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Effect of do** of zinc oxide on the hole mobility of poly(3-hexylthiophene) in hybrid transistors
Authors:
Maria S. Hammer,
Carsten Deibel,
Jens Pflaum,
Vladimir Dyakonov
Abstract:
Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al do** between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. el…
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Hybrid field effect transistors based on the organic polymer poly(3-hexylthiophene) (P3HT) and inorganic zinc oxide were investigated. In this report we present one of the first studies on hybrid transistors employing one polymeric transport layer. The sol-gel processed ZnO was modified via Al do** between 0.8 and 10 at.%, which allows a systematic variation of the zinc oxide properties, i.e. electron mobility and morphology. With increasing do** level we observe on the one hand a decrease of the electron mobilities by two orders of magnitude,on the other hand do** enforces a morphological change of the zinc oxide layer which enables the infiltration of P3HT into the inorganic matrix. X-ray reflectivity (XRR) measurements confirm this significant change in the interface morphology for the various do** levels. We demonstrate that do** of ZnO is a tool to adjust the charge transport in ZnO/P3HT hybrids, using one single injecting metal (Au bottom contact) on a SiO2 dielectric. We observe an influence of the zinc oxide layer on the hole mobility in P3HT which we can modify via Al do** of ZnO. Hence, maximum hole mobility of 5e-4 cm^2/Vs in the hybrid system with 2 at.% Al do**. 5 at.% Al do** leads to a balanced mobility in the organic/inorganic hybrid system but also to a small on/off ratio due to high off-currents.
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Submitted 25 June, 2010;
originally announced June 2010.
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Charge Carrier Extraction by Linearly Increasing Voltage:Analytic framework and ambipolar transients
Authors:
Jens Lorrmann,
Bekele Homa Badada,
Olle Inganäs,
Vladimir Dyakonov,
Carsten Deibel
Abstract:
Up to now the basic theoretical description of charge extraction by linearly increasing voltage (CELIV) is solved for a low conductivity approximation only. Here we present the full analytical solution, thus generalize the theoretical framework for this method. We compare the analytical solution and the approximated theory, showing that especially for typical organic solar cell materials the latte…
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Up to now the basic theoretical description of charge extraction by linearly increasing voltage (CELIV) is solved for a low conductivity approximation only. Here we present the full analytical solution, thus generalize the theoretical framework for this method. We compare the analytical solution and the approximated theory, showing that especially for typical organic solar cell materials the latter approach has a very limited validity. Photo-CELIV measurements on poly(3-hexyl thiophene-2,5-diyl):[6,6]-phenyl-C61 butyric acid methyl ester based solar cells were then evaluated by fitting the current transients to the analytical solution. We found that the fit results are in a very good agreement with the experimental observations, if ambipolar transport is taken into account, the origin of which we will discuss. Furthermore we present parametric equations for the mobility and the charge carrier density, which can be applied over the entire experimental range of parameters.
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Submitted 29 October, 2010; v1 submitted 22 June, 2010;
originally announced June 2010.
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S-shaped current-voltage characteristics of organic solar devices
Authors:
A. Wagenpfahl,
D. Rauh,
M. Binder,
C. Deibel,
V. Dyakonov
Abstract:
Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an s-shaped deformation. We qualitatively produce this behaviour by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium tin oxide (ITO) anode. Restricted c…
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Measuring the current-voltage characteristic of organic bulk heterojunction solar devices sometimes reveals an s-shaped deformation. We qualitatively produce this behaviour by a numerical device simulation assuming a reduced surface recombination. Furthermore we show how to experimentally create these double diodes by applying an oxygen plasma etch on the indium tin oxide (ITO) anode. Restricted charge transport over material interfaces accumulates space charges and therefore creates s-shaped deformations. Finally we discuss the consequences of our findings for the open circuit voltage $V_{oc}$
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Submitted 10 September, 2010; v1 submitted 31 May, 2010;
originally announced May 2010.
