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Roadmap on Photovoltaic Absorber Materials for Sustainable Energy Conversion
Authors:
James C. Blakesley,
Ruy S. Bonilla,
Marina Freitag,
Alex M. Ganose,
Nicola Gasparini,
Pascal Kaienburg,
George Koutsourakis,
Jonathan D. Major,
Jenny Nelson,
Nakita K. Noel,
Bart Roose,
Jae Sung Yun,
Simon Aliwell,
Pietro P. Altermatt,
Tayebeh Ameri,
Virgil Andrei,
Ardalan Armin,
Diego Bagnis,
Jenny Baker,
Hamish Beath,
Mathieu Bellanger,
Philippe Berrouard,
Jochen Blumberger,
Stuart A. Boden,
Hugo Bronstein
, et al. (61 additional authors not shown)
Abstract:
Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO<sub>2</sub>eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.…
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Photovoltaics (PVs) are a critical technology for curbing growing levels of anthropogenic greenhouse gas emissions, and meeting increases in future demand for low-carbon electricity. In order to fulfil ambitions for net-zero carbon dioxide equivalent (CO<sub>2</sub>eq) emissions worldwide, the global cumulative capacity of solar PVs must increase by an order of magnitude from 0.9 TWp in 2021 to 8.5 TWp by 2050 according to the International Renewable Energy Agency, which is considered to be a highly conservative estimate. In 2020, the Henry Royce Institute brought together the UK PV community to discuss the critical technological and infrastructure challenges that need to be overcome to address the vast challenges in accelerating PV deployment. Herein, we examine the key developments in the global community, especially the progress made in the field since this earlier roadmap, bringing together experts primarily from the UK across the breadth of the photovoltaics community. The focus is both on the challenges in improving the efficiency, stability and levelized cost of electricity of current technologies for utility-scale PVs, as well as the fundamental questions in novel technologies that can have a significant impact on emerging markets, such as indoor PVs, space PVs, and agrivoltaics. We discuss challenges in advanced metrology and computational tools, as well as the growing synergies between PVs and solar fuels, and offer a perspective on the environmental sustainability of the PV industry. Through this roadmap, we emphasize promising pathways forward in both the short- and long-term, and for communities working on technologies across a range of maturity levels to learn from each other.
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Submitted 30 October, 2023;
originally announced October 2023.
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High temperature equilibrium of 3D and 2D chalcogenide perovskites
Authors:
Prakriti Kayastha,
Devendra Tiwari,
Adam Holland,
Oliver S. Hutter,
Ken Durose,
Lucy D. Whalley,
Giulia Longo
Abstract:
Chalcogenide perovskites have been recently under the researchers spotlight as novel absorber materials for photovoltaic applications. BaZrS$_3$, the most investigated compound of this family, shows a high absorption coefficient, a bandgap of around 1.8 eV, and excellent environmental and thermal stability. In addition to the 3D perovskite BaZrS$_3$, the Ba-Zr-S compositional space contains variou…
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Chalcogenide perovskites have been recently under the researchers spotlight as novel absorber materials for photovoltaic applications. BaZrS$_3$, the most investigated compound of this family, shows a high absorption coefficient, a bandgap of around 1.8 eV, and excellent environmental and thermal stability. In addition to the 3D perovskite BaZrS$_3$, the Ba-Zr-S compositional space contains various 2-D Ruddlesden-Popper phases Ba$_{x+1}$Zr$_x$S$_{3x+1}$ (with $x=$ 1, 2, 3) which have recently been reported. In this work it will be shown that at high temperature the Gibbs free energies of 3D and 2D perovskites are very close, suggesting that 2D phases can be easily formed at high temperatures. The analysis of the product of the BaS and ZrS$_2$ solid-state reaction, in different stoichiometric conditions, present a mixture of BaZrS$_3$ and Ba$_4$Zr$_3$S$_{10}$. To carefully resolve the composition, XRD, SEM and EDS analysis were complemented with Raman spectroscopy. For this purpose, the phonon modes, and the consequent Raman spectra, were calculated for the 3D and 2D chalcogenide perovskites, as well as for the binary precursors. This thorough characterization demonstrates the thermodynamic limitations and experimental difficulties in forming phase-pure chalcogenide perovskites through solid state synthesis, and the importance of using multiple techniques to soundly resolve the composition of these chalcogenide materials.
