Showing 1–48 of 48 results for author: Eda, G

Tunable ultrastrong magnon magnon coupling and spin Hall magnetoresistance in a van der Waals antiferromagnet

Authors: C. W. F. Freeman, Z. Xue, A. K. Budniak, H. De Libero, T. Thomson, M. Bosman, G. Eda, H. Kurebayashi, M. Cubukcu

Abstract: Antiferromagnetic (AFM) magnons and the manipulation of magnetisation via spin currents in van der Waals (vdW) materials offer substantial potential for applications in magnonics and spintronics. In this study, we demonstrate ultrastrong magnon-magnon coupling in the GHz regime within a vdW AFM, achieving a remarkable maximum normalised coupling strength of 0.47. Our investigation unveils the tuna… ▽ More Antiferromagnetic (AFM) magnons and the manipulation of magnetisation via spin currents in van der Waals (vdW) materials offer substantial potential for applications in magnonics and spintronics. In this study, we demonstrate ultrastrong magnon-magnon coupling in the GHz regime within a vdW AFM, achieving a remarkable maximum normalised coupling strength of 0.47. Our investigation unveils the tunability of coupling strength through temperature-dependent magnetic anisotropies. Additionally, we show the prospect for further enhancement to the deep-strong magnon-magnon coupling regime by manipulating the anisotropy. Furthermore, we report spin Hall magnetoresistance in a vdW AFM-based device and study the field and temperature dependence. These findings highlight the transformative potential of vdW AFMs in advancing the field of spin-based technologies. △ Less

Submitted 22 March, 2024; originally announced March 2024.

Spin-glass states generated in a van der Waals magnet by alkali-ion intercalation

Authors: S. Khan, E. S. Y. Aw, L. A. V. Nagle-Cocco, A. Sud, S. Ghosh, M. K. B. Subhan, Z. Xue, C. Freeman, D. Sagkovits, A. Gutierrez-Llorente, I. Verzhbitskiy, D. M. Arroo, C. W. Zollitsch, G. Eda, E. J. G. Santos, S. E. Dutton, S. T. Bramwell, C. A. Howard, H. Kurebayashi

Abstract: Tuning magnetic properties in layered van der Waals (vdW) materials has captured a significant attention due to the efficient control of ground-states by heterostructuring and external stimuli. Electron do** by electrostatic gating, interfacial charge transfer and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie tempe… ▽ More Tuning magnetic properties in layered van der Waals (vdW) materials has captured a significant attention due to the efficient control of ground-states by heterostructuring and external stimuli. Electron do** by electrostatic gating, interfacial charge transfer and intercalation is particularly effective in manipulating the exchange and spin-orbit properties, resulting in a control of Curie temperature ($T_{\text{C}}$) and magnetic anisotropy. Here, we discover an uncharted role of intercalation to generate magnetic frustration. As a model study, we intercalate Na atoms into the vdW gaps of pristine Cr$_2$Ge$_2$Te$_6$ (CGT) where generated magnetic frustration leads to emerging spin-glass states coexisting with a ferromagnetic order. A series of dynamic magnetic susceptibility measurements/analysis confirms the formation of magnetic clusters representing slow dynamics with a distribution of relaxation times. The intercalation also modifies other macroscopic physical parameters including the significant enhancement of $T_{\text{C}}$ from 66\,K to 240\,K and the switching of magnetic easy-hard axis direction. Our study identifies intercalation as a unique route to generate emerging frustrated spin states in simple vdW crystals. △ Less

Submitted 29 June, 2024; v1 submitted 29 December, 2023; originally announced December 2023.

Comments: 31 pages, 18 figures

Reply to: Mobility overestimation in MoS$_2$ transistors due to invasive voltage probes

Authors: Hong Kuan Ng, Du Xiang, Ady Suwardi, Guangwei Hu, Ke Yang, Yunshan Zhao, Tao Liu, Zhonghan Cao, Huajun Liu, Shisheng Li, **g Cao, Qiang Zhu, Zhaogang Dong, Chee Kiang Ivan Tan, Dongzhi Chi, Cheng-Wei Qiu, Kedar Hippalgaonkar, Goki Eda, Ming Yang, **g Wu

Abstract: In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier densit… ▽ More In this reply, we include new experimental results and verify that the observed non-linearity in rippled-MoS$_2$ (leading to mobility kink) is an intrinsic property of a disordered system, rather than contact effects (invasive probes) or other device issues. Noting that Peng Wu's hypothesis is based on a highly ordered ideal system, transfer curves are expected to be linear, and the carrier density is assumed be constant. Wu's model is therefore oversimplified for disordered systems and neglects carrier-density dependent scattering physics. Thus, it is fundamentally incompatible with our rippled-MoS$_2$, and leads to the wrong conclusion. △ Less

Submitted 18 July, 2023; v1 submitted 15 July, 2023; originally announced July 2023.

Laser-induced topological spin switching in a 2D van der Waals magnet

Authors: Maya Khela, Maciej Dabrowski, Safe Khan, Paul S. Keatley, Ivan Verzhbitskiy, Goki Eda, Robert J. Hicken, Hidekazu Kurebayashi, Elton J. G. Santos

Abstract: Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. Of particular interest is the control of the magnetic properties of 2D materials by femtosecond laser pulses which can provide a real path for low-power consumption device platforms i… ▽ More Two-dimensional (2D) van der Waals (vdW) magnets represent one of the most promising horizons for energy-efficient spintronic applications because their broad range of electronic, magnetic and topological properties. Of particular interest is the control of the magnetic properties of 2D materials by femtosecond laser pulses which can provide a real path for low-power consumption device platforms in data storage industries. However, little is known about the interplay between light and spin properties in vdW layers. Here, combining large-scale spin dynamics simulations including biquadratic exchange interactions and wide-field Kerr microscopy (WFKM), we show that ultrafast laser excitation can not only generate different type of spin textures in CrGeTe$_3$ vdW magnets but also induce a reversible transformation between them in a toggle-switch mechanism. Our calculations show that skyrmions, anti-skyrmions, skyrmioniums and stripe domains can be generated via high-intense laser pulses within the picosecond regime. The effect is tunable with the laser energy where different spin behaviours can be selected, such as fast demagnetisation process ($\sim$250 fs) important for information technologies. The phase transformation between the different topological spin textures is obtained as additional laser pulses are applied to the system where the polarisation and final state of the spins can be controlled by external magnetic fields. We experimentally confirmed the creation, manipulation and toggle switching phenomena in CrGeTe$_3$ due to the unique aspect of laser-induced heating of electrons. Our results indicate laser-driven spin textures on 2D magnets as a pathway towards ultrafast reconfigurable architecture at the atomistic level. △ Less

Submitted 14 February, 2023; originally announced February 2023.

Probing spin dynamics of ultra-thin van der Waals magnets via photon-magnon coupling

Authors: Christoph W. Zollitsch, Safe Khan, Vu Thanh Trung Nam, Ivan A. Verzhbitskiy, Dimitrios Sagkovits, James O'Sullivan, Oscar W. Kennedy, Mara Strungaru, Elton J. G. Santos, John J. L. Morton, Goki Eda, Hidekazu Kurebayashi

Abstract: Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical… ▽ More Layered van der Waals (vdW) magnets can maintain a magnetic order even down to the single-layer regime and hold promise for integrated spintronic devices. While the magnetic ground state of vdW magnets was extensively studied, key parameters of spin dynamics, like the Gilbert dam**, crucial for designing ultra-fast spintronic devices, remains largely unexplored. Despite recent studies by optical excitation and detection, achieving spin wave control with microwaves is highly desirable, as modern integrated information technologies predominantly are operated with these. The intrinsically small numbers of spins, however, poses a major challenge to this. Here, we present a hybrid approach to detect spin dynamics mediated by photon-magnon coupling between high-Q superconducting resonators and ultra-thin flakes of Cr$_2$Ge$_2$Te$_6$ (CGT) as thin as 11\,nm. We test and benchmark our technique with 23 individual CGT flakes and extract an upper limit for the Gilbert dam** parameter. These results are crucial in designing on-chip integrated circuits using vdW magnets and offer prospects for probing spin dynamics of monolayer vdW magnets. △ Less

Submitted 28 April, 2023; v1 submitted 6 June, 2022; originally announced June 2022.

