Showing 1–7 of 7 results for author: Edelberg, D

Using VAEs to Learn Latent Variables: Observations on Applications in cryo-EM

Authors: Daniel G. Edelberg, Roy R. Lederman

Abstract: Variational autoencoders (VAEs) are a popular generative model used to approximate distributions. The encoder part of the VAE is used in amortized learning of latent variables, producing a latent representation for data samples. Recently, VAEs have been used to characterize physical and biological systems. In this case study, we qualitatively examine the amortization properties of a VAE used in bi… ▽ More Variational autoencoders (VAEs) are a popular generative model used to approximate distributions. The encoder part of the VAE is used in amortized learning of latent variables, producing a latent representation for data samples. Recently, VAEs have been used to characterize physical and biological systems. In this case study, we qualitatively examine the amortization properties of a VAE used in biological applications. We find that in this application the encoder bears a qualitative resemblance to more traditional explicit representation of latent variables. △ Less

Submitted 10 May, 2023; v1 submitted 13 March, 2023; originally announced March 2023.

Tunable strain soliton networks confine electrons in Van der Waals materials

Authors: Drew Edelberg, Hemant Kumar, Vivek Shenoy, Héctor Ochoa, Abhay N. Pasupathy

Abstract: Sliding and twisting van der Waals layers with respect to each other gives rise to moiré structures with emergent electronic properties. Electrons in these moiré structures feel weak potentials that are typically in the tens of millielectronvolt range when the moiré structures are smooth at the atomic scale. Here we report a facile technique to achieve deep, deterministic trap** potentials via s… ▽ More Sliding and twisting van der Waals layers with respect to each other gives rise to moiré structures with emergent electronic properties. Electrons in these moiré structures feel weak potentials that are typically in the tens of millielectronvolt range when the moiré structures are smooth at the atomic scale. Here we report a facile technique to achieve deep, deterministic trap** potentials via strain-based moiré engineering in van der Waals bilayers. We use elasto-scanning tunneling microscopy to show that uniaxial strain drives a commensurate-incommensurate lattice transition in a multilayer MoSe$_2$ system. In the incommensurate state, the top monolayer is partially detached from the bulk through the spontaneous formation of topological solitons where stress is relieved. Intersecting solitons form a honeycomb-like network resulting from the three-fold symmetry of the adhesion potential between layers. The vertices of the honeycomb network occur in bound pairs with different interlayer stacking arrangements. One vertex of the pair is found to be an efficient trap for electrons, displaying two states that are deeply confined within the semiconductor gap and have a spatial extent of 2 nm. Honeycomb soliton networks thus provide a unique path to engineer an array of identical deeply confined states with a strain-dependent tunable spatial separation, without the necessity of introducing chemical defects into the host materials. △ Less

Submitted 30 October, 2019; originally announced October 2019.

Comments: 4 figures + supplementary material

Hundredfold Enhancement of Light Emission via Defect Control in Monolayer Transition-Metal Dichalcogenides

Authors: D. Edelberg, D. Rhodes, A. Kerelsky, B. Kim, J. Wang, A. Zangiabadi, C. Kim, A. Abhinandan, J. Ardelean, M. Scully, D. Scullion, L. Embon, I. Zhang, R. Zu, Elton J. G. Santos, L. Balicas, C. Marianetti, K. Barmak, X. -Y. Zhu, J. Hone, A. N. Pasupathy

Abstract: Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transpo… ▽ More Two dimensional (2D) transition-metal dichalcogenide (TMD) based semiconductors have generated intense recent interest due to their novel optical and electronic properties, and potential for applications. In this work, we characterize the atomic and electronic nature of intrinsic point defects found in single crystals of these materials synthesized by two different methods - chemical vapor transport and self-flux growth. Using a combination of scanning tunneling microscopy (STM) and scanning transmission electron microscopy (STEM), we show that the two major intrinsic defects in these materials are metal vacancies and chalcogen antisites. We show that by control of the synthetic conditions, we can reduce the defect concentration from above $10^{13} /cm^2$ to below $10^{11} /cm^2$. Because these point defects act as centers for non-radiative recombination of excitons, this improvement in material quality leads to a hundred-fold increase in the radiative recombination efficiency. △ Less

Submitted 30 April, 2018; originally announced May 2018.

Journal ref: Nano Lett. 2019, 19, 7, 4371-4379

Temperature-Driven Topological Transition in 1T'-MoTe2

Authors: Ayelet Notis Berger, Erick Andrade, Alex Kerelsky, Drew Edelberg, Jian Li, Zhijun Wang, Lunyong Zhang, Jaewook Kim, Nader Zaki, Jose Avila, Chaoyu Chen, Maria C Asensio, Sang-Wook Cheong, Bogdan A. Bernevig, Abhay N. Pasupathy

Abstract: The topology of Weyl semimetals requires the existence of unique surface states. Surface states have been visualized in spectroscopy measurements, but their connection to the topological character of the material remains largely unexplored. 1T'-MoTe2, presents a unique opportunity to study this connection. This material undergoes a phase transition at 240K that changes the structure from orthorhom… ▽ More The topology of Weyl semimetals requires the existence of unique surface states. Surface states have been visualized in spectroscopy measurements, but their connection to the topological character of the material remains largely unexplored. 1T'-MoTe2, presents a unique opportunity to study this connection. This material undergoes a phase transition at 240K that changes the structure from orthorhombic (putative Weyl semimetal) to monoclinic (trivial metal), while largely maintaining its bulk electronic structure. Here we show from temperature-dependent quasiparticle interference measurements that this structural transition also acts as a topological switch for surface states in 1T'-MoTe2. At low temperature, we observe strong quasiparticle scattering, consistent with theoretical predictions and photoemission measurements for the surface states in this material. In contrast, measurements performed at room temperature show the complete absence of the scattering wavevectors associated with the trivial surface states. These distinct quasiparticle scattering behaviors show that 1T'-MoTe2 is ideal for separating topological and trivial electronic phenomena via temperature dependent measurements. △ Less

Submitted 18 December, 2017; originally announced December 2017.

