interactive screen elements. Finally, we integrated this AI-crafted instrument control software with a high-performance stochastic optimization algorithm to facilitate rapid and automated extraction of electronic device parameters related to semiconductor charge transport mechanisms from current-voltage (IV) measurement data. This integration resulted in a comprehensive open-source toolkit for semiconductor device characterization and analysis using IV curve measurements. We demonstrate the application of these tools by acquiring, analyzing, and parameterizing IV data from a Pt/Cr$_2$O$_3$:Mg/$β$-Ga$_2$O$_3$ heterojunction diode, a novel stack for high-power and high-temperature electronic devices. This approach underscores the powerful synergy between LLMs and the development of instruments for scientific inquiry, showcasing a path for further acceleration in materials science.
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Submitted 25 June, 2024; v1 submitted 23 June, 2024;
originally announced June 2024.
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Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile suboxide: The examples of Ga and Ge
Authors:
Wenshan Chen,
Kingsley Egbo,
Huaide Zhang,
Andrea Ardenghi,
Oliver Bierwagen
Abstract:
The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of oxygen for the growth temperature calibration (by determining the adsorption temperature of the elements) and in-situ etching of oxide layers (e. g., Ga2O3 etc…
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The delivery of an elemental cation flux to the substrate surface in the oxide molecular beam epitaxy (MBE) chamber has been utilized not only for the epitaxial growth of oxide thin films in the presence of oxygen but also in the absence of oxygen for the growth temperature calibration (by determining the adsorption temperature of the elements) and in-situ etching of oxide layers (e. g., Ga2O3 etched by Ga). These elemental fluxes may, however, leave unwanted cation adsorbates or droplets on the surface, which traditionally require removal by in-situ superheating or ex-situ wet-chemical etching with potentially surface-degrading effects. This study demonstrates a universal in-situ approach to remove the residual cation elements from the surface via conversion into a volatile suboxide by a molecular O2-flux in an MBE system followed by suboxide evaporation at temperatures significantly below the elemental evaporation temperature. We experimentally investigate the in-situ etching of Ga and Ge cation layers and their etching efficiency using in-situ line-of-sight quadrupole mass spectrometry (QMS) and reflection high-energy electron diffraction (RHEED). The application of this process is demonstrated by the in-situ removal of residual Ga droplets from a SiO2 mask after structuring a Ga2O3 layer by in-situ Ga-etching. This approach can be generally applied in MBE and MOCVD to remove residual elements with vapor pressure lower than that of their suboxides, such as B, In, La, Si, Sn, Sb, Mo, Nb, Ru, Ta, V, and W.
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Submitted 14 January, 2024;
originally announced January 2024.
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Reliable operation of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at 600$^\circ$C
Authors:
William A. Callahan,
Kingsley Egbo,
Cheng-Wei Lee,
David Ginley,
Ryan O'Hayre,
Andriy Zakutayev
Abstract:
$β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$-based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applications in power electronic devices and harsh-environment sensors. However, the long-term reliability of these ultra-wide band gap (UWBG) semiconductor devices remains barely addressed and may be strongly influenced by chemical reactions at the p-n heterojunction interface. Here, we experimentally demonstrate operation and evaluate the reliability of Cr$_2$O$_3$:Mg/ $β$-Ga$_2$O$_3$ p-n heterojunction diodes at during extended operation at 600$^\circ$C, as well as after 30 repeated cycles between 25-550$^\circ$C. The calculated pO2-temperature phase stability diagram of the Ga-Cr-O material system predicts that Ga$_2$O$_3$ and Cr$_2$O$_3$ should remain thermodynamically stable in contact with each other over a wide range of oxygen pressures and operating temperatures. The fabricated Cr$_2$O$_3$:Mg / $β$-Ga$_2$O$_3$ p-n heterojunction diodes show room-temperature on/off ratios >10$^4$ at $\pm$5V and a breakdown voltage (V$_{Br}$) of -390V. The leakage current increases with increasing temperature up to 600$^\circ$C, which is attributed to Poole-Frenkel emission with a trap barrier height of 0.19 eV. Over the course of a 140-hour thermal soak at 600$^\circ$C, both the device turn-on voltage and on-state resistance increase from 1.08V and 5.34 m$Ω$-cm$^2$ to 1.59V and 7.1 m$Ω$-cm$^2$ respectively. This increase is attributed to the accumulation of Mg and MgO at the Cr$_2$O$_3$/Ga$_2$O$_3$ interface as observed from TOF-SIMS analysis. These findings inform future design strategies of UWBG semiconductor devices for harsh environment operation and underscore the need for further reliability assessments for $β$-Ga$_2$O$_3$ based devices.
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Submitted 13 January, 2024;
originally announced January 2024.