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Polymer-Fullerene Bulk Heterojunction Solar Cells
Authors:
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Organic solar cells have the potential to be low-cost and efficient solar energy converters, with a promising energy balance. They are made from carbon-based semiconductors, which exhibit favourable light absorption and charge generation properties, and can be manufactured by low temperature processes such as printing from solvent-based inks, which are compatible with flexible plastic substrates o…
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Organic solar cells have the potential to be low-cost and efficient solar energy converters, with a promising energy balance. They are made from carbon-based semiconductors, which exhibit favourable light absorption and charge generation properties, and can be manufactured by low temperature processes such as printing from solvent-based inks, which are compatible with flexible plastic substrates or even paper. In this review, we will present an overview of the physical function of organic solar cells, their state-of-the-art performance and limitations, as well as novel concepts to achieve a better material stability and higher power conversion efficiencies. We will also briefly review processing and cost in view of the market potential.
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Submitted 30 August, 2010; v1 submitted 1 March, 2010;
originally announced March 2010.
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Polymeric Squaraine Dyes as Electron Donors in Bulk Heterojunction Solar Cells
Authors:
Sebastian F. Voelker,
Shinobu Uemura,
Moritz Limpinsel,
Markus Mingebach,
Carsten Deibel,
Vladimir Dyakonov,
Christoph Lambert
Abstract:
A polysquaraine low band gap polymer was synthesized by Yamamoto coupling of a monomeric dibromo indolenine squaraine dye. The resulting polymer has a weight average molar mass in the order of Mw ~30.000-50.000 and a polydispersity of ca. 1.7 as determined by gel-permeation chromatography (GPC). The electronic properties of monomer and polymer were investigated by cyclic voltammetry, absorption…
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A polysquaraine low band gap polymer was synthesized by Yamamoto coupling of a monomeric dibromo indolenine squaraine dye. The resulting polymer has a weight average molar mass in the order of Mw ~30.000-50.000 and a polydispersity of ca. 1.7 as determined by gel-permeation chromatography (GPC). The electronic properties of monomer and polymer were investigated by cyclic voltammetry, absorption and emission spectroscopy. Owing to exciton coupling the absorption bands of the polymer are red-shifted and strongly broadened compared to the monomer squaraine dye. Bulk heterojunction solar cells were prepared from blends of the polysquaraine with the fullerene derivative [6,6]-phenyl C61-butyric acid methyl ester (PCBM) in different weight ratios (1:3 to 1:1). The power conversion efficiencies under simulated AM 1.5 conditions yielded 0.45 % for these non-optimized systems. The external quantum efficiency (EQE) shows that the photoresponse spans the range from 300 to 850 nm, which illustrates the promising properties of this novel organic semiconductor as a low band gap donor material in organic photovoltaics.
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Submitted 18 February, 2010;
originally announced February 2010.
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Organic solar cell efficiencies under the aspect of reduced surface recombination velocities
Authors:
A. Wagenpfahl,
C. Deibel,
V. Dyakonov
Abstract:
The charge carrier mobility is a key parameter for the organic bulk heterojunction solar cell efficiency. It was recently shown that the interplay charge carrier transport and recombination, both depending on electron and hole mobilities, leads to a point of maximum power conversion efficiency at a finite mobility. Changes of bulk and surface recombination rate, however, can strongly influence t…
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The charge carrier mobility is a key parameter for the organic bulk heterojunction solar cell efficiency. It was recently shown that the interplay charge carrier transport and recombination, both depending on electron and hole mobilities, leads to a point of maximum power conversion efficiency at a finite mobility. Changes of bulk and surface recombination rate, however, can strongly influence this behavior. These processes were previously not considered adequately, as surface recombination velocities of infinity were implicitly assumed or bulk recombination parameters not discussed in detail. In this manuscript, using a macroscopic effective medium simulation, we consider how a reduced bulk recombination process in combination with finite surface recombination velocities affect the power conversion efficiency. Instead of a maximum efficiency at a specific charge carrier mobility, we show that with realistic assumptions and passivated surfaces the efficiency is increased further, saturating only at higher mobilities. Thus, a mobility optimisation is more important for the solar cell performance then previously shown.
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Submitted 16 February, 2010; v1 submitted 27 January, 2010;
originally announced January 2010.