Magnetism in Semiconducting Molybdenum Dichalcogenides

Authors: Z. Guguchia, A. Kerelsky, D. Edelberg, S. Banerjee, F. von Rohr, D. Scullion, M. Augustin, M. Scully, D. A. Rhodes, Z. Shermadini, H. Luetkens, A. Shengelaya, C. Baines, E. Morenzoni, A. Amato, J. C. Hone, R. Khasanov, S. J. L. Billinge, E. Santos, A. N. Pasupathy, Y. J. Uemura

Abstract: Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tun… ▽ More Transition metal dichalcogenides (TMDs) are interesting for understanding fundamental physics of two-dimensional materials (2D) as well as for many emerging technologies, including spin electronics. Here, we report the discovery of long-range magnetic order below TM = 40 K and 100 K in bulk semiconducting TMDs 2H-MoTe2 and 2H-MoSe2, respectively, by means of muon spin-rotation (muSR), scanning tunneling microscopy (STM), as well as density functional theory (DFT) calculations. The muon spin rotation measurements show the presence of a large and homogeneous internal magnetic fields at low temperatures in both compounds indicative of long-range magnetic order. DFT calculations show that this magnetism is promoted by the presence of defects in the crystal. The STM measurements show that the vast majority of defects in these materials are metal vacancies and chalcogen-metal antisites which are randomly distributed in the lattice at the sub-percent level. DFT indicates that the antisite defects are magnetic with a magnetic moment in the range of 0.9-2.8 mu_B. Further, we find that the magnetic order stabilized in 2H-MoTe2 and 2H-MoSe2 is highly sensitive to hydrostatic pressure. These observations establish 2H-MoTe2 and 2H-MoSe2 as a new class of magnetic semiconductors and opens a path to studying the interplay of 2D physics and magnetism in these interesting semiconductors. △ Less

Submitted 20 November, 2017; v1 submitted 14 November, 2017; originally announced November 2017.

Comments: 13 pages, 10 Figures

Journal ref: Science Advances 4 (12), eaat3672 (2018)

Absence of a Band Gap at Interface of a Metal and Highly Doped Monolayer $MoS_2$

Authors: Alexander Kerelsky, Ankur Nipane, Drew Edelberg, Dennis Wang, Xiaodong Zhou, Abdollah Motmaendadgar, Hui Gao, Saien Xie, Kibum Kang, Jiwoong Park, James Teherani, Abhay Pasupathy

Abstract: High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite extensive experimental and theoretical efforts reliable ohmic contact to doped TMDCs remains elusive and would benefit from a better understanding of the underly… ▽ More High quality electrical contact to semiconducting transition metal dichalcogenides (TMDCs) such as $MoS_2$ is key to unlocking their unique electronic and optoelectronic properties for fundamental research and device applications. Despite extensive experimental and theoretical efforts reliable ohmic contact to doped TMDCs remains elusive and would benefit from a better understanding of the underlying physics of the metal-TMDC interface. Here we present measurements of the atomic-scale energy band diagram of junctions between various metals and heavily doped monolayer $MoS_2$ using ultra-high vacuum scanning tunneling microscopy (UHV-STM). Our measurements reveal that the electronic properties of these junctions are dominated by 2D metal induced gap states (MIGS). These MIGS are characterized by a spatially growing measured gap in the local density of states (L-DOS) of the $MoS_2$ within 2 nm of the metal-semiconductor interface. Their decay lengths extend from a minimum of ~0.55 nm near mid gap to as long as 2 nm near the band edges and are nearly identical for Au, Pd and graphite contacts, indicating that it is a universal property of the monolayer semiconductor. Our findings indicate that even in heavily doped semiconductors, the presence of MIGS sets the ultimate limit for electrical contact. △ Less

Submitted 16 October, 2017; v1 submitted 23 May, 2017; originally announced May 2017.

Engineering the structural and electronic phases of MoTe2 through W substitution

Authors: D. Rhodes, D. A. Chenet, B. E. Janicek, C. Nyby, Y. Lin, W. **, D. Edelberg, E. Mannebach, N. Finney, A. Antony, T. Schiros, T. Klarr, A. Mazzoni, M. Chin, Y. -c Chiu, W. Zheng, Q. R. Zhang, F. Ernst, J. I. Dadap, X. Tong, J. Ma, R. Lou, S. Wang, T. Qian, H. Ding , et al. (8 additional authors not shown)

Abstract: MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted t… ▽ More MoTe$_2$ is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic $2H-$phase, the semimetallic $1T^{\prime}$ monoclinic phase, and the semimetallic orthorhombic $T_d$ structure. The $2H-$phase displays a band gap of $\sim 1$ eV making it appealing for flexible and transparent optoelectronics. The $T_d-$phase is predicted to possess unique topological properties which might lead to topologically protected non-dissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical do**, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound, might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe$_2$ through W substitution by unveiling the phase-diagram of the Mo$_{1-x}$W$_x$Te$_2$ solid solution which displays a semiconducting to semimetallic transition as a function of $x$. We find that only $\sim 8$ \% of W stabilizes the $T_d-$phase at room temperature. Photoemission spectroscopy, indicates that this phase possesses a Fermi surface akin to that of WTe$_2$. △ Less

Submitted 8 October, 2016; originally announced October 2016.

Comments: 10 paged, 5 pages, supplementary information not included

Journal ref: Nano Letters, 17, 1616 (2017)