Ultrathin quantum light source enabled by a nonlinear van der Waals crystal with vanishing interlayer-electronic-coupling

Authors: Qiangbing Guo, Xiao-Zhuo Qi, Meng Gao, Sanlue Hu, Lishu Zhang, Wenju Zhou, Wenjie Zang, Xiaoxu Zhao, Junyong Wang, Bingmin Yan, Mingquan Xu, Yun-Kun Wu, Goki Eda, Zewen Xiao, Huiyang Gou, Yuan ** Feng, Guang-Can Guo, Wu Zhou, Xi-Feng Ren, Cheng-Wei Qiu, Stephen J. Pennycook, Andrew T. S. Wee

Abstract: Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayer… ▽ More Interlayer electronic coupling in two-dimensional (2D) materials enables tunable and emergent properties by stacking engineering. However, it also brings significant evolution of electronic structures and attenuation of excitonic effects in 2D semiconductors as exemplified by quickly degrading excitonic photoluminescence and optical nonlinearities in transition metal dichalcogenides when monolayers are stacked into van der Waals structures. Here we report a novel van der Waals crystal, niobium oxide dichloride, featuring a vanishing interlayer electronic coupling and scalable second harmonic generation intensity of up to three orders higher than that of exciton-resonant monolayer WS2. Importantly, the strong second-order nonlinearity enables correlated parametric photon pair generation, via a spontaneous parametric down-conversion (SPDC) process, in flakes as thin as ~46 nm. To our knowledge, this is the first SPDC source unambiguously demonstrated in 2D layered materials, and the thinnest SPDC source ever reported. Our work opens an avenue towards develo** van der Waals material-based ultracompact on-chip SPDC sources, and high-performance photon modulators in both classical and quantum optical technologies. △ Less

Submitted 8 February, 2022; originally announced February 2022.

Journal ref: Nature 613, 53-59 (2023)

Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2

Authors: Yaze Wu, Ibrahim Abdelwahab, Ki Chang Kwon, Ivan Verzhbitskiy, Lin Wang, Weng Heng Liew, Kui Yao, Goki Eda, Kian ** Loh, Lei Shen, Su Ying Quek

Abstract: Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical an… ▽ More Using high-throughput first-principles calculations to search for layered van der Waals materials with the largest piezoelectric stress coefficients, we discover NbOI2 to be the one among 2940 monolayers screened. The piezoelectric performance of NbOI2 is independent of thickness, and its electromechanical coupling factor of near unity is a hallmark of optimal interconversion between electrical and mechanical energy. Laser scanning vibrometer studies on bulk and few-layer NbOI2 crystals verify their huge piezoelectric responses, which exceed internal references such as In2Se3 and CuInP2S6. Furthermore, we provide insights into the atomic origins of anti-correlated piezoelectric and ferroelectric responses in NbOX2 (X = Cl, Br, I), based on bond covalency and structural distortions in these materials. Our discovery that NbOI2 has the largest piezoelectric stress coefficients among 2D materials calls for the development of NbOI2-based flexible nanoscale piezoelectric devices. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Mode-center Placement of Monolayer WS$_{2}$ in a Photonic Polymer Waveguide

Authors: Angelina Frank, Justin Zhou, James A. Grieve, Ivan Verzhbitskiy, José Viana-Gomes, Leyi Loh, Michael Schmid, Kenji Watanabe, Takashi Taniguchi, Goki Eda, Alexander Ling

Abstract: Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simul… ▽ More Effective integration of 2D materials such as monolayer transition metal dichalcogenides (TMDs) into photonic waveguides and integrated circuits is being intensely pursued due to the materials' strong exciton-based optical response. Here, we present a platform where a WS$_{2}$-hBN 2D heterostructure is directly integrated into the photonic mode-center of a novel polymer ridge waveguide. FDTD simulations and collection of photoluminescence from the guided mode indicate that this system exhibits significantly improved waveguide-emitter coupling over a previous elastomer platform. This is facilitated by the platform's enhanced refractive-index contrast and a new method for mode-center integration of the coupled TMD. The integration is based on a simple dry-transfer process that is applicable to other 2D materials, and the platform's elastomeric nature is a natural fit to explore strain-tunable hybrid-photonic devices. The demonstrated ability of coupling photoluminescence to a polymer waveguide opens up new possibilities for hybrid-photonic systems in a variety of contexts. △ Less

Submitted 23 July, 2021; originally announced July 2021.

Observation of the out-of-plane polarized spin current from CVD grown WTe2

Authors: Shuyuan Shi, Jie Li, Chuang-Han Hsu, Kyusup Lee, Yi Wang, Li Yang, Junyong Wang, Qisheng Wang, Hao Wu, Wenfeng Zhang, Goki Eda, Gengchiau Liang, Haixin Chang, Hyunsoo Yang

Abstract: Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically ex… ▽ More Weyl semimetal Td-phase WTe2 possesses the spin-resolved band structure with strong spin-orbit coupling, holding promises as a useful spin source material. The noncentrosymmetric crystalline structure of Td-WTe2 endows the generation of the out-of-plane polarized spin, which is of great interest in magnetic memory applications. Previously, WTe2 was explored in spin devices based on mechanically exfoliated single crystal flakes with a size of micrometers. For practical spintronics applications, it is highly desirable to implement wafer-scale thin films. In this work, we utilize centimeter-scale chemical vapor deposition (CVD)-grown Td-WTe2 thin films and study the spin current generation by the spin torque ferromagnetic resonance technique. We find the in-plane and out-of-plane spin conductivities of 7.36 x 10^3 (h/2e) (ohm-m)^-1 and 1.76 x 10^3 (h/2e) (ohm-m)^-1, respectively, in CVD-growth 5 nm-WTe2. We further demonstrate the current-induced magnetization switching in WTe2/NiFe at room temperature in the domain wall motion regime, which may invigorate potential spintronic device innovations based on Weyl semimetals. △ Less

Submitted 8 June, 2021; originally announced June 2021.

Room temperature nonlinear Hall effect and wireless RF rectification in Weyl semimetal TaIrTe4

Authors: Dushyant Kumar, Chuang-Han Hsu, Raghav Sharma, Tay-Rong Chang, Peng Yu, Junyong Wang, Goki Eda, Gengchiau Liang, Hyunsoo Yang

Abstract: The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large… ▽ More The nonlinear Hall effect (NLHE), which can produce a transverse voltage without any magnetic field, is a potential alternative for rectification or frequency doubling. However, the low temperature detection of NLHE limits its applications. Here, we report the room-temperature NLHE in a type-II Weyl semimetal TaIrTe4, which hosts a robust NLHE due to substantial broken inversion symmetry and large band overlap** at the Fermi level. We also observe a temperature-induced sign inversion of NLHE in TaIrTe4. Our theoretical calculations suggest that the observed sign inversion is a result of temperature-induced shift in the chemical potential indicating a direct correlation of NLHE with the electronic structure at the Fermi surface. Finally, the room-temperature NLHE in TaIrTe4 is exploited to demonstrate the wireless RF rectification with zero external bias and magnetic field. This work opens a door to realizing room temperature applications based on the NLHE in Weyl semimetals. △ Less

Submitted 28 December, 2020; originally announced December 2020.

Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors

Authors: Eric Linardy, Dinesh Yadav, Daniele Vella, Ivan A. Verzhbitskiy, Kenji Watanabe, Takashi Taniguchi, Fabian Pauly, Maxim Trushin, Goki Eda

Abstract: Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal d… ▽ More Strong many-body interactions in two-dimensional (2D) semiconductors give rise to efficient exciton-exciton annihilation (EEA). This process is expected to result in the generation of unbound high energy carriers. Here, we report an unconventional photoresponse of van der Waals heterostructure devices resulting from efficient EEA. Our heterostructures, which consist of monolayer transition metal dichalcogenide (TMD), hexagonal boron nitride (hBN), and few-layer graphene, exhibit photocurrent when photoexcited carriers possess sufficient energy to overcome the high energy barrier of hBN. Interestingly, we find that the device exhibits moderate photocurrent quantum efficiency even when the semiconducting TMD layer is excited at its ground exciton resonance despite the high exciton binding energy and large transport barrier. Using ab initio calculations, we show that EEA yields highly energetic electrons and holes with unevenly distributed energies depending on the scattering condition. Our findings highlight the dominant role of EEA in determining the photoresponse of 2D semiconductor optoelectronic devices. △ Less

Submitted 18 April, 2020; originally announced April 2020.

