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Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell
Abstract: We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical ph… ▽ More
Submitted 23 May, 2020; v1 submitted 23 February, 2020; originally announced February 2020.
Comments: 10 pages, 4 figures
Journal ref: Appl. Phys. Lett. (2020)