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Phase transformation-induced superconducting aluminium-silicon alloy rings
Authors:
B. C. Johnson,
M. Stuiber,
D. L. Creedon,
A. Berhane,
L. H. Willems van Beveren,
S. Rubanov,
J. H. Cole,
V. Mourik,
A. R. Hamilton,
T. L. Duty,
J. C. McCallum
Abstract:
The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-…
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The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed.
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Submitted 12 July, 2022;
originally announced July 2022.
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A planar Al-Si Schottky Barrier MOSFET operated at cryogenic temperatures
Authors:
Wendy E. Purches,
Alessandro Rossi,
Ruichen Zhao,
Sergey Kafanov,
Timothy L. Duty,
Andrew S. Dzurak,
Sven Rogge,
Giuseppe C. Tettamanzi
Abstract:
Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and cha…
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Schottky Barrier (SB)-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a novel device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology.
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Submitted 9 August, 2015; v1 submitted 3 June, 2015;
originally announced June 2015.
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High Q-factor Sapphire Whispering Gallery Mode Microwave Resonator at Single Photon Energies and milli-Kelvin Temperatures
Authors:
Daniel L. Creedon,
Yarema Reshitnyk,
Warrick Farr,
John M. Martinis,
Timothy L. Duty,
Michael E. Tobar
Abstract:
The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T = 30 mK). The measurements were sensitive enough to observe saturation due to a highly detuned electron spin resonance, which limited the loss tangent of the material to about 2e-8 measured at 13.868 and 13.259 GHz. Smal…
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The microwave properties of a crystalline sapphire dielectric whispering gallery mode resonator have been measured at very low excitation strength (E/hf=1) and low temperatures (T = 30 mK). The measurements were sensitive enough to observe saturation due to a highly detuned electron spin resonance, which limited the loss tangent of the material to about 2e-8 measured at 13.868 and 13.259 GHz. Small power dependent frequency shifts were also measured which correspond to an added magnetic susceptibility of order 1e-9. This work shows that quantum limited microwave resonators with Q-factors > 1e8 are possible with the implementation of a sapphire whispering gallery mode system.
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Submitted 31 March, 2011; v1 submitted 31 March, 2011;
originally announced March 2011.