Comments: 6 pages, 3 figures, two-column style

Journal ref: Nano Lett. 2020, 20, 3, 1647-1653

Tailoring Magnetic Anisotropy in Cr$_2$Ge$_2$Te$_6$ by Electrostatic Gating

Authors: Ivan. A. Verzhbitskiy, Hidekazu Kurebayashi, Haixia Cheng, Jun Zhou, Safe Khan, Yuan ** Feng, Goki Eda

Abstract: Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$… ▽ More Electrical control of magnetism of a ferromagnetic semiconductor offers exciting prospects for future spintronic devices for processing and storing information. Here, we report observation of electrically modulated magnetic phase transition and magnetic anisotropy in thin crystal of Cr$_2$Ge$_2$Te$_6$ (CGT), a layered ferromagnetic semiconductor. We show that heavily electron-doped ($\sim$ $10^{14}$ cm$^{-2}$) CGT in an electric double-layer transistor device is found to exhibit hysteresis in magnetoresistance (MR), a clear signature of ferromagnetism, at temperatures up to above 200 K, which is significantly higher than the known Curie temperature of 61 K for an undoped material. Additionally, angle-dependent MR measurements reveal that the magnetic easy axis of this new ground state lies within the layer plane in stark contrast to the case of undoped CGT, whose easy axis points in the out-of-plane direction. We propose that significant do** promotes double-exchange mechanism mediated by free carriers, prevailing over the superexchange mechanism in the insulating state. Our findings highlight that electrostatic gating of this class of materials allows not only charge flow switching but also magnetic phase switching, evidencing their potential for spintronics applications. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Authors: Xiaomin Xu, Thorsten Schultz, Ziyu Qin, Nikolai Severin, Benedikt Haas, Sumin Shen, Jan N. Kirchhof, Andreas Opitz, Christoph T. Koch, Kirill Bolotin, Jürgen P. Rabe, Goki Eda, Norbert Koch

Abstract: Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously… ▽ More Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructure. Consequently, the visualization of spatial structural variations is of paramount importance for future applications. Here we demonstrate how grain boundaries, crystal orientation, and strain fields can unambiguously be identified with combined lateral force microscopy (LFM) and transverse shear microscopy (TSM) for CVD-grown tungsten disulfide (WS2) monolayers, on length scales that are relevant for optoelectronic applications. Further, angle-dependent TSM measurements enable us to acquire the fourth-order elastic constants of monolayer WS2 experimentally. Our results facilitate high-throughput and nondestructive microstructure visualization of monolayer TMDCs, insights into their elastic properties, thus providing an accessible tool to support the development of advanced optoelectronic devices based on such two-dimensional semiconductors. △ Less

Submitted 21 August, 2019; originally announced August 2019.

Journal ref: Advanced Materials 30 1803748 (2018)

Nonlinear magnetotransport shaped by Fermi surface topology and convexity in WTe2

Authors: Pan He, Chuang-Han Hsu, Shuyuan Shi, Kaiming Cai, Junyong Wang, Qisheng Wang, Goki Eda, Hsin Lin, Vitor M. Pereira, Hyunsoo Yang

Abstract: The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we… ▽ More The nature of Fermi surface defines the physical properties of conductors and many physical phenomena can be traced to its shape. Although the recent discovery of a current-dependent nonlinear magnetoresistance in spin-polarized non-magnetic materials has attracted considerable attention in spintronics, correlations between this phenomenon and the underlying fermiology remain unexplored. Here, we report the observation of nonlinear magnetoresistance at room temperature in a semimetal WTe2, with an interesting temperature-driven inversion. Theoretical calculations reproduce the nonlinear transport measurements and allow us to attribute the inversion to temperature-induced changes in Fermi surface convexity. We also report a large anisotropy of nonlinear magnetoresistance in WTe2, due to its low symmetry of Fermi surfaces. The good agreement between experiments and theoretical modeling reveals the critical role of Fermi surface topology and convexity on the nonlinear magneto-response. These results lay a new path to explore ramifications of distinct fermiology for nonlinear transport in condensed-matter. △ Less

Submitted 29 April, 2019; originally announced April 2019.

Journal ref: Nature Communications 10, 1290 (2019)

Phase coherent transport in bilayer and trilayer MoS2

Authors: Leiqiang Chu, Indra Yudhistira, Hennrik Schmidt, Tsz Chun Wu, Shaffique Adam, Goki Eda

Abstract: Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inversion symmetry by an out-of-plane electric field breaks this degeneracy, allowing for spin and valley lifetimes to be manipulated electrically in bilayer MoS2 with an electric field. In this work, we report phase-coheren… ▽ More Bilayer MoS2 is a centrosymmetric semiconductor with degenerate spin states in the six valleys at the corners of the Brillouin zone. It has been proposed that breaking of this inversion symmetry by an out-of-plane electric field breaks this degeneracy, allowing for spin and valley lifetimes to be manipulated electrically in bilayer MoS2 with an electric field. In this work, we report phase-coherent transport properties of double-gated mono-, bi-, and tri-layer MoS2. We observe a similar crossover from weak localization to weak anti-localization, from which we extract the spin relaxation time as a function of both electric field and temperature. We find that the spin relaxation time is inversely proportional to momentum relaxation time, indicating that D'yakonov-Perel mechanism is dominant in all devices despite its centrosymmetry. Further, we found no evidence of electric-field induced changes in spin-orbit coupling strength. This suggests that the interlayer coupling is sufficiently weak and that electron-doped dichalcogenide multilayers behave electrically as decoupled monolayers. △ Less

Submitted 18 April, 2019; originally announced April 2019.

Comments: 21 pages, 7 figures

Journal ref: Phys. Rev. B 100, 125410 (2019)

Measuring valley polarization in two-dimensional materials with second-harmonic spectroscopy

Authors: Yi Wei Ho, Henrique Guimarães Rosa, Ivan Verzhbitskiy, Manuel Jose de Lima Ferreira Rodrigues, Takashi Taniguchi, Kenji Watanabe, Goki Eda, Vitor Manuel Pereira, José Carlos Viana Gomes

Abstract: A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimens… ▽ More A population imbalance at different valleys of an electronic system lowers its effective rotational symmetry. We introduce a technique to measure such imbalance - a valley polarization - that exploits the unique fingerprints of this symmetry reduction in the polarization-dependent second-harmonic generation (SHG). We present the principle and detection scheme in the context of hexagonal two-dimensional crystals, which include graphene-based systems and the family of transition metal dichalcogenides, and provide a direct experimental demonstration using a 2H-MoSe$_{2}$ monolayer at room temperature. We deliberately use the simplest possible setup, where a single pulsed laser beam simultaneously controls the valley imbalance and tracks the SHG process. We further developed a model of the transient population dynamics which analytically describes the valley-induced SHG rotation in very good agreement with the experiment. In addition to providing the first experimental demonstration of the effect, this work establishes a conceptually simple, com-pact and transferable way of measuring instantaneous valley polarization, with direct applicability in the nascent field of valleytronics. △ Less

Submitted 4 December, 2019; v1 submitted 4 March, 2019; originally announced March 2019.

A spin dynamics study in layered van der Waals single crystal, Cr$_2$Ge$_2$Te$_6$

Authors: S. Khan, C. W. Zollitsch, D. M. Arroo, H. Cheng, I. Verzhbitskiy, A. Sud, Y. P. Feng, G. Eda, H. Kurebayashi

Abstract: We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is… ▽ More We study the magnetisation dynamics of a bulk single crystal Cr$_2$Ge$_2$Te$_6$ (CGT), by means of broadband ferromagnetic resonance (FMR), for temperatures from 60 K down to 2 K. We determine the Kittel relations of the fundamental FMR mode as a function of frequency and static magnetic field for the magnetocrystalline easy - and hard - axis. The uniaxial magnetocrystalline anisotropy constant is extracted and compared with the saturation magnetisation, when normalised with their low temperature values. The ratios show a clear temperature dependence when plotted in the logarithmic scale, which departs from the predicted Callen-Callen power law fit of a straight line, where the scaling exponent \textit{n}, $K_{u}(T) \propto [M_s(T)/M_s(2$ K$)]^n$, contradicts the expected value of 3 for uniaxial anisotropy. Additionally, the spectroscopic g-factor for both the magnetic easy - and hard - axis exhibits a temperature dependence, with an inversion between 20 K and 30 K, suggesting an influence by orbital angular momentum. Finally, we qualitatively discuss the observation of multi-domain resonance phenomena in the FMR spectras, at magnetic fields below the saturation magnetisation. △ Less

Submitted 25 August, 2019; v1 submitted 1 March, 2019; originally announced March 2019.

