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Tailoring the topological surface state in ultrathin $α$-Sn (111) films
Authors:
Victor A. Rogalev,
Felix Reis,
Florian Adler,
Maximilian Bauernfeind,
Jonas Erhardt,
André Kowalewski,
Markus R. Scholz,
Lenart Dudy,
Liam B. Duffy,
Thorsten Hesjedal,
Moritz Hoesch,
Gustav Bihlmayer,
Jörg Schäfer,
Ralph Claessen
Abstract:
We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV be…
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We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.
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Submitted 6 December, 2019; v1 submitted 24 October, 2019;
originally announced October 2019.
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Microscopic effects of Dy-do** in the topological insulator Bi2Te3
Authors:
L. B. Duffy,
N. -J. Steinke,
J. A. Krieger,
A. I. Figueroa,
K. Kummer,
T. Lancaster,
S. R. Giblin,
F. L. Pratt,
S. J. Blundell,
T. Prokscha,
A. Suter,
S. Langridge,
V. N. Strocov,
Z. Salman,
G. van der Laan,
T. Hesjedal
Abstract:
Magnetic do** with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the do** of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. Ho…
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Magnetic do** with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the do** of Bi2Te3 thin films with rare earth ions, which, owing to their large magnetic moments, promise commensurately large magnetic gap openings in the topological surface states. However, only when do** with Dy has a sizable gap been observed in angle-resolved photoemission spectroscopy, which persists up to room-temperature. Although disorder alone could be ruled out as a cause of the topological phase transition, a fundamental understanding of the magnetic and electronic properties of Dy:Bi2Te3 remained elusive. Here, we present an X-ray magnetic circular dichroism, polarized neutron reflectometry, muon spin rotation, and resonant photoemission study of the microscopic magnetic and electronic properties. We find that the films are not simply paramagnetic but that instead the observed behavior can be well explained by the assumption of slowly fluctuating, inhomogeneous magnetic patches with increasing volume fraction as the temperature decreases. At liquid helium temperatures, a large effective magnetization can be easily introduced by the application of moderate magnetic fields, implying that this material is very suitable for proximity coupling to an underlying ferromagnetic insulator or in a heterostructure with transition metal-doped layers. However, the introduction of some charge carriers by the dopants cannot be excluded at least in these highly doped samples. Nevertheless, we find that the magnetic order is not mediated via the conduction channel in these rare earth doped samples and therefore magnetic order and carrier concentration are expected to be independently controllable. This is not generally the case for transition metal doped topological insulators.
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Submitted 6 August, 2018;
originally announced August 2018.
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The topological surface state of $α$-Sn on InSb(001) as studied by photoemission
Authors:
M. R. Scholz,
V. A. Rogalev,
L. Dudy,
F. Reis,
F. Adler,
J. Aulbach,
L. J. Collins-McIntyre,
L. B. Duffy,
H. F. Yang,
Y. L. Chen,
T. Hesjedal,
Z. K. Liu,
M. Hoesch,
S. Muff,
J. H. Dil,
J. Schäfer,
R. Claessen
Abstract:
We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by…
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We report on the electronic structure of the elemental topological semimetal $α$-Sn on InSb(001). High-resolution angle-resolved photoemission data allow to observe the topological surface state (TSS) that is degenerate with the bulk band structure and show that the former is unaffected by different surface reconstructions. An unintentional $p$-type do** of the as-grown films was compensated by deposition of potassium or tellurium after the growth, thereby shifting the Dirac point of the surface state below the Fermi level. We show that, while having the potential to break time-reversal symmetry, iron impurities with a coverage of up to 0.25 monolayers do not have any further impact on the surface state beyond that of K or Te. Furthermore, we have measured the spin-momentum locking of electrons from the TSS by means of spin-resolved photoemission. Our results show that the spin vector lies fully in-plane, but it also has a finite radial component. Finally, we analyze the decay of photoholes introduced in the photoemission process, and by this gain insight into the many-body interactions in the system. Surprisingly, we extract quasiparticle lifetimes comparable to other topological materials where the TSS is located within a bulk band gap. We argue that the main decay of photoholes is caused by intraband scattering, while scattering into bulk states is suppressed due to different orbital symmetries of bulk and surface states.
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Submitted 29 November, 2017;
originally announced November 2017.
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Emergence of Dirac-like bands in the monolayer limit of epitaxial Ge films on Au(111)
Authors:
Niels B. M. Schröter,
Matthew D. Watson,
Liam B. Duffy,
Moritz Hoesch,
Yulin Chen,
Thorsten Hesjedal,
Timur K. Kim
Abstract:
After the discovery of Dirac fermions in graphene, it has become a natural question to ask whether it is possible to realize Dirac fermions in other two-dimensional (2D) materials as well. In this work, we report the discovery of multiple Dirac-like electronic bands in ultrathin Ge films grown on Au(111) by angle-resolved photoelectron spectroscopy. By tuning the thickness of the films, we are abl…
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After the discovery of Dirac fermions in graphene, it has become a natural question to ask whether it is possible to realize Dirac fermions in other two-dimensional (2D) materials as well. In this work, we report the discovery of multiple Dirac-like electronic bands in ultrathin Ge films grown on Au(111) by angle-resolved photoelectron spectroscopy. By tuning the thickness of the films, we are able to observe the evolution of their electronic structure when passing through the monolayer limit. Our discovery may signify the synthesis of germanene, a 2D honeycomb structure made of Ge, which is a promising platform for exploring exotic topological phenomena and enabling potential applications.
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Submitted 14 July, 2017;
originally announced July 2017.
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Ultrahigh magnetic field spectroscopy reveals the band structure of the 3D topological insulator Bi$_2$Se$_3$
Authors:
A. Miyata,
Z. Yang,
A. Surrente,
O. Drachenko,
D. K. Maude,
O. Portugall,
L. B. Duffy,
T. Hesjedal,
P. Plochocka,
R. J. Nicholas
Abstract:
We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear.…
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We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear. At even higher energies around 0.99 and 1.6 eV, new additional strong absorptions are observed with a temperature and magnetic-field dependence which suggest that they originate from higher band gaps. Spin orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV.
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Submitted 2 June, 2017;
originally announced June 2017.
