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Indirect-to-direct bandgap transition in few-layer $β$-InSe as probed by photoluminescence spectroscopy
Authors:
Bogdan R. Borodin,
Ilya A. Eliseyev,
Aidar I. Galimov,
Lyubov V. Kotova,
Mikhail V. Durnev,
Tatiana V. Shubina,
Maxim V. Rakhlin
Abstract:
InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be sensitive to different peculiarities of the electronic structure leading to different results. In this work, we will focus on the luminescent properties of few-la…
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InSe is a promising material for a next-generation of two-dimensional electronic and optical devices, characteristics of which are largely determined by the type of band structure, direct or indirect. In general, different methods can be sensitive to different peculiarities of the electronic structure leading to different results. In this work, we will focus on the luminescent properties of few-layer $β$-InSe with a thickness of 6 to 75 monolayers (ML). Low-temperature micro-photoluminescence ($mu$-PL) studies show a sharp increase in PL intensity in the range of thicknesses from 16 to 20 monolayers, where, in addition, there is a singularity in the dependence of the work function on the thickness. Time-resolved photoluminescence spectroscopy (TRPL) reveals three characteristic PL decay times that differ from each other by about an order of magnitude. We associate the processes underlying the two faster decays with the recombination of electrons and holes between the band extrema, either directly or through the interband relaxation of holes. Their contributions to the total PL intensity increase significantly in the same thickness range, 16-20 MLs. On the contrary, the slowest contribution, which we attribute mainly to the defect-assisted recombination, prevails at a smaller number of monolayers and then noticeably decreases. These results indicate the indirect-to-direct bandgap transition near 16-20 MLs, which determines the range of applicability of a few-layer $β$-InSe for efficient light emitters.
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Submitted 27 August, 2023;
originally announced August 2023.
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Faraday and Kerr rotation due to photoinduced orbital magnetization in two-dimensional electron gas
Authors:
M. V. Durnev
Abstract:
We study theoretically the Faraday and Kerr rotation of a probe field due to the orbital magnetization of a two-dimensional electron gas induced by a circularly polarized pump. We develop a microscopic theory of these effects in the intraband spectral range based on the analytical solution of the kinetic equation for linear and parabolic energy dispersion of electrons and arbitrary scattering pote…
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We study theoretically the Faraday and Kerr rotation of a probe field due to the orbital magnetization of a two-dimensional electron gas induced by a circularly polarized pump. We develop a microscopic theory of these effects in the intraband spectral range based on the analytical solution of the kinetic equation for linear and parabolic energy dispersion of electrons and arbitrary scattering potential. We show that the spectral dependence of rotation angles and accompanying ellipticities experiences a sharp resonance when the probe and pump frequencies are close to each other. At the resonance, the Faraday and Kerr rotation angles are of the order of $0.1^\circ$ per 1~kW/cm$^2$ of the pump intensity in graphene samples, corresponding to a pump-induced synthetic magnetic field of about 0.1~T. We also analyze the influence of the dielectric contrast between dielectric media surrounding the two-dimensional electron gas on the rotation angles.
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Submitted 14 June, 2023;
originally announced June 2023.
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Photocurrents induced by structured light
Authors:
A. A. Gunyaga,
M. V. Durnev,
S. A. Tarasenko
Abstract:
Advances in manipulating the structure of optical beams enable the study of interaction between structured light and low-dimensional semiconductor systems. We explore the photocurrents in two-dimensional systems excited by such inhomogeneous radiation with structured field. Besides the contribition associated with the intensity gradient, the photocurrent contains contributions driven by the gradie…
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Advances in manipulating the structure of optical beams enable the study of interaction between structured light and low-dimensional semiconductor systems. We explore the photocurrents in two-dimensional systems excited by such inhomogeneous radiation with structured field. Besides the contribition associated with the intensity gradient, the photocurrent contains contributions driven by the gradients of the Stokes polarization parameters and the phase of the electromagnetic field. We develop a microscopic theory of the photocurrents induced by structured light and derive analytical expressions for all the photocurrent contributions at intraband transport of electrons. The theory is applied to analyze the radial and azimuthal photocurrents excited by twisted light beams carrying orbital angular momentum, and possible experiments to detect the photocurrents are discussed.
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Submitted 7 March, 2024; v1 submitted 13 June, 2023;
originally announced June 2023.
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Splitting of Dirac cones in HgTe quantum wells: Effects of crystallographic orientation, interface-, bulk-, and structure-inversion asymmetry
Authors:
M. V. Durnev,
G. V. Budkin,
S. A. Tarasenko
Abstract:
We develop a microscopic theory of the fine structure of Dirac states in $(0lh)$-grown HgTe/CdHgTe quantum wells (QWs), where $l$ and $h$ are the Miller indices. It is shown that bulk, interface, and structure inversion asymmetry causes the anticrossing of levels even at zero in-plane wave vector and lifts the Dirac state degeneracy. In the QWs of critical thickness, the two-fold degenerate Dirac…
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We develop a microscopic theory of the fine structure of Dirac states in $(0lh)$-grown HgTe/CdHgTe quantum wells (QWs), where $l$ and $h$ are the Miller indices. It is shown that bulk, interface, and structure inversion asymmetry causes the anticrossing of levels even at zero in-plane wave vector and lifts the Dirac state degeneracy. In the QWs of critical thickness, the two-fold degenerate Dirac cone gets split into non-degenerate Weyl cones. The splitting and the Weyl point positions dramatically depend on the QW crystallographic orientation. We calculate the splitting parameters related to bulk, interface, and structure inversion asymmetry and derive the effective Hamiltonian of the Dirac states. Further, we obtain an analytical expression for the energy spectrum and discuss the spectrum for (001)-, (013)- and (011)-grown QWs.
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Submitted 14 June, 2022;
originally announced June 2022.