Comments: 13 pages, main text: page 1-8 with 6 figures, supplementary material: page 9-13 with 4 figures. Revised Manuscript: - Added references - Corrected Typos - Replaced figure 4 with a new figure - Modified discussion about figure 5

Journal ref: Phys. Rev. B 100, 134437 (2019)

Suppressed out-of-plane polarizability of free excitons in monolayer WSe$_{2}$

Authors: Ivan A. Verzhbitskiy, Daniele Vella, Kenji Watanabe, Takashi Taniguchi, Goki Eda

Abstract: Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe$_{2}$ in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free and bound exciton photoluminescence peaks with increasing electric fields at a constant… ▽ More Monolayer semiconductors are atomically thin quantum wells with strong confinement of electrons in two-dimensional (2D) plane. Here, we experimentally study the out-of-plane polarizability of excitons in hBN-encapsulated monolayer WSe$_{2}$ in strong electric fields of up to 1.6 V/nm (16 MV/cm). We monitor free and bound exciton photoluminescence peaks with increasing electric fields at a constant carrier density, carefully compensating for unintentional photodo** in our double-gated device at 4K. We show that the Stark shift is < 0.4 meV despite the large electric fields applied, yielding an upper limit of polarizability α$_{z}$ to be ~ 10$^{-11}$ Dm/V. Such a small polarizability, which is nearly two orders of magnitude smaller than the previously reported value for MoS$_{2}$, indicates strong atomic confinement of electrons in this 2D system and highlights the unusual robustness of free excitons against surface potential fluctuations. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Elastomeric waveguide on-chip coupling of an encapsulated MoS$_2$ monolayer

Authors: Filip Auksztol, Daniele Vella, Ivan Verzhbitskiy, Kian Fong Ng, Yi Wei Ho, James A Grieve, José Viana-Gomes, Goki Eda, Alexander Ling

Abstract: We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates ad… ▽ More We propose a robust photonic platform for encapsulation and addressing of optically active 2D- and nano-materials. Our implementation utilises a monolayer of MoS$_2$ transition metal dichalcogenide embedded in an elastomeric waveguide chip. The structure is manufactured from PDMS using soft-lithography and capable of sustaining a single mode of guided light. We prove that this setup facilitates addressing of the 2D material flake by pum** it with polarised laser light and gathering polarisation-resolved photoluminescence spectra with the extinction ratio of 31, which highlights the potential for selection-rule dependent measurements. Our results demonstrate improved handling of the material and experimental simplification compared to other techniques. Furthermore, inherent elasticity of the host provides an avenue for direct mechanical coupling to embedded materials. △ Less

Submitted 2 March, 2019; v1 submitted 11 October, 2018; originally announced October 2018.

Comments: Accepted to ACS Photonics with DOI 10.1021/acsphotonics.8b01493

Characterization of the second- and third-harmonic optical susceptibilities of atomically thin tungsten diselenide

Authors: Henrique G. Rosa, Ho Yi Wei, Ivan Verzhbitskiy, Manuel J. F. L. Rodrigues, Takashi Taniguchi, Kenji Watanabe, Goki Eda, Vitor M. Pereira, Jose C. V. Gomes

Abstract: We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe… ▽ More We report the first detailed characterization of the sheet third-harmonic optical susceptibility, $χ_{s}^{(3)}$, of tungsten diselenide (WSe$_{2}$). With a home-built confocal microscope setup developed to study harmonics generation, we map the second- and third-harmonic intensities as a function of position in the sample, pump power and polarization angle, for single and few layers flakes of WSe$_{2}$. We register a value of $|χ_{s}^{(3)}| \approx$ 0.91 $\times$ 10$^{-28}$ m$^{3}$ V$^{-2}$ at a fundamental excitation frequency of $\hbarω$ = 0.8 eV, which is comparable in magnitude to the third-harmonic susceptibility of other group-VI transition metal dichalcogenides. The simultaneously recorded second-harmonic susceptibility is found to be $|χ_{s}^{(2)}| \approx$ 0.70 $\times$ 10$^{-19}$ m$^{2}$ V$^{-1}$ in very good agreement on the order of magnitude with recent reports for WSe$_{2}$, which asserts the robustness of our values for $|χ_{s}^{(3)}|$. △ Less

Submitted 4 January, 2019; v1 submitted 5 March, 2018; originally announced March 2018.

Comments: 20 pages, 8 figures, 1 table

Journal ref: Scientific Reportsvolume 8, Article number: 10035 (2018)

Vapor-Liquid-Solid Growth of Monolayer MoS2 Nanoribbons

Authors: Shisheng Li, Yung-Chang Lin, Wen Zhao, **g Wu, Zhuo Wang, Zehua Hu, Youde Shen, Dai-Ming Tang, Junyong Wang, Qi Zhang, Hai Zhu, Leiqiang Chu, Weijie Zhao, Chang Liu, Zhipei Sun, Takaaki Taniguchi, Minoru Osada, Wei Chen, Qing-Hua Xu, Andrew Thye Shen Wee, Kazu Suenaga Feng Ding, Goki Eda

Abstract: Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of… ▽ More Chemical vapor deposition (CVD) of two-dimensional (2D) materials such as monolayer MoS2 typically involves the conversion of vapor-phase precursors to a solid product in a process that may be described as a vapor-solid-solid (VSS) mode. Here, we report the first demonstration of vapor-liquid-solid (VLS) growth of monolayer MoS2 yielding highly crystalline ribbon-shaped structures with a width of a few tens of nanometers to a few micrometers. The VLS growth mode is triggered by the reaction between molybdenum oxide and sodium chloride, which results in the formation of molten Na-Mo-O droplets. These droplets mediate the growth of MoS2 ribbons in the "crawling mode" when saturated with sulfur on a crystalline substrate. Our growth yields straight and kinked ribbons with a locally well-defined orientation, reflecting the regular horizontal motion of the liquid droplets during growth. Using atomic-resolution scanning transmission electron microscopy (STEM) and second harmonic generation (SHG) microscopy, we show that the ribbons are homoepitaxially on monolayer MoS2 surface with predominantly 2H- or 3R-type stacking. These findings pave the way to novel devices with structures of mixed dimensionalities. △ Less

Submitted 30 January, 2018; v1 submitted 27 January, 2018; originally announced January 2018.

Comments: 40 pages, 19 figures

Topological Weyl phase transition in Mo$_x$W$_{1-x}$Te$_2$

Authors: Ilya Belopolski, Daniel S. Sanchez, Yukiaki Ishida, Peng Yu, Songtian S. Zhang, Tay-Rong Chang, Guoqing Chang, Xingchen Pan, Hong Lu, Hao Zheng, Su-Yang Xu, Baigeng Wang, Guang Bian, Da-Wei Fu, Shisheng Li, Goki Eda, Horng-Tay Jeng, Takeshi Kondo, Shuang Jia, Hsin Lin, Zheng Liu, Fengqi Song, Shik Shin, M. Zahid Hasan

Abstract: Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because… ▽ More Topological phases of matter exhibit phase transitions between distinct topological classes. These phase transitions are exotic in that they do not fall within the traditional Ginzburg-Landau paradigm but are instead associated with changes in bulk topological invariants and associated topological surface states. In the case of a Weyl semimetal this phase transition is particularly unusual because it involves the creation of bulk chiral charges and the nucleation of topological Fermi arcs. Here we image a topological phase transition to a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ with changing composition $x$. Using pump-probe ultrafast angle-resolved photoemission spectroscopy (pump-probe ARPES), we directly observe the nucleation of a topological Fermi arc at $x_c \sim 7\%$, showing the critical point of a topological Weyl phase transition. For Mo do**s $x < x_c$, we observe no Fermi arc, while for $x > x_c$, the Fermi arc gradually extends as the bulk Weyl points separate. Our results demonstrate for the first time the creation of magnetic monopoles in momentum space. Our work opens the way to manipulating chiral charge and topological Fermi arcs in Weyl semimetals for transport experiments and device applications. △ Less

Submitted 22 December, 2016; originally announced December 2016.

Discovery of a new type of topological Weyl fermion semimetal state in Mo$_x$W$_{1-x}$Te$_2$

Authors: Ilya Belopolski, Daniel S. Sanchez, Yukiaki Ishida, Xingchen Pan, Peng Yu, Su-Yang Xu, Guoqing Chang, Tay-Rong Chang, Hao Zheng, Nasser Alidoust, Guang Bian, Madhab Neupane, Shin-Ming Huang, Chi-Cheng Lee, You Song, Haijun Bu, Guanghou Wang, Shisheng Li, Goki Eda, Horng-Tay Jeng, Takeshi Kondo, Hsin Lin, Zheng Liu, Fengqi Song, Shik Shin , et al. (1 additional authors not shown)

Abstract: The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promis… ▽ More The recent discovery of a Weyl semimetal in TaAs offers the first Weyl fermion observed in nature and dramatically broadens the classification of topological phases. However, in TaAs it has proven challenging to study the rich transport phenomena arising from emergent Weyl fermions. The series Mo$_x$W$_{1-x}$Te$_2$ are inversion-breaking, layered, tunable semimetals already under study as a promising platform for new electronics and recently proposed to host Type II, or strongly Lorentz-violating, Weyl fermions. Here we report the discovery of a Weyl semimetal in Mo$_x$W$_{1-x}$Te$_2$ at $x = 25\%$. We use pump-probe angle-resolved photoemission spectroscopy (pump-probe ARPES) to directly observe a topological Fermi arc above the Fermi level, demonstrating a Weyl semimetal. The excellent agreement with calculation suggests that Mo$_x$W$_{1-x}$Te$_2$ is the first Type II Weyl semimetal. We also find that certain Weyl points are at the Fermi level, making Mo$_x$W$_{1-x}$Te$_2$ a promising platform for transport and optics experiments on Weyl semimetals. △ Less

Submitted 18 December, 2016; originally announced December 2016.