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Investigation of the Photocurrent in Bulk Heterojunction Solar Cells
Authors:
M. Limpinsel,
A. Wagenpfahl,
M. Mingebach,
C. Deibel,
V. Dyakonov
Abstract:
We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C$_{61}$ butyric acid methyl ester (PCBM) solar cells by applying a pulsed measurement technique. For annealed samples, a point of optimal symmetry (POS) with a corresponding voltage $V_\text{POS}$ of 0.52--0.64 V could be determined. Based on macroscopic simulations and results from capacitance--voltage meas…
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We investigated the photocurrent in poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C$_{61}$ butyric acid methyl ester (PCBM) solar cells by applying a pulsed measurement technique. For annealed samples, a point of optimal symmetry (POS) with a corresponding voltage $V_\text{POS}$ of 0.52--0.64 V could be determined. Based on macroscopic simulations and results from capacitance--voltage measurements, we identify this voltage with flat band conditions in the bulk of the cell, but not the built-in voltage as proposed by [Ooi et al., J. Mater. Chem. 18 (2008) 1644]. We calculated the field dependent polaron pair dissociation after Onsager--Braun and the voltage dependent extraction of charge carriers after Sokel and Hughes with respect to this point of symmetry. Our analysis allows to explain the experimental photocurrent in both forward and reverse directions. Also, we observed a voltage--independent offset of the photocurrent. As this offset is crucial for the device performance, we investigated its dependence on cathode material and thermal treatment. From our considerations we gain new insight into the photocurrent`s voltage dependence and the limitations of device efficiency.
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Submitted 14 January, 2010;
originally announced January 2010.
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Energetics of Excited States in the Conjugated Polymer Poly(3-hexylthiophene)
Authors:
Carsten Deibel,
Daniel Mack,
Julien Gorenflot,
Achim Schoell,
Stefan Krause,
Friedrich Reinert,
Daniel Rauh,
Vladimir Dyakonov
Abstract:
There is an enormous potential in applying conjugated polymers in novel organic opto-electronic devices such as light emitting diodes and solar cells. Although prototypes and first products exist, a comprehensive understanding of the fundamental processes and energetics involved during photoexcitation is still lacking and limits further device optimisations. Here we report on a unique analysis o…
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There is an enormous potential in applying conjugated polymers in novel organic opto-electronic devices such as light emitting diodes and solar cells. Although prototypes and first products exist, a comprehensive understanding of the fundamental processes and energetics involved during photoexcitation is still lacking and limits further device optimisations. Here we report on a unique analysis of the excited states involved in charge generation by photoexcitation. On the model system poly(3-hexylthiophene) (P3HT), we demonstrate the general applicability of our novel approach. From photoemission spectroscopy of occupied and unoccupied states we determine the transport gap to 2.6 eV, which we show to be in agreement with the onset of photoconductivity by spectrally resolved photocurrent measurements. For photogenerated singlet exciton at the absorption edge, 0.7 eV of excess energy are required to overcome the binding energy; the intermediate charge transfer state is situated only 0.3 eV above the singlet exciton. Our results give direct evidence of energy levels involved in the photogeneration and charge transport within conjugated polymers.
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Submitted 13 January, 2010;
originally announced January 2010.
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Three terminal capacitance technique for magnetostriction and thermal expansion measurements
Authors:
B. Kundys,
Yu. Bukhantsev,
S. Vasiliev,
D. Kundys,
M. Berkowski,
V. P. Dyakonov
Abstract:
An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investig…
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An instrument has been constructed to measure a large range of magnetostriction and thermal expansion between room temperature and 4 K in a superconductive split-coil magnet, that allows investigation in magnetic fields up to 12 T. The very small bulk samples (up to 1 mm in size) as well as big ones (up to 13 mm) of the irregular form can be measured. The possibility of magnetostriction investigation in thin films is shown. A general account is given of both electrical and the mechanical aspects of the design of capacitance cell and their associated electronic circuitry. A simple lever device is proposed to increase the sensitivity twice. The resulting obtained sensitivity can be 0.5 Angstrom. The performance of the technique is illustrated by some preliminary measurements of the magnetostriction of superconducting MgB2, thermal expansion of (La0.8Ba0.2)0.93MnO3 single crystal and magnetoelastic behavior of the Ni/Si(111) and La0.7Sr0.3CoO3/SAT0.7CAT0.1LA0.2(001) cantilevers.
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Submitted 18 October, 2009;
originally announced October 2009.
