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Photoinduced Spin Centers in Photocatalytic Metal-Organic Framework UiO-66
Authors:
Anastasiia Kultaeva,
Timur Biktagirov,
Andreas Sperlich,
Patrick Dörflinger,
Mauricio E. Calvo,
Eugenio Otal,
Vladimir Dyakonov
Abstract:
Metal-organic frameworks (MOFs) are promising candidates for the advanced photocatalytic active materials. These porous crystalline compounds have large active surface area and structural tunability, highly competitive with oxides, the well-established material class for the photocatalysis. However, due to their complex organic and coordination chemistry composition, photophysical mechanisms invol…
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Metal-organic frameworks (MOFs) are promising candidates for the advanced photocatalytic active materials. These porous crystalline compounds have large active surface area and structural tunability, highly competitive with oxides, the well-established material class for the photocatalysis. However, due to their complex organic and coordination chemistry composition, photophysical mechanisms involved in the photocatalytic process in MOFs are still not well understood. Employing electron paramagnetic resonance (EPR) spectroscopy, we investigate the fundamental processes of electron and hole generation, as well as capture events that lead to the formation of various radical species in UiO-66, an archetypical MOF photocatalyst. As a result, we detected a manifold of photoinduced electron spin centers, which we subsequently analyzed and identified with the help of density-functional theory (DFT) calculations. Our findings provide new insights into the photo-induced charge transfer processes, which are the basis of photocatalytic activity in UiO-66. This sets the stage for further studies on photogenerated spin centers in this and similar MOF materials.
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Submitted 23 April, 2024;
originally announced April 2024.
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Onset of Spin Entanglement in Doped Carbon Nanotubes Studied by EPR
Authors:
Andreas Sperlich,
Klaus H. Eckstein,
Florian Oberndorfer,
Bernd K. Sturzda,
Michael Auth,
Vladimir Dyakonov,
Roland Mitric,
Tobias Hertel
Abstract:
Nanoscale semiconductors with isolated spin impurities have been touted as promising materials for their potential use at the intersection of quantum, spin, and information technologies. Electron paramagnetic resonance (EPR) studies of spins in semiconducting carbon nanotubes have overwhelmingly focused on spins more strongly localized by $\rm sp^3$-type lattice defects. However, the creation of s…
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Nanoscale semiconductors with isolated spin impurities have been touted as promising materials for their potential use at the intersection of quantum, spin, and information technologies. Electron paramagnetic resonance (EPR) studies of spins in semiconducting carbon nanotubes have overwhelmingly focused on spins more strongly localized by $\rm sp^3$-type lattice defects. However, the creation of such impurities is irreversible and requires specific reactions to generate them. Shallow charge impurities, on the other hand, are more readily and widely produced by simple redox chemistry, but have not yet been investigated for their spin properties. Here we use EPR to study p-doped (6,5) semiconducting single-wall carbon nanotubes (s-SWNTs) and elucidate the role of impurity-impurity interactions in conjunction with exchange and correlation effects for the spin behavior of this material. A quantitative comparison of the EPR signals with phenomenological modeling combined with configuration interaction electronic structure calculations of impurity pairs shows that orbital overlap, combined with exchange and correlation effects, causes the EPR signal to disappear due to spin entanglement for do** levels corresponding to impurity spacings of $14\,\rm nm$ (at 30 K). This transition is predicted to shift to higher do** levels with increasing temperature and to lower levels with increasing screening, providing an opportunity for improved spin control in doped s-SWNTs.
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Submitted 8 March, 2024;
originally announced March 2024.
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Observation of nonlinear fractal higher-order topological insulator
Authors:
Victor O. Kompanets,
Hua Zhong,
Yiqi Zhang,
Yaroslav V. Kartashov,
Yongdong Li,
Sergei A. Zhuravitskii,
Nikolay N. Skryabin,
Ivan V. Dyakonov,
Alexander A. Kalinkin,
Sergei P. Kulik,
Sergey V. Chekalin,
Victor N. Zadkov
Abstract:
Higher-order topological insulators (HOTIs) are unique materials hosting topologically protected states, whose dimensionality is at least by a factor of 2 lower than that of the bulk. Topological states in such insulators may be strongly confined in their corners that leads to considerable enhancement of nonlinear processes involving such states. However, all nonlinear HOTIs demonstrated so far we…
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Higher-order topological insulators (HOTIs) are unique materials hosting topologically protected states, whose dimensionality is at least by a factor of 2 lower than that of the bulk. Topological states in such insulators may be strongly confined in their corners that leads to considerable enhancement of nonlinear processes involving such states. However, all nonlinear HOTIs demonstrated so far were built on periodic bulk lattice materials. Here we demonstrate first \textit{nonlinear photonic} HOTI with the fractal origin. Despite their fractional effective dimensionality, the HOTIs constructed here on two different types of the Sierpiński gasket waveguide arrays, may support topological corner states for unexpectedly wide range of coupling strengths, even in parameter regions where conventional HOTIs become trivial. We demonstrate thresholdless solitons bifurcating from corner states in nonlinear fractal HOTIs and show that their localization can be efficiently controlled by the input beam power. We observe sharp differences in nonlinear light localization on outer and multiple inner corners and edges representative for these fractal materials. Our findings not only represent a new paradigm for nonlinear topological insulators, but also open new avenues for potential applications of fractal materials to control the light flow.
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Submitted 2 February, 2024;
originally announced February 2024.
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Room-Temperature Silicon Carbide Maser: Unveiling Quantum Amplification and Cooling
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Valentin Baianov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even above room temperature. The SiC maser's broad linewidth showcases its potential as an exceptional preamplifier, displaying measured gain surpassing 10dB and si…
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We present the very first demonstration of a maser utilizing silicon vacancies (VSi) within 4H silicon carbide (SiC). Leveraging an innovative feedback-loop technique, we elevate the resonator's quality factor, enabling maser operation even above room temperature. The SiC maser's broad linewidth showcases its potential as an exceptional preamplifier, displaying measured gain surpassing 10dB and simulations indicating potential amplification exceeding 30dB. By exploiting the relatively small zero-field splitting (ZFS) of VSi in SiC, the amplifier can be switched into an optically-pumped microwave photon absorber, reducing the resonator's mode temperature by 35 K below operating conditions. This breakthrough holds promise for quantum computing advancements and fundamental studies in cavity quantum electrodynamics. Our findings highlight SiC's transformative potential in revolutionizing contemporary microwave technologies.
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Submitted 13 December, 2023;
originally announced December 2023.
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Error mitigated variational algorithm on a photonic processor
Authors:
O. V. Borzenkova,
G. I. Struchalin,
I. Kondratyev,
A. Moiseevskiy,
I. V. Dyakonov,
S. S. Straupe
Abstract:
We demonstrate successful error mitigation of indistinguishability-related noise in a quantum photonic processor. We apply zero-noise extrapolation (ZNE) technique to a variational quantum eigensolver (VQE). The observable values measured at two-different error levels allow us to extrapolate it towards noise-free regime. We study influence of the partial distinguishability of photons in a two-qubi…
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We demonstrate successful error mitigation of indistinguishability-related noise in a quantum photonic processor. We apply zero-noise extrapolation (ZNE) technique to a variational quantum eigensolver (VQE). The observable values measured at two-different error levels allow us to extrapolate it towards noise-free regime. We study influence of the partial distinguishability of photons in a two-qubit processor which implements the VQE for a Schwinger Hamiltonian. The results evidence the improvement of the Hamiltonian eigenvalue estimation using the ZNE procedure. Lastly, we analyze potential applicability of this error mitigation method to other linear optical processors with externally controlled polarization.
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Submitted 23 November, 2023;
originally announced November 2023.
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Ultralong-term high-density data storage with atomic defects in SiC
Authors:
M. Hollenbach,
C. Kasper,
D. Erb,
L. Bischoff,
G. Hlawacek,
H. Kraus,
W. Kada,
T. Ohshima,
M. Helm,
S. Facsko,
V. Dyakonov,
G. V. Astakhov
Abstract:
There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we…
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There is an urgent need to increase the global data storage capacity, as current approaches lag behind the exponential growth of data generation driven by the Internet, social media and cloud technologies. In addition to increasing storage density, new solutions should provide long-term data archiving that goes far beyond traditional magnetic memory, optical disks and solid-state drives. Here, we propose a concept of energy-efficient, ultralong, high-density data archiving based on optically active atomic-size defects in a radiation resistance material, silicon carbide (SiC). The information is written in these defects by focused ion beams and read using photoluminescence or cathodoluminescence. The temperature-dependent deactivation of these defects suggests a retention time minimum over a few generations under ambient conditions. With near-infrared laser excitation, grayscale encoding and multi-layer data storage, the areal density corresponds to that of Blu-ray discs. Furthermore, we demonstrate that the areal density limitation of conventional optical data storage media due to the light diffraction can be overcome by focused electron-beam excitation.
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Submitted 28 October, 2023;
originally announced October 2023.
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Learning the tensor network model of a quantum state using a few single-qubit measurements
Authors:
Sergei S. Kuzmin,
Varvara I. Mikhailova,
Ivan V. Dyakonov,
Stanislav S. Straupe
Abstract:
The constantly increasing dimensionality of artificial quantum systems demands for highly efficient methods for their characterization and benchmarking. Conventional quantum tomography fails for larger systems due to the exponential growth of the required number of measurements. The conceptual solution for this dimensionality curse relies on a simple idea - a complete description of a quantum stat…
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The constantly increasing dimensionality of artificial quantum systems demands for highly efficient methods for their characterization and benchmarking. Conventional quantum tomography fails for larger systems due to the exponential growth of the required number of measurements. The conceptual solution for this dimensionality curse relies on a simple idea - a complete description of a quantum state is excessive and can be discarded in favor of experimentally accessible information about the system. The probably approximately correct (PAC) learning theory has been recently successfully applied to a problem of building accurate predictors for the measurement outcomes using a dataset which scales only linearly with the number of qubits. Here we present a constructive and numerically efficient protocol which learns a tensor network model of an unknown quantum system. We discuss the limitations and the scalability of the proposed method.