Journal ref: Nature Communications 7, 13643 (2016)

Enhancing charge-density-wave order in 1T-TiSe2 nanosheet by encapsulation with hexagonal Boron Nitride

Authors: Linjun Li, WeiJie Zhao, Bo Liu, Tianhua Ren, Goki Eda, Kian** Loh

Abstract: Layered transition metal dichalcogenides (TMDs) provide an ideal platform for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order. When TMDs are reduced in thickness to the 2-D limit, it is expected that the substrates will exert considerable influence on the electron states. Here we report a study of the charge density wave (CDW) state i… ▽ More Layered transition metal dichalcogenides (TMDs) provide an ideal platform for exploring the effects of dimensionality on correlated electronic phases such as charge density wave (CDW) order. When TMDs are reduced in thickness to the 2-D limit, it is expected that the substrates will exert considerable influence on the electron states. Here we report a study of the charge density wave (CDW) state in 1T-TiSe2 nanosheets of different thicknesses when the sheets are encapsulated by hexagonal Boron Nitride (h-BN) or supported on SiO2 substrate. Our results show that dimensionality reduction results in an enhancement of CDW order and that disorder and substrate phonons tends to destroy CDW order, preventing observation of intrinsic CDW transition in ultrathin samples. Encapsulated 10 nm thick 1T-TiSe2 samples exhibit intrinsic CDW with transition temperature as high as 235 K. Our study points out that choosing the right substrate is important in the search for room temperature CDW materials. △ Less

Submitted 5 October, 2016; originally announced October 2016.

Journal ref: Appl. Phys. Lett. 109, 141902 (2016)

Controlling many-body states by the electric-field effect in a two-dimensional material

Authors: Linjun Li, Eoin C. T. O Farrell, Kian** Loh, Goki Eda, Barbaros Ozyilmaz, Antonio H. Castro Neto

Abstract: To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material… ▽ More To understand complex physics of a system with strong electron electron interactions, it is ideal to control and monitor its properties while tuning an external electric field applied to the system. Indeed, complete electric field control of many body states in strongly correlated electron systems is fundamental to the next generation of condensed matter research and devices. However, the material must be thin enough to avoid shielding of the electric field in bulk material. Two-dimensional materials do not experience electrical screening, and their charge carrier density can be controlled by gating. 1T TiSe2 is a prototypical 2D material that shows charge density wave(CDW) and superconductivity in its phase diagram, presenting several similarities with other layered systems such as copper oxides, iron pnictides, crystals of rare-earth and actinide atoms. By studying 1T TiSe2 single crystals with thicknesses of 10 nm or less, encapsulated in 2D layers of hexagonal boron nitride, we achieve unprecedented control over the CDW transition temperature, tuned from 170 K to 40 K, and over the superconductivity transition temperature, tuned from a quantum critical point at 0 K up to 3 K. Electrically driving TiSe2 over different ordered electronic phases allows us to study the details of the phase transitions between many-body states. Observations of periodic oscillations of magnetoresistance induced by the Little Parks effect show that the appearance of superconductivity is directly correlated to the spatial texturing of the amplitude and phase of the superconductivity order parameter, corresponding to a 2D matrix of superconductivity. We infer that this superconductivity matrix is supported by a matrix of incommensurate CDW states embedded in the commensurate CDW states. Our results show that spatially modulated electronic states are fundamental to the appearance of 2D superconductivity. △ Less

Submitted 15 July, 2016; originally announced July 2016.

Comments: 22 pages, 10 figures

Journal ref: Nature 529,185 (2016)

Characterization of the second- and third-order nonlinear optical susceptibilities of monolayer MoS$_2$ using multiphoton microscopy

Authors: R. I. Woodward, R. T. Murray, C. F. Phelan, R. E. P. de Oliveira, T. H. Runcorn, E. J. R. Kelleher, S. Li, E. C. de Oliveira, G. J. M. Fechine, G. Eda, C. J. S. de Matos

Abstract: We report second- and third-harmonic generation in monolayer MoS$_\mathrm{2}$ as a tool for imaging and accurately characterizing the material's nonlinear optical properties under 1560 nm excitation. Using a surface nonlinear optics treatment, we derive expressions relating experimental measurements to second- and third-order nonlinear sheet susceptibility magnitudes, obtaining values of… ▽ More We report second- and third-harmonic generation in monolayer MoS$_\mathrm{2}$ as a tool for imaging and accurately characterizing the material's nonlinear optical properties under 1560 nm excitation. Using a surface nonlinear optics treatment, we derive expressions relating experimental measurements to second- and third-order nonlinear sheet susceptibility magnitudes, obtaining values of $|χ_s^{(2)}|=2.0\times10^{-20}$ m$^2$ V$^{-1}$ and for the first time for monolayer MoS$_\mathrm{2}$, $|χ_s^{(3)}|=1.7\times10^{-28}$ m$^3$ V$^{-2}$. These sheet susceptibilities correspond to effective bulk nonlinear susceptibility values of $|χ_{b}^{(2)}|=2.9\times10^{-11}$ m V$^{-1}$ and $|χ_{b}^{(3)}|=2.4\times10^{-19}$ m$^2$ V$^{-2}$, accounting for the sheet thickness. Experimental comparisons between MoS$_\mathrm{2}$ and graphene are also performed, demonstrating $\sim$3.4 times stronger third-order sheet nonlinearity in monolayer MoS$_\mathrm{2}$, highlighting the material's potential for nonlinear photonics in the telecommunications C band. △ Less

Submitted 15 November, 2016; v1 submitted 26 June, 2016; originally announced June 2016.

Comments: Accepted by 2D Materials, 28th Oct 2016

Valence band electronic structure evolution of graphene oxide upon thermal annealing for optoelectronics

Authors: Hisato Yamaguchi, Shuichi Ogawa, Daiki Watanabe, Hideaki Hozumi, Yongqian Gao, Goki Eda, Cecilia Mattevi, Takeshi Fujita, Akitaka Yoshigoe, Shinji Ishizuka, Lyudmyla Adamska, Takatoshi Yamada, Andrew M. Dattelbaum, Gautam Gupta, Stephen K. Doorn, Kirill A. Velizhanin, Yuden Teraoka, Mingwei Chen, Han Htoon, Manish Chhowalla, Aditya D. Mohite, Yuji Takakuwa

Abstract: We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC.… ▽ More We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using real-time ultraviolet photoelectron spectroscopy. We observed a drastic increase in density of states around the Fermi level upon thermal annealing at ~600 oC. The result indicates that while there is an apparent band gap for GO prior to a thermal reduction, the gap closes after an annealing around that temperature. This trend of band gap closure was correlated with electrical, chemical, and structural properties to determine a set of GO material properties that is optimal for optoelectronics. The results revealed that annealing at a temperature of ~500 oC leads to the desired properties, demonstrated by a uniform and an order of magnitude enhanced photocurrent map of an individual GO sheet compared to as-synthesized counterpart. △ Less

Submitted 3 May, 2016; originally announced May 2016.

Comments: 9 pages, 4 figures in physica status solidi (a) 2016

Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects

Authors: Bo Liu, Weijie Zhao, Zi**g Ding, Ivan Verzhbitskiy, Linjun Li, Junpeng Lu, Jianyi Chen, Goki Eda, Kian ** Loh

Abstract: Intrinsic electrical and excitonic properties of monolayer transition metal dichalcogenides are studied on CYTOP fluoropolymer substrates with greatly suppressed unintentional do** and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid states backdates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between… ▽ More Intrinsic electrical and excitonic properties of monolayer transition metal dichalcogenides are studied on CYTOP fluoropolymer substrates with greatly suppressed unintentional do** and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid states backdates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandage renormalization, Pauli blocking and carrier screening against carrier do**. △ Less

Submitted 26 April, 2016; originally announced April 2016.

