Unified mechanism of the surface Fermi level pinning in III-As nanowires
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
G. E. Cirlin,
R. R. Reznik,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level.…
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Fermi level pinning at the oxidized (110) surfaces of III-As nanowires (GaAs, InAs, InGaAs, AlGaAs) is studied. Using scanning gradient Kelvin probe microscopy, we show that the Fermi level at oxidized cleavage surfaces of ternary Al$_{x}$Ga$_{1-x}$As (0$\le$x$\le$0.45) and Ga$_{x}$In$_{1-x}$As (0$\le$x$\le$1) alloys is pinned at the same position of 4.8$\pm$0.1 eV with regard to the vacuum level. The finding implies a unified mechanism of the Fermi level pinning for such surfaces. Further investigation, performed by Raman scattering and photoluminescence spectroscopy, shows that photooxidation of the Al$_{x}$Ga$_{1-x}$As and Ga$_{x}$In$_{1-x}$As nanowires leads to the accumulation of an excess arsenic on their crystal surfaces which is accompanied by a strong decrease of the band-edge photoluminescence intensity. We conclude that the surface excess arsenic in crystalline or amorphous forms is responsible for the Fermi level pinning at oxidized (110) surfaces of III-As nanowires.
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Submitted 17 November, 2017; v1 submitted 17 October, 2017;
originally announced October 2017.
Observing visible-range photoluminescence in GaAs nanowires modified by laser irradiation
Authors:
P. A. Alekseev,
M. S. Dunaevskiy,
D. A. Kirilenko,
A. N. Smirnov,
V. Yu. Davydov,
V. L. Berkovits
Abstract:
We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under…
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We study structural and chemical transformations induced by focused laser beam in GaAs nanowires with axial zinc-blende/wurtzite (ZB/WZ) heterostucture. The experiments are performed using a combination of transmission electron microscopy, energy-dispersive X-ray spectroscopy, Raman scattering, and photoluminescence spectroscopy. For the both components of heterostructure, laser irradiation under atmospheric air is found to produce a double surface layer which is composed of crystalline arsenic and of amorphous GaO$_{x}$. The latter compound is responsible for appearance of a peak at 1.76 eV in photoluminescence spectra of GaAs nanowires. Under increased laser power density, due to sample heating, evaporation of the surface crystalline arsenic and formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals proceed on surface of the zinc-blende part of nanowire. The formed nanocrystals reveal a photoluminescence band in visible range of 1.7-2.4 eV. At the same power density for wurtzite part of the nanowire, total amorphization with formation of $β$-Ga$_{2}$O$_{3}$ nanocrystals occurs. Observed transformation of WZ-GaAs to $β$-Ga$_{2}$O$_{3}$ nanocrystals presents an available way for creation of axial and radial heterostuctures ZB-GaAs/$β$-Ga$_{2}$O$_{3}$ for optoelectronic and photonic applications.
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Submitted 17 January, 2017;
originally announced January 2017.