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Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells
Authors:
C. Deibel,
A. Baumann,
A. Wagenpfahl,
V. Dyakonov
Abstract:
The major loss mechanism of photogenerated polarons was investigated in P3HT:PCBM solar cells by the photo-CELIV technique. For pristine and annealed devices, we find that the experimental data can be explained by a bimolecular recombination rate reduced by a factor of about ten (pristine) and 25 (annealed) as compared to Langevin theory. Aided by a macroscopic device model, we discuss the impli…
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The major loss mechanism of photogenerated polarons was investigated in P3HT:PCBM solar cells by the photo-CELIV technique. For pristine and annealed devices, we find that the experimental data can be explained by a bimolecular recombination rate reduced by a factor of about ten (pristine) and 25 (annealed) as compared to Langevin theory. Aided by a macroscopic device model, we discuss the implications of the lowered loss rate on the characteristics of polymer:fullerene solar cells.
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Submitted 15 July, 2009;
originally announced July 2009.
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Origin of Reduced Polaron Recombination in Organic Semiconductor Devices
Authors:
C. Deibel,
A. Wagenpfahl,
V. Dyakonov
Abstract:
We propose a model to explain the reduced bimolecular recombination rate found in state-of-the-art bulk heterojunction solar cells. When compared to the Langevin recombination, the experimentally observed rate is one to four orders of magnitude lower, but gets closer to the Langevin case for low temperatures. Our model considers the organic solar cell as device with carrier concentration gradien…
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We propose a model to explain the reduced bimolecular recombination rate found in state-of-the-art bulk heterojunction solar cells. When compared to the Langevin recombination, the experimentally observed rate is one to four orders of magnitude lower, but gets closer to the Langevin case for low temperatures. Our model considers the organic solar cell as device with carrier concentration gradients, which form due to the electrode/blend/electrode device configuration. The resulting electron concentration under working conditions of a solar cell is higher at the cathode than at the anode, and vice versa for holes. Therefore, the spatially dependent bimolecular recombination rate, proportional to the local product of electron and hole concentration, is much lower as compared to the calculation of the recombination rate based on the extracted and thus averaged charge carrier concentrations. We consider also the temperature dependence of the recombination rate, which can for the first time be described with our model.
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Submitted 14 July, 2009;
originally announced July 2009.
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Charge Carrier Concentration and Temperature Dependent Recombination in Polymer Fullerene Solar Cells
Authors:
A. Foertig,
A. Baumann,
D. Rauh,
V. Dyakonov,
C. Deibel
Abstract:
We performed temperature dependent transient photovoltage and photocurrent measurements on poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methylester bulk heterojuction solar cells. We found a strongly charge carrier concentration and temperature dependent Langevin recombination prefactor. The observed recombination mechanism is discussed in terms of bimolecular recombination. The experime…
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We performed temperature dependent transient photovoltage and photocurrent measurements on poly(3-hexylthiophene):[6,6]-phenyl-C61 butyric acid methylester bulk heterojuction solar cells. We found a strongly charge carrier concentration and temperature dependent Langevin recombination prefactor. The observed recombination mechanism is discussed in terms of bimolecular recombination. The experimental results were compared with charge carrier extraction by linearly increasing voltage (photo-CELIV) measurements done on the same blend system. We explain the charge carrier dynamics, following an apparent order larger than two, by dynamic trap** of charges in the tail states of the gaussian density of states.
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Submitted 8 July, 2009;
originally announced July 2009.
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Origin of the Efficient Polaron Pair Dissociation in Polymer--Fullerene Blends
Authors:
C. Deibel,
T. Strobel,
V. Dyakonov
Abstract:
The separation of photogenerated polaron pairs in organic bulk heterojunction solar cells is the intermediate but crucial step between exciton dissociation and charge transport to the electrodes. In state-of-the-art devices, above 80% of all polaron pairs are separated at fields of below $10^7$V/m. In contrast, considering just the Coulomb binding of the polaron pair, electric fields above…
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The separation of photogenerated polaron pairs in organic bulk heterojunction solar cells is the intermediate but crucial step between exciton dissociation and charge transport to the electrodes. In state-of-the-art devices, above 80% of all polaron pairs are separated at fields of below $10^7$V/m. In contrast, considering just the Coulomb binding of the polaron pair, electric fields above $10^8$V/m would be needed to reach similar yields. In order to resolve this discrepancy, we performed kinetic Monte Carlo simulations of polaron pair dissociation in donor--acceptor blends, considering delocalised charge carriers along conjugated polymer chain segments. We show that the resulting fast local charge carrier transport can indeed explain the high experimental quantum yields in polymer solar cells.