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Submitted 3 May, 2023; v1 submitted 2 December, 2022;
originally announced December 2022.
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Electronic Properties of CdS/CdTe Solar Cells as Influenced by a Buffer Layer
Authors:
Y. G. Fedorenko,
J. D. Major,
A. Pressman,
L. Phillips,
K. Durose
Abstract:
We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the…
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We considered modification of the defect density of states in CdTe as influenced by a buffer layer in ZnO(ZnS, SnSe)/CdS/CdTe solar cells. Compared to the solar cells employing ZnO buffer layers, implementation of ZnSe and ZnS resulted in the lower net ionized acceptor concentration and the energy shift of the dominant deep trap levels to the midgap of CdTe. The results clearly indicated that the same defect was responsible for the inefficient do** and the formation of recombination centers in CdTe. This observation can be explained taking into account the effect of strain on the electronic properties of the grain boundary interface states in polycrystalline CdTe. In the conditions of strain, interaction of chlorine with the grain boundary point defects can be altered.
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Submitted 14 January, 2016; v1 submitted 26 November, 2015;
originally announced November 2015.
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Modification of electron states in CdTe absorber due to a buffer layer in CdS/CdTe solar cells
Authors:
Y. G. Fedorenko,
J. D. Major,
A. Pressman,
L. J. Phillips,
K. Durose
Abstract:
By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by…
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By application of the ac admittance spectroscopy method, the defect state energy distributions were determined in CdTe incorporated in thin film solar cell structures concluded on ZnO, ZnSe, and ZnS buffer layers. Together with the Mott-Schottky analysis, the results revealed a strong modification of the defect density of states and the concentration of the uncompensated acceptors as influenced by the choice of the buffer layer. In the solar cells formed on ZnSe and ZnS, the Fermi level and the energy position of the dominant deep trap levels were observed to shift closer to the midgap of CdTe suggesting the mid-gap states may act as recombination centers and impact the open-circuit voltage and the fill factor of the solar cells. For the deeper states, the broadening parameter was observed to increase indicating fluctuations of the charge on a microscopic scale. Such changes can be attributed to the grain-boundary strain and the modification of the charge trapped at the grain-boundary interface states in polycrystalline CdTe
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Submitted 28 October, 2015; v1 submitted 9 June, 2015;
originally announced June 2015.
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Growth and characterization of heteroepitaxial La-substituted BaSnO$_3$ films on SrTiO$_3$ (001) and SmScO$_3$ (110) substrates
Authors:
P. V. Wadekar,
J. Alaria,
M. O'Sullivan,
N. L. O. Flack,
T. D. Manning,
L. J. Phillips,
K. Durose,
O. Lozano,
S. Lucas,
J. B. Claridge,
M. J. Rosseinsky
Abstract:
Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD) under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch a…
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Heteroepitaxial growth of BaSnO$_3$ (BSO) and Ba$_{1-x}$La$_x$SnO$_3$ (x = 7 %) (LBSO) thin films on different perovskite single crystal (SrTiO$_3$ (001) and SmScO$_3$ (110)) substrates has been achieved by Pulsed Laser Deposition (PLD) under optimized deposition conditions. X-ray diffraction measurements indicate that the films on either of these substrates are relaxed due to the large mismatch and present a high degree of crystallinity with narrow rocking curves and smooth surface morphology while analytical quantification by proton induced x-ray emission (PIXE) confirms the stoichiometric La transfer from a polyphasic target, producing films with La contents above the bulk solubility limit. The films show degenerate semiconducting behavior on both substrates, with the observed room temperature resistivities, Hall mobilities and carrier concentrations of 4.4 $m Ωcm$, 10.11 $cm^2 V^{-1} s^{-1}$, and 1.38 $\cdot 10^{20} cm^{-3}$ on SmScO$_3$ and 7.8 $m Ωcm$, 5.8 $cm^2 V^{-1} s^{-1}$, and 1.36 $\cdot 10^{20} cm^{-3}$ on SrTiO$_3$ ruling out any extrinsic contribution from the substrate. The superior electrical properties observed on the SmScO3 substrate are attributed to reduction in dislocation density from the lower lattice mismatch.
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Submitted 23 May, 2014;
originally announced May 2014.