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Submitted 1 September, 2023;
originally announced September 2023.
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Large-scale error-tolerant programmable interferometer fabricated by femtosecond laser writing
Authors:
Ilya V. Kondratyev,
Veronika V. Ivanova,
Sergey A. Zhuravitskii,
Artem S. Argenchiev,
Nikolay N. Skryabin,
Ivan V. Dyakonov,
Suren A. Fldzhyan,
Mikhail Yu. Saygin,
Stanislav S. Straupe,
Alexander A. Korneev,
Sergei P. Kulik
Abstract:
We introduce a programmable 8-port interferometer with the recently proposed error-tolerant architecture capable of performing a broad class of transformations. The interferometer has been fabricated with femtosecond laser writing and it is the largest programmable interferometer of this kind to date. We have demonstrated its advantageous error tolerance by showing an operation in a broad waveleng…
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We introduce a programmable 8-port interferometer with the recently proposed error-tolerant architecture capable of performing a broad class of transformations. The interferometer has been fabricated with femtosecond laser writing and it is the largest programmable interferometer of this kind to date. We have demonstrated its advantageous error tolerance by showing an operation in a broad wavelength range from $920$ to $980$ nm, which is particularly relevant for quantum photonics due to efficient photon sources. Our work highlights the importance of develo** novel architectures of programmable photonics for information processing.
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Submitted 25 August, 2023;
originally announced August 2023.
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Macroscopic Zeno effect in Su-Schrieffer-Heeger photonic topological insulator
Authors:
S. K. Ivanov,
S. A. Zhuravitskii,
N. N. Skryabin,
I. V. Dyakonov,
A. A. Kalinkin,
S. P. Kulik,
Y. V. Kartashov,
V. V. Konotop,
V. N. Zadkov
Abstract:
The quantum Zeno effect refers to slowing down of the decay of a quantum system that is affected by frequent measurements. Nowadays, the significance of this paradigm is extended far beyond quantum systems, where it was introduced, finding physical and mathematical analogies in such phenomena as the suppression of output beam decay by sufficiently strong absorption introduced in guiding optical sy…
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The quantum Zeno effect refers to slowing down of the decay of a quantum system that is affected by frequent measurements. Nowadays, the significance of this paradigm is extended far beyond quantum systems, where it was introduced, finding physical and mathematical analogies in such phenomena as the suppression of output beam decay by sufficiently strong absorption introduced in guiding optical systems. In the latter case, the effect is often termed as macroscopic Zeno effect. Recent studies in optics, where enhanced transparency of the entire system was observed upon the increase of the absorption, were largely focused on the systems obeying parity-time symmetry, hence, the observed effect was attributed to the symmetry breaking. While manifesting certain similarities in the behavior of the transparency of the system with the mentioned studies, the macroscopic Zeno phenomenon reported here in topological photonic system is far more general in nature. In particular, we show that it does not require the existence of exceptional points, and that it is based on the suppression of decay for only a subspace of modes that can propagate in the system, alike the quantum Zeno dynamics. By introducing controlled losses in one of the arms of a topological insulator comprising two closely positioned Su-Schrieffer-Heeger arrays, we demonstrate the macroscopic Zeno effect, which manifests itself in an increase of the transparency of the system with respect to the topological modes created at the interface between two arrays. The phenomenon remains robust against disorder in the non-Hermitian topological regime. In contrast, coupling a topological array with a non-topological one results in a monotonic decrease in output power with increasing absorption.
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Submitted 1 August, 2023;
originally announced August 2023.
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Observation of $π$ solitons in oscillating waveguide arrays
Authors:
Antonina A. Arkhipova,
Yiqi Zhang,
Yaroslav V. Kartashov,
Sergei A. Zhuravitskii,
Nikolay N. Skryabin,
Ivan V. Dyakonov,
Alexander A. Kalinkin,
Sergei P. Kulik,
Victor O. Kompanets,
Sergey V. Chekalin,
Victor N. Zadkov
Abstract:
Floquet systems with periodically varying in time parameters enable realization of unconventional topological phases that do not exist in static systems with constant parameters and that are frequently accompanied by appearance of novel types of the topological states. Among such Floquet systems are the Su-Schrieffer-Heeger lattices with periodically-modulated couplings that can support at their e…
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Floquet systems with periodically varying in time parameters enable realization of unconventional topological phases that do not exist in static systems with constant parameters and that are frequently accompanied by appearance of novel types of the topological states. Among such Floquet systems are the Su-Schrieffer-Heeger lattices with periodically-modulated couplings that can support at their edges anomalous $π$ modes of topological origin despite the fact that the lattice spends only half of the evolution period in topologically nontrivial phase, while during other half-period it is topologically trivial. Here, using Su-Schrieffer-Heeger arrays composed from periodically oscillating waveguides inscribed in transparent nonlinear optical medium, we report experimental observation of photonic anomalous $π$ modes residing at the edge or in the corner of the one- or two-dimensional arrays, respectively, and demonstrate a new class of topological $π$ solitons bifurcating from such modes in the topological gap of the Floquet spectrum at high powers. $π$ solitons reported here are strongly oscillating nonlinear Floquet states exactly reproducing their profiles after each longitudinal period of the structure. They can be dynamically stable in both one- and two-dimensional oscillating waveguide arrays, the latter ones representing the first realization of the Floquet photonic higher-order topological insulator, while localization properties of such $π$ solitons are determined by their power.
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Submitted 24 July, 2023;
originally announced July 2023.
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Observation of rotation-induced light localization in waveguide arrays
Authors:
Chunyan Li,
Antonina A. Arkhipova,
Yaroslav V. Kartashov,
Sergey A. Zhuravitskii,
Nikolay N. Skryabin,
Ivan V. Dyakonov,
Alexander A. Kalinkin,
Sergey P. Kulik,
Victor O. Kompanets,
Sergey V. Chekalin,
Victor N. Zadkov
Abstract:
We study both, experimentally and theoretically, propagation of light in the fs-laser written rotating square waveguide arrays and present the first experimental evidence of light localization induced by the rotation of periodic structure in the direction of light propagation. Such linear light localization occurs either in the corners of truncated square array, where it results from the interplay…
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We study both, experimentally and theoretically, propagation of light in the fs-laser written rotating square waveguide arrays and present the first experimental evidence of light localization induced by the rotation of periodic structure in the direction of light propagation. Such linear light localization occurs either in the corners of truncated square array, where it results from the interplay between the centrifugal effect and total internal reflection at the borders of truncated array, or in the center of array, where rotation creates effective attractive optical potential. The degree of localization of linear bulk and corner modes emerging due to the rotation increases with the increase of rotation frequency. Consequently, corner and bulk solitons in rotating wave-guide arrays become thresholdless for sufficiently large rotation frequencies, in contrast to solitons in non-rotating arrays that exist only above power threshold. Focusing nonlinearity enhances localization degree of corner modes, but surprising initially it leads to broadening of bulk nonlinear states, followed by their re-localization at high input powers. Our results open new prospects for control of evolution of nonlinear multidimensional excitations by dynamically varying potentials.
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Submitted 18 May, 2023;
originally announced May 2023.
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Benchmarking a boson sampler with Hamming nets
Authors:
Ilia A. Iakovlev,
Oleg M. Sotnikov,
Ivan V. Dyakonov,
Evgeniy O. Kiktenko,
Aleksey K. Fedorov,
Stanislav S. Straupe,
Vladimir V. Mazurenko
Abstract:
Analyzing the properties of complex quantum systems is crucial for further development of quantum devices, yet this task is typically challenging and demanding with respect to required amount of measurements. A special attention to this problem appears within the context of characterizing outcomes of noisy intermediate-scale quantum devices, which produce quantum states with specific properties so…
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Analyzing the properties of complex quantum systems is crucial for further development of quantum devices, yet this task is typically challenging and demanding with respect to required amount of measurements. A special attention to this problem appears within the context of characterizing outcomes of noisy intermediate-scale quantum devices, which produce quantum states with specific properties so that it is expected to be hard to simulate such states using classical resources. In this work, we address the problem of characterization of a boson sampling device, which uses interference of input photons to produce samples of non-trivial probability distributions that at certain condition are hard to obtain classically. For realistic experimental conditions the problem is to probe multi-photon interference with a limited number of the measurement outcomes without collisions and repetitions. By constructing networks on the measurements outcomes, we demonstrate a possibility to discriminate between regimes of indistinguishable and distinguishable bosons by quantifying the structures of the corresponding networks. Based on this we propose a machine-learning-based protocol to benchmark a boson sampler with unknown scattering matrix. Notably, the protocol works in the most challenging regimes of having a very limited number of bitstrings without collisions and repetitions. As we expect, our framework can be directly applied for characterizing boson sampling devices that are currently available in experiments.
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Submitted 18 May, 2023;
originally announced May 2023.
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Observation of nonlinear disclination states
Authors:
Boquan Ren,
A. A. Arkhipova,
Yiqi Zhang,
Y. V. Kartashov,
Hongguang Wang,
S. A. Zhuravitskii,
N. N. Skryabin,
I. V. Dyakonov,
A. A. Kalinkin,
S. P. Kulik,
V. O. Kompanets,
S. V. Chekalin,
V. N. Zadkov
Abstract:
Introduction of controllable deformations into periodic materials that lead to disclinations in their structure opens novel routes for construction of higher-order topological insulators hosting topological states at disclinations. Appearance of these topological states is consistent with the bulk-disclination correspondence principle, and is due to the filling anomaly that results in fractional c…
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Introduction of controllable deformations into periodic materials that lead to disclinations in their structure opens novel routes for construction of higher-order topological insulators hosting topological states at disclinations. Appearance of these topological states is consistent with the bulk-disclination correspondence principle, and is due to the filling anomaly that results in fractional charges to the boundary unit cells. So far, topological disclination states were observed only in the linear regime, while the interplay between nonlinearity and topology in the systems with disclinations has been never studied experimentally. We report here bon the experimental observation of the nonlinear photonic disclination states in waveguide arrays with pentagonal or heptagonal disclination cores inscribed in transparent optical medium using the fs-laser writing technique. The transition between nontopological and topological phases in such structures is controlled by the Kekulé distortion coefficient $r$ with topological phase hosting simultaneously disclination states at the inner disclination core and spatially separated from them corner, zero-energy, and extended edge states at the outer edge of the structure. We show that the robust nonlinear disclination states bifurcate from their linear counterparts and that location of their propagation constants in the gap and, hence, their spatial localization can be controlled by their power. Nonlinear disclination states can be efficiently excited by Gaussian input beams, but only if they are focused into the waveguides belonging to the disclination core, where such topological states reside.