Comments: Accepted for publication in Advanced Materials, 4 figures

Evidence for Fast Interlayer Energy Transfer in MoSe2/WS2 Heterostructures

Authors: Daichi Kozawa, Alexandra Carvalho, Ivan Verzhbitskiy, Francesco Giustiniano, Yuhei Miyauchi, Shinichiro Mouri, A. H. Castro Neto, Kazunari Matsuda, Goki Eda

Abstract: Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transitio… ▽ More Strongly bound excitons confined in two-dimensional (2D) semiconductors are dipoles with a perfect in-plane orientation. In a vertical stack of semiconducting 2D crystals, such in-plane excitonic dipoles are expected to efficiently couple across van der Waals gap due to strong interlayer Coulomb interaction and exchange their energy. However, previous studies on heterobilayers of group 6 transition metal dichalcogenides (TMDs) found that the exciton decay dynamics is dominated by interlayer charge transfer (CT) processes. Here, we report an experimental observation of fast interlayer energy transfer (ET) in MoSe2/WS2 heterostructures using photoluminescence excitation (PLE) spectroscopy. The temperature dependence of the transfer rates suggests that the ET is Förster-type involving excitons in the WS2 layer resonantly exciting higher-order excitons in the MoSe2 layer. The estimated ET time of the order of 1 ps is among the fastest compared to those reported for other nanostructure hybrid systems such as carbon nanotube bundles. Efficient ET in these systems offers prospects for optical amplification and energy harvesting through intelligent layer engineering. △ Less

Submitted 28 June, 2016; v1 submitted 6 September, 2015; originally announced September 2015.

Comments: Main text: 14 pages, 5 figures, Supplementary Information: 18 pages, 12 figures, 1 table, Nano Letters (2016)

Journal ref: Nano Lett. 16, 4087 (2016)

Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals

Authors: Shisheng Li, Shunfeng Wang, Dai-Ming Tang, Weijie Zhao, Huilong Xu, Leiqiang Chu, Yoshio Bando, Dmitri Golberg, Goki Eda

Abstract: Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides… ▽ More Chemical vapor deposition (CVD) of two-dimensional (2D) tungsten dichalcogenide crystals requires steady flow of tungsten source in the vapor phase. This often requires high temperature and low pressure due to the high sublimation point of tungsten oxide precursors. We demonstrate atmospheric pressure CVD of WSe2 and WS2 monolayers at moderate temperatures (700 ~ 850 oC) using alkali metal halides (MX where M= Na or K and X=Cl, Br or I) as the growth promoters. We attribute the facilitated growth to the formation of volatile tungsten oxyhalide species during growth, which leads to efficient delivery of the precursor to the growth substrates. The monolayer crystals were found to be free of unintentional do** with alkali metal and halogen atoms. Good field-effect transistor (FET) performances with high current on/off ratio ~10 7, hole and electron mobilities up to 102 and 26 cm2 V 1 s-1 for WSe2 and electron mobility of ~14 cm2 V-1 s-1 for WS2 devices were achieved. △ Less

Submitted 1 September, 2015; originally announced September 2015.

Comments: 21 pages, 4 figures in manuscript & 10 pages, 6 figures in supplementary material

Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS$_2$

Authors: H. Schmidt, I. Yudhistira, L. Chu, A. H. Castro Neto, B. Oezyilmaz, S. Adam, G. Eda

Abstract: Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observatio… ▽ More Monolayers of group 6 transition metal dichalcogenides are promising candidates for future spin-, valley-, and charge-based applications. Quantum transport in these materials reflects a complex interplay between real spin and pseudo-spin (valley) relaxation processes, which leads to either positive or negative quantum correction to the classical conductivity. Here we report experimental observation of a crossover from weak localization to weak anti-localization in highly n-doped monolayer MoS2. We show that the crossover can be explained by a single parameter associated with electron spin lifetime of the system. We find that the spin lifetime is inversely proportional to momentum relaxation time, indicating that spin relaxation occurs via Dyakonov-Perel mechanism. △ Less

Submitted 21 July, 2015; v1 submitted 2 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 116, 046803 (2016)

Spin-Orbit Proximity Effect in Graphene

Authors: Ahmet Avsar, Jun You Tan, Jayakumar Balakrishnan, Gavin Kok Wai Koon, Jayeeta Lahiri, Alexandra Carvalho, Aleksandr Rodin, Thiti Taychatanapat, Eoin OFarrell, Goki Eda, Antonio Helio Castro Neto, Barbaros Ozyilmaz

Abstract: The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of… ▽ More The development of a spintronics device relies on efficient generation of spin polarized currents and their electric field controlled manipulation. While observation of exceptionally long spin relaxation lengths make graphene an intriguing material for spintronics studies, modulation of spin currents by gate field is almost impossible due to negligibly small intrinsic spin orbit coupling (SOC) of graphene. In this work, we create an artificial interface between monolayer graphene and few-layers semiconducting tungsten disulfide (WS2). We show that in such devices graphene acquires a SOC as high as 17meV, three orders of magnitude higher than its intrinsic value, without modifying any of the structural properties of the graphene. Such proximity SOC leads to the spin Hall effect even at room temperature and opens the doors for spin FETs. We show that intrinsic defects in WS2 play an important role in this proximity effect and that graphene can act as a probe to detect defects in semiconducting surfaces. △ Less

Submitted 2 December, 2014; originally announced December 2014.

Journal ref: Nature Communications, 5, 4875 (2014)

Large Thermoelectricity via Variable Range Hop** in Chemical Vapor Deposition Grown Single-layer MoS2

Authors: **g Wu, Hennrik Schmidt, Amara Kiran Kumar, Xiangfan Xu, Goki Eda, Barbaros Özyilmaz

Abstract: Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is mo… ▽ More Ultrathin layers of semiconducting molybdenum disulfide (MoS2) offer significant prospects in future electronic and optoelectronic applications. Although an increasing number of experiments bring light into the electronic transport properties of these crystals, their thermoelectric properties are much less known. In particular, thermoelectricity in chemical vapor deposition grown MoS2, which is more practical for wafer-scale applications, still remains unexplored. Here, for the first time, we investigate these properties in grown single layer MoS2. Micro-fabricated heaters and thermometers are used to measure both electrical conductivity and thermopower. Large values of up to ~30 mV/K at room temperature are observed, which are much larger than those observed in other two dimensional crystals and bulk MoS2. The thermopower is strongly dependent on temperature and applied gate voltage with a large enhancement at the vicinity of the conduction band edge. We also show that the Seebeck coefficient follows S~T^1/3 suggesting a two-dimensional variable range hop** mechanism in the system, which is consistent with electrical transport measurements. Our results help to understand the physics behind the electrical and thermal transports in MoS2 and the high thermopower value is of interest to future thermoelectronic research and application. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Comments: 21 pages + 11 pages supporting information

Journal ref: Nano Letters 14 (5), 2730 (2014)

Charge transport in ion-gated mono-, bi-, and trilayer MoS2 field effect transistors

Authors: Leiqiang Chu, Hennrik Schmidt, Jiang Pu, Shunfeng Wang, Barbaros Özyilmaz, Taishi Takenobu, Goki Eda

Abstract: Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a comb… ▽ More Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here, we investigate the transport properties of mechanically exfoliated mono-, bi-, and trilayer MoS2 sheets over a wide range of carrier densities realized by a combination of ion gel top gate and SiO2 back gate which allows us to achieve high charge carrier (>10^13) density. We discuss the gating properties of the devices as a function of layer thickness and demonstrate resistivities of as low as 1 kΩ for monolayer and 420Ω for bilayer devices at 10 K. We show that from the capacitive coupling of the two gates, quantum capacitance can be roughly estimated to be on the order of 1 μF/cm^2 for all devices studied. Temperature dependence of the carrier mobility in the high density regime indicates that short-range scatterers limit charge transport at low temperatures. △ Less

Submitted 9 July, 2014; originally announced July 2014.

Comments: 25 pages

Journal ref: Scientific Reports 4, 7293 (2014)

Electronic transport in graphene-based heterostructures

Authors: J. Y. Tan, A. Avsar, J. Balakrishnan, G. K. W. Koon, T. Taychatanapat, E. C. T. O Farrell, K. Watanabe, T. Taniguchi, G. Eda, A. H. Castro Neto, B. Ozyilmaz

Abstract: While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybden… ▽ More While boron nitride (BN) substrates have been utilized to achieve high electronic mobilities in graphene field effect transistors, it is unclear how other layered two dimensional (2D) crystals influence the electronic performance of graphene. In this letter, we study the surface morphology of 2D BN, gallium selenide (GaSe) and transition metal dichalcogenides (tungsten disulfide (WS2) and molybdenum disulfide (MoS2)) crystals and their influence on graphene's electronic quality. Atomic force microscopy analysis show that these crystals have improved surface roughness (root mean square (rms) value of only ~ 0.1 nm) compared to conventional SiO2 substrate. While our results confirm that graphene devices exhibit very high electronic mobility on BN substrates, graphene devices on WS2 substrates (G/WS2) are equally promising for high quality electronic transport (~ 38,000 cm2/Vs at RT), followed by G/MoS2 (~ 10,000 cm2/Vs) and G/GaSe (~ 2,200 cm2/Vs). However, we observe a significant asymmetry in electron and hole conduction in G/WS2 and G/MoS2 heterostructures, most likely due to the presence of sulphur vacancies in the substrate crystals. GaSe crystals are observed to degrade over time even under ambient conditions, leading to a large hysteresis in graphene transport making it a less suitable substrate. △ Less

Submitted 10 June, 2014; originally announced June 2014.