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NiGa$_{2}$O$_{4}$ interfacial layers in NiO/Ga$_{2}$O$_{3}$ heterojunction diodes at high temperature
Authors:
Kingsley Egbo,
Emily M. Garrity,
William A. Callahan,
Chris Chae,
Cheng-Wei Lee,
Brooks Tellekamp,
**woo Hwang,
Vladan Stevanovic,
Andriy Zakutayev
Abstract:
NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at…
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NiO/Ga$_{2}$O$_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we report on the time evolution of the static electrical properties in the widely studied p-NiO/n-Ga$_{2}$O$_{3}$heterojunction diodes and the formation of NiGa$_{2}$O$_{4}$ interfacial layers when operated at $550^{\circ}$C. Results of our thermal cycling experiment show an initial leakage current increase which stabilizes after sustained thermal load, due to reactions at the NiO-Ga$_{2}$O$_{3}$ interface. High-resolution TEM microstructure analysis of the devices after thermal cycling indicates that the NiO-Ga$_{2}$O$_{3}$ interface forms ternary compounds at high temperatures, and thermodynamic calculations suggest the formation of the spinel NiGa$_{2}$O$_{4}$ layer between NiO and Ga$_{2}$O$_{3}$. First-principles defect calculations find that NiGa$_{2}$O$_{4}$ shows low p-type intrinsic do**, and hence can also serve to limit electric field crowding at the interface. Vertical NiO/Ga$_{2}$O$_{3}$ diodes with intentionally grown 5 nm thin spinel-type NiGa$_{2}$O$_{4}$ interfacial layers show excellent device ON/OFF ratio of > 10$^{10}$($\pm$3 V), V$_{ON}$ of ~1.9 V, and breakdown voltage of ~ 1.2 kV for an initial unoptimized 300-micron diameter device. These p-n heterojunction diodes are promising for high-voltage, high-temperature applications.
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Submitted 12 January, 2024;
originally announced January 2024.
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Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys
Authors:
Stephen Schaefer,
Davi Febba,
Kingsley Egbo,
Glenn Teeter,
Andriy Zakutayev,
Brooks Tellekamp
Abstract:
Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking optimization of synthesis conditions and slow experimental iteration rates. Here we report on high-throughput molecular beam epitaxy with rapid screening of synthe…
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Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such ultimate quality usually comes at the cost of painstaking optimization of synthesis conditions and slow experimental iteration rates. Here we report on high-throughput molecular beam epitaxy with rapid screening of synthesis conditions using a novel cyclical growth and in-situ etch method. This novel approach leverages sub-oxide desorption present during molecular beam epitaxy and as such should be broadly applicable to other material systems. As a proof of concept, this method is applied to rapidly investigate the growth space for the ternary alloy (InxGa1-x)2O3 on (010) oriented beta-Ga2O3 substrates using in-situ reflection high energy electron diffraction measurements. Two distinct growth regimes are identified and analyzed using machine learning image recognition algorithms, the first stabilizing a streaky 2x surface reconstruction typical of In-catalyzed beta-Ga2O3 growth, and the second exhibiting a spotty/faceted pattern typical of phase separation. Targeted growth of (InxGa1-x)2O3 is performed under conditions near the boundary of the two regimes resulting in a 980 nm thick epitaxial layer with In mole fraction up to 5.6%. The cyclical growth/etch method retains the ~1 nm surface roughness of the single crystal substrate, increases experimental throughput approximately 6x, and improves single crystal substrate utilization by >40x. The high-throughput MBE method enables rapid discovery of growth regimes for ultra-wide bandgap oxide alloys for power conversion devices operating with high efficiency at high voltages and temperatures, as well as optical devices such as ultraviolet photodetectors.
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Submitted 12 January, 2024;
originally announced January 2024.
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In-situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge
Authors:
Wenshan Chen,
Kingsley Egbo,
Hans Tornatzky,
Manfred Ramsteiner,
Markus R. Wagner,
Oliver Bierwagen
Abstract:
Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO…
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Rutile GeO2 has been predicted to be an ultra-wide bandgap semiconductor suitable for future power electronics devices while quartz-like GeO2 shows piezoelectric properties. To explore these crystalline phases for application and fundamental materials investigations, molecular beam epitaxy (MBE) is a well-suited thin film growth technique. In this study, we investigate the reaction kinetics of GeO2 during plasma-assisted MBE using elemental Ge and plasma-activated oxygen fluxes. The growth rate as a function of oxygen flux is measured in-situ by laser reflectometry at different growth temperatures. A flux of the suboxide GeO desorbing off the growth surface is identified and quantified in-situ by the line-of-sight quadrupole mass spectrometry. Our measurements reveal that the suboxide formation and desorption limits the growth rate under metal-rich or high temperature growth conditions, and leads to etching of the grown GeO2 layer under Ge flux in the absence of oxygen. The quantitative results fit the sub-compound mediated reaction model, indicating the intermediate formation of the suboxide at the growth front. This model is further utilized to delineate the GeO2-growth window in terms of oxygen-flux and substrate temperature. Our study can serve as a guidance for the thin film synthesis of GeO2 and defect-free mesa etching in future GeO2-device processing.