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Submitted 16 July, 2009; v1 submitted 13 June, 2009;
originally announced June 2009.
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Effect of do**-- and field--induced charge carrier density on the electron transport in nanocrystalline ZnO
Authors:
Maria S Hammer,
Daniel Rauh,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable do** level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the dop…
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Charge transport properties of thin films of sol--gel processed undoped and Al-doped zinc oxide nanoparticles with variable do** level between 0.8 at% and 10 at% were investigated. The X-ray diffraction studies revealed a decrease of the average crystallite sizes in highly doped samples. We provide estimates of the conductivity and the resulting charge carrier densities with respect to the do** level. The increase of charge carrier density due to extrinsic do** were compared to the accumulation of charge carriers in field effect transistor structures. This allowed to assess the scattering effects due to extrinsic do** on the electron mobility. The latter decreases from 4.6*10^-3 cm^2/Vs to 4.5*10^-4 cm^2/Vs with increasing do** density. In contrast, the accumulation leads to an increasing mobility up to 1.5*10^-2 cm^2/Vs. The potential barrier heights related to grain boundaries between the crystallites were derived from temperature dependent mobility measurements. The extrinsic do** initially leads to a grain boundary barrier height lowering, followed by an increase due to do**-induced structural defects. We conclude that the conductivity of sol--gel processed nanocrystalline ZnO:Al is governed by an interplay of the enhanced charge carrier density and the do**-induced charge carrier scattering effects, achieving a maximum at 0.8 at% in our case.
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Submitted 12 November, 2008;
originally announced November 2008.
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Bipolar Charge Transport in Poly(3-hexyl thiophene)/Methanofullerene Blends: A Ratio Dependent Study
Authors:
A. Baumann,
J. Lorrmann,
C. Deibel,
V. Dyakonov
Abstract:
We investigated the charge carrier mobility in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) blend devices by applying the time resolved photoconductivity experiment in dependence on the donor:acceptor ratio. We observe a bipolar transport in all studied samples ranging from pure polymer to polymer:fullerene with 90% PCBM content. For the rati…
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We investigated the charge carrier mobility in pristine poly(3-hexyl thiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61 butyric acid methyl ester (PCBM) blend devices by applying the time resolved photoconductivity experiment in dependence on the donor:acceptor ratio. We observe a bipolar transport in all studied samples ranging from pure polymer to polymer:fullerene with 90% PCBM content. For the ratios P3HT:PCBM 1:4 and 1:1 we observe two transit times in the electron current transients, as well as hole double transients for P3HT:PCBM 1:2. We find high hole and electron mobilities in the order of 10^(-3) - 10^(-2) cm^2/Vs for a concentration of 90% PCBM in the blend.
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Submitted 23 December, 2008; v1 submitted 30 October, 2008;
originally announced October 2008.
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Trap Distribution and the Impact of Oxygen-induced Traps on the Charge Transport in Poly(3-Hexylthiophene)
Authors:
Julia Schafferhans,
Andreas Baumann,
Carsten Deibel,
Vladimir Dyakonov
Abstract:
The trap distribution in the conjugated polymer poly(3-hexylthiophene) was investigated by fractional thermally stimulated current measurements. Two defect states with activation energies of about 50 meV and 105 meV and Gaussian energy distributions were revealed. The first is assigned to the tail of the intrinsic density of states, whereas the concentration of second trap is directly related to…
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The trap distribution in the conjugated polymer poly(3-hexylthiophene) was investigated by fractional thermally stimulated current measurements. Two defect states with activation energies of about 50 meV and 105 meV and Gaussian energy distributions were revealed. The first is assigned to the tail of the intrinsic density of states, whereas the concentration of second trap is directly related to oxygen exposure. The impact of the oxygen induced traps on the charge transport was examined by performing photo-induced charge carrier extraction by linearly increasing voltage measurements, that exhibited a strong decrease in the mobility with air exposure time.
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Submitted 20 October, 2008;
originally announced October 2008.