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Submitted 24 April, 2023;
originally announced April 2023.
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Reversible spin-optical interface in luminescent organic radicals
Authors:
Sebastian Gorgon,
Kuo Lv,
Jeannine Grüne,
Bluebell H. Drummond,
William K. Myers,
Giacomo Londi,
Gaetano Ricci,
Danillo Valverde,
Claire Tonnelé,
Petri Murto,
Alexander S. Romanov,
David Casanova,
Vladimir Dyakonov,
Andreas Sperlich,
David Beljonne,
Yoann Olivier,
Feng Li,
Richard H. Friend,
Emrys W. Evans
Abstract:
Molecules present a versatile platform for quantum information science, and are candidates for sensing and computation applications. Robust spin-optical interfaces are key to harnessing the quantum resources of materials. To date, carbon-based candidates have been non-luminescent, which prevents optical read-out. Here we report the first organic molecules displaying both efficient luminescence and…
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Molecules present a versatile platform for quantum information science, and are candidates for sensing and computation applications. Robust spin-optical interfaces are key to harnessing the quantum resources of materials. To date, carbon-based candidates have been non-luminescent, which prevents optical read-out. Here we report the first organic molecules displaying both efficient luminescence and near-unity generation yield of high-spin multiplicity excited states. This is achieved by designing an energy resonance between emissive doublet and triplet levels, here on covalently coupled tris(2,4,6-trichlorophenyl) methyl-carbazole radicals (TTM-1Cz) and anthracene. We observe the doublet photoexcitation delocalise onto the linked acene within a few picoseconds and subsequently evolve to a pure high spin state (quartet for monoradicals, quintet for biradical) of mixed radical-triplet character near 1.8 eV. These high-spin states are coherently addressable with microwaves even at 295 K, with optical read-out enabled by intersystem crossing to emissive states. Furthermore, for the biradical, on return to the ground state the previously uncorrelated radical spins either side of the anthracene show strong spin correlation. Our approach simultaneously supports a high efficiency of initialisation, spin manipulations and light-based read-out at room temperature. The integration of luminescence and high-spin states creates an organic materials platform for emerging quantum technologies.
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Submitted 24 March, 2023;
originally announced March 2023.
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Weak dispersion of exciton Landé factor with band gap energy in lead halide perovskites: Approximate compensation of the electron and hole dependences
Authors:
N. E. Kopteva,
D. R. Yakovlev,
E. Kirstein,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
D. N. Dirin,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
S. A. Crooker,
M. Bayer
Abstract:
The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band…
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The photovoltaic and optoelectronic properties of lead halide perovskite semiconductors are controlled by excitons, so that investigation of their fundamental properties is of critical importance. The exciton Landé or g-factor g_X is the key parameter, determining the exciton Zeeman spin splitting in magnetic fields. The exciton, electron and hole carrier g-factors provide information on the band structure, including its anisotropy, and the parameters contributing to the electron and hole effective masses. We measure g_X by reflectivity in magnetic fields up to 60 T for lead halide perovskite crystals. The materials band gap energies at a liquid helium temperature vary widely across the visible spectral range from 1.520 up to 3.213 eV in hybrid organic-inorganic and fully inorganic perovskites with different cations and halogens: FA_{0.9}Cs_{0.1}PbI_{2.8}Br_{0.2], MAPbI_{3}, FAPbBr_{3}, CsPbBr_{3}, and MAPb(Br_{0.05}Cl_{0.95})_{3}. We find the exciton g-factors to be nearly constant, ranging from +2.3 to +2.7. Thus, the strong dependences of the electron and hole g-factors on the band gap roughly compensate each other when combining to the exciton g-factor. The same is true for the anisotropies of the carrier g-factors, resulting in a nearly isotropic exciton g-factor. The experimental data are compared favorably with model calculation results.
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Submitted 30 January, 2023;
originally announced January 2023.
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Understanding the Role of Triplet-triplet Annihilation in Non-fullerene Acceptor Organic Solar Cells
Authors:
Lucy J. F. Hart,
Jeannine Grüne,
Wei Liu,
Tsz-ki Lau,
Joel Luke,
Yi-Chun Chin,
Xinyu Jiang,
Huotian Zhang,
Daniel J. C. Sowood,
Darcy M. L. Unson,
Ji-Seon Kim,
Xinhui Lu,
Ying** Zou,
Feng Gao,
Andreas Sperlich,
Vladimir Dyakonov,
Jun Yuan,
Alexander J. Gillett
Abstract:
Non-fullerene acceptors (NFAs) have enabled power conversion efficiencies exceeding 19% in organic solar cells (OSCs). However, the open-circuit voltage of OSCs remains low relative to their optical gap due to excessive non-radiative recombination, and this now limits performance. Here, we consider an important aspect of OSC design, namely management of the triplet exciton population formed after…
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Non-fullerene acceptors (NFAs) have enabled power conversion efficiencies exceeding 19% in organic solar cells (OSCs). However, the open-circuit voltage of OSCs remains low relative to their optical gap due to excessive non-radiative recombination, and this now limits performance. Here, we consider an important aspect of OSC design, namely management of the triplet exciton population formed after non-geminate charge recombination. By comparing the blends PM6:Y11 and PM6:Y6, we show that the greater crystallinity of the NFA domains in PM6:Y11 leads to a higher rate of triplet-triplet annihilation (TTA). We attribute this to the four times larger ground state dipole moment of Y11 versus Y6, which improves the long range NFA out-of-plane ordering. Since TTA converts a fraction of the non-emissive triplet states into bright singlet states, it has the potential to reduce non-radiative voltage losses. Through a kinetic analysis of the recombination processes under 1-Sun illumination, we provide a framework for determining the conditions under which TTA may improve OSC performance. If these could be satisfied, TTA has the potential to reduce non-radiative voltage losses by up to several tens of mV and could thus improve OSC performance.
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Submitted 24 April, 2023; v1 submitted 5 January, 2023;
originally announced January 2023.
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Observation of linear and nonlinear light localization at the edges of moiré lattices
Authors:
A. A. Arkhipova,
Y. V. Kartashov,
S. K. Ivanov,
S. A. Zhuravitskii,
N. N. Skryabin,
I. V. Dyakonov,
A. A. Kalinkin,
S. P. Kulik,
V. O. Kompanets,
S. V. Chekalin,
F. Ye,
V. V. Konotop,
L. Torner,
V. N. Zadkov
Abstract:
We observe linear and nonlinear light localization at the edges and in the corners of truncated moiré lattices created by the superposition of periodic mutually-twisted at Pythagorean angles square sublattices. Experimentally exciting corner linear modes in the fs-laser written moiré lattices we find drastic differences in their localization properties in comparison with the bulk excitations. We a…
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We observe linear and nonlinear light localization at the edges and in the corners of truncated moiré lattices created by the superposition of periodic mutually-twisted at Pythagorean angles square sublattices. Experimentally exciting corner linear modes in the fs-laser written moiré lattices we find drastic differences in their localization properties in comparison with the bulk excitations. We also address the impact of nonlinearity on the corner and bulk modes and experimentally observe the crossover from linear quasi-localized states to the surface solitons emerging at the higher input powers. Our results constitute the first experimental demonstration of localization phenomena induced by truncation of periodic moiré structures in photonic systems.
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Submitted 5 January, 2023;
originally announced January 2023.
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Two-qubit quantum photonic processor manufactured by femtosecond laser writing
Authors:
N. N. Skryabin,
I. V. Kondratyev,
I. V. Dyakonov,
O. V. Borzenkova,
S. P. Kulik,
S. S. Straupe
Abstract:
We present an experimental implementation of a two-qubit photonic quantum processor fabricated using femtosecond laser writing technology. We employ femtosecond laser writing to create a low-loss reconfigurable photonic chip implementing precise single-qubit and two-qubit operations. The performance of single-qubit and two-qubit gates is characterized by full process tomography. An exemplary appli…
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We present an experimental implementation of a two-qubit photonic quantum processor fabricated using femtosecond laser writing technology. We employ femtosecond laser writing to create a low-loss reconfigurable photonic chip implementing precise single-qubit and two-qubit operations. The performance of single-qubit and two-qubit gates is characterized by full process tomography. An exemplary application of the processor to determining the ground state energy of an H2 molecule using the variational quantum eigensolver algorithm is demonstrated. Our results highlight the potential of femtosecond laser writing technology to deliver high quality small-scale quantum photonic processors.
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Submitted 12 December, 2022;
originally announced December 2022.