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Second harmonic generation at the edge of a two-dimensional electron gas
Authors:
M. V. Durnev,
S. A. Tarasenko
Abstract:
We show that driving a two-dimensional electron gas by an in-plane electric field oscillating at the frequency $ω$ gives rise to an electric current at $2ω$ flowing near the edge of the system. This current has both parallel and perpendicular to the edge components, which emit electromagnetic waves at $2ω$ with different polarizations. We develop a microscopic theory of such an edge second harmoni…
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We show that driving a two-dimensional electron gas by an in-plane electric field oscillating at the frequency $ω$ gives rise to an electric current at $2ω$ flowing near the edge of the system. This current has both parallel and perpendicular to the edge components, which emit electromagnetic waves at $2ω$ with different polarizations. We develop a microscopic theory of such an edge second harmonic generation and calculate the edge current at $2ω$ in different regimes of electron transport and electric field screening. We also show that at high frequencies the spatial profile of the edge current contains oscillations caused by excitation of plasma waves.
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Submitted 8 April, 2022;
originally announced April 2022.
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Ensemble spin relaxation of shallow donor qubits in ZnO
Authors:
Vasileios Niaouris,
Mikhail V. Durnev,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Christian Zimmermann,
Aswin Vishnuradhan,
Y. Kozuka,
M. Kawasaki,
Kai-Mei C. Fu
Abstract:
We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic ex…
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We present an experimental and theoretical study of the longitudinal electron spin relaxation ($T_1$) of shallow donors in the direct band-gap semiconductor ZnO. $T_1$ is measured via resonant excitation of the Ga donor-bound exciton. $T_1$ exhibits an inverse-power dependence on magnetic field $T_1\propto B^{-n}$, with $4\leq n\leq 5$, over a field range of 1.75 T to 7 T. We derive an analytic expression for the donor spin-relaxation rate due to spin-orbit (admixture mechanism) and electron-phonon (piezoelectric) coupling for the wurtzite crystal symmetry. Excellent quantitative agreement is found between experiment and theory suggesting the admixture spin-orbit mechanism is the dominant contribution to $T_1$ in the measured magnetic field range. Temperature and excitation-energy dependent measurements indicate a donor density dependent interaction may contribute to small deviations between experiment and theory. The longest $T_1$ measured is 480 ms at 1.75 T with increasing $T_1$ at smaller fields theoretically expected. This work highlights the extremely long longitudinal spin-relaxation time for ZnO donors due to their small spin-orbit coupling.
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Submitted 15 April, 2022; v1 submitted 22 November, 2021;
originally announced November 2021.
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Photovoltaic Hall effect in two-dimensional electron gas: Kinetic theory
Authors:
M. V. Durnev
Abstract:
We study theoretically transverse photoconductivity induced by circularly polarized radiation, i.e. the photovoltaic Hall effect, and linearly polarized radiation causing intraband optical transitions in two-dimensional electron gas (2DEG). We develop a microscopic theory of these effects based on analytical solution of the Boltzmann equation for arbitrary electron spectrum and scattering mechanis…
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We study theoretically transverse photoconductivity induced by circularly polarized radiation, i.e. the photovoltaic Hall effect, and linearly polarized radiation causing intraband optical transitions in two-dimensional electron gas (2DEG). We develop a microscopic theory of these effects based on analytical solution of the Boltzmann equation for arbitrary electron spectrum and scattering mechanism. We calculate the transverse photoconductivity of 2DEG with parabolic and linear dispersion for short-range and Coulomb scatterers at different temperatures. We show that the transverse electric current is significantly enhanced at frequencies comparable to the inverse energy relaxation time, whereas at higher frequencies the excitation spectrum and the direction of current depend on the scattering mechanism. We also analyse the effect of thermalization processes caused by electron-electron collisions on the photoconductivity.
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Submitted 1 June, 2021;
originally announced June 2021.
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Optical spin control and coherence properties of acceptor bound holes in strained GaAs
Authors:
Xiayu Linpeng,
Todd Karin,
Mikhail V. Durnev,
Mikhail M. Glazov,
Rüdiger Schott,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial la…
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Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei is considerably weaker than that for electrons, leading to potentially longer coherence times. Here we demonstrate optical pum** and coherent population trap** for acceptor-bound holes in a strained GaAs epitaxial layer. We find $μ$s-scale longitudinal spin relaxation time T$_1$ and an inhomogeneous dephasing time T$_2^*$ of $\sim$7~ns. We attribute the spin relaxation mechanism to a combination effect of a hole-phonon interaction through the deformation potentials and a heavy-hole light-hole mixing in an in-plane magnetic field. We attribute the short T$_2^*$ to g-factor broadening due to strain inhomogeneity. T$_1$ and T$_2^*$ are quantitatively calculated based on these mechanisms and compared with the experimental results. While the hyperfine-mediated decoherence is mitigated, our results highlight the important contribution of strain to relaxation and dephasing of acceptor-bound hole spins.
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Submitted 13 December, 2020;
originally announced December 2020.
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Edge photogalvanic effect caused by optical alignment of carrier momenta in 2D Dirac materials
Authors:
M. V. Durnev,
S. A. Tarasenko
Abstract:
We show that the inter-band absorption of radiation in a 2D Dirac material leads to a direct electric current flowing at sample edges. The photocurrent originates from the momentum alignment of electrons and holes and is controlled by the radiation polarization. We develop a microscopic theory of such an edge photogalvanic effect and calculate the photocurrent for gapped and gapless 2D Dirac mater…
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We show that the inter-band absorption of radiation in a 2D Dirac material leads to a direct electric current flowing at sample edges. The photocurrent originates from the momentum alignment of electrons and holes and is controlled by the radiation polarization. We develop a microscopic theory of such an edge photogalvanic effect and calculate the photocurrent for gapped and gapless 2D Dirac materials, also in the presence of a static magnetic field which introduces additional imbalance between the electron and hole currents. Further, we show that the photocurrent can be considerably multiplied in a ratchet-like structure with an array of narrow strips.