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Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells
Authors:
C. Deibel,
A. Baumann,
V. Dyakonov
Abstract:
We determined the dominant polaron recombination loss mechanism in pristine and annealed polythiophene:fullerene blend solar cells by applying the photo-induced charge extraction by linearly increasing voltage (photo-CELIV) method in dependence on temperature. In pristine samples, we find a strongly temperature dependent bimolecular polaron recombination rate, which is reduced as compared to the…
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We determined the dominant polaron recombination loss mechanism in pristine and annealed polythiophene:fullerene blend solar cells by applying the photo-induced charge extraction by linearly increasing voltage (photo-CELIV) method in dependence on temperature. In pristine samples, we find a strongly temperature dependent bimolecular polaron recombination rate, which is reduced as compared to the Langevin theory. For the annealed sample, we observe a polaron decay rate which follows a third order of carrier concentration almost temperature independently.
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Submitted 30 October, 2008; v1 submitted 2 October, 2008;
originally announced October 2008.
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Influence of Charge Carrier Mobility on the Performance of Organic Solar Cells
Authors:
C. Deibel,
A. Wagenpfahl,
V. Dyakonov
Abstract:
The power conversion efficiency of organic solar cells based on donor--acceptor blends is governed by an interplay of polaron pair dissociation and bimolecular polaron recombination. Both processes are strongly dependent on the charge carrier mobility, the dissociation increasing with faster charge transport, with raised recombination losses at the same time. Using a macroscopic effective medium…
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The power conversion efficiency of organic solar cells based on donor--acceptor blends is governed by an interplay of polaron pair dissociation and bimolecular polaron recombination. Both processes are strongly dependent on the charge carrier mobility, the dissociation increasing with faster charge transport, with raised recombination losses at the same time. Using a macroscopic effective medium simulation, we calculate the optimum charge carrier mobility for the highest power conversion efficiency, for the first time accounting for injection barriers and a reduced Langevin-type recombination. An enhancement of the charge carrier mobility from $10^{-8}$m$^2$/Vs for state of the art polymer:fullerene solar cells to about $10^{-6}$m$^2$/Vs, which yields the maximum efficiency, corresponds to an improvement of only about 20% for the given parameter set.
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Submitted 18 June, 2008; v1 submitted 13 June, 2008;
originally announced June 2008.
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Sonnenstrom aus Plastik
Authors:
Carsten Deibel,
Vladimir Dyakonov
Abstract:
Inspired by the success of organic light emitting diodes, organic solar cells have the potential to establish interesting applications, complementing and enhancing the application range of inorganic systems.
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Durch den Erfolg organischer Leuchtdioden beflügelt, entwickeln sich auch organische Solarzellen zu interessanten Anwendungen, welche das Potential haben, die Anwendungsbereiche an…
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Inspired by the success of organic light emitting diodes, organic solar cells have the potential to establish interesting applications, complementing and enhancing the application range of inorganic systems.
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Durch den Erfolg organischer Leuchtdioden beflügelt, entwickeln sich auch organische Solarzellen zu interessanten Anwendungen, welche das Potential haben, die Anwendungsbereiche anorganischer Systeme zu ergänzen und erweitern.
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Submitted 2 May, 2008;
originally announced May 2008.
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Spectroscopy of electronic defect states in Cu(In, Ga)(S, Se)$_2$-based heterojunctions and Schottky diodes under damp-heat exposure
Authors:
C. Deibel,
V. Dyakonov,
J. Parisi
Abstract:
The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky devices to extended damp heat exposure at 85$^{\circ}$C ambient temperature and 85% relative humidity for various time periods. In order to understand the or…
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The changes of defect characteristics induced by accelerated lifetime tests on the heterostructure n-ZnO/i-ZnO/CdS/Cu(In, Ga)(S, Se)$_2$/Mo relevant for photovoltaic energy conversion are investigated. We subject heterojunction and Schottky devices to extended damp heat exposure at 85$^{\circ}$C ambient temperature and 85% relative humidity for various time periods. In order to understand the origin of the pronounced changes of the devices, we apply current--voltage and capacitance--voltage measurements, admittance spectroscopy, and deep-level transient spectroscopy. The fill factor and open-circuit voltage of test devices are reduced after prolonged damp heat treatment, leading to a reduced energy conversion efficiency. We observe the presence of defect states in the vicinity of the CdS/chalcopyrite interface. Their activation energy increases due to damp heat exposure, indicating a reduced band bending at the Cu(In, Ga)(S, Se)$_2$ surface. The Fermi-level pinning at the buffer/chalcopyrite interface, maintaining a high band bending in as-grown cells, is lifted due to the damp-heat exposure. We also observe changes in the bulk defect spectra due to the damp-heat treatment.