Comments: 15 pages, 3 figures

Journal ref: Applied Physics Letters, 104, 183504 (2014)

Nonlinear Photoluminescence in Atomically Thin Layered WSe2 Arising from Diffusion-Assisted Exciton-Exciton Annihilation

Authors: Shinichiro Mouri, Yuhei Miyauchi, Minglin Toh, Weijie Zhao, Goki Eda, Kazunari Matsuda

Abstract: We studied multi-exciton dynamics in monolayer WSe2 using nonlinear photoluminescence (PL) spectroscopy and Monte Carlo simulations. We observed strong nonlinear saturation behavior of exciton PL with increasing excitation power density, and long-distance exciton diffusion reaching several micrometers. We demonstrated that the diffusion-assisted exciton-exciton annihilation model accounts for the… ▽ More We studied multi-exciton dynamics in monolayer WSe2 using nonlinear photoluminescence (PL) spectroscopy and Monte Carlo simulations. We observed strong nonlinear saturation behavior of exciton PL with increasing excitation power density, and long-distance exciton diffusion reaching several micrometers. We demonstrated that the diffusion-assisted exciton-exciton annihilation model accounts for the observed nonlinear PL behavior. The long-distance exciton diffusion and subsequent efficient exciton-exciton annihilation process determined the unusual multi-exciton dynamics in atomically thin layered transition metal dichalcogenides. △ Less

Submitted 22 May, 2014; originally announced May 2014.

Journal ref: Phys. Rev. B 90, 155449 (2014)

Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals

Authors: A. V. Kretinin, Y. Cao, J. S. Tu, G. L. Yu, R. Jalil, K. S. Novoselov, S. J. Haigh, A. Gholinia, A. Mishchenko, M. Lozada, T. Georgiou, C. R. Woods, F. Withers, P. Blake, G. Eda, A. Wirsig, C. Hucho, K. Watanabe, T. Taniguchi, A. K. Geim, R. V. Gorbachev

Abstract: Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found t… ▽ More Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper oxide and vanadium pentoxide results in exceptionally low quality of graphene devices with mobilities of ~ 1,000 cm$^{2}$ V$^{-1}$s$^{-1}$. We attribute the difference mainly to self-cleansing that takes place at interfaces between graphene, hBN and transition metal dichalcogenides. Surface contamination assembles into large pockets allowing the rest of the interface to become atomically clean. The cleansing process does not occur for graphene on atomically flat oxide substrates. △ Less

Submitted 24 May, 2014; v1 submitted 20 March, 2014; originally announced March 2014.

Comments: 19 pages, 11 figures, 1 table including Supporting Information

Journal ref: Nano Letters 14, 3270 - 3276 (2014)

Photocarrier relaxation in two-dimensional semiconductors

Authors: Daichi Kozawa, Rajeev Kumar, Alexandra Carvalho, Amara Kiran Kumar, Weijie Zhao, Shunfeng Wang, Minglin Toh, Ricardo M. Ribeiro, A. H. Castro Neto, Kazunari Matsuda, Goki Eda

Abstract: Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation… ▽ More Two-dimensional (2D) crystals of semiconducting transition metal dichalcogenides (TMD) absorb a large fraction of incident photons in the visible frequencies despite being atomically thin. It has been suggested that the strong absorption is due to the parallel band or "band nesting" effect and corresponding divergence in the joint density of states. Here, we show using photoluminescence excitation spectroscopy that the band nesting in mono- and bilayer MX$_2$ (M = Mo, W and X = S, Se) results in excitation-dependent characteristic relaxation pathways of the photoexcited carriers. Our experimental and simulation results reveal that photoexcited electron-hole pairs in the nesting region spontaneously separate in the $k$-space, relaxing towards immediate band extrema with opposite momentum. These effects imply that the loss of photocarriers due to direct exciton recombination is temporarily suppressed for excitation in resonance with band nesting. Our findings highlight the potential for efficient hot carrier collection using these materials as the absorbers in optoelectronic devices. △ Less

Submitted 3 February, 2014; originally announced February 2014.

Comments: Main text: 19 pages, 5 figures; Supplementary Information: 12 pages, 4 figures, 1 table

Journal ref: Nature Communications 5, 4543 (2014)

Transport properties of monolayer MoS$_2$ grown by chemical vapour deposition

Authors: Hennrik Schmidt, Shunfeng Wang, Leiqiang Chu, Minglin Toh, Rajeev Kumar, Weijie Zhao, Antonio H. Castro Neto, Jens Martin, Shaffique Adam, Barbaros Oezyilmaz, Goki Eda

Abstract: Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS$_2$. The devices show low temperature mobilities up to 500 cm$^2$V… ▽ More Recent success in the growth of monolayer MoS$_2$ via chemical vapor deposition (CVD) has opened up prospects for the implementation of these materials into thin film electronic and optoelectronic devices. Here, we investigate the electronic transport properties of individual crystallites of high quality CVD-grown monolayer MoS$_2$. The devices show low temperature mobilities up to 500 cm$^2$V$^{-1}$s$^{-1}$ and a clear signature of metallic conduction at high do** densities. These characteristics are comparable to the electronic properties of the best mechanically exfoliated monolayers in literature, verifying the high electronic quality of the CVD-grown materials. We analyze the different scattering mechanisms and show, that the short-range scattering plays a dominant role in the highly conducting regime at low temperatures. Additionally, the influence of phonons as a limiting factor of these devices is discussed. △ Less

Submitted 6 January, 2014; originally announced January 2014.

Comments: Main text: 5 pages, 4 figures; Supplementary Information: 4 pages, 10 figures

Journal ref: Nano Letters, 14, 1909 (2014)

Origin of indirect optical transitions in few-layer MoS2, WS2 and WSe2

Authors: Weijie Zhao, R. M. Ribeiro, Minglin Toh, Alexandra Carvalho, Christian Kloc, A. H. Castro Neto, Goki Eda

Abstract: It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness re… ▽ More It has been well established that single layer MX2 (M=Mo,W and X=S,Se) are direct gap semiconductors with band edges coinciding at the K point in contrast to their indirect gap multilayer counterparts. In few-layer MX2, there are two valleys along the Γ-K line with similar energy. There is little understanding on which of the two valleys forms the conduction band minimum (CBM) in this thickness regime. We investigate the conduction band valley structure in few-layer MX2 by examining the temperature-dependent shift of indirect exciton PL. Hihgly anisotropic thermal expansion of the lattice and corresponding evolution of the band structure result in distinct peak shift for indirect transitions involving the K and Λ (midpoint along Γ-K) valleys. We identify the origin of the indirect emission and concurrently determine the relative energy of these valleys. Our results show that the two valleys compete in energy in few-layer WSe2. △ Less

Submitted 4 September, 2013; originally announced September 2013.

Comments: 20 pages, 5 figures

Journal ref: Nano Letters 2013, 13, 5627

Lattice dynamics in mono- and few-layer sheets of WS2 and WSe2

Authors: Weijie Zhao, Zohreh Ghorannevis, Amara Kiran Kumar, **g Ren Pang, Minglin Toh, Xin Zhang, Christian Kloc, ** Heng Tan, Goki Eda

Abstract: Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thic… ▽ More Thickness is one of the fundamental parameters that define the electronic, optical, and thermal properties of two-dimensional (2D) crystals. Phonons in molybdenum disulfide (MoS2) were recently found to exhibit unique thickness dependence due to interplay between short and long range interactions. Here we report Raman spectra of atomically thin sheets of WS2 and WSe2 in the mono- to few-layer thickness regime. We show that, similar to the case of MoS2, the characteristic and modes exhibit stiffening and softening with increasing number of layers, respectively, with a small shift of less than 3 cm-1 due to large mass of the atoms. Thickness dependence is also observed in a series of multiphonon bands arising from overtone, combination, and zone edge phonons, whose intensity exhibit significant enhancement in excitonic resonance conditions. Some of these multiphonon peaks are found to be absent only in monolayers. These features provide a unique fingerprint and rapid identification for monolayer flakes. △ Less

Submitted 4 September, 2013; v1 submitted 3 April, 2013; originally announced April 2013.