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Submitted 27 April, 2023; v1 submitted 21 April, 2023;
originally announced April 2023.
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Acceptor and compensating donor do** of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing
Authors:
Kingsley Egbo,
Jonas Lähnemann,
Andreas Falkenstein,
Joel Varley,
Oliver Bierwagen
Abstract:
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to $2\times10^{21}$cm$^{-3}$. In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at $1.2\times10^{21}$cm$^{-3}$…
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(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to $2\times10^{21}$cm$^{-3}$. In this concentration range, the incorporation of Ga into SnO was limited by the formation of secondary phases observed at $1.2\times10^{21}$cm$^{-3}$ Ga, while the incorporation of La showed a lower solubility limit. Transport measurements on the doped samples reveal that Ga acts as an acceptor and La as a compensating donor. While Ga do** led to an increase of the hole concentration from $1\times10^{18}$cm$^{-3}-1\times10^{19}$cm$^{-3}$ for unintentionally (UID) SnO up to $5\times10^{19}$cm$^{-3}$, La-concentrations well in excess of the UID acceptor concentration resulted in semi-insulating films without detectable $n$-type conductivity. Ab-initio calculations qualitatively agree with our dopant assignment of Ga and La, and further predict In$_\text{Sn}$ to act as an acceptor as well as Al$_\text{Sn}$ and B$_\text{Sn}$ as donor. These results show the possibilities of controlling the hole concentration in $p$-type SnO, which can be useful for a range of optoelectronic and gas-sensing applications.
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Submitted 12 December, 2022;
originally announced December 2022.
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Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy
Authors:
Kingsley Egbo,
Esperanza Luna,
Jonas Lähnemann,
Georg Hoffmann,
Achim Trampert,
Jona Grümbel,
Elias Kluth,
Martin Feneberg,
Rüdiger Goldhahn,
Oliver Bierwagen
Abstract:
By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn o…
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By employing a mixed SnO$_2$+Sn source, we demonstrate suboxide molecular beam epitaxy growth of phase-pure single crystalline metastable SnO(001) thin films at a growth rate of ~1.0nm/min without the need for additional oxygen. These films grow epitaxially across a wide substrate temperature range from 150 to 450°C. Hence, we present an alternative pathway to overcome the limitations of high Sn or SnO$_2$ cell temperatures and narrow growth windows encountered in previous MBE growth of metastable SnO. In-situ laser reflectometry and line-of-sight quadrupole mass spectrometry were used to investigate the rate of SnO desorption as a function of substrate temperature. While SnO ad-molecules desorption at Ts = 450°C was growth-rate limiting,the SnO films did not desorb at this temperature after growth in vacuum. The SnO (001) thin films are transparent and unintentionally p-type doped, with hole concentrations and mobilities in the range of 0.9 to 6.0x10$^{18}$cm$^{-3}$ and 2.0 to 5.5 cm$^2$/V.s, respectively. These p-type SnO films obtained at low temperatures are promising for back-end-of-line (BEOL) compatible applications and for integration with n-type oxides in p-n heterojunction and field-effect transistors
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Submitted 23 September, 2022;
originally announced September 2022.
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Vacancy defects induced changes in the electronic and optical properties of NiO studied by spectroscopic ellipsometry and first-principles calculations
Authors:
Kingsley O. Egbo,
Chao ** Liu,
Chinedu E. Ekuma,
Kin Man Yu
Abstract:
Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and…
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Native defects in semiconductors play an important role in their optoelectronic properties. Nickel oxide (NiO) is one of the few wide-gap p-type oxide semiconductors and its conductivity is believed to be controlled primarily by Ni-vacancy acceptors. Herein, we present a systematic study comparing the optoelectronic properties of stoichiometric NiO, oxygen-rich NiO with Ni vacancies (NiO:VNi), and Ni-rich NiO with O vacancies (NiO:VO). The optical properties were obtained by spectroscopic ellipsometry, while valence band spectra were probed by high-resolution x-ray photoelectron spectroscopy. The experimental results are directly compared to first-principles density functional theory + U calculations. Computational results confirm that gap states are present in both NiO systems with vacancies. Gap states in NiO:Vo are predominantly Ni 3d states, while those in NiO:VNi are composed of both Ni 3d and O 2p states. The absorption spectra of the NiO:VNi sample show significant defect-induced features below 3.0 eV compared to NiO and NiO:VO samples. The increase in sub-gap absorptions in NiO:VNi can be attributed to gap states observed in the electronic density of states. The relation between native vacancy defects and electronic and optical properties of NiO are demonstrated, showing that at similar vacancy concentration, the optical constants of NiO:VNi deviate significantly from those of NiO:VO. Our experimental and computational results reveal that although VNi are effective acceptors in NiO, they also degrade the visible transparency of the material. Hence, for transparent optoelectronic device applications, an optimization of native VNi defects with extrinsic do** is required to simultaneously enhance p-type conductivity and transparency.
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Submitted 7 October, 2020;
originally announced October 2020.
