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Stimulated quantum phase slips from weak electromagnetic radiations in superconducting nanowires
Authors:
Amir Jafari-Salim,
Amin Eftekharian,
A. Hamed Majedi,
Mohammad H. Ansari
Abstract:
We study the rate of quantum phase slips in an ultranarrow superconducting nanowire exposed to weak electromagnetic radiations. The superconductor is in the dirty limit close to the superconducting-insulating transition, where fluxoids move in strong dissipation. We use a semiclassical approach and show that external radiation stimulates a significant enhancement in the probability of quantum phas…
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We study the rate of quantum phase slips in an ultranarrow superconducting nanowire exposed to weak electromagnetic radiations. The superconductor is in the dirty limit close to the superconducting-insulating transition, where fluxoids move in strong dissipation. We use a semiclassical approach and show that external radiation stimulates a significant enhancement in the probability of quantum phase slips. This can help to outline a new type of detector for microwave to submillimetre radiations based on stimulated quantum phase slip phenomenon.
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Submitted 9 July, 2015;
originally announced July 2015.
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Superconducting Nanowire Single Photon Detector on Diamond
Authors:
Haig A. Atikian,
Amin Eftekharian,
A. Jafari Salim,
Michael J. Burek,
Jennifer T. Choy,
A. Hamed Majedi,
Marko Loncar
Abstract:
Superconducting nanowire single photon detectors (SNSPDs) are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310nm and 632nm photons. The procedure to prepare diamond substrate surfaces suitable for the deposition and patterning of thin film superconduct…
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Superconducting nanowire single photon detectors (SNSPDs) are fabricated directly on diamond substrates and their optical and electrical properties are characterized. Dark count performance and photon count rates are measured at varying temperatures for 1310nm and 632nm photons. The procedure to prepare diamond substrate surfaces suitable for the deposition and patterning of thin film superconducting layers is reported. Using this approach, diamond substrates with less than 300pm RMS surface roughness are obtained.
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Submitted 17 January, 2014;
originally announced January 2014.
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Reduced Dark Counts in Optimized Geometries for Superconducting Nanowire Single photon Detectors
Authors:
Mohsen K. Akhlaghi,
Haig Atikian,
Amin Eftekharian,
Marko Loncar,
A. Hamed Majedi
Abstract:
We have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus with no current crowding, are observed. Furthermore, we find that the optimally designed bend significantly reduces the dark counts without compromising the photo-…
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We have experimentally compared the critical current, dark count rate and photo-response of 100nm wide superconducting nanowires with different bend designs. Enhanced critical current for nanowires with optimally rounded bends, and thus with no current crowding, are observed. Furthermore, we find that the optimally designed bend significantly reduces the dark counts without compromising the photo-response of the device. The results can lead to major improvements in superconducting nanowire single photon detectors.
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Submitted 18 May, 2012;
originally announced May 2012.
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Design of GaN White Light Emitting Diode through Envelope Function Analysis and Combined k.p-Transfer Matrix Method
Authors:
Milad Khoshnegar,
Majid Sodagar,
Amin Eftekharian,
Sina Khorasani
Abstract:
In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting periods of three single quantum wells with various well thicknesses. With the aid of 6x6 Luttinger Hamiltonian, we employ the combination of two methods, k.p per…
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In this paper, we present an envelope function analysis in order to design the emission spectra of a white quantum well light emitting diode. The nanometric heterostructure that we are dealing with is a multiple quantum well, consisting periods of three single quantum wells with various well thicknesses. With the aid of 6x6 Luttinger Hamiltonian, we employ the combination of two methods, k.p perturbation and transfer matrix method, to acquire electron and hole wavefunctions analytically. The envelope function approximation was considered to obtain these wavefunctions for a special basis set. While adjacent valence subbands have been studied exactly, the conduction bands are approximated as parabolic. The effect of Stokes shift has been also taken into account. The dipole moment matrix elements for interband atomic transitions are evaluated via correlation between electron and hole envelope functions, for both orthogonal polarizations. This has simplified the calculation of photoluminescence intensity. Spatial variations in hole/electron wavefunctions have been examined with the introduction of piezoelectric and spontaneous polarizations internal field. We theoretically establish the possibility of a highly efficient InGaN red emitter, resulting in a uniform luminescence in red, green and blue emissions from the while light emitting diode, through adjusting material composition, potential slope, and thickness.
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Submitted 17 March, 2009;
originally announced March 2009.
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Exciton-photon interaction in a quantum dot embedded in a photonic microcavity
Authors:
Majid Sodagar,
Milad Khoshnegar,
Amin Eftekharian,
Sina Khorasani
Abstract:
We present a detailed analysis of exciton-photon interaction in a microcavity made out of a photonic crystal slab. Here we have analyzed a disk-like quantum dot where an exciton is formed. Excitonic eigen-functions in addition to their eigen-energies are found through direct matrix diagonalization, while wave functions corresponding to unbound electron and hole are chosen as the basis set for th…
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We present a detailed analysis of exciton-photon interaction in a microcavity made out of a photonic crystal slab. Here we have analyzed a disk-like quantum dot where an exciton is formed. Excitonic eigen-functions in addition to their eigen-energies are found through direct matrix diagonalization, while wave functions corresponding to unbound electron and hole are chosen as the basis set for this procedure. In order to evaluate these wave functions precisely, we have used Luttinger Hamiltonian in the case of hole while ignoring bands adjacent to conduction band for electron states. After analyzing Excitonic states, a photonic crystal based microcavity with a relatively high quality factor mode has been proposed and its lattice constant has been adjusted to obtain the prescribed resonant frequency. We use finite-difference time-domain method in order to simulate our cavity with sufficient precision. Finally, we formulate the coupling constants for exciton-photon interaction both where intra-band and inter-band transitions occur. By evaluating a sample coupling constant, it has been shown that the system can be in strong coupling regime and Rabi oscillations can occur for Excitonic state population.
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Submitted 14 March, 2009; v1 submitted 25 November, 2008;
originally announced November 2008.