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Demultiplexed Single-Photon Source with a Quantum Dot Coupled to Microresonator
Authors:
M. V. Rakhlin,
A. I. Galimov,
I. V. Dyakonov,
N. N. Skryabin,
G. V. Klimko,
M. M. Kulagina,
Yu. M. Zadiranov,
S. V. Sorokin,
I. V. Sedova,
Yu. A. Guseva,
D. S. Berezina,
Yu. M. Serov,
N. A. Maleev,
A. G. Kuzmenkov,
S. I. Troshkov,
K. V. Taratorin,
A. K. Skalkin,
S. S. Straupe,
S. P. Kulik,
T. V. Shubina,
A. A. Toropov
Abstract:
The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the do** profile near an epitaxial InAs/GaAs…
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The characteristics of a single-photon emitter based on a semiconductor quantum dot, such as their indistinguishability and brightness, depend on the stability of the recombination channel, which can switch spontaneously between exciton and trion. We show that dominant recombination through neutral exciton states can be achieved by careful control of the do** profile near an epitaxial InAs/GaAs quantum dot placed in a columnar microcavity with distributed Bragg reflectors. The Hong-Ou-Mandel experiments carried out in the fabricated device demonstrate the degree of indistinguishability of 91% of successively emitted single photons within 242 ns at an efficiency of 10% inside a single-mode optical fiber. The achieved brightness made it possible to implement spatio-temporal demultiplexing of photons in six independent spatial modes with an in-fiber generation frequency of more than 0.1 Hz.
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Submitted 8 November, 2022;
originally announced November 2022.
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Low-loss silicon nitride photonic ICs for single-photon applications
Authors:
Kirill A. Buzaverov,
Aleksandr S. Baburin,
Evgeny V. Sergeev,
Sergey S. Avdeev,
Evgeniy S. Lotkov,
Mihail Andronik,
Victoria E. Stukalova,
Dmitry A. Baklykov,
Ivan V. Dyakonov,
Nikolay N. Skryabin,
Mikhail Yu. Saygin,
Sergey P. Kulik,
Ilya A. Ryzhikov,
Ilya A. Rodionov
Abstract:
Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report…
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Low-loss photonic integrated circuits (PICs) are the key elements in future quantum technologies, nonlinear photonics and neural networks. The low-loss photonic circuits technology targeting C-band application is well established across multi-project wafer (MPW) fabs, whereas near-infrared (NIR) PICs suitable for the state-of-the-art single-photon sources are still underdeveloped. Here, we report the labs-scale process optimization and optical characterization of low-loss tunable photonic integrated circuits for single-photon applications. We demonstrate the lowest propagation losses to the date (as low as 0.55 dB/cm at 925 nm wavelength) in single-mode silicon nitride submicron waveguides (220x550 nm). This performance is achieved due to advanced e-beam lithography and inductively coupled plasma reactive ion etching steps which yields waveguides vertical sidewalls with down to 0.85 nm sidewall roughness. These results provide a chip-scale low-loss PIC platform that could be even further improved with high quality SiO2 cladding, chemical-mechanical polishing and multistep annealing for extra-strict single-photon applications.
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Submitted 28 October, 2022;
originally announced October 2022.
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Observation of nonlinearity-controlled switching of topological edge states
Authors:
A. A. Arkhipova,
S. K. Ivanov,
S. A. Zhuravitskii,
N. N. Skryabin,
I. V. Dyakonov,
A. A. Kalinkin,
S. P. Kulik,
V. O. Kompanets,
S. V. Chekalin,
Y. V. Kartashov,
V. N. Zadkov
Abstract:
We report the experimental observation of the periodic switching of topological edge states between two dimerized fs-laser written waveguide arrays. Switching occurs due to the overlap of the modal fields of the edge states from topological forbidden gap, when they are simultaneously present in two arrays brought into close proximity. We found that the phenomenon occurs for both strongly and weakl…
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We report the experimental observation of the periodic switching of topological edge states between two dimerized fs-laser written waveguide arrays. Switching occurs due to the overlap of the modal fields of the edge states from topological forbidden gap, when they are simultaneously present in two arrays brought into close proximity. We found that the phenomenon occurs for both strongly and weakly localized edge states and that switching rate increases with decreasing spacing between the topological arrays. When topological arrays are brought in contact with nontopological ones, switching in topological gap does not occur, while one observes either the formation of nearly stationary topological interface mode or strongly asymmetric diffraction into the nontopological array depending on the position of the initial excitation. Switching between topological arrays can be controlled and even completely arrested by increasing the peak power of the input signal, as we observed with different array spacings.
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Submitted 29 June, 2022;
originally announced June 2022.
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Triplet Excitons and associated Efficiency-Limiting Pathways in Organic Solar Cell Blends based on (Non-) Halogenated PBDB-T and Y-Series
Authors:
Jeannine Grüne,
Giacomo Londi,
Alexander J. Gillett,
Basil Stähly,
Sebastian Lulei,
Maria Kotova,
Yoann Olivier,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
The great progress in organic photovoltaics (OPV) over the past few years has been largely achieved by the development of non-fullerene acceptors (NFAs), with power conversion efficiencies now approaching 20%. To further improve device performance, loss mechanisms must be identified and minimized. Triplet states are known to adversely affect device performance, since they can form energetically tr…
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The great progress in organic photovoltaics (OPV) over the past few years has been largely achieved by the development of non-fullerene acceptors (NFAs), with power conversion efficiencies now approaching 20%. To further improve device performance, loss mechanisms must be identified and minimized. Triplet states are known to adversely affect device performance, since they can form energetically trapped excitons on low-lying states that are responsible for non-radiative losses or even device degradation. Halogenation of OPV materials has long been employed to tailor energy levels and to enhance open circuit voltage. Yet, the influence on recombination to triplet excitons has been largely unexplored. Using the complementary spin-sensitive methods of photoluminescence detected magnetic resonance (PLDMR) and transient electron paramagnetic resonance (trEPR) corroborated by transient absorption and quantum-chemical calculations, we unravel exciton pathways in OPV blends employing the polymer donors PBDB-T, PM6 and PM7 together with NFAs Y6 and Y7. All blends reveal triplet excitons on the NFA populated via non-geminate hole back transfer and, in blends with halogenated donors, also by spin-orbit coupling driven intersystem crossing. Identifying these triplet formation pathways in all tested solar cell absorber films highlights the untapped potential for improved charge generation to further increase plateauing OPV efficiencies.
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Submitted 3 January, 2023; v1 submitted 29 April, 2022;
originally announced April 2022.
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Observation of edge solitons in topological trimer arrays
Authors:
Y. V. Kartashov,
A. A. Arkhipova,
S. A. Zhuravitskii,
N. N. Skryabin,
I. V. Dyakonov,
A. A. Kalinkin,
S. P. Kulik,
V. O. Kompanets,
S. V. Chekalin,
L. Torner,
V. N. Zadkov
Abstract:
We report the experimental observation of nonlinear light localization and edge soliton formation at the edges of fs-laser written trimer waveguide arrays, where transition from non-topological to topological phases is controlled by the spacing between neighboring trimers. We found that, in the former regime, edge solitons occur only above a considerable power threshold, whereas in the latter one…
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We report the experimental observation of nonlinear light localization and edge soliton formation at the edges of fs-laser written trimer waveguide arrays, where transition from non-topological to topological phases is controlled by the spacing between neighboring trimers. We found that, in the former regime, edge solitons occur only above a considerable power threshold, whereas in the latter one they bifurcate from linear states. Edge solitons are observed in a broad power range where their propagation constant falls into one of the topological gaps of the system, while partial delocalization is observed when considerable nonlinearity drives the propagation constant into an allowed band, causing coupling with bulk modes. Our results provide direct experimental evidence of the coexistence and selective excitation in the same or in different topological gaps of two types of topological edge solitons with different internal structures, which can rarely be observed even in nontopological systems. This also constitutes the first experimental evidence of formation of topological solitons in a nonlinear system with more than one topological gap.
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Submitted 9 March, 2022;
originally announced March 2022.
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Superradiance of Spin Defects in Silicon Carbide for Maser Applications
Authors:
Andreas Gottscholl,
Maximilian Wagenhöfer,
Manuel Klimmer,
Selina Scherbel,
Christian Kasper,
Valentin Baianov,
Georgy V. Astakhov,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy…
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Masers as telecommunication amplifiers have been known for decades, yet their application is strongly limited due to extreme operating conditions requiring vacuum techniques and cryogenic temperatures. Recently, a new generation of masers has been invented based on optically pumped spin states in pentacene and diamond. In this study, we pave the way for masers based on spin S = 3/2 silicon vacancy (V$_{Si}$) defects in silicon carbide (SiC) to overcome the microwave generation threshold and discuss the advantages of this highly developed spin hosting material. To achieve population inversion, we optically pump the V$_{Si}$ into their $m_S$ = $\pm$1/2 spin sub-states and additionally tune the Zeeman energy splitting by applying an external magnetic field. In this way, the prerequisites for stimulated emission by means of resonant microwaves in the 10 GHz range are fulfilled. On the way to realising a maser, we were able to systematically solve a series of subtasks that improved the underlying relevant physical parameters of the SiC samples. Among others, we investigated the pump efficiency as a function of the optical excitation wavelength and the angle between the magnetic field and the defect symmetry axis in order to boost the population inversion factor, a key figure of merit for the targeted microwave oscillator. Furthermore, we developed a high-Q sapphire microwave resonator (Q ~ 10$^4$ - 10$^5$) with which we find superradiant stimulated microwave emission. In summary, SiC with optimized spin defect density and thus spin relaxation rates is well on its way of becoming a suitable maser gain material with wide-ranging applications.
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Submitted 6 May, 2022; v1 submitted 1 March, 2022;
originally announced March 2022.