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Submitted 18 December, 2007;
originally announced December 2007.
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Band Bending Independent of Surface Passivation in ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ Heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky Contacts
Authors:
C. Deibel,
V. Dyakonov,
J. Parisi
Abstract:
We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shif…
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We have employed admittance spectroscopy and deep-level transient spectroscopy in order to investigate the electronic properties of ZnO/CdS/Cu(In,Ga)(S,Se)$_2$ heterojunctions and Cr/Cu(In,Ga)(S,Se)$_2$ Schottky contacts. Our work concentrates on the origin of an energy-distributed defect state commonly found in these systems. The activation energy of the defect state addressed continuously shifts upon air annealing or damp-heat treatment and is a valuable measure of the degree of band bending in Cu(In,Ga)(S,Se)$_2$-based junctions. We demonstrate that the band bending within the Cu(In,Ga)(S,Se)$_2$ layer, reported in the literature to become minimal after air exposure, returns after the formation of either a Schottky contact or a heterojunction. The earlier phenomenon turns out to be independent of a surface passivation due to the CdS bath deposition.
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Submitted 15 December, 2007;
originally announced December 2007.
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Diagrammatic method for theory of magnetic and resistive properties of manganites
Authors:
E. E. Zubov,
V. P. Dyakonov
Abstract:
Effective field theory of magnetic and resistive properties of manganites with account of strong Hund exchange coupling and electron-phonon interactions has been evolved under the strong Hund coupling condition. In parallel with Lang-Firsov unitary transformation of the zeroth Hamiltonian, we have realized the diagonalization of Hund's Hamiltonian neglecting the upper triplet. The diagram techni…
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Effective field theory of magnetic and resistive properties of manganites with account of strong Hund exchange coupling and electron-phonon interactions has been evolved under the strong Hund coupling condition. In parallel with Lang-Firsov unitary transformation of the zeroth Hamiltonian, we have realized the diagonalization of Hund's Hamiltonian neglecting the upper triplet. The diagram techniques taking into account the quantum spin fluctuations of lower quintet and hole state with spin S=3/2 was developed. The magnetic structure of the ground state and an influence of electron-phonon interaction have been analyzed using the first nonvanishing approximation of perturbation theory. The calculated temperature dependence of resistivity agrees well with experimental data including these obtained in applied magnetic field.
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Submitted 14 September, 2005;
originally announced September 2005.
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Anomalous acoustoelectric effect in La_{0.67}Ca_{0.33}MnO_{3} films
Authors:
Y. Ilisavskii,
A. Goltsev,
K. Dyakonov,
V. Popov,
E. Yakhkind,
V. P. Dyakonov,
P. Gierlowski,
A. Klimov,
S. J. Lewandowski,
H. Szymczak
Abstract:
We have studied acoustoelectric (AE) effect produced by surface acoustic waves (SAW) in a monolithic layered structure, composed of piezodielectric LiNbO_{3} substrate and La_{0.67}Ca_{0.33}MnO_{3} film. The experiments unexpectedly revealed in the longitudinal AE effect an anomalous contribution, invariant upon reversal of SAW propagation, which coexists with the ordinary (odd in wave vector) e…
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We have studied acoustoelectric (AE) effect produced by surface acoustic waves (SAW) in a monolithic layered structure, composed of piezodielectric LiNbO_{3} substrate and La_{0.67}Ca_{0.33}MnO_{3} film. The experiments unexpectedly revealed in the longitudinal AE effect an anomalous contribution, invariant upon reversal of SAW propagation, which coexists with the ordinary (odd in wave vector) effect. The anomalous effect dominates near the metal-insulator transition, while the ordinary effect prevails at high and low temperatures. We show that the anomalous effect is caused by strong modulation of the film conductivity produced by the SAW elastic deformations.
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Submitted 19 October, 2001;
originally announced October 2001.
