Raman study of lattice vibrations in type II superlattice InAs/InAs1-xSbx
Authors:
Henan Liu,
Yong Zhang,
Elizabeth H. Steenbergen,
Shi Liu,
Zhiyuan Lin,
Yong-Hang Zhang,
Jeomoh Kim,
Mi-Hee Ji,
Theeradetch Detchprohm,
Russell D. Dupuis,
** K. Kim,
Samuel D. Hawkins,
John F. Klem
Abstract:
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
In this work, we report a polarized Raman study on the vibrational properties of the InAs/InAs1-xSbx SLs as well as selected InAs1-xSbx alloys, all grown on GaSb substrates by either MBE or MOCVD, from both growth surface and cleaved edge.
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Submitted 16 April, 2017;
originally announced April 2017.
Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy
Authors:
Wei Yi,
Hong Lu,
Yong Huang,
Michael A. Scarpulla,
Jae-Hyun Ryou,
Arthur C. Gossard,
Russell D. Dupuis,
Venkatesh Narayanamurti
Abstract:
Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The band…
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Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinuities at semiconductor heterojunctions without any prerequisite material parameter. Measurements are performed on lattice-matched GaAs/AlxGa1-xAs and GaAs/(AlxGa1-x)0.51In0.49P single-barrier heterostructures. The bandgaps of AlGaAs and AlGaInP are measured with a resolution of several meV at 4.2 K. For the GaAs/AlGaAs interface, the measured Gamma band offset ratio is 60.4:39.6 (+/-2%). For the GaAs/AlGaInP interface, this ratio varies with the Al mole fraction and is distributed more in the valence band. A non-monotonic Al composition dependence of the conduction band offset at the GaAs/AlGaInP interface is observed in the indirect-gap regime.
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Submitted 15 April, 2009;
originally announced April 2009.