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Spin dynamics of electrons and holes interacting with nuclei in MAPbI$_3$ perovskite single crystals
Authors:
E. Kirstein,
D. R. Yakovlev,
E. A. Zhukov,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
Methylammonium lead triiodine (MAPbI$_3$) is a material representative of the hybrid organic-inorganic lead halide perovskites which attract currently great attention due to their photovoltaic efficiency and bright optoelectronic properties. Here, the coherent spin dynamics of charge carriers and spin dependent phenomena induced by the carrier interaction with nuclear spins are studied in MAPbI…
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Methylammonium lead triiodine (MAPbI$_3$) is a material representative of the hybrid organic-inorganic lead halide perovskites which attract currently great attention due to their photovoltaic efficiency and bright optoelectronic properties. Here, the coherent spin dynamics of charge carriers and spin dependent phenomena induced by the carrier interaction with nuclear spins are studied in MAPbI$_3$ single crystals, using time-resolved Kerr rotation at cryogenic temperatures in magnetic fields up to 3 T. Spin dephasing times up to a few nanoseconds and a longitudinal spin relaxation time of 37 ns are measured. The Larmor spin precession of both resident electrons and holes is identified in the Kerr rotation signals. The Landé factors ($g$-factors) in the orthorhombic crystal phase show a strong anisotropy, ranging for the holes from $-0.28$ to $-0.71$ and for the electrons from $+2.46$ to $+2.98$, while the $g$-factor dispersion of about 1% is rather small. An exciton $g$-factor of $+2.3$ is measured by magneto-reflectivity. A dynamic nuclear polarization by means of spin polarized electrons and holes is achieved in tilted magnetic fields giving access to the carrier-nuclei exchange interaction and the nuclei spin relaxation time exceeding 16 minutes.
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Submitted 18 January, 2022;
originally announced January 2022.
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The Landé factors of electrons and holes in lead halide perovskites: universal dependence on the band gap
Authors:
E. Kirstein,
D. R. Yakovlev,
M. M. Glazov,
E. A. Zhukov,
D. Kudlacik,
I. V. Kalitukha,
V. F. Sapega,
G. S. Dimitriev,
M. A. Semina,
M. O. Nestoklon,
E. L. Ivchenko,
N. E. Kopteva,
D. N. Dirin,
O. Nazarenko,
M. V. Kovalenko,
A. Baumann,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)…
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The Landé or $g$-factors of charge carriers are decisive for the spin-dependent phenomena in solids and provide also information about the underlying electronic band structure. We present a comprehensive set of experimental data for values and anisotropies of the electron and hole Landé factors in hybrid organic-inorganic (MAPbI$_3$, MAPb(Br$_{0.5}$Cl$_{0.5}$)$_3$, MAPb(Br$_{0.05}$Cl$_{0.95}$)$_3$, FAPbBr$_3$, FA$_{0.9}$Cs$_{0.1}$PbI$_{2.8}$Br$_{0.2}$) and all-inorganic (CsPbBr$_3$) lead halide perovskites, determined by pump-probe Kerr rotation and spin-flip Raman scattering in magnetic fields up to 10~T at cryogenic temperatures. Further, we use first-principles DFT calculations in combination with tight-binding and $\mathbf k \cdot \mathbf p$ approaches to calculate microscopically the Landé factors. The results demonstrate their universal dependence on the band gap energy across the different perovskite material classes, which can be summarized in a universal semi-phenomenological expression, in good agreement with experiment.
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Submitted 31 December, 2021;
originally announced December 2021.
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Electron-nuclear coherent coupling and nuclear spin readout through optically polarized VB- spin states in hBN
Authors:
Fadis F. Murzakhanov,
Georgy V. Mamin,
Sergei B. Orlinskii,
Uwe Gerstmann,
Wolf G. Schmidt,
Timur Biktagirov,
Igor Aharonovich,
Andreas Gottscholl,
Andreas Sperlich,
Vladimir Dyakonov,
Victor A. Soltamov
Abstract:
Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time…
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Coherent coupling of defect spins with surrounding nuclei along with the endowment to read out the latter, are basic requirements for an application in quantum technologies. We show that negatively charged boron vacancies (VB-) in electron-irradiated hexagonal boron nitride (hBN) meet these prerequisites. We demonstrate Hahn-echo coherence of the VB- electron spin with a characteristic decay time Tcoh = 15 us, close to the theoretically predicted limit of 18 us for spin defects in hBN. Modulation in the MHz range superimposed on the Hahn-echo decay curve are shown to be induced by coherent coupling of the VB- spin with the three nearest 14N nuclei through a nuclear quadrupole interaction of 2.11 MHz. Supporting DFT calculation confirm that the electron-nuclear coupling is confined to the defective layer. Our findings allow an in-depth understanding of the electron-nuclear interactions of the VB- defect in hBN and demonstrate its strong potential in quantum technologies.
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Submitted 20 December, 2021;
originally announced December 2021.
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Photon echo polarimetry of excitons and biexcitons in a CH$_3$NH$_3$PbI$_3$ perovskite single crystal
Authors:
A. V. Trifonov,
S. Grisard,
A. N. Kosarev,
I. A. Akimov,
D. R. Yakovlev,
J. Höcker,
V. Dyakonov,
M. Bayer
Abstract:
Lead halide perovskites show remarkable performance when used in photovoltaic and optoelectronic devices. However, the peculiarities of light-matter interactions in these materials in general are far from being fully explored experimentally and theoretically. Here we specifically address the energy level order of optical transitions and demonstrate photon echos in a methylammonium lead triiodide s…
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Lead halide perovskites show remarkable performance when used in photovoltaic and optoelectronic devices. However, the peculiarities of light-matter interactions in these materials in general are far from being fully explored experimentally and theoretically. Here we specifically address the energy level order of optical transitions and demonstrate photon echos in a methylammonium lead triiodide single crystal, thereby determining the optical coherence times $T_2$ for excitons and biexcitons at cryogenic temperature to be 0.79 ps and 0.67 ps, respectively. Most importantly, we have developed an experimental photon-echo polarimetry method that not only identifies the contributions from exciton and biexciton complexes, but also allows accurate determination of the biexciton binding energy of 2.4 meV, even though the period of quantum beats between excitons and biexcitons is much longer than the coherence times of the resonances. Our experimental and theoretical analysis methods contribute to the understanding of the complex mechanism of quasiparticle interactions at moderate pump density and show that even in high-quality perovskite crystals and at very low temperatures, inhomogeneous broadening of excitonic transitions due to local crystal potential fluctuations is a source of optical dephasing.
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Submitted 16 December, 2021;
originally announced December 2021.
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Detecting triplet states in opto-electronic and photovoltaic materials and devices by transient optically detected magnetic resonance
Authors:
Jeannine Grüne,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic…
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Triplet excited states in organic semiconductor materials and devices are notoriously difficult to detect and study with established spectroscopic methods. Yet, they are a crucial intermediate step in next-generation organic light emitting diodes (OLED) that employ thermally activated delayed fluorescence (TADF) to upconvert non-emissive triplets to emissive singlet states. In organic photovoltaic (OPV) devices, however, triplets are an efficiency-limiting exciton loss channel and are also involved in device degradation. Here, we introduce an innovative spin-sensitive method to study triplet states in both, optically excited organic semiconductor films, as well as in electrically driven devices. The method of transient optically detected magnetic resonance (trODMR) can be applied to all light-emitting materials whose luminescence depends on paramagnetic spin states. It is thus an ideal spectroscopic tool to distinguish different states involved and determine their corresponding time scales. We unravel the role of intermediate excited spin states in opto-electronic and photovoltaic materials and devices and reveal fundamental differences in electrically and optically induced triplet states.
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Submitted 23 November, 2021;
originally announced November 2021.
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Photophysics of Deep Blue Acridane- and Benzonitrile-Based Emitter Employing Thermally Activated Delayed Fluorescence
Authors:
Nikita A. Drigo,
Liudmila G. Kudriashova,
Sebastian Weissenseel,
Andreas Sperlich,
Aron Joel Huckaba,
Mohammad Khaja Nazeeruddin,
Vladimir Dyakonov
Abstract:
We designed and synthesized a new organic light-emitting diode (OLED) emitter, SBABz4, containing spiro-biacridine donor (D) in the core surrounded by two benzonitrile acceptors (A). The dual A-DxD-A structure is shown to provide pure-blue emission in relation to its single A-D counterpart. Time-resolved photoluminescence (TRPL) recorded in the broad dynamic range from solutions and solid films re…
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We designed and synthesized a new organic light-emitting diode (OLED) emitter, SBABz4, containing spiro-biacridine donor (D) in the core surrounded by two benzonitrile acceptors (A). The dual A-DxD-A structure is shown to provide pure-blue emission in relation to its single A-D counterpart. Time-resolved photoluminescence (TRPL) recorded in the broad dynamic range from solutions and solid films revealed three emission components: prompt fluorescence, phosphorescence, and efficient thermally-activated delayed fluorescence (TADF). The latter is independently proven by temperature-dependent TRPL and oxygen-quenching PL experiment. From the PL lifetimes and quantum yield, we estimated maximum external quantum efficiency of 7.1% in SBABz4-based OLEDs, and demonstrated 6.8% in a working device.
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Submitted 12 November, 2021;
originally announced November 2021.
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Combining optical and magnetic resonance spectroscopies to probe charge recombination via triplet excitons in organic solar cells
Authors:
Alberto Privitera,
Jeannine Grune,
Akchheta Karki,
William K. Myers,
Vladimir Dyakonov,
Thuc-Quyen Nguyen,
Moritz K. Riede,
Richard H. Friend,
Andreas Sperlich,
Alexander J. Gillett
Abstract:
Organic solar cells (OSCs) have recently shown a rapid improvement in their performance, bringing power conversion efficiencies (PCEs) closer to the point where commercial applications of the technology become viable. However, the low open-circuit voltage (Voc) of OSCs relative to their optical gap still limits PCEs to below 20%. A key factor contributing to the large Voc deficit in OSCs is non-ra…
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Organic solar cells (OSCs) have recently shown a rapid improvement in their performance, bringing power conversion efficiencies (PCEs) closer to the point where commercial applications of the technology become viable. However, the low open-circuit voltage (Voc) of OSCs relative to their optical gap still limits PCEs to below 20%. A key factor contributing to the large Voc deficit in OSCs is non-radiative recombination to spin-triplet excitons, which is widely, but not universally, observed in blends using both fullerene and non-fullerene electron acceptors. Here, we present an experimental framework that combines time resolved optical and magnetic resonance spectroscopies to detect triplet excitons and identify their formation mechanisms. We apply our methodology to two well-studied polymer:fullerene systems, PM6:PC60BM and PTB7-Th:PC60BM, enabling us to selectively investigate distinct triplet formation pathways. In contrast to the more efficient non-fullerene acceptor systems that show only triplet states formed via non-geminate recombination, the fullerene systems also show significant triplet formation via geminate processes. We associate this with electrons trapped at the isolated fullerenes that sit within the alkyl sidechains of the donor polymers. Thus, our model study demonstrates how these complex and overlap** processes can be successfully deconvoluted to reveal the intricacies of triplet generation dynamics in OSC blends.