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Submitted 19 November, 2020;
originally announced November 2020.
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Edge photocurrent in bilayer graphene due to inter-Landau-level transitions
Authors:
S. Candussio,
M. V. Durnev,
S. Slizovskiy,
T. Jötten,
J. Keil,
V. V. Bel'kov,
J. Yin,
Y. Yang,
S. -K. Son,
A. Mishchenko,
V. Fal'ko,
S. D. Ganichev
Abstract:
We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotro…
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We report the observation of the resonant excitation of edge photocurrents in bilayer graphene subjected to terahertz radiation and a magnetic field. The resonantly excited edge photocurrent is observed for both inter-band (at low carrier densities) and intra-band (at high densities) transitions between Landau levels (LL). While the intra-band LL transitions can be traced to the classical cyclotron resonance (CR) and produce strong resonant features, the inter-band-LL resonances have quantum nature and lead to the weaker features in the measured photocurrent spectra. The magnitude and polarization properties of the observed features agree with the semiclassical theory of the intra-band edge photogalvanic effect, including its Shubnikov-de-Haas oscillations at low temperatures.
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Submitted 24 February, 2021; v1 submitted 12 November, 2020;
originally announced November 2020.
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Edge photocurrent driven by THz electric field in bi-layer graphene
Authors:
S. Candussio,
M. V. Durnev,
S. A. Tarasenko,
J. Yin,
J. Keil,
Y. Yang,
S. -K. Son,
A. Mishchenko,
H. Plank,
V. V. Bel'kov,
S. Slizovskiy,
V. Fal'ko,
S. D. Ganichev
Abstract:
We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in t…
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We report on the observation of edge electric currents excited in bi-layer graphene by terahertz laser radiation. We show that the current generation belongs to the class of second order in electric field phenomena and is controlled by the orientation of the THz electric field polarization plane. Additionally, applying a small magnetic field normal to the graphene plane leads to a phase shift in the polarization dependence. Increasing the magnetic field strength, the current starts to exhibit 1/B-magnetooscillations with a period consistent with that of the Shubnikov-de-Haas effect and amplitude by an order of magnitude larger as compared to the current at zero magnetic field measured under the same conditions. The microscopic theory developed shows that the current is formed in the edges vicinity limited by the mean-free path of carriers and the screening length of the high-frequency electric field. The current originates from the alignment of the free carrier momenta and dynamic accumulation of charge at the edges, where the P-symmetry is naturally broken. The observed magnetooscillations of the photocurrent are attributed to the formation of Landau levels.
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Submitted 15 June, 2020; v1 submitted 4 May, 2020;
originally announced May 2020.
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Effects of electron-hole asymmetry on electronic structure of helical edge states in HgTe/HgCdTe quantum wells
Authors:
M. V. Durnev
Abstract:
We study the effects of electron-hole asymmetry on the electronic structure of helical edge states in HgTe/HgCdTe quantum wells. In the framework of the four-band kp-model, which takes into account the absence of a spatial inversion centre, we obtain analytical expressions for the energy spectrum and wave functions of edge states, as well as the effective g-factor tensor and matrix elements of ele…
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We study the effects of electron-hole asymmetry on the electronic structure of helical edge states in HgTe/HgCdTe quantum wells. In the framework of the four-band kp-model, which takes into account the absence of a spatial inversion centre, we obtain analytical expressions for the energy spectrum and wave functions of edge states, as well as the effective g-factor tensor and matrix elements of electro-dipole optical transitions between the spin branches of the edge electrons. We show that when two conditions are simultaneously satisfied -- electron-hole asymmetry and the absence of an inversion centre -- the spectrum of edge electrons deviates from the linear one, in that case we obtain corrections to the linear spectrum.
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Submitted 19 December, 2019;
originally announced December 2019.
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Microscopic model of stacking-fault potential and exciton wave function in GaAs
Authors:
Mikhail V. Durnev,
Mikhail M. Glazov,
Xiayu Linpeng,
Maria L. K. Viitaniemi,
Bethany Matthews,
Steven R. Spurgeon,
P. V. Sushko,
Andreas D. Wieck,
Arne Ludwig,
Kai-Mei C. Fu
Abstract:
Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated…
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Two-dimensional stacking fault defects embedded in a bulk crystal can provide a homogeneous trap** potential for carriers and excitons. Here we utilize state-of-the-art structural imaging coupled with density functional and effective-mass theory to build a microscopic model of the stacking-fault exciton. The diamagnetic shift and exciton dipole moment at different magnetic fields are calculated and compared with the experimental photoluminescence of excitons bound to a single stacking fault in GaAs. The model is used to further provide insight into the properties of excitons bound to the double-well potential formed by stacking fault pairs. This microscopic exciton model can be used as an input into models which include exciton-exciton interactions to determine the excitonic phases accessible in this system.
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Submitted 1 November, 2019;
originally announced November 2019.
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High-frequency nonlinear transport and photogalvanic effects in two-dimensional topological insulators
Authors:
M. V. Durnev,
S. A. Tarasenko
Abstract:
Excitation of a topological insulator by a high-frequency electric field of a laser radiation leads to a dc electric current in the helical edge channel whose direction and magnitude are sensitive to the radiation polarization and depend on the physical properties of the edge. We present an overview of theoretical and experimental studies of such edge photoelectric effects in two-dimensional topol…
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Excitation of a topological insulator by a high-frequency electric field of a laser radiation leads to a dc electric current in the helical edge channel whose direction and magnitude are sensitive to the radiation polarization and depend on the physical properties of the edge. We present an overview of theoretical and experimental studies of such edge photoelectric effects in two-dimensional topological insulators based on semiconductor quantum wells. First, we give a phenomenological description of edge photocurrents, which may originate from the photogalvanic effects or the photon drag effects, for edges of all possible symmetry. Then, we discuss microscopic mechanisms of photocurrent generation for different types of optical transitions involving helical edge states. They include direct and indirect optical transitions within the edge channel and edge-to-bulk optical transitions.