Comments: 6 figures

Journal ref: Nanoscale, 2013,5, 9677

An innovative way of etching MoS2: Characterization and mechanistic investigation

Authors: Yuan Huang, **g Wu, Xiangfan Xu, Yuda Ho, Guangxin Ni, Qiang Zou, Gavin Kok Wai Koon, Weijie Zhao, A. H. Castro Neto, Goki Eda, Chengmin Shen, Barbaros Özyilmaz

Abstract: We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be… ▽ More We report a systematic study of the etching of MoS2 crystals by using XeF2 as a gaseous reactant. By controlling the etching process, monolayer MoS2 with uniform morphology can be obtained. The Raman and photoluminescence spectra of the resulting material were similar to those of exfoliated MoS2. Utilizing this strategy, different patterns such as a Hall bar structure and a hexagonal array can be realized. Furthermore, the etching mechanism was studied by introducing graphene as an etching mask. We believe our technique opens an easy and controllable way of etching MoS2, which can be used to fabricate complex nanostructures, such as nanoribbons, quantum dots and transistor structures. This etching process using XeF2 can also be extended to other interesting two-dimensional crystals. △ Less

Submitted 1 March, 2013; originally announced March 2013.

Comments: 22 pages, 9 figures

Journal ref: Nano Research 2013

Evolution of Electronic Structure in Atomically Thin Sheets of WS2 and WSe2

Authors: Weijie Zhao, Zohreh Ghorannevis, Leiqiang Chua, Minglin Toh, Christian Kloc, **-Heng Tan, Goki Eda

Abstract: Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opp… ▽ More Geometrical confinement effect in exfoliated sheets of layered materials leads to significant evolution of energy dispersion with decreasing layer thickness. Molybdenum disulphide (MoS2) was recently found to exhibit indirect to direct gap transition when the thickness is reduced to a single monolayer. This leads to remarkable enhancement in the photoluminescence efficiency, which opens up new opportunities for the optoelectronic applications of the material. Here we report differential reflectance and photoluminescence (PL) spectra of mono- to few-layer WS2 and WSe2 that indicate that the band structure of these materials undergoes similar indirect to direct transition when thinned to a single monolayer. Strong enhancement in PL quantum yield is observed for monoayer WS2 and WSe2 due to exciton recombination at the direct band edge. In contrast to natural MoS2 crystals extensively used in recent studies, few-layer WS2 and WSe2 show comparatively strong indirect gap emission along with distinct direct gap hot electron emission, suggesting high quality of synthetic crystals prepared by chemical vapor transport method. Fine absorption and emission features and their thickness dependence suggest strong effect of Se p-orbitals on the d electron band structure as well as interlayer coupling in WSe2. △ Less

Submitted 21 December, 2012; originally announced December 2012.

Comments: to be published in ACS Nano

Journal ref: ACS Nano, 2013, 7 (1), pp 791

Enhanced Catalytic Activity in Strained Chemically Exfoliated WS2 Nanosheets for Hydrogen Evolution

Authors: Damien Voiry, Hisato Yamaguchi, Junwen Li, Rafael Silva, Diego C. B. Alves, Takeshi Fujita, Mingwei Chen, Tewodros Asefa, Vivek Shenoy, Goki Eda, Manish Chhowalla

Abstract: The ability to efficiently evolve hydrogen via electrocatalysis at low overpotentials holds tremendous promise for clean energy. Hydrogen evolution reaction (HER) can be easily achieved from water if a voltage above the thermodynamic potential of the HER is applied. Large overpotentials are energetically inefficient but can be lowered with expensive platinum based catalysts. Replacement of Pt with… ▽ More The ability to efficiently evolve hydrogen via electrocatalysis at low overpotentials holds tremendous promise for clean energy. Hydrogen evolution reaction (HER) can be easily achieved from water if a voltage above the thermodynamic potential of the HER is applied. Large overpotentials are energetically inefficient but can be lowered with expensive platinum based catalysts. Replacement of Pt with inexpensive, earth abundant electrocatalysts would be significantly beneficial for clean and efficient hydrogen evolution. Towards this end, promising HER characteristics have been reported using 2H (trigonal prismatic) XS2 (where X = Mo or W) nanoparticles with a high concentration of metallic edges as electrocatalysts. The key challenges for HER with XS2 are increasing the number and catalytic activity of active sites. Here we report atomically thin nanosheets of chemically exfoliated WS2 as efficient catalysts for hydrogen evolution with very low overpotentials. Atomic-resolution transmission electron microscopy and spectroscopy analyses indicate that enhanced electrocatalytic activity of WS2 is associated with high concentration of strained metallic 1T (octahedral) phase in the as-exfoliated nanosheets. Density functional theory calculations reveal that the presence of strain in the 1T phase leads to an enhancement of the density of states at the Fermi level and increases the catalytic activity of the WS2 nanosheet. Our results suggest that chemically exfoliated WS2 nanosheets could be interesting catalysts for hydrogen evolution. △ Less

Submitted 6 December, 2012; originally announced December 2012.

Comments: 23 pages, 3 figures

Field emission from atomically thin edges of reduced graphene oxide

Authors: Hisato Yamaguchi, Katsuhisa Murakami, Goki Eda, Takeshi Fujita, Pengfei Guan, Weichao Wang, Cheng Gong, Julien Boisse, Steve Miller, Muge Acik, Kyeongjae Cho, Yves J. Chabal, Mingwei Chen, Fujio Wakaya, Mikio Takai, Manish Chhowalla

Abstract: Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/um) emission of multiple electron beams… ▽ More Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/um) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, suggesting that the emitted electron beams may be coherent. Based on our high-resolution transmission electron microscopy, infrared spectroscopy and simulation results, field emission from the rGO edge is attributed to a stable and unique aggregation of oxygen groups in the form of cyclic edge ethers. Such closely spaced electron beams from rGO offer prospects for novel applications and understanding the physics of linear electron sources. △ Less

Submitted 19 March, 2011; originally announced March 2011.

Comments: 20 pages, 4 figures, Submitted

Highly Uniform 300 mm Wafer-Scale Deposition of Single and Multilayered Chemically Derived Graphene Thin Films

Authors: Hisato Yamaguchi, Goki Eda, Cecilia Mattevi, HoKwon Kim, Manish Chhowalla

Abstract: The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thi… ▽ More The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET devices yielding exceptionally high mobilities of ~ 15 cm2/Vs and sheet resistance of ~ 1 k Ohm/sq at ~ 70 % transparency. △ Less

Submitted 10 December, 2009; originally announced December 2009.

Comments: 11 pages, 4 figures. accepted to ACS Nano

Blue photoluminescence from chemically derived graphene oxide

Authors: Goki Eda, Yun-Yue Lin, Cecilia Mattevi, Hisato Yamaguchi, Hsin-An Chen, I-Sheng Chen, Chun-Wei Chen, Manish Chhowalla

Abstract: Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other… ▽ More Fluorescent organic compounds are of significant importance to the development of low-cost opto-electronic devices. Blue fluorescence from aromatic or olefinic molecules and their derivatives is particularly important for display and lighting applications. Thin film deposition of low-molecular-weight fluorescent organic compounds typically requires costly vacuum evaporation systems. On the other hand, solution-processable polymeric counterparts generally luminesce at longer wavelengths due to larger delocalization in the chain. Blue light emission from solution-processed materials is therefore of unique technological significance. Here we report near-UV to blue photoluminescence (PL) from solution-processed graphene oxide (GO). The characteristics of the PL and its dependence on the reduction of GO indicates that it originates from the recombination of electron-hole (e-h) pairs localized within small sp2 carbon clusters embedded within an sp3 matrix. These results suggest that a sheet of graphene provides a parent structure on which fluorescent components can be chemically engineered without losing the macroscopic structural integrity. Our findings offer a unique route towards solution-processable opto-electronics devices with graphene. △ Less

Submitted 13 September, 2009; originally announced September 2009.

Comments: Accepted for publication in Adv. Mater

Insulator to semi-metal transition in graphene oxide

Authors: Goki Eda, Cecilia Mattevi, Hisato Yamaguchi, HoKwon Kim, Manish Chhowalla

Abstract: Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced… ▽ More Transport properties of progressively reduced graphene oxide (GO) are described. Evolution of the electronic properties reveals that as-synthesized GO undergoes insulator-semiconductor-semi-metal transitions with reduction. The apparent transport gap ranges from 10 ~ 50 meV and approaches zero with extensive reduction. Measurements at varying degrees of reduction reveal that transport in reduced GO occurs via variable-range hop** and further reduction leads to increased number of available hop** sites. △ Less

Submitted 18 May, 2009; originally announced May 2009.

Comments: 9 pages, 4 figures