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Submitted 28 October, 2021;
originally announced October 2021.
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Charge Transfer in Ternary Solar Cells Employing Two Fullerene Derivatives: Where do Electrons Go?
Authors:
Andreas Sperlich,
Michael Auth,
Vladimir Dyakonov
Abstract:
Earlier reports demonstrated that ternary organic solar cells (OSC) made of donor polymers (D) blended with different mixtures of fullerene acceptors (A:A) performed very similarly. This finding is surprising, as the corresponding fullerene LUMO levels are slightly different, which might result in decisive differences in the charge transfer step. We investigate ternary OSC (D:A:A) made of the dono…
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Earlier reports demonstrated that ternary organic solar cells (OSC) made of donor polymers (D) blended with different mixtures of fullerene acceptors (A:A) performed very similarly. This finding is surprising, as the corresponding fullerene LUMO levels are slightly different, which might result in decisive differences in the charge transfer step. We investigate ternary OSC (D:A:A) made of the donor polymer P3HT with stoichiometric mixtures of different fullerene derivatives, PC60BM:PC70BM and PC70BM:IC60BA, respectively. Using quantitative electron paramagnetic resonance (EPR) we can distinguish between positive and negative polarons, localized on the specific molecules. We found that after the initial charge transfer step, the electrons are re-distributed over two nearby acceptors in agreement with their stoichiometry and their relative LUMO energy difference. Remarkably, the measured delta LUMO differences in fullerene mixtures are reduced by an order of magnitude compared to that of the pristine materials, i.e., below 1 meV for PC60BM:PC70BM and (20 +/- 5) meV for PC70BM:IC60BA. Furthermore, we found that this reduced delta LUMO explains the shift in open circuit voltage for D:A:A organic solar cells. We attribute these findings to hybridization, leading to an effective fullerene LUMO. Consequently, multi-acceptor blends are indeed a viable option for photodetectors and solar cells, as they combine the best electron acceptor and light absorbing properties.
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Submitted 22 October, 2021;
originally announced October 2021.
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Long-Lived Spin-Polarized Intermolecular Exciplex States in Thermally Activated Delayed Fluorescence-Based Organic Light-Emitting Diodes
Authors:
Sebastian Weissenseel,
Andreas Gottscholl,
Rebecca Bönnighausen,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find…
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Spin-spin interactions in organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are pivotal because radiative recombination is largely determined by triplet-to-singlet conversion, also called reverse intersystem crossing (RISC). To explore the underlying process, we apply a spin-resonance spectral hole-burning technique to probe electroluminescence. We find that the triplet exciplex states in OLEDs are highly spin-polarized and show that these states can be decoupled from the heterogeneous nuclear environment as a source of spin dephasing and can even be coherently manipulated on a spin-spin relaxation time scale T2* of 30 ns. Crucially, we obtain the characteristic triplet exciplex spin-lattice relaxation time T1 in the range of 50 us, which far exceeds the RISC time. We conclude that slow spin relaxation rather than RISC is an efficiency-limiting step for intermolecular donor:acceptor systems. Finding TADF emitters with faster spin relaxation will benefit this type of TADF OLEDs.
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Submitted 18 November, 2021; v1 submitted 13 August, 2021;
originally announced August 2021.
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Nongeminate and Geminate Recombination in PTB7:PC$_{71}$BM solar cells
Authors:
A. Foertig,
J. Kniepert,
M. Gluecker,
T. Brenner,
V. Dyakonov,
D. Neher,
C. Deibel
Abstract:
A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE) and time delayed collection field (TDCF) measurements is applied to poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]] (PTB7):[6,6]-phenyl-C71-butyric acid (PC$_{71}$BM) bulk heterojunction solar cells to analyze the limitat…
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A combination of transient photovoltage (TPV), voltage dependent charge extraction (CE) and time delayed collection field (TDCF) measurements is applied to poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl] [3-fluoro-2-[(2-ethylhexyl)carbonyl] thieno[3,4-b]thiophenediyl]] (PTB7):[6,6]-phenyl-C71-butyric acid (PC$_{71}$BM) bulk heterojunction solar cells to analyze the limitations of photovoltaic performance. Devices are processed from pure chlorobenzene (CB) solution and a subset was optimized with 1,8-diiodooctane (DIO) as co-solvent. The dramatic changes in device performance are discussed with respect to the dominating loss processes. While in the devices processed from CB solution, severe geminate and nongeminate recombination is observed, the use of DIO facilitates efficient polaron pair dissociation and minimizes geminate recombination. Thus, from the determined charge carrier decay rate under open circuit conditions and the voltage dependent charge carrier densities $n(V)$, the nongeminate loss current $j_{loss}$ of the samples with DIO alone enables us to reconstruct the current/voltage ($j/V$) characteristics across the whole operational voltage range. Geminate and nongeminate losses are considered to describe the $j/V$ response of cells prepared without additive, but lead to a clearly overestimated device performance. We attribute the deviation between measured and reconstructed $j/V$ characteristics to trapped charges in isolated domains of pure fullerene phases.
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Submitted 18 June, 2021;
originally announced June 2021.
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Nongeminate Recombination in Planar and Bulk Heterojunction Organic Solar Cells
Authors:
A. Foertig,
A. Wagenpfahl,
T. Gerbich,
D. Cheyns,
V. Dyakonov,
C. Deibel
Abstract:
We investigate nongeminate recombination in organic solar cells based on copper phthalocyanine (CuPc) and C$_{60}$. Two device architectures, the planar heterojunction (PHJ) and the bulk heterojunction (BHJ), are directly compared in view of differences in charge carrier decay dynamics. We apply a combination of transient photovoltage (TPV) experiments, yielding the small perturbation charge carri…
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We investigate nongeminate recombination in organic solar cells based on copper phthalocyanine (CuPc) and C$_{60}$. Two device architectures, the planar heterojunction (PHJ) and the bulk heterojunction (BHJ), are directly compared in view of differences in charge carrier decay dynamics. We apply a combination of transient photovoltage (TPV) experiments, yielding the small perturbation charge carrier lifetime, and charge extraction measurements, providing the charge carrier density. In organic solar cells, charge photogeneration and recombination primarily occur at the donor--acceptor heterointerface. Whereas the BHJ can often be approximated by an effective medium due to rather small scale phase separation, the PHJ has a well defined two-dimensional heterointerface. To study recombination dynamics in PHJ devices most relevant is the charge accumulation at this interface. As from extraction techniques only the spatially averaged carrier concentration can be determined, we derive the charge carrier density at the interface $n_{int}$ from the open circuit voltage. Comparing the experimental results with macroscopic device simulation we discuss the differences of recombination and charge carrier densities in CuPc:C$_{60}$ PHJ and BHJ devices with respect to the device performance. The open circuit voltage of BHJ is larger than for PHJ at low light intensities, but at 0.3 sun the situation is reversed: here, the PHJ can finally take advantage of its generally longer charge carrier lifetimes, as the active recombination region is smaller.
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Submitted 18 June, 2021;
originally announced June 2021.
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Coupling spin defects in hexagonal boron nitride to monolithic bullseye cavities
Authors:
Johannes E. Fröch,
Lesley Spencer,
Mehran Kianinia,
Daniel Totonjian,
Minh Nguyen,
Vladimir Dyakonov,
Milos Toth,
Sejeong Kim,
Igor Aharonovich
Abstract:
Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vaca…
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Color centers in hexagonal boron nitride (hBN) are becoming an increasingly important building block for quantum photonic applications. Herein, we demonstrate the efficient coupling of recently discovered spin defects in hBN to purposely designed bullseye cavities. We show that the all monolithic hBN cavity system exhibits an order of magnitude enhancement in the emission of the coupled boron vacancy spin defects. In addition, by comparative finite difference time domain modelling, we shed light on the emission dipole orientation, which has not been experimentally demonstrated at this point. Beyond that, the coupled spin system exhibits an enhanced contrast in optically detected magnetic resonance readout and improved signal to noise ratio. Thus, our experimental results supported by simulations, constitute a first step towards integration of hBN spin defects with photonic resonators for a scalable spin photon interface.
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Submitted 25 May, 2021;
originally announced May 2021.
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Negative Differential Resistance in Carbon-Based Nanostructures
Authors:
S. A. Evlashin,
M. A. Tarkhov,
D. A. Chernodubov,
A. V. Inyushkin,
A. A. Pilevsky,
P. V. Dyakonov,
A. A. Pavlov,
N. V. Suetin,
I. S. Akhatov,
V. Perebeinos
Abstract:
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-cu…
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Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates.
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Submitted 10 May, 2021; v1 submitted 13 April, 2021;
originally announced April 2021.
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Waveguide lattice based architecture for multichannel optical transformations
Authors:
N. N. Skryabin,
I. V. Dyakonov,
M. Yu. Saygin,
S. P. Kulik
Abstract:
We consider coupled waveguide lattices as an architecture that implement a wide range of multiport transformations. In this architecture, a particular transfer matrix is obtained through setting the step-wise profiles of the propagation constants seen by the field evolving in the lattice. To investigate the transformation capabilities, the implementation of a set of transfer matrices taken at rand…
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We consider coupled waveguide lattices as an architecture that implement a wide range of multiport transformations. In this architecture, a particular transfer matrix is obtained through setting the step-wise profiles of the propagation constants seen by the field evolving in the lattice. To investigate the transformation capabilities, the implementation of a set of transfer matrices taken at random and particular cases of discrete Fourier transform, Hadamard and permutation matrices have been described. Because the waveguide lattices schemes are more compact than their traditional lumped-parameter counterparts, our architecture may be beneficial for using in photonic information processing systems of the future.