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Submitted 14 January, 2019;
originally announced January 2019.
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Edge currents driven by terahertz radiation in graphene in quantum Hall regime
Authors:
H. Plank,
M. V. Durnev,
S. Candussio,
J. Pernul,
K. -M. Dantscher,
E. Mönch,
A. Sandner,
J. Eroms,
D. Weiss,
V. V. Belkov,
S. A. Tarasenko,
S. D. Ganichev
Abstract:
We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of…
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We observe that the illumination of unbiased graphene in the quantum Hall regime with polarized terahertz laser radiation results in a direct edge current. This photocurrent is caused by an imbalance of persistent edge currents, which are driven out of thermal equilibrium by indirect transitions within the chiral edge channel. The direction of the edge photocurrent is determined by the polarity of the external magnetic field, while its magnitude depends on the radiation polarization. The microscopic theory developed in this paper describes well the experimental data.
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Submitted 4 July, 2018;
originally announced July 2018.
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Optical properties of helical edge channels in zinc-blende-type topological insulators: Selection rules, circular and linear dichroism, circular and linear photocurrents
Authors:
M. V. Durnev,
S. A. Tarasenko
Abstract:
We develop a theory of electron-photon interaction for helical edge channels in two-dimensional topological insulators based on zinc-blende-type quantum wells. It is shown that the lack of space inversion symmetry in such structures enables the electro-dipole optical transitions between the spin branches of the topological edge states. Further, we demonstrate the linear and circular dichroism asso…
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We develop a theory of electron-photon interaction for helical edge channels in two-dimensional topological insulators based on zinc-blende-type quantum wells. It is shown that the lack of space inversion symmetry in such structures enables the electro-dipole optical transitions between the spin branches of the topological edge states. Further, we demonstrate the linear and circular dichroism associated with the edge states and the generation of edge photocurrents controlled by radiation polarization.
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Submitted 11 May, 2018;
originally announced May 2018.
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Electrically tunable dynamic nuclear spin polarization in GaAs quantum dots at zero magnetic field
Authors:
M. Manca,
G. Wang,
T. Kuroda,
S. Shree,
A. Balocchi,
P. Renucci,
X. Marie,
M. V. Durnev,
M. M. Glazov,
K. Sakoda,
T. Mano,
T. Amand,
B. Urbaszek
Abstract:
In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear p…
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In III-V semiconductor nano-structures the electron and nuclear spin dynamics are strongly coupled. Both spin systems can be controlled optically. The nuclear spin dynamics is widely studied, but little is known about the initialization mechanisms. Here we investigate optical pum** of carrier and nuclear spins in charge tunable GaAs dots grown on 111A substrates. We demonstrate dynamic nuclear polarization (DNP) at zero magnetic field in a single quantum dot for the positively charged exciton X$^+$ state transition. We tune the DNP in both amplitude and sign by variation of an applied bias voltage V$_g$. Variation of $Δ$V$_g$ of the order of 100 mV changes the Overhauser splitting (nuclear spin polarization) from -30 $μ$eV (-22 %) to +10 $μ$eV (+7 %), although the X$^+$ photoluminescence polarization does not change sign over this voltage range. This indicates that absorption in the structure and energy relaxation towards the X$^+$ ground state might provide favourable scenarios for efficient electron-nuclear spin flip-flops, generating DNP during the first tens of ps of the X$^+$ lifetime which is of the order of hundreds of ps. Voltage control of DNP is further confirmed in Hanle experiments.
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Submitted 27 March, 2018; v1 submitted 2 February, 2018;
originally announced February 2018.
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Zeeman Splitting and Inverted Polarization of Biexciton Emission in Monolayer WS2
Authors:
Philipp Nagler,
Mariana V. Ballottin,
Anatolie A. Mitioglu,
Mikhail V. Durnev,
Takashi Taniguchi,
Kenji Watanabe,
Alexey Chernikov,
Christian Schüller,
Mikhail M. Glazov,
Peter C. M. Christianen,
Tobias Korn
Abstract:
We investigate the magnetic-field-induced splitting of biexcitons in monolayer WS$_2$ using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed $g$ factor of the biexciton amounts to $-3.89$, closely matching the $g$ factor of the neutral exciton. The biexciton emission shows an inverted circular field-induced polarization upon linearly pol…
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We investigate the magnetic-field-induced splitting of biexcitons in monolayer WS$_2$ using polarization-resolved photoluminescence spectroscopy in out-of-plane magnetic fields up to 30 T. The observed $g$ factor of the biexciton amounts to $-3.89$, closely matching the $g$ factor of the neutral exciton. The biexciton emission shows an inverted circular field-induced polarization upon linearly polarized excitation, i.e. it exhibits preferential emission from the high-energy peak in a magnetic field. This phenomenon is explained by taking into account the configuration of the biexciton constituents in momentum space and their respective energetic behavior in magnetic fields. Our findings reveal the critical role of dark excitons in the composition of this many-body state.
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Submitted 28 January, 2018;
originally announced January 2018.
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Photogalvanic probing of helical edge channels in 2D HgTe topological insulators
Authors:
K. -M. Dantscher,
D. A. Kozlov,
M. T. Scherr,
S. Gebert,
J. Baerenfaenger,
M. V. Durnev,
S. A. Tarasenko,
V. V. Bel'kov,
N. N. Mikhailov,
S. A. Dvoretsky,
Z. D. Kvon,
D. Weiss,
S. D. Ganichev
Abstract:
We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in…
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We report on the observation of a circular photogalvanic current excited by terahertz (THz) laser radiation in helical edge channels of HgTe-based 2D topological insulators (TIs). The direction of the photocurrent reverses by switching the radiation polarization from right-handed to left-handed one and, for fixed photon helicity, is opposite for the opposite edges. The photocurrent is detected in a wide range of gate voltages. With decreasing the Fermi level below the conduction band bottom, the current emerges, reaches a maximum, decreases, changes its sign close to the charge neutrality point (CNP), and again rises. Conductance measured over a 7 $μ$m distance at CNP approaches 2e2/h, the value characteristic for ballistic transport in 2D TIs. The data reveal that the photocurrent is caused by photoionization of helical edge electrons to the conduction band. We discuss the microscopic model of this phenomenon and compare calculations with the experimental data.
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Submitted 28 December, 2016;
originally announced December 2016.
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Inverse-phase Rabi oscillations in semiconductor microcavities
Authors:
A. V. Trifonov,
N. E. Kopteva,
M. V. Durnev,
I. Ya. Gerlovin,
R. V. Cherbunin,
A. Tzimis,
S. I. Tsintzos,
Z. Hatzopoulos,
P. G. Savvidis,
A. V. Kavokin
Abstract:
We study experimentally the oscillations of a non stationary transient signal of a semiconductor microcavity with embedded InGaAs quantum wells. The oscillations occur as a result of quantum beats between the upper and lower polariton modes due to the strong exciton-photon coupling in the microcavity sample (Rabi oscillations). The registration of spectrally resolved signal has allowed for separat…
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We study experimentally the oscillations of a non stationary transient signal of a semiconductor microcavity with embedded InGaAs quantum wells. The oscillations occur as a result of quantum beats between the upper and lower polariton modes due to the strong exciton-photon coupling in the microcavity sample (Rabi oscillations). The registration of spectrally resolved signal has allowed for separate observation of oscillations at the eigenfrequencies of two polariton modes. Surprisingly, the observed oscillations measured at the lower and upper polariton modes have opposite phases. We demonstrate theoretically that the opposite-phase oscillations are caused by the pump-induced modification of polariton Hopfield coefficients, which govern the ratio of exciton and photon components in each of the polartion modes. Such a behaviour is a fundamental feature of the quantum beats of coupled light-matter states. In contrast, the reference pump-probe experiment performed for the pure excitonic states in a quantum well heterostructure with no microcavity revealed the in-phase oscillations of the pump-probe signals measured at different excitonic levels.
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Submitted 12 December, 2016; v1 submitted 1 December, 2016;
originally announced December 2016.
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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
M. V. Durnev,
J. Loher,
D. Schuh,
D. Bougeard,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting…
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Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studied in magnetic field parallel and tilted with respect to the sample normal. Effective electron-hole g-factor has been found by measurement of splitting of polarized magneto-PL lines. Lande factors of electrons have been calculated using the 14-band kp method and g-factor of holes was determined by subtracting the calculated contribution of the electrons from the effective electron-hole g-factor. Anisotropy of the hole g-factor has been studied applying tilted magnetic field.
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Submitted 11 October, 2016;
originally announced October 2016.
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Atomically inspired $k \cdot p$ approach and valley Zeeman effect in transition metal dichalcogenide monolayers
Authors:
D. V. Rybkovskiy,
I. C. Gerber,
M. V. Durnev
Abstract:
We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing tight-binding (TB) models in the vicinity of $K^\pm$-points. First, we used TB models existing in literature to derive systematic parametrizations for different mate…
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We developed a six-band $k \cdot p$ model that describes the electronic states of monolayer transition metal dichalcogenides (TMDCs) in $K$-valleys. The set of parameters for the $k \cdot p$ model is uniquely determined by decomposing tight-binding (TB) models in the vicinity of $K^\pm$-points. First, we used TB models existing in literature to derive systematic parametrizations for different materials, including MoS$_2$, WS$_2$, MoSe$_2$ and WSe$_2$. Then, by using the derived six-band $k \cdot p$ Hamiltonian we calculated effective masses, Landau levels, and the effective exciton $g$-factor $g_{X^0}$ in different TMDCs. We showed that TB parameterizations existing in literature result in small absolute values of $g_{X^0}$, which are far from the experimentally measured $g_{X^0} \approx -4$. To further investigate this issue we derived two additional sets of $k \cdot p$ parameters by develo** our own TB parameterizations based on simultaneous fitting of ab-initio calculated, within the density functional (DFT) and $GW$ approaches, energy dispersion and the value of $g_{X^0}$. We showed that the change in TB parameters, which only slightly affects the dispersion of higher conduction and deep valence bands, may result in a significant increase of $|g_{X^0}|$, yielding close-to-experiment values of $g_{X^0}$. Such a high parameter sensitivity of $g_{X^0}$ opens a way to further improvement of DFT and TB models.
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Submitted 9 October, 2016;
originally announced October 2016.
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Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors
Authors:
Todd Karin,
Xiayu Linpeng,
M. V. Durnev,
Russell Barbour,
M. M. Glazov,
E. Ya. Sherman,
Simon Watkins,
Satoru Seto,
Kai-Mei C. Fu
Abstract:
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density a…
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We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$, $0.4~\text{ms}$ and $1.2~\text{ms}$, respectively. In GaAs and InP at low magnetic field, up to $\sim2~\text{T}$, the spin-relaxation mechanism is strongly density and temperature dependent and is attributed to the random precession of the electron spin in hyperfine fields caused by the lattice nuclear spins. In all three semiconductors at high magnetic field, we observe a power-law dependence ${T_1 \propto B^{-ν}}$ with ${3\lesssim ν\lesssim 4}$. Our theory predicts that the direct spin-phonon interaction is important in all three materials in this regime in contrast to quantum dot structures. In addition, the "admixture" mechanism caused by Dresselhaus spin-orbit coupling combined with single-phonon processes has a comparable contribution in GaAs. We find excellent agreement between high-field theory and experiment for GaAs and CdTe with no free parameters, however a significant discrepancy exists for InP.