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Submitted 3 March, 2021;
originally announced March 2021.
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Sub-nanoscale Temperature, Magnetic Field and Pressure sensing with Spin Centers in 2D hexagonal Boron Nitride
Authors:
Andreas Gottscholl,
Matthias Diez,
Victor Soltamov,
Christian Kasper,
Andreas Sperlich,
Mehran Kianinia,
Carlo Bradac,
Igor Aharonovich,
Vladimir Dyakonov
Abstract:
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are poss…
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Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies ($V_B^-$) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and bright spin-dependent photoluminescence (PL) of the $V_B^-$. Specifically, we find that the frequency shift in optically detected magnetic resonance (ODMR) measurements is not only sensitive to static magnetic fields, but also to temperature and pressure changes which we relate to crystal lattice parameters. Our work is important for the future use of spin-rich hBN layers as intrinsic sensors in heterostructures of functionalized 2D materials.
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Submitted 22 February, 2021;
originally announced February 2021.
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Room Temperature Coherent Control of Spin Defects in hexagonal Boron Nitride
Authors:
Andreas Gottscholl,
Matthias Diez,
Victor Soltamov,
Christian Kasper,
Andreas Sperlich,
Mehran Kianinia,
Carlo Bradac,
Igor Aharonovich,
Vladimir Dyakonov
Abstract:
Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pu…
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Optically active defects in solids with accessible spin states are promising candidates for solid state quantum information and sensing applications. To employ these defects as quantum building blocks, coherent manipulation of their spin state is required. Here we realize coherent control of ensembles of boron vacancy (V$_B^-$) centers in hexagonal boron nitride (hBN). Specifically, by applying pulsed spin resonance protocols, we measure spin-lattice relaxation time ($T_1$) of 18 $μ$s and spin coherence time ($T_2$) of 2 $μ$s at room temperature. The spin-lattice relaxation time increases by three orders of magnitude at cryogenic temperature. Furthermore, employing a two- and three-pulse electron spin-echo envelope modulation (ESEEM) we separate the quadrupole and hyperfine interactions with the surrounding nuclei. Finally, by applying a method to decouple the spin state from its inhomogeneous nuclear environment - a "hole-burning" - the spectral optically detected magnetic resonance linewidth is significantly reduced to several tens of kHz, thus extending the spin coherence time by a factor of three. Our results are important for employment of van der Waals materials for quantum technologies, specifically in the context of using hBN as a high-resolution quantum sensor for hybrid quantum systems including 2D heterostructures, nanoscale devices and emerging atomically thin magnets.
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Submitted 23 October, 2020;
originally announced October 2020.
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Thermal Activation Bottleneck in TADF OLEDs based on m-MTDATA:BPhen
Authors:
Nikolai Bunzmann,
Douglas L. Baird,
Hans Malissa,
Sebastian Weissenseel,
Christoph Boehme,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) can be highly efficient because of the conversion of non-radiative triplet to radiative singlet states by reverse intersystem crossing (RISC). Even highly efficient TADF OLEDs are limited by long excited state lifetimes though, which limit current densities and cause device degradation. When singlet-trip…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) can be highly efficient because of the conversion of non-radiative triplet to radiative singlet states by reverse intersystem crossing (RISC). Even highly efficient TADF OLEDs are limited by long excited state lifetimes though, which limit current densities and cause device degradation. When singlet-triplet energy gaps are comparable to thermal energies (~tens of millielectronvolts), RISC is fast and limited only by bottlenecks due to spin-selection rules. We have studied this phenomenon under device operating conditions using pulsed electrically detected magnetic resonance spectroscopy (pEDMR) in OLEDs based on the donor:acceptor combination m MTDATA:BPhen (4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine : 4,7 diphenyl-1,10-phenanthroline). These experiments showed magnetic resonance signatures of emissive exciplex states at the donor:acceptor interface, yet these signals did not reveal coherent spin propagation effects. Instead, the intensity of these signals scales linearly with the energy dose of the applied microwave pulses. This observation excludes the direct involvement of the resonantly prepared coherent spin states and indicates that the observed current response is due to magnetic resonant heating. This implies that the studied TADF blend is not limited by spin-forbidden RISC, but rather by the thermal activation step.
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Submitted 13 August, 2020;
originally announced August 2020.
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Kinetic Modeling of Transient Electroluminescence reveals TTA as Efficiency-Limiting Process in Exciplex-Based TADF OLEDs
Authors:
Jeannine Grüne,
Nikolai Bunzmann,
Moritz Meinecke,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of non-emissive triplet states to emissive singlets states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects in operational OLED…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) show increased efficiencies due to efficient upconversion of non-emissive triplet states to emissive singlets states via reverse intersystem crossing (RISC). To assess the influence of the characteristic efficiency-enhancing RISC process as well as possible efficiency-limiting effects in operational OLEDs, we performed temperature-dependent measurements of transient electroluminescence (trEL). With kinetic modeling, we quantify and separate the impact of different temperature-dependent depopulation processes and contributions to EL in the established donor:acceptor model system m-MTDATA:3TPYMB. The underlying rate equations adapted for EL measurements on TADF systems include radiative and non-radiative first- and second-order effects. In this way, we are able to evaluate the non-radiative recombination and annihilation processes with respect to their efficiency-limiting effects on these OLEDs. On the one hand, we evaluate the depopulation of intermolecular exciplex triplet states via non-radiative direct triplet decay, RISC and triplet-triplet annihilation (TTA). On the other hand, we determine the contribution to EL from the formation of singlet exciplex states via polarons, RISC and TTA. Our results show that TTA accounts for a significant part to triplet depopulation and contributes to EL while limiting the overall device quantum efficiency.
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Submitted 4 November, 2020; v1 submitted 17 July, 2020;
originally announced July 2020.
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Environmentally friendly method of silicon recycling: synthesis of silica nanoparticles in an aqueous solution
Authors:
J. V. Bondareva,
T. F. Aslyamov,
A. G. Kvashnin,
P. V. Dyakonov,
Y. O. Kuzminova,
Yu. A. Mankelevich,
E. N. Voronina,
S. A. Dagesyan,
A. V. Egorov,
R. A. Khmelnitsky,
M. A. Tarkhov,
N. V. Suetin,
I. S. Akhatov,
S. A. Evlashin
Abstract:
Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silicon waste. To address the needs of silicon recycling, we develop a top-down approach that achieves 100% conversion of bulk silicon to silica nanopartic…
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Future decades will experience tons of silicon waste from various sources, with no reliable recycling route. The transformation of bulk silicon into SiO2 nanoparticles is environmentally significant because it provides a way to recycle residual silicon waste. To address the needs of silicon recycling, we develop a top-down approach that achieves 100% conversion of bulk silicon to silica nanoparticles with outcome sizes of 8-50 nm. In addition to upcycling the potential of silica, our method also possesses several advantages, such as simplicity, scalability and controllable particle size distribution. Many fields of science and manufacturing, such as optics, photonics, medical, and mechanical applications, require size-controllable fabrication of silica nanoparticles. We demonstrate that control over temperature and hydrolysis time has a significant impact on the average particle size and distribution shape. Additionally, we unravel the process of nanoparticle formation using a theoretical nucleation model and quantum density functional theory calculations. Our results provide a theoretical and experimental basis for silica nanoparticle fabrication and pave the way for further silicon conservation research.
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Submitted 14 July, 2020;
originally announced July 2020.
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Spin- and Voltage-dependent emission from Intra- and Intermolecular TADF OLEDs
Authors:
Nikolai Bunzmann,
Benjamin Krugmann,
Sebastian Weissenseel,
Liudmila Kudriashova,
Khrystyna Ivaniuk,
Pavlo Stakhira,
Vladyslav Cherpak,
Marian Chapran,
Gintare Grybauskaite-Kaminskiene,
Juozas Vidas Grazulevicius,
Vladimir Dyakonov,
Andreas Sperlich
Abstract:
Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of indi…
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Organic light emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) utilize molecular systems with a small energy splitting between singlet and triplet states. This can either be realized in intramolecular charge transfer states of molecules with near-orthogonal donor and acceptor moieties or in intermolecular exciplex states formed between a suitable combination of individual donor and acceptor materials. Here, we investigate 4,4'-(9H,9'H-[3,3'-bicarbazole]-9,9'-diyl)bis(3-(trifluoromethyl) benzonitrile) (pCNBCzoCF3), which shows intramolecular TADF but can also form exciplex states in combination with 4,4',4''-tris[phenyl(m-tolyl)amino]triphenylamine (m-MTDATA). Orange emitting exciplex-based OLEDs additionally generate a sky-blue emission from the intramolecular emitter with an intensity that can be voltage-controlled. We apply electroluminescence detected magnetic resonance (ELDMR) to study the thermally activated spin-dependent triplet to singlet up-conversion in operating devices. Thereby, we can investigate intermediate excited states involved in OLED operation and derive the corresponding activation energy for both, intra- and intermolecular based TADF. Furthermore, we give a lower estimate for the extent of the triplet wavefunction to be >1.2 nm. Photoluminescence detected magnetic resonance (PLDMR) reveals the population of molecular triplets in optically excited thin films. Overall, our findings allow us to draw a comprehensive picture of the spin-dependent emission from intra- and intermolecular TADF OLEDs.
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Submitted 27 January, 2021; v1 submitted 28 June, 2020;
originally announced June 2020.