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Submitted 19 May, 2016;
originally announced May 2016.
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Hyperfine coupling of hole and nuclear spins in symmetric GaAs quantum dots
Authors:
M. Vidal,
M. V. Durnev,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots.…
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In self assembled III-V semiconductor quantum dots, valence holes have longer spin coherence times than the conduction electrons, due to their weaker coupling to nuclear spin bath fluctuations. Prolonging hole spin stability relies on a better understanding of the hole to nuclear spin hyperfine coupling which we address both in experiment and theory in the symmetric (111) GaAs/AlGaAs droplet dots. In magnetic fields applied along the growth axis, we create a strong nuclear spin polarization detected through the positively charged trion X$^+$ Zeeman and Overhauser splittings. The observation of four clearly resolved photoluminescence lines - a unique property of the (111) nanosystems - allows us to measure separately the electron and hole contribution to the Overhauser shift. The hyperfine interaction for holes is found to be about five times weaker than that for electrons. Our theory shows that this ratio depends not only on intrinsic material properties but also on the dot shape and carrier confinement through the heavy-hole mixing, an opportunity for engineering the hole-nuclear spin interaction by tuning dot size and shape.
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Submitted 9 March, 2016;
originally announced March 2016.
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Giant permanent dipole moment of 2D excitons bound to a single stacking fault
Authors:
Todd Karin,
Xiayu Linpeng,
M. M. Glazov,
M. V. Durnev,
E. L. Ivchenko,
Sarah Harvey,
Ashish K. Rai,
Arne Ludwig,
Andreas D. Wieck,
Kai-Mei C. Fu
Abstract:
We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential lea…
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We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum ${\lesssim 80~μ\text{eV} }$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment (${\gtrsim e \cdot 10~\text{nm}}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.
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Submitted 6 June, 2016; v1 submitted 15 January, 2016;
originally announced January 2016.
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Magnetic field effects on edge and bulk states in topological insulators based on HgTe/CdHgTe quantum wells with strong natural interface inversion asymmetry
Authors:
M. V. Durnev,
S. A. Tarasenko
Abstract:
We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnet…
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We present a theory of the electron structure and the Zeeman effect for the helical edge states emerging in two-dimensional topological insulators based on HgTe/HgCdTe quantum wells with strong natural interface inversion asymmetry. The interface inversion asymmetry, reflecting the real atomistic structure of the quantum well, drastically modifies both bulk and edge states. For the in-plane magnetic field, this asymmetry leads to a strong anisotropy of the edge-state effective $g$-factor which becomes dependent on the edge orientation. The interface inversion asymmetry also couples the counter propagating edge states in the out-of-plane magnetic field leading to the opening of the gap in the edge-state spectrum by arbitrary small fields.
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Submitted 24 February, 2016; v1 submitted 16 December, 2015;
originally announced December 2015.
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Spin-dependent coherent transport of two-dimensional excitons
Authors:
M. V. Durnev,
M. M. Glazov
Abstract:
We propose a theory of interference contributions to the two-dimensional exciton diffusion coefficient. The theory takes into account four spin states of the heavy-hole exciton. An interplay of the single particle, electron and hole, spin splittings with the electron-hole exchange interaction gives rise to either localization or antilocalization behavior of excitons depending on the system paramet…
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We propose a theory of interference contributions to the two-dimensional exciton diffusion coefficient. The theory takes into account four spin states of the heavy-hole exciton. An interplay of the single particle, electron and hole, spin splittings with the electron-hole exchange interaction gives rise to either localization or antilocalization behavior of excitons depending on the system parameters. Possible experimental manifestations of exciton interference are discussed.
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Submitted 10 December, 2015;
originally announced December 2015.
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Magneto-spectroscopy of excited states in charge-tunable GaAs/AlGaAs [111] quantum dots
Authors:
M. V. Durnev,
M. Vidal,
L. Bouet,
T. Amand,
M. M. Glazov,
E. L. Ivchenko,
P. Zhou,
G. Wang,
T. Mano,
N. Ha,
T. Kuroda,
X. Marie,
K. Sakoda,
B. Urbaszek
Abstract:
We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescen…
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We present a combined experimental and theoretical study of highly charged and excited electron-hole complexes in strain-free (111) GaAs/AlGaAs quantum dots grown by droplet epitaxy. We address the complexes with one of the charge carriers residing in the excited state, namely, the ``hot'' trions X$^{-*}$ and X$^{+*}$, and the doubly negatively charged exciton X$^{2-}$. Our magneto-photoluminescence experiments performed on single quantum dots in the Faraday geometry uncover characteristic emission patterns for each excited electron-hole complex, which are very different from the photoluminescence spectra observed in (001)-grown quantum dots. We present a detailed theory of the fine structure and magneto-photoluminescence spectra of X$^{-*}$, X$^{+*}$ and X$^{2-}$ complexes, governed by the interplay between the electron-hole Coulomb exchange interaction and the heavy-hole mixing, characteristic for these quantum dots with a trigonal symmetry. Comparison between experiment and theory of the magneto-photoluminescence allows for precise charge state identification, as well as extraction of electron-hole exchange interaction constants and $g$-factors for the charge carriers occupying excited states.
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Submitted 25 November, 2015;
originally announced November 2015.
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Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
H. Plank,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
I. V. Rozhansky,
S. V. Ivanov,
D. R. Yakovlev,
S. D. Ganichev
Abstract:
We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field…
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We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presence of a magnetic field applied in the Faraday geometry both lines split into two circularly polarized components. While temperature and magnetic field dependences of the splitting are well described by the Brillouin function, providing an evidence for exchange interaction with spin polarized manganese ions, the value of the splitting exceeds the expected value of the giant Zeeman splitting by two orders of magnitude for a given Mn density. Possible reasons of this striking observation are discussed.
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Submitted 21 February, 2015;
originally announced February 2015.
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Split Dirac cones in HgTe/CdTe quantum wells due to symmetry-enforced level anticrossing at interfaces
Authors:
S. A. Tarasenko,
M. V. Durnev,
M. O. Nestoklon,
E. L. Ivchenko,
Jun-Wei Luo,
Alex Zunger
Abstract:
We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectr…
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We describe the fine structure of Dirac states in HgTe/CdHgTe quantum wells of critical and close-to-critical thickness and demonstrate the formation of an anticrossing gap between the tips of the Dirac cones driven by interface inversion asymmetry. By combining symmetry analysis, atomistic calculations, and k-p theory with interface terms, we obtain a quantitative description of the energy spectrum and extract the interface mixing coefficient. The zero-magnetic-field splitting of Dirac cones can be experimentally revealed in studying magnetotransport phenomena, cyclotron resonance, Raman scattering, or THz radiation absorption.
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Submitted 7 November, 2014;
originally announced November 2014.
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Charge tuning in [111] grown GaAs droplet quantum dots
Authors:
L. Bouet,
M. Vidal,
T. Mano,
N. Ha,
T. Kuroda,
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
X. Marie,
T. Amand,
K. Sakoda,
G. Wang,
B. Urbaszek
Abstract:
We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence…
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We demonstrate charge tuning in strain free GaAs/AlGaAs quantum dots (QDs) grown by droplet epitaxy on a GaAs(111)A substrate. Application of a bias voltage allows the controlled charging of the QDs from $-3|e|$ to $+2|e|$. The resulting changes in QD emission energy and exciton fine-structure are recorded in micro-photoluminescence experiments at T=4K. We uncover the existence of excited valence and conduction states, in addition to the s-shell-like ground state. We record a second series of emission lines about 25meV above the charged exciton emission coming from excited charged excitons. For these excited interband transitions a negative diamagnetic shift of large amplitude is uncovered in longitudinal magnetic fields.
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Submitted 24 July, 2014;
originally announced July 2014.
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Excited states of exciton-polariton condensates in 2D and 1D harmonic traps
Authors:
C. Trallero-Giner,
M. V. Durnev,
Y. Núñez Fernández,
M. I. Vasilevskiy,
V. López-Richard,
A. Kavokin
Abstract:
We present a theoretical description of Bogolyubov-type excitations of exciton-polariton Bose-Einstein condensates (BECs) in semiconductor microcavities. For a typical two dimensional (2D) BEC we focus on two limiting cases, the weak- and strong-coupling regimes, where a perturbation theory and the Thomas-Fermi approximation, respectively, are valid. We calculate integrated scattering intensity sp…
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We present a theoretical description of Bogolyubov-type excitations of exciton-polariton Bose-Einstein condensates (BECs) in semiconductor microcavities. For a typical two dimensional (2D) BEC we focus on two limiting cases, the weak- and strong-coupling regimes, where a perturbation theory and the Thomas-Fermi approximation, respectively, are valid. We calculate integrated scattering intensity spectra for probing the collective excitations of the condensate in both considered limits. Moreover, in relation to recent experiments on optical modulation allowing localization of condensates in a trap with well controlled shape and dimensions, we study the quasi-one dimensional (1D) motion of the BEC in microwires and report the corresponding Bogolyubov's excitation spectrum. We show that in 1D case the characteristic polariton-polariton interaction constant is expressed as $g_{1}=3λ\mathcal{N}/(2L_{y})$ ($λ$ is the 2D polariton-polaritons interaction parameter in the cavity, $\mathcal{N}$ the number of the particles, and $L_{y}$ the wirecavity width). We reveal some interesting features for 2D and 1D Bogolyubov spectra for both repulsive $(λ>0)$ and attractive $(λ<0)$ interaction.
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Submitted 25 March, 2014;
originally announced March 2014.
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Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures
Authors:
Ya. V. Terent'ev,
S. N. Danilov,
J. Loher,
D. Schuh,
D. Bougeard,
D. Weiss,
M. V. Durnev,
S. A. Tarasenko,
M. S. Mukhin,
S. V. Ivanov,
S. D. Ganichev
Abstract:
Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by…
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Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the radiative recombination in these QW. The sign of the circular polarization indicates that it stems from the spin polarization of heavy holes caused by the Zeeman effect. Although in magnetic field the PL line are strongly circularly polarized, no energy shift between the counter-polarized PL lines was observed. The results suggest that the electron and the hole g-factor to be of the same sign and close magnitudes.
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Submitted 30 January, 2014; v1 submitted 29 January, 2014;
originally announced January 2014.
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Zeeman splitting of light hole in quantum wells: comparison of theory and experiments
Authors:
M. V. Durnev
Abstract:
The theory for light-hole Zeeman splitting developed in [Physica E 44, 797 (2012)] is compared with experimental data found in literature for GaAs/AlGaAs, InGaAs/InP and CdTe/CdMgTe quantum wells. It is shown that the description of experiments is possible with account for excitonic effects and peculiarities of the hole energy spectrum in a quantum well including complex structure of the valence b…
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The theory for light-hole Zeeman splitting developed in [Physica E 44, 797 (2012)] is compared with experimental data found in literature for GaAs/AlGaAs, InGaAs/InP and CdTe/CdMgTe quantum wells. It is shown that the description of experiments is possible with account for excitonic effects and peculiarities of the hole energy spectrum in a quantum well including complex structure of the valence band and the interface mixing of light and heavy holes. It is demonstrated that the absolute values and the sign of the light-hole $g$-factor are extremely sensitive to the parametrization of the Luttinger Hamiltonian.