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Improved Heralded Schemes to Generate Entangled States From Single Photons
Authors:
F. V. Gubarev,
I. V. Dyakonov,
M. Yu. Saygin,
G. I. Struchalin,
S. S. Straupe,
S. P. Kulik
Abstract:
We present a novel semi-analytical methodology to construct optimal linear optical circuits for heralded production of 3-photon GHZ and 2-photon Bell states. We provide a detailed description and analysis of the resulting optical schemes, which deliver success probabilities of 1/54 and 2/27 for dual-rail encoded 3-GHZ and Bell states generation, respectively. Our results improve the known construc…
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We present a novel semi-analytical methodology to construct optimal linear optical circuits for heralded production of 3-photon GHZ and 2-photon Bell states. We provide a detailed description and analysis of the resulting optical schemes, which deliver success probabilities of 1/54 and 2/27 for dual-rail encoded 3-GHZ and Bell states generation, respectively. Our results improve the known constructive bounds on the success probabilities for 3-GHZ states and are of particular importance for a ballistic quantum computing model, for which these states provide an essential resource.
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Submitted 30 May, 2020; v1 submitted 6 April, 2020;
originally announced April 2020.
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Identifying Carbon as the Source of Visible Single Photon Emission from Hexagonal Boron Nitride
Authors:
Noah Mendelson,
Dipankar Chugh,
Jeffrey R. Reimers,
Tin S. Cheng,
Andreas Gottscholl,
Hu Long,
Christopher J. Mellor,
Alex Zettl,
Vladimir Dyakonov,
Peter H. Beton,
Sergei V. Novikov,
Chennupati Jagadish,
Hark Hoe Tan,
Michael J. Ford,
Milos Toth,
Carlo Bradac,
Igor Aharonovich
Abstract:
Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by…
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Single photon emitters (SPEs) in hexagonal boron nitride (hBN) have garnered significant attention over the last few years due to their superior optical properties. However, despite the vast range of experimental results and theoretical calculations, the defect structure responsible for the observed emission has remained elusive. Here, by controlling the incorporation of impurities into hBN and by comparing various synthesis methods, we provide direct evidence that the visible SPEs are carbon related. Room temperature optically detected magnetic resonance (ODMR) is demonstrated on ensembles of these defects. We also perform ion implantation experiments and confirm that only carbon implantation creates SPEs in the visible spectral range. Computational analysis of hundreds of potential carbon-based defect transitions suggest that the emission results from the negatively charged VBCN- defect, which experiences long-range out-of-plane deformations and is environmentally sensitive. Our results resolve a long-standing debate about the origin of single emitters at the visible range in hBN and will be key to deterministic engineering of these defects for quantum photonic devices.
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Submitted 20 April, 2020; v1 submitted 2 March, 2020;
originally announced March 2020.
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On the Absence of Triplet Exciton Loss Pathways in Non-Fullerene Acceptor based Organic Solar Cells
Authors:
Maria S. Kotova,
Giacomo Londi,
Johannes Junker,
Stefanie Dietz,
Alberto Privitera,
Kristofer Tvingstedt,
David Beljonne,
Andreas Sperlich,
Vladimir Dyakonov
Abstract:
We investigate the viability of highly efficient organic solar cells (OSCs) based on non-fullerene acceptors (NFA) by taking into consideration efficiency loss channels and stability issues caused by triplet excitons (TE) formation. OSCs based on a blend of the conjugated donor polymer PBDB-T and ITIC as acceptor were fabricated and investigated with electrical, optical and spin-sensitive methods.…
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We investigate the viability of highly efficient organic solar cells (OSCs) based on non-fullerene acceptors (NFA) by taking into consideration efficiency loss channels and stability issues caused by triplet excitons (TE) formation. OSCs based on a blend of the conjugated donor polymer PBDB-T and ITIC as acceptor were fabricated and investigated with electrical, optical and spin-sensitive methods. The spin-Hamiltonian parameters of molecular TEs and charge transfer TEs in ITIC e.g., zero-field splitting and charge distribution, were calculated by Density Functional Theory (DFT) modelling. In addition, the energetic model describing the photophysical processes in the donor-acceptor blend was derived. Spin-sensitive photoluminescence measurements prove the formation of charge transfer (CT) states in the blend and the formation of TEs in the pure materials and the blend. However, no molecular TE signal is observed in the completed devices under working conditions by spin-sensitive electrical measurements. The absence of a molecular triplet state population allows to eliminate a charge carrier loss channel and irreversible photooxidation facilitated by long-lived triplet states. These results correlate well with the high power conversion efficiency of the PBDB-T:ITIC-based OSCs and their high stability.
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Submitted 7 April, 2020; v1 submitted 18 February, 2020;
originally announced February 2020.
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Getting the Right Twist: Influence of Donor-Acceptor Dihedral Angle on Exciton Kinetics and Singlet-Triplet Gap in Deep Blue Thermally Activated Delayed Fluorescence Emitter
Authors:
Sebastian Weissenseel,
Nikita A. Drigo,
Liudmila G. Kudriashova,
Markus Schmid,
Thomas Morgenstern,
Kun-Han Lin,
Antonio Prlj,
Clémence Corminboeuf,
Andreas Sperlich,
Wolfgang Brütting,
Mohammad Khaja Nazeeruddin,
Vladimir Dyakonov
Abstract:
Here, a novel deep blue emitter SBABz4 for use in organic light-emitting diodes (OLED) is investigated. The molecular design of the emitter enables thermally activated delayed fluorescence (TADF), which we examine by temperature-dependent time-resolved electroluminescence (trEL) and photoluminescence (trPL). We show that the dihedral angle between donor and acceptor strongly affects the oscillator…
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Here, a novel deep blue emitter SBABz4 for use in organic light-emitting diodes (OLED) is investigated. The molecular design of the emitter enables thermally activated delayed fluorescence (TADF), which we examine by temperature-dependent time-resolved electroluminescence (trEL) and photoluminescence (trPL). We show that the dihedral angle between donor and acceptor strongly affects the oscillator strength of the charge transfer state alongside the singlet-triplet gap. The angular dependence of the singlet-triplet gap is calculated by time-dependent density functional theory (TD-DFT). A gap of 15 meV is calculated for the relaxed ground state configuration of SBABz4 with a dihedral angle between the donor and acceptor moieties of 86°. Surprisingly, an experimentally obtained energy gap of 72+/-5 meV can only be explained by torsion angles in the range of 70°-75°. Molecular dynamics (MD) simulations showed that SBABz4 evaporated at high temperature acquires a distribution of torsion angles, which immediately leads to the experimentally obtained energy gap. Moreover, the emitter orientation anisotropy in a host matrix shows an 80% ratio of horizontally oriented dipoles, which is highly desirable for efficient light outcoupling. Understanding intramolecular donor-acceptor geometry in evaporated films is crucial for OLED applications, because it affects oscillator strength and TADF efficiency.
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Submitted 28 October, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Influence of irradiation on defect spin coherence in silicon carbide
Authors:
C. Kasper,
D. Klenkert,
Z. Shang,
D. Simin,
A. Sperlich,
H. Kraus,
C. Schneider,
S. Zhou,
M. Trupke,
W. Kada,
T. Ohshima,
V. Dyakonov,
G. V. Astakhov
Abstract:
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of…
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Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum properties, such as long room-temperature spin coherence and the possibility of downscaling to single-photon source level, they have proven to be promising candidates for a multitude of quantum information applications. One of the most crucial parameters of any quantum system is how long its quantum coherence can be preserved. By using the pulsed optically detected magnetic resonance (ODMR) technique, we investigate the spin-lattice relaxation time ($T_1$) and spin coherence time ($T_2$) of silicon vacancies in 4H-SiC created by neutron, electron and proton irradiation in a broad range of fluences. We also examine the effect of irradiation energy and sample annealing. We establish a robustness of the $T_1$ time against all types of irradiation and reveal a universal scaling of the $T_2$ time with the emitter density. Our results can be used to optimize the coherence properties of silicon vacancy qubits in SiC for specific tasks.
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Submitted 19 August, 2019;
originally announced August 2019.
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Optically and electrically excited intermediate electronic states in donor:acceptor based OLEDs
Authors:
Nikolai Bunzmann,
Sebastian Weissenseel,
Liudmila Kudriashova,
Jeannine Gruene,
Benjamin Krugmann,
Juozas Vidas Grazulevicius,
Andreas Sperlich,
Vladimir Dyakonov
Abstract:
Thermally activated delayed fluorescence (TADF) emitters consisting of donor and acceptor molecules are potentially highly interesting for electroluminescence (EL) applications. Their strong fluorescence emission is considered to be due to reverse intersystem crossing (RISC), in which energetically close triplet and singlet charge transfer (CT) states, also called exciplex states, are involved. In…
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Thermally activated delayed fluorescence (TADF) emitters consisting of donor and acceptor molecules are potentially highly interesting for electroluminescence (EL) applications. Their strong fluorescence emission is considered to be due to reverse intersystem crossing (RISC), in which energetically close triplet and singlet charge transfer (CT) states, also called exciplex states, are involved. In order to distinguish between different mechanisms and excited states involved, temperature-dependent spin-sensitive measurements on organic light-emitting diodes (OLEDs) and thin films are essential. In our work we apply continuous wave (cw) and time-resolved (tr) photoluminescence (PL) spectroscopy as well as spin-sensitive EL and PL detected magnetic resonance to films and OLED devices made of three different donor:acceptor combinations. Our results clearly show that triplet exciplex states are formed and contribute to delayed fluorescence (DF) via RISC in both electrically driven OLEDs and optically excited films. In the same sample set we also found molecular triplet excitons, which occurred only in PL experiments under optical excitation and for some material systems only at low temperatures. We conclude that in all investigated molecular systems exciplex states formed at the donor:acceptor interface are responsible for TADF in OLEDs with distinct activation energies. Molecular (local) triplet exciton states are also detectable, but only under optical excitation, while they are not found in OLEDs when excited states are generated electrically. We believe that the weakly bound emissive exciplex states and the strongly bound non-emissive molecular triplet excited states coexist in the TADF emitters, and it is imperative to distinguish between optical and electrical generation paths as they may involve different intermediate excited states.
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Submitted 10 January, 2020; v1 submitted 14 June, 2019;
originally announced June 2019.