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Submitted 6 December, 2013;
originally announced December 2013.
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Spin-orbit splitting of valence subbands in semiconductor nanostructures
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko
Abstract:
We propose the 14-band $\mathbf k \cdot \mathbf p$ model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the $Γ_{15}$ conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effec…
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We propose the 14-band $\mathbf k \cdot \mathbf p$ model to calculate spin-orbit splittings of the valence subbands in semiconductor quantum wells. The reduced symmetry of quantum well interfaces is incorporated by means of additional terms in the boundary conditions which mix the $Γ_{15}$ conduction and valence Bloch functions at the interfaces. It is demonstrated that the interface-induced effect makes the dominating contribution to the heavy-hole spin splitting. A simple analytical expression for the interface contribution is derived. In contrast to the 4$\times$4 effective Hamiltonian model, where the problem of treating the $V_z k_z^3$ term seems to be unsolvable, the 14-band model naturally avoids and overcomes this problem. Our results are in agreement with the recent atomistic calculations [J.-W. Luo et al., Phys. Rev. Lett. {\bf 104}, 066405 (2010)].
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Submitted 22 November, 2013;
originally announced November 2013.
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Phase diagrams of magnetopolariton gases
Authors:
V. P. Kochereshko,
M. V. Durnev,
L. Besombes,
H. Mariette,
V. F. Sapega,
A. Axitopoulos,
I. G. Savenko,
T. C. H. Liew,
I. A. Shelykh,
A. V. Platonov,
S. I. Tsintzos,
Z. Hatzopoulos,
P. Lagoudakis,
P. G. Savvidis,
C. Schneider,
M. Amthor,
C. Metzger,
M. Kamp,
S. Hoefling,
A. Kavokin
Abstract:
The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focu…
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The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focused on studies of polariton lasers, where non-equilibrium Bose-Einstein condensates of bosonic quasiparticles, exciton-polaritons, may appear or disappear under an effect of applied magnetic fields. Polariton lasers based on pillar or planar microcavities were excited both optically and electrically. In all cases a pronounced dependence of the onset to lasing on the magnetic field has been observed. For the sake of comparison, photon lasing (lasing by an electron-hole plasma) in the presence of a magnetic field has been studied on the same samples as polariton lasing. The threshold to photon lasing is essentially governed by the excitonic Mott transition which appears to be sensitive to magnetic fields too. All the observed experimental features are qualitatively described within a uniform model based on coupled diffusion equations for electrons, holes and excitons and the Gross-Pitaevskii equation for exciton-polariton condensates. Our research sheds more light on the physics of non-equilibrium Bose-Einstein condensates and the results manifest high potentiality of polariton lasers for spin-based quantum logic applications.
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Submitted 26 September, 2013;
originally announced September 2013.
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Magnetic field induced valence band mixing in [111] grown semiconductor quantum dots
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko,
M. Jo,
T. Mano,
T. Kuroda,
K. Sakoda,
S. Kunz,
G. Sallen,
L. Bouet,
X. Marie,
D. Lagarde,
T. Amand,
B. Urbaszek
Abstract:
We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowa…
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We present a microscopic theory of the magnetic field induced mixing of heavy-hole states +/- 3/2 in GaAs droplet dots grown on (111)A substrates. The proposed theoretical model takes into account the striking dot shape with trigonal symmetry revealed in atomic force microscopy. Our calculations of the hole states are carried out within the Luttinger Hamiltonian formalism, supplemented with allowance for the triangularity of the confining potential. They are in quantitative agreement with the experimentally observed polarization selection rules, emission line intensities and energy splittings in both longitudinal and transverse magnetic fields for neutral and charged excitons in all measured single dots.
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Submitted 29 November, 2012;
originally announced November 2012.
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Exciton radiative decay through plasmon modes in planar metal-semiconductor structures
Authors:
M. V. Durnev,
A. V. Kavokin,
B. Gil
Abstract:
We develop a non-local dielectric response theory to describe the temperature dependence of exciton lifetime in metal-semiconductor heterostructures. Coupling between excitons and surface plasmons results in a strongly nonmonotonous behaviour of exciton radiative decay rate versus temperature. Tuning the plasmon frequency one can control the efficiency of exciton emission of light.
We develop a non-local dielectric response theory to describe the temperature dependence of exciton lifetime in metal-semiconductor heterostructures. Coupling between excitons and surface plasmons results in a strongly nonmonotonous behaviour of exciton radiative decay rate versus temperature. Tuning the plasmon frequency one can control the efficiency of exciton emission of light.
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Submitted 15 September, 2012;
originally announced September 2012.
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Giant Zeeman splitting of light holes in GaAs/AlGaAs quantum wells
Authors:
M. V. Durnev,
M. M. Glazov,
E. L. Ivchenko
Abstract:
We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole…
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We have developed a theory of the longitudinal $g$ factor of light holes in semiconductor quantum wells. It is shown that the absolute value of the light-hole $g$-factor can strongly exceed its value in the bulk and, moreover, the dependence of the Zeeman splitting on magnetic field becomes non-linear in relatively low fields. These effects are determined by the proximity of the ground light-hole subband, $lh1$, to the first excited heavy-hole subband, $hh2$, in GaAs/AlGaAs-type structures. The particular calculations are performed in the framework of Luttinger Hamiltonian taking into account both the magnetic field-induced mixing of $lh1$ and $hh2$ states and the mixing of these states at heterointerfaces, the latter caused by chemical bonds anisotropy. A theory of magneto-induced reflection and transmission of light through the quantum wells for the light-hole-to-electron absorption edge is also presented.
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Submitted 29 November, 2011;
originally announced November 